Silicon quantum dots: surface matters

Nonadiabatic molecular dynamics with subsystem density functional theory: application to crystalline pentacene

In this work, we report the development and assessment of the nonadiabatic molecular dynamics approach with the electronic structure calculations based on the linearly scaling subsystem density functional method. The approach is implemented in an open-source embedded Quantum Espresso/Libra software specially designed for nonadiabatic dynamics simulations in extended systems. As proof of the applicability of this method to large condensed-matter systems, we examine the dynamics of nonradiative relaxation of excess excitation energy in pentacene crystals with the simulation supercells containing more than 600 atoms. We find that increased structural disorder observed in larger supercell models induces larger nonadiabatic couplings of electronic states and accelerates the relaxation dynamics of excited states. We conduct a comparative analysis of several quantum-classical trajectory surface hopping schemes, including two new methods proposed in this work (revised decoherence-induced surface hopping and instantaneous decoherence at frustrated hops). Most of the tested schemes suggest fast energy relaxation occurring with the timescales in the 0.7-2.0 ps range, but they significantly overestimate the ground state recovery rates. Only the modified simplified decay of mixing approach yields a notably slower relaxation timescales of 8-14 ps, with a significantly inhibited ground state recovery.

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

Organic solar cells are a promising candidate for practical use because of their low material cost and simple production procedures. The challenge is selecting materials with the right properties and how they interrelate in the context of manufacturing the device. This paper presents studies on CdSe/ZnS nanodots as dopants in a polymer-fullerene matrix for application in organic solar cells. An assembly of poly(3-hexylthiophene-2,5-diyl) and 6,6-phenyl-C71-butyric acid methyl ester was used as the active reference layer. Absorption and luminescence spectra as well as the dispersion relations of refractive indices and extinction coefficient were investigated. The morphologies of the thin films were studied with atomic force microscopy. The chemical boundaries of the ternary layers were determined by Raman spectroscopy. Based on UPS studies, the energy diagram of the potential devices was determined. The resistivity of the layers was determined using impedance spectroscopy. Simulations (General-Purpose Photovoltaic Device Model) showed a performance improvement in the cells with quantum dots of 0.36-1.45% compared to those without quantum dots.

Cost-Effective Ultrabright Silicon Quantum Dots and Highly Efficient LEDs from Low-Carbon Hydrogen Silsesquioxane Polymers

Cost-effective methods of synthesizing bright colloidal silicon quantum dots (SiQDs) for use as heavy-metal-free QDs, which have applications as light sources in biomedicine and displays, are required. We report simple protocols for synthesizing ultrabright colloidal SiQDs and fabricating SiQD LEDs based on hydrogen silsesquioxane (HSQ) polymer synthesis. Red photoluminescence with a quantum yield (PLQY) of 60-80% and LEDs with an external quantum efficiency (EQE) of >10% were obtained at 1/3600th of the cost of existing methods. This was achieved by using HSiCl3 and a low-polarity solvent to prepare the HSQ polymer and by optimizing the LED hole-injection layer thickness. A stochastic analysis of 31 SiQD syntheses revealed that SiQDs with the highest PLQYs were obtained from a hard, low-carbon HSQ polymer precursor containing many Si-H groups and cage structures. Notably, simple FTIR measurements predicted whether a HSQ polymer would yield high-PLQY SiQDs and high-EQE LEDs. These straightforward, cost-effective protocols should lead to advances in SiQD synthesis and LED fabrication methods.

Effect of phosphorus doping on the luminescence intensity of Si-NC in SiO/Si multilayers

The application of silicon nanocrystals (Si-NC) is somewhat limited due to their low luminescence intensity. Therefore, it is of interest to investigate methods for enhancing the luminescence intensity of Si-NC. In this study, phosphorus (P)-doped Si-NC with two different doping methods were prepared by electron beam thermal evaporation: in-situ doping (during synthesis) and ex-situ doping (after synthesis). The photoluminescence (PL) intensity and crystallinity of Si-NC can be enhanced through phosphorus doping. Moreover, a comparison between two different methods of Si-NC doping reveals that the luminescence intensity of in-situ P-doped Si-NC is superior to that of ex-situ P-doped Si-NC, which is increased by an order of magnitude compared to the PL intensity of undoped Si-NC.

Effect of the surface coverage of an alkyl carboxylic acid monolayer on waterborne and cellular uptake behaviors for silicon quantum dots

This article reports the development of highly waterborne silicon quantum dots (Si QDs) terminated with a reactive group for grafting of biomolecules. Hydrogen-terminated QDs were prepared by thermal disproportionation of amorphous hydrogen silsesquioxane derived from triethoxysilane followed by hydrofluoric etching. Next, the hydrogenated Si surfaces were exposed to 10-undecenoic acid at different temperatures in Ar atmosphere, yielding the termination of the QDs with a carboxyl group. The thermal hydrosilylation of 10-undecenoic acid yielded the termination of the QDs with a carboxyl group. An increase in molecular coverage of an undecanoic acid (UA) monolayer resulted in both the enhanced increase of zeta-potential in a negative direction for a greater water-dispersity and the increase of absolute quantum yield (QY) of photoluminescence (PL). PLQY improved for ~ 1% to 26% with increasing UA coverage. We assessed the molecular interaction between the UA-SiQDs and HeLa cells by means of cellular uptake experiments using the QDs with different UA coverages. Results showed that the QDs with the highest dispersity in water were not internalized in the cells under confocal fluorescence microscopic observation. In contrast, the QDs with lower coverage of UA monolayer were internalized by endocytosis when incubated with HeLa cells. This contrasting observation opens the possibility of successfully preparing carboxy-capped SiQDs that do not allow cellular uptake but are targeted to specific cells by appropriate conjugation with biomolecules.

Nonadiabatic Molecular Dynamics with Extended Density Functional Tight-Binding: Application to Nanocrystals and Periodic Solids

In this work, we report a new methodology for nonadiabatic molecular dynamics calculations within the extended tight-binding (xTB) framework. We demonstrate the applicability of the developed approach to finite and periodic systems with thousands of atoms by modeling "hot" electron relaxation dynamics in silicon nanocrystals and electron-hole recombination in both a graphitic carbon nitride monolayer and a titanium-based metal-organic framework (MOF). This work reports the nonadiabatic dynamic simulations in the largest Si nanocrystals studied so far by the xTB framework, with diameters up to 3.5 nm. For silicon nanocrystals, we find a non-monotonic dependence of "hot" electron relaxation rates on the nanocrystal size, in agreement with available experimental reports. We rationalize this relationship by a combination of decreasing nonadiabatic couplings related to system size and the increase of available coherent transfer pathways in systems with higher densities of states. We emphasize the importance of proper treatment of coherences for obtaining such non-monotonic dependences. We characterize the electron-hole recombination dynamics in the graphitic carbon nitride monolayer and the Ti-containing MOF. We demonstrate the importance of spin-adaptation and proper sampling of surface hopping trajectories in modeling such processes. We also assess several trajectory surface hopping schemes and highlight their distinct qualitative behavior in modeling the excited-state dynamics in superexchange-like models depending on how they handle coherences between nearly parallel states.

Water-Soluble Silicon Quantum Dots toward Fluorescence-Guided Photothermal Nanotherapy

We report carboxy-terminated silicon quantum dots (SiQDs) that exhibit high solubility in water due to the high molecular coverage of surface monolayers, bright light emission with high photoluminescence quantum yields (PLQYs), long-term stability in the PL property for monitoring cells, less toxicity to the cells, and a high photothermal response. We prepared water-soluble SiQDs by the thermal hydrosilylation of 10-undecenoic acid on their hydrogen-terminated surfaces, provided by the thermal disproportionation of triethoxysilane hydrolyzed at pH 3 and subsequent hydrofluoric etching. The 10-undecanoic acid-functionalized SiQDs (UA:SiQDs) showed long-term stability in hydrophilic solvents including ethanol and water (pH 7). We assess their interaction with live cells by means of cellular uptake, short-term toxicity, and, for the first time, long-term cytotoxicity. Results show that UA:SiQDs are potential candidates for theranostics, with their good optical properties enabling imaging for more than 18 days and a photothermal response having a 25.1% photothermal conversion efficiency together with the direct evidence of cell death by laser irradiation. UA:SiQDs have low cytotoxicity with full viability of up to 400 μg/mL for the short term and a 50% cell viability value after 14 days of incubation at a 50 μg/mL concentration.

Ligand-Induced Ground- and Excited-State Chirality in Silicon Nanoparticles: Surface Interactions Matter

Silicon-based light-emitting materials have emerged as a favorable substitute to various organic and inorganic systems due to silicon's high natural abundance, low toxicity, and excellent biocompatibility. However, efforts on the design of free-standing silicon nanoparticles with chiral non-racemic absorption and emission attributes are rather scare. Herein, we unravel the structural requirements for ligand-induced chirality in silicon-based nanomaterials by functionalizing with D- and L-isomers of a bifunctional ligand, namely, tryptophan. The structural aspects of these systems are established using high-resolution high-angle annular dark-field imaging in the scanning transmission electron microscopy mode, solid-state nuclear magnetic resonance, Fourier transform infrared, and X-ray photoelectron spectroscopy. Silicon nanoparticles capped with L- and D-isomers of tryptophan displayed positive and negative monosignated circular dichroic signals and circularly polarized luminescence indicating their ground- and excited-state chirality. Various studies supported by density functional theory calculations signify that the functionalization of indole ring nitrogen on the silicon surface plays a decisive role in modifying the chiroptical characteristics by generating emissive charge-transfer states. The chiroptical responses originate from the multipoint interactions of tryptophan with the nanoparticle surface through the indole nitrogen and -CO₂^- groups that can transmit an enantiomeric structural imprint on the silicon surface. However, chiroptical properties are not observed in phenylalanine- and alanine-capped silicon nanoparticles, which are devoid of Si-N bonds and chiral footprints. Thus, the ground- and excited-state chiroptics in tryptophan-capped silicon nanoparticles originates from the collective effect of ligand-bound emissive charge-transfer states and chiral footprints. Being the first report on the circularly polarized luminescence in silicon nanoparticles, this work will open newer possibilities in the field of chirality.

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

In the past decades, silicon nanocrystals have received vast attention and have been widely studied owing to not only their advantages including nontoxicity, high availability, and abundance but also their unique luminescent properties distinct from bulk silicon. Among the various synthetic methods of silicon nanocrystals, thermal disproportionation of silicon suboxides (often with H as another major composing element) bears the superiorities of unsophisticated equipment requirements, feasible processing conditions, and precise control of nanocrystals size and structure, which guarantee a bright industrial application prospect. In this paper, we summarize the recent progress of thermal disproportionation chemistry for the synthesis of silicon nanocrystals, with the focus on the effects of temperature, Si/O ratio, and the surface groups on the resulting silicon nanocrystals’ structure and their corresponding photoluminescent properties. Moreover, the paradigmatic application scenarios of the photoluminescent silicon nanocrystals synthesized via this method are showcased or envisioned.

Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders

Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst by lithographic techniques facilitated the patterning of crystalline and polycrystalline wafer substrates. Galvanic deposition of metals on semiconductors has a natural tendency to produce nanoparticles rather than flat uniform films. This characteristic makes possible the etching of wafers and particles with arbitrary shape and size. While it has been widely recognized that spontaneous deposition of metal nanoparticles can be used in connection with etching to porosify wafers, it is also possible to produced nanostructured powders. Metal-assisted catalytic etching (MACE) can be controlled to produce (1) etch track pores with shapes and sizes closely related to the shape and size of the metal nanoparticle, (2) hierarchically porosified substrates exhibiting combinations of large etch track pores and mesopores, and (3) nanowires with either solid or mesoporous cores. This review discussed the mechanisms of porosification, processing advances, and the properties of the etch product with special emphasis on the etching of silicon powders.

Luminescence mechanism in hydrogenated silicon quantum dots with a single oxygen ligand

Though photoluminescence (PL) of Si quantum dots (QDs) has been known for decades and both theoretical and experimental studies have been extensive, their luminescence mechanism has not been elaborated. Several models have been proposed to explain the mechanism. A deep insight into the origin of light emissions in Si QDs is necessary. This work calculated the ground- and excited state properties of hydrogenated Si QDs with various diameters, including full hydrogen passivation, single Si[double bond, length as m-dash]O ligands, single epoxide and coexisting Si[double bond, length as m-dash]O and epoxide structures in order to investigate the dominant contribution states for luminescence. The results revealed that even a single oxygen atom in hydrogenated Si QDs can dramatically change their electronic and optical properties. Intriguingly, we found that a size-independent emission, the strongest among all possible emissions, was induced by the single Si[double bond, length as m-dash]O passivated Si-QDs. In non-oxidized Si-QDs exhibiting a core-related size-tunable emission, the luminescence properties can be modulated by the ligands of Si QDs, and a very small number of oxygen ligands can strongly influence the luminescence of nanocrystalline silicon. Our findings deepen the understanding of the PL mechanism of Si QDs and can further promote the development of silicon-based optoelectronic devices.

Band-Gap Tunability in Partially Amorphous Silicon Nanoparticles Using Single-Dot Correlative Microscopy

Silicon nanoparticles (Si-NPs) represent one of many types of nanomaterials, where the origin of emission is difficult to assess due to a complex interplay between the core and surface chemistry. Band-gap tunability in Si-NPs is predicted to span from the infrared to the ultraviolet spectral range, which is rarely observed in practice. In this work, we directly assess the size dependence of the optical band gap using a single-dot correlative microscopy tool, where the size of the individual NPs is measured using atomic force microscopy (AFM) and the optical band gap is evaluated from single-dot photoluminescence measured on the very same NPs. We analyze 2-8 nm alkyl-capped Si-NPs prepared by a sol-gel method, followed by annealing at 1300 °C. Surprisingly, we find that the optical band gap is given by the amorphous shell, as evidenced by the convergence of the optical band gap size dependence toward the amorphous Si band gap of ∼1.56 eV. We propose that the structural disorder might be the reason behind the often reported limited emission tunability from various Si-NPs in the literature. We believe that our message points toward a pressing need for development and broader use of such direct correlative single-dot microscopy methods to avoid possible misinterpretations that could arise from attempts to recover size-band gap relation from ensemble methods, as practiced nowadays.

Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

Wafer-scale fabrication of isolated luminescent silicon quantum dots using standard CMOS technology

A wafer-scale fabrication method for isolated silicon quantum dots (Si QDs) using standard CMOS technology is presented. Reactive ion etching was performed on the device layer of a silicon-on-insulator wafer, creating nano-sized silicon islands. Subsequently, the wafer was annealed at 1100 °C for 1 h in an atmosphere of 5% H₂ in Ar, forming a thin oxide passivating layer due to trace amounts of oxygen. Isolated Si QDs covering large areas (∼mm²) were revealed by photoluminescence (PL) measurements. The emission energies of such Si QDs can span over a broad range, from 1.3 to 2.0 eV and each dot is typically characterized by a single emission line at low temperatures. Most of the Si QDs exhibited a high degree of linear polarization along Si crystallographic directions [[Formula: see text]] and [[Formula: see text]]. In addition, system resolution-limited (250 μeV) PL linewidths (full width at half maximum) were measured for several Si QDs at 10 K, with no clear correlation between emission energy and polarization. The initial part of PL decays was measured at room temperature for such oxide-embedded Si QDs, approximately several microseconds long. By providing direct access to a broad size range of isolated Si QDs on a wafer, this technique paves the way for the future fabrication of photonic structures with Si QDs, which can potentially be used as single-photon sources with a long coherence length.

Bright Silicon Nanocrystals from a Liquid Precursor: Quasi-Direct Recombination with High Quantum Yield

Silicon nanocrystals (SiNCs) with bright bandgap photoluminescence (PL) are of current interest for a range of potential applications, from solar windows to biomedical contrast agents. Here, we use the liquid precursor cyclohexasilane (Si₆H₁₂) for the plasma synthesis of colloidal SiNCs with exemplary core emission. Through size separation executed in an oxygen-shielded environment, we achieve PL quantum yields (QYs) approaching 70% while exposing intrinsic constraints on efficient core emission from smaller SiNCs. Time-resolved PL spectra of these fractions in response to femtosecond pulsed excitation reveal a zero-phonon radiative channel that anticorrelates with QY, which we model using advanced computational methods applied to a 2 nm SiNC. Our results offer additional insight into the photophysical interplay of the nanocrystal surface, quasi-direct recombination, and efficient SiNC core PL.

Poly(methyl methacrylate) Films with High Concentrations of Silicon Quantum Dots for Visibly Transparent Luminescent Solar Concentrators

Silicon quantum dots (Si QDs) are attractive, nontoxic luminophores for luminescent solar concentrators (LSCs). Here, we produced Si QD/poly(methyl methacrylate) (PMMA) films on glass by doctor-blading polymer solutions and achieved films with low light scattering at an order of magnitude higher Si QD weight fraction than has been achieved previously in the bulk. We suggest that the fast solidification rate of films as compared to slow bulk polymerization is an enabling factor in avoiding large agglomerates within the nanocomposites. Scanning electron microscopy confirmed that ∼100 nm or larger QD agglomerates exist in light-scattering films, and photoluminescence intensity measurements show that light scattering, if present, significantly reduces waveguiding efficiencies for LSCs. Nonscattering films fabricated in this work exhibit high ultraviolet absorption (>80%) paired with high visible transmission (>87%) and minimal visible haze (∼1%), making them well suited for semitransparent coatings for LSCs realized as solar harvesting windows.

Space charge-limited current transport in thin films of alkyl-functionalized silicon nanocrystals

We describe the fabrication and electrical characterization of all-silicon electrode devices to study the electronic properties of thin films of silicon nanocrystals (SiNCs). Planar, highly doped Si electrodes with contact separation of 200 nm were fabricated from silicon-on-insulator substrates, by combination of electron beam lithography and reactive ion etching. The gaps between the electrodes of height 110 nm were filled with thin-films of hexyl functionalized SiNCs (diameter 3 nm) from colloidal dispersions, via a pressure-transducing PDMS (polydimethylsiloxane) membrane. This novel approach allowed the formation of homogeneous SiNC films with precise control of their thickness in the range of 15-90 nm, practically without any voids or cracks. The measured conductance of the highly resistive SiNC films at high bias voltages up to 60 V scaled approximately linearly with gap width (5-50 μm) and gap filling height, with little device-to-device variance. We attribute the observed, pronounced hysteretic current-voltage (I-V) characteristics to space-charge-limited current transport, which-after about twenty cycles-eventually blocks the current almost completely. We propose our all-silicon device scheme and gap filling methodology as a platform to investigate charge transport in novel hybrid materials at the nanoscale, in particular in the high resistivity regime.

Quantum Dot-Based Simultaneous Multicolor Imaging

Quantum dots have attracted a great deal of attention among researchers in optical imaging because of their unique physicochemical properties. Their adjustable size allows quantum dots to emit visible fluorescence with different wavelengths excited by a single light source, allowing them to play an unmatched role in multitarget simultaneous multicolor imaging of tissues and cells compared with other molecular biotechnologies and traditional fluorescent materials. This technology affords real-time observation in situ of multiple biomarkers, allowing us to quantify their expression levels, and helping us to gain a deeper understanding of the interactions among biomolecules and the relationship between biomolecules and disease occurrence, progression, and prognosis. This has potential to aid in clinical diagnosis and treatment decision making.

Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect

Thin layers of silicon nanocrystals (SiNC) in oxide matrix with optimized parameters are fabricated by the plasma-enhanced chemical vapor deposition. These materials with SiNC sizes of about 4.5 nm and the SiO₂ barrier thickness of 3 nm reveal external quantum yield (QY) close to 50% which is near to the best chemically synthetized colloidal SiNC. Internal QY is determined using the Purcell effect, i.e. modifying radiative decay rate by the proximity of a high index medium in a special wedge-shape sample. For the first time we performed these experiments at variable temperatures. The complete optical characterization and knowledge of both internal and external QY allow to estimate the spectral distribution of the dark and bright NC populations within the SiNC ensemble. We show that SiNCs emitting at around 1.2-1.3 eV are mostly bright with internal QY reaching 80% at room temperature and being reduced by thermally activated non-radiative processes (below 100 K internal QY approaches 100%). The mechanisms of non-radiative decay are discussed based on their temperature dependence.

Si quantum dots enhanced hydrogen bonds networks of liquid water in a stimulated Raman scattering process

Stimulated Raman scattering (SRS) of silicon quantum dots (Si QD) water solutions of different sizes (2 and 5 nm) are investigated using Nd:YAG laser. Since strong and weak hydrogen bonds are formed by the charge transfer between water molecules and Si QDs, two SRS peaks of OH stretching vibrations of Si QDs solutions are observed in the forward direction. Simultaneously, characteristic feature peaks related to the interaction between OH groups and excess electrons are obtained in the backward SRS of 2 nm Si QDs solutions. The excess electrons induce a strong electrostatic field, leading to the transformation from water to an ice-VIII structure.

Silicon Quantum Dot Light Emitting Diode at 620 nm

Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m²), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.

Eco-Friendly Colloidal Quantum Dot-Based Luminescent Solar Concentrators

Luminescent solar concentrators (LSCs) have attracted significant attention as promising solar energy conversion devices for building integrated photovoltaic (PV) systems due to their simple architecture and cost-effective fabrication. Conventional LSCs are generally comprised of an optical waveguide slab with embedded emissive species and coupled PV cells. Colloidal semiconductor quantum dots (QDs) have been demonstrated as efficient emissive species for high-performance LSCs because of their outstanding optical properties including tunable absorption and emission spectra covering the ultraviolet/visible to near-infrared region, high photoluminescence quantum yield, large absorption cross sections, and considerable photostability. However, current commonly used QDs for high-performance LSCs consist of highly toxic heavy metals (i.e., cadmium and lead), which are fatal to human health and the environment. In this regard, it is highly desired that heavy metal-free and environmentally friendly QD-based LSCs are comprehensively studied. Here, notable advances and developments of LSCs based on unary, binary, and ternary eco-friendly QDs are presented. The synthetic approaches, optical properties of these eco-friendly QDs, and consequent device performance of QD-based LSCs are discussed in detail. A brief outlook pointing out the existing challenges and prospective developments of eco-friendly QD-based LSCs is provided, offering guidelines for future device optimizations and commercialization.

Emerging Functions of Nanostructured Porous Silicon-With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

Recent topics of application studies on porous silicon (PS) are reviewed here with a focus on the emissive properties of visible light, quasiballistic hot electrons, and acoustic wave. By exposing PS in solvents to pulse laser, size-controlled nc-Si dot colloids can be formed through fragmentation of the PS layer with a considerably higher yield than the conventional techniques such as laser ablation of bulk silicon and sol-gel precursor process. Fabricated colloidal samples show strong visible photoluminescence (~40% in quantum efficiency in the red band). This provides an energy- and cost-effective route for production of nc-Si quantum dots. A multiple-tunneling transport mode through nc-Si dot chain induces efficient quasiballistic hot electron emission from an nc-Si diode. Both the efficiency and the output electron energy dispersion are remarkably improved by using monolayer graphene as a surface electrode. Being a relatively low operating voltage device compatible with silicon planar fabrication process, the emitter is applicable to mask-less parallel lithography under an active matrix drive. It has been demonstrated that the integrated 100 × 100 emitter array is useful for multibeam lithography and that the selected emission pattern is delineated with little distortion. Highly reducing activity of emitted electrons is applicable to liquid-phase thin film deposition of metals (Cu) and semiconductors (Si, Ge, and SiGe). Due to an extremely low thermal conductivity and volumetric heat capacity of nc-Si layer, on the other hand, thermo-acoustic conversion is enhanced to a practical level. A temperature fluctuation produced at the surface of nc-Si layer is quickly transferred into air, and then an acoustic wave is emitted without any mechanical vibrations. The non-resonant and broad-band emissivity with low harmonic distortions makes it possible to use the emitter for generating audible sound under a full digital drive and reproducing complicated ultrasonic communication calls between mice.

Recent advances on fluorescent biomarkers of near-infrared quantum dots for in vitro and in vivo imaging

Luminescence probe has been broadly used for bio-imaging applications. Among them, near-infrared (NIR) quantum dots (QDs) are more attractive due to minimal tissue absorbance and larger penetration depth. Above said reasons allowed whole animal imaging without slice scan or dissection. This review describes in vitro and in vivo imaging of NIR QDs in the regions of 650-900 nm (NIR-I) and 1000-1450 nm (NIR-II). Also, we summarize the recent progress in bio-imaging and discuss the future trends of NIR QDs including group II-VI, IV-VI, I-VI, I-III-VI, III-V, and IV semiconductors.

The Role of Ligands in the Chemical Synthesis and Applications of Inorganic Nanoparticles

The design of nanoparticles is critical for their efficient use in many applications ranging from biomedicine to sensing and energy. While shape and size are responsible for the properties of the inorganic nanoparticle core, the choice of ligands is of utmost importance for the colloidal stability and function of the nanoparticles. Moreover, the selection of ligands employed in nanoparticle synthesis can determine their final size and shape. Ligands added after nanoparticle synthesis infer both new properties as well as provide enhanced colloidal stability. In this article, we provide a comprehensive review on the role of the ligands with respect to the nanoparticle morphology, stability, and function. We analyze the interaction of nanoparticle surface and ligands with different chemical groups, the types of bonding, the final dispersibility of ligand-coated nanoparticles in complex media, their reactivity, and their performance in biomedicine, photodetectors, photovoltaic devices, light-emitting devices, sensors, memory devices, thermoelectric applications, and catalysis.

A novel and facile synthesis of visible photoluminescence Si nanocrystals by room temperature mechanochemical disproportionation of SiO

Visible photoluminescence Si nanocrystals (Si NCs) are synthesized via a novel and facile room temperature mechanochemical disproportionation of SiO.

Femtosecond laser-induced size reduction and emission quantum yield enhancement of colloidal silicon nanocrystals: effect of laser ablation time

Colloidal silicon (Si) nanocrystals (NCs) with different sizes were successfully prepared by femtosecond laser ablation under different laser ablation time (LAT). The mean size decreases from 4.23 to 1.42 nm by increasing the LAT from 30 to 120 min. In combination with structural characterization, temperature-dependent photoluminescence (PL), time-resolved PL and PL excitation spectra, we attribute room-temperature blue emissions peaked at 405 and 430 nm to the radiative recombination of electron-hole pairs via the oxygen-deficient centers related to Si-C-H₂ and Si-O-Si bonds of colloidal Si NCs prepared in 1-octene, respectively. In particular, the measured PL quantum yield of colloidal Si NCs has been enhanced significantly from 23.6% to 55.8% by prolonging the LAT from 30 to 120 min.

The influence of conjugated alkynyl(aryl) surface groups on the optical properties of silicon nanocrystals: photoluminescence through in-gap states

Developing new methods, other than size and shape, for controlling the optoelectronic properties of semiconductor nanocrystals is a highly desired target. Here we demonstrate that the photoluminescence (PL) of silicon nanocrystals (SiNCs) can be tuned in the range 685-800 nm solely via surface functionalization with alkynyl(aryl) (phenylacetylene, 2-ethynylnaphthalene, 2-ethynyl-5-hexylthiophene) surface groups. Scanning tunneling microscopy/spectroscopy on single nanocrystals revealed the formation of new in-gap states adjacent to the conduction band edge of the functionalized SiNCs. PL red-shifts were attributed to emission through these in-gap states, which reduce the effective band gap for the electron-hole recombination process. The observed in-gap states can be associated with new interface states formed via (-Si-C≡C-) bonds in combination with conjugated molecules as indicated by ab initio calculations. In contrast to alkynyl(aryl)s, the formation of in-gap states and shifts in PL maximum of the SiNCs were not observed with aryl (phenyl, naphthalene, 2-hexylthiophene) and alkynyl (1-dodecyne) surface groups. These outcomes show that surface functionalization with alkynyl(aryl) molecules is a valuable tool to control the electronic structure and optical properties of SiNCs via tuneable interface states, which may enhance the performance of SiNCs in semiconductor devices.

Dissipative Self-Assembly of Photoluminescent Silicon Nanocrystals

Solutions of silicon nanocrystals (SiNCs) are used in a diverse range of applications because of their tunable photoluminescence, biocompatibility, and the abundance of Si. In dissipative supramolecular materials, self-assembly of molecules or nanoparticles is driven by a chemical reaction network that irreversible consumes fuel. The properties of the emerging structures are controlled by the kinetics of the underlying chemical reaction network. Herein, we demonstrate the dissipative self-assembly of photoluminescent SiNCs driven by a chemical fuel. A chemical reaction induces self-assembly of the water-soluble SiNCs. However, the assemblies are transient, and when the chemical reaction network runs out of fuel, the SiNCs disassemble. The lifetime of the assemblies is controlled by the amount of fuel added. As an application of the transient supramolecular material, we demonstrate that the platform can be used to control the delayed uptake of the nanocrystals by mammalian cells.

High Internal Emission Efficiency of Silicon Nanoparticles Emitting in the Visible Range

Light-emitting silicon nanoparticles (Si-NPs) are interesting for lighting applications due to their nontoxicity, chemical robustness, and photostability; however, they are not practically considered due to their low emission efficiencies. While large Si-NPs emitting in the red to infrared spectral region show ensemble emission quantum efficiencies up to 60%, the emission efficiencies of smaller Si-NPs, emitting in the visible spectral range, are far lower, typically below 10-20%. In this work, we test this efficiency limit by measuring for the first time the internal quantum efficiency (IQE), i.e., the higher bound of the emission quantum efficiency, considering only the emissive NPs within the ensemble, of Si-NPs emitting in the visible spectral range between 350 and 650 nm. On the basis of photoluminescence decay measurements in a Drexhage geometry, we show that Si-NPs with organic passivation (C:Si-NPs) can have high direct-bandgap-like radiative rates, which enable a high IQE over ∼50%. In this way, we demonstrate that Si-NPs can in principle be considered a competitive candidate as a phosphor in lighting applications and medical imaging also in the visible spectral range. Moreover, our findings show that the reason for the much lower ensemble emission efficiency is due to the fact that the ensemble consists of a low fraction of emissive NPs, most likely due to a low PL "blinking" duty cycle.

Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands

The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups-alkyls, amides, and alkoxides-on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative to alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands-not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals-are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. These results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.

A fabrication guide for planar silicon quantum dot heterostructures

We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

Creation and Annihilation of Charge Traps in Silicon Nanocrystals: Experimental Visualization and Spectroscopy

Recent studies have shown the presence of an amorphous surface layer in nominally crystalline silicon nanocrystals (SiNCs) produced by some of the most common synthetic techniques. The amorphous surface layer can serve as a source of deep charge traps, which can dramatically affect the electronic and photophysical properties of SiNCs. We present results of a scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) study of individual intragap states observed on the surfaces of hydrogen-passivated SiNCs deposited on the Au(111) surface. STS measurements show that intragap states can be formed reversibly when appropriate voltage-current pulses are applied to individual SiNCs. Analysis of STS spectra suggests that the observed intragap states are formed via self-trapping of charge carriers injected into SiNCs from the STM tip. Our results provide a direct visualization of the charge trap formation in individual SiNCs, a level of detail which until now had been achieved only in theoretical studies.

Changes of the absorption cross section of Si nanocrystals with temperature and distance

The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under modulated pumping. We clearly demonstrate that roughly doubling the barrier thickness (from ca. 1 to 2.2 nm) induces a decrease of the ACS by a factor of 1.5. An optimum separation barrier thickness of ca. 1.6 nm is calculated to maximize the PL intensity yield. This large variation of ACS values with barrier thickness is attributed to a modulation of either defect population states or of the efficiency of energy transfer between confined NC layers. An exponential decrease of the ACS with decreasing temperature down to 120 K can be explained by smaller occupation number of phonons and expansion of the band gap of Si NCs at low temperatures. This study clearly shows that the ACS of Si NCs cannot be considered as independent on experimental conditions and sample parameters.

Integrating Quantum Dots and Dielectric Mie Resonators: A Hierarchical Metamaterial Inheriting the Best of Both

Nanoscale dielectric resonators and quantum-confined semiconductors have enabled unprecedented control over light absorption and excited charges, respectively. In this work, we embed luminescent silicon nanocrystals (Si-NCs) into a 2D array of SiO₂ nanocylinders and experimentally prove a powerful concept: the resulting metamaterial preserves the radiative properties of the Si-NCs and inherits the spectrally selective absorption properties of the nanocylinders. This hierarchical approach provides increased photoluminescence (PL) intensity obtained without utilizing any lossy plasmonic components. We perform rigorous calculations and predict that a freestanding metamaterial enables tunable absorption peaks up to 50% in the visible spectrum, in correspondence with the nanocylinder Mie resonances and of the grating condition in the array. We experimentally detect extinction spectral peaks in the metamaterial, which drive enhanced absorption in the Si-NCs. Consequently, the metamaterial features increased PL intensity, obtained without affecting the PL lifetime, angular pattern, and extraction efficiency. Remarkably, our best-performing metamaterial shows +30% PL intensity achieved with a lower amount of Si-NCs, compared to an equivalent planar film without nanocylinders, resulting in a 3-fold average PL enhancement per Si-NC. The principle demonstrated here is general, and the Si-NCs can be replaced with other semiconductor quantum dots, rare-earth ions, or organic molecules. Similarly, the dielectric medium can be adjusted on purpose. This spectral selectivity of absorption paves the way for an effective light down-conversion scheme to increase the efficiency of solar cells. We envision the use of this hierarchical design for other efficient photovoltaic, photocatalytic, and artificial photosynthetic devices with spectrally selective absorption and enhanced efficiency.

Role of Surface Capping Molecule Polarity on the Optical Properties of Solution Synthesized Germanium Nanocrystals

The role surface capping molecules play in dictating the optical properties of semiconductor nanocrystals (NCs) is becoming increasingly evident. In this paper the role of surface capping molecule polarity on the optical properties of germanium NCs (Ge NCs) is explored. Capping molecules are split into two groups: nonpolar and polar. The NCs are fully characterized structurally and optically to establish the link between observed optical properties and surface capping molecules. Ge NC optical properties altered by surface capping molecule polarity include emission maximum, emission lifetime, quantum yield, and Stokes shift. For Ge NCs, this work also allows rational tuning of their optical properties through changes to surface capping molecule polarity, leading to improvements in emerging Ge based bioimaging and optoelectronic devices.

Multi-chromatic silicon nanocrystals

Silicon nanocrystals (SiNCs) have great potential to become environmental friendly alternatives to heavy-metal containing nanocrystals for applications including medical imaging, lighting and displays. SiNCs exhibit excellent photostability, non-toxicity and abundant resources, but their often reported inefficient and spectrally limited light emission seriously impair their applications. Here we demonstrate a new method that converts SiNCs into an efficient and robust multi-chromatic phosphor. Using ~15 keV electron-beam irradiation of oxide-capped SiNCs, we introduce several types of color centers into the nanocrystal's oxide shell with efficient blue, green and red emission bands, together yielding warm-white photoluminescence, even for a single SiNC. Introduced centers are not native to the original system and we relate them to known defects in silica. Unlike in the silica host, however, here the centers are efficiently optically excitable. Provided further optimization and up-scaling of this method, e-beam irradiated SiNCs can be of great interest as white phosphors for applications such as LEDs.

Abrupt Size Partitioning of Multimodal Photoluminescence Relaxation in Monodisperse Silicon Nanocrystals

Intrinsic constraints on efficient photoluminescence (PL) from smaller alkene-capped silicon nanocrystals (SiNCs) put limits on potential applications, but the root cause of such effects remains elusive. Here, plasma-synthesized colloidal SiNCs separated into monodisperse fractions reveal an abrupt size-dependent partitioning of multilevel PL relaxation, which we study as a function of temperature. Guided by theory and simulation, we explore the potential role of resonant phonon interactions with "minigaps" that emerge in the electronic density of states (DOS) under strong quantum confinement. Such higher-order structures can be very sensitive to SiNC surface chemistry, which we suggest might explain the common implication of surface effects in both the emergence of multimodal PL relaxation and the loss of quantum yield with decreasing nanocrystal size. Our results have potentially profound implications for optimizing the radiative recombination kinetics and quantum yield of smaller ligand-passivated SiNCs.

Probing silicon quantum dots by single-dot techniques

Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.

Sensitive detection of copper ions via ion-responsive fluorescence quenching of engineered porous silicon nanoparticles

Heavy metal pollution has been a problem since the advent of modern transportation, which despite efforts to curb emissions, continues to play a critical role in environmental pollution. Copper ions (Cu²⁺), in particular, are one of the more prevalent metals that have widespread detrimental ramifications. From this perspective, a simple and inexpensive method of detecting Cu²⁺ at the micromolar level would be highly desirable. In this study, we use porous silicon nanoparticles (NPs), obtained via anodic etching of Si wafers, as a basis for undecylenic acid (UDA)- or acrylic acid (AA)-mediated hydrosilylation. The resulting alkyl-terminated porous silicon nanoparticles (APS NPs) have enhanced fluorescence stability and intensity, and importantly, exhibit [Cu²⁺]-dependent quenching of fluorescence. After determining various aqueous sensing conditions for Cu²⁺, we demonstrate the use of APS NPs in two separate applications – a standard well-based paper kit and a portable layer-by-layer stick kit. Collectively, we demonstrate the potential of APS NPs in sensors for the effective detection of Cu²⁺.