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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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2
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Yazdanpanah
Goharrizi A, Barzoki AM, Selberherr S, Filipovic L. A Theoretical Study of Armchair Antimonene Nanoribbons in the Presence of Uniaxial Strain Based on First-Principles Calculations. ACS APPLIED ELECTRONIC MATERIALS 2023; 5:4514-4522. [PMID: 37637974 PMCID: PMC10448714 DOI: 10.1021/acsaelm.3c00686] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 07/11/2023] [Indexed: 08/29/2023]
Abstract
The optimized geometry and also the electronic and transport properties of passivated edge armchair antimonene nanoribbons (ASbNRs) are studied using ab initio calculations. Due to quantum confinement, the size of the bandgap can be modulated from 1.2 eV to 2.4 eV (indirect), when the width is reduced from 5 nm to 1 nm, respectively. This study focuses on nanoribbons with a width of 5 nm (5-ASbNR) due to its higher potential for fabrication and an acceptable bandgap for electronic applications. Applying uniaxial compressive and tensile strain results in a reduction of the bandgap of the 5-ASbNR film. The indirect to direct bandgap transition was observed, when introducing a tensile strain of more than +4%. Moreover, when a compressive strain above 9% is introduced, semi-metallic behavior can be observed. By applying compressive (tensile) strain, the hole (electron) effective mass is reduced, thereby increasing the mobility of charge carriers. The study demonstrates that the carrier mobility of ASbNR-based nanoelectronic devices can be modulated by applying tensile or compressive strain on the ribbons.
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Affiliation(s)
| | - Ali Molajani Barzoki
- Department
of Electrical Engineering, Shahid Beheshti
University, Tehran IR19395, Iran
| | | | - Lado Filipovic
- Institute
for Microelectronics, Technische Universität Wien, 1040 Wien, Austria
- CDL
for Multi-Scale Process Modeling of Semiconductor Devices and Sensors
at the CD0509, 1040 Vienna, Austria
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3
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Sheverdyaeva PM, Hogan C, Bihlmayer G, Fujii J, Vobornik I, Jugovac M, Kundu AK, Gardonio S, Benher ZR, Santo GD, Gonzalez S, Petaccia L, Carbone C, Moras P. Giant and Tunable Out-of-Plane Spin Polarization of Topological Antimonene. NANO LETTERS 2023; 23:6277-6283. [PMID: 37459226 PMCID: PMC10375579 DOI: 10.1021/acs.nanolett.3c00153] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Topological insulators are bulk insulators with metallic and fully spin-polarized surface states displaying Dirac-like band dispersion. Due to spin-momentum locking, these topological surface states (TSSs) have a predominant in-plane spin polarization in the bulk fundamental gap. Here, we show by spin-resolved photoemission spectroscopy that the TSS of a topological insulator interfaced with an antimonene bilayer exhibits nearly full out-of-plane spin polarization within the substrate gap. We connect this phenomenon to a symmetry-protected band crossing of the spin-polarized surface states. The nearly full out-of-plane spin polarization of the TSS occurs along a continuous path in the energy-momentum space, and the spin polarization within the gap can be reversibly tuned from nearly full out-of-plane to nearly full in-plane by electron doping. These findings pave the way to advanced spintronics applications that exploit the giant out-of-plane spin polarization of TSSs.
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Affiliation(s)
- Polina M Sheverdyaeva
- Istituto di Struttura della Materia-CNR (ISM-CNR), Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | - Conor Hogan
- Istituto di Struttura della Materia-CNR (ISM-CNR), Via del Fosso del Cavaliere 100, 00133 Roma, Italy
- Dipartimento di Fisica, Università di Roma "Tor Vergata", Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - Gustav Bihlmayer
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany
| | - Jun Fujii
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | - Ivana Vobornik
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | - Matteo Jugovac
- Istituto di Struttura della Materia-CNR (ISM-CNR), Strada Statale 14 km 163.5, 34149 Trieste, Italy
- Peter Grünberg Institut PGI, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Asish K Kundu
- Istituto di Struttura della Materia-CNR (ISM-CNR), Strada Statale 14 km 163.5, 34149 Trieste, Italy
- International Center for Theoretical Physics (ICTP), Trieste, 34151, Italy
| | - Sandra Gardonio
- Materials Research Laboratory, University of Nova Gorica, Vipavska 11c, Ajdovščina 5270, Slovenia
| | - Zipporah Rini Benher
- Materials Research Laboratory, University of Nova Gorica, Vipavska 11c, Ajdovščina 5270, Slovenia
| | - Giovanni Di Santo
- Elettra - Sincrotrone Trieste S.C.p.A., Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | - Sara Gonzalez
- Elettra - Sincrotrone Trieste S.C.p.A., Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | - Luca Petaccia
- Elettra - Sincrotrone Trieste S.C.p.A., Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | - Carlo Carbone
- Istituto di Struttura della Materia-CNR (ISM-CNR), Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | - Paolo Moras
- Istituto di Struttura della Materia-CNR (ISM-CNR), Strada Statale 14 km 163.5, 34149 Trieste, Italy
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Lu Q, Cook J, Zhang X, Chen KY, Snyder M, Nguyen DT, Reddy PVS, Qin B, Zhan S, Zhao LD, Kowalczyk PJ, Brown SA, Chiang TC, Yang SA, Chang TR, Bian G. Realization of unpinned two-dimensional dirac states in antimony atomic layers. Nat Commun 2022; 13:4603. [PMID: 35933407 PMCID: PMC9357080 DOI: 10.1038/s41467-022-32327-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2022] [Accepted: 07/26/2022] [Indexed: 11/24/2022] Open
Abstract
Two-dimensional (2D) Dirac states with linear dispersion have been observed in graphene and on the surface of topological insulators. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at \documentclass[12pt]{minimal}
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\begin{document}$$\overline{{{\Gamma }}}$$\end{document}Γ¯ in topological insulators Bi2Se(Te)3 and Dirac cones at K and \documentclass[12pt]{minimal}
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\begin{document}$$K^{\prime}$$\end{document}K′ points in graphene. The low-energy dispersion of those Dirac states are isotropic due to the constraints of crystal symmetries. In this work, we report the observation of novel 2D Dirac states in antimony atomic layers with phosphorene structure. The Dirac states in the antimony films are located at generic momentum points. This unpinned nature enables versatile ways such as lattice strains to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points are highly anisotropic due to the reduced symmetry of generic momentum points. The exotic properties of unpinned Dirac states make antimony atomic layers a new type of 2D Dirac semimetals that are distinct from graphene. In graphene and on the surfaces of many topological insulators, the Dirac cones are pinned to high symmetry points in reciprocal space. Here, the authors report that the Dirac cones in atomically-thin Sb layers occur at generic reciprocal-space points which can be tuned by lattice strain.
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Affiliation(s)
- Qiangsheng Lu
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Jacob Cook
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Xiaoqian Zhang
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Kyle Y Chen
- Rock Bridge High School, Columbia, MO, 65203, USA
| | - Matthew Snyder
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Duy Tung Nguyen
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | | | - Bingchao Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Shaoping Zhan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Pawel J Kowalczyk
- Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, 90-236 Lodz, Pomorska, 149/153, Poland.
| | - Simon A Brown
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Physical and Chemical Sciences, University of Canterbury, Private Bag 4800, Christchurch, 8140, New Zealand
| | - Tai-Chang Chiang
- Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL, 61801-3080, USA.,Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, IL, 61801-2902, USA
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan
| | - Guang Bian
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA.
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5
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Su SH, Chuang PY, Chen HY, Weng SC, Chen WC, Tsuei KD, Lee CK, Yu SH, Chou MMC, Tu LW, Jeng HT, Tu CM, Luo CW, Cheng CM, Chang TR, Huang JCA. Topological Proximity-Induced Dirac Fermion in Two-Dimensional Antimonene. ACS NANO 2021; 15:15085-15095. [PMID: 34435764 DOI: 10.1021/acsnano.1c05454] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Antimonene is a promising two-dimensional (2D) material that is calculated to have a significant fundamental bandgap usable for advanced applications such as field-effect transistors, photoelectric devices, and the quantum-spin Hall (QSH) state. Herein, we demonstrate a phenomenon termed topological proximity effect, which occurs between a 2D material and a three-dimensional (3D) topological insulator (TI). We provide strong evidence derived from hydrogen etching on Sb2Te3 that large-area and well-ordered antimonene presents a 2D topological state. Delicate analysis with a scanning tunneling microscope of the evolutionary intermediates reveals that hydrogen etching on Sb2Te3 resulted in the formation of a large area of antimonene with a buckled structure. A topological state formed in the antimonene/Sb2Te3 heterostructure was confirmed with angle-resolved photoemission spectra and density-functional theory calculations; in particular, the Dirac point was located almost at the Fermi level. The results reveal that Dirac fermions are indeed realized at the interface of a 2D normal insulator (NI) and a 3D TI as a result of strong hybridization between antimonene and Sb2Te3. Our work demonstrates that the position of the Dirac point and the shape of the Dirac surface state can be tuned by varying the energy position of the NI valence band, which modifies the direction of the spin texture of Sb-BL/Sb2Te3 via varying the Fermi level. This topological phase in 2D-material engineering has generated a paradigm in that the topological proximity effect at the NI/TI interface has been realized, which demonstrates a way to create QSH systems in 2D-material TI heterostructures.
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Affiliation(s)
- Shu Hsuan Su
- Department of Physics, National Cheng Kung University, Taiwan 701, Taiwan
| | - Pei-Yu Chuang
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Hsin-Yu Chen
- Department of Physics, National Cheng Kung University, Taiwan 701, Taiwan
| | - Shih-Chang Weng
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Wei-Chuan Chen
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Ku-Ding Tsuei
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Chao-Kuei Lee
- Department of Photonics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Research Center for Applied Sciences, Academia Sinica, 187 Academia Road, Taipei 11529, Taiwan
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Shih-Hsun Yu
- Department of Materials and Optoelectronics Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Mitch M-C Chou
- Department of Materials and Optoelectronics Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Li-Wei Tu
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Horng-Tay Jeng
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- Physics Division, National Center for Theoretical Sciences, Hsinchu 30013, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Chien-Ming Tu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
| | - Chih-Wei Luo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
- Institute of Physics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Cheng-Maw Cheng
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106335, Taiwan
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Taiwan 701, Taiwan
- Center for Quantum Frontiers of Research and Technology (QFort), Tainan 701, Taiwan
- Physics Division, National Center for Theoretical Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Jung-Chun Andrew Huang
- Department of Physics, National Cheng Kung University, Taiwan 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
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6
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Hasanova GS, Aghazade AI, Babanly DM, Tagiev DB, Yusibov YA, Babanly MB. Thermodynamic Properties of Bismuth Selenides. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A 2021. [DOI: 10.1134/s0036024421050137] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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7
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Colonna S, Flammini R, Ronci F. Silicene growth on Ag(110) and Ag(111) substrates reconsidered in light of Si-Ag reactivity. NANOTECHNOLOGY 2021; 32:152001. [PMID: 33412522 DOI: 10.1088/1361-6528/abd974] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Silicene, the 2D silicon allotrope analogue of graphene, was theoretically predicted in 1994 as a metastable buckled honeycomb silicon monolayer. Similarly to its carbon counterpart it was predicted to present an electronic structure hosting Dirac cones. In the last decade a great deal of work has been done to synthesize silicene and exploit its properties. In this paper we will review our research group activity in the field, dealing in particular with silicon-substrate interaction upon silicon deposition, and discuss the still debated silicene formation starting from the chemistry of silicon unsaturated compounds.
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Affiliation(s)
- S Colonna
- Istituto di Struttura della Materia-CNR (ISM-CNR), Via del Fosso del Cavaliere 100, I-00133 Roma, Italy
| | - R Flammini
- Istituto di Struttura della Materia-CNR (ISM-CNR), Via del Fosso del Cavaliere 100, I-00133 Roma, Italy
| | - F Ronci
- Istituto di Struttura della Materia-CNR (ISM-CNR), Via del Fosso del Cavaliere 100, I-00133 Roma, Italy
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8
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Evolution of Topological Surface States Following Sb Layer Adsorption on Bi 2Se 3. MATERIALS 2021; 14:ma14071763. [PMID: 33918428 PMCID: PMC8061775 DOI: 10.3390/ma14071763] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/04/2021] [Revised: 03/29/2021] [Accepted: 03/31/2021] [Indexed: 01/28/2023]
Abstract
Thin antimony layers adsorbed on bismuth selenide (Bi2Se3) present an exciting topological insulator system. Much recent effort has been made to understand the synthesis and electronic properties of the heterostructure, particularly the migration of the topological surface states under adsorption. However, the intertwinement of the topological surface states of the pristine Bi2Se3 substrate with the Sb adlayer remains unclear. In this theoretical work, we apply density functional theory (DFT) to model heterostructures of single and double atomic layers of Sb on a bismuth selenide substrate. We thereby discuss established and alternative structural models, as well as the hybridization of topological surface states with the Sb states. Concerning the geometry, we reveal the possibility of structures with inverted Sb layers which are energetically close to the established ones. The formation energy differences are below 10 meV/atom. Concerning the hybridization, we trace the band structure evolution as a function of the adlayer-substrate distance. By following changes in the connection between the Kramers pairs, we extract a series of topological phase transitions. This allows us to explain the origin of the complex band structure, and ultimately complete our knowledge about this peculiar system.
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9
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Holtgrewe K, Mahatha SK, Sheverdyaeva PM, Moras P, Flammini R, Colonna S, Ronci F, Papagno M, Barla A, Petaccia L, Aliev ZS, Babanly MB, Chulkov EV, Sanna S, Hogan C, Carbone C. Topologization of β-antimonene on Bi 2Se 3 via proximity effects. Sci Rep 2020; 10:14619. [PMID: 32884112 PMCID: PMC7471962 DOI: 10.1038/s41598-020-71624-4] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Accepted: 08/19/2020] [Indexed: 11/09/2022] Open
Abstract
Topological surface states usually emerge at the boundary between a topological and a conventional insulator. Their precise physical character and spatial localization depend on the complex interplay between the chemical, structural and electronic properties of the two insulators in contact. Using a lattice-matched heterointerface of single and double bilayers of β-antimonene and bismuth selenide, we perform a comprehensive experimental and theoretical study of the chiral surface states by means of microscopy and spectroscopic measurements complemented by first-principles calculations. We demonstrate that, although β-antimonene is a trivial insulator in its free-standing form, it inherits the unique symmetry-protected spin texture from the substrate via a proximity effect that induces outward migration of the topological state. This "topologization" of β-antimonene is found to be driven by the hybridization of the bands from either side of the interface.
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Affiliation(s)
- K Holtgrewe
- Institut für Theoretische Physik and Center for Materials Research (LaMa), Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392, Gießen, Germany
| | - S K Mahatha
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, 34149, Trieste, Italy.
- Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607, Hamburg, Germany.
| | - P M Sheverdyaeva
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, 34149, Trieste, Italy
| | - P Moras
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, 34149, Trieste, Italy
| | - R Flammini
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, Via del Fosso del Cavaliere 100, 00133, Roma, Italy
| | - S Colonna
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, Via del Fosso del Cavaliere 100, 00133, Roma, Italy
| | - F Ronci
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, Via del Fosso del Cavaliere 100, 00133, Roma, Italy
| | - M Papagno
- Dipartimento di Fisica, CS, Università Della Calabria, Via P. Bucci, 87036, Arcavacata di Rende, Italy
| | - A Barla
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, 34149, Trieste, Italy
| | - L Petaccia
- Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149, Trieste, Italy
| | - Z S Aliev
- Azerbaijan State Oil and Industry University, AZ1010, Baku, Azerbaijan
| | - M B Babanly
- Institute Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Science, AZ1143, Baku, Azerbaijan
| | - E V Chulkov
- Departamento de Fisica de Materiales, UPV/EHU, 20080, Donostia-San Sebastian, Basque Country, Spain
- Donostia International Physics Center (DIPC), P. de Manuel Lardizabal 4, 20018, San Sebastián, Basque Country, Spain
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Institute of Strength Physics and Materials Science, Russian Academy of Sciences, 634021, Tomsk, Russia
| | - S Sanna
- Institut für Theoretische Physik and Center for Materials Research (LaMa), Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392, Gießen, Germany
| | - C Hogan
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, Via del Fosso del Cavaliere 100, 00133, Roma, Italy
| | - C Carbone
- Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, 34149, Trieste, Italy
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10
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Niu T, Meng Q, Zhou D, Si N, Zhai S, Hao X, Zhou M, Fuchs H. Large-Scale Synthesis of Strain-Tunable Semiconducting Antimonene on Copper Oxide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906873. [PMID: 31825535 DOI: 10.1002/adma.201906873] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2019] [Revised: 11/26/2019] [Indexed: 06/10/2023]
Abstract
Controlled synthesis of 2D structures on nonmetallic substrate is challenging, yet an attractive approach for the integration of 2D systems into current semiconductor technologies. Herein, the direct synthesis of high-quality 2D antimony, or antimonene, on dielectric copper oxide substrate by molecular beam epitaxy is reported. Delicate scanning tunneling microscopy imaging on the evolution intermediates reveals a segregation growth process on Cu3 O2 /Cu(111), from ordered dimer chains to packed dot arrays, and finally to monolayer antimonene. First-principles calculations demonstrate the strain-modulated band structures in antimonene, which interacts weakly with the oxide surface so that its semiconducting nature is preserved, in perfect agreement with spectroscopic measurements. This work paves the way for large-scale growth and processing of antimonene for practical implementation.
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Affiliation(s)
- Tianchao Niu
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Qingling Meng
- School of Physics, Beihang University, Beijing, 100191, China
| | - Dechun Zhou
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Nan Si
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Shuwei Zhai
- School of Physics, Beihang University, Beijing, 100191, China
| | - Xiamin Hao
- School of Physics, Beihang University, Beijing, 100191, China
| | - Miao Zhou
- School of Physics, Beihang University, Beijing, 100191, China
| | - Harald Fuchs
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing, 210094, China
- Physikalisches Institut, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, Münster, 48149, Germany
- Center for Nanotechnology (CeNTech), Westfälische Wilhelms-Universität Münster, Heisenbergstrasse 11, Münster, 48149, Germany
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11
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Hogan C, Holtgrewe K, Ronci F, Colonna S, Sanna S, Moras P, Sheverdyaeva PM, Mahatha S, Papagno M, Aliev ZS, Babanly M, Chulkov EV, Carbone C, Flammini R. Temperature Driven Phase Transition at the Antimonene/Bi 2Se 3 van der Waals Heterostructure. ACS NANO 2019; 13:10481-10489. [PMID: 31469534 DOI: 10.1021/acsnano.9b04377] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report the discovery of a temperature-induced phase transition between the α and β structures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of α-antimonene having different orientations with respect to the substrate. During a mild annealing, the β phase grows and prevails over the α phase, eventually forming a single domain that perfectly matches the surface lattice structure of bismuth selenide. First-principles thermodynamics calculations of this van der Waals heterostructure explain the different temperature-dependent stability of the two phases and reveal a minimum energy transition path. Although the formation energies of freestanding α- and β-antimonene only slightly differ, the β phase is ultimately favored in the annealed heterostructure due to an increased interaction with the substrate mediated by the perfect lattice match.
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Affiliation(s)
- Conor Hogan
- Istituto di Struttura della Materia-CNR (ISM-CNR) , Via del Fosso del Cavaliere , 00133 Roma , Italy
- Dipartimento di Fisica , Università di Roma "Tor Vergata" , Via della Ricerca Scientifica 1 , 00133 Roma , Italy
| | - Kris Holtgrewe
- Institut für Theoretische Physik and Center for Materials Research , Justus-Liebig-Universität Gießen , Heinrich-Buff-Ring 16 , 35392 Gießen , Germany
| | - Fabio Ronci
- Istituto di Struttura della Materia-CNR (ISM-CNR) , Via del Fosso del Cavaliere , 00133 Roma , Italy
| | - Stefano Colonna
- Istituto di Struttura della Materia-CNR (ISM-CNR) , Via del Fosso del Cavaliere , 00133 Roma , Italy
| | - Simone Sanna
- Institut für Theoretische Physik and Center for Materials Research , Justus-Liebig-Universität Gießen , Heinrich-Buff-Ring 16 , 35392 Gießen , Germany
| | - Paolo Moras
- Istituto di Struttura della Materia-CNR (ISM-CNR) , S.S. 14, km 163.5 , I-34149 Trieste , Italy
| | - Polina M Sheverdyaeva
- Istituto di Struttura della Materia-CNR (ISM-CNR) , S.S. 14, km 163.5 , I-34149 Trieste , Italy
| | - Sanjoy Mahatha
- Istituto di Struttura della Materia-CNR (ISM-CNR) , S.S. 14, km 163.5 , I-34149 Trieste , Italy
| | - Marco Papagno
- Dipartimento di Fisica , Università della Calabria , Via P.Bucci , 87036 Arcavacata di Rende ( CS ), Italy
| | - Ziya S Aliev
- Azerbaijan State Oil and Industry University , AZ1010 Baku , Azerbaijan
| | - Mahammad Babanly
- Institute of Catalysis and Inorganic Chemistry , Azerbaijan National Academy of Science , AZ1143 Baku , Azerbaijan
| | - Evgeni V Chulkov
- Departamento de Física de Materiales, Facultad de Ciencias Químicas, UPV/EHU, and Centro de Física de Materiales, CFM-MPC, CSIC-UPV/EHU , Apdo. 1072, 20080 San Sebástian/Donostia , Basque Country , Spain
- Saint Petersburg State University , 198504 Saint Petersburg , Russia
- Donostia International Physics Center (DIPC) , P. de Manuel Lardizabal 4 , 20018 San Sebastián , Basque Country , Spain
| | - Carlo Carbone
- Istituto di Struttura della Materia-CNR (ISM-CNR) , S.S. 14, km 163.5 , I-34149 Trieste , Italy
| | - Roberto Flammini
- Istituto di Struttura della Materia-CNR (ISM-CNR) , Via del Fosso del Cavaliere , 00133 Roma , Italy
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12
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Pia AD, Lisi S, Luca OD, Warr DA, Lawrence J, Otrokov MM, Aliev ZS, Chulkov EV, Agostino RG, Arnau A, Papagno M, Costantini G. TCNQ Physisorption on the Topological Insulator Bi 2 Se 3. Chemphyschem 2018; 19:2405-2410. [PMID: 29847012 DOI: 10.1002/cphc.201800259] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2018] [Indexed: 11/07/2022]
Abstract
Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin-momentum locked and gapless surface states. The breaking of the time-reversal symmetry after the introduction of magnetic impurities, such as 3d transition metal atoms embedded in two-dimensional molecular networks, could lead to several phenomena interesting for device fabrication. The first step towards the fabrication of metal-organic coordination networks on the surface of a topological insulator is to investigate the adsorption of the pure molecular layer, which is the aim of this study. Here, the effect of the deposition of the electron acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecules on the surface of a prototypical topological insulator, bismuth selenide (Bi2 Se3 ), is investigated. Scanning tunneling microscope images at low-temperature reveal the formation of a highly ordered two-dimensional molecular network. The essentially unperturbed electronic structure of the topological insulator observed by photoemission spectroscopy measurements demonstrates a negligible charge transfer between the molecular layer and the substrate. Density functional theory calculations confirm the picture of a weakly interacting adsorbed molecular layer. These results reveal significant potential of TCNQ for the realization of metal-organic coordination networks on the topological insulator surface.
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Affiliation(s)
- Ada Della Pia
- Department of Chemistry, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, UK
| | - Simone Lisi
- Institut Néel, 25 Rue des Martyrs BP 166, 38042, Grenoble, France
| | - Oreste De Luca
- Dipartimento di Fisica, Università della Calabria, 87036, Arcavacata di Rende (CS), Italy
| | - Daniel A Warr
- Department of Chemistry, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, UK
| | - J Lawrence
- Department of Chemistry, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, UK
| | - Mikhail M Otrokov
- Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, 20080, San Sebastián/Donostia, Spain
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Tomsk State University, 634050, Tomsk, Russia
| | - Ziya S Aliev
- Azerbaijan State Oil and Industry University, AZ1010, Baku, Azerbaijan
- Materials Science and Nanotechnology Department, Near East University, North Cyprus, Mersin 10, 99138, Nicosia, Turkey
| | - Evgueni V Chulkov
- Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, 20080, San Sebastián/Donostia, Spain
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Donostia International Physics Center (DIPC), 20018, Donostia-San Sebastian, Spain
| | - Raffaele G Agostino
- Dipartimento di Fisica, Università della Calabria, 87036, Arcavacata di Rende (CS), Italy
| | - Andrés Arnau
- Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, 20080, San Sebastián/Donostia, Spain
- Donostia International Physics Center (DIPC), 20018, Donostia-San Sebastian, Spain
| | - Marco Papagno
- Dipartimento di Fisica, Università della Calabria, 87036, Arcavacata di Rende (CS), Italy
| | - Giovanni Costantini
- Department of Chemistry, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, UK
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