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Xie J, Shan X, Zou N, Lin Y, Wang Z, Tao Y, Zhao X, Xu H, Liu Y. All-Optically Controlled Memristive Device Based on Cu 2O/TiO 2 Heterostructure Toward Neuromorphic Visual System. RESEARCH (WASHINGTON, D.C.) 2025; 8:0580. [PMID: 39801505 PMCID: PMC11717997 DOI: 10.34133/research.0580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2024] [Revised: 12/14/2024] [Accepted: 12/21/2024] [Indexed: 01/16/2025]
Abstract
The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as the leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation and complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient image perception. As a p-type oxide material, Cu2O exhibits outstanding theoretical photoelectric conversion efficiency and broadband photoresponse. In this work, an all-optically controlled memristor based on the Cu2O/TiO2/sodium alginate nanocomposite film is developed. Optical potentiation and depression behaviors have been implemented by utilizing visible (680 nm) and ultraviolet (350 nm) light. Furthermore, a 7 × 9 optoelectronic memristive array with satisfactory device variation and environment stability is constructed to emulate the image preprocessing function in biological retina. The random noise can be reduced effectively by utilizing bidirectional optical input. Beneficial from the image preprocessing function, the accuracy of handwritten digit classification increases more than 60%. Our work presents a pathway toward high-efficient neuromorphic visual system and promotes the development of artificial intelligence technology.
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Affiliation(s)
- Jun Xie
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Xuanyu Shan
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Ningbo Zou
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
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Qin K, Huang X, Wang S, Liang J, Fan Z. 3D-Printed In Situ Growth of Bilayer MOF Hydrogels for Accelerated Osteochondral Defect Repair. Adv Healthc Mater 2025; 14:e2403840. [PMID: 39552270 DOI: 10.1002/adhm.202403840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2024] [Revised: 11/05/2024] [Indexed: 11/19/2024]
Abstract
Repairing osteochondral (OC) defect presents a significant challenge due to the intricate structural requirements and the unpredictable differentiation pathways of bone marrow mesenchymal stem cells (BMSCs). To address this challenge, a novel biomimetic OC hydrogel scaffold is developed that features a structure of soft and hard components. This scaffold incorporates bilayer metal-organic frameworks (MOFs), specifically ZIF-67 in the upper layer and ZIF-8 in the lower layer, achieved through an in situ printing process. This configuration enables the spatial and temporal modulation of BMSC differentiation by controlling the release of Co2⁺ and Zn2⁺. The results demonstrate that the bilayer MOF hydrogels significantly outperform hydrogels that either lack MOFs or contain a single type of MOF in enhancing repair outcomes in rabbit models of knee OC defects. The improved regenerative efficacy is attributed to the distinct chondrogenic and osteogenic differentiation cues provided by the bilayer MOFs, effectively guiding BMSCs toward enhanced tissue regeneration. This customizable biomimetic OC hydrogel scaffold not only opens new avenues for innovative therapeutic strategies but also holds great promise for widespread clinical applications.
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Affiliation(s)
- Kaiqi Qin
- Key Laboratory of Dental Maxillofacial Reconstruction and Biological Intelligence Manufacturing, School of Stomatology, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China
| | - Xinyue Huang
- Key Laboratory of Dental Maxillofacial Reconstruction and Biological Intelligence Manufacturing, School of Stomatology, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China
| | - Shengfeng Wang
- Key Laboratory of Dental Maxillofacial Reconstruction and Biological Intelligence Manufacturing, School of Stomatology, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China
| | - Jiachen Liang
- Key Laboratory of Dental Maxillofacial Reconstruction and Biological Intelligence Manufacturing, School of Stomatology, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China
| | - Zengjie Fan
- Key Laboratory of Dental Maxillofacial Reconstruction and Biological Intelligence Manufacturing, School of Stomatology, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China
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Gou K, Li Y, Song H, Lu R, Jiang J. Optimization strategy of the emerging memristors: From material preparation to device applications. iScience 2024; 27:111327. [PMID: 39640570 PMCID: PMC11617400 DOI: 10.1016/j.isci.2024.111327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2024] Open
Abstract
With the advent of the post-Moore era and the era of big data, advanced data storage and processing technology are in urgent demand to break the von Neumann bottleneck. Neuromorphic computing, which mimics the computational paradigms of the human brain, offers an efficient and energy-saving way to process large datasets in parallel. Memristor is an ideal architectural unit for constructing neuromorphic computing. It offers several advantages, including a simple structure, low power consumption, non-volatility, and easy large-scale integration. The hardware-based neural network using a large-scale cross array of memristors is considered to be a potential scheme for realizing the next-generation neuromorphic computing. The performance of these devices is a key to constructing the expansive memristor arrays. Herein, this paper provides a comprehensive review of current strategies for enhancing the performance of memristors, focusing on the electronic materials and device structures. Firstly, it examines current device fabrication techniques. Subsequently, it deeply analyzes methods to improve both the performance of individual memristor and the overall performance of device array from a material and structural perspectives. Finally, it summarizes the applications and prospects of memristors in neuromorphic computing and multimodal sensing. It aims at providing an insightful guide for developing the brain-like high computer chip.
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Affiliation(s)
- Kaiyun Gou
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, China
- School of Electronic Information, Central South University, Changsha, Hunan 410083, China
| | - Yanran Li
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China
| | - Honglin Song
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China
| | - Rong Lu
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, China
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Yang B, Qian W, Zhang L. Processing Solid Hydrogels into Hollow Structures by Infrared Laser Light for Highly-Efficient Drug Loading and Controlled Release. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:22736-22743. [PMID: 39425675 DOI: 10.1021/acs.langmuir.4c02683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2024]
Abstract
Hollow hydrogels, characterized by their three-dimensional networks akin to biological tissues, are extensively utilized in artificial blood vessels, drug delivery, and nerve conduits due to their superior biocompatibility and fluid-transportation capacity. Nonetheless, the fabrication of hollow hydrogels presents significant challenges, including intricate steps, costly equipment, and structural instability. Consequently, refining the preparation techniques for hollow hydrogels remains paramount to surmounting the limitations of conventional methods. This research introduces an innovative approach that markedly diverges from traditional techniques, offering notable convenience and efficiency in the creation of hollow hydrogel structures. The central novelty of this method lies in employing laser light to induce an in situ photothermal effect, leading to the formation of hollow configurations. This laser-driven transformation of solid hydrogels into hollow structures addresses numerous shortcomings associated with traditional methods. For instance, conventional chemical approaches often necessitate several days to yield hollow hydrogels, and the resultant structures tend to be fragile and susceptible to damage under external pressure. In contrast, the laser-assisted technique facilitates the formation of hollow structures within 240 s, significantly outpacing traditional methods. To achieve controlled drug release, silk fibroin was integrated into the wall of the hollow hydrogels, enabling modulation of wall permeability and directing the drug release process.
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Affiliation(s)
- Bingbing Yang
- School of Chemistry and Molecular Engineering, East China Normal University, Shanghai 200241, People's Republic of China
| | - Wei Qian
- Anhui Province Key Laboratory of Specialty Polymers, Anhui University of Science & Technology, Huainan 232001, People's Republic of China
| | - Lidong Zhang
- School of Chemistry and Molecular Engineering, East China Normal University, Shanghai 200241, People's Republic of China
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Tsao SC, Chang KH, Fu Y, Tai HH, Lin TH, Wu MC, Wang JC. Heterogeneous Integration of Memristive and Piezoresistive MDMO-PPV-Based Copolymers in Nociceptive Transmission with Fast and Slow Pain for an Artificial Pain-Perceptual System. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311040. [PMID: 38864224 DOI: 10.1002/smll.202311040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Revised: 06/04/2024] [Indexed: 06/13/2024]
Abstract
Nociceptive pain perception is a remarkable capability of organisms to be aware of environmental changes and avoid injury, which can be accomplished by specialized pain receptors known as nociceptors with 4 vital properties including threshold, no adaptation, relaxation, and sensitization. Bioinspired systems designed using artificial devices are investigated to imitate the efficacy and functionality of nociceptive transmission. Here, an artificial pain-perceptual system (APPS) with a homogeneous material and heterogeneous integration is proposed to emulate the behavior of fast and slow pain in nociceptive transmission. Retention-differentiated poly[2-methoxy-5-(3,7-dimethyoctyoxyl)-1,4-phenylenevinylene] (MDMO-PPV) memristors with film thicknesses of 160 and 80 nm are manufactured and adopted as A-δ and C nerve fibers of nociceptor conduits, respectively. Additionally, a nociceptor mimic, the ruthenium nanoparticles (Ru-NPs)-doped MDMO-PPV piezoresistive pressure sensor, is fabricated with a noxiously stimulated threshold of 150 kPa. Under the application of pricking and dull noxious stimuli, the current flows predominantly through the memristor to mimic the behavior of fast and slow pain, respectively, in nociceptive transmission with postsynaptic potentiation properties, which is analogous to biological pain perception. The proposed APPS can provide potential advancements in establishing the nervous system, thus enabling the successful development of next-generation neurorobotics, neuroprosthetics, and precision medicine.
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Affiliation(s)
- Shih-Cheng Tsao
- Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan, 33302, Taiwan
| | - Kuo-Hsuan Chang
- Department of Neurology, Chang Gung Memorial Hospital, Linkou, Guishan Dist., Taoyuan, 33305, Taiwan
- College of Medicine, Chang Gung University, Guishan Dist., Taoyuan, 33302, Taiwan
| | - Yi Fu
- Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan, 33302, Taiwan
| | - Han-Hsiang Tai
- Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan, 33302, Taiwan
| | - Ting-Han Lin
- Department of Chemical and Materials Engineering, Chang Gung University, Guishan Dist., Taoyuan, 33302, Taiwan
| | - Ming-Chung Wu
- Department of Chemical and Materials Engineering, Chang Gung University, Guishan Dist., Taoyuan, 33302, Taiwan
- Center for Sustainability and Energy Technologies, Chang Gung University, Guishan Dist., Taoyuan, 33302, Taiwan
- Division of Neonatology, Department of Pediatrics, Chang Gung Memorial Hospital, Linkou, Guishan Dist., Taoyuan, 33305, Taiwan
| | - Jer-Chyi Wang
- Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan, 33302, Taiwan
- Department of Neurosurgery, Chang Gung Memorial Hospital, Linkou, Guishan Dist., Taoyuan, 33305, Taiwan
- Department of Electronic Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City, 243303, Taiwan
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Yan J, Armstrong JPK, Scarpa F, Perriman AW. Hydrogel-Based Artificial Synapses for Sustainable Neuromorphic Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403937. [PMID: 39087845 DOI: 10.1002/adma.202403937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Revised: 06/16/2024] [Indexed: 08/02/2024]
Abstract
Hydrogels find widespread applications in biomedicine because of their outstanding biocompatibility, biodegradability, and tunable material properties. Hydrogels can be chemically functionalized or reinforced to respond to physical or chemical stimulation, which opens up new possibilities in the emerging field of intelligent bioelectronics. Here, the state-of-the-art in functional hydrogel-based transistors and memristors is reviewed as potential artificial synapses. Within these systems, hydrogels can serve as semisolid dielectric electrolytes in transistors and as switching layers in memristors. These synaptic devices with volatile and non-volatile resistive switching show good adaptability to external stimuli for short-term and long-term synaptic memory effects, some of which are integrated into synaptic arrays as artificial neurons; although, there are discrepancies in switching performance and efficacy. By comparing different hydrogels and their respective properties, an outlook is provided on a new range of biocompatible, environment-friendly, and sustainable neuromorphic hardware. How potential energy-efficient information storage and processing can be achieved using artificial neural networks with brain-inspired architecture for neuromorphic computing is described. The development of hydrogel-based artificial synapses can significantly impact the fields of neuromorphic bionics, biometrics, and biosensing.
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Affiliation(s)
- Jiongyi Yan
- School of Cellular and Molecular Medicine, University of Bristol, Bristol, BS8 1TD, UK
| | - James P K Armstrong
- Department of Translational Health Sciences, Bristol Medical School, University of Bristol, Bristol, BS1 3NY, UK
| | - Fabrizio Scarpa
- Bristol Composites Institute, School of Civil, Aerospace and Design Engineering (CADE), University of Bristol, University Walk, Bristol, BS8 1TR, UK
| | - Adam W Perriman
- School of Cellular and Molecular Medicine, University of Bristol, Bristol, BS8 1TD, UK
- Research School of Chemistry, Australian National University, Canberra, Australian Capital Territory, 2601, Australia
- John Curtin School of Medical Research, Australian National University, Canberra, Australian Capital Territory, 2601, Australia
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Li Y, He G, Wang W, Fu C, Jiang S, Fortunato E, Martins R. A high-performance organic lithium salt-doped OFET with the optical radical effect for photoelectric pulse synaptic simulation and neuromorphic memory learning. MATERIALS HORIZONS 2024; 11:3867-3877. [PMID: 38787754 DOI: 10.1039/d4mh00297k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2024]
Abstract
Simulation of synaptic characteristics is essential for the application of organic field effect transistors (OFETs) in neural morphology. Although excellent performance, including bias stability and mobility, as well as photoelectric pulse synaptic simulation, has been achieved in SiO2-gated OFETs with PDVT-10 as an organic channel, there are relatively few studies on photoelectric pulse synaptic simulation of electrolyte-gated OFETs based on environmentally friendly and low-voltage operation. Herein, synaptic transistors based on organic semiconductors are reported to simulate the photoelectric pulse response by developing solution-based organic semiconductor PDVT-10, and polyvinyl alcohol (PVA) with an electric double layer (EDL) effect to act as a channel and gate dielectric layer, respectively, and organic lithium salt-doped PVA is used to enhance the EDL effect. The presence of electrical pulses in doped devices not only achieves basic electrical synaptic characteristics, but also significantly realizes the long-term characteristics, pain perception, memory and sensitization applications. Furthermore, the introduction of photoinitiator molecules into the channel layer leads to improved photosynaptic performances by using light-induced free radicals, and the photoelectric synergistic effect has been actualized by introducing heterojunction architecture. This work provides promising prospects for achieving photoelectric pulse modulation based on organic synaptic devices, which shows great potential for the development of artificial intelligence.
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Affiliation(s)
- Yujiao Li
- Field Effect Device & Flexible Display Lab, School of Materials Science and Engineering, Anhui University, Hefei 230601, P. R. China.
| | - Gang He
- Field Effect Device & Flexible Display Lab, School of Materials Science and Engineering, Anhui University, Hefei 230601, P. R. China.
| | - Wenhao Wang
- Field Effect Device & Flexible Display Lab, School of Materials Science and Engineering, Anhui University, Hefei 230601, P. R. China.
| | - Can Fu
- Field Effect Device & Flexible Display Lab, School of Materials Science and Engineering, Anhui University, Hefei 230601, P. R. China.
| | - Shanshan Jiang
- School of Integrated Circuits, Anhui University, Hefei 230601, P. R. China
| | - Elvira Fortunato
- Department of Materials Science/CENIMAT-I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparica, Portugal
| | - Rodrigo Martins
- Department of Materials Science/CENIMAT-I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparica, Portugal
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8
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Merces L, Ferro LMM, Nawaz A, Sonar P. Advanced Neuromorphic Applications Enabled by Synaptic Ion-Gating Vertical Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305611. [PMID: 38757653 PMCID: PMC11251569 DOI: 10.1002/advs.202305611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 12/07/2023] [Indexed: 05/18/2024]
Abstract
Bioinspired synaptic devices have shown great potential in artificial intelligence and neuromorphic electronics. Low energy consumption, multi-modal sensing and recording, and multifunctional integration are critical aspects limiting their applications. Recently, a new synaptic device architecture, the ion-gating vertical transistor (IGVT), has been successfully realized and timely applied to perform brain-like perception, such as artificial vision, touch, taste, and hearing. In this short time, IGVTs have already achieved faster data processing speeds and more promising memory capabilities than many conventional neuromorphic devices, even while operating at lower voltages and consuming less power. This work focuses on the cutting-edge progress of IGVT technology, from outstanding fabrication strategies to the design and realization of low-voltage multi-sensing IGVTs for artificial-synapse applications. The fundamental concepts of artificial synaptic IGVTs, such as signal processing, transduction, plasticity, and multi-stimulus perception are discussed comprehensively. The contribution draws special attention to the development and optimization of multi-modal flexible sensor technologies and presents a roadmap for future high-end theoretical and experimental advancements in neuromorphic research that are mostly achievable by the synaptic IGVTs.
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Affiliation(s)
- Leandro Merces
- Research Center for MaterialsArchitectures, and Integration of Nanomembranes (MAIN)Chemnitz University of Technology09126ChemnitzGermany
| | - Letícia Mariê Minatogau Ferro
- Research Center for MaterialsArchitectures, and Integration of Nanomembranes (MAIN)Chemnitz University of Technology09126ChemnitzGermany
| | - Ali Nawaz
- Center for Sensors and DevicesBruno Kessler Foundation (FBK)Trento38123Italy
| | - Prashant Sonar
- School of Chemistry and PhysicsQueensland University of Technology (QUT)BrisbaneQLD4000Australia
- Centre for Materials ScienceQueensland University of Technology2 George StreetBrisbaneQLD4000Australia
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9
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Qi M, Xu R, Ding G, Zhou K, Zhu S, Leng Y, Sun T, Zhou Y, Han ST. An in-sensor humidity computing system for contactless human-computer interaction. MATERIALS HORIZONS 2024; 11:939-948. [PMID: 38078356 DOI: 10.1039/d3mh01734f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Being capable of processing large amounts of redundant data and decreasing power consumption, in-sensor computing approaches play significant roles in neuromorphic computing and are attracting increasing interest in perceptual information processing. Herein, we proposed a high performance humidity-sensitive memristor based on a Ti/graphene oxide (GO)/HfOx/Pt structure and verified its potential for application in remote health management and contactless human-machine interfaces. Since GO possesses abundant hydrophilic groups (carbonyl, epoxide, and hydroxyl), the memristor shows a high humidity sensitivity, fast response, and wide response range. By utilizing the proton-modulated redox reaction, humidity exposure to the memristor induces a dynamic change in the switching between high and low resistance states, ensuring essential synaptic learning functions, such as paired-pulse facilitation, spike number-dependent plasticity, and spike amplitude-dependent plasticity. More importantly, based on the humidity-induced salient features originating from the abundant hydrophilic functional groups in GO, we have implemented a noncontact human-machine interface utilizing the respiratory mode in humans, demonstrating the potential of promoting health monitoring applications and effectively blocking virus transmission. In addition, the high recognition accuracy of contactless handwriting in a 5 × 5 array artificial neural network was successfully achieved, which is attributed to the excellent emulated synaptic behaviors. This study provides a feasible method to develop an excellent humidity-sensitive memristor for constructing efficient in-sensor computing for application in health management and contactless human-computer interaction.
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Affiliation(s)
- Meng Qi
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Runze Xu
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shirui Zhu
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yanbing Leng
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Tao Sun
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong, China.
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10
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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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Zhang H, Qiu P, Lu Y, Ju X, Chi D, Yew KS, Zhu M, Wang S, Wei R, Hu W. In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfO x-Based Neuristor Array. ACS Sens 2023; 8:3873-3881. [PMID: 37707324 DOI: 10.1021/acssensors.3c01418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
With the evolution of artificial intelligence, the explosive growth of data from sensory terminals gives rise to severe energy-efficiency bottleneck issues due to cumbersome data interactions among sensory, memory, and computing modules. Heterogeneous integration methods such as chiplet technology can significantly reduce unnecessary data movement; however, they fail to address the fundamental issue of the substantial time and energy overheads resulting from the physical separation of computing and sensory components. Brain-inspired in-sensor neuromorphic computing (ISNC) has plenty of room for such data-intensive applications. However, one key obstacle in developing ISNC systems is the lack of compatibility between material systems and manufacturing processes deployed in sensors and computing units. This study successfully addresses this challenge by implementing fully CMOS-compatible TiN/HfOx-based neuristor array. The developed ISNC system demonstrates several advantageous features, including multilevel analogue modulation, minimal dispersion, and no significant degradation in conductance (@125 °C). These characteristics enable stable and reproducible neuromorphic computing. Additionally, the device exhibits modulatable sensory and multi-store memory processes. Furthermore, the system achieves information recognition with a high accuracy rate of 93%, along with frequency selectivity and notable activity-dependent plasticity. This work provides a promising route to affordable and highly efficient sensory neuromorphic systems.
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Affiliation(s)
- Haizhong Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
- FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University, Jinjiang 362200, China
| | - Peng Qiu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
| | - Yaoping Lu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
| | - Xin Ju
- Institute of Materials Research and Engineering, 2 Fusionopolis Way, Innovis, #08-03, Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, 2 Fusionopolis Way, Innovis, #08-03, Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Kwang Sing Yew
- Global Foundries, 60 Woodlands Industrial Park D Street 2, Singapore 738406, Singapore
| | - Minmin Zhu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
- FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University, Jinjiang 362200, China
| | - Shaohao Wang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
- FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University, Jinjiang 362200, China
| | - Rongshan Wei
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
- FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University, Jinjiang 362200, China
| | - Wei Hu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
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12
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Wang WS, Shi ZW, Chen XL, Li Y, Xiao H, Zeng YH, Pi XD, Zhu LQ. Biodegradable Oxide Neuromorphic Transistors for Neuromorphic Computing and Anxiety Disorder Emulation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47640-47648. [PMID: 37772806 DOI: 10.1021/acsami.3c07671] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/30/2023]
Abstract
Brain-inspired neuromorphic computing and portable intelligent electronic products have received increasing attention. In the present work, nanocellulose-gated indium tin oxide neuromorphic transistors are fabricated. The device exhibits good electrical performance. Short-term synaptic plasticities were mimicked, including excitatory postsynaptic current, paired-pulse facilitation, and dynamic high-pass synaptic filtering. Interestingly, an effective linear synaptic weight updating strategy was adopted, resulting in an excellent recognition accuracy of ∼92.93% for the Modified National Institute of Standard and Technology database adopting a two-layer multilayer perceptron neural network. Moreover, with unique interfacial protonic coupling, anxiety disorder behavior was conceptually emulated, exhibiting "neurosensitization", "primary and secondary fear", and "fear-adrenaline secretion-exacerbated fear". Finally, the neuromorphic transistors could be dissolved in water, demonstrating potential in "green" electronics. These findings indicate that the proposed oxide neuromorphic transistors would have potential as implantable chips for nerve health diagnosis, neural prostheses, and brain-machine interfaces.
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Affiliation(s)
- Wei Sheng Wang
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, Zhejiang, P.R. China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, P.R. China
| | - Zhi Wen Shi
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, Zhejiang, P.R. China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, P.R. China
| | - Xin Li Chen
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, Zhejiang, P.R. China
| | - Yan Li
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, Zhejiang, P.R. China
| | - Hui Xiao
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, P.R. China
| | - Yu Heng Zeng
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, P.R. China
| | - Xiao Dong Pi
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Li Qiang Zhu
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, Zhejiang, P.R. China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, P.R. China
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13
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Wei H, Xu Z, Ni Y, Yang L, Sun L, Gong J, Zhang S, Qu S, Xu W. Mixed-Dimensional Nanoparticle-Nanowire Channels for Flexible Optoelectronic Artificial Synapse with Enhanced Photoelectric Response and Asymmetric Bidirectional Plasticity. NANO LETTERS 2023; 23:8743-8752. [PMID: 37698378 DOI: 10.1021/acs.nanolett.3c02836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
A mixed-dimensional dual-channel synaptic transistor composed of inorganic nanoparticles and organic nanowires was fabricated to expand the photoelectric gain range. The device can actualize the sensitization features of the nociceptor and shows improved responsiveness to visible light. Under electrical pulses with different polarities, the apparatus exhibits reconfigurable asymmetric bidirectional plasticity. Moreover, the devices demonstrate good operational tolerance and mechanical stability, retaining more than 60% of their maximum responsiveness after 100 consecutive/bidirectional and 1000 flex/flat operations. The improved photoelectric response of the device endows a high image recognition accuracy of greater than 80%. Asymmetric bidirectional plasticity is used as punishment/reward in a psychological experiment to emulate the improvement of learning motivation and enables real-time forward and backward deflection (+7 and -25°) of artificial muscle. The mixed-dimensional optoelectronic artificial synapses with switchable behavior and electron/hole transport type have important prospects for neuromorphic processing and artificial somatosensory nerves.
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Affiliation(s)
- Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
- Institutes of Physical Science and Information Technology, School of Materials Science and Engineering, Key Laboratory of Structure and Functional Regulation of Hybrid Materials, Anhui University, Ministry of Education, Hefei 230601, People's Republic of China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
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