Nanoscale thermometry by scanning thermal microscopy

Nanoscale Imaging and Measurements of Grain Boundary Thermal Resistance in Ceramics with Scanning Thermal Wave Microscopy

Material thermal conductivity is a key factor in various applications, from thermal management to energy harvesting. With microstructure engineering being a widely used method for customizing material properties, including thermal properties, understanding and controlling the role of extended phonon-scattering defects, like grain boundaries, is crucial for efficient material design. However, systematic studies are still lacking primarily due to limited tools. In this study, we demonstrate an approach for measuring grain boundary thermal resistance by probing the propagation of thermal waves across grain boundaries with a temperature-sensitive scanning probe. The method, implemented with a spatial resolution of about 100 nm on finely grained Nb-substituted SrTiO3 ceramics, achieves a detectability of about 2 × 10-8 K m2 W-1, suitable for chalcogenide-based thermoelectrics. The measurements indicated that the thermal resistance of the majority of grain boundaries in the STiO3 ceramics is below this value. While there are challenges in improving sensitivity, considering spatial resolution and the amount of material involved in the detection, the sensitivity of the scanning probe method is comparable to that of optical thermoreflectance techniques, and the method opens up an avenue to characterize thermal resistance at the level of single grain boundaries and domain walls in a spectrum of microstructured materials.

Nanoscale thermal imaging of hot electrons by cryogenic terahertz scanning noise microscopy

Nanoscale thermal imaging and temperature detection are of fundamental importance in diverse scientific and technological realms. Most nanoscale thermometry techniques focus on probing the temperature of lattice or phonons and are insensitive to nonequilibrium electrons, commonly referred to as "hot electrons." While terahertz scanning noise microscopy (SNoiM) has been demonstrated to be powerful in the thermal imaging of hot electrons, prior studies have been limited to room temperature. In this work, we report the development of a cryogenic SNoiM (Cryo-SNoiM) tailored for quantitative hot electron temperature detection at low temperatures. The microscope features a special two-chamber design where the sensitive terahertz detector, housed in a vacuum chamber, is efficiently cooled to ∼5 K using a pulse tube cryocooler. In a separate chamber, the atomic force microscope and the sample can be maintained at room temperature under ambient/vacuum conditions or cooled to ∼110 K via liquid nitrogen. This unique dual-chamber cooling system design enhances the efficacy of SNoiM measurements at low temperatures. It not only facilitates the pre-selection of tips at room temperature before cooling but also enables the quantitative derivation of local electron temperature without reliance on any adjustable parameters. The performance of Cryo-SNoiM is demonstrated through imaging the distribution of hot electrons in a cold, self-heated narrow metal wire. This instrumental innovation holds great promise for applications in imaging low-temperature hot electron dynamics and nonequilibrium transport phenomena across various material systems.

Experimental setup for thermal measurements at the nanoscale using a SThM probe with niobium nitride thermometer

Scanning Thermal Microscopy (SThM) has become an important measurement technique for characterizing the thermal properties of materials at the nanometer scale. This technique requires a SThM probe that combines an Atomic Force Microscopy (AFM) probe and a very sensitive resistive thermometer; the thermometer being located at the apex of the probe tip allows for the mapping of temperature or thermal properties of nanostructured materials with very high spatial resolution. The high interest of the SThM technique in the field of thermal nanoscience currently suffers from a low temperature sensitivity despite its high spatial resolution. To address this challenge, we developed a high vacuum-based AFM system hosting a highly sensitive niobium nitride (NbN) SThM probe to demonstrate its unique performance. As a proof of concept, we utilized this custom-built system to carry out thermal measurements using the 3ω method. By measuring the V3ω voltage on the NbN resistive thermometer under vacuum conditions, we were able to determine the SThM probe's thermal conductance and thermal time constant. The performance of the probe is demonstrated by performing thermal measurements in-contact with a sapphire sample.

Preparation of multilayer samples for scanning thermal microscopy examination

Thin film multilayer materials are very important for a variety of key technologies such as hard drive storage. However, their multilayered nature means it can be difficult to examine them after production and determining properties of individual layers is harder still. Here, methods of preparing multilayer samples for examination using scanning thermal microscopy are compared, showing that both a combination of mechanical and ion beam polishing, and ion beam milling to form a crater produce suitable surfaces for scanning thermal microscopy examination. However, the larger exposed surfaces of the ion beam milled crater are the most promising for distinguishing between the layers and comparison of their thermal transport properties.

Nanoscale thermometry under ambient conditions via scanning thermal microscopy with 3D scanning differential method

Local temperature measurement with high resolution and accuracy is a key challenge in nowadays science and technologies at nanoscale. Quantitative characterization on temperature with sub-100 nm resolution is of significance for understanding the physical mechanisms of phonon transport and energy dissipation in nanoelectronics, optoelectronics, and thermoelectric devices. Scanning thermal microscopy (SThM) has been proved to be a versatile method for nanoscale thermometry. In particular, 2D profiling of the temperature field on the order of 10 nm and 10 mK has already been achieved by SThM with modulation techniques in ultrahigh vacuum to exclude the parasitic heat flow between air and the cantilever. However, few attempts have been made to truly realize 2D profiling of temperature quantitatively under ambient conditions, which is more relevant to realistic applications. Here, a 3D scanning differential method is developed to map the 2D temperature field of an operating nanodevice under ambient environment. Our method suppresses the thermal drift and the parasitic heat flow between air and the cantilever by consecutively measuring the temperatures in thermal contact and nonthermal contact scenarios rather than in a double-scan manner. The local 2D temperature field of a self-heating metal line with current crowding by a narrowing channel is mapped quantitatively by a sectional calibration with a statistic null-point method and a pixel-by-pixel correction with iterative calculation. Furthermore, we propose a figure of merit to evaluate the performance of thermocouple probes on temperature field profiling. The development of nanoscale thermometry under ambient environment would facilitate thermal manipulation on nanomaterials and nanodevices under practical conditions.

Waveguide coupled III-V photodiodes monolithically integrated on Si

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In_0.5Ga_0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm² at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f_3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.

Quantitative Mapping of Unmodulated Temperature Fields with Nanometer Resolution

Quantitative mapping of temperature fields with nanometric resolution is critical in various areas of scientific research and emerging technology, such as nanoelectronics, surface chemistry, plasmonic devices, and quantum systems. A key challenge in achieving quantitative thermal imaging with scanning thermal microscopy (SThM) is the lack of knowledge of the tip-sample thermal resistance (R_TS), which varies with local topography and is critical for quantifying the sample temperature. Recent advances in SThM have enabled simultaneous quantification of R_TS and topography in situations where the temperature field is modulated enabling quantitative thermometry even when topographical features cause significant variations in R_TS. However, such an approach is not applicable to situations where the temperature modulation of the device is not readily possible. Here we show, using custom-fabricated scanning thermal probes (STPs) with a sharp tip (radius ∼25 nm) and an integrated heater/thermometer, that one can quantitatively map unmodulated temperature fields, in a single scan, with ∼7 nm spatial resolution and ∼50 mK temperature resolution in a bandwidth of 1 Hz. This is accomplished by introducing a modulated heat input to the STP and measuring the AC and DC responses of the probe's temperature which allow for simultaneous mapping of the tip-sample thermal resistance and sample surface temperature. The approach presented here─contact resistance resolved scanning thermal microscopy (CR-SThM)─can greatly facilitate temperature mapping of a variety of microdevices under practical operating conditions.

Photothermal Chemistry Based on Solar Energy: From Synergistic Effects to Practical Applications

With the development of society, energy shortage and environmental problems have become more and more outstanding. Solar energy is a clean and sustainable energy resource, potentially driving energy conversion and environmental remediation reactions. Thus, solar-driven chemistry is an attractive way to solve the two problems. Photothermal chemistry (PTC) is developed to achieve full-spectral utilization of the solar radiation and drive chemical reactions more efficiently under relatively mild conditions. In this review, the mechanisms of PTC are summarized from the aspects of thermal and non-thermal effects, and then the interaction and synergy between these two effects are sorted out. In this paper, distinguishing and quantifying these two effects is discussed to understand PTC processes better and to design PTC catalysts more methodically. However, PTC is still a little far away from practical. Herein, several key points, which must be considered when pushing ahead with the engineering application of PTC, are proposed, along with some workable suggestions on the practical application. This review provides a unique perspective on PTC, focusing on the synergistic effects and pointing out a possible direction for practical application.

Scanning Thermal Microscopy and Ballistic Phonon Transport in Lateral Spin Valves

Using scanning thermal microscopy, we have mapped the spatial distribution of temperatures in an operating nanoscale device formed from a magnetic injector, an Ag connecting wire, and a magnetic detector. An analytical model explained the thermal diffusion over the measured temperature range (2-300 K) and injector-detector separation (400-3000 nm). The characteristic diffusion lengths of the Peltier and Joule heat differ remarkably below 60 K, a fact that can be explained by the onset of ballistic phonon heat transfer in the substrate.

Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review

Heat dissipation and thermal management are central challenges in various areas of science and technology and are critical issues for the majority of nanoelectronic devices. In this review, we focus on experimental advances in thermal characterization and phonon engineering that have drastically increased the understanding of heat transport and demonstrated efficient ways to control heat propagation in nanomaterials. We summarize the latest device-relevant methodologies of phonon engineering in semiconductor nanostructures and 2D materials, including graphene and transition metal dichalcogenides. Then, we review recent advances in thermal characterization techniques, and discuss their main challenges and limitations.

Negative entropy production rates in Drude-Sommerfeld metals

It is commonly accepted that in typical situations the rate of entropy production is non-negative. We show that this assertion is not entirely correct, not even in the linear regime, if a time-dependent, external perturbation is not compensated by a rapid enough decay of the response function. This is demonstrated for three variants of the Drude model to describe electrical conduction in noble metals, namely the classical free electron gas, the Drude-Sommerfeld model, and the extended Drude-Sommerfeld model. The analysis is concluded with a discussion of potential experimental verifications and ramifications of negative entropy production rates.

Spatially resolved thermoelectric effects in operando semiconductor-metal nanowire heterostructures

The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168 nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al2O3 shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical current, for both Joule and Peltier effects. An analysis is developed that is able to extract the thermal and thermoelectric properties including thermal conductivity, the thermal boundary resistance to the substrate and the Peltier coefficient from a single measurement. Our investigations demonstrate the potential of quantitative measurements of temperature around self-heated devices and structures down to the scattering length of heat carriers.

Far-field thermal imaging below diffraction limit

Non-uniform self-heating and temperature hotspots are major concerns compromising the performance and reliability of submicron electronic and optoelectronic devices. At deep submicron scales where effects such as contact-related artifacts and diffraction limits accurate measurements of temperature hotspots, non-contact thermal characterization can be extremely valuable. In this work, we use a Bayesian optimization framework with generalized Gaussian Markov random field (GGMRF) prior model to obtain accurate full-field temperature distribution of self-heated metal interconnects from their thermoreflectance thermal images (TRI) with spatial resolution 2.5 times below Rayleigh limit for 530nm illumination. Finite element simulations along with TRI experimental data were used to characterize the point spread function of the optical imaging system. In addition, unlike iterative reconstruction algorithms that use ad hoc regularization parameters in their prior models to obtain the best quality image, we used numerical experiments and finite element modeling to estimate the regularization parameter for solving a real experimental inverse problem.

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

As electronic devices are downsized, physical processes at the interface to electrodes may dominate and limit device performance. A crucial step towards device optimization is being able to separate such contact effects from intrinsic device properties. Likewise, an increased local temperature due to Joule heating at contacts and the formation of hot spots may put limits on device integration. Therefore, being able to observe profiles of both electronic and thermal device properties at the nanoscale is important. Here, we show measurements by scanning thermal and Kelvin probe force microscopy of the same 60 nm diameter indium arsenide nanowire in operation. The observed temperature along the wire is substantially elevated near the contacts and deviates from the bell-shaped temperature profile one would expect from homogeneous heating. Voltage profiles acquired by Kelvin probe force microscopy not only allow us to determine the electrical nanowire conductivity, but also to identify and quantify sizable and non-linear contact resistances at the buried nanowire-electrode interfaces. Complementing these data with thermal measurements, we obtain a device model further permitting separate extraction of the local thermal nanowire and interface conductivities.