Design of hybrid sol-gel films for direct x-ray and electron beam nanopatterning

X-Ray Lithography for Nanofabrication: Is There a Future?

X-ray lithography has been first proposed almost 50 years ago, and the related LIGA process around 25 years ago. It is therefore a good time to make an analysis of the technique, with its pros and cons. In this perspective article, we describe X-ray lithography’s latest advancements. First, we report the improvement in the fabrication of the high aspect ratio and high-resolution micro/nanostructures. Then, we present the radiation-assisted synthesis and processing of novel materials for the next generation of functional devices. We finally draw our conclusion on the future prospects of the technique.

Comparison between the UV and X-ray Photosensitivities of Hybrid TiO2-SiO2 Thin Layers

The photo-induced effects on sol–gel-based organo TiO₂-SiO₂ thin layers deposited by the dip-coating technique have been investigated using two very different light sources: A light-emitting diode (LED) emitting in the UV (at 365 nm, 3.4 eV) and an X-ray tube producing 40 keV mean-energy photons. The impact of adding a photo-initiator (2,2-dimethoxy-2-phenylacetophenone-DMPA) on the sol–gel photosensitivity is characterized namely in terms of the photo-induced refractive index measured through M-line spectroscopy. Results show that both silica-titania sol–gel films with or without the photo-initiator are photosensitive to both photon sources. The induced refractive index values reveal several features where slightly higher refractive indexes are obtained for the sol–gel containing the photo-initiator. UV and X-ray-induced polymerization degrees are discussed using Fourier-transform infrared (FTIR) spectroscopy where the densification of hybrid TiO₂-SiO₂ layers is related to the consumption of the CH=C groups and to the decomposition of Si-OH and Si-O-CH₃ bonds. X-rays are more efficient at densifying the TiO₂-SiO₂ inorganic and organic network with respect to the UV photons. Hard X-ray photolithography, where no cracks or damages are observed after intense exposition, can be a promising technique to design submicronic-structure patterns on TiO₂-SiO₂ thin layers for the building of optical sensors.

Hard X-rays for processing hybrid organic-inorganic thick films

Hard X-rays, deriving from a synchrotron light source, have been used as an effective tool for processing hybrid organic-inorganic films and thick coatings up to several micrometres. These coatings could be directly modified, in terms of composition and properties, by controlled exposure to X-rays. The physico-chemical properties of the coatings, such as hardness, refractive index and fluorescence, can be properly tuned using the interaction of hard X-rays with the sol-gel hybrid films. The changes in the microstructure have been correlated especially with the modification of the optical and the mechanical properties. A relationship between the degradation rate of the organic groups and the rise of fluorescence from the hybrid material has been observed; nanoindentation analysis of the coatings as a function of the X-ray doses has shown a not linear dependence between thickness and film hardness.

Novel hybrid organic-inorganic spin-on resist for electron- or photon-based nanolithography with outstanding resistance to dry etching

A new spin-on alumina-based resist exhibits excellent performance in terms of both achievable lateral resolution and etch resistance in fluorine-based non-cryo-cooled dry etching processes. The resist has selectivity greater than 100:1 with respect to the underlying silicon during the etching process, patternability with various lithographic tools (UV, X-rays, electron beam, and nanoimprint lithography), and positive and negative tone behavior depending only on the developer chemistry.

Active diffraction gratings: development and tests

We present the realization and characterization of an active spherical diffraction grating with variable radius of curvature to be used in grazing-incidence monochromators. The device consists of a bimorph deformable mirror on the top of which a diffraction grating with laminar profile is realized by UV lithography. The experimental results show that the active grating can optimize the beam focalization of visible wavelengths through its rotation and focus accommodation.

Densification of sol-gel silica thin films induced by hard X-rays generated by synchrotron radiation

In this article the effects induced by exposure of sol-gel thin films to hard X-rays have been studied. Thin films of silica and hybrid organic-inorganic silica have been prepared via dip-coating and the materials were exposed immediately after preparation to an intense source of light of several keV generated by a synchrotron source. The samples were exposed to increasing doses and the effects of the radiation have been evaluated by Fourier transform infrared spectroscopy, spectroscopic ellipsometry and atomic force microscopy. The X-ray beam induces a significant densification on the silica films without producing any degradation such as cracks, flaws or delamination at the interface. The densification is accompanied by a decrease in thickness and an increase in refractive index both in the pure silica and in the hybrid films. The effect on the hybrid material is to induce densification through reaction of silanol groups but also removal of the organic groups, which are covalently bonded to silicon via Si-C bonds. At the highest exposure dose the removal of the organic groups is complete and the film becomes pure silica. Hard X-rays can be used as an efficient and direct writing tool to pattern coating layers of different types of compositions.

Fabrication of Advanced Functional Devices Combining Soft Chemistry with X-ray Lithography in One Step

Deep X-ray lithography combined with sol-gel techniques offers facile fabrication of controlled patterned films. Using sol-gel, different functional properties can be induced; deep X-ray lithography alters the functionality in the exposed regions. Miniaturized devices based on local property changes are easily fabricated: this technique requires no resist, enabling direct patterning of films in a one-step lithographic process.

Preparing patterned carbonaceous nanostructures directly by overexposure of PMMA using electron-beam lithography

The overexposure process of poly(methyl methacrylate) (PMMA) was studied in detail using electron-beam lithography. It was found that PMMA films could be directly patterned without development due to the electron-beam-induced collapse of PMMA macromolecular chains. By analyzing the evolution of surface morphologies and compositions of the overexposed PMMA films, it was also found that the transformation of PMMA from positive to negative resist was a carbonization process, so patterned carbonaceous nanostructures could be prepared directly by overexposure of PMMA using electron-beam lithography. This simple one-step process for directly obtaining patterned carbonaceous nanostructures has promising potential application as a tool to make masks and templates, nanoelectrodes, and building blocks for MEMS and nanophotonic devices.

Electron resist behavior of Pd hexadecanethiolate examined using X-ray photoelectron spectroscopy with nanometric lateral resolution

Electron resist behavior of Pd hexadecanethiolate is studied by varying the e-dosage from 2-280 muC.cm(-2). The e-beam exposed resist is characterized using energy dispersive spectroscopy, infrared spectroscopy, and X-ray photoelectron spectroscopy with nanometric lateral resolution. Electron beam exposure causes defects in the alkyl chain of the thiolate, giving the required solubility contrast during the developing step, thus qualifying the precursor as an e-beam resist. On exposure to the e-beam, the reduction of Pd(2+) to Pd(0) is observed, and the reduction increases with increasing e-dosage. The resist is highly sensitive, with the estimated sensitivity being 32 muC.cm(-2). Thermolysis at 250 degrees C leads to the formation of Pd nanoparticles, demonstrating the essential feature of a direct write resist for conducting patterns.