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Medel Ruiz CI, Chiu R, Casillas Rodríguez FJ, Sevilla Escoboza JR, Molina Contreras JR, Frausto Reyes C. Effect of Nanoscale Surface Roughness and Electron-Phonon Interaction on Vibrational Modes of Cadmium Telluride Using Resonant Raman Spectroscopy. APPLIED SPECTROSCOPY 2024:37028241267938. [PMID: 39094005 DOI: 10.1177/00037028241267938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
This study investigates the combined effects of nanoscale surface roughness and electron-phonon interaction on the vibrational modes of cadmium telluride (CdTe) using resonant Raman spectroscopy. Raman spectra simulations aided in identifying the active phonon modes and their dependence on roughness. Our results reveal that increasing surface roughness leads to an asymmetric line shape in the first-order longitudinal optical (1LO) phonon mode, attributed to an increase in the electron-phonon interaction. This asymmetry broadens the entire Raman spectrum. Conversely, the overtone (second-order longitudinal optical [2LO]) mode exhibits a symmetrical line shape that intensifies with roughness. Additionally, we identify and discuss the contributions of surface optical phonon mode and multiphonon modes to the Raman spectra, highlighting their dependence on roughness. This work offers a deeper understanding of how surface roughness and electron-phonon scattering influence the line shape of CdTe resonant Raman spectra, providing valuable insights into its vibrational properties.
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Affiliation(s)
| | - Roger Chiu
- Centro Universitario de los Lagos, Universidad de Guadalajara, Lagos de Moreno, Jalisco, Mexico
| | | | | | - J Rafael Molina Contreras
- Departamento de Ingeniería Eléctrica y Electrónica, Instituto Tecnológico de Aguascalientes, Aguascalientes, Aguascalientes, Mexico
| | - Claudio Frausto Reyes
- Centro de Investigaciones en Óptica AC, Unidad Aguascalientes, Aguascalientes, Mexico
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Kim D, Yang C, Park YD. Towards More Accurate Determination of the Thermoelectric Properties of Bi 2Se 3 Epifilms by Suspension via Nanomachining Techniques. SENSORS (BASEL, SWITZERLAND) 2022; 22:8042. [PMID: 36298391 PMCID: PMC9609336 DOI: 10.3390/s22208042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Revised: 10/12/2022] [Accepted: 10/19/2022] [Indexed: 06/16/2023]
Abstract
We report on the characterization of the thermoelectric properties of Bi2Se3 epifilms. MBE-grown Bi2Se3 films on GaAs (111) A are nanomachined with integrated Pt elements serving as local joule heaters, thermometers, and voltage probes. We suspended a 4 µm × 120 µm Bi2Se3 by nanomachining techniques. Specifically, we selectively etched GaAs buffer/substrate layers by citric acid solution followed by a critical point drying method. We found that the self-heating 3ω method is an appropriate technique for the accurate measurement of the thermal conductivity of suspended Bi2Se3. The measured thermoelectric properties of 200 nm thick Bi2Se3 at room temperature were κ=1.95 W/m K, S=−102.8 μV/K, σ = 75,581 S/m and the figure of merit was ZT=0.12. The study introduces a method to measure thermal conductivity accurately by suspending thin films.
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Affiliation(s)
- Donguk Kim
- Department of Physics & Astronomy, Seoul National University, Seoul 08858, Korea
| | - Chanuk Yang
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju 54896, Korea
| | - Yun Daniel Park
- Department of Physics & Astronomy, Seoul National University, Seoul 08858, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08858, Korea
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Zhou Z, Peng K, Xiao S, Wei Y, Dai Q, Lu X, Wang G, Zhou X. Anomalous Thermoelectric Performance in Asymmetric Dirac Semimetal BaAgBi. J Phys Chem Lett 2022; 13:2291-2298. [PMID: 35244398 DOI: 10.1021/acs.jpclett.2c00379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Multiple-band degeneracy has been widely recognized to be beneficial for high thermoelectric performance. Here, we discover that the p-type Dirac bands with lower degeneracy synergistically produce a higher Seebeck coefficient and electrical conductivity in topological semimetal BaAgBi. The anomalous transport phenomenon intrinsically originated from the asymmetric electronic structures: (i) complete p-type Dirac bands near the Fermi level facilitate high and strong energy-dependent hole relaxation time; (ii) the presence of additional parabolic conduction valleys allows for a large density of states to accept scattered electrons, leading to an enlarged hole-electron relaxation time ratio and, thus, weakened bipolar effect. In combination with the strong lattice anharmonicity, an exceptional p-type average ZT of 0.42 is achieved from 300 to 600 K, which can be dramatically enhanced to 1.38 via breaking the C3v symmetry. This work uncovers the underlying mechanisms governing the abnormal transport behavior in Dirac semimetal BaAgBi and highlights the asymmetric electronic structures as target features to discover/design high-performance thermoelectric materials.
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Affiliation(s)
- Zizhen Zhou
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Kunling Peng
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Shijuan Xiao
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Yiqing Wei
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Qinjin Dai
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Xu Lu
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Guoyu Wang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Science, Chongqing, Sichuan 400714, People's Republic of China
| | - Xiaoyuan Zhou
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
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Chen S, Tao WL, Zhou Y, Zeng ZY, Chen XR, Geng HY. Novel thermoelectric performance of 2D 1T- Se 2Te and SeTe 2with ultralow lattice thermal conductivity but high carrier mobility. NANOTECHNOLOGY 2021; 32:455401. [PMID: 34348253 DOI: 10.1088/1361-6528/ac1a91] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2021] [Accepted: 08/02/2021] [Indexed: 06/13/2023]
Abstract
The design and search for efficient thermoelectric materials that can directly convert waste heat into electricity have been of great interest in recent years since they have practical applications in overcoming the challenges of global warming and the energy crisis. In this work, two new two-dimensional 1T-phase group-VI binary compounds Se2Te and SeTe2with outstanding thermoelectric performances are predicted using first-principles calculations combined with Boltzmann transport theory. The dynamic stability is confirmed based on phonon dispersion. It is found that the spin-orbit coupling effect has a significant impact on the band structure of SeTe2, and induces a transformation from indirect to direct band gap. The electronic and phononic transport properties of the Se2Te and SeTe2monolayer are calculated and discussed. High carrier mobility (up to 3744.321 and 2295.413 cm2V-1S-1for electron and hole, respectively) is exhibited, suggesting great applications in nanoelectronic devices. Furthermore, the maximum thermoelectric figure of meritzTof SeTe2for n-type and p-type is 2.88, 1.99 and 5.94, 3.60 at 300 K and 600 K, respectively, which is larger than that of most reported 2D thermoelectric materials. The surprising thermoelectric properties arise from the ultralow lattice thermal conductivitykl(0.25 and 1.89 W m-1K-1for SeTe2and Se2Te at 300 K), and the origin of ultralow lattice thermal conductivity is revealed. The present results suggest that 1T-phase Se2Te and SeTe2monolayer are promising candidates for thermoelectric applications.
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Affiliation(s)
- ShaoBo Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, People's Republic of China
| | - Wang-Li Tao
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Yu Zhou
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Zhao-Yi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, People's Republic of China
| | - Xiang-Rong Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, People's Republic of China
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Zhu Q, Wang S, Wang X, Suwardi A, Chua MH, Soo XYD, Xu J. Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials. NANO-MICRO LETTERS 2021; 13:119. [PMID: 34138379 PMCID: PMC8093352 DOI: 10.1007/s40820-021-00637-z] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2020] [Accepted: 01/22/2021] [Indexed: 05/02/2023]
Abstract
The recent advancements in thermoelectric materials are largely credited to two factors, namely established physical theories and advanced materials engineering methods. The developments in the physical theories have come a long way from the "phonon glass electron crystal" paradigm to the more recent band convergence and nanostructuring, which consequently results in drastic improvement in the thermoelectric figure of merit value. On the other hand, the progresses in materials fabrication methods and processing technologies have enabled the discovery of new physical mechanisms, hence further facilitating the emergence of high-performance thermoelectric materials. In recent years, many comprehensive review articles are focused on various aspects of thermoelectrics ranging from thermoelectric materials, physical mechanisms and materials process techniques in particular with emphasis on solid state reactions. While bottom-up approaches to obtain thermoelectric materials have widely been employed in thermoelectrics, comprehensive reviews on summarizing such methods are still rare. In this review, we will outline a variety of bottom-up strategies for preparing high-performance thermoelectric materials. In addition, state-of-art, challenges and future opportunities in this domain will be commented.
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Affiliation(s)
- Qiang Zhu
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Suxi Wang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Xizu Wang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Ady Suwardi
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Ming Hui Chua
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Xiang Yun Debbie Soo
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore.
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
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Pham ATT, Vo PTN, Ta HKT, Lai HT, Tran VC, Doan TLH, Duong AT, Lee CT, Nair P, Zulueta YA, Phan TB, Luu SDN. Improved thermoelectric power factor achieved by energy filtering in ZnO:Mg/ZnO hetero-structures. THIN SOLID FILMS 2021; 721:138537. [DOI: 10.1016/j.tsf.2021.138537] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
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Park W, Hwang H, Kim S, Park S, Jang KS. Optimized Thermoelectric Performance of Carbon Nanoparticle-Carbon Nanotube Heterostructures by Tuning Interface Barrier Energy. ACS APPLIED MATERIALS & INTERFACES 2021; 13:7208-7215. [PMID: 33528990 DOI: 10.1021/acsami.0c20592] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Herein, thermoelectric carbon nanoparticle (CNP)-carbon nanotube (CNT) heterostructures are introduced as a promising flexible thermoelectric material. The optimal barrier energy between the CNP and CNT increases the Seebeck coefficient (S) of the heterostructures through the energy filtering effect. For optimized thermoelectric performance, the CNP-CNT barrier energy can be effectively tuned by controlling the work function of the CNPs. The optimized p-type CNP-CNT heterostructures exhibited S and power factor (PF) of 50.6 ± 1.4 μV K-1 and 400 ± 26 μW m-1 K-2, respectively. The n-type CNP-CNT heterostructures, optimized for another work function of the CNPs, exhibited S and PF of up to -37.5 ± 3.4 μV K-1 and 214 ± 42 μW m-1 K-2, respectively. The energy harvesting capability of a thermoelectric generator prepared using p- and n-type CNP-CNT heterostructures with optimized barrier energies is demonstrated. The thermoelectric generator with 10 p-type and 9 n-type thermoelectric elements exhibited a maximum output power of 0.12 μW from a ΔT of 5 K. This work shows a facile strategy for synthesizing thermoelectric CNP-CNT heterostructures with optimized energy filtering effects. Application to the thermoelectric device on a paper substrate is also discussed.
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Affiliation(s)
- Woomin Park
- Center for Bionano Intelligence Education and Research and Department of Applied Chemistry (Major in Bionano Convergence), Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea
| | - Hyeonseok Hwang
- Center for Bionano Intelligence Education and Research and Department of Applied Chemistry (Major in Bionano Convergence), Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea
| | - Sohee Kim
- Center for Bionano Intelligence Education and Research and Department of Applied Chemistry (Major in Bionano Convergence), Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea
| | - Sungbin Park
- Center for Bionano Intelligence Education and Research and Department of Applied Chemistry (Major in Bionano Convergence), Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea
| | - Kwang-Suk Jang
- Center for Bionano Intelligence Education and Research and Department of Applied Chemistry (Major in Bionano Convergence), Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea
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Lukyanova LN, Makarenko IV, Usov OA. STM and STS studies of topological n-type (Bi, In) 2(Te, Se, S) 3thermoelectrics. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:465701. [PMID: 32702688 DOI: 10.1088/1361-648x/aba8c8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2020] [Accepted: 07/23/2020] [Indexed: 06/11/2023]
Abstract
In topological n-type thermoelectrics based on Bi2Te3with atomic substitutions Bi → In, Te → Se, S, the morphology and the surface states of Dirac fermions on the interlayer (0001) surface of van der Waals were studied by scanning tunneling microscopy and spectroscopy (STM/STS) techniques. By the STM method, the dark and light spots on the surface were found, which intensities depend on the composition and thermoelectric properties of solid solutions such as the Seebeck coefficient and thermoelectric power factor. The observed surface morphology features in the solid solutions are explained by distortions of surface electronic states originated from atomic substitutions, the influence of doping impurity, and formation mainly of substitutional impurity defects in thermoelectrics. The dips associated with substitutional impurities and antisite defects were found from the analysis of the height profiles obtained on the (0001) surface. Fast Fourier transform of the morphology STM images of the (0001) surface were used to obtain the interference patterns of the quasiparticles excitation caused by surface electrons scattering by defects. The Dirac point energy and its fluctuations, peak energies of surface defects, the positions of the valence and conduction band edges, and the energy gap were determined from an analysis of tunneling spectra. A correlation between the parameters of surface states of Dirac fermions and thermoelectric properties was found. Thus, a contribution of the fermions surface states increases with rise of the surface concentration in solid solutions with high power factor, and the largest concentration value was observed in the Bi1.98In0.02Te2.85Se0.15composition. The dependences of Fermi energy on the wave vector for different solid solutions are described by a set of Dirac cone sections located within the limits of the fluctuations of the Dirac point energy that explained by weak changes of the Fermi velocity for studied atomic substitutions in sublattices of bismuth telluride.
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Affiliation(s)
- L N Lukyanova
- Ioffe Institute, Russian Academy of Sciences, St Petersburg 194021, Russia
| | - I V Makarenko
- Ioffe Institute, Russian Academy of Sciences, St Petersburg 194021, Russia
| | - O A Usov
- Ioffe Institute, Russian Academy of Sciences, St Petersburg 194021, Russia
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Poncé S, Li W, Reichardt S, Giustino F. First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2020; 83:036501. [PMID: 31923906 DOI: 10.1088/1361-6633/ab6a43] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electron and hole mobilities. Over the last decades, our understanding of carrier mobilities has largely been shaped by experimental investigations and empirical models. Recently, advances in electronic structure methods for real materials have made it possible to study these properties with predictive accuracy and without resorting to empirical parameters. These new developments are unlocking exciting new opportunities, from exploring carrier transport in quantum matter to in silico designing new semiconductors with tailored transport properties. In this article, we review the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors. Our aim is threefold: to make this rapidly-growing research area accessible to a broad community of condensed-matter theorists and materials scientists; to identify key challenges that need to be addressed in order to increase the predictive power of these methods; and to identify new opportunities for increasing the impact of these computational methods on the science and technology of advanced materials. The review is organized in three parts. In the first part, we offer a brief historical overview of approaches to the calculation of carrier mobilities, and we establish the conceptual framework underlying modern ab initio approaches. We summarize the Boltzmann theory of carrier transport and we discuss its scope of applicability, merits, and limitations in the broader context of many-body Green's function approaches. We discuss recent implementations of the Boltzmann formalism within the context of density functional theory and many-body perturbation theory calculations, placing an emphasis on the key computational challenges and suggested solutions. In the second part of the article, we review applications of these methods to materials of current interest, from three-dimensional semiconductors to layered and two-dimensional materials. In particular, we discuss in detail recent investigations of classic materials such as silicon, diamond, gallium arsenide, gallium nitride, gallium oxide, and lead halide perovskites as well as low-dimensional semiconductors such as graphene, silicene, phosphorene, molybdenum disulfide, and indium selenide. We also review recent efforts toward high-throughput calculations of carrier transport. In the last part, we identify important classes of materials for which an ab initio study of carrier mobilities is warranted. We discuss the extension of the methodology to study topological quantum matter and materials for spintronics and we comment on the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism.
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Affiliation(s)
- Samuel Poncé
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom. Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Roychowdhury S, Samanta M, Banik A, Biswas K. Thermoelectric energy conversion and topological materials based on heavy metal chalcogenides. J SOLID STATE CHEM 2019. [DOI: 10.1016/j.jssc.2019.04.005] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Badillo-Ruiz CA, Olivares-Robles MA, Chanona-Perez JJ. Design of Nano-Structured Micro-Thermoelectric Generator: Load Resistance and Inflections in the Efficiency. ENTROPY 2019; 21:e21030224. [PMID: 33266940 PMCID: PMC7514704 DOI: 10.3390/e21030224] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2019] [Revised: 02/21/2019] [Accepted: 02/23/2019] [Indexed: 11/16/2022]
Abstract
In recent years the interest for the harvest of energy with micro thermoelectric generators (μTEG) has increased, due to its advantages compared to technologies that use fossil fuels. There are three ways to improve the performance of the device, by modifying its structure, type of material and operation control. In this study, the role of the load resistance RL on the performance of a μTEG with nanostructured materials is investigated. The interaction of the load resistance with the thermoelements exhibits interesting features, arising from the coupling of the temperature-dependent electrical and thermal transport properties at different temperature ranges and the architecture of nanostructured thermoelectric materials. This coupling results in inflections on the efficiency, i.e., maximum and minimum values of the efficiency at higher temperatures, 600–900 K. We show the explicit dependence of the performance of the μTEG in terms of the load resistance and discuss the underlying physics. The unusual features of the efficiency of nanostructured thermoelectric materials are a result of the behavior of the power factor and the nonequilibrium properties of the system. We also analyze the effect of the geometric shape of the thermoelements on the device. We determine the performance of the μTEG, evaluating the generation power and its efficiency. The results show that the efficiency of the device can decrease or increase depending on the value of RL, while the power decreases with an increase of the load resistance.
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Affiliation(s)
- Carlos Alberto Badillo-Ruiz
- Instituto Politecnico Nacional, Seccion de Estudios de Posgrado e Investigacion, Escuela Nacional de Ciencias Biologicas, Ciudad de Mexico 11340, Mexico
| | - Miguel Angel Olivares-Robles
- Instituto Politecnico Nacional, Seccion de Estudios de Posgrado e Investigacion, Escuela Superior de Ingenieria Mecanica y Electrica Unidad Culhuacan, Coyoacan, Ciudad de Mexico 04430, Mexico
- Correspondence: ; Tel.: +52-555-729-6000 (ext. 73262); Fax: +52-555-656-2058
| | - Jose Jorge Chanona-Perez
- Instituto Politecnico Nacional, Seccion de Estudios de Posgrado e Investigacion, Escuela Nacional de Ciencias Biologicas, Ciudad de Mexico 11340, Mexico
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