Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

Study of an MoS 2 phototransistor using a compact numerical method enabling detailed analysis of 2D material phototransistors

Research on two-dimensional material-based phototransistors has recently become a topic of great interest. However, the high number of design features, which impact the performance of these devices, and the multi-physical nature of the device operation make the accurate analysis of these devices a challenge. Here, we present a simple yet effective numerical framework to overcome this challenge. The one-dimensional framework is constructed on the drift-diffusion equations, Poisson's equation, and wave propagation in multi-layered medium formalism. We apply this framework to study phototransistors made from monolayer molybdenum disulfide ( MoS 2 ) placed on top of a back-gated silicon-oxide-coated silicon substrate. Numerical results, which show good agreement with the experimental results found in the literature, emphasize the necessity of including the inhomogeneous background for accurately calculating device metrics such as quantum efficiency and bandwidth. For the first time in literature, we calculate the phase noise of these phototransistors, which is a crucial performance metric for many applications where precise timing and synchronization are critical. We determine that applying a low drain-to-source voltage is the key requirement for low phase noise.

Glassy-like Transients in Semiconductor Nanomaterials

Glassy behavior is manifested by three time-dependent characteristics of a dynamic physical property. Such behaviors have been found in the electrical conductivity transients of various disordered systems, but the mechanisms that yield the glassy behavior are still under intensive debate. The focus of the present work is on the effect of the quantum confinement (QC) and the Coulomb blockade (CB) effects on the experimentally observed glassy-like behavior in semiconductor nanomaterials. Correspondingly, we studied the transient electrical currents in semiconductor systems that contain CdSe or Si nanosize crystallites, as a function of that size and the ambient temperature. In particular, in contrast to the more commonly studied post-excitation behavior in electronic glassy systems, we have also examined the current transients during the excitation. This has enabled us to show that the glassy behavior is a result of the nanosize nature of the studied systems and thus to conclude that the observed characteristics are sensitive to the above effects. Following this and the temperature dependence of the transients, we derived a more detailed macroscopic and microscopic understanding of the corresponding transport mechanisms and their glassy manifestations. We concluded that the observed electrical transients must be explained not only by the commonly suggested principle of the minimization of energy upon the approach to equilibrium, as in the mechanical (say, viscose) glass, but also by the principle of minimal energy dissipation by the electrical current which determines the percolation network of the electrical conductivity. We further suggest that the deep reason for the glassy-like behavior that is observed in the electrical transients of the nanomaterials studied is the close similarity between the localization range of electrons due to the Coulomb blockade and the caging range of the uncharged atomic-size particles in the classical mechanical glass. These considerations are expected to be useful for the understanding and planning of semiconductor nanodevices such as corresponding quantum dot memories and quantum well MOSFETs.

Enabling Waveguide Optics in Rhombohedral-Stacked Transition Metal Dichalcogenides with Laser-Patterned Grating Couplers

Waveguides play a key role in the implementation of on-chip optical elements and, therefore, lie at the heart of integrated photonics. To add the functionalities of layered materials to existing technologies, dedicated fabrication protocols are required. Here, we build on laser writing to pattern grating structures into bulk noncentrosymmetric transition metal dichalcogenides with grooves as sharp as 250 nm. Using thin flakes of 3R-MoS2 that act as waveguides for near-infrared light, we demonstrate the functionality of the grating couplers with two complementary experiments: first, nano-optical imaging is used to visualize transverse electric and magnetic modes, whose directional outcoupling is captured by finite element simulations. Second, waveguide second-harmonic generation is demonstrated by grating-coupling femtosecond pulses into the slabs in which the radiation partially undergoes frequency doubling throughout the propagation. Our work provides a straightforward strategy for laser patterning of van der Waals crystals, demonstrates the feasibility of compact frequency converters, and examines the tuning knobs that enable optimized coupling into layered waveguides.

Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D Monolayers

Two-dimensional (2D) semiconductors have generated considerable attention for high-performance electronics and optoelectronics. However, to date, it is still challenging to mechanically exfoliate large-area and continuous monolayers while retaining their intrinsic properties. Here, we report a simple dry exfoliation approach to produce large-scale and continuous 2D monolayers by using a Ag film as the peeling tape. Importantly, the conducting Ag layer could be converted into AgOx nanoparticles at low annealing temperature, directly decoupling the conducting Ag with the underlayer 2D monolayers without involving any solution or etching process. Electrical characterization of the monolayer MoS2 transistor shows a decent carrier mobility of 42 cm2 V-1 s-1 and on-state current of 142 μA/μm. Finally, a plasmonic enhancement photodetector could be simultaneously realized due to the direct formation of Ag nanoparticles arrays on MoS2 monolayers, without complex approaches for nanoparticle synthesis and integration processes, demonstrating photoresponsivity and detectivity of 6.3 × 105 A/W and 2.3 × 1013 Jones, respectively.

SnS2/MoS2 van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect

Photoresponsivity is a fundamental parameter used to quantify the ability of photoelectric conversion of a photodetector device. High-responsivity photodetectors are essential for numerous optoelectronic applications. Due to the strong light-matter interactions and the high carrier mobility, two-dimensional (2D) materials are promising candidates for the next-generation photodetectors. However, poor light absorption, lack of photoconductive gain, and the interfacial recombination lead to the relatively low responsivity of 2D photodetectors. The photogating effect, which extends the lifetime of photoexcited carriers, provides a simple approach to enhance responsivity in photodetector devices. Here, the O2 plasma treatment introduced surface traps on the SnS2 surface, leading to a gate-tunable photogating effect in SnS2/MoS2 heterojunctions. The heterojunction device exhibits an ultrahigh responsibility of up to 28 A/W. Moreover, the photodetector possesses a wide spectral photoresponse spanning from 300 to 1100 nm and a high specific detectivity (D*) of 4 × 1011 Jones under a 532 nm laser at VDS = 1 V. These results demonstrate that O2 plasma treatment is an efficient and simple avenue to achieve photogating effects, which can be employed to enhance the performance of van der Waals heterostructure photodetector devices and make them suitable for future integration into advanced electronic and optoelectronic systems.

Biodegradable albumen dielectrics for high-mobility MoS2 phototransistors

This work demonstrates the fabrication and characterization of single-layer MoS2 field-effect transistors using biodegradable albumen (chicken eggwhite) as gate dielectric. By introducing albumen as an insulator for MoS2 transistors high carrier mobilities (up to ~90 cm2 V-1 s-1) are observed, which is remarkably superior to that obtained with commonly used SiO2 dielectric which we attribute to ionic gating due to the formation of an electric double layer in the albumen MoS2 interface. In addition, the investigated devices are characterized upon illumination, observing responsivities of 4.5 AW-1 (operated in photogating regime) and rise times as low as 52 ms (operated in photoconductivity regime). The presented study reveals the combination of albumen with van der Waals materials for prospective biodegradable and biocompatible optoelectronic device applications. Furthermore, the demonstrated universal fabrication process can be easily adopted to fabricate albumen-based devices with any other van der Waals material.

High photoresponsivity MoS2phototransistor through enhanced hole trapping HfO2gate dielectric

Phototransistor using 2D semiconductor as the channel material has shown promising potential for high sensitivity photo detection. The high photoresponsivity is often attributed to the photogating effect, where photo excited holes are trapped at the gate dielectric interface that provides additional gate electric field to enhance channel charge carrier density. Gate dielectric material and its deposition processing conditions can have great effect on the interface states. Here, we use HfO2gate dielectric with proper thermal annealing to demonstrate a high photoresponsivity MoS2phototransistor. When HfO2is annealed in H2atmosphere, the photoresponsivity is enhanced by an order of magnitude as compared with that of a phototransistor using HfO2without annealing or annealed in Ar atmosphere. The enhancement is attributed to the hole trapping states introduced at HfO2interface through H2annealing process, which greatly enhances photogating effect. The phototransistor exhibits a very large photoresponsivity of 1.1 × 107A W-1and photogain of 3.3 × 107under low light illumination intensity. This study provides a processing technique to fabricate highly sensitive phototransistor for low optical power detection.

Edge contacts accelerate the response of MoS2 photodetectors

We use a facile plasma etching process to define contacts with an embedded edge geometry for multilayer MoS₂ photodetectors. Compared to the conventional top contact geometry, the detector response time is accelerated by more than an order of magnitude by this action. We attribute this improvement to the higher in-plane mobility and direct contacting of the individual MoS₂ layers in the edge geometry. With this method, we demonstrate electrical 3 dB bandwidths of up to 18 MHz which is one of the highest values reported for pure MoS₂ photodetectors. We anticipate that this approach should also be applicable to other layered materials, guiding a way to faster next-generation photodetectors.

Highly Trustworthy In-Sensor Cryptography for Image Encryption and Authentication

The prevailing transmission of image information over the Internet of Things demands trustworthy cryptography for high security and privacy. State-of-the-art security modules are usually physically separated from the sensory terminals that capture images, which unavoidably exposes image information to various attacks during the transmission process. Here we develop in-sensor cryptography that enables capturing images and producing security keys in the same hardware devices. The generated key inherently binds to the captured images, which gives rise to highly trustworthy cryptography. Using the intrinsic electronic and optoelectronic characteristics of the 256 molybdenum disulfide phototransistor array, we can harvest electronic and optoelectronic binary keys with a physically unclonable function and further upgrade them into multiple-state ternary and double-binary keys, exhibiting high uniformity, uniqueness, randomness, and coding capacity. This in-sensor cryptography enables highly trustworthy image encryption to avoid passive attacks and image authentication to prevent unauthorized editions.

Laser-Synthesized 2D-MoS2 Nanostructured Photoconductors

The direct laser synthesis of periodically nanostructured 2D transition metal dichalcogenide (2D-TMD) films, from single source precursors, is presented here. Laser synthesis of MoS₂ and WS₂ tracks is achieved by localized thermal dissociation of Mo and W thiosalts, caused by the strong absorption of continuous wave (c.w.) visible laser radiation by the precursor film. Moreover, within a range of irradiation conditions we have observed occurrence of 1D and 2D spontaneous periodic modulation in the thickness of the laser-synthesized TMD films, which in some cases is so extreme that it results in the formation of isolated nanoribbons with a width of ~200 nm and a length of several micrometers. The formation of these nanostructures is attributed to the effect that is known as laser-induced periodic surface structures (LIPSS), which is caused by self-organized modulation of the incident laser intensity distribution due to optical feedback from surface roughness. We have fabricated two terminal photoconductive detectors based on nanostructured and continuous films and we show that the nanostructured TMD films exhibit enhanced photo-response, with photocurrent yield increased by three orders of magnitude as compared to their continuous counterparts.

Ionic Liquid-Gated Near-Infrared Polymer Phototransistors and Their Persistent Photoconductivity Application in Optical Memory

Organic phototransistors (OPTs) based on polymers have attracted substantial attention due to their excellent signal amplification, significant noise reduction, and solution process. Recently, the near-infrared (NIR) detection becomes urgent for OPTs with the increased demand for biomedicine, medical diagnostics, and health monitoring. To achieve this goal, a low working voltage of the OPTs is highly desirable. Therefore, the traditional dielectric gate can be replaced by an electrolyte gate to form electrolyte-gated organic phototransistors (EGOPTs), which are not only able to work at voltages below 1.0 V but also are biocompatible. PCDTPT, one of the most popular narrow band gap donor-acceptor copolymer, has been rarely studied in EGOPTs. In this work, an organic NIR-sensitive EGOPT based on PCDTPT is demonstrated with the detectivity of 7.08 × 10¹¹ Jones and the photoresponsivity of 3.56 A/W at a low operating voltage. In addition, an existing persistent photoconductivity (PPC) phenomenon was also observed when the device was exposed to air. The PPC characteristic of the EGOPT in air has been used to achieve a phototransistor memory, and the gate bias can directly eliminate the PPC as an erasing operation. This work reveals the underlying mechanism of the electrolyte-gated organic phototransistor memories and broadens the application of the EGOPTs.

Multiwavelength High-Detectivity MoS2 Photodetectors with Schottky Contacts

Photodetection is one of the vital functions for the multifunctional "More than Moore" (MtM) microchips urgently required by Internet of Things (IoT) and artificial intelligence (AI) applications. The further improvement of the performance of photodetectors faces various challenges, including materials, fabrication processes, and device structures. We demonstrate in this work MoS₂ photodetectors with a nanoscale channel length and a back-gate device structure. With the mechanically exfoliated six-monolayer-thick MoS₂, a Schottky contact between source/drain electrodes and MoS₂, a high responsivity of 4.1 × 10³ A W^-1, and a detectivity of 1.34 × 10¹³ cm Hz^1/2 W^-1 at 650 nm were achieved. The devices are also sensitive to multiwavelength lights, including 520 and 405 nm. The electrical and optoelectronic properties of the MoS₂ photodetectors were studied in depth, and the working mechanism of the devices was analyzed. The photoinduced Schottky barrier lowering (PIBL) was found to be important for the high performance of the phototransistor.

All-Printed Ultrahigh-Responsivity MoS2 Nanosheet Photodetectors Enabled by Megasonic Exfoliation

Printed 2D materials, derived from solution-processed inks, offer scalable and cost-effective routes to mechanically flexible optoelectronics. With micrometer-scale control and broad processing latitude, aerosol-jet printing (AJP) is of particular interest for all-printed circuits and systems. Here, AJP is utilized to achieve ultrahigh-responsivity photodetectors consisting of well-aligned, percolating networks of semiconducting MoS₂ nanosheets and graphene electrodes on flexible polyimide substrates. Ultrathin (≈1.2 nm thick) and high-aspect-ratio (≈1 μm lateral size) MoS₂ nanosheets are obtained by electrochemical intercalation followed by megasonic atomization during AJP, which not only aerosolizes the inks but also further exfoliates the nanosheets. The incorporation of the high-boiling-point solvent terpineol into the MoS₂ ink is critical for achieving a highly aligned and flat thin-film morphology following AJP as confirmed by grazing-incidence wide-angle X-ray scattering and atomic force microscopy. Following AJP, curing is achieved with photonic annealing, which yields quasi-ohmic contacts and photoactive channels with responsivities exceeding 10³  A W^-1 that outperform previously reported all-printed visible-light photodetectors by over three orders of magnitude. Megasonic exfoliation coupled with properly designed AJP ink formulations enables the superlative optoelectronic properties of ultrathin MoS₂ nanosheets to be preserved and exploited for the scalable additive manufacturing of mechanically flexible optoelectronics.

Unraveling the Mechanism of the 150-Fold Photocurrent Enhancement in Plasma-Treated 2D TMDs

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are increasingly investigated for applications such as optoelectronic memories, artificial neurons, sensors, and others that require storing photogenerated signals for an extended period. In this work, we report an environment- and gate voltage-dependent photocurrent modulation method of TMD monolayer-based devices (WS2 and MoS2). To achieve this, we introduce structural defects using mild argon-oxygen plasma treatment. The treatment leads to an extraordinary over 150-fold enhancement of the photocurrent in vacuum along with an increase in the relaxation time. A significant environmental and electrostatic dependence of the photocurrent signal is observed. We claim that the effect is a combined result of atomic vacancy introduction and oxide formation, strengthened by optimal wavelength choice for the modified surface. We believe that this work contributes to paving the way for tunable 2D TMD optoelectronic applications.

Twisted Light-Induced Photocurrent in a Silicon Nanowire Field-Effect Transistor

Light can possess orbital angular momentum (OAM), in addition to spin angular momentum (SAM), which offers nearly infinite possible values of momentum states, allowing a wider degree of freedom for information processing and communications. The OAM of light induces a selection rule that obeys the law of conservation of angular momentum as it interacts with a material, affecting the material's optical and electrical properties. In this work, silicon nanowire field-effect transistors are subjected to light with OAM, also known as twisted light. Electrical measurements on the devices consequently reveal photocurrent enhancements after incrementing the OAM of the incident light from 0ℏ (fundamental mode) to 5ℏ. Such a phenomenon is attributed to the enhancements of the photogating and the photoconductive effects under the influence of the OAM of light, the underlying mechanism of which is proposed and discussed using energy band diagrams. With these observations, a strategy for controlling photocurrent has been introduced, which can be a realization of the application in the field of optoelectronics technology.

Imaging Spatial Distribution of Photogenerated Carriers in Monolayer MoS2 with Kelvin Probe Force Microscopy

The spatial distribution of photogenerated carriers in atomically thin MoS₂ flakes is investigated by measuring surface potential changes under light illumination using Kelvin probe force microscopy (KPFM). It is demonstrated that the vertical redistribution of photogenerated carriers, which is responsible for photocurrent generation in MoS₂ photodetectors, can be imaged as surface potential changes with KPFM. The polarity of surface potential changes points to the trapping of photogenerated holes at the interface between MoS₂ and the substrate as a major mechanism for the photoresponse in monolayer MoS₂. The temporal response of the surface potential changes is compatible with the time constant of MoS₂ photodetectors. The spatial inhomogeneity in the surface potential changes at the low light intensity that is related to the defect distribution in MoS₂ is also investigated.

Polarization-perceptual anisotropic two-dimensional ReS2 neuro-transistor with reconfigurable neuromorphic vision

Polarization is a common and unique phenomenon in nature, which reveals more camouflage features of objects. However, current polarization-perceptual devices based on conventional physical architectures face enormous challenges for high-performance computation due to the traditional von Neumann bottleneck. In this work, a novel polarization-perceptual neuro-transistor with reconfigurable anisotropic vision is proposed based on a two-dimensional ReS₂ phototransistor. The device exhibits excellent photodetection ability and superior polarization sensitivity due to its direct band gap semiconductor property and strong anisotropic crystal structure, respectively. The fascinating polarization-sensitive neuromorphic behavior, such as polarization memory consolidation and reconfigurable visual imaging, are successfully realized. In particular, the regulated polarization responsivity and dichroic ratio are successfully emulated through our artificial compound eyes. More importantly, two intriguing polarization-perceptual applications for polarized navigation with reconfigurable adaptive learning abilities and three-dimensional visual polarization imaging are also experimentally demonstrated. The proposed device may provide a promising opportunity for future polarization perception systems in intelligent humanoid robots and autonomous vehicles.

Improved Temporal Response of MoS2 Photodetectors by Mild Oxygen Plasma Treatment

Temporal response is an important factor limiting the performance of two-dimensional (2D) material photodetectors. The deep trap states caused by intrinsic defects are the main factor to prolong the response time. In this work, it is demonstrated that the trap states in 2D molybdenum disulfide (MoS₂) can be efficiently modulated by defect engineering through mild oxygen plasma treatment. The response time of the few-layer MoS₂ photodetector is accelerated by 2–3 orders of magnitude, which is mainly attributed to the deep trap states that can be easily filled when O₂ or oxygen ions are chemically bonded with MoS₂ at sulfur vacancies (SV) sites. We characterized the defect engineering of plasma-exposed MoS₂ by Raman, PL and electric properties. Under the optimal processing conditions of 30 W, 50 Pa and 30 s, we found 30-fold enhancements in photoluminescence (PL) intensity and a nearly 2-fold enhancement in carrier field-effect mobility, while the rise and fall response times reached 110 ms and 55 ms, respectively, at the illumination wavelength of 532 nm. This work would, therefore, offer a practical route to improve the performance of 2D dichalcogenide-based devices for future consideration in optoelectronics research.

A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

Monolayer MoS₂ exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors and light emitting diodes. For image sensing applications, improving the light sensitivity relies on achieving a low dark current that enables the detection weak light signals. Although previous reports on improving the detectivity have been explored with heterostructures and pn junction devices, some of these approaches lack CMOS compatibility processing and sufficient low dark current suppression. Steep slope transistors that overcome the Boltzmann tyranny can further enhance the performance in photodetectors by providing efficient extraction of photogenerated charges. Here, we report a monolayer MoS₂ floating gate negative capacitance phototransistor with the integration of a hafnium-zirconium oxide ferroelectric capacitor. In this study, a SS_min of 30 mV dec^-1, very low dark currents of 10^-13-10^-14 A, and a high detectivity of 7.2 × 10¹⁵ cm Hz^1/2 W^-1 were achieved under weak light illumination due to an enhancement in the photogating effect. In addition, its potential as an optical memory and as an optical synapse with excellent long-term potentiation characteristics in an artificial neural network was also explored. Overall, this device structure offers high photosensitivity to weak light signals for future low-powered optoelectronic applications.

Ultralow Power Optical Synapses Based on MoS2 Layers by Indium-Induced Surface Charge Doping for Biomimetic Eyes

Biomimetic eyes, with their excellent imaging functions such as large fields of view and low aberrations, have shown great potentials in the fields of visual prostheses and robotics. However, high power consumption and difficulties in device integration severely restrict their rapid development. In this study, an artificial synaptic device consisting of a molybdenum disulfide (MoS₂ ) film coated with an electron injection enhanced indium (In) layer is proposed to increase the channel conductivity and reduce the power consumption. This artificial synaptic device achieves an ultralow power consumption of 68.9 aJ per spike, which is several hundred times lower than those of the optical artificial synapses reported in literature. Furthermore, the multilayer and polycrystalline MoS₂ film shows persistent photoconductivity performance, effectively resulting in short-term plasticity, long-term plasticity, and their transitions between each other. A 5 × 5 In/MoS₂ synaptic device array is constructed into a hemispherical electronic retina, demonstrating its impressive image sensing and learning functions. This research provides a new methodology for effective control of artificial synaptic devices, which have great opportunities used in bionic retinas, robots, and visual prostheses.

Monolayer MoS2photodetectors with a buried-gate field-effect transistor structure

Unlike zero-bandgap graphene, molybdenum disulfide (MoS₂) has an adjustable bandgap and high light absorption rate, hence photodetectors based on MoS₂have attracted tremendous research attention. Most of the reported MoS₂photodetectors adopted back-gate field-effect transistor (FET) structure due to its easy fabrication and modulation features. However, the back-gate FET structure requires very high gate voltage up to 100 V, and it is impossible to modulate each device in an array with this structure independently. This work demonstrated a monolayer MoS₂photodetector based on a buried-gate FET structure whose experimental results showed that both the electrical and photoelectrical properties could be well modulated by a gate voltage as low as 3 V. A photoresponsivity above 1 A W^-1was obtained under a 395 nm light-emitting diode light illumination, which is over 2 orders of magnitude higher than that of a reported back-gate photodetector based on monolayer MoS₂(7.5 mA W^-1). The photoresponsivity can be further improved by increasing the buried gate voltage and source-drain voltage. These results are of significance for the practical applications of MoS₂photodetectors, especially in the low voltage and energy-saving areas.

Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are unit-cell thick materials with tunable physical properties according to their size, morphology, and chemical composition. Their transition of lab-scale research to industrial-scale applications requires process development for the wafer-scale growth and scalable device fabrication. Herein, we report on a new type of atmospheric pressure chemical vapor deposition (APCVD) process that utilizes colloidal nanoparticles as process-scalable precursors for the wafer-scale production of TMD monolayers. Facile uniform distribution of nanoparticle precursors on the entire substrate leads to the wafer-scale uniform synthesis of TMD monolayers with the controlled size and morphology. Composition-controlled TMD alloy monolayers with tunable bandgaps can be produced by simply mixing dual nanoparticle precursor solutions in the desired ratio. We also demonstrate the fabrication of ultrathin field-effect transistors and flexible electronics with uniformly controlled performance by using TMD monolayers.

Preparation and Research of Monolayer WS2 FETs Encapsulated by h-BN Material

Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS₂/h-BN vertical vdWs heterostructure material can be synthesized by chemical vapor deposition (CVD) and wet transfer methods. Monolayer WS₂ material and WS₂/h-BN vertical vdWs heterostructure material can be tested and characterized using XPS, SEM, EDS, AFM and Raman spectroscopy, which can prove the existence of corresponding materials. When the thickness of the material decreases, the Coulomb scattering amongst two-dimensional (2D) layered materials increases. This is because both the shielding effect and the distance between the channel and the interface layer decrease. FET devices are then fabricated on WS₂/h-BN vdWs heterostructure material by the electron beam lithography and evaporation processes. The effects of vdWs epitaxy on electrical transmission when WS₂/h-BN vdWs heterostructure material is formed are explored. Finally, the related electrical performance of FET devices is tested and analyzed. Our experimental research provides guidance for the use of electronic devices with vdWs heterostructure material.

Novel organic semiconductors based on 2-amino-anthracene: Synthesis, charge transport and photo-conductive properties

Anthracene is considered to be a popular choice as a building block for organic semiconductors. The present work is dedicated to the synthesis and characterization of a novel semiconductor (10-OPIA) possessing mesogenic properties, which allows better control over charge transport in the bulk of a material. A novel anthracene-based molecule is characterized for its potential applications: frontier molecular energy levels are studied by optical spectroscopy and cyclic voltammetry and compared to values obtained via ab initio calculations. Thermophysical and mesogenic properties are investigated by optical microscopy and differential scanning calorimetry. Charge transport properties are characterized by means of an OFET device. It is found that this material can be easily aligned and exhibits a field effect hole mobility of 5.22 × 10^-5 cm² V^-1 s^-1 and an ON/OFF ratio of 10⁴ in the device prepared by drop casting. Finally, the photoconductive properties of this novel material are addressed in order to investigate its potential applications for organic phototransistors: it exhibits a large photoconductive gain of >100 and a photo-responsivity of >1 A W^-1.

Large-Area, Two-Dimensional MoS2 Exfoliated on Gold: Direct Experimental Access to the Metal-Semiconductor Interface

Two-dimensional semiconductors such as MoS₂ are promising for future electrical devices. The interface to metals is a crucial and critical aspect for these devices because undesirably high resistances due to Fermi level pinning are present, resulting in unwanted energy losses. To date, experimental information on such junctions has been obtained mainly indirectly by evaluating transistor characteristics. The fact that the metal-semiconductor interface is typically embedded, further complicates the investigation of the underlying physical mechanisms at the interface. Here, we present a method to provide access to a realistic metal-semiconductor interface by large-area exfoliation of single-layer MoS₂ on clean polycrystalline gold surfaces. This approach allows us to measure the relative charge neutrality level at the MoS₂-gold interface and its spatial variation almost directly using Kelvin probe force microscopy even under ambient conditions. By bringing together hitherto unconnected findings about the MoS₂-gold interface, we can explain the anomalous Raman signature of MoS₂ in contact to metals [ACS Nano. 7, 2013, 11350] which has been the subject of intense recent discussions. In detail, we identify the unusual Raman mode as the A_1g mode with a reduced Raman shift (397 cm^-1) due to the weakening of the Mo-S bond. Combined with our X-ray photoelectron spectroscopy data and the measured charge neutrality level, this is in good agreement with a previously predicted mechanism for Fermi level pinning at the MoS₂-gold interface [Nano Lett. 14, 2014, 1714]. As a consequence, the strength of the MoS₂-gold contact can be determined from the intensity ratio between the reduced A_1greduced mode and the unperturbed A_1g mode.

Steep-Slope Gate-Connected Atomic Threshold Switching Field-Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors

For next-generation electronics and optoelectronics, 2D-layered nanomaterial-based field effect transistors (FETs) have garnered attention as promising candidates owing to their remarkable properties. However, their subthreshold swings (SS) cannot be lower than 60 mV/decade owing to the limitation of the thermionic carrier injection mechanism, and it remains a major challenge in 2D-layered nanomaterial-based transistors. Here, a gate-connected MoS2 atomic threshold switching FET using a nitrogen-doped HfO2-based threshold switching (TS) device is developed. The proposed device achieves an extremely low SS of 11 mV/decade and a high on-off ratio of ≈106 by maintaining a high on-state drive current due to the steep switching of the TS device at the gate region. In particular, the proposed device can function as an infrared detectable phototransistor with excellent optical properties. The proposed device is expected to pave the way for the development of future 2D channel-based electrical and optical transistors.

Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives

Two-dimensional materials, including molybdenum disulfide (MoS2), present promising sensing and detecting capabilities thanks to their extreme sensitivity to changes in the environment. Their reduced thickness also facilitates the electrostatic control of the channel and opens the door to flexible electronic applications. However, these materials still exhibit integration difficulties with complementary-MOS standardized processes and methods. The device reliability is compromised by gate insulator selection and the quality of the metal/semiconductor and semiconductor/insulator interfaces. Despite some improvements regarding mobility, hysteresis and Schottky barriers having been reported thanks to metal engineering, vertically stacked heterostructures with compatible thin-layers (such as hexagonal boron nitride or device encapsulation) variability is still an important constraint to sensor performance. In this work, we fabricated and extensively characterized the reliability of as-synthesized back-gated MoS2 transistors. Under atmospheric and room-temperature conditions, these devices present a wide electrical hysteresis (up to 5 volts) in their transfer characteristics. However, their performance is highly influenced by the temperature, light and pressure conditions. The singular signature in the time response of the devices points to adsorbates and contaminants inducing mobile charges and trapping/detrapping carrier phenomena as the mechanisms responsible for time-dependent current degradation. Far from being only a reliability issue, we demonstrated a method to exploit this device response to perform light, temperature and/or pressure sensors in as-synthesized devices. Two orders of magnitude drain current level differences were demonstrated by comparing device operation under light and dark conditions while a factor up to 105 is observed at vacuum versus atmospheric pressure environments.

Multiple-Dimensionally Controllable Nucleation Sites of Two-Dimensional WS2/Bi2Se3 Heterojunctions Based on Vapor Growth

Two-dimensional (2D) heterojunctions have attracted great attention due to their excellent optoelectronic properties. Until now, precisely controlling the nucleation density and stacking area of 2D heterojunctions has been of critical importance but still a huge challenge. It hampers the progress of controlled growth of 2D heterojunctions for optoelectronic devices because the potential relation between numerous growth parameters and nucleation density is always poorly understood. Herein, by cooperatively controlling three parameters (substrate temperature, gas flow rate, and precursor concentration) in modified vapor deposition growth, the nucleation density and stacking area of WS₂/Bi₂Se₃ vertical heterojunctions were successfully modulated. High-quality WS₂/Bi₂Se₃ vertical heterojunctions with various stacking areas were effectively grown from single and multiple nucleation sites. Moreover, the potential nucleation mechanism and efficient charge transfer of WS₂/Bi₂Se₃ vertical heterojunctions were systematically studied by utilizing the density functional theory and photoluminescence spectra. This modified vapor deposition strategy and the proposed mechanism are helpful in controlling the nucleation density and stacking area of other heterojunctions, which plays a key role in the preparation of electronic and optoelectronic nanodevices.

Visible-Light-Activated Response Originating from Carrier-Mobility Modulation of NO2 Gas Sensors Based on MoS2 Monolayers

Some gas sensors exhibit significant increases in their sensitivity and response/recovery rates under light illumination. This photoactivation of the gas response is considered a promising alternative to conventional thermal activation, which requires high power consumption. Thin layers of molybdenum disulfide (MoS₂) are known to exhibit an effective photoactivated gas response under visible light. However, the mechanism of the photoactivated response has not yet been studied in detail. In this study, we fabricated field-effect-transistor (FET) gas sensors based on MoS₂ monolayers and investigated their photoactivated gas responses to NO₂ gas under illumination at various irradiances of visible light. A photocurrent was generated mainly due to the photovoltaic effect, which decreased upon exposure to NO₂. The conductance-based sensor response showed a dependence on NO₂ concentration according to the Langmuir adsorption isotherm, thereby suggesting that the response is proportional to the surface coverage of NO₂ molecules on the MoS₂ layer. The response and recovery rates showed a linear increase with increasing irradiance. Analysis based on the Langmuir adsorption model revealed that both photostimulated adsorption and desorption are involved in the photoactivated response. In contrast, despite the strong dependence of the photocurrent on the irradiance, the magnitude of the sensor response was independent of the irradiance. Based on this result and the change in transfer characteristics of the FET during NO₂ exposure, we concluded that the fast response/recovery of the photoactivated response is due to the carrier mobility modulation of MoS₂, which is caused by the dipole scattering of adsorbed NO₂ molecules.

Photophysics and Electronic Structure of Lateral Graphene/MoS2 and Metal/MoS2 Junctions

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS₂) interface. A 10× larger photocurrent is extracted at the EG/MoS₂ interface when compared to the metal (Ti/Au)/MoS₂ interface. This is supported by semi-local density functional theory (DFT), which predicts the Schottky barrier at the EG/MoS₂ interface to be ∼2× lower than that at Ti/MoS₂. We provide a direct visualization of a 2D material Schottky barrier through combination of angle-resolved photoemission spectroscopy with spatial resolution selected to be ∼300 nm (nano-ARPES) and DFT calculations. A bending of ∼500 meV over a length scale of ∼2-3 μm in the valence band maximum of MoS₂ is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.

Optoelectronic synapse using monolayer MoS2 field effect transistors

Optical data sensing, processing and visual memory are fundamental requirements for artificial intelligence and robotics with autonomous navigation. Traditionally, imaging has been kept separate from the pattern recognition circuitry. Optoelectronic synapses hold the special potential of integrating these two fields into a single layer, where a single device can record optical data, convert it into a conductance state and store it for learning and pattern recognition, similar to the optic nerve in human eye. In this work, the trapping and de-trapping of photogenerated carriers in the MoS₂/SiO₂ interface of a n-channel MoS₂ transistor was employed to emulate the optoelectronic synapse characteristics. The monolayer MoS₂ field effect transistor (FET) exhibits photo-induced short-term and long-term potentiation, electrically driven long-term depression, paired pulse facilitation (PPF), spike time dependent plasticity, which are necessary synaptic characteristics. Moreover, the device’s ability to retain its conductance state can be modulated by the gate voltage, making the device behave as a photodetector for positive gate voltages and an optoelectronic synapse at negative gate voltages.

Apparent differences between single layer molybdenum disulphide fabricated via chemical vapour deposition and exfoliation

Innovative applications based on two-dimensional solids require cost-effective fabrication processes resulting in large areas of high quality materials. Chemical vapour deposition is among the most promising methods to fulfill these requirements. However, for 2D materials prepared in this way it is generally assumed that they are of inferior quality in comparison to the exfoliated 2D materials commonly used in basic research. In this work we challenge this assumption and aim to quantify the differences in quality for the prototypical transition metal dichalcogenide MoS₂. To this end single layers of MoS₂ prepared by different techniques (exfoliation, grown by different chemical vapour deposition methods, transfer techniques and as vertical heterostructure with graphene) are studied by Raman and photoluminescence spectroscopy, complemented by atomic force microscopy. We demonstrate that as-prepared MoS₂, directly grown on SiO₂, differs from exfoliated MoS₂ in terms of higher photoluminescence, lower electron concentration and increased strain. As soon as a water film is intercalated (e.g. by transfer) underneath the grown MoS₂, in particular the (opto)electronic properties become practically identical to those of exfoliated MoS₂. A comparison of the two most common precursors shows that the growth with MoO₃ causes greater strain and/or defect density deviations than growth with ammonium heptamolybdate. As part of a heterostructure directly grown MoS₂ interacts much stronger with the substrate and in this case an intercalated water film does not lead to the complete decoupling, which is typical for exfoliation or transfer. Our work shows that the supposedly poorer quality of grown 2D transition metal dichalcogenides is indeed a misconception.

High-Performance Broadband Photodetector Based on Monolayer MoS2 Hybridized with Environment-Friendly CuInSe2 Quantum Dots

Monolayer MoS₂, a direct bandgap transition metal dichalcogenide (TMD), has attracted worldwide attention in electronics and optoelectronics. However, the performance of photodetectors based on monolayer MoS₂ is restricted to a weak optical absorption, narrow absorption range, and persistent photoconductance. Herein, benefiting from an easy solution process, high light absorption coefficient, and wide absorption range, environment-friendly CuInSe₂ quantum dots (QDs) are hybridized with monolayer MoS₂ for high-performance broadband photodetectors. Owing to the favorable type-II energy band alignment of MoS₂/CuInSe₂-QDs, the hybrid photodetector exhibits a broadband photoresponse from the ultraviolet to near-infrared region, with an ultrahigh photoresponsivity of 74.8 A/W at 1064 nm, and compared with those of the pristine MoS₂ device, the photoresponsivity and specific detectivity in the ultraviolet-visible region were enhanced by about 30 and 20 times, respectively. Furthermore, the formed depletion region at the MoS₂/CuInSe₂-QDs interface can significantly increase the photoresponse speed, and the accumulated holes in the QD side induce a strong photogating effect to improve the photoresponsive characteristics of the hybrid photodetector. Our work opens up opportunities for fabricating high-performance monolayer TMD-based broadband photodetectors.

Low-Power and Ultra-Thin MoS2 Photodetectors on Glass

Integration of low-power consumer electronics on glass can revolutionize the automotive and transport sectors, packaging industry, smart building and interior design, healthcare, life science engineering, display technologies, and many other applications. However, direct growth of high-performance, scalable, and reliable electronic materials on glass is difficult owing to low thermal budget. Similarly, development of energy-efficient electronic and optoelectronic devices on glass requires manufacturing innovations. Here, we accomplish both by relatively low-temperature (<600 °C) metal-organic chemical vapor deposition growth of atomically thin MoS₂ on multicomponent glass and fabrication of low-power phototransistors using atomic layer deposition (ALD)-grown, high-k, and ultra-thin (∼20 nm) Al₂O₃ as the top-gate dielectric, circumventing the challenges associated with the ALD nucleation of oxides on inert basal planes of van der Waals materials. The MoS₂ photodetectors demonstrate the ability to detect low-intensity visible light at high speed and low energy expenditure of ∼100 pico Joules. Furthermore, low device-to-device performance variation across the entire 1 cm² substrate and aggressive channel length scalability confirm the technology readiness level of ultra-thin MoS₂ photodetectors on glass.

Optically Controllable 2D Material/Complex Oxide Heterointerface

Heterostructures play a vital role in functional devices on the basis of the individual constituents. Non-conventional heterostructures formed by stacking 2D materials onto structurally distinct materials are of great interest in achieving novel phenomena that are both scientifically and technologically relevant. Here, a heterostructure based on a 2D (molybdenum ditelluride) MoTe2 and an amorphous strontium titanium oxide (a-STO) thin film is reported. The heterostructure functions as a high-performance photodetector, which exhibits anomalous negative photoresponse in the pristine device due to the scattering effect from the light-induced Oδ- ions. The photoresponsivity and the specific detectivity are found to be >104 AW-1 and >1013 Jones, respectively, which are significantly higher than those in standard MoTe2 devices. Moreover, through tuning the light programming time, the photodetection behavior of the MoTe2/a-STO heterostructure experiences a dynamic evolution from negative to positive. This is due to the optically controllable modulation of the interfacial states, which is further confirmed by the X-ray photoelectron spectroscopy and photoluminescence measurements. It is envisioned that the 2D material/a-STO heterostructure could be a potential platform for exploring new functional devices.

Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large-area SnS layers exhibit a broadband spectral response ranging from deep-ultraviolet (UV) to near-infrared (NIR) wavelengths (i.e., 280-850 nm) with fast photodetection capabilities. For single-unit-cell-thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W^-1 ) than commercial photodetectors at a room-temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high-performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.

Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Semiconducting monolayers of a 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T' phase transition in a suspended 2D monolayer membrane of MoS₂. Electronic transport shows unexpected memristive properties in the MoS₂ membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the 2H-1T' phase transition, which imposes a 3% directional elongation of the topological 1T' phase with respect to the semiconducting 2H. We note that only a few percent 2H-1T' phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with first-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS₂ is important for the implementation of future devices.

Spatially Resolved Persistent Photoconductivity in MoS2-WS2 Lateral Heterostructures

The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial variations in photoconductivity in MoS₂-WS₂ lateral multijunction heterostructures using photon energy-resolved narrowband illumination. We find that the onset of photoconductivity in individual domains corresponds to the optical absorption onset, confirming that the tightly bound excitons in transition metal dichalcogenides can nonetheless dissociate into free carriers. These photogenerated carriers are most likely n-type and are seen to persist for up to days. Informed by finite element modeling we reveal that they can increase the carrier density by up to 200 times. This persistent photoconductivity appears to be dominated by contributions from the multilayer MoS₂ domains, and we attribute the flake-wide response in part to charge transfer across the heterointerface. Spatial correlation of our SMM imaging with photoluminescence (PL) mapping confirms the strong link between PL peak emission photon energy, PL intensity, and the local accumulated charge. This work reveals the spatially and temporally complex optoelectronic response of these systems and cautions that properties measured during or after illumination may not reflect the true dark state of these materials but rather a metastable charged state.

Electron Irradiation of Metal Contacts in Monolayer MoS2 Field-Effect Transistors

Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors are investigated under electron beam irradiation. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. The electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects. It is demonstrated that irradiation lowers the Schottky barrier at the contacts because of thermally induced atom diffusion and interfacial reactions. The simulation of electron paths in the device reveals that most of the beam energy is absorbed in the metal contacts. The study demonstrates that electron beam irradiation can be effectively used for contact improvement through local annealing.

An Atomically Thin Optoelectronic Machine Vision Processor

2D semiconductors, especially transition metal dichalcogenide (TMD) monolayers, are extensively studied for electronic and optoelectronic applications. Beyond intensive studies on single transistors and photodetectors, the recent advent of large-area synthesis of these atomically thin layers has paved the way for 2D integrated circuits, such as digital logic circuits and image sensors, achieving an integration level of ≈100 devices thus far. Here, a decisive advance in 2D integrated circuits is reported, where the device integration scale is increased by tenfold and the functional complexity of 2D electronics is propelled to an unprecedented level. Concretely, an analog optoelectronic processor inspired by biological vision is developed, where 32 × 32 = 1024 MoS₂ photosensitive field-effect transistors manifesting persistent photoconductivity (PPC) effects are arranged in a crossbar array. This optoelectronic processor with PPC memory mimics two core functions of human vision: it captures and stores an optical image into electrical data, like the eye and optic nerve chain, and then recognizes this electrical form of the captured image, like the brain, by executing analog in-memory neural net computing. In the highlight demonstration, the MoS₂ FET crossbar array optically images 1000 handwritten digits and electrically recognizes these imaged data with 94% accuracy.

Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides

In this study, we investigate the electrical transport properties of back-gated field-effect transistors in which the channel is realized with two-dimensional transition metal dichalcogenide nanosheets, namely palladium diselenide (PdSe2) and molybdenum disulfide (MoS2). The effects of the environment (pressure, gas type, electron beam irradiation) on the electrical properties are the subject of an intense experimental study that evidences how PdSe2-based devices can be reversibly tuned from a predominantly n-type conduction (under high vacuum) to a p-type conduction (at atmospheric pressure) by simply modifying the pressure. Similarly, we report that, in MoS2-based devices, the transport properties are affected by pressure and gas type. In particular, the observed hysteresis in the transfer characteristics is explained in terms of gas absorption on the MoS2 surface due to the presence of a large number of defects. Moreover, we demonstrate the monotonic (increasing) dependence of the width of the hysteresis on decreasing the gas adsorption energy. We also report the effects of electron beam irradiation on the transport properties of two-dimensional field-effect transistors, showing that low fluences of the order of few e-/nm2 are sufficient to cause appreciable modifications to the transport characteristics. Finally, we profit from our experimental setup, realized inside a scanning electron microscope and equipped with piezo-driven nanoprobes, to perform a field emission characterization of PdSe2 and MoS2 nanosheets at cathode–anode separation distances as small as 200 nm.

Photomodulation of Charge Transport in All-Semiconducting 2D-1D van der Waals Heterostructures with Suppressed Persistent Photoconductivity Effect

Van der Waals heterostructures (VDWHs), obtained via the controlled assembly of 2D atomically thin crystals, exhibit unique physicochemical properties, rendering them prototypical building blocks to explore new physics and for applications in optoelectronics. As the emerging alternatives to graphene, monolayer transition metal dichalcogenides and bottom-up synthesized graphene nanoribbons (GNRs) are promising candidates for overcoming the shortcomings of graphene, such as the absence of a bandgap in its electronic structure, which is essential in optoelectronics. Herein, VDWHs comprising GNRs onto monolayer MoS₂ are fabricated. Field-effect transistors (FETs) based on such VDWHs show an efficient suppression of the persistent photoconductivity typical of MoS₂ , resulting from the interfacial charge transfer process. The MoS₂ -GNR FETs exhibit drastically reduced hysteresis and more stable behavior in the transfer characteristics, which is a prerequisite for the further photomodulation of charge transport behavior within the MoS₂ -GNR VDWHs. The physisorption of photochromic molecules onto the MoS₂ -GNR VDWHs enables reversible light-driven control over charge transport. In particular, the drain current of the MoS₂ -GNR FET can be photomodulated by 52%, without displaying significant fatigue over at least 10 cycles. Moreover, four distinguishable output current levels can be achieved, demonstrating the great potential of MoS₂ -GNR VDWHs for multilevel memory devices.

Local photodoping in monolayer MoS2

Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS₂ transistors locally. We claim that the photodoping fills the electronic states in MoS₂ conduction band, preventing the photon-absorption and the photocurrent generation by the MoS₂ sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS₂ on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS₂ transistors and the implementation of such an effect in integrated devices.

Emerging 2D Materials and Their Van Der Waals Heterostructures

Two-dimensional (2D) materials and their van der Waals heterojunctions offer the opportunity to combine layers with different properties as the building blocks to engineer new functional materials for high-performance devices, sensors, and water-splitting photocatalysts. A tremendous amount of work has been done thus far to isolate or synthesize new 2D materials as well as to form new heterostructures and investigate their chemical and physical properties. This article collection covers state-of-the-art experimental, numerical, and theoretical research on 2D materials and on their van der Waals heterojunctions for applications in electronics, optoelectronics, and energy generation.

Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors

We report the fabrication and electrical characterization of germanium arsenide (GeAs) field-effect transistors with ultrathin channels. The electrical transport is investigated in the 20-280 K temperature range, revealing that the p-type electrical conductivity and the field-effect mobility are growing functions of temperature. An unexpected peak is observed in the temperature dependence of the carrier density per area at ∼75 K. Such a feature is explained considering that the increased carrier concentration at higher temperatures and the vertical band bending combined with the gate field lead to the formation of a two-dimensional (2D) conducting channel, limited to few interfacial GeAs layers, which dominates the channel conductance. The conductivity follows the variable-range hopping model at low temperatures and becomes the band-type at higher temperatures when the 2D channel is formed. The formation of the 2D channel is validated through a numerical simulation that shows excellent agreement with the experimental data.

Nucleation promoted synthesis of large-area ReS2 film for high-speed photodetectors

Rhenium disulfide (ReS₂) is a transition metal dichalcogenide with a layer-independent direct bandgap. Notably, the weak interlayer coupling owing to its T-phase structure enables multi-layer ReS₂ to behave similarly to decoupled monolayers. This inherent characteristic makes continuous multilayer ReS₂ film a unique platform for large-area electronic applications. To date, the bulk of work on ReS₂ has been conducted using mechanically exfoliated samples or small size flakes (<1 mm²) with no potential for large-scale electronics. A chemical vapor deposition (CVD) synthesis of a large area, continuous ReS₂ film directly on a SiO₂ substrate is also known to be more challenging compared with that of other 2D materials, such as MoS₂ and WS₂. This is partly due to its tendency to grow into discrete dendritic structures. In this study, a large-area (>1 cm²), continuous multilayer ReS₂ film is directly synthesized on a SiO₂ substrate without any transfer process. The polycrystalline ReS₂ film synthesized by this method exhibits one of the fastest photoresponse speeds (0.03 s rise time and 0.025 s decay time) among the reported CVD films. The photoresponsivity R _λ was also the highest among large-area CVD films. The synthesis method for a continuous multilayer ReS₂ film is amenable to large-scale integration and will pave the way for practical optoelectronic applications based on 2D layered materials.

Gate stimulated high-performance MoS2-In(OH) x Se phototransistor

Two-dimensional (2D) materials such as graphene and MoS₂ have shown great potential in photodetection platforms. Photoresponsivity and photoresponse speed are two important parameters illustrating photodetector performances. Although various hybrid structures have been designed, the trade-off between photoresponsivity and photoresponse speed has not been well balanced. In this work, MoS₂ film and In(OH) _x Se nanoparticles are combined together to form the hybrid phototransistor. Utilizing both the photoconducting and photogating effects, the photoresponsivity increases about one order of magnitude with a value of 10² A W^-1. The ratio of photocurrent and dark current increases to a value of 10⁴. Considering the slow photo recovery speed, a 2 ms gate voltage pulse is applied after turning off the light, which results in a complete recovery of current. The photoconducting effect, photogating effect and gate voltage stimulation simultaneously promote the superior comprehensive photoresponse performances. This method can be further explored and utilized for realizing high performance photodetectors.