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Liu S, Yu JX, Zhang E, Li Z, Sun Q, Zhang Y, Cao L, Li L, Zhao M, Leng P, Cao X, Li A, Zou J, Kou X, Zang J, Xiu F. Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi 2Te 4 Films. NANO LETTERS 2024; 24:16-25. [PMID: 38109350 DOI: 10.1021/acs.nanolett.3c02926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
The anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator. However, the origin of its intriguing AHE behaviors remains elusive. Here, we demonstrate the Berry curvature-dominated intrinsic AHE in wafer-scale MnBi2Te4 films. By applying back-gate voltages, we observe an ambipolar conduction and n-p transition in ∼7-layer MnBi2Te4, where a quadratic relation between the AHE resistance and longitudinal resistance suggests its intrinsic AHE nature. In particular, for ∼3-layer MnBi2Te4, the AHE sign can be tuned from pristine negative to positive. First-principles calculations unveil that such an AHE reversal originated from the competing Berry curvature between oppositely polarized spin-minority-dominated surface states and spin-majority-dominated inner bands. Our results shed light on the underlying physical mechanism of the intrinsic AHE and provide new perspectives for the unconventional sign-tunable AHE.
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Affiliation(s)
- Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | - Jie-Xiang Yu
- School of Physical Science and Technology, Soochow University, Suzhou 215006, China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | - Qiang Sun
- Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia
- Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072, Australia
| | - Yong Zhang
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Liwei Cao
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Lun Li
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Minhao Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | - Pengliang Leng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | - Xiangyu Cao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | - Ang Li
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia
- Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072, Australia
| | - Xufeng Kou
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, New Hampshire 03824, United States
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
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Hu X, He X, Guo Z, Kamiya T, Wu J. Antisite-Defects Control of Magnetic Properties in MnSb 2Te 4. ACS NANO 2024; 18:738-749. [PMID: 38127649 DOI: 10.1021/acsnano.3c09064] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The intrinsic magnetic topological materials Mn(Sb/Bi)2n+2Te3n+4 have attracted extensive attention due to their topological quantum properties. Although, the Mn-Sb/Bi antisite defects have been frequently reported to exert significant influences on both magnetism and band topology, their formation mechanism and the methods to manipulate their distribution and concentration remain elusive. Here, we present MnSb2Te4 as a typical example and demonstrate that Mn-Sb antisite defects and magnetism can be tuned by controlling the crystal growth conditions. The cooling rate is identified as the primary key parameter. Magnetization and chemical analysis demonstrate that a slower cooling rate would lead to a higher Mn concentration, a higher magnetic transition temperature, and a higher saturation moment. Further analysis indicates that the Mn content at the original Mn site (MnMn, 3a site) varies more significantly with the cooling rate than the Mn content at the Sb site (MnSb, 6c site). Based on experimental observations, magnetic phase diagrams regarding MnMn and MnSb concentrations are constructed. With the assistance of first-principles calculations, it is demonstrated that the Mn-Sb mixing states primarily result from the mixing entropy and the growth kinetics. The present findings offer valuable insights into defects engineering for preparation of two-dimensional quantum materials.
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Affiliation(s)
- Xinmeng Hu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xinyi He
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8501, Japan
| | - Zhilin Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Toshio Kamiya
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8501, Japan
| | - Jiazhen Wu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Micro/Nano-Porous Functional Materials, Southern University of Science and Technology, Shenzhen 518055, China
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Luo J, Tong Q, Jiang Z, Bai H, Wu J, Liu X, Xie S, Ge H, Zhao Y, Liu Y, Hong M, Shen D, Zhang Q, Liu W, Tang X. Exploring the Epitaxial Growth Kinetics and Anomalous Hall Effect in Magnetic Topological Insulator MnBi 2Te 4 Films. ACS NANO 2023; 17:19022-19032. [PMID: 37732876 DOI: 10.1021/acsnano.3c04626] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/22/2023]
Abstract
The discovery of MnBi2Te4-based intrinsic magnetic topological insulators has fueled tremendous interest in condensed matter physics, owing to their potential as an ideal platform for exploring the quantum anomalous Hall effect and other magnetism-topology interactions. However, the fabrication of single-phase MnBi2Te4 films remains a common challenge in the research field. Herein, we present an effective and simple approach for fabricating high-quality, near-stoichiometric MnBi2Te4 films by directly matching the growth rates of intermediate Bi2Te3 and MnTe. Through systematic experimental studies and thermodynamic calculations, we demonstrate that binary phases of Bi2Te3 and MnTe are easily formed during film growth, and the reaction of Bi2Te3 + MnTe → MnBi2Te4 represents the rate-limiting step among all possible reaction paths, which could result in the presence of Bi2Te3 and MnTe impurity phases in the grown MnBi2Te4 films. Moreover, Bi2Te3 and MnTe impurities introduce negative and positive anomalous Hall (AH) components, respectively, in the AH signals of MnBi2Te4 films. Our work suggests that further manipulation of growth parameters should be the essential route for fabricating phase-pure MnBi2Te4 films.
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Affiliation(s)
- Jiangfan Luo
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Qiwei Tong
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Zhicheng Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Hui Bai
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xiaolin Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
| | - Sen Xie
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
| | - Haoran Ge
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yan Zhao
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
- The Institute of Technological Sciences, Wuhan University, Wuhan 430070, China
| | - Yong Liu
- Department of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Min Hong
- Centre for Future Materials, and School of Engineering, University of Southern Queensland, Springfield, Queensland 4300, Australia
| | - Dawei Shen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Wei Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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