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Shen R, Jiang Y, Li Z, Tian J, Li S, Li T, Chen Q. Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8247. [PMID: 36431733 PMCID: PMC9698720 DOI: 10.3390/ma15228247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Revised: 10/27/2022] [Accepted: 11/08/2022] [Indexed: 06/16/2023]
Abstract
Optical synapse is the basic component for optical neuromorphic computing and is attracting great attention, mainly due to its great potential in many fields, such as image recognition, artificial intelligence and artificial visual perception systems. However, optical synapse with infrared (IR) response has rarely been reported. InAs nanowires (NWs) have a direct narrow bandgap and a large surface to volume ratio, making them a promising material for IR detection. Here, we demonstrate a near-infrared (NIR) (750 to 1550 nm) optical synapse for the first time based on a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))-coated InAs NW field-effect transistor (FET). The responsivity of the P(VDF-TrFE)-coated InAs NW FET reaches 839.3 A/W under 750 nm laser illumination, demonstrating the advantage of P(VDF-TrFE) coverage. The P(VDF-TrFE)-coated InAs NW device exhibits optical synaptic behaviors in response to NIR light pulses, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF) and a transformation from short-term plasticity (STP) to long-term plasticity (LTP). The working mechanism is attributed to the polarization effect in the ferroelectric P(VDF-TrFE) layer, which dominates the trapping and de-trapping characteristics of photogenerated holes. These findings have significant implications for the development of artificial neural networks.
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Affiliation(s)
- Rui Shen
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Yifan Jiang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Zhiwei Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Jiamin Tian
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Shuo Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Tong Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
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2
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Jiang Y, Shen R, Li T, Tian J, Li S, Tan HH, Jagadish C, Chen Q. Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y 2O 3. NANOSCALE 2022; 14:12830-12840. [PMID: 36039889 DOI: 10.1039/d2nr02736d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Due to their excellent electrical characteristics, InAs nanowires (NWs) have great potential as conducting channels in integrated circuits. However, the surface effect and loose native oxide coverage can deteriorate the performance of InAs NW transistors. Y2O3, a high-k dielectric with low Gibbs free energy, has been proposed to modify the InAs NW surface. Here, we systematically investigate the effect of Y2O3 coating on the performance of InAs NW field-effect transistors (FETs). We first explore the influence of the thermal oxidation process of Y2O3 on the performance of back-gated FETs. We then observe that the coverage of Y2O3/HfO2 bilayers on the NW decreases the hysteresis (the smallest value reaches 0.1 V), subthreshold swing (SS, down to 169 mV dec-1) and on-state resistance Ron, and increases the field-effect mobility μFE (up to 4876.1 cm2 V-1 s-1) and the on-off ratio, mainly owing to the passivation effect on the NW surface. Finally, paired top-gated NW FETs with a Y2O3/HfO2 bilayer and a single layer of HfO2 dielectric are fabricated and compared. The Y2O3/HfO2 bilayer provides better gate control (SSmin = 113 mV dec-1) under a smaller gate oxide capacitance, with an interface trap density as low as 1.93 × 1012 eV-1 cm-2. The use of the Y2O3/HfO2 stack provides an effective strategy to enhance the performance of III-V-based transistors for future applications.
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Affiliation(s)
- Yifan Jiang
- Key Laboratory for the Physic and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
| | - Rui Shen
- Key Laboratory for the Physic and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
| | - Tong Li
- Key Laboratory for the Physic and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
- Department of Electronic Materials Engineering, ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Jiamin Tian
- Key Laboratory for the Physic and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
| | - Shuo Li
- Key Laboratory for the Physic and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Qing Chen
- Key Laboratory for the Physic and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
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Smith LW, Batey JO, Alexander-Webber JA, Fan Y, Hsieh YC, Fung SJ, Jevtics D, Robertson J, Guilhabert BJE, Strain MJ, Dawson MD, Hurtado A, Griffiths JP, Beere HE, Jagadish C, Burton OJ, Hofmann S, Chen TM, Ritchie DA, Kelly M, Joyce HJ, Smith CG. High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures. ACS NANO 2020; 14:15293-15305. [PMID: 33104341 DOI: 10.1021/acsnano.0c05622] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials-graphene and semiconductor nanowires-integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μFE = 880/3180 cm2 V-1 s-1 (lower/upper bound), subthreshold swing 430 mV dec-1, and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.
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Affiliation(s)
- Luke W Smith
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Jack O Batey
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Jack A Alexander-Webber
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Ye Fan
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Yu-Chiang Hsieh
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Shin-Jr Fung
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Dimitars Jevtics
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Joshua Robertson
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Benoit J E Guilhabert
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Michael J Strain
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Martin D Dawson
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Antonio Hurtado
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Jonathan P Griffiths
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Harvey E Beere
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering and Australian Research Council Centre of Excellence on Tranformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Oliver J Burton
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Stephan Hofmann
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Tse-Ming Chen
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - David A Ritchie
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Michael Kelly
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Hannah J Joyce
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Charles G Smith
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
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Demontis V, Rocci M, Donarelli M, Maiti R, Zannier V, Beltram F, Sorba L, Roddaro S, Rossella F, Baratto C. Conductometric Sensing with Individual InAs Nanowires. SENSORS (BASEL, SWITZERLAND) 2019; 19:E2994. [PMID: 31284650 PMCID: PMC6651090 DOI: 10.3390/s19132994] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2019] [Revised: 07/05/2019] [Accepted: 07/05/2019] [Indexed: 01/28/2023]
Abstract
In this work, we isolate individual wurtzite InAs nanowires and fabricate electrical contacts at both ends, exploiting the single nanostructures as building blocks to realize two different architectures of conductometric sensors: (a) the nanowire is drop-casted onto-supported by-a SiO2/Si substrate, and (b) the nanowire is suspended at approximately 250 nm from the substrate. We test the source-drain current upon changes in the concentration of humidity, ethanol, and NO2, using synthetic air as a gas carrier, moving a step forward towards mimicking operational environmental conditions. The supported architecture shows higher response in the mid humidity range (50% relative humidity), with shorter response and recovery times and lower detection limit with respect to the suspended nanowire. These experimental pieces of evidence indicate a minor role of the InAs/SiO2 contact area; hence, there is no need for suspended nanostructures to improve the sensing performance. Moreover, the sensing capability of single InAs nanowires for detection of NO2 and ethanol in the ambient atmosphere is reported and discussed.
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Affiliation(s)
- Valeria Demontis
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Mirko Rocci
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Maurizio Donarelli
- Department of Information Engineering, University of Brescia, Via Branze 38, 25123 Brescia, Italy
| | - Rishi Maiti
- Department of ECE, George Washington University, Washington, DC 20052, USA (current address)
| | - Valentina Zannier
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Fabio Beltram
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Lucia Sorba
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Stefano Roddaro
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Francesco Rossella
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa, Italy.
| | - Camilla Baratto
- Department of Information Engineering, University of Brescia, Via Branze 38, 25123 Brescia, Italy.
- CNR-INO Brescia, Via Branze 45, 25123 Brescia, Italy.
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5
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Use of Metallic Nanoparticles and Nanoformulations as Nanofungicides for Sustainable Disease Management in Plants. ACTA ACUST UNITED AC 2019. [DOI: 10.1007/978-3-030-17061-5_12] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
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6
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Lehmann S, Wallentin J, Mårtensson EK, Ek M, Deppert K, Dick KA, Borgström MT. Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires. NANO LETTERS 2019; 19:2723-2730. [PMID: 30888174 DOI: 10.1021/acs.nanolett.9b01007] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The opportunity to engineer III-V nanowires in wurtzite and zinc blende crystal structure allows for exploring properties not conventionally available in the bulk form as well as opening the opportunity for use of additional degrees of freedom in device fabrication. However, the fundamental understanding of the nature of polytypism in III-V nanowire growth is still lacking key ingredients to be able to connect the results of modeling and experiments. Here we show InP nanowires of both pure wurtzite and pure zinc blende grown simultaneously on the same InP [100]-oriented substrate. We find wurtzite nanowires to grow along [Formula: see text] and zinc blende counterparts along [Formula: see text]. Further, we discuss the nucleation, growth, and polytypism of our nanowires against the background of existing theory. Our results demonstrate, first, that the crystal growth conditions for wurtzite and zinc blende nanowire growth are not mutually exclusive and, second, that the interface energies predominantly determine the crystal structure of the nanowires.
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Affiliation(s)
- Sebastian Lehmann
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
| | - Jesper Wallentin
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
- Synchrotron Radiation Research and NanoLund , Box 118, S-221 00 Lund , Sweden
| | - Erik K Mårtensson
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
| | - Martin Ek
- Centre for Analysis and Synthesis , Lund University , Box 124, 221 00 , Lund , Sweden
| | - Knut Deppert
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
| | - Kimberly A Dick
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
- Centre for Analysis and Synthesis , Lund University , Box 124, 221 00 , Lund , Sweden
| | - Magnus T Borgström
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
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7
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Li T, Shen R, Sun M, Pan D, Zhang J, Xu J, Zhao J, Chen Q. Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2O 3/HfO 2 layers. NANOSCALE 2018; 10:18492-18501. [PMID: 30132773 DOI: 10.1039/c8nr05680c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Quasi-one-dimensional semiconducting materials have attracted increasing attention due to their excellent ability to downscale the size of transistors. However, in quasi-one-dimensional nanowire (NW) transistors, their surface and interface properties play a very important role mainly due to the large surface-to-volume ratio of NWs and surface scattering, which degrade their carrier mobility. Herein, we developed a new method to cover the channel surface of InAs NW field effect transistors (FETs) with Y2O3/HfO2 layers to improve their electrical properties. We successfully fabricated nine FETs and measured their electrical properties, which improve after depositing the Y2O3/HfO2 layers, including an increase in on-state current, decrease in off-state current, increase in transconductance, increase in electron mobility and decrease in subthreshold swing. By comparing the properties of Y2O3/HfO2-covered devices with that of the FETs fabricated without the Y2O3 covering or without annealing, we prove that it is the combined Y2O3/HfO2 layers instead of only the Y2O3 or HfO2 layer that improve the electrical properties of the FETs. The Cs-corrected high-resolution scanning transmission electron microscopy study demonstrates that Y can actually diffuse through the native oxide layer (confirmed to be InOx) and reach the surface of the InAs NWs. Our results indicate that the desirable characteristics of Y2O3 and the surface passivation by HfO2 improve the electrical properties of the InAs NW FETs, in which Y2O3 plays an important role to modify and stabilize the interface between the InAs NWs and the outside dielectric layer. Furthermore, this method should also be applicable to other III-V materials.
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Affiliation(s)
- Tong Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China.
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8
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Gluschke JG, Seidl J, Lyttleton RW, Carrad DJ, Cochrane JW, Lehmann S, Samuelson L, Micolich AP. Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors. NANO LETTERS 2018; 18:4431-4439. [PMID: 29923725 DOI: 10.1021/acs.nanolett.8b01519] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 103 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface "self-cleaning" effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties.
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Affiliation(s)
- J G Gluschke
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - J Seidl
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - R W Lyttleton
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - D J Carrad
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , Copenhagen DK-2100 , Denmark
| | - J W Cochrane
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - S Lehmann
- Solid State Physics/NanoLund , Lund University , SE-221 00 Lund , Sweden
| | - L Samuelson
- Solid State Physics/NanoLund , Lund University , SE-221 00 Lund , Sweden
| | - A P Micolich
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
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9
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Alexander-Webber JA, Groschner CK, Sagade AA, Tainter G, Gonzalez-Zalba MF, Di Pietro R, Wong-Leung J, Tan HH, Jagadish C, Hofmann S, Joyce HJ. Engineering the Photoresponse of InAs Nanowires. ACS APPLIED MATERIALS & INTERFACES 2017; 9:43993-44000. [PMID: 29171260 DOI: 10.1021/acsami.7b14415] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
We report on individual-InAs nanowire optoelectronic devices which can be tailored to exhibit either negative or positive photoconductivity (NPC or PPC). The NPC photoresponse time and magnitude is found to be highly tunable by varying the nanowire diameter under controlled growth conditions. Using hysteresis characterization, we decouple the observed photoexcitation-induced hot electron trapping from conventional electric field-induced trapping to gain a fundamental insight into the interface trap states responsible for NPC. Furthermore, we demonstrate surface passivation without chemical etching which both enhances the field-effect mobility of the nanowires by approximately an order of magnitude and effectively eliminates the hot carrier trapping found to be responsible for NPC, thus restoring an "intrinsic" positive photoresponse. This opens pathways toward engineering semiconductor nanowires for novel optical-memory and photodetector applications.
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Affiliation(s)
- Jack A Alexander-Webber
- Department of Engineering, University of Cambridge , 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Catherine K Groschner
- Department of Engineering, University of Cambridge , 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Abhay A Sagade
- Department of Engineering, University of Cambridge , 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
- SRM Research Institute, Department of Physics & Nanotechnology, SRM University , Kattankulathur 603 203, India
| | - Gregory Tainter
- Department of Engineering, University of Cambridge , 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | | | - Riccardo Di Pietro
- Hitachi Cambridge Laboratory , JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - H Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge , 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Hannah J Joyce
- Department of Engineering, University of Cambridge , 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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