Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy

Adsorption and dissociation of hydrogen molecules over S-vacancies in a Nb-doped MoS2monolayer

Motivated by the recent interest in the hydrogen energy, we have carried out a complete study of the catalytic activity of a defective molybdenum disulfide monolayer (MoS2) by means of density functional theory (DFT) calculations. The MoS2monolayer is characterized by a nonreactive basal plane. In principle, its catalytic activity is concentrated at the edges, but an alternative way to increase such activity is obtained by creating active sites where the molecules can dissociate. These defects can be easily produced experimentally by different techniques. In our study, we have performed an atomic, energetic and electronic analysis of a hydrogen molecule adsorbed on a MoS2monolayer. In a first step, we have found that the H2molecule remains physisorbed over both doped-free and Nb-doped MoS2monolayers, showing that the Nb atom does not increase the poor reactivity of the clean MoS2layer. Interestingly, our energetic results suggest that the vacancies will prefer to be formed close to the Nb atoms in the doped monolayer, but the small energy difference would allow the formation in non-doped like sites. Theoretically, we found out the conditions for the molecular dissociation on a S vacancy. In both cases, with and without Nb, the molecule should rotate from the original perpendicular position to an almost parallel orientation jumping an energetic barrier. After that, the atoms are separated binding to the Mo atoms around the missing S atom. Ourab initiomolecular dynamics simulations show that for low pressure conditions (using one single molecule in the system) the H2prefers to desorb from the vacancy, while for larger pressures (when additional H2molecules are added to the system) the molecule is finally dissociated on the vacancy. Our long simulations confirm the great stability of the structure with the two H atoms binding to the Mo atoms close to the vacancy. Finally, the inclusion of a third (or a fourth) H atom in the vacancy leads to the formation and desorption of a H2molecule, leaving one (or two) atoms in the vacancy.

Adsorption effects of acetone and acetonitrile on defected penta-PdSe2 nanoribbons: a DFT study

Using DFT calculations, the structural and electronic properties of the ZZ7 p-PdSe2 nanoribbons (ZZ7) with the four kinds of vacancy defects, including ZZ7-VPd, ZZ7-VSe, ZZ7-VPd+Se, and ZZ7-V2Se are studied, in which their stability, diverse geometries, and altered electronic properties are determined through the formation energies, optimal structural parameters, electronic band structures, and DOSs. Specifically, the formation energies of all studied systems show significant negative values around -3.9 eV, evidencing their good thermal stability. The geometries of four defective structures exhibit different diversification, whereas only the ZZ7-V2Se structure possesses the highly enhanced feature, identified as the most effective substrate for the acetone and acetonitrile adsorption. On the electronic behaviors, the ZZ7 band structure displays the nonmagnetic metallic characteristics that become the ferromagnetic half-metallic band structures for the ZZ7-VPd and ZZ7-VSe and the ferromagnetic semi-metallic band structures for the ZZ7-VPd+Se and ZZ7-V2Se. For adsorption of the acetone and acetonitrile on the ZZ7-V2Se structure, the energetic stability, adsorption sites, adsorption distances, charge transfers, and electronic characteristics of the adsorbed systems are determined by the adsorption energies, optimal adsorption sites, adsorption distances, Mulliken populations, and DOSs. The adsorption energies of the acetone- and acetonitrile-adsorbed ZZ7-V2Se systems display significant values at -1.2 eV and -0.86 eV at the preferable sites of 8 and 11, respectively, indicating their great adsorption ability. The adsorption mechanism of the acetone- and acetonitrile-adsorbed systems belongs to the physisorption owing to absence of chemical bonds, in which the bond lengths of the ZZ7-V2Se substrate show a very small deviation. Under the acetone and acetonitrile adsorptions, the ferromagnetic semi-metallic DOSs of the ZZ7-V2Se become the ferromagnetic half-metallic DOSs for the ZZ7-V2Se-acetone-8 and the ferromagnetic semiconducting DOSs for the ZZ7-V2Se-acetonitrile-11. Our systematic results can provide a complete understanding of the acetone- and acetonitrile adsorptions on the potential ZZ7-V2Se structure, which is very useful for nanosensor application.

Gas Sensing and Half-Metallic Materials Design Using Metal Embedded into S Vacancies in WS2 Monolayers: Adsorption of NO, CO, and O2 Molecules

The adsorption of CO, NO, and O2 molecules onto Cu, Ag, and Au atoms placed in the S vacancies of a WS2 monolayer was elucidated within dispersion-corrected density functional theory. The binding energies computed for embedded defects into S vacancies were 2.99 (AuS), 2.44 (AgS), 3.32 eV (CuS), 3.23 (Au2S2), 2.55 (Ag2S2), and 3.48 eV/atom (Cu2S2), respectively. The calculated diffusion energy barriers from an S vacancy to a nearby site for Cu, Ag, and Au were 2.29, 2.18, and 2.16 eV, respectively. Thus, the substitutional atoms remained firmly fixed at temperatures above 700 K. Similarly, the adsorption energies showed that nitric oxide and carbon oxide molecules exhibited stronger chemisorption than O2 molecules on any of the metal atoms (Au, Cu, or Ag) placed in the S vacancies of the WS2 monolayer. Therefore, the adsorption of O2 did not compete with NO or CO adsorption and did not displace them. The density of states showed that a WS2 monolayer modified with a Cu, Au, or Ag atom could be used to design sensing devices, based on electronic or magnetic properties, for atmospheric pollutants. More interestingly, the adsorption of CO changed only the electronic properties of the MoS2-AuS monolayer, which could be used for sensing applications. In contrast, the O2 molecule was chemisorbed more strongly than CO or NO on Au2S2, Cu2S2, or Ag2S2 placed into di-S vacancies. Thus, if the experimental system is exposed to air, the low quantities of O2 molecules present should result in the oxidation of the metallic atoms. Furthermore, the O2 molecules adsorbed on WS2-Au2S2 and WS2-CuS introduced a half-metallic behavior, making the system suitable for applications in spintronics.

Liquid Shear Exfoliation of MoS2: Preparation, Characterization, and NO2-Sensing Properties

2D materials possess great potential to serve as gas-sensing materials due to their large, specific surface areas and strong surface activities. Among this family, transition metal chalcogenide materials exhibit different properties and are promising candidates for a wide range of applications, including sensors, photodetectors, energy conversion, and energy storage. Herein, a high-shear mixing method has been used to produce multilayered MoS2 nanosheet dispersions. MoS2 thin films were manufactured by vacuum-assisted filtration. The structural morphology of MoS2 was studied using ς-potential, UV-visible, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectroscopy (RS). The spectroscopic and microscopic analyses confirm the formation of a high-crystalline MoS2 thin film with good inter-sheet connectivity and relative thickness uniformity. The thickness of the MoS2 layer is measured to be approximately 250 nm, with a nanosheet size of 120 nm ± 40 nm and a number of layers between 6 and 9 layers. Moreover, the electrical characteristics clearly showed that the MoS2 thin film exhibits good conductivity and a linear I-V curve response, indicating good ohmic contact between the MoS2 film and the electrodes. As an example of applicability, we fabricated chemiresistive sensor devices with a MoS2 film as a sensing layer. The performance of the MoS2-chemiresistive sensor for NO2 was assessed by being exposed to different concentrations of NO2 (1 ppm to 10 ppm). This sensor shows a sensibility to low concentrations of 1 ppm, with a response time of 114 s and a recovery time of 420 s. The effect of thin-film thickness and operating temperatures on sensor response was studied. The results show that thinner film exhibits a higher response to NO2; the response decreases as the working temperature increases.

Substitutional Coinage Metals as Promising Defects for Adsorption and Detection of Gases on MoS2 Monolayers: A Computational Approach

Defective molybdenum disulfide (MoS₂) monolayers (MLs) modified with coinage metal atoms (Cu, Ag and Au) embedded in sulfur vacancies are studied at a dispersion-corrected density functional level. Atmospheric constituents (H₂, O₂ and N₂) and air pollutants (CO and NO), known as secondary greenhouse gases, are adsorbed on up to two atoms embedded into sulfur vacancies in MoS₂ MLs. The adsorption energies suggest that the NO (1.44 eV) and CO (1.24 eV) are chemisorbed more strongly than O₂ (1.07 eV) and N₂ (0.66 eV) on the ML with a cooper atom substituting for a sulfur atom. Therefore, the adsorption of N₂ and O₂ does not compete with NO or CO adsorption. Besides, NO adsorbed on embedded Cu creates a new level in the band gap. In addition, it was found that the CO molecule could directly react with the pre-adsorbed O₂ molecule on a Cu atom, forming the complex OOCO, via the Eley-Rideal reaction mechanism. The adsorption energies of CO, NO and O₂ on Au_2S2, Cu_2S2 and Ag_2S2 embedded into two sulfur vacancies were competitive. Charge transference occurs from the defective MoS₂ ML to the adsorbed molecules, oxidizing the later ones (NO, CO and O₂) since they act as acceptors. The total and projected density of states reveal that a MoS₂ ML modified with copper, gold and silver dimers could be used to design electronic or magnetic devices for sensing applications in the adsorption of NO, CO and O₂ molecules. Moreover, NO and O₂ molecules adsorbed on MoS₂-Au₂s₂ and MoS₂-Cu₂s₂ introduce a transition from metallic to half-metallic behavior for applications in spintronics. These modified monolayers are expected to exhibit chemiresistive behavior, meaning their electrical resistance changes in response to the presence of NO molecules. This property makes them suitable for detecting and measuring NO concentrations. Also, modified materials with half-metal behavior could be beneficial for spintronic devices, particularly those that require spin-polarized currents.

Ferromagnetism in Defected TMD (MoX2, X = S, Se) Monolayer and Its Sustainability under O2, O3, and H2O Gas Exposure: DFT Study

Spin-polarized density-functional theory (DFT) has been employed to study the effects of atmospheric gases on the electronic and magnetic properties of a defective transition-metal dichalcogenide (TMD) monolayer, MoX₂ with X = S or Se. This study focuses on three single vacancies: (i) molybdenum "V_Mo"; (ii) chalcogenide "V_X"; and (iii) di-chalcogenide "V_X2". Five different samples of sizes ranging from 4 × 4 to 8 × 8 primitive cells (PCs) were considered in order to assess the effect of vacancy-vacancy interaction. The results showed that all defected samples were paramagnetic semiconductors, except in the case of V_Mo in MoSe₂, which yielded a magnetic moment of 3.99 μ_B that was independent of the sample size. Moreover, the samples of MoSe₂ with V_Mo and sizes of 4 × 4 and 5 × 5 PCs exhibited half-metallicity, where the spin-up state becomes conductive and is predominantly composed of dxy and dz2 orbital mixing attributed to Mo atoms located in the neighborhood of V_Mo. The requirement for the establishment of half-metallicity is confirmed to be the provision of ferromagnetic-coupling (FMC) interactions between localized magnetic moments (such as V_Mo). The critical distance for the existence of FMC is estimated to be dc≅ 16 Å, which allows small sample sizes in MoSe₂ to exhibit half-metallicity while the FMC represents the ground state. The adsorption of atmospheric gases (H₂O, O₂, O₃) can drastically change the electronic and magnetic properties, for instance, it can demolish the half-metallicity characteristics. Hence, the maintenance of half-metallicity requires keeping the samples isolated from the atmosphere. We benchmarked our theoretical results with the available data in the literature throughout our study. The conditions that govern the appearance/disappearance of half-metallicity are of great relevance for spintronic device applications.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

Local Structure of Sulfur Vacancies on the Basal Plane of Monolayer MoS2

The nature of the S-vacancy is central to controlling the electronic properties of monolayer MoS₂. Understanding the geometric and electronic structures of the S-vacancy on the basal plane of monolayer MoS₂ remains elusive. Here, operando S K-edge X-ray absorption spectroscopy shows the formation of clustered S-vacancies on the basal plane of monolayer MoS₂ under reaction conditions (H₂ atmosphere, 100-600 °C). First-principles calculations predict spectral fingerprints consistent with the experimental results. The Mo K-edge extended X-ray absorption fine structure shows the local structure as coordinatively unsaturated Mo with 4.1 ± 0.4 S atoms as nearest neighbors (above 400 °C in an H₂ atmosphere). Conversely, the 6-fold Mo-Mo coordination in the crystal remains unchanged. Electrochemistry confirms similar active sites for hydrogen evolution. The identity of the S-vacancy defect on the basal plane of monolayer MoS₂ is herein elucidated for applications in optoelectronics and catalysis.

Defects, band bending and ionization rings in MoS2

Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS₂however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy and STS to study embedded sulphur vacancies in bulk MoS₂crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending. The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature.

Effect of point defects and nanopores on the fracture behaviors in single-layer MoS2 nanosheets

Point defects and nanopores are inevitable and particularly noticeable in single-layer (SL) MoS2. Molecular dynamics (MD) simulations have been done to comprehensively study the influences of point defects and nanopores on tensile deformation behaviors of SLMoS2 nanosheets, and the dependences of fracture properties on defect type and concentration, pore size, temperature and strain rate are discussed. The formation energy of S vacancy (VS) is the lowest one, but that of VMoS6 is the highest one, corresponding to the highest and lowest fracture stress, respectively. The local stress concentration around point defects and nanopores might lead to the early bond breaking and subsequent nucleation of cracks and brittle fracture upon tensile loading. A modified Griffith criterion is proposed to describe the defect concentration and pore size dependent fracture stress and strain. These findings provide us an important guideline for the structural design of 2D materials in future applications.

Dopants and grain boundary effects in monolayer MoS2: a first-principles study

The structural, electronic and magnetic properties of large area chemical vapor deposited monolayer MoS2 rely significantly on the presence of grain boundaries (GBs) and defects. In this study, first-principles calculations were performed to investigate the electronic and magnetic properties of transition metal doped MoS2 GBs. The experimentally observed 60° tilt GBs were demonstrated with four different atomic configurations and the nonmagnetic 4|8ud GB has the lowest formation energy among the considered models. Further calculations of 4|8ud GBs doped with TMs, such as V, Cr, Mn, Fe, Co and Ni, indicate that dopants can significantly lower the formation energies of the doped GBs compared to the perfect monolayer MoS2 by occupying the GB region instead of within the grains. Magnetism can be achieved in doped GB systems by careful defect engineering. CoMo, MnMo and Niint in 4|8ud GBs are predicted to be magnetic and simultaneously energetically favorable. The electron coupling between the doped TM and surrounding GB atoms is expected to induce magnetism and high electron mobilities into the systems. This study may pave the way for optimal design of MoS2-based electronic and spintronic devices.

Intrinsic Defects in MoS2 Grown by Pulsed Laser Deposition: From Monolayers to Bilayers

Pulsed laser deposition (PLD) can be considered a powerful method for the growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) into van der Waals heterostructures. However, despite significant progress, the defects in 2D TMDs grown by PLD remain largely unknown and yet to be explored. Here, we combine atomic resolution images and first-principles calculations to reveal the atomic structure of defects, grains, and grain boundaries in mono- and bilayer MoS₂ grown by PLD. We find that sulfur vacancies and Mo_S antisites are the predominant point defects in 2D MoS₂. We predict that the aforementioned point defects are thermodynamically favorable under a Mo-rich/S-poor environment. The MoS₂ monolayers are polycrystalline and feature nanometer size grains connected by a high density of grain boundaries. In particular, the coalescence of nanometer grains results in the formation of 180° mirror twin boundaries consisting of distinct 4- and 8-membered rings. We show that PLD synthesis of bilayer MoS₂ results in various structural symmetries, including AA' and AB, but also turbostratic with characteristic moiré patterns. Moreover, we report on the experimental demonstration of an electron beam-driven transition between the AB and AA' stacking orientations in bilayer MoS₂. These results provide a detailed insight into the atomic structure of monolayer MoS₂ and the role of the grain boundaries on the growth of bilayer MoS₂, which has importance for future applications in optoelectronics.

Observation of single-defect memristor in an MoS2 atomic sheet

Non-volatile resistive switching, also known as memristor¹ effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems^2-9. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide^10,11 and hexagonal boron nitride¹² sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling^10,13. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS₂ as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems^2,3,11.

Unravelling the effect of sulfur vacancies on the electronic structure of the MoS2 crystal

Molybdenum disulfide (MoS₂) is one of the two-dimensional layered semiconductor transition metal dichalcogenides (TMDCs) with great potential in electronics, optoelectronics, and spintronic devices. Sulfur vacancies in MoS₂ are the most prevalent defects. However, the effect of sulfur vacancies on the electronic structure of MoS₂ is still in dispute. Here we experimentally and theoretically investigated the effect of sulfur vacancies in MoS₂. The vacancies were intentionally introduced by thermal annealing of MoS₂ crystals in a vacuum environment. Angle-resolved photoemission spectroscopy (ARPES) was used directly to observe the electronic structure of the MoS₂ single crystals. The experimental result distinctly revealed the appearance of an occupied defect state just above the valence band maximum (VBM) and an upward shift of the VBM after creating sulfur vacancies. In addition, density functional theory (DFT) calculations also confirmed the existence of the occupied defect state close to the VBM as well as two deep unoccupied states induced by the sulfur vacancies. Our results provide evidence to contradict that sulfur vacancies indicate the origin of n-type behaviour in MoS₂. This work provides a rational strategy for tuning the electronic structures of MoS₂.

Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe_{2}

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe_{2} intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V_{W} dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V_{W} dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V_{W} dopants.

Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS2

Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS₂ by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS₂ upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.

Synthesis of High-Quality Monolayer MoS2 by Direct Liquid Injection

We report the synthesis of high-quality single monolayer MoS₂ samples using a novel technique that utilizes direct liquid injection (DLI) for the delivery of precursors. The DLI system vaporizes a liquid consisting of a selected precursor dissolved in a solvent into small, micron-sized droplets in an expansion chamber maintained at a selected temperature and pressure, before delivery to the deposition chamber. We demonstrate the synthesis of monolayer MoS₂ on SiO₂/Si substrates using the DLI technique with film quality superior to exfoliated samples or those grown by traditional tube furnace chemical vapor deposition (CVD) methods. Photoluminescence measurements of DLI monolayers exhibit consistently brighter emission, narrower line width, and higher emission energy than their exfoliated and CVD counterparts. Conductive atomic force microscopy identifies a defect density of 8.3 × 10¹¹/cm² in DLI MoS₂, lower than the measured density in CVD material and nearly an order of magnitude improvement over the exfoliated MoS₂ investigated under the same conditions. The DLI method is directly applicable to many other van der Waals materials, which require the use of challenging low vapor pressure precursors, to the growth of alloys, and sequential growths of dissimilar materials leading to van der Waals heterostructures.

S-Vacancy induced indirect-to-direct band gap transition in multilayer MoS2

Two-dimensional (2D) MoS₂ has a tunable band structure.

Point Defects and Localized Excitons in 2D WSe2

Identifying the point defects in 2D materials is important for many applications. Recent studies have proposed that W vacancies are the predominant point defect in 2D WSe₂, in contrast to theoretical studies, which predict that chalcogen vacancies are the most likely intrinsic point defects in transition metal dichalcogenide semiconductors. We show using first-principles calculations, scanning tunneling microscopy (STM), and scanning transmission electron microscopy experiments that W vacancies are not present in our CVD-grown 2D WSe₂. We predict that O-passivated Se vacancies (O_Se) and O interstitials (O_ins) are present in 2D WSe₂, because of facile O₂ dissociation at Se vacancies or due to the presence of WO₃ precursors in CVD growth. These defects give STM images in good agreement with experiment. The optical properties of point defects in 2D WSe₂ are important because single-photon emission (SPE) from 2D WSe₂ has been observed experimentally. While strain gradients funnel the exciton in real space, point defects are necessary for the localization of the exciton at length scales that enable photons to be emitted one at a time. Using state-of-the-art GW-Bethe-Salpeter-equation calculations, we predict that only O_ins defects give localized excitons within the energy range of SPE in previous experiments, making them a likely source of previously observed SPE. No other point defects (O_Se, Se vacancies, W vacancies, and Se_W antisites) give localized excitons in the same energy range. Our predictions suggest ways to realize SPE in related 2D materials and point experimentalists toward other energy ranges for SPE in 2D WSe₂.

Kinetics of Graphene and 2D Materials Growth

During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

Engineering Point-Defect States in Monolayer WSe2

Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe₂ by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first-principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on-off switching by the odd-even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggests the possibility of gate-programmable magnetic moments at the defects.

Why Chemical Vapor Deposition Grown MoS2 Samples Outperform Physical Vapor Deposition Samples: Time-Domain ab Initio Analysis

Two-dimensional transition metal dichalcogenides (TMDs) have drawn strong attention due to their unique properties and diverse applications. However, TMD performance depends strongly on material quality and defect morphology. Experiments show that samples grown by chemical vapor deposition (CVD) outperform those obtained by physical vapor deposition (PVD). Experiments also show that CVD samples exhibit vacancy defects, while antisite defects are frequently observed in PVD samples. Our time-domain ab initio study demonstrates that both antisites and vacancies accelerate trapping and nonradiative recombination of charge carriers, but antisites are much more detrimental than vacancies. Antisites create deep traps for both electrons and holes, reducing energy gaps for recombination, while vacancies trap primarily holes. Antisites also perturb band-edge states, creating significant overlap with the trap states. In comparison, vacancy defects overlap much less with the band-edge states. Finally, antisites can create pairs of electron and hole traps close to the Fermi energy, allowing trapping by thermal activation from the ground state and strongly contributing to charge scattering. As a result, antisites accelerate charge recombination by more than a factor of 8, while vacancies enhance the recombination by less than a factor of 2. Our simulations demonstrate a general principle that missing atoms are significantly more benign than misplaced atoms, such as antisites and adatoms. The study rationalizes the existing experimental data, provides theoretical insights into the diverse behavior of different classes of defects, and generates guidelines for defect engineering to achieve high-performance electronic, optoelectronic, and solar-cell devices.

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe₂) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe₂/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼10⁷), high current density (1-10 μA·μm^-1), and good field-effect transistor mobility (∼30 cm²·V^-1·s^-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

Au cluster adsorption on perfect and defective MoS2 monolayers: structural and electronic properties

The adsorption of Au_n (n = 1-4) clusters on perfect and defective MoS₂ monolayers is studied using density functional theory. For the pristine MoS₂ monolayer, our results show that the electrons are transferred from the support to the adsorbed Au clusters, thus a p-doping effect is achieved in the pristine MoS₂ monolayer by the Au cluster adsorption, which is in good agreement with the experimental findings. The adsorption of Au clusters can introduce mid-gap states, which modify the electronic and magnetic properties of the systems. The adsorbates containing an odd number of Au atoms can introduce a spin magnetic moment of 1 μ_B into the perfect MoS₂ monolayer, while those systems containing an even number of Au atoms are spin-unpolarized. Two categories of defects, i.e., a single S vacancy and Mo antisite defect with one Mo atom replacing one S atom, are considered for the defective monolayer MoS₂. Compared with the pristine MoS₂ monolayer, the adsorption energies for Au clusters are significantly increased for the MoS₂ monolayer with a single S vacancy, and there are more electrons transferred from the MoS₂ monolayer with an S vacancy to the Au clusters. The mid-gap states and odd-even oscillation magnetic behavior can also be observed when Au clusters are adsorbed on the MoS₂ monolayer with an S vacancy. For those systems of Au clusters on MoS₂ monolayers with Mo antisite defects, the adsorption energies as well as the magnitude and the direction of transferred charge are similar to those for the MoS₂ monolayer with an S vacancy. The spin-polarizations appear in all systems with Mo antisite defects. Our investigations suggest that the electronic and magnetic properties of MoS₂ nanosheets can be effectively modulated by the adsorption of Au clusters.

Sulfur Adatom and Vacancy Accelerate Charge Recombination in MoS2 but by Different Mechanisms: Time-Domain Ab Initio Analysis

Two-dimensional transition metal dichalcogenides (TMDs) have appeared on the horizon of materials science and solid-state physics due to their unique properties and diverse applications. TMD performance depends strongly on material quality and defect morphology. Calculations predict that sulfur adatom and vacancy are among the most energetically favorable defects in MoS₂ with vacancies frequently observed during chemical vapor deposition. By performing ab initio quantum dynamics calculations we demonstrate that both adatom and vacancy accelerate nonradiative charge carrier recombination but this happens through different mechanisms. Surprisingly, holes never significantly populate the shallow trap state created by the sulfur adatom because the trap is strongly localized and decoupled from free charges. Charge recombination bypasses the hole trap. Instead, it occurs directly between free electron and hole. The recombination is faster than in pristine MoS₂ because the adatom strongly perturbs the MoS₂ layer, breaks its symmetry, and allows more phonon modes to couple to the electronic subsystem. In contrast, the sulfur vacancy accelerates charge recombination by the traditional mechanism involving charge trapping, followed by recombination. This is because the hole and electron traps created by the vacancy are much less localized than the hole trap created by the adatom. Because the sulfur adatom accelerates charge recombination by a factor of 7.9, compared to 1.7 due to vacancy, sulfur adatoms should be strongly avoided. The generated insights highlight the diverse behavior of different types of defects, reveal unexpected features, and provide the mechanistic understanding of charge dynamics needed for tailoring TMD properties and building high-performance devices.

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Few- and single-layer MoS₂ host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using different sources of MoS₂-a natural one and one prepared at high pressure and high temperature-and different substrates bringing varying amounts of charged impurities and by separating the contributions of internal strain and doping in Raman spectra. Photoluminescence unveils various optically active excitonic complexes. We discover a defect-bound state having a low binding energy of 20 meV that does not appear sensitive to strain and doping, unlike charged excitons. Conversely, the defect does not significantly dope or strain MoS₂. Scanning tunneling microscopy and density functional theory simulations point to substitutional atoms, presumably individual nitrogen atoms at the sulfur site. Our work shows the way to a systematic understanding of the effect of external and internal fields on the optical properties of two-dimensional materials.

Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

Understanding the electronic contact between molybdenum disulfide (MoS₂) and metal electrodes is vital for the realization of future MoS₂-based electronic devices. Natural MoS₂ has the drawback of a high density of both metal and sulfur defects and impurities. We present evidence that subsurface metal-like defects with a density of ∼10¹¹ cm^-2 induce negative ionization of the outermost S atom complex. We investigate with high-spatial-resolution surface characterization techniques the effect of these defects on the local conductance of MoS₂. Using metal nanocontacts (contact area < 6 nm²), we find that subsurface metal-like defects (and not S-vacancies) drastically decrease the metal/MoS₂ Schottky barrier height as compared to that in the pristine regions. The magnitude of this decrease depends on the contact metal. The decrease of the Schottky barrier height is attributed to strong Fermi level pinning at the defects. Indeed, this is demonstrated in the measured pinning factor, which is equal to ∼0.1 at defect locations and ∼0.3 at pristine regions. Our findings are in good agreement with the theoretically predicted values. These defects provide low-resistance conduction paths in MoS₂-based nanodevices and will play a prominent role as the device junction contact area decreases in size.

Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

Structural defects in the molybdenum disulfide (MoS₂) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS₂ electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in monolayered MoS₂ to tune its structural defects. We demonstrate that the electronic properties of single layer MoS₂ can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS₂ flakes. The successful incorporation of hydrogen in MoS₂ leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS₂ confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS₂ hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.

Adsorption of small inorganic molecules on a defective MoS2monolayer

Different molecules physisorbed, chemisorbed or dissociated on a defective MoS₂layer.

Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability

Layered semiconductor compounds represent alternative electronic materials beyond graphene. WSe₂ is one of the two-dimensional materials with wide potential in opto- and nanoelectronics and is often used to construct novel three-dimensional architectures with new functionalities. Here, we report the topography and the electronic property of the WSe₂ characterized by means of scanning tunneling microscopy and spectroscopy (STM and STS), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma mass spectrometry. The STM images reveal the presence of atomic-size imperfections and a variation in the electronic structure caused by the presence of defects and impurities below the detection limit of XPS. Both STS and photoemission reveal a spatial variation in the Fermi level position. The analysis of the core levels indicates the presence of different doping levels. The presence of a large concentration of defects and impurities has a strong impact on the electronic properties of the WSe₂ surface. Our findings demonstrate that the growth of controllable and high quality two-dimensional materials at nanometer scale is one of the most challenging tasks that requires further attention.