Ternary nitride semiconductors in the rocksalt crystal structure

Atomic insights into the interaction of N2, CO2, NH3, NO, and NO2 gas molecules with Zn2(V, Nb, Ta)N3 ternary nitride monolayers

The search for promising carrier blocking layer materials with high stability, including resistance to surface inhibition by environmental molecules that cause a drop in carrier mobility, is critical for the production of tandem solar cells. Based on density functional theory calculations, the reaction of atmospheric gases, including N2, CO2, NH3, NO, and NO2, with three promising Zn2(V, Nb, Ta)N3 monolayers is discovered. The results suggest the chemical adsorption of NH3 and physical adsorption of NO and NO2. In addition, the Zn2(V, Nb, Ta)N3 monolayers are characterized by a weak bonding with N2 and CO2. Charge redistribution is found at the interface between the monolayers and NH3, NO and NO2 molecules, leading to the formation of a local surface dipole that affects the functionality of the Zn2(V, Nb, Ta)N3 monolayers. The Zn2VN3 monolayer is less reactive with atmospheric gases and thus is the most promising for application in tandem solar cells. Notably, the revealed nontrivial behavior of the Zn2(V, Nb, Ta)N3 monolayers towards N-containing gases makes them promising for application in gas sensing. Specifically, the Zn2TaN3 monolayer is the most promising for application in molecular sensing due to its high reversibility and distinguished interaction with NH3, NO, and NO2 gases.

Tolerance Factor and Phase Stability of the KCoO2-Type AMN2 Nitrides

In order to help understand the structural stability of KCoO2-type ternary nitrides AMN2, referring to perovskite structure, a tolerance factor t is proposed to describe the size effect on the phase/symmetry options of the experimentally accessible AMN2 nitrides. This leads to a range of t values above 0.946 for structurally stable KCoO2-type AMN2 nitrides with t values around 0.970 for the orthorhombic and tetragonal phase boundary. In contrast, most of AMN2 nitrides exhibit α-NaFeO2-type structure with t ∼ 0.898-0.946 and cations ordered or disordered rocksalt structure while t below 0.898. Employing the proposed criterion, the structure formation for other ternary AMN2 compositions with lanthanum and alkaline earth cations for the A sites were predicted, which was testified through the synthesis attempts and complemented by formation energy evaluations. The efforts to synthesize the ternary Lanthanide and alkaline earth-based AMN2 nitrides were unsuccessful, which could associate the structural instability with the large formation energies of lanthanide nitrides LaMN2 and the greater tolerance factor of 1.048 for BaTiN2. The experimentally already synthesized AMN2 nitrides could be categorized into three types with different tolerance factors, and scarce AMN2 nitrides with lower formation energies would be accessible using different synthetic routes beyond the traditional solid-state synthesis method.

Mechanistically Guided Materials Chemistry: Synthesis of Ternary Nitrides, CaZrN2 and CaHfN2

Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrides is difficult, in part because intermediate and product phases often have high cohesive energies that inhibit diffusion. Here, we report the synthesis of two new phases, calcium zirconium nitride (CaZrN2) and calcium hafnium nitride (CaHfN2), by solid state metathesis reactions between Ca3N2 and MCl4 (M = Zr, Hf). Although the reaction nominally proceeds to the target phases in a 1:1 ratio of the precursors via Ca3N2 + MCl4 → CaMN2 + 2 CaCl2, reactions prepared this way result in Ca-poor materials (CaxM2-xN2, x < 1). A small excess of Ca3N2 (ca. 20 mol %) is needed to yield stoichiometric CaMN2, as confirmed by high-resolution synchrotron powder X-ray diffraction. In situ synchrotron X-ray diffraction studies reveal that nominally stoichiometric reactions produce Zr3+ intermediates early in the reaction pathway, and the excess Ca3N2 is needed to reoxidize Zr3+ intermediates back to the Zr4+ oxidation state of CaZrN2. Analysis of computationally derived chemical potential diagrams rationalizes this synthetic approach and its contrast from the synthesis of MgZrN2. These findings additionally highlight the utility of in situ diffraction studies and computational thermochemistry to provide mechanistic guidance for synthesis.

Defect rocksalt structures in the La-Na-N system

Sodium azide (NaN3) is a versatile nitrogen source that can be used for the synthesis of new nitrides under high-pressure and temperature conditions. Reactions between lanthanum nitride (LaN) and sodium azide (NaN3) at 800°C under 8 GPa pressure have led to the discovery of two defect rocksalt phases which are the first reported ternaries in the La-Na-N system. Preliminary structure assignments have been made based on fits to powder X-ray diffraction profiles. One phase is La1-xNa3xN with vacancies at octahedral La sites and interstitial tetrahedral Na cations. This phase has a tetragonally distorted rocksalt structure (space group I4[Formula: see text]mmm, a = 3.8704(2) and c = 5.2098(3) Å for nominal x = 0.10) and the distortion decreases with increasing Na content (space group I4[Formula: see text]mmm, a = 3.8060(2) Å, c = 5.2470(3) Å for nominal x = 0.14), further giving a cubic phase (a = 5.3055(2) Å) for nominal x = 0.25. This coexists with another cubic [Formula: see text] phase (a = 5.1561 (5) Å), tentatively identified as rocksalt 'NaN1/3' stabilized by a small amount of La; NaLayN(1+3y)/3 with y ≈ 1%. These initial investigations reveal that the high-pressure La-Na-N phase diagram may be rich in defect rocksalt-type materials although further work using neutron diffraction will be needed to confirm the structures. This article is part of the theme issue 'Exploring the length scales, timescales and chemistry of challenging materials (Part 1)'.

Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride

Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band gap semiconductor, suffers from low hole mobility. Utilizing the ab initio Boltzmann transport formalism including spin-orbit coupling, here we show the dominating role of ionized impurity scattering in reducing the hole mobility in ScN thin films. We suggest a route to increase the hole mobility by reversing band ordering through strain engineering. Our calculation shows that the biaxial tensile strain in ScN lifts the split-off hole band above the heavy hole and light hole bands, leading to a lower hole-effective mass and increasing mobility. Along with the impurity scattering, the Fröhlich interaction also plays a vital role in the carrier scattering mechanism due to the polar nature of ScN. Increased hole mobility in ScN will lead to higher efficiencies in thermoelectric, plasmonics, and neuromorphic computing devices.

Polar Nitride Perovskite LaWN3-δ with Orthorhombic Structure

Nitride perovskite LaWN₃ has been predicted to be a promising ferroelectric material with unique properties for diverse applications. However, due to the challenging sample preparation at ambient pressure, the crystal structure of this nitride remains unsolved, which results in many ambiguities in its properties. Here, the authors report a comprehensive study of LaWN₃ based on high-quality samples synthesized by a high-pressure method, leading to a definitive resolution of its crystal structure involving nitrogen deficiency. Combined with theoretical calculations, these results show that LaWN₃ adopts an orthorhombic Pna2₁ structure with a polar symmetry, possessing a unique atomic polarization along the c-axis. The associated atomic polar distortions in LaWN₃ are driven by covalent hybridization of W: 5d and N: 2p orbitals, opening a direct bandgap that explains its semiconducting behaviors. The structural stability and electronic properties of this nitride are also revealed to be closely associated with its nitrogen deficiency. The success in unraveling the structural and electronic ambiguities of LaWN₃ would provide important insights into the structures and properties of the family of nitride perovskites.

MgXN2 (X = Hf/Zr) Monolayers: Auxetic Semiconductor with Highly Anisotropic Optical/Mechanical Properties and Carrier Mobility

Two-dimensional (2D) semiconducting materials with distinct anisotropic physical properties have attracted intense interests. Herein, we show theoretical predictions that MgXN₂ (X = Hf/Zr) monolayers are auxetic semiconductors with highly anisotropic electronic, optical, and mechanical properties. The density functional theory calculations coupled with a PSO algorithm (global-minimum search) suggest that both MgHfN₂ (MgZrN₂) monolayers exhibit orthorhombic symmetry (Pmma) and are direct-gap (indirect-gap) semiconductors with a bandgap of 2.43 eV (2.13 eV). Specifically, the MgHfN₂ monolayer exhibits highly anisotropic hole mobility as well as very high electron mobility (∼10⁴ cm² V^-1 s^-1). G₀W₀+BSE calculations indicate that both monolayers bear notable optical anisotropy and relatively large exitonic binding energy (∼0.6 eV). In addition, both monolayers acquire remarkable mechanical anisotropy with a negative in-plane Poisson's ratio (∼-0.2) and high Young's modulus (∼260 N/m). The combination of highly anisotropic electronic, optical, and mechanical properties endows MgXN₂ monolayers as potentially useful parts in multifunctional nanoelectronic devices.

High-Throughput Selection and Experimental Realization of Two New Ce-Based Nitride Perovskites: CeMoN3 and CeWN3

Nitride perovskites have only been experimentally realized in very few cases despite the widespread existence and commercial importance of perovskite materials. From oxide perovskites used in ultrasonics to halide perovskites that have revolutionized the photovoltaics industry, the discovery of new perovskite materials has historically impacted a wide number of fields. Here, we add two new perovskites, CeWN₃ and CeMoN₃, to the list of experimentally realized perovskite nitrides using high-throughput computational screening and subsequent high-throughput thin film growth techniques. Candidate compositions are first down-selected using a tolerance factor and then thermochemical stability. A novel competing fluorite-family phase is identified for both material systems, which we hypothesize is a transient intermediate phase that crystallizes during the evolution from an amorphous material to a stable perovskite. Different processing routes to overcome the competing fluorite phase and obtain phase-pure nitride perovskites are demonstrated for the CeMoN_3-x and CeWN_3-x material systems, which provide a starting point for the development of future nitride perovskites. Additionally, we find that these new perovskite phases have interesting low-temperature magnetic behavior: CeMoN_3-x orders antiferromagnetically below T _N ≈ 8 K with indications of strong magnetic frustration, while CeWN_3-x exhibits no long-range order down to T = 2 K but has strong antiferromagnetic correlations. This work demonstrates the importance and effectiveness of using high-throughput techniques, both computational and experimental: they are integral to optimize the process of realizing two entirely novel nitride perovskites.

Zinc Titanium Nitride Semiconductor toward Durable Photoelectrochemical Applications

Photoelectrochemical fuel generation is a promising route to sustainable liquid fuels produced from water and captured carbon dioxide with sunlight as the energy input. Development of these technologies requires photoelectrode materials that are both photocatalytically active and operationally stable in harsh oxidative and/or reductive electrochemical environments. Such photocatalysts can be discovered based on co-design principles, wherein design for stability is based on the propensity for the photocatalyst to self-passivate under operating conditions and design for photoactivity is based on the ability to integrate the photocatalyst with established semiconductor substrates. Here, we report on the synthesis and characterization of zinc titanium nitride (ZnTiN₂) that follows these design rules by having a wurtzite-derived crystal structure and showing self-passivating surface oxides created by electrochemical polarization. The sputtered ZnTiN₂ thin films have optical absorption onsets below 2 eV and n-type electrical conduction of 3 S/cm. The band gap of this material is reduced from the 3.36 eV theoretical value by cation-site disorder, and the impact of cation antisites on the band structure of ZnTiN₂ is explored using density functional theory. Under electrochemical polarization, the ZnTiN₂ surfaces have TiO₂- or ZnO-like character, consistent with Materials Project Pourbaix calculations predicting the formation of stable solid phases under near-neutral pH. These results show that ZnTiN₂ is a promising candidate for photoelectrochemical liquid fuel generation and demonstrate a new materials design approach to other photoelectrodes with self-passivating native operational surface chemistry.

Two-Step Solid-State Synthesis of Ternary Nitride Materials

Ternary nitride materials hold promise for many optical, electronic, and refractory applications; yet, their preparation via solid-state synthesis remains challenging. Often, high pressures or reactive gases are used to manipulate the effective chemical potential of nitrogen, yet these strategies require specialized equipment. Here, we report on a simple two-step synthesis using ion-exchange reactions that yield rocksalt-derived MgZrN2 and Mg2NbN3, as well as layered MgMoN2. All three compounds show almost temperature-independent and weak paramagnetic responses to an applied magnetic field at cryogenic temperatures, indicating phase-pure products. The key to synthesizing these ternary materials is an initial low-temperature step (300-450 °C) to promote Mg-M-N nucleation. The intermediates then are annealed (800-900 °C) to grow crystalline domains of the ternary product. Calorimetry experiments reveal that initial reaction temperatures are determined by phase transitions of reaction precursors, whereas heating directly to high temperatures results in decomposition. These two-step reactions provide a rational guide to material discovery of other bulk ternary nitrides.

Combustion Reactions between Transition-Metal Chlorides and Sodium Amide and Their Ignition Temperature

Combustion reactions between metal chlorides and sodium amide proceed in a short time; however, these reactions must be carried out with appropriate safety measures. Investigating their ignition temperatures would facilitate safe handling and give kinetic insights about the reaction between powders. Here, we investigated the products of the reactions between metal chlorides and sodium amide and measured their ignition temperatures. The products were mainly composed of nitrides, metals, and sodium chloride. The reactions of 4d and 5d metal chlorides initiated the reaction below room temperature, while 3d metal chlorides, except copper chloride, initiated the reaction upon heating. We found the correlation between the ignition temperatures and the reaction energies of the combustion reaction.

Synthesis of Zn2NbN3ternary nitride semiconductor with wurtzite-derived crystal structure

Binary III-N nitride semiconductors with wurtzite crystal structure such as GaN and AlN have been long used in many practical applications ranging from optoelectronics to telecommunication. The structurally related ZnGeN₂or ZnSnN₂derived from the parent binary compounds by cation mutation (elemental substitution) have recently attracted attention, but such ternary nitride materials are mostly limited to II-IV-N₂compositions. This paper demonstrates synthesis and characterization of zinc niobium nitride (Zn₂NbN₃)-a previously unreported II₂-V-N₃ternary nitride semiconductor. The Zn₂NbN₃thin films are synthesized using a one-step adsorption-controlled growth that locks in the targeted stoichiometry, and a two-step deposition/annealing method that suppresses the loss of Zn and N. Measurements indicate that this sputtered Zn₂NbN₃crystalizes in cation-disordered wurtzite-derived structure, in contrast to chemically related rocksalt-derived Mg₂NbN₃compound, also synthesized here for comparison using the two-step method. The estimated wurtzite lattice parameter ratio of Zn₂NbN₃is 1.55, and the optical absorption onset is at 2.1 eV. Both of these values are lower compared to published Zn₂NbN₃computational values ofc/a= 1.62 andE_g= 3.5-3.6 eV. Additional theoretical calculations indicate that this difference is due to cation disorder in experimental samples, suggesting a way to tune the structural parameters and the resulting properties of heterovalent ternary nitride materials. Overall, this work expands the wurtzite family of nitride semiconductors to include Zn₂NbN₃, and suggests that related II₂-V-N₃and other ternary nitrides should be possible to synthesize.

Computational discovery of stable and metastable ternary oxynitrides

Materials design from first principles enables exploration of uncharted chemical spaces. Extensive computational searches have been performed for mixed-cation ternary compounds, but mixed-anion systems are gaining increased interest as well. Central to computational discovery is the crystal structure prediction, where the trade-off between reliance on prototype structures and size limitations of unconstrained sampling has to be navigated. We approach this challenge by letting two complementary structure sampling approaches compete. We use the kinetically limited minimization approach for high-throughput unconstrained crystal structure prediction in smaller cells up to 21 atoms. On the other hand, ternary-and, more generally, multinary-systems often assume structures formed by atomic ordering on a lattice derived from a binary parent structure. Thus, we additionally sample atomic configurations on prototype lattices with cells up to 56 atoms. Using this approach, we searched 65 different charge-balanced oxide-nitride stoichiometries, including six known systems as the control sample. The convex hull analysis is performed both for the thermodynamic limit and for the case of synthesis with activated nitrogen sources. We identified 34 phases that are either on the convex hull or within a viable energy window for potentially metastable phases. We further performed structure sampling for "missing" binary nitrides whose energies are needed for the convex hull analysis. Among these, we discovered metastable Ce₃N₄ as a nitride analog of the tetravalent cerium oxide, which becomes stable under slightly activated nitrogen condition Δμ_N > +0.07 eV. Given the outsize role of CeO₂ in research and application, Ce₃N₄ is a potentially important discovery.

Metastable Ta2N3 with highly tunable electrical conductivity via oxygen incorporation

The binary Ta-N chemical system includes several compounds with notable prospects in microelectronics, solar energy harvesting, and catalysis. Among these, metallic TaN and semiconducting Ta3N5 have garnered significant interest, in part due to their synthetic accessibility. However, tantalum sesquinitride (Ta2N3) possesses an intermediate composition and largely unknown physical properties owing to its metastable nature. Herein, Ta2N3 is directly deposited by reactive magnetron sputtering and its optoelectronic properties are characterized. Combining these results with density functional theory provides insights into the critical role of oxygen in both synthesis and electronic structure. While the inclusion of oxygen in the process gas is critical to Ta2N3 formation, the resulting oxygen incorporation in structural vacancies drastically modifies the free electron concentration in the as-grown material, thus leading to a semiconducting character with a 1.9 eV bandgap. Reducing the oxygen impurity concentration via post-synthetic ammonia annealing increases the conductivity by seven orders of magnitude and yields the metallic characteristics of a degenerate semiconductor, consistent with theoretical predictions. Thus, this inverse oxygen doping approach - by which the carrier concentration is reduced by the oxygen impurity - offers a unique opportunity to tailor the optoelectronic properties of Ta2N3 for applications ranging from photochemical energy conversion to advanced photonics.

On the crystal chemistry of inorganic nitrides: crystal-chemical parameters, bonding behavior, and opportunities in the exploration of their compositional space

The scarcity of nitrogen in Earth's crust, combined with challenging synthesis, have made inorganic nitrides a relatively unexplored class of compounds compared to their naturally abundant oxide counterparts. To facilitate exploration of their compositional space via a priori modeling, and to help a posteriori structure verification not limited to inferring the oxidation state of redox-active cations, we derive a suite of bond-valence parameters and Lewis acid strength values for 76 cations observed bonding to N3-, and further outline a baseline statistical knowledge of bond lengths for these compounds. Examination of structural and electronic effects responsible for the functional properties and anomalous bonding behavior of inorganic nitrides shows that many mechanisms of bond-length variation ubiquitous to oxide and oxysalt compounds (e.g., lone-pair stereoactivity, the Jahn-Teller and pseudo Jahn-Teller effects) are similarly pervasive in inorganic nitrides, and are occasionally observed to result in greater distortion magnitude than their oxide counterparts. We identify promising functional units for exploring uncharted chemical spaces of inorganic nitrides, e.g. multiple-bond metal centers with promise regarding the development of a post-Haber-Bosch process proceeding at milder reaction conditions, and promote an atomistic understanding of chemical bonding in nitrides relevant to such pursuits as the development of a model of ion substitution in solids, a problem of great relevance to semiconductor doping whose solution would fast-track the development of compound solar cells, battery materials, electronics, and more.

Synthesis of CaSnN2 via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N2 (II = Ca, Mg, Zn) Semiconductors

A novel ternary nitride semiconductor, CaSnN₂, with a layered rock-salt-type structure (R3̅m) was synthesized via a high-pressure metathesis reaction. The properties and structures of II-Sn-N₂ (II = Ca, Mg, Zn) semiconductors were also systematically studied, and the differences among them were revealed by comparison. These semiconductor materials showed a rock-salt- or wurtzite-type structure depending on the combined effect of the synthetic conditions and the characteristics of the group II elements. Additionally, the rock-salt-type structures of CaSnN₂ and MgSnN₂ (i.e., the ambient-pressure phase) were different from those predicted using first-principles calculations. Further, on the basis of first-principles calculations and consideration of the pressure effect, the recovered CaSnN₂ sample showed an R3̅m structure. CaSnN₂ and MgSnN₂ showed a band gap of 2.3-2.4 eV, which is suitable for overcoming the green-light-gap problem. These semiconductors also showed a strong cathode luminescence peak at room temperature, and generalized gradient approximation (GGA) calculations revealed that CaSnN₂ has a direct band gap. These inexpensive and nontoxic semiconductors (II-Sn-N₂ semiconductors (II = Ca, Mg, Zn)), with mid band gaps are required as pigments to replace cadmium-based materials. They can also be used in emitting devices and as photovoltaic absorbers, replacing In_xGa_1-xN semiconductors.

Combinatorial Synthesis of Magnesium Tin Nitride Semiconductors

Nitride materials feature strong chemical bonding character that leads to unique crystal structures, but many ternary nitride chemical spaces remain experimentally unexplored. The search for previously undiscovered ternary nitrides is also an opportunity to explore unique materials properties, such as transitions between cation-ordered and -disordered structures, as well as to identify candidate materials for optoelectronic applications. Here, we present a comprehensive experimental study of MgSnN2, an emerging II-IV-N2 compound, for the first time mapping phase composition and crystal structure, and examining its optoelectronic properties computationally and experimentally. We demonstrate combinatorial cosputtering of cation-disordered, wurtzite-type MgSnN2 across a range of cation compositions and temperatures, as well as the unexpected formation of a secondary, rocksalt-type phase of MgSnN2 at Mg-rich compositions and low temperatures. A computational structure search shows that the rocksalt-type phase is substantially metastable (>70 meV/atom) compared to the wurtzite-type ground state. Spectroscopic ellipsometry reveals optical absorption onsets around 2 eV, consistent with band gap tuning via cation disorder. Finally, we demonstrate epitaxial growth of a mixed wurtzite-rocksalt MgSnN2 on GaN, highlighting an opportunity for polymorphic control via epitaxy. Collectively, these findings lay the groundwork for further exploration of MgSnN2 as a model ternary nitride, with controlled polymorphism, and for device applications, enabled by control of optoelectronic properties via cation ordering.

Wide Band Gap Chalcogenide Semiconductors

Wide band gap semiconductors are essential for today's electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E_G > 2 eV) chalcogenide materials-namely, II-VI MCh binaries, CuMCh₂ chalcopyrites, Cu₃MCh₄ sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials-and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications-for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes-that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.

COMBIgor: Data-Analysis Package for Combinatorial Materials Science

Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially resolved characterization of structure and properties. Because of the maturation of combinatorial methods and their successful application in many fields, the modern combinatorial laboratory produces diverse and complex data sets requiring advanced analysis and visualization techniques. In order to utilize these large data sets to uncover new knowledge, the combinatorial scientist must engage in data science. For data science tasks, most laboratories adopt common-purpose data management and visualization software. However, processing and cross-correlating data from various measurement tools is no small task for such generic programs. Here we describe COMBIgor, a purpose-built open-source software package written in the commercial Igor Pro environment and designed to offer a systematic approach to loading, storing, processing, and visualizing combinatorial data. It includes (1) methods for loading and storing data sets from combinatorial libraries, (2) routines for streamlined data processing, and (3) data-analysis and -visualization features to construct figures. Most importantly, COMBIgor is designed to be easily customized by a laboratory, group, or individual in order to integrate additional instruments and data-processing algorithms. Utilizing the capabilities of COMBIgor can significantly reduce the burden of data management on the combinatorial scientist.