1
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Mahlouji R, Zhang Y, Verheijen MA, Karwal S, Hofmann JP, Kessels WMM, Bol AA. Influence of High-κ Dielectrics Integration on ALD-Based MoS 2 Field-Effect Transistor Performance. ACS APPLIED NANO MATERIALS 2024; 7:18786-18800. [PMID: 39206351 PMCID: PMC11348321 DOI: 10.1021/acsanm.4c02214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 07/21/2024] [Accepted: 07/30/2024] [Indexed: 09/04/2024]
Abstract
The integration of high-κ dielectrics on MoS2 field-effect transistors (FETs) is essential for the realization of MoS2 in ultrascaled nanoelectronic devices and circuits. Most studies covering this topic are based on exfoliated MoS2 flakes or chemical vapor deposition (CVD) grown MoS2 films, whereas other techniques, such as atomic layer deposition (ALD), are also gaining attention for the growth of MoS2 in recent years. In this work, we grow large-area MoS2 by means of plasma-enhanced (PE-)ALD and evaluate the influence of high-κ dielectrics on the properties of ALD-based MoS2 FETs through electrical characterization combined with surface-chemical and high-resolution scanning transmission electron microscopy (HR-STEM) analyses. We grow HfO x , AlO x , or both by means of PE-ALD or thermal ALD on our fabricated devices and show that, in addition to the dielectric constant, three other major parameters related to the processing of the dielectrics can simultaneously affect the MoS2 FET electrical characteristics and govern its doping. These parameters are the stoichiometry of the dielectric, its carbon impurity content, and the degree to which the MoS2 surface oxidizes upon the dielectric growth. When grown at 100 °C, our HfO x films are oxygen-vacant whereas our AlO x films are oxygen-rich. In addition, carbon impurities are incorporated into the dielectrics at low deposition temperatures, being one of the likely causes of the MoS2 FET overall n-type performance in all of the studied cases. Our investigations also reveal that PE-ALD of HfO x or AlO x oxidizes the MoS2 surface, whereas thermal ALD AlO x leaves MoS2 almost intact. In this respect, if thermal ALD AlO x of proper thickness is grown between MoS2 and HfO x , it can reduce the degree to which the MoS2 surface oxidizes by HfO x and meanwhile improve the total dielectric constant, altogether leading to the most optimal electrical performance in ALD-based MoS2 FETs.
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Affiliation(s)
- Reyhaneh Mahlouji
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Yue Zhang
- Laboratory
of Inorganic Materials and Catalysis, Department of Chemical Engineering
and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Marcel A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Eurofins
Materials Science, High
Tech Campus 11, 5656 AE Eindhoven, The Netherlands
| | - Saurabh Karwal
- Netherlands
Organization for Applied Scientific Research (TNO), 2628 CK Delft, The Netherlands
| | - Jan P. Hofmann
- Laboratory
of Inorganic Materials and Catalysis, Department of Chemical Engineering
and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Surface
Science Laboratory, Department of Materials and Earth Sciences, Technical University of Darmstadt, Otto-Berndt-Strasse 3, 64287 Darmstadt, Germany
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Ageeth A. Bol
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Department
of Chemistry, University of Michigan, 930 N. University Ave., Ann Arbor, Michigan 48109, United States
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2
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Gao H, Wang Z, Cao J, Lin YC, Ling X. Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials. ACS NANO 2024; 18:16343-16358. [PMID: 38899467 DOI: 10.1021/acsnano.4c01177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.
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Affiliation(s)
- Hongze Gao
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Zifan Wang
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Jun Cao
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Yuxuan Cosmi Lin
- Department of Materials Science and Engineering, Texas A&M University 575 Ross Street, College Station, Texas 77843, United States
| | - Xi Ling
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
- Division of Materials Science and Engineering, Boston University 15 St Mary's Street, Boston, Massachusetts 02215, United States
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3
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Park J, Kwak SJ, Kang S, Oh S, Shin B, Noh G, Kim TS, Kim C, Park H, Oh SH, Kang W, Hur N, Chai HJ, Kang M, Kwon S, Lee J, Lee Y, Moon E, Shi C, Lou J, Lee WB, Kwak JY, Yang H, Chung TM, Eom T, Suh J, Han Y, Jeong HY, Kim Y, Kang K. Area-selective atomic layer deposition on 2D monolayer lateral superlattices. Nat Commun 2024; 15:2138. [PMID: 38459015 PMCID: PMC10924103 DOI: 10.1038/s41467-024-46293-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Accepted: 02/22/2024] [Indexed: 03/10/2024] Open
Abstract
The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including Al2O3, HfO2, Ru, Te, and Sb2Se3.
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Affiliation(s)
- Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Seung Jae Kwak
- School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University (SNU), Seoul, Republic of Korea
| | - Sumin Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Bongki Shin
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, Republic of Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Changhwan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Hyeonbin Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Seung Hoon Oh
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Woojin Kang
- School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University (SNU), Seoul, Republic of Korea
| | - Namwook Hur
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Seongdae Kwon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Jaehyun Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Yongjoon Lee
- Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Eoram Moon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Jun Lou
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Won Bo Lee
- School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University (SNU), Seoul, Republic of Korea
| | - Joon Young Kwak
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul, Republic of Korea
| | - Heejun Yang
- Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Taek-Mo Chung
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Taeyong Eom
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Joonki Suh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - YongJoo Kim
- Department of Materials Science and Engineering, Korea University, Seoul, Republic of Korea.
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
- Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
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4
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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5
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Moody MJ, Paul JT, Smeets PJM, Dos Reis R, Kim JS, Mead CE, Gish JT, Hersam MC, Chan MKY, Lauhon LJ. van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56150-56157. [PMID: 38011316 DOI: 10.1021/acsami.3c11931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS(100) and hBN{11̅0} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.
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Affiliation(s)
- Michael J Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Joshua T Paul
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute of Science and Engineering, Evanston, Illinois 60208, United States
| | - Paul J M Smeets
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Roberto Dos Reis
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Joon-Seok Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Christopher E Mead
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Jonathan Tyler Gish
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Medicine, Northwestern University, Evanston, Illinois 60208, United States
- The Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Maria K Y Chan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute of Science and Engineering, Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- The Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
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6
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Oh IK, Kim WH, Zeng L, Singh J, Bae D, Mackus AJM, Song JG, Seo S, Shong B, Kim H, Bent SF. Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS 2 by Atomic Layer Deposition. ACS NANO 2020; 14:1757-1769. [PMID: 31967453 DOI: 10.1021/acsnano.9b07467] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We introduce the synthesis of hybrid nanostructures comprised of ZnO nanocrystals (NCs) decorating nanosheets and nanowires (NWs) of MoS2 prepared by atomic layer deposition (ALD). The concentration, size, and surface-to-volume ratio of the ZnO NCs can be systematically engineered by controlling both the number of ZnO ALD cycles and the properties of the MoS2 substrates, which are prepared by sulfurizing ALD MoO3. Analysis of the chemical composition combined with electron microscopy and synchrotron X-ray techniques as a function of the number of ZnO ALD cycles, together with the results of quantum chemical calculations, help elucidate the ZnO growth mechanism and its dependence on the properties of the MoS2 substrate. The defect density and grain size of MoS2 nanosheets are controlled by the sulfurization temperature of ALD MoO3, and the ZnO NCs in turn nucleate selectively at defect sites on MoS2 surface and enlarge with increasing ALD cycle numbers. At higher ALD cycle numbers, the coalescence of ZnO NCs contributes to an increase in areal coverage and NC size. Additionally, the geometry of the hybrid structures can be tuned by changing the dimensionality of the MoS2, by employing vertical NWs of MoS2 as the substrate for ALD ZnO NCs, which leads to improvement of the relevant surface-to-volume ratio. Such materials are expected to find use in newly expanded applications, especially those such as sensors or photodevices based on a p-n heterojunction which relies on coupling transition-metal dichalcogenides with NCs.
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Affiliation(s)
- Il-Kwon Oh
- Department of Chemical Engineering , Stanford University , Stanford , California 94305 , United States
- School of Electrical and Electronic Engineering , Yonsei University , Seoul 03722 , Korea
| | - Woo-Hee Kim
- Department of Chemical Engineering , Stanford University , Stanford , California 94305 , United States
- Department of Materials Science and Chemical Engineering , Hanyang University , Ansan 15588 , Korea
| | - Li Zeng
- Department of Chemical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Joseph Singh
- Department of Chemistry , Stanford University , Stanford , California 94305 , United States
| | - Dowon Bae
- Materials for Energy Conversion and Storage (MECS), Department of Chemical Engineering , Delft University of Technology , Delft 2600AA , The Netherlands
| | - Adriaan J M Mackus
- Department of Chemical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Jeong-Gyu Song
- School of Electrical and Electronic Engineering , Yonsei University , Seoul 03722 , Korea
| | - Seunggi Seo
- School of Electrical and Electronic Engineering , Yonsei University , Seoul 03722 , Korea
| | - Bonggeun Shong
- Department of Chemical Engineering , Hongik University , Seoul 04066 , Korea
| | - Hyungjun Kim
- School of Electrical and Electronic Engineering , Yonsei University , Seoul 03722 , Korea
| | - Stacey F Bent
- Department of Chemical Engineering , Stanford University , Stanford , California 94305 , United States
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7
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Balasubramanyam S, Bloodgood MA, van Ommeren M, Faraz T, Vandalon V, Kessels WMM, Verheijen MA, Bol AA. Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS 2 Layers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:3873-3885. [PMID: 31880425 PMCID: PMC6978813 DOI: 10.1021/acsami.9b19716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2019] [Accepted: 12/27/2019] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) such as WS2 are promising materials for nanoelectronic applications. However, growth of the desired horizontal basal-plane oriented 2D TMD layers is often accompanied by the growth of vertical nanostructures that can hinder charge transport and, consequently, hamper device application. In this work, we discuss both the formation and suppression of vertical nanostructures during plasma-enhanced atomic layer deposition (PEALD) of WS2. Using scanning transmission electron microscopy studies, formation pathways of vertical nanostructures are established for a two-step (AB-type) PEALD process. Grain boundaries are identified as the principal formation centers of vertical nanostructures. Based on the obtained insights, we introduce an approach to suppress the growth of vertical nanostructures, wherein an additional step (C)-a chemically inert Ar plasma or a reactive H2 plasma-is added to the original two-step (AB-type) PEALD process. This approach reduces the vertical nanostructure density by 80%. It was confirmed that suppression of vertical nanostructures goes hand in hand with grain size enhancement. The vertical nanostructure density reduction consequently lowers film resistivity by an order of magnitude. Insights obtained in this work can contribute toward devising additional pathways, besides plasma treatments, for suppressing the growth of vertical nanostructures and improving the material properties of 2D TMDs that are relevant for nanoelectronic device applications.
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Affiliation(s)
- Shashank Balasubramanyam
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Matthew A. Bloodgood
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Mark van Ommeren
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Tahsin Faraz
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Vincent Vandalon
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Marcel A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
- Eurofins
Materials Science Netherlands B.V., High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
| | - Ageeth A. Bol
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
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8
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Leonhardt A, Chiappe D, Afanas'ev VV, El Kazzi S, Shlyakhov I, Conard T, Franquet A, Huyghebaert C, de Gendt S. Material-Selective Doping of 2D TMDC through Al xO y Encapsulation. ACS APPLIED MATERIALS & INTERFACES 2019; 11:42697-42707. [PMID: 31625717 DOI: 10.1021/acsami.9b11550] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with high-performance electronic systems, one of the greatest challenges is the realization of doping and comprehension of its mechanisms. Low-temperature atomic layer deposition of aluminum oxide is found to n-dope MoS2 and ReS2 but not WS2. Based on electrical, optical, and chemical analyses, we propose and validate a hypothesis to explain the doping mechanism. Doping is ascribed to donor states in the band gap of AlxOy, which donate electrons or not, based on the alignment of the electronic bands of the 2D TMDC. Through systematic experimental characterization, incorporation of impurities (e.g., carbon) is identified as the likely cause of such states. By modulating the carbon concentration in the capping oxide, doping can be controlled. Through systematic and comprehensive experimental analysis, this study correlates, for the first time, 2D TMDC doping to the carbon incorporation on dielectric encapsulation layers. We highlight the possibility to engineer dopant layers to control the material selectivity and doping concentration in 2D TMDC.
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Affiliation(s)
- Alessandra Leonhardt
- Department of Chemistry , K.U. Leuven , Celestijnenlaan 200 F , B-3001 Leuven , Belgium
- Imec , Kapeldreef 75 , 3001 Leuven , Belgium
| | | | - Valeri V Afanas'ev
- Department of Physics and Astronomy , K.U. Leuven , Celestijnenlaan 200 D , B-3001 Leuven , Belgium
| | | | - Ilya Shlyakhov
- Department of Physics and Astronomy , K.U. Leuven , Celestijnenlaan 200 D , B-3001 Leuven , Belgium
| | | | | | | | - Stefan de Gendt
- Department of Chemistry , K.U. Leuven , Celestijnenlaan 200 F , B-3001 Leuven , Belgium
- Imec , Kapeldreef 75 , 3001 Leuven , Belgium
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9
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Groven B, Claes D, Nalin Mehta A, Bender H, Vandervorst W, Heyns M, Caymax M, Radu I, Delabie A. Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature. J Chem Phys 2019; 150:104703. [PMID: 30876349 DOI: 10.1063/1.5048346] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- B. Groven
- Department of Chemistry, KU Leuven (University of Leuven), Leuven 3001, Belgium
- imec, Kapeldreef 75, 3001 Leuven, Belgium
| | - D. Claes
- Department of Chemistry, KU Leuven (University of Leuven), Leuven 3001, Belgium
- imec, Kapeldreef 75, 3001 Leuven, Belgium
| | - A. Nalin Mehta
- imec, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Physics, KU Leuven (University of Leuven), Leuven 3001, Belgium
| | - H. Bender
- imec, Kapeldreef 75, 3001 Leuven, Belgium
| | - W. Vandervorst
- imec, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Physics, KU Leuven (University of Leuven), Leuven 3001, Belgium
| | - M. Heyns
- imec, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Materials Engineering, KU Leuven (University of Leuven), Leuven 3001, Belgium
| | - M. Caymax
- imec, Kapeldreef 75, 3001 Leuven, Belgium
| | - I. Radu
- imec, Kapeldreef 75, 3001 Leuven, Belgium
| | - A. Delabie
- Department of Chemistry, KU Leuven (University of Leuven), Leuven 3001, Belgium
- imec, Kapeldreef 75, 3001 Leuven, Belgium
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Zheng X, Wei Y, Deng C, Huang H, Yu Y, Wang G, Peng G, Zhu Z, Zhang Y, Jiang T, Qin S, Zhang R, Zhang X. Controlled Layer-by-Layer Oxidation of MoTe 2 via O 3 Exposure. ACS APPLIED MATERIALS & INTERFACES 2018; 10:30045-30050. [PMID: 30146869 DOI: 10.1021/acsami.8b11003] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe2 flakes via ozone (O3) exposure. The thickness of MoO x oxide film could be tuning with atomic-level accuracy simply by varying O3 exposure time. Additionally, MoO x-covered MoTe2 shows a hole-dominated transport behavior. Our findings point to a simple and effective strategy for growing homogeneous surface oxide film on MoTe2, which is promising for several purposes in metal-oxide-semiconductor transistor, ranging from surface passivation to dielectric layers.
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Affiliation(s)
- Xiaoming Zheng
- College of Arts and Science , National University of Defense Technology , Changsha , Hunan 410073 , China
- School of Physics and Electronics , Central South University , Changsha , Hunan 410004 , China
| | - Yuehua Wei
- Academy of Advanced Studies in Interdisciplinary Research , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Chuyun Deng
- College of Arts and Science , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Han Huang
- School of Physics and Electronics , Central South University , Changsha , Hunan 410004 , China
| | - Yayun Yu
- College of Arts and Science , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Guang Wang
- College of Arts and Science , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Gang Peng
- College of Arts and Science , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Zhihong Zhu
- Academy of Advanced Studies in Interdisciplinary Research , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Yi Zhang
- College of Arts and Science , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Tian Jiang
- Academy of Advanced Studies in Interdisciplinary Research , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Shiqiao Qin
- Academy of Advanced Studies in Interdisciplinary Research , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Renyan Zhang
- Academy of Advanced Studies in Interdisciplinary Research , National University of Defense Technology , Changsha , Hunan 410073 , China
| | - Xueao Zhang
- College of Arts and Science , National University of Defense Technology , Changsha , Hunan 410073 , China
- School of Physics and Electronics , Central South University , Changsha , Hunan 410004 , China
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Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor. CRYSTALS 2018. [DOI: 10.3390/cryst8080316] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.
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Liu H, Zhang J, Gou J, Sun Y. Preparation of Fe 2 O 3 /Al composite powders by homogeneous precipitation method. ADV POWDER TECHNOL 2017. [DOI: 10.1016/j.apt.2017.10.005] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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