1
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Zhang T, Zu Y, Zeng B, Gan R, Liu P, Li X, Han F, Qian Y, Zhao L, Feng A, Wu Z. Anion regulation for surface passivation enables ultrahigh-stability perovskite nanocrystals. J Chem Phys 2024; 161:164710. [PMID: 39450731 DOI: 10.1063/5.0234793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/23/2024] [Accepted: 10/10/2024] [Indexed: 10/26/2024] Open
Abstract
All-inorganic perovskite CsPbBr3 nanocrystals (NCs) display high photoluminescence quantum yield and narrow emission, which show great potential application in optoelectronic devices. However, the poor environment stability of NCs will hinder their practical application. Herein, a series of ionic liquids with different anions (BF4-, Br-, and NO3-) were used as a sole capping ligand to synthesize NCs. Among the three samples, 1-hexadecyl-3-methylimidazolium tetrafluoroborate ([C16MIM]BF4) capped NCs have the highest stability in light, thermal, and water, possibly attributing to the in situ passivation of bromine vacancy via pseudohalogen BF4- and tight binding of ionic liquid ligands and lead atoms. In addition, green-emission [C16MIM]BF4 NCs were used to assemble a white light-emitting diode device, and it possessed a wide National Television System Committee color gamut of 124.5% and a stable emission peak at high driving currents of 380 mA. This work paves the way for resurfacing perovskite NCs with ultrahigh stability, thereby driving the perovskite NC display industry closer to real-world application.
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Affiliation(s)
- Tong Zhang
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Yanqing Zu
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Binglin Zeng
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Run Gan
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Peitao Liu
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Xiaodong Li
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Fengbo Han
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Yu Qian
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Lei Zhao
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Ailing Feng
- Institute of Physics and Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, Shaanxi, People's Republic of China
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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2
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Wang Y, Liu ZS, Zhao F, Liu WZ, Shen WS, Zhou DY, Wang YK, Liao LS. Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes. Angew Chem Int Ed Engl 2024; 63:e202407833. [PMID: 38984901 DOI: 10.1002/anie.202407833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2024] [Revised: 07/05/2024] [Accepted: 07/09/2024] [Indexed: 07/11/2024]
Abstract
Near-infrared light-emitting diodes (NIR LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiency (EQE) of ~15 %. However, these high-performance NIR-QLEDs suffer from immediate carrier quenching because of the accumulation of migratable ions at the surface of the QDs. These uncoordinated ions and carriers-if not bound to the nanocrystal surface-serve as centers for exciton quenching and device degradation. In this work, we overcome this issue and fabricate high-performance NIR QLEDs by devising a ligand anchoring strategy, which entails dissolving the strong-binding ligand (Guanidine Hydroiodide, GAI) in the mediate-polar solvent. By employing the dye-sensitized device structure (phosphorescent indicator), we demonstrate the elimination of the interface defects. The treated QDs films exhibit an exciton binding energy of 117 meV: this represents a 1.5-fold increase compared to that of the control (74 meV). We report, as a result, the NIR QLEDs with an EQE of 21 % which is a record among NIR perovskite QLEDs. These QLEDs also exhibit a 7-fold higher operational stability than that of the best previously reported NIR QLEDs. Furthermore, we demonstrate that the QDs are compatible with large-area QLEDs: we showcase 900 mm2 QLEDs with EQE approaching 20 %.
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Affiliation(s)
- Ye Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Zong-Shuo Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Feng Zhao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Wei-Zhi Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Wan-Shan Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Dong-Ying Zhou
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Ya-Kun Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, 999078, Macau, China
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Ye L, Chen J, Zhang M, Wang G, Zhang X. In Situ Formation of Iodide Precursor for Perovskite Quantum Dots with Application in Efficient Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2405518. [PMID: 39139103 DOI: 10.1002/smll.202405518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2024] [Revised: 07/29/2024] [Indexed: 08/15/2024]
Abstract
Perovskite quantum dots (PQDs) become a kind of competitive material for fabricating high-performance solar cells due to their solution processability and outstanding optoelectronic properties. However, the current synthesis method of PQDs is mostly based on the binary-precursor method, which results in a large deviation of the I/Pb input ratio in the reaction system from the stoichiometric ratio of PQDs. Herein, a ternary-precursor method with an iodide source self-filling ability is reported for the synthesis of the CsPbI3 PQDs with high optoelectronic properties. Systematically experimental characterizations and theoretical calculations are conducted to fundamentally understand the effects of the I/Pb input molar ratio on the crystallographic and optoelectronic properties of PQDs. The results reveal that increasing the I/Pb input molar ratio can obtain ideal cubic structure PQDs with iodine-rich surfaces, which can significantly reduce the surface defects of PQDs and realize high orientation of PQD solids, facilitating charge carrier transport in the PQD solids with diminished nonradiative recombination. Consequently, the PQD solar cells exhibit an impressive efficiency of 15.16%, which is largely improved compared with that of 12.83% for the control solar cell. This work provides a feasible strategy for synthesizing high-quality PQDs for high-performance optoelectronic devices.
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Affiliation(s)
- Lvhao Ye
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Jingxuan Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Mingxu Zhang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Guoliang Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaoliang Zhang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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4
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Gao Y, Cai Q, He Y, Zhang D, Cao Q, Zhu M, Ma Z, Zhao B, He H, Di D, Ye Z, Dai X. Highly efficient blue light-emitting diodes based on mixed-halide perovskites with reduced chlorine defects. SCIENCE ADVANCES 2024; 10:eado5645. [PMID: 39018409 PMCID: PMC466955 DOI: 10.1126/sciadv.ado5645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2024] [Accepted: 06/14/2024] [Indexed: 07/19/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) provide excellent opportunities for low-cost, color-saturated, and large-area displays. However, the performance of blue PeLEDs lags far behind that of their green and red counterparts. Here, we show that the external quantum efficiencies (EQEs) of blue PeLEDs scale linearly with the photoluminescence quantum yields (PL QYs) of CsPb(BrxCl1-x)3 nanocrystals emitting at 460 to 480 nm. The recombination efficiency of carriers is highly sensitive to the chlorine content and the related deep-level defects in nanocrystals, causing notable EQE drops even with minor increases in chlorine defects. Minor adjustments of chlorine content through rubidium compensation on the A-site effectively suppress the formation of nonradiative defects, improving PL QYs while retaining desirable bandgaps for blue-emitting nanocrystals. Our PeLEDs with record-high efficiencies span the blue spectrum, achieving peak EQEs of 12.0% (460 nm), 16.7% (465 nm), 21.3% (470 nm), 24.3% (475 nm), and 26.4% (480 nm). This work exemplifies chlorine-defect control as a key design principle for high-efficiency blue PeLEDs.
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Affiliation(s)
- Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Yifan He
- Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China
| | - Dingshuo Zhang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qingli Cao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Zichao Ma
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Baodan Zhao
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
| | - Dawei Di
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
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5
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Rahman SU, Song YH, Yao HB. Modification strategies of lead halide perovskite nanocrystals for efficient and stable LEDs. Chem Commun (Camb) 2024; 60:6988-6998. [PMID: 38895748 DOI: 10.1039/d4cc02072c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Lead halide perovskite nanocrystals (PNCs) hold immense promise in high-performance light-emitting diodes (LEDs) for future high-definition displays. Their adjustable bandgaps, vivid colors, and good carrier mobility are key factors that make them a potential game-changer. However, to fully harness their potential, the efficiency and long-term stability of PNCs-based light-emitting diodes (PNC-LEDs) must be enhanced. Recent material research results have shed light on the leading cause of performance decline in PNC-LEDs, which is ionic migration linked to surface defects and grain boundary imperfections. This review aims to present recent advancements in the modification strategies of PNCs, focusing on obtaining high-quality PNCs for LEDs. The PNC modification strategies are first summarized, including crystal structure regulation, nanocrystal size tuning, ligand exchange, and surface passivation. Then, the effects of these material design aspects on LED device performances, such as efficiency, brightness, and stability, are presented. Based on the efficient modification strategies, we propose promising material design insights for efficient and stable PNC-LEDs.
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Affiliation(s)
- Sami Ur Rahman
- Hefei National Research Centre for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yong-Hui Song
- Hefei National Research Centre for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- School of Materials Science and Engineering, Anhui University, Hefei, Anhui 230601, China
| | - Hong-Bin Yao
- Hefei National Research Centre for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
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6
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Li LY, Song YH, Yang JN, Ru XC, Yin YC, Yao HB. Short-branched alkyl sulfobetaine-passivated CsPbBr 3 nanocrystals for efficient green light emitting diodes. NANOSCALE 2024; 16:7387-7395. [PMID: 38545886 DOI: 10.1039/d4nr00965g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Inorganic cesium lead bromide nanocrystals (CsPbBr3 NCs) hold promising prospects for high performance green light-emitting diodes (LEDs) due to their exceptional color purity and high luminescence efficiency. However, the common ligands employed for passivating these indispensable NCs, such as long-chain organic ligands like oleic acid and oleylamine (OA/OAm), display highly dynamic binding and electronic insulating issues, thereby resulting in a low efficiency of the as-fabricated LEDs. Herein, we report a new zwitterionic short-branched alkyl sulfobetaine ligand, namely trioctyl(propyl-3-sulfonate) ammonium betaine (TOAB), to in situ passivate CsPbBr3 NCs via a feasible one-step solution synthesis, enabling efficiency improvement of CsPbBr3 NC-based LEDs. The zwitterionic TOAB ligand not only strengthened the surface passivation of CsPbBr3 NCs with a high photoluminescence quantum yield (PLQY) of 97%, but also enhanced the carrier transport in the fabricated CsPbBr3 NC thin films due to the short-branched alkyl design. Consequently, CsPbBr3 NCs passivated with TOAB achieved a green LED with an external quantum efficiency (EQE) of 7.3% and a maximum luminance of 5716 cd m-2, surpassing those of LEDs based on insulating long-chain ligand-passivated NCs. Our work provides an effective surface passivation ligand design to enhance the performance of CsPbBr3 NC-based LEDs.
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Affiliation(s)
- Lian-Yue Li
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yong-Hui Song
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jun-Nan Yang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xue-Chen Ru
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Chen Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hong-Bin Yao
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
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Zhou X, Yang M, Shen C, Lian L, Hou L, Zhang J. Synchronously Polishing the Lead-Rich Surface and Passivating Surface Defects of CsPb(Br/I) 3 Quantum Dots for High-Performance Pure-Red PeLEDs. NANO LETTERS 2024; 24:3719-3726. [PMID: 38484387 DOI: 10.1021/acs.nanolett.4c00220] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Mixed-halide CsPb(Br/I)3 perovskite quantum dots (QDs) are regarded as one of the most promising candidates for pure-red perovskite light-emitting diodes (PeLEDs) due to their precise spectral tuning property. However, the lead-rich surface of these QDs usually results in halide ion migration and nonradiative recombination loss, which remains a great challenge for high-performance PeLEDs. To solve the above issues, we employ a chelating agent of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid hydrate (DOTA) to polish the lead-rich surface of the QDs and meanwhile introduce a new ligand of 2,3-dimercaptosuccinic acid (DMSA) to passivate surface defects of the QDs. This synchronous post-treatment strategy results in high-quality CsPb(Br/I)3 QDs with suppressed halide ion migration and an improved photoluminescence quantum yield, which enables us to fabricate spectrally stable pure-red PeLEDs with a peak external quantum efficiency of 23.2%, representing one of the best performance pure-red PeLEDs based on mixed-halide CsPb(Br/I)3 QDs reported to date.
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Affiliation(s)
- Xin Zhou
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
- Guangdong Provincial Key Laboratory of Semiconductor Micro Display, Foshan Nationstar Optoelectronics Company Ltd., Foshan 528000, China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Chao Shen
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
| | - Linyuan Lian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lintao Hou
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
| | - Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Li Y, Cui Z, Shi L, Shan J, Zhang W, Wang Y, Ji Y, Zhang D, Wang J. Perovskite Nanocrystals: Superior Luminogens for Food Quality Detection Analysis. JOURNAL OF AGRICULTURAL AND FOOD CHEMISTRY 2024; 72:4493-4517. [PMID: 38382051 DOI: 10.1021/acs.jafc.3c06660] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
With the global limited food resources receiving grievous damage from frequent climate changes and ascending global food demand resulting from increasing population growth, perovskite nanocrystals with distinctive photoelectric properties have emerged as attractive and prospective luminogens for the exploitation of rapid, easy operation, low cost, highly accurate, excellently sensitive, and good selective biosensors to detect foodborne hazards in food practices. Perovskite nanocrystals have demonstrated supreme advantages in luminescent biosensing for food products due to their high photoluminescence (PL) quantum yield, narrow full width at half-maximum PL, tunable PL in the entire visible spectrum, easy preparation, and various modification strategies compared with conventional semiconductors. Herein, we have carried out a comprehensive discussion concerning perovskite nanocrystals as luminogens in the application of high-performance biosensing of foodborne hazards for food products, including a brief introduction of perovskite nanocrystals, perovskite nanocrystal-based biosensors, and their application in different categories of food products. Finally, the challenges and opportunities faced by perovskite nanocrystals as superior luminogens were proposed to promote their practicality in the future food supply.
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Affiliation(s)
- Yuechun Li
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
| | - Zhaowen Cui
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
| | - Longhua Shi
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
| | - Jinrui Shan
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
| | - Wentao Zhang
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
| | - Yanru Wang
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
| | - Yanwei Ji
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
| | - Daohong Zhang
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
| | - Jianlong Wang
- College of Food Science and Engineering, Northwest A&F University, 22 Xinong Road, Yangling 712100, Shaanxi, China
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9
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Yuan T, Song X, Shi Y, Wei S, Han Y, Yang L, Zhang Y, Li X, Li Y, Shen L, Fan L. Perspectives on development of optoelectronic materials in artificial intelligence age. Chem Asian J 2024:e202301088. [PMID: 38317532 DOI: 10.1002/asia.202301088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Revised: 01/28/2024] [Accepted: 02/05/2024] [Indexed: 02/07/2024]
Abstract
Optoelectronic devices, such as light-emitting diodes, have been demonstrated as one of the most demanded forthcoming display and lighting technologies because of their low cost, low power consumption, high brightness, and high contrast. The improvement of device performance relies on advances in precisely designing novelty functional materials, including light-emitting materials, hosts, hole/electron transport materials, and yet which is a time-consuming, laborious and resource-intensive task. Recently, machine learning (ML) has shown great prospects to accelerate material discovery and property enhancement. This review will summarize the workflow of ML in optoelectronic materials discovery, including data collection, feature engineering, model selection, model evaluation and model application. We highlight multiple recent applications of machine-learned potentials in various optoelectronic functional materials, ranging from semiconductor quantum dots (QDs) or perovskite QDs, organic molecules to carbon-based nanomaterials. We furthermore discuss the current challenges to fully realize the potential of ML-assisted materials design for optoelectronics applications. It is anticipated that this review will provide critical insights to inspire new exciting discoveries on ML-guided of high-performance optoelectronic devices with a combined effort from different disciplines.
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Affiliation(s)
- Ting Yuan
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Xianzhi Song
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Yuxin Shi
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Shuyan Wei
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Yuyi Han
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Linjuan Yang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Yang Zhang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Xiaohong Li
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Yunchao Li
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Lin Shen
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Louzhen Fan
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
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