1
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Pettine J, Padmanabhan P, Shi T, Gingras L, McClintock L, Chang CC, Kwock KWC, Yuan L, Huang Y, Nogan J, Baldwin JK, Adel P, Holzwarth R, Azad AK, Ronning F, Taylor AJ, Prasankumar RP, Lin SZ, Chen HT. Light-driven nanoscale vectorial currents. Nature 2024; 626:984-989. [PMID: 38326619 PMCID: PMC10901733 DOI: 10.1038/s41586-024-07037-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 01/05/2024] [Indexed: 02/09/2024]
Abstract
Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and information, as probes of material properties and dynamics1 and as a means of revealing2,3 or even inducing4,5 broken symmetries. Emerging methods for light-based current control5-16 offer particularly promising routes beyond the speed and adaptability limitations of conventional voltage-driven systems. However, optical generation and manipulation of currents at nanometre spatial scales remains a basic challenge and a crucial step towards scalable optoelectronic systems for microelectronics and information science. Here we introduce vectorial optoelectronic metasurfaces in which ultrafast light pulses induce local directional charge flows around symmetry-broken plasmonic nanostructures, with tunable responses and arbitrary patterning down to subdiffractive nanometre scales. Local symmetries and vectorial currents are revealed by polarization-dependent and wavelength-sensitive electrical readout and terahertz (THz) emission, whereas spatially tailored global currents are demonstrated in the direct generation of elusive broadband THz vector beams17. We show that, in graphene, a detailed interplay between electrodynamic, thermodynamic and hydrodynamic degrees of freedom gives rise to rapidly evolving nanoscale driving forces and charge flows under the extremely spatially and temporally localized excitation. These results set the stage for versatile patterning and optical control over nanoscale currents in materials diagnostics, THz spectroscopies, nanomagnetism and ultrafast information processing.
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Affiliation(s)
- Jacob Pettine
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA.
| | - Prashant Padmanabhan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Teng Shi
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | - Luke McClintock
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Department of Physics, University of California, Davis, Davis, CA, USA
| | - Chun-Chieh Chang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Kevin W C Kwock
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Fu Foundation School of Engineering and Applied Science, Columbia University, New York, NY, USA
| | - Long Yuan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Yue Huang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - John Nogan
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, USA
| | - Jon K Baldwin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | | | - Abul K Azad
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Filip Ronning
- Institute for Materials Science, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Antoinette J Taylor
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Rohit P Prasankumar
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Intellectual Ventures, Bellevue, WA, USA
| | - Shi-Zeng Lin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Hou-Tong Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA.
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2
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Semkin VA, Shabanov AV, Mylnikov DA, Kashchenko MA, Domaratskiy IK, Zhukov SS, Svintsov DA. Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts. NANO LETTERS 2023. [PMID: 37220075 DOI: 10.1021/acs.nanolett.3c01259] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Structural or crystal asymmetry is a necessary condition for the emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via p-n doping, which is a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in two-dimensional (2D) material flakes exploiting the geometrical nonequivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe2 with mutually orthogonal metal leads. Upon uniform illumination with linearly polarized light, the device demonstrates nonzero photocurrent which flips its sign upon 90° polarization rotation. The origin of zero-bias photocurrent lies in a polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair and selectively activates the internal photoeffect at the respective metal-PdSe2 Schottky junction. The proposed technology of contact engineering is independent of a particular light-detection mechanism and can be extended to arbitrary 2D materials.
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Affiliation(s)
- Valentin A Semkin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Aleksandr V Shabanov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Dmitry A Mylnikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Mikhail A Kashchenko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Ivan K Domaratskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Sergey S Zhukov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Dmitry A Svintsov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
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3
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Hong L, Wang L, Cai M, Yao Y, Guo X, Zhu Y. Sensitive Room-Temperature Graphene Photothermoelectric Terahertz Detector Based on Asymmetric Antenna Coupling Structure. SENSORS (BASEL, SWITZERLAND) 2023; 23:3249. [PMID: 36991960 PMCID: PMC10058478 DOI: 10.3390/s23063249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Revised: 03/07/2023] [Accepted: 03/16/2023] [Indexed: 06/19/2023]
Abstract
A highly sensitive room-temperature graphene photothermoelectric terahertz detector, with an efficient optical coupling structure of asymmetric logarithmic antenna, was fabricated by planar micro-nano processing technology and two-dimensional material transfer techniques. The designed logarithmic antenna acts as an optical coupling structure to effectively localize the incident terahertz waves at the source end, thus forming a temperature gradient in the device channel and inducing the thermoelectric terahertz response. At zero bias, the device has a high photoresponsivity of 1.54 A/W, a noise equivalent power of 19.8 pW/Hz1/2, and a response time of 900 ns at 105 GHz. Through qualitative analysis of the response mechanism of graphene PTE devices, we find that the electrode-induced doping of graphene channel near the metal-graphene contacts play a key role in the terahertz PTE response. This work provides an effective way to realize high sensitivity terahertz detectors at room temperature.
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Affiliation(s)
- Liang Hong
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Lanxia Wang
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Miao Cai
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yifan Yao
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xuguang Guo
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yiming Zhu
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China
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4
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Cai J, Griffin E, Guarochico-Moreira V, Barry D, Xin B, Huang S, Geim AK, Peeters FM, Lozada-Hidalgo M. Photoaccelerated Water Dissociation Across One-Atom-Thick Electrodes. NANO LETTERS 2022; 22:9566-9570. [PMID: 36449567 PMCID: PMC9756329 DOI: 10.1021/acs.nanolett.2c03701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 11/17/2022] [Indexed: 06/17/2023]
Abstract
Recent experiments demonstrated that interfacial water dissociation (H2O ⇆ H+ + OH-) could be accelerated exponentially by an electric field applied to graphene electrodes, a phenomenon related to the Wien effect. Here we report an order-of-magnitude acceleration of the interfacial water dissociation reaction under visible-light illumination. This process is accompanied by spatial separation of protons and hydroxide ions across one-atom-thick graphene and enhanced by strong interfacial electric fields. The found photoeffect is attributed to the combination of graphene's perfect selectivity with respect to protons, which prevents proton-hydroxide recombination, and to proton transport acceleration by the Wien effect, which occurs in synchrony with the water dissociation reaction. Our findings provide fundamental insights into ion dynamics near atomically thin proton-selective interfaces and suggest that strong interfacial fields can enhance and tune very fast ionic processes, which is of relevance for applications in photocatalysis and designing reconfigurable materials.
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Affiliation(s)
- Junhao Cai
- National
Graphene Institute, The University of Manchester, Manchester M13 9PL, U.K.
- Department
of Physics and Astronomy, The University
of Manchester, Manchester M13 9PL, U.K.
- College
of Advanced Interdisciplinary Studies, National
University of Defense Technology, Changsha, Hunan 410073, China
| | - Eoin Griffin
- National
Graphene Institute, The University of Manchester, Manchester M13 9PL, U.K.
- Department
of Physics and Astronomy, The University
of Manchester, Manchester M13 9PL, U.K.
| | - Victor Guarochico-Moreira
- National
Graphene Institute, The University of Manchester, Manchester M13 9PL, U.K.
- Department
of Physics and Astronomy, The University
of Manchester, Manchester M13 9PL, U.K.
- Escuela
Superior Politécnica del Litoral, ESPOL, Facultad de Ciencias Naturales y Matemáticas, P.O. Box 09-01-5863, Guayaquil, Ecuador
| | - Donnchadh Barry
- National
Graphene Institute, The University of Manchester, Manchester M13 9PL, U.K.
| | - Benhao Xin
- National
Graphene Institute, The University of Manchester, Manchester M13 9PL, U.K.
- Department
of Physics and Astronomy, The University
of Manchester, Manchester M13 9PL, U.K.
| | - Shiqi Huang
- National
Graphene Institute, The University of Manchester, Manchester M13 9PL, U.K.
- Department
of Physics and Astronomy, The University
of Manchester, Manchester M13 9PL, U.K.
| | - Andre K. Geim
- National
Graphene Institute, The University of Manchester, Manchester M13 9PL, U.K.
- Department
of Physics and Astronomy, The University
of Manchester, Manchester M13 9PL, U.K.
| | - Francois. M. Peeters
- Departement
Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Marcelo Lozada-Hidalgo
- National
Graphene Institute, The University of Manchester, Manchester M13 9PL, U.K.
- Department
of Physics and Astronomy, The University
of Manchester, Manchester M13 9PL, U.K.
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5
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Cortés E, Wendisch FJ, Sortino L, Mancini A, Ezendam S, Saris S, de S. Menezes L, Tittl A, Ren H, Maier SA. Optical Metasurfaces for Energy Conversion. Chem Rev 2022; 122:15082-15176. [PMID: 35728004 PMCID: PMC9562288 DOI: 10.1021/acs.chemrev.2c00078] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
Nanostructured surfaces with designed optical functionalities, such as metasurfaces, allow efficient harvesting of light at the nanoscale, enhancing light-matter interactions for a wide variety of material combinations. Exploiting light-driven matter excitations in these artificial materials opens up a new dimension in the conversion and management of energy at the nanoscale. In this review, we outline the impact, opportunities, applications, and challenges of optical metasurfaces in converting the energy of incoming photons into frequency-shifted photons, phonons, and energetic charge carriers. A myriad of opportunities await for the utilization of the converted energy. Here we cover the most pertinent aspects from a fundamental nanoscopic viewpoint all the way to applications.
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Affiliation(s)
- Emiliano Cortés
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany,
| | - Fedja J. Wendisch
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Luca Sortino
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Andrea Mancini
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Simone Ezendam
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Seryio Saris
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Leonardo de S. Menezes
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany,Departamento
de Física, Universidade Federal de
Pernambuco, 50670-901 Recife, Pernambuco, Brazil
| | - Andreas Tittl
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Haoran Ren
- MQ Photonics
Research Centre, Department of Physics and Astronomy, Macquarie University, Macquarie
Park, New South Wales 2109, Australia
| | - Stefan A. Maier
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany,School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia,Department
of Phyiscs, Imperial College London, London SW7 2AZ, United Kingdom,
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6
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Vangelidis I, Bellas DV, Suckow S, Dabos G, Castilla S, Koppens FHL, Ferrari AC, Pleros N, Lidorikis E. Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors. ACS PHOTONICS 2022; 9:1992-2007. [PMID: 35726242 PMCID: PMC9204831 DOI: 10.1021/acsphotonics.2c00100] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Indexed: 05/10/2023]
Abstract
Photonic integrated circuits (PICs) for next-generation optical communication interconnects and all-optical signal processing require efficient (∼A/W) and fast (≥25 Gbs-1) light detection at low (<pJbit-1) power consumption, in devices compatible with Si processing, so that the monolithic integration of electro-optical materials and electronics can be achieved consistently at the wafer scale. Graphene-based photodetectors can meet these criteria, thanks to their broadband absorption, ultra-high mobility, ultra-fast electron interactions, and strong photothermoelectric effect. High responsivities (∼ 1 A/W), however, have only been demonstrated in biased configurations, which introduce dark current, noise, and power consumption, while unbiased schemes, with low noise and zero consumption, have remained in the ∼ 0.1 A/W regime. Here, we consider the unbiased asymmetric configuration and show that optimized plasmonic enhanced devices can reach for both transverse-electric and transverse-magnetic modes (at λ = 1550 nm), ∼A/W responsivity, and ∼ 100 GHz operation speed at zero power consumption. We validate the model and material parameters by simulating experimental devices and derive analytical expressions for the responsivity. Our comprehensive modeling paves the way for efficient, fast, and versatile optical detection in PICs with zero power consumption.
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Affiliation(s)
- Ioannis Vangelidis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
| | - Dimitris V. Bellas
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Stephan Suckow
- AMO
GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Strasse 25, Aachen 52074, Germany
| | - George Dabos
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Sebastián Castilla
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Frank H. L. Koppens
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA
- Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Nikos Pleros
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Elefterios Lidorikis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- University
Research Center of Ioannina (URCI), Institute of Materials Science
and Computing, Ioannina 45110, Greece
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7
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Peyyety NA, Kumar S, Li MK, Dehm S, Krupke R. Tailoring Spectrally Flat Infrared Photodetection with Thickness-Controlled Nanocrystalline Graphite. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9525-9534. [PMID: 35138788 DOI: 10.1021/acsami.1c24306] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Graphene, a zero-gap semiconductor, absorbs 2.3% of incident photons in a wide wavelength range as a free-standing monolayer, whereas 50% is expected for ∼90 layers. Adjusting the layer number allows the tailoring of the photoresponse; however, controlling the thickness of multilayer graphene remains challenging on the wafer scale. Nanocrystalline graphene or graphite (NCG) can instead be grown with controlled thickness. We have fabricated photodetectors from NCG that are spectrally flat in the near-infrared to short-wavelength infrared region by tailoring the layer thicknesses. Transfer matrix simulations were used to determine the NCG thickness for maximum light absorption in the NCG layer on a silicon substrate. The extrinsic and intrinsic photoresponse was determined from 1100 to 2100 nm using chromatic aberration-corrected photocurrent spectroscopy. Diffraction-limited hyperspectral photocurrent imaging shows that the biased photoresponse is unipolar and homogeneous across the device area, whereas the short-circuit photoresponse gives rise to positive and negative photocurrents at the electrodes. The intrinsic photoresponses are wavelength-independent, indicative of bolometric and electrothermal photodetection.
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Affiliation(s)
- Naga Anirudh Peyyety
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Sandeep Kumar
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Min-Ken Li
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Simone Dehm
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Ralph Krupke
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
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8
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Optoelectronic mixing with high-frequency graphene transistors. Nat Commun 2021; 12:2728. [PMID: 33980859 PMCID: PMC8115296 DOI: 10.1038/s41467-021-22943-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2019] [Accepted: 03/29/2021] [Indexed: 02/03/2023] Open
Abstract
Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level (EF). At low EF (<130 meV), a positive photocurrent is generated, while at large EF (>130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.).
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9
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Abbasi M, Evans CI, Chen L, Natelson D. Single Metal Photodetectors Using Plasmonically-Active Asymmetric Gold Nanostructures. ACS NANO 2020; 14:17535-17542. [PMID: 33270432 DOI: 10.1021/acsnano.0c08035] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Plasmonic-based photodetectors are receiving increased attention because simple structural changes can make the photodetectors spectrally sensitive. In this study, asymmetric gold nanostructures are used as simple structures for photodetection via the photothermoelectric response. These single metal photodetectors use localized optical absorption from plasmon resonances of gold nanowires at desired wavelengths to generate temperature gradients. Combined with a geometry-dependent Seebeck coefficient, the result is a net electrical signal when the whole geometry is illuminated, with spectral sensitivity and polarization dependence from the plasmon resonances. We show experimental results and simulations of single-wavelength photodetectors at two wavelengths in the near IR range: 785 and 1060 nm. Based on simulation results and a model for the geometry-dependent Seebeck response, we demonstrate a photodetector structure that generates polarization-sensitive responses of opposite signs for the two wavelengths. The experimental photothermoelectric results are combined with simulations to infer the geometry dependence of the Seebeck response. These results can be used to increase the responsivity of these photodetectors further.
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Affiliation(s)
- Mahdiyeh Abbasi
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
| | - Charlotte I Evans
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Liyang Chen
- Applied Physics Graduate Program, Rice University, Houston, Texas 77005, United States
| | - Douglas Natelson
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
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10
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High-temperature differences in plasmonic broadband absorber on PET and Si substrates. Sci Rep 2020; 10:13279. [PMID: 32764675 PMCID: PMC7413524 DOI: 10.1038/s41598-020-70268-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2020] [Accepted: 05/15/2020] [Indexed: 11/08/2022] Open
Abstract
The characteristics of a plasmonic resonator with a metal-dielectric-metal structure is influenced by the size, shape, and spacing of the nanostructure. The plasmonic resonators can be used in various applications such as color filters, light emitting diodes, photodetectors, and broadband absorbers. In particular, broadband absorbers are widely used in thermophotovoltaics and thermoelectrics. To achieve a higher photothermal conversion efficiency, it is important to provoke a larger temperature difference in the absorber. The absorption and thermal conductance of the absorber has a great impact on the temperature difference, but in order to further improve the temperature difference of the absorber, the thermal conductivity of the substrate should be considered carefully. In this study, we designed Cr/SiO2/Cr absorbers on different substrates, i.e., polyethylene terephthalate (PET) and silicon. Although their optical properties do not change significantly, the temperature difference of the absorber on the PET substrate is considerably higher than that on the Si substrate under laser illumination, i.e., 164 K for ΔTPET and 3.7 K for ΔTSi, respectively. This is attributed to the thermal conductance of the substrate materials, which is confirmed by the thermal relaxation time. Moreover, the Seebeck coefficient of graphene on the absorber, 9.8 μV/K, is obtained by photothermoelectrics. The proposed Cr/SiO2/Cr structure provides a clear scheme to achieve high performance in photothermoelectric devices.
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11
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Onodera M, Kinoshita K, Moriya R, Masubuchi S, Watanabe K, Taniguchi T, Machida T. Cyclotron Resonance Study of Monolayer Graphene under Double Moiré Potentials. NANO LETTERS 2020; 20:4566-4572. [PMID: 32356662 DOI: 10.1021/acs.nanolett.0c01427] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report the first cyclotron resonance study of monolayer graphene under double-moiré potentials in which the crystal axis of graphene is nearly aligned to those of both the top and bottom hexagonal boron nitride (h-BN) layers. Under mid-infrared light irradiation, we observe cyclotron resonance absorption with the following unique features: (1) cyclotron resonance magnetic field BCR is entirely different from that of nonaligned monolayer graphene, (2) BCR exhibits strong electron-hole asymmetry, and (3) splitting of BCR is observed for |ν| < 1, with the split maximum at |ν| = 1, resulting in eyeglass-shaped trajectories. These features are well explained by considering the large bandgap induced by the double moiré potentials, the electron-hole asymmetry in the Fermi velocity, and the Fermi-level-dependent enhancement of spin gaps, which suggests a large electron-electron correlation contribution in this system.
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Affiliation(s)
- Momoko Onodera
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Kei Kinoshita
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Rai Moriya
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Satoru Masubuchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Tomoki Machida
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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12
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Lu X, Sun L, Jiang P, Bao X. Progress of Photodetectors Based on the Photothermoelectric Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902044. [PMID: 31483546 DOI: 10.1002/adma.201902044] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2019] [Revised: 07/06/2019] [Indexed: 06/10/2023]
Abstract
High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra-broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE-based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot-carrier transport into low-dimensional material-based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed.
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Affiliation(s)
- Xiaowei Lu
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Lin Sun
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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13
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Onodera M, Arai M, Masubuchi S, Kinoshita K, Moriya R, Watanabe K, Taniguchi T, Machida T. Electrical Control of Cyclotron Resonance in Dual-Gated Trilayer Graphene. NANO LETTERS 2019; 19:8097-8102. [PMID: 31658419 DOI: 10.1021/acs.nanolett.9b03280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Landau levels (LLs) of ABA-stacked trilayer graphene (TLG) are described as the combination of monolayer graphene-like LLs and bilayer graphene-like LLs. They are extremely sensitive to the applied perpendicular electric displacement field D. Here, we demonstrate the electrical control of cyclotron resonance (CR) in a dual-gated ABA-stacked TLG. Under the irradiation of mid-infrared light, we observed the photovoltage induced by the CR absorption through the photothermoelectric effect. The resonant magnetic field in CR is changed by applying D while keeping the carrier density constant. Numerical simulations based on the tight-binding model complement the experimental observations. We believe that the present study provides a boost to graphene-based photodetectors and photoemitters with an electrically tunable wavelength in mid-infrared to terahertz spectral ranges.
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Affiliation(s)
- Momoko Onodera
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Miho Arai
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Satoru Masubuchi
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Kei Kinoshita
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Rai Moriya
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 , Japan
| | - Tomoki Machida
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
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14
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Gul HZ, Sakong W, Ji H, Torres J, Yi H, Ghimire MK, Yoon JH, Yun MH, Hwang HR, Lee YH, Lim SC. Semimetallic Graphene for Infrared Sensing. ACS APPLIED MATERIALS & INTERFACES 2019; 11:19565-19571. [PMID: 31045342 DOI: 10.1021/acsami.9b00977] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Both photothermal and photovoltaic infrared (IR) detectors employ sensing materials that have an optical band gap. Different from these conventional materials, graphene has a conical band structure that imposes zero band gap. In this study, using the semimetallic multilayer graphene, IR detection at room temperature is realized. The relatively high Seebeck coefficient, ranging from 40 to 60 μV/K, compared to that of the metal, and the large optical absorption in the mid-IR region, in the wavelength range of 7-17 μm, enable graphene to detect IR without an absorber, which is essential for most IR detectors because the band gap of the sensing materials is much larger than the energy of IR and the incident IR can be absorbed directly by the sensing material. Thus, the incident IR can be absorbed directly by the sensing material in our device. The developed detector with a SiN membrane shows high responsivity and detectivity, which are 140 V/W and 5 × 108 cm·Hz1/2/W at 5 Hz, respectively. In addition, the IR sensor shows a response time of 600 μs. In the room-temperature operation of the IR sensor array without cooling, our sensors detect IR emitted from a human body and track the movement. The availability of large-area graphene in current technology opens new applications for metallic two-dimensional materials and a possibility for scale-up.
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Affiliation(s)
| | | | | | - Jorge Torres
- Department of Electrical and Computer Engineering , University of Pittsburgh , Pittsburgh , Pennsylvania 15261 , United States
| | | | | | - Jung Hyun Yoon
- R&D Division , WISE Control Inc. , 199, Sanggal-dong , Giheung-gu, Youngin-si , Gyeonggi-do 17097 , Republic of Korea
| | - Min Hee Yun
- Department of Electrical and Computer Engineering , University of Pittsburgh , Pittsburgh , Pennsylvania 15261 , United States
| | - Ha Ryong Hwang
- R&D Division , WISE Control Inc. , 199, Sanggal-dong , Giheung-gu, Youngin-si , Gyeonggi-do 17097 , Republic of Korea
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15
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Tasolamprou AC, Koulouklidis AD, Daskalaki C, Mavidis CP, Kenanakis G, Deligeorgis G, Viskadourakis Z, Kuzhir P, Tzortzakis S, Kafesaki M, Economou EN, Soukoulis CM. Experimental Demonstration of Ultrafast THz Modulation in a Graphene-Based Thin Film Absorber through Negative Photoinduced Conductivity. ACS PHOTONICS 2019; 6:720-727. [PMID: 30918912 PMCID: PMC6429433 DOI: 10.1021/acsphotonics.8b01595] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2018] [Indexed: 05/03/2023]
Abstract
We present an experimental demonstration and interpretation of an ultrafast optically tunable, graphene-based thin film absorption modulator for operation in the THz regime. The graphene-based component consists of a uniform CVD-grown graphene sheet stacked on an SU-8 dielectric substrate that is grounded by a metallic ground plate. The structure shows enhanced absorption originating from constructive interference of the impinging and reflected waves at the absorbing graphene sheet. The modulation of this absorption, which is demonstrated via a THz time-domain spectroscopy setup, is achieved by applying an optical pump signal, which modifies the conductivity of the graphene sheet. We report an ultrafast (on the order of few ps) absorption modulation on the order of 40% upon photoexcitation. Our results provide evidence that the optical pump excitation results in the degradation of the graphene THz conductivity, which is connected with the generation of hot carriers, the increase of the electronic temperature, and the dominant increase of the scattering rate over the carrier concentration as found in highly doped samples.
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Affiliation(s)
- Anna C. Tasolamprou
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
- E-mail:
| | | | - Christina Daskalaki
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
| | - Charalampos P. Mavidis
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
- Department
of Materials Science and Technology, University
of Crete, 70013 Heraklion, Crete, Greece
| | - George Kenanakis
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
| | - George Deligeorgis
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
| | | | - Polina Kuzhir
- Institute
for Nuclear Problems, Belarusian State University, Bobruiskaya 11, 220030 Minsk, Belarus
- Tomsk
State University, 36
Lenin Avenue, Tomsk 634050, Russia
| | - Stelios Tzortzakis
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
- Department
of Materials Science and Technology, University
of Crete, 70013 Heraklion, Crete, Greece
- Science
Program, Texas A&M University at Qatar, P.O. Box 23874, Doha, Qatar
| | - Maria Kafesaki
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
- Department
of Materials Science and Technology, University
of Crete, 70013 Heraklion, Crete, Greece
| | - Eleftherios N. Economou
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
- Department
of Physics, University of Crete, 70013 Heraklion, Crete, Greece
| | - Costas M. Soukoulis
- Institute
of Electronic Structure and Laser, FORTH, 70013 Heraklion, Crete, Greece
- Ames Laboratory
and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, United States
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16
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Chen M, Wang Y, Wen J, Chen H, Ma W, Fan F, Huang Y, Zhao Z. Annealing Temperature-Dependent Terahertz Thermal-Electrical Conversion Characteristics of Three-Dimensional Microporous Graphene. ACS APPLIED MATERIALS & INTERFACES 2019; 11:6411-6420. [PMID: 30648383 DOI: 10.1021/acsami.8b20095] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Three-dimensional microporous graphene (3DMG) possesses ultrahigh photon absorptivity and excellent photothermal conversion ability and shows great potential in energy storage and photodetection, especially for the not well-explored terahertz (THz) frequency range. Here, we report on the characterization of the THz thermal-electrical conversion properties of 3DMG with different annealing treatments. We observe distinct behavior of bolometric and photothermoelectric responses varying with annealing temperature. Resistance-temperature characteristics and thermoelectric power measurements reveal that marked charge carrier reversal occurs in 3DMG as the annealing temperature changes between 600 and 800 °C, which can be well explained by Fermi-level tuning associated with oxygen functional group evolution. Benefiting from the large specific surface area of 3DMG, it has an extraordinary capability of reaching thermal equilibrium quickly and exhibits a fast photothermal conversion with a time constant of 23 ms. In addition, 3DMG can serve as an ideal absorber to improve the sensitivity of THz detectors and we demonstrate that the responsivity of a carbon nanotube device could be enhanced by 12 times through 3DMG. Our work provides new insight into the physical characteristics of carrier transport and THz thermal-electrical conversion in 3DMG controlled by annealing temperature and opens an avenue for the development of highly efficient graphene-based THz devices.
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Affiliation(s)
- Meng Chen
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics , Tsinghua University , Beijing 100084 , China
| | - Yingxin Wang
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics , Tsinghua University , Beijing 100084 , China
| | - Jianguo Wen
- Nuctech Company Limited , Beijing 100084 , China
| | | | | | | | | | - Ziran Zhao
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics , Tsinghua University , Beijing 100084 , China
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17
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De Sanctis A, Mehew JD, Craciun MF, Russo S. Graphene-Based Light Sensing: Fabrication, Characterisation, Physical Properties and Performance. MATERIALS 2018; 11:ma11091762. [PMID: 30231517 PMCID: PMC6163333 DOI: 10.3390/ma11091762] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2018] [Revised: 09/12/2018] [Accepted: 09/13/2018] [Indexed: 12/18/2022]
Abstract
Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl 3 is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of devices with high gain and responsivity. In this work, we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse, the performance and possible future paths of investigation.
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Affiliation(s)
- Adolfo De Sanctis
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QL, UK.
| | - Jake D Mehew
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QL, UK.
| | - Monica F Craciun
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QL, UK.
| | - Saverio Russo
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QL, UK.
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18
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Limpert S, Burke A, Chen IJ, Anttu N, Lehmann S, Fahlvik S, Bremner S, Conibeer G, Thelander C, Pistol ME, Linke H. Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires. NANO LETTERS 2017; 17:4055-4060. [PMID: 28598628 DOI: 10.1021/acs.nanolett.7b00536] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
The photothermoelectric (PTE) effect uses nonuniform absorption of light to produce a voltage via the Seebeck effect and is of interest for optical sensing and solar-to-electric energy conversion. However, the utility of PTE devices reported to date has been limited by the need to use a tightly focused laser spot to achieve the required, nonuniform illumination and by their dependence upon the Seebeck coefficients of the constituent materials, which exhibit limited tunability and, generally, low values. Here, we use InAs/InP heterostructure nanowires to overcome these limitations: first, we use naturally occurring absorption "hot spots" at wave mode maxima within the nanowire to achieve sharp boundaries between heated and unheated subwavelength regions of high and low absorption, allowing us to use global illumination; second, we employ carrier energy-filtering heterostructures to achieve a high Seebeck coefficient that is tunable by heterostructure design. Using these methods, we demonstrate PTE voltages of hundreds of millivolts at room temperature from a globally illuminated nanowire device. Furthermore, we find PTE currents and voltages that change polarity as a function of the wavelength of illumination due to spatial shifting of subwavelength absorption hot spots. These results indicate the feasibility of designing new types of PTE-based photodetectors, photothermoelectrics, and hot-carrier solar cells using nanowires.
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Affiliation(s)
- Steven Limpert
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales , 2052 Sydney, Australia
| | - Adam Burke
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - I-Ju Chen
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - Nicklas Anttu
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - Sebastian Lehmann
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - Sofia Fahlvik
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - Stephen Bremner
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales , 2052 Sydney, Australia
| | - Gavin Conibeer
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales , 2052 Sydney, Australia
| | - Claes Thelander
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - Mats-Erik Pistol
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - Heiner Linke
- NanoLund and Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
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19
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De Sanctis A, Jones GF, Townsend NJ, Craciun MF, Russo S. An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2017; 88:055102. [PMID: 28571447 DOI: 10.1063/1.4982358] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, and new features in consumer electronics, safety devices, and medical equipment. The characterization of these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore, proof-of-concept devices are usually fabricated from micro-meter size flakes, requiring microscopy techniques to characterize them. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, and Raman, absorption, and PL spectroscopy in one single setup with full control over the polarization and wavelength of light. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs), and Si. The performance and resolution of each individual measurement technique is found to be equivalent to that of commercially available instruments. Contrary to nowadays' commercial systems, a significant advantage of the developed instrument is that for the first time the integration of a wide range of complementary optoelectronic and spectroscopy characterization techniques is demonstrated in a single compact unit. Our design offers a versatile solution to face the challenges imposed by the advent of atomically thin materials in optoelectronic devices.
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Affiliation(s)
- Adolfo De Sanctis
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Gareth F Jones
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Nicola J Townsend
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Monica F Craciun
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Saverio Russo
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
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20
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Léonard F, Spataru CD, Goldflam M, Peters DW, Beechem TE. Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors. Sci Rep 2017; 8:45873. [PMID: 28374842 PMCID: PMC5379207 DOI: 10.1038/srep45873] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2017] [Accepted: 03/03/2017] [Indexed: 11/24/2022] Open
Abstract
Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at the contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. We also show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one- and two-dimensional materials and devices.
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Affiliation(s)
- François Léonard
- Sandia National Laboratories, Livermore, CA, 94551, United States
| | | | - Michael Goldflam
- Sandia National Laboratories, Albuquerque, NM, 87185, United States
| | - David W Peters
- Sandia National Laboratories, Albuquerque, NM, 87185, United States
| | - Thomas E Beechem
- Sandia National Laboratories, Albuquerque, NM, 87185, United States
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21
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Fang J, Wang D, DeVault CT, Chung TF, Chen YP, Boltasseva A, Shalaev VM, Kildishev AV. Enhanced Graphene Photodetector with Fractal Metasurface. NANO LETTERS 2017; 17:57-62. [PMID: 27966986 DOI: 10.1021/acs.nanolett.6b03202] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Graphene has been demonstrated to be a promising photodetection material because of its ultrabroadband optical absorption, compatibility with CMOS technology, and dynamic tunability in optical and electrical properties. However, being a single atomic layer thick, graphene has intrinsically small optical absorption, which hinders its incorporation with modern photodetecting systems. In this work, we propose a gold snowflake-like fractal metasurface design to realize broadband and polarization-insensitive plasmonic enhancement in graphene photodetector. We experimentally obtain an enhanced photovoltage from the fractal metasurface that is an order of magnitude greater than that generated at a plain gold-graphene edge and such an enhancement in the photovoltage sustains over the entire visible spectrum. We also observed a relatively constant photoresponse with respect to polarization angles of incident light, as a result of the combination of two orthogonally oriented concentric hexagonal fractal geometries in one metasurface.
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Affiliation(s)
| | | | | | | | | | - Alexandra Boltasseva
- DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark , Lyngby, DK-2800, Denmark
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22
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Jadidi MM, Suess RJ, Tan C, Cai X, Watanabe K, Taniguchi T, Sushkov AB, Mittendorff M, Hone J, Drew HD, Fuhrer MS, Murphy TE. Tunable Ultrafast Thermal Relaxation in Graphene Measured by Continuous-Wave Photomixing. PHYSICAL REVIEW LETTERS 2016; 117:257401. [PMID: 28036204 DOI: 10.1103/physrevlett.117.257401] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2016] [Indexed: 06/06/2023]
Abstract
Hot electron effects in graphene are significant because of graphene's small electronic heat capacity and weak electron-phonon coupling, yet the dynamics and cooling mechanisms of hot electrons in graphene are not completely understood. We describe a novel photocurrent spectroscopy method that uses the mixing of continuous-wave lasers in a graphene photothermal detector to measure the frequency dependence and nonlinearity of hot-electron cooling in graphene as a function of the carrier concentration and temperature. The method offers unparalleled sensitivity to the nonlinearity, and probes the ultrafast cooling of hot carriers with an optical fluence that is orders of magnitude smaller than in conventional time-domain methods, allowing for accurate characterization of electron-phonon cooling near charge neutrality. Our measurements reveal that near the charge neutral point the nonlinear power dependence of the electron cooling is dominated by disorder-assisted collisions, while at higher carrier concentrations conventional momentum-conserving cooling prevails in the nonlinear dependence. The relative contribution of these competing mechanisms can be electrostatically tuned through the application of a gate voltage-an effect that is unique to graphene.
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Affiliation(s)
- M Mehdi Jadidi
- Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Ryan J Suess
- Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Cheng Tan
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Xinghan Cai
- Department of Physics, University of Washington, Seattle, Washington 98195, USA
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Andrei B Sushkov
- Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA
| | - Martin Mittendorff
- Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, Maryland 20742, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - H Dennis Drew
- Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA
| | - Michael S Fuhrer
- Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA
- School of Physics and Astronomy, Monash University, 3800 Victoria, Australia
| | - Thomas E Murphy
- Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, Maryland 20742, USA
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23
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König-Otto JC, Mittendorff M, Winzer T, Kadi F, Malic E, Knorr A, Berger C, de Heer WA, Pashkin A, Schneider H, Helm M, Winnerl S. Slow Noncollinear Coulomb Scattering in the Vicinity of the Dirac Point in Graphene. PHYSICAL REVIEW LETTERS 2016; 117:087401. [PMID: 27588881 DOI: 10.1103/physrevlett.117.087401] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2015] [Indexed: 06/06/2023]
Abstract
The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k directions pointing radially away from the Dirac point. Our study reveals, however, that, in almost intrinsic graphene, full thermalization in all directions relying on noncollinear scattering is much slower. For low photon energies, carrier-optical-phonon processes are strongly suppressed and Coulomb mediated noncollinear scattering is remarkably slow, namely on a ps time scale. This effect is very promising for infrared and THz devices based on hot carrier effects.
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Affiliation(s)
- J C König-Otto
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
- Technische Universität Dresden, 01062 Dresden, Germany
| | - M Mittendorff
- University of Maryland, College Park, Maryland 20742, USA
| | - T Winzer
- Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - F Kadi
- Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - E Malic
- Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - A Knorr
- Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - C Berger
- Georgia Institute of Technology, Atlanta, Georgia 30332, USA
- Institut Néel, CNRS-Université Alpes, 38042 Grenoble, France
| | - W A de Heer
- Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - A Pashkin
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
| | - H Schneider
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
| | - M Helm
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
- Technische Universität Dresden, 01062 Dresden, Germany
| | - S Winnerl
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
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Xu Y, Cheng C, Du S, Yang J, Yu B, Luo J, Yin W, Li E, Dong S, Ye P, Duan X. Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions. ACS NANO 2016; 10:4895-919. [PMID: 27132492 DOI: 10.1021/acsnano.6b01842] [Citation(s) in RCA: 115] [Impact Index Per Article: 14.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device performance and circuit design. In this review, we investigate the experimental efforts in interfacing 2D layers with 3D materials and analyze the properties of the heterojunctions formed between them. The contact resistivity of metal on graphene and related 2D materials deserves special attention, while the Schottky junctions formed between metal/2D semiconductor or graphene/3D semiconductor call for careful reconsideration of the physical models describing the junction behavior. The combination of 2D and 3D semiconductors presents a form of p-n junctions that have just marked their debut. For each type of the heterojunctions, the potential applications are reviewed briefly.
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Affiliation(s)
- Yang Xu
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
- Department of Chemistry and Biochemistry, University of California , Los Angeles, California 90095, United States
| | - Cheng Cheng
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Sichao Du
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Jianyi Yang
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Bin Yu
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Jack Luo
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Wenyan Yin
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Erping Li
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Shurong Dong
- College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Peide Ye
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47906, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California , Los Angeles, California 90095, United States
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25
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Near-field photocurrent nanoscopy on bare and encapsulated graphene. Nat Commun 2016; 7:10783. [PMID: 26916951 PMCID: PMC4773437 DOI: 10.1038/ncomms10783] [Citation(s) in RCA: 43] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2015] [Accepted: 01/20/2016] [Indexed: 01/20/2023] Open
Abstract
Optoelectronic devices utilizing graphene have demonstrated unique capabilities and performances beyond state-of-the-art technologies. However, requirements in terms of device quality and uniformity are demanding. A major roadblock towards high-performance devices are nanoscale variations of the graphene device properties, impacting their macroscopic behaviour. Here we present and apply non-invasive optoelectronic nanoscopy to measure the optical and electronic properties of graphene devices locally. This is achieved by combining scanning near-field infrared nanoscopy with electrical read-out, allowing infrared photocurrent mapping at length scales of tens of nanometres. Using this technique, we study the impact of edges and grain boundaries on the spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can readily be applied to encapsulated graphene devices. We observe charge build-up near the edges and demonstrate a solution to this issue. Graphene grain boundaries and charge inhomogeneities limit its electronic properties. Here the authors combine scanning near-field optical microscopy with electrical read-out to image these defects at the nanoscale under an encapsulation layer, and show that charges build up along the edges of the flake.
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26
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Echtermeyer TJ, Milana S, Sassi U, Eiden A, Wu M, Lidorikis E, Ferrari AC. Surface Plasmon Polariton Graphene Photodetectors. NANO LETTERS 2016; 16:8-20. [PMID: 26666842 DOI: 10.1021/acs.nanolett.5b02051] [Citation(s) in RCA: 51] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The combination of plasmonic nanoparticles and graphene enhances the responsivity and spectral selectivity of graphene-based photodetectors. However, the small area of the metal-graphene junction, where the induced electron-hole pairs separate, limits the photoactive region to submicron length scales. Here, we couple graphene with a plasmonic grating and exploit the resulting surface plasmon polaritons to deliver the collected photons to the junction region of a metal-graphene-metal photodetector. This gives a 400% enhancement of responsivity and a 1000% increase in photoactive length, combined with tunable spectral selectivity. The interference between surface plasmon polaritons and the incident wave introduces new functionalities, such as light flux attraction or repulsion from the contact edges, enabling the tailored design of the photodetector's spectral response. This architecture can also be used for surface plasmon biosensing with direct-electric-redout, eliminating the need of bulky optics.
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Affiliation(s)
- T J Echtermeyer
- Cambridge Graphene Centre, University of Cambridge , Cambridge CB3 0FA, United Kingdom
- School of Electrical & Electronic Engineering, University of Manchester , Manchester M13 9PL, United Kingdom
| | - S Milana
- Cambridge Graphene Centre, University of Cambridge , Cambridge CB3 0FA, United Kingdom
| | - U Sassi
- Cambridge Graphene Centre, University of Cambridge , Cambridge CB3 0FA, United Kingdom
| | - A Eiden
- Cambridge Graphene Centre, University of Cambridge , Cambridge CB3 0FA, United Kingdom
| | - M Wu
- Cambridge Graphene Centre, University of Cambridge , Cambridge CB3 0FA, United Kingdom
| | - E Lidorikis
- Department of Materials Science & Engineering, University of Ioannina , Ioannina 45110, Greece
| | - A C Ferrari
- Cambridge Graphene Centre, University of Cambridge , Cambridge CB3 0FA, United Kingdom
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27
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Xia Z, Li P, Wang Y, Song T, Zhang Q, Sun B. Solution-Processed Gold Nanorods Integrated with Graphene for Near-Infrared Photodetection via Hot Carrier Injection. ACS APPLIED MATERIALS & INTERFACES 2015; 7:24136-41. [PMID: 26468669 DOI: 10.1021/acsami.5b07299] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Graphene-based photodetectors have attracted wide interest due to their high-speed, wide-band photodetection and potential as highly energy-efficient integrated devices. However, the inherently low-absorption cross-section and nonselective spectra response hinder its utilization as a high-performance photodetector. Here, we report a solution-processed and high-spectral-selectivity photodetector based on a gold nanorods (Au NRs)-graphene heterojunction with near-infrared (NIR) detection. Au NRs are used as a subwavelength scattering source, and nanoantennas with wide light absorption range from ultraviolet to near-infrared via tuning their geometry. Photons couple into Au NRs, exciting resonant plasmas and generating hot carriers that pump into graphene, resulting in selective NIR photodetection. A flexible NIR photodetector is also demonstrated based on this simple structure. Au NRs can achieve variable resonance frequencies by the design of different aspect ratios as nanoantennae for graphene, which promises the selective amplifying of the photoresponsivity and enables highly specific detection.
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Affiliation(s)
- Zhouhui Xia
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou, 215123, PR China
| | - Pengfei Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou, 215123, PR China
| | - Yusheng Wang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou, 215123, PR China
| | - Tao Song
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou, 215123, PR China
| | - Qiao Zhang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou, 215123, PR China
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou, 215123, PR China
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28
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Voisin C, Plaçais B. Hot carriers in graphene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:160301. [PMID: 25838328 DOI: 10.1088/0953-8984/27/16/160301] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Affiliation(s)
- C Voisin
- Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Paris Diderot-Sorbonne Paris Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France
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