Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition

A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

Controllable growth of two-dimensional materials on noble metal substrates

Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.

Broadband Nonlinear Photonics in Few-Layer Borophene

In this paper, 2D borophene is synthesized through a liquid-phase exfoliation. The morphology and structure of as-prepared borophene are systemically analyzed, and the Z-scan is used to measure the nonlinear optical properties. It is found that the saturable absorber (SA) properties of borophene make it serve as an excellent broadband optical switch, which is strongly used for mode-locking in near- and mid-infrared laser systems. Ultrastable pulses with durations as short as 792 and 693 fs are successfully delivered at the central wavelengths of 1063 and 1560 nm, respectively. Furthermore, stable pulses at a wavelength of 1878 nm are demonstrated from a thulium mode-locked fiber laser based on the same borophene SA. This research reveals a significant potential for borophene used in lasers helping extending the frontiers of photonic technologies.

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films

In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV-vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 103 and long retention time of 1.2 × 103 s.

Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe₂ on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe₂/h-BN layer system can be transferred from the growth substrate onto SiO₂. The valence band structure of ML MoSe₂/h-BN/Rh(111) revealed by photoemission electron momentum microscopy ( kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level ( E_F), whereas the energy difference between K and Γ points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe₂, are well preserved in MoSe₂/h-BN heterostructures.

Smoothening of wrinkles in CVD-grown hexagonal boron nitride films

Hexagonal boron nitride (h-BN) is an ideal substrate for two-dimensional (2D) materials because of its unique electrically insulating nature, atomic smoothness and low density of dangling bonds. Although mechanical exfoliation from bulk crystals produces the most pristine flakes, scalable fabrication of devices is still dependent on other more direct synthetic routes. To date, the most utilized method to synthesize large-area h-BN films is by chemical vapor deposition (CVD) using catalytic metal substrates. However, a major drawback for such synthetic films is the manifestation of thermally-induced wrinkles, which severely disrupt the smoothness of the h-BN films. Here, we provide a detailed characterization study of the microstructure of h-BN wrinkles and demonstrate an effective post-synthesis smoothening route by thermal annealing in air. The smoothened h-BN film showed an improved surface smoothness by up to 66% and resulted in a much cleaner surface due to the elimination of polymer residues with no substantial oxidative damage to the film. The unwrinkling effect is attributed to the hydroxylation of the h-BN film as well as the substrate surface, resulting in a reduction in adhesion energy at the interface. Dehydroxylation occurs over time under ambient conditions at room temperature and the smoothened film can be restored back with the intrinsic properties of h-BN. This work provides an efficient route to achieve smoother h-BN films, which are beneficial for high-performance 2D heterostructure devices.

Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics

Among two dimensional (2D) van der Waals (vdW) layered materials such as graphene, which is used like a metal, and transition metal chalcogenides (TMdCs), which are used as semiconductors and metals, hexagonal boron nitride (hBN), which is used as an insulator, is ubiquitous as a building block to construct 2D vdW electronics for versatile tunneling devices. Monolayer and few-layer hBN films have been prepared with flake sizes of a few hundred micrometer via mechanical exfoliation and transfer methods. Another approach used to synthesize hBN films on a large scale is chemical vapor deposition (CVD). Although the single-crystal film growth of hBN on the wafer scale is the key to realizing realistic electronic applications, the various functionalities of hBN for 2D electronics are mostly limited to the microscale. Here, we review the recent progress for the large-area synthesis of hBN and other related vdW heterostructures via CVD, and the artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistances. The challenges and future perspectives for practical applications are also addressed.

Tunable absorption as multi-wavelength at infrared on graphene/hBN/Al grating structure

This work designs a graphene/hBN/Al grating anisotropic hybrid structure. Formed by strong coupling between plasmonic Magnetic polaritons (MPs) in the metal grating and phonon-plasmon polaritons, hybrid hyperbolic phonon-plasmon polaritons in the graphene/hBN film have been excited, resulting in three sharp, high absorption peaks, which are 0.75, 0.97 and 0.97, formed at 5.92 μm, 6.32 μm, and 7.64 μm respectively. The absorption mechanisms have been theoretically analyzed. Local electromagnetic field and power dissipation density are depicted for further elucidating the underlying mechanisms. The different structural parameters and chemical potential, which affect the absorption peak were discussed. These numerical results can provide potential application in the field of optical detection and optoelectronic.

Integrated High-Performance Infrared Phototransistor Arrays Composed of Nonlayered PbS-MoS2 Heterostructures with Edge Contacts

Molybdenum disulfide (MoS₂) has attracted a great deal of attention in optoelectronic applications due to its high mobility, low off-state current and high on/off ratio. However, its intrinsic large bandgap limits its application in infrared detection. Here, we have developed a high-performance infrared photodetector by integrating nonlayered PbS and layered MoS₂ nanostructures via van der Waals epitaxy. Density functional theory (DFT) calculations indicate that PbS nanoplates are in contact with MoS₂ edges through strong chemical hybridization, which is expected to offer a fast transmission path for carriers that enhances the response speed. The phototransistor exhibits a fast response (τ_rising = τ_decay = 7.8 ms) as well as high photoresponsivity (4.5 × 10⁴ A·W^-1) and I_light/I_dark (1.3 × 10²) in the near-infrared spectral region at room temperature. In particular, the detectivity (D*) is as high as 3 × 10¹³ Jones, which is even better than that of commercial Si and InGaAs photodetectors. Furthermore, by controlling the growth and microfabrication patterning, periodic device arrays of PbS-MoS₂ that are capable of infrared detection are achieved on Si/SiO₂ substrates. Our work provides a possible method for the integration of photodetector arrays on Si-based electronic devices and lays a solid foundation for the practical applications of MoS₂-based devices in the future.