Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers

DFT-Computational Modeling and TiberCAD Frameworks for Photovoltaic Performance Investigation of Copper-Based 2D Hybrid Perovskite Solar Absorbers

In this work, we use a combination of dispersion-corrected density functional theory (DFT-D3) and the TiberCAD framework for the first time to investigate a newly designed and synthesized class of (C6H10N2)[CuCl4] 2D-type perovskite. The inter- and intra-atomic reorganization in the crystal packing and the type of interaction forming in the active area have been discussed via Hirshfeld surface (HS) analyses. A distinct charge transfer from CuCl4 to [C6H10N2] is identified by frontier molecular orbitals (FMOs) and density of states (DOS). This newly designed narrow-band gap small-molecule perovskite, with an energy gap (E g) of 2.11 eV, exhibits a higher fill factor (FF = 81.34%), leading to an open-circuit voltage (V oc) of 1.738 V and a power conversion efficiency (PCE) approaching ∼10.20%. The interaction between a donor (D) and an acceptor (A) results in a charge transfer complex (CT) through the formation of hydrogen bonds (Cl-H), as revealed by QTAIM analysis. These findings were further supported by 2D-LOL and 3D-ELF analyses by visualizing excess electrons surrounding the acceptor entity. Finally, we performed numerical simulations of solar cell structures using TiberCAD software.

Design and Optimization of High-Performance Novel RbPbBr3-Based Solar Cells with Wide-Band-Gap S-Chalcogenide Electron Transport Layers (ETLs)

Inorganic cubic rubidium-lead-halide perovskites have attracted considerable attention owing to their structural, electronic, and unique optical properties. In this study, novel rubidium-lead-bromide (RbPbBr3)-based hybrid perovskite solar cells (HPSCs) with several high-band-gap chalcogenide electron transport layers (ETLs) of In2S3, WS2, and SnS2 were studied by density functional theory (DFT) and using the SCAPS-1D simulator. Initially, the band gap and optical performance were computed using DFT, and these results were utilized for the first time in the SCAPS-1D simulator. Furthermore, the impact of different major influencing parameters, that is, the thickness of the layer, bulk defect density, doping concentration, and defect density of interfaces, including the working temperature, were also investigated and unveiled. Further, a study on an optimized device with the most potential ETL (SnS2) layer was performed systematically. Finally, a comparative study of different reported heterostructures was performed to explore the benchmark of the most recent efficient RbPbBr3-based photovoltaics. The highest power conversion efficiency (PCE) was 29.75% for the SnS2 ETL with Voc of 0.9789 V, Jsc of 34.57863 mA cm-2, and fill factor (FF) of 87.91%, while the PCEs of 21.15 and 24.57% were obtained for In2S3 and WS2 ETLs, respectively. The electron-hole generation, recombination rates, and quantum efficiency (QE) characteristics were also investigated in detail. Thus, the SnS2 ETL shows strong potential for use in RbPbBr3-based hybrid perovskite high-performance photovoltaic devices.

A novel investigation of pressure-induced semiconducting to metallic transition of lead free novel Ba3SbI3 perovskite with exceptional optoelectronic properties

The structural, electronic, mechanical, and optical characteristics of barium-based halide perovskite Ba3SbI3 under the influence of pressures ranging from 0 to 10 GPa have been analyzed using first-principles calculations for the first time. The new perovskite Ba3SbI3 material was shown to be a direct band gap semiconductor at 0 GPa, but the band gap diminished when the applied pressure increased from 0 to 10 GPa. So the Ba3SbI3 material undergoes a transition from semiconductor to metallic due to high pressure at 10 GPa. The Ba3SbI3 material also exhibits an increase in optical absorption and conductivity with applied pressure due to the change in band gap, which is more suitable for solar absorbers, surgical instruments, and optoelectronic devices. The charge density maps confirm the presence of both ionic and covalent bonding characteristics. Exploration into the mechanical characteristics indicates that the Ba3SbI3 perovskite is mechanically stable. Additionally, the Ba3SbI3 compound becomes strongly anisotropic at high pressure. The insightful results of our simulations will all be helpful for the experimental structure of a new effective Ba3SbI3-based inorganic perovskite solar cell in the near future.

Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS2) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

The domain related to the use of renewable energy is showing high interest among the researchers in the current days, and light energy can be considered as one of such. Solar cells are the kind of devices that use light energy in an efficient way to generate electricity. Hence, designing and developing a solar cell requires meticulous attention to get an optimum output. This work focuses on designing and optimization of aluminum dope ZnO/phenyl-C-butyric acid methyl ester/tungsten disulfide (AZO/PCBM/WS2) heterojunction-based device for applications in solar cells. Moreover, considering the high demand of optoelectronics like photodetectors, this work also uncovers the capabilities of the device in the applications of broadband self-powered photodetectors. The optimized values of several parameters of the device such as the thickness and doping density of the WS2 layer, the defect density of the WS2 layer, and the interface PCBM/WS2 were 2 μm, 1017 cm-3, 1014 cm-3, and 1010 cm-2, respectively. These optimal conditions facilitated in obtaining fill factor and efficiency values of 84.78 and 23.92%, respectively. Further, the photodetection performance was evaluated with the parameters like responsivity and detectivity. The maximum calculated responsivity of the device at 0 V bias was 0.63 A/W at 880 nm, whereas the maximum detectivity was 1.54 × 1013 Jones. This study also extensively focuses on the in-depth understanding of the physics associated with the movement of the charge carriers under the illuminated conditions by studying the band diagrams and the electric fields of the heterojunctions at various conditions.

Alothman A, Mohammad S. Hydrothermal Synthesis, Phase Analysis, and Magneto-Electronic Characterizations of Lead-Free Ferroelectric BM2+(Zn, Ca, Mg)T-BFO System

In this study, lead-free BiM2+(Zn, Ca, Mg)Ti-BiFeO3 ceramics are fabricated under eco-friendly hydrothermal reaction conditions at 250 °C. XRD patterns show that all the synthesized compounds exhibit a phase coexistence of monoclinic and tetragonal perovskite-type structures with a morphotropic phase boundary at x = 0.4, with minimum impurity. The calculated average crystallite/grain size of the samples was close to 50 nm at full width at half-maximum of the main peak. The corresponding bonds of the constituent elements were observed by FTIR analysis, which further supports the formation of the local structure. EDS analyses detect all of the elements, their quantities, and compositional homogeneity. SEM data show agglomerated and nearly spherical morphology with an average particle size of about 128 nm. All synthesized ceramic powders revealed thermal stability with trivial mass loss up to investigated high temperatures (1000 οC). The dielectric constant reached its maximum at 38.7 MHz and finally remained constant after 80 MHz for all nanoceramics. Because of the complementary impact of different compositions, the most effective piezoelectric characteristics of d33 = 136 pCN-1, Pr = 8.6 pCN-1 cm-2, and kp = 11% at 30 °C were attained at x = 0.4 content for 0.4BiCaTi-0.6BiFeO3 ceramic. The measured magnetic hysteresis data (M-H curve) showed a weak ferromagnetic nature with the highest moment of ∼0.23 emu/g for 0.4BiCaTi-0.6BiFeO3, and other samples exhibited negligible ferromagnetic to diamagnetic transition. The optical response study shows that the 0.4BiMgTi-0.6BiFeO3 sample yielded the maximal transmittance (50%), whereas the 0.4BiCaTi-0.6BiFeO3 compound exhibited the highest refractive index. The calculated large band gap shows a high insulating or dielectric nature. Our findings demonstrate that the BiM2+Ti-BiFeO3 system, which was fabricated using a low-temperature hydrothermal technique, is an excellent lead-free piezoelectric and multiferroic nanoceramic.

Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D

The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS2/CIGS/Sb2S3/Ni) is explored by utilizing the SCAPS-1D simulation software. Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage (C-V), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF. The presence of the BSF layer significantly influences the device's performance parameters including short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE). After optimization, the simulation results of a conventional CIGS cell (FTO/SnS2/CIGS/Ni) have shown a PCE of 22.14% with Voc of 0.91 V, Jsc of 28.21 mA cm-2, and FF of 86.31. Conversely, the PCE is improved to 31.15% with Voc of 1.08 V, Jsc of 33.75 mA cm-2, and FF of 88.50 by introducing the Sb2S3 BSF in the structure of FTO/SnS2/CIGS/Sb2S3/Ni. These findings of the proposed CIGS-based double heterojunction (DH) solar cells offer an innovative method for realization of high-efficiency solar cells that are more promising than the previously reported traditional designs.

Effects of electron transport layer type on the performance of Pb-free Cs2AgBiBr6 double perovskites: a SCAPS-1D solar simulator-based study

Recently, due to the superior stability and lower risk of toxicity, the development of Pb-free halide double perovskite materials has revived excellent interest. In this work, Pb-free perovskite solar cells (PSCs) with ITO/ETL/Cs2AgBiBr6/Cu2O/Au multilayer structures with Cs2AgBiBr6 double perovskite as the solar light absorber layer, some electron transport layers (ETLs) and Cu2O as a hole transport layer have been introduced. Then, the effects of various thicknesses of the absorber layer and also ETL materials, like ZnO, C60, CdS, SnO2, phenyl-C61-butyric acid methyl ester (PCBM), and TiO2, on the device performance (including photoelectronic conversion efficiency (PCE), fill factor (FF%), short circuit current density (Jsc), and open-circuit voltage (VOC)) were examined with the help of a solar cell simulator (SCAPS-1D). It is noteworthy that, in the case of all ETL materials, the optimal thickness of the absorber layer was determined to be 400 nm. Then, the maximum PCE values of 20.08%, 17.63%, 14.07%, 12.11%, 14.94%, and 18.83% were obtained for the solar cells containing ZnO, C60, CdS, SnO2, PCBM, and TiO2 as the ETL, respectively. These results show that designing/developing Pb-free halide double perovskite devices having comparable PCEs with the Pb-based PSCs is feasible, provided that proper/compatible materials will be used in the multilayer structure of the next generations of solar cells.

Pivotal avenue for hybrid electron transport layer-based perovskite solar cells with improved efficiency

This study conducted a simulative analysis of different hybrid perovskite solar cells with various hybrid electron transport layers (ETL) and hole transport layers (HTL). The electron transport layer boosts durability, lowers production costs, increases stability, improves light absorption, and increases efficiency. Hybrid ETLs are taken into consideration to improve the device's performance. The selected hybrid ETLs (PCBM-SnS2, TiO2-SnO2, and PCBM-PCPB) were modeled with four hybrid perovskite absorbers (CsPbI3, FAPbI3, MAPbI3, and FAMAPbI3) and five HTLs (PEDOT: PSS, CuI, Spiro-OMeTAD, CBTS, and NiO). Three sets of solar cells are found to be the most effective configurations after investigating over sixty different combinations of perovskite solar cell architectures. The structures show CBTS as the efficient HTL for FAMAPbI3 with all three hybrid ETLs. Besides, a holistic analysis of the effect of several factors such as the defect density and thickness of the absorber layer, temperature, parasitic resistances, capacitance, Mott-Schottky, impedance, conduction band offset, and current density-voltage and quantum efficiency characteristics is performed. The results show a maximum power conversion efficiency of 25.57%, 26.35%, and 23.36% with PCBM-SnS2, TiO2-SnO2, and PCBM-PCPB respectively. Among the studied hybrid ETLs, perovskite solar cell associated with TiO2-SnO2 has depicted a superior performance (Voc = 1.12 V, Jsc = 26.88 mA/cm2, FF = 87.27%). The efficiency of the perovskite solar cell using this study has been drastically enhanced compared to the previous experimental report. The proposed strategy provides a new avenue for attaining clean energy and allows researchers to pave the way for further design optimization to obtain high-performance solar cell devices.

Lead-free novel perovskite Ba3AsI3: First-principles insights into its electrical, optical, and mechanical properties

Lead-free halide perovskites are a crucial family of materials in the fabrication of solar cells. At present, Solar cells are facing several challenges such as mechanical and thermodynamic instability, toxicity, unsuitable optical parameters, bandgap, and absorption coefficient. Ba3AsI3 is a halide perovskite which has demonstrated good efficiency and tremendous promise for usage in solar cell applications, and it offers a possible solution to these issues. In this study, the properties of the Ba3AsI3 perovskite solar cell were investigated using first-principles density functional theory (FP-DFT) calculations with the CASTEP (Cambridge serial total energy package) formulation. Most of its physical qualities, including its elasticity, electrical composition, bonding, optoelectronic characteristics, and optical characteristics have not yet been explored. In this work, these unexplored properties have been thoroughly investigated using density functional theory-based computations. The Born-Huang criterion and phonon dispersion characteristics have revealed that the material is mechanically stable. The bonding nature has been investigated using the density of states curves, Mulliken population analysis, and electronic charge density. Additionally, different elastic parameters demonstrate that Ba3AsI3 has reasonably high machinability and is mechanically isotropic. ELATE's three-dimensional visualization and optical properties also show isotropic behavior in all directions. The band structure shows that the bandgap is direct. Based on its direct bandgap, stability, large range of absorption coefficient, and suitable optical parameters, Ba3AsI3 is recommended as an absorber layer for solar cell fabrication in a near future.

Boosting efficiency above 28% using effective charge transport layer with Sr3SbI3 based novel inorganic perovskite

Strontium antimony iodide (Sr3SbI3) is one of the emerging absorbers materials owing to its intriguing structural, electronic, and optical properties for efficient and cost-effective solar cell applications. A comprehensive investigation on the structural, optical, and electronic characterization of Sr3SbI3 and its subsequent applications in heterostructure solar cells have been studied theoretically. Initially, the optoelectronic parameters of the novel Sr3SbI3 absorber, and the possible electron transport layer (ETL) of tin sulfide (SnS2), zinc sulfide (ZnS), and indium sulfide (In2S3) including various interface layers were obtained by DFT study. Afterward, the photovoltaic (PV) performance of Sr3SbI3 absorber-based cell structures with SnS2, ZnS, and In2S3 as ETLs were systematically investigated at varying layer thickness, defect density bulk, doping density, interface density of active materials including working temperature, and thereby, optimized PV parameters were achieved using SCAPS-1D simulator. Additionally, the quantum efficiency (QE), current density-voltage (J-V), and generation and recombination rates of photocarriers were determined. The maximum power conversion efficiency (PCE) of 28.05% with JSC of 34.67 mA cm-2, FF of 87.31%, VOC of 0.93 V for SnS2 ETL was obtained with Al/FTO/SnS2/Sr3SbI3/Ni structure, while the PCE of 24.33%, and 18.40% in ZnS and In2S3 ETLs heterostructures, respectively. The findings of this study contribute to in-depth understanding of the physical, electronic, and optical properties of Sr3SbI3 absorber perovskite and SnS2, ZnS, and In2S3 ETLs. Additionally, it provides valuable insights into the potential of Sr3SbI3 in heterostructure perovskite solar cells (PSCs), paving the pathway for further experimental design of an efficient and stable PSC devices.

Outstanding conversion efficiency of 38.39% from a Perovskite/CIGS tandem PV cell: A synergic optimization through computational modeling

An all-inorganic lead-free tandem PV cell consisting of two sub-cells CsSn0.5Ge0.5I3 (perovskite) based top cell/CIGS-based bottom cell has been designed, simulated, and optimized by varying the thickness of pertinent layers utilizing the SCAPS-1D simulator. In the top sub-cell, a wide bandgap lead-free inorganic CsSn0.5Ge0.5I3 perovskite is inserted as the primary absorber layer because of its distinctive characteristics with an ETL of ZnO, which is recognized for its high electron mobility & absorption coefficient, and an HTL of NiO to offer increased hole mobility with good chemical-durability. For the bottom sub-cell, we have selected p-type CIGS as the absorber with Spiro-OMeTAD as the apposite HTL to provide suitable offsets of valence and conduction band distribution and TiO2 as ETL to offer low-cost, low-ecotoxicity, excellent optical properties, and chemical-stability and thus offers improved efficiency of the overall tandem structure. In the beginning, the two sub-cells were simulated independently; the top sub-cell was simulated under the standard spectrum of AM1.5G, while the bottom sub-cell was optimized using a filtered spectrum. Thereafter, the current matching point of both cells was attained by optimizing the absorber layer thicknesses. Finally, our computational modeling and simulation results offer the optimized cell structure revealing an outstanding overall 38.39% power conversion efficiency (PCE), Fill Factor (FF) of 83.4%, open-circuit voltage (V O C ) of 2.48 V, and short-circuit current density (J s c ) of 18.64 mA cm-2. The proposed tandem structure's performance matrices outperform those stated in the most recent literature. These outcomes of the proposed structure are expected to facilitate the development and production of a low-cost and highly effective inorganic perovskite Tandem PV cell in the future.

Achieving above 24% efficiency with non-toxic CsSnI3 perovskite solar cells by harnessing the potential of the absorber and charge transport layers

Lead toxicity is a barrier to the widespread commercial manufacture of lead halide perovskites and their use in solar photovoltaic (PV) devices. Eco-friendly lead-free perovskite solar cells (PSCs) have been developed using certain unique non- or low-toxic perovskite materials. In this context, Sn-based perovskites have been identified as promising substitutes for Pb-based perovskites due to their similar characteristics. However, Sn-based perovskites suffer from chemical instability, which affects their performance in PSCs. This study employs theoretical simulations to identify ways to improve the efficiency of Sn-based PSCs. The simulations were conducted using the SCAPS-1D software, and a lead-free, non-toxic, and inorganic perovskite absorber layer (PAL), i.e. CsSnI3 was used in the PSC design. The properties of the hole transport layer (HTL) and electron transport layer (ETL) were tuned to optimize the performance of the device. Apart from this, seven different combinations of HTLs were studied, and the best-performing combination was found to be ITO/PCBM/CsSnI3/CFTS/Se, which achieved a power conversion efficiency (PCE) of 24.73%, an open-circuit voltage (VOC) of 0.872 V, a short-circuit current density (JSC) of 33.99 mA cm-2 and a fill factor (FF) of 83.46%. The second highest PCE of 18.41% was achieved by the ITO/PCBM/CsSnI3/CuSCN/Se structure. In addition to optimizing the structure of the PSC, this study also analyzes the current density-voltage (J-V) along with quantum efficiency (QE), as well as the impact of series resistance, shunt resistance, and working temperature, on PV performance. The results demonstrate the potential of the optimized structure identified in this study to enhance the standard PCE of PSCs. Overall, this study provides important insights into the development of lead-free absorber materials and highlights the potential of using CsSnI3 as the PAL in PSCs. The optimized structure identified in this study can be used as a base for further research to improve the efficiency of Sn-based PSCs.

Inorganic novel cubic halide perovskite Sr3AsI3: Strain-activated electronic and optical properties

In recent years, inorganic perovskite materials have attracted a lot of attention in the field of solar technology due to their exceptional structural, optical, and electronic properties. This study thoroughly investigated, using first-principles density-functional theory (FP-DFT), the impact of compressive and tensile strain on the structural, optical, and electrical properties of the inorganic cubic perovskite Sr3AsI3. The unstrained planar Sr3AsI3 molecule exhibits a direct bandgap of 1.265 eV value at Γ point. The bandgap of the Sr3AsI3 perovskite is lowered to 1.212 eV when the relativistic spin-orbital coupling (SOC) effect is subjected in the observations. In addition, the structure's bandgap exhibits a falling prevalence due to compressive strain and a slight rise due to tensile strain. The optical indicators such as dielectric functions, absorption coefficient, reflectivity, and electron loss function show that this component has a great ability to absorb in the visible range in accordance with band characteristics. When compressive strain is raised, it is discovered that the spikes of the dielectric constant of Sr3AsI3 move to lower photon energy (redshift), and conversely, while growing tensile strain, it exhibits increased photon energy changing behavior (blueshift). As a result, the Sr3AsI3 perovskite is regarded as being ideal for use in solar cells for the production of electricity and light management.

Harnessing the potential of CsPbBr3-based perovskite solar cells using efficient charge transport materials and global optimization

Perovskite solar cells (PSCs) have become a possible alternative to traditional photovoltaic devices for their high performance, low cost, and ease of fabrication. Here in this study, the SCAPS-1D simulator numerically simulates and optimizes CsPbBr₃-based PSCs under the optimum illumination situation. We explore the impact of different back metal contacts (BMCs), including Cu, Ag, Fe, C, Au, W, Pt, Se, Ni, and Pd combined with the TiO₂ electron transport layer (ETL) and CFTS hole transport layer (HTL), on the performance of the devices. After optimization, the ITO/TiO₂/CsPbBr₃/CFTS/Ni structure showed a maximum power conversion efficiency (PCE or η) of 13.86%, with Ni as a more cost-effective alternative to Au. After the optimization of the BMC the rest of the investigation is conducted both with and without HTL mode. We investigate the impact of changing the thickness and the comparison with acceptor and defect densities (with and without HTL) of the CsPbBr₃ perovskite absorber layer on the PSC performance. Finally, we optimized the thickness, charge carrier densities, and defect densities of the absorber, ETL, and HTL, along with the interfacial defect densities at HTL/absorber and absorber/ETL interfaces to improve the PCE of the device; and the effect of variation of these parameters is also investigated both with and without HTL connected. The final optimized configuration achieved a V_OC of 0.87 V, J_SC of 27.57 mA cm^-2, FF of 85.93%, and PCE of 20.73%. To further investigate the performance of the optimized device, we explore the impact of the temperature, shunt resistance, series resistance, capacitance, generation rate, recombination rate, Mott-Schottky, JV, and QE features of both with and without HTL connected. The optimized device offers the best thermal stability at a temperature of 300 K. Our study highlights the potential of CsPbBr₃-based PSCs and provides valuable insights for their optimization and future development.

Deep Insights into the Coupled Optoelectronic and Photovoltaic Analysis of Lead-Free CsSnI3 Perovskite-Based Solar Cell Using DFT Calculations and SCAPS-1D Simulations

CsSnI₃ is considered to be a viable alternative to lead (Pb)-based perovskite solar cells (PSCs) due to its suitable optoelectronic properties. The photovoltaic (PV) potential of CsSnI₃ has not yet been fully explored due to its inherent difficulties in realizing defect-free device construction owing to the nonoptimized alignment of the electron transport layer (ETL), hole transport layer (HTL), efficient device architecture, and stability issues. In this work, initially, the structural, optical, and electronic properties of the CsSnI₃ perovskite absorber layer were evaluated using the CASTEP program within the framework of the density functional theory (DFT) approach. The band structure analysis revealed that CsSnI₃ is a direct band gap semiconductor with a band gap of 0.95 eV, whose band edges are dominated by Sn 5s/5p electrons After performing the DFT analysis, we investigated the PV performance of a variety of CsSnI₃-based solar cell configurations utilizing a one-dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs such as IGZO, WS₂, CeO₂, TiO₂, ZnO, PCBM, and C₆₀. Simulation results revealed that the device architecture comprising ITO/ETL/CsSnI₃/CuI/Au exhibited better photoconversion efficiency among more than 70 different configurations. The effect of the variation in the absorber, ETL, and HTL thickness on PV performance was analyzed for the above-mentioned configuration thoroughly. Additionally, the impact of series and shunt resistance, operating temperature, capacitance, Mott-Schottky, generation, and recombination rate on the six superior configurations were evaluated. The J-V characteristics and the quantum efficiency plots for these devices are systematically investigated for in-depth analysis. Consequently, this extensive simulation with validation results established the true potential of CsSnI₃ absorber with suitable ETLs including ZnO, IGZO, WS₂, PCBM, CeO₂, and C₆₀ ETLs and CuI as HTL, paving a constructive research path for the photovoltaic industry to fabricate cost-effective, high-efficiency, and nontoxic CsSnI₃ PSCs.

Insights into the photovoltaic properties of indium sulfide as an electron transport material in perovskite solar cells

According to recent reports, planar structure-based organometallic perovskite solar cells (OPSCs) have achieved remarkable power conversion efficiency (PCE), making them very competitive with the more traditional silicon photovoltaics. A complete understanding of OPSCs and their individual parts is still necessary for further enhancement in PCE. In this work, indium sulfide (In₂S₃)-based planar heterojunction OPSCs were proposed and simulated with the SCAPS (a Solar Cell Capacitance Simulator)-1D programme. Initially, OPSC performance was calibrated with the experimentally fabricated architecture (FTO/In₂S₃/MAPbI₃/Spiro-OMeTAD/Au) to evaluate the optimum parameters of each layer. The numerical calculations showed a significant dependence of PCE on the thickness and defect density of the MAPbI₃ absorber material. The results showed that as the perovskite layer thickness increased, the PCE improved gradually but subsequently reached a maximum at thicknesses greater than 500 nm. Moreover, parameters involving the series resistance as well as the shunt resistance were recognized to affect the performance of the OPSC. Most importantly, a champion PCE of over 20% was yielded under the optimistic simulation conditions. Overall, the OPSC performed better between 20 and 30 °C, and its efficiency rapidly decreases above that temperature.

An extensive study on multiple ETL and HTL layers to design and simulation of high-performance lead-free CsSnCl3-based perovskite solar cells

Cesium tin chloride (CsSnCl₃) is a potential and competitive absorber material for lead-free perovskite solar cells (PSCs). The full potential of CsSnCl₃ not yet been realized owing to the possible challenges of defect-free device fabrication, non-optimized alignment of the electron transport layer (ETL), hole transport layer (HTL), and the favorable device configuration. In this work, we proposed several CsSnCl₃-based solar cell (SC) configurations using one dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs like indium-gallium-zinc-oxide (IGZO), tin-dioxide (SnO₂), tungsten disulfide (WS₂), ceric dioxide (CeO₂), titanium dioxide (TiO₂), zinc oxide (ZnO), C₆₀, PCBM, and HTLs of cuprous oxide (Cu₂O), cupric oxide (CuO), nickel oxide (NiO), vanadium oxide (V₂O₅), copper iodide (CuI), CuSCN, CuSbS₂, Spiro MeOTAD, CBTS, CFTS, P3HT, PEDOT:PSS. Simulation results revealed that ZnO, TiO₂, IGZO, WS₂, PCBM, and C₆₀ ETLs-based halide perovskites with ITO/ETLs/CsSnCl₃/CBTS/Au heterostructure exhibited outstanding photoconversion efficiency retaining nearest photovoltaic parameters values among 96 different configurations. Further, for the six best-performing configurations, the effect of the CsSnCl₃ absorber and ETL thickness, series and shunt resistance, working temperature, impact of capacitance, Mott-Schottky, generation and recombination rate, current-voltage properties, and quantum efficiency on performance were assessed. We found that ETLs like TiO₂, ZnO, and IGZO, with CBTS HTL can act as outstanding materials for the fabrication of CsSnCl₃-based high efficiency (η ≥ 22%) heterojunction SCs with ITO/ETL/CsSnCl₃/CBTS/Au structure. The simulation results obtained by the SCAPS-1D for the best six CsSnCl₃-perovskites SC configurations were compared by the wxAMPS (widget provided analysis of microelectronic and photonic structures) tool for further validation. Furthermore, the structural, optical and electronic properties along with electron charge density, and Fermi surface of the CsSnCl₃ perovskite absorber layer were computed and analyzed using first-principle calculations based on density functional theory. Thus, this in-depth simulation paves a constructive research avenue to fabricate cost-effective, high-efficiency, and lead-free CsSnCl₃ perovskite-based high-performance SCs for a lead-free green and pollution-free environment.

Optical performance analysis of InP nanostructures for photovoltaic applications

In this article, we have performed a comparative analysis of six different types of nanostructures that can improve photon management for photovoltaic applications. These nanostructures act as anti-reflective structures by improving the absorption characteristics and tailoring the optoelectronic properties of the associated devices. The absorption enhancement in indium phosphide (InP) and silicon (Si) based cylindrical nanowires (CNWs) and rectangular nanowires (RNWs), truncated nanocones (TNCs), truncated nanopyramids (TNPs), inverted truncated nanocones (ITNCs), and inverted truncated nanopyramids (ITNPs) are computed using the finite element method (FEM) based commercial COMSOL Multiphysics package. The influence of geometrical dimensions of the investigated nanostructures such as period (P), diameter (D), width (W), filling ratio (FR), bottom W and D (W_bot/D_bot), and top W and D (W_top/D_top) on the optical performance are analyzed in detail. Optical short circuit current density (J_sc) is computed using the absorption spectra. The results of numerical simulations indicate that InP nanostructures are optically superior to Si nanostructures. In addition to this, the InP TNP generates an optical short circuit current density (J_sc) of 34.28 mA cm⁻², which is ∼10 mA cm⁻² higher than its Si counterpart. The effect of incident angle on the ultimate efficiency of the investigated nanostructures in transverse electric (TE) and transverse magnetic (TM) modes is also explored. Theoretical insights into the design strategies of different nanostructures proposed in this article will act as a benchmark for choosing the device dimensions of appropriate nanostructures for the fabrication of efficient photovoltaic devices.

The optical performance of different indium phosphide (InP) nanostructures are investigated using Wave Optics Module of COMSOL Multiphysics. Our results indicate that InP based nanostructures outperform silicon based nanostructures.