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Bassi G, Kaur D, Dahiya R, Kumar M. 2D-3D heterostructure of PtS 2-x/Ga 2O 3and their band alignment studies for high performance and broadband photodetector. NANOTECHNOLOGY 2024; 35:325706. [PMID: 38710165 DOI: 10.1088/1361-6528/ad47c9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Accepted: 05/06/2024] [Indexed: 05/08/2024]
Abstract
For deep ultraviolet (UV-C) photodetectors, gallium oxide (Ga2O3) is a suitable candidate owing to its intrinsic ultra-wide band gap and high stability. However, its detection is limited within the UV-C region, which restricts it to cover a broad range, especially in visible and near-infrared (NIR) region. Therefore, constructing a heterostructure of Ga2O3with an appropriate material having a narrow band gap is a worthwhile approach to compensate for it. In this category, PtS2group-10 transitional metal dichalcogenide stands at the top owing to its narrow band gap (0.25-1.65 eV), high mobility, and stability for heterostructure synthesis. Moreover, heterostructure with Ga2O3sensing in UV and PtS2broad response in visible and IR range can broaden the spectrum from UV to NIR and to build broadband photodetector. In this work, we fabricated a 2D-3D PtS2-x/Ga2O3heterostructure based broadband photodetector with detection from UV-C to NIR region. In addition, the PtS2-x/Ga2O3device shows a high responsivity of 38.7 AW-1and detectivity of 4.8 × 1013Jones under 1100 nm light illumination at 5 V bias. A fast response of 90 ms/86 ms illustrates the device's fast speed. An interface study between the PtS2-xand Ga2O3was conducted using x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS) which confirmed type-I band alignment. Finally, based on their band alignment study, a carrier transport mechanism was proposed at the interface. This work offers a new opportunity to fabricate large-area high-performance 2D-3D heterostructures based photodetectors for future optoelectronics devices.
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Affiliation(s)
- Gaurav Bassi
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Damanpreet Kaur
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Rohit Dahiya
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Mukesh Kumar
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
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2
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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3
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Yang S, Sui F, Liu Y, Qi R, Feng X, Dong S, Yang P, Yue F. Anisotropy and thermal properties in GeTe semiconductor by Raman analysis. NANOSCALE 2023; 15:13297-13303. [PMID: 37539838 DOI: 10.1039/d3nr02678g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Low-symmetric GeTe semiconductors have attracted wide-ranging attention due to their excellent optical and thermal properties, but only a few research studies are available on their in-plane optical anisotropic nature that is crucial for their applications in optoelectronic and thermoelectric devices. Here, we investigate the optical interactions of anisotropy in GeTe using polarization-resolved Raman spectroscopy and first-principles calculations. After determining both armchair and zigzag directions in GeTe crystals by transmission electron microscopy, we found that the Raman intensity of the two main vibrational modes had a strong in-plane anisotropic nature; the one at ∼88.1 cm-1 can be used to determine the crystal orientation, and the other at ∼124.6 cm-1 can reveal a series of temperature-dependent phase transitions. These results provide a general approach for the investigation of the anisotropy of light-matter interactions in low-symmetric layered materials, benefiting the design and application of optoelectronic, anisotropic thermoelectric, and phase-transition memory devices based on bulk GeTe.
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Affiliation(s)
- Shuai Yang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
| | - Fengrui Sui
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
| | - Yucheng Liu
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
| | - Xiaoyu Feng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
| | - Shangwei Dong
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
| | - Pingxiong Yang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
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4
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Zhang H, Wang Z, Chen J, Tan C, Yin S, Zhang H, Wang S, Qin Q, Li L. Type-I PtS 2/MoS 2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity. NANOSCALE 2022; 14:16130-16138. [PMID: 36239166 DOI: 10.1039/d2nr04231b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Recent advances in two-dimensional (2D) materials play an essential role in boosting modern electronics and optoelectronics. Thus far, transition metal dichalcogenides (TMDs) as emerging members of 2D materials, and the van der Waals heterostructures (vdWHs) based on TMDs have been extensively investigated owing to their prominent capabilities and unique crystal structures. In this work, an original vdWH composed of molybdenum disulfide (MoS2) and platinum disulfide (PtS2) was comprehensively studied as a field-effect transistor (FET) and photodetector. A gate-tunable rectifying behavior was obtained, stemming from the band design of PtS2/MoS2 vdWH. Upon 685 nm laser illumination, it also exhibited a superior photodetection performance with a distinctly high photoresponsivity of 403 A W-1, a comparable detectivity of 1.07 × 1011 Jones, and an excellent external quantum efficiency of 7.32 × 104%. More importantly, fast rise (24 ms) and decay (21 ms) times were obtained under 685 nm light illumination attributed to the unilateral depletion region structure. Further, the photovoltaic effect and photocurrent of the heterojunction could be modulated by a back gate voltage. All these results indicated that such 2D-TMD-based vdWHs provide a new idea for realizing high-performance electronic and optoelectronic devices.
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Affiliation(s)
- Hui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Zihan Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Chaoyang Tan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hanlin Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Shaotian Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Qinggang Qin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
- University of Science and Technology of China, Hefei 230026, P.R. China
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5
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Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films. ELECTRONICS 2022. [DOI: 10.3390/electronics11060838] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.
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6
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Zhang X, Su G, Lu J, Yang W, Zhuang W, Han K, Wang X, Wan Y, Yu X, Yang P. Centimeter-Scale Few-Layer PdS 2: Fabrication and Physical Properties. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43063-43074. [PMID: 34473488 DOI: 10.1021/acsami.1c11824] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
To develop next-generation electronic devices, novel semiconductive materials are urgently required. The transition metal dichalcogenides (TMDs) hold the promise of next generation of semiconductor materials for emerging electronic applications. As a member of the group-10 TMDs, PdS2 has a notable layer-number-dependent band structure and tremendously high carrier mobility at room temperature. Here, we demonstrate the experimental realization of centimeter-scale synthesis of the few-layer PdS2 by the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. For the first time, the optical anisotropic properties of the few-layer PdS2 were investigated through angle-resolved polarized Raman spectroscopy. Also, the evolution of Raman spectra was studied depending on the temperature in the range of 12-300 K. To further understand the electronic properties of the few-layer PdS2, the field-effect transistor (FET) devices were fabricated and investigated. The electronic measurements of such FET devices reveal that the PdS2 materials exhibit a tunable ambipolar transport mechanism with field-effect mobility of up to ∼388 cm2 V-1 s-1 and the on/off ratio of ∼800, which were not reported before in the literature. To well understand the experimental results, the electronic structure of PdS2 was determined using density functional theory (DFT) calculations. These excellent physical properties are very helpful in developing high-performance opto-electronic applications.
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Affiliation(s)
- Xudong Zhang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Guowen Su
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Jiangwei Lu
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Wangfan Yang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Wenbo Zhuang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Kai Han
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Xiao Wang
- Faculty of Materials Science & Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China
| | - Yanfen Wan
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Xiaohua Yu
- Faculty of Materials Science & Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China
| | - Peng Yang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
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7
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Tan C, Yin S, Chen J, Lu Y, Wei W, Du H, Liu K, Wang F, Zhai T, Li L. Broken-Gap PtS 2/WSe 2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse. ACS NANO 2021; 15:8328-8337. [PMID: 33645213 DOI: 10.1021/acsnano.0c09593] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Broken-gap van der Waals (vdW) heterojunctions based on 2D materials are promising structures to fabricate high-speed switching and low-power multifunctional devices thanks to its charge transport versus quantum tunneling mechanism. However, the tunneling current is usually generated under both positive and negative bias voltage, resulting in small rectification and photocurrent on/off ratio. In this paper, we report a broken-gap vdW heterojunction PtS2/WSe2 with a bilateral accumulation region design and a big band offset by utilizing thick PtS2 as an effective carrier-selective contact, which exhibits an ultrahigh reverser rectification ratio approaching 108 and on/off ratio over 108 at room temperature. We also find excellent photodetection properties in such a heterodiode with a large photocurrent on/off ratio over 105 due to its ultralow forward current and a comparable photodetectivity of 3.8 × 1010 Jones. In addition, the response time of such a photodetector reaches 8 μs owing to the photoinduced tunneling mechanism and reduced interface trapping effect. The proposed heterojunction not only demonstrates the high-performance broken-gap heterodiode but also provides in-depth understanding of the tunneling mechanism in the development of future electronic and optoelectronic applications.
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Affiliation(s)
- Chaoyang Tan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Jiawang Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Yuan Lu
- Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, National University of Defense Technology (NUDT), Hefei 230037, People's Republic of China
- State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology (NUDT), Hefei 230037, People's Republic of China
| | - Wensen Wei
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Science, Hefei 230031, People's Republic of China
| | - Haifeng Du
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Science, Hefei 230031, People's Republic of China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
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8
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Wang FY, Wang XF. Effects of hydrogenation and strain on the electronic properties of armchair PtS2 nanoribbons. APPLIED NANOSCIENCE 2021. [DOI: 10.1007/s13204-021-01834-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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9
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Cullen CP, Ó Coileáin C, McManus JB, Hartwig O, McCloskey D, Duesberg GS, McEvoy N. Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide. NANOSCALE 2021; 13:7403-7411. [PMID: 33889876 DOI: 10.1039/d0nr06197b] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS2 has been investigated for potential electronic applications, due to its high charge-carrier mobility and strongly layer-dependent bandgap, it has proven to be one of the more difficult TMDs to synthesise. In contrast to most TMDs, Pt has a significantly more stable monosulfide, the non-layered PtS. The existence of two stable platinum sulfides, sometimes within the same sample, has resulted in much confusion between the materials in the literature. Neither of these Pt sulfides have been thoroughly characterised as-of-yet. Here we utilise time-efficient, scalable methods to synthesise high-quality thin films of both Pt sulfides on a variety of substrates. The competing nature of the sulfides and limited thermal stability of these materials is demonstrated. We report peak-fitted X-ray photoelectron spectra, and Raman spectra using a variety of laser wavelengths, for both materials. This systematic characterisation provides a guide to differentiate between the sulfides using relatively simple methods which is essential to enable future work on these interesting materials.
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Affiliation(s)
- Conor P Cullen
- School of Chemistry, Trinity College Dublin, Dublin 2, D02 PN40, Ireland.
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10
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Sattar S, Larsson JA. Rashba Effect and Raman Spectra of Tl 2O/PtS 2 Heterostructure. ACS OMEGA 2021; 6:4044-4050. [PMID: 33585779 PMCID: PMC7876842 DOI: 10.1021/acsomega.0c06043] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Accepted: 01/12/2021] [Indexed: 06/12/2023]
Abstract
The possibility to achieve charge-to-spin conversion via Rashba spin-orbit effects provides stimulating opportunities toward the development of nanoscale spintronics. Here, we use first-principles calculations to study the electronic and spintronic properties of Tl2O/PtS2 heterostructure, for which we have confirmed the dynamical stability by its positive phonon frequencies. An unexpectedly high binding energy of -0.38 eV per unit cell depicts strong interlayer interactions between Tl2O and PtS2. Interestingly, we discover Rashba spin-splittings (with a large α R value) in the valence band of Tl2O stemming from interfacial spin-orbit effects caused by PtS2. The role of van der Waals binding on the orbital rearrangements has been studied using the electron localization function and atomic orbital projections, which explains in detail the electronic dispersion near the Fermi level. Moreover, we explain the distinct band structure alignment in momentum space but separation in real space of Tl2O/PtS2 heterostructure. Since two-dimensional (2D) Tl2O still awaits experimental confirmation, we calculate, for the first time, the Raman spectra of pristine Tl2O and the Tl2O/PtS2 heterostructure and discuss peak positions corresponding to vibrational modes of the atoms. These findings offer a promising avenue to explore spin physics for potential spintronics applications via 2D heterostructures.
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11
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Zhussupbekov K, Cullen CP, Zhussupbekova A, Shvets IV, Duesberg GS, McEvoy N, Ó Coileáin C. Electronic and structural characterisation of polycrystalline platinum disulfide thin films. RSC Adv 2020; 10:42001-42007. [PMID: 35516737 PMCID: PMC9057923 DOI: 10.1039/d0ra07405e] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2020] [Accepted: 11/02/2020] [Indexed: 12/15/2022] Open
Abstract
We employ a combination of scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) to investigate the properties of layered PtS2, synthesised via thermally assisted conversion (TAC) of a metallic Pt thin film. STM measurements reveal the 1T crystal structure of PtS2, and the lattice constant is determined to be 3.58 ± 0.03 Å. STS allowed the electronic structure of individual PtS2 crystallites to be directly probed and a bandgap of ∼1.03 eV was determined for a 3.8 nm thick flake at liquid nitrogen temperature. These findings substantially expand understanding of the atomic and electronic structure of PtS2 and indicate that STM is a powerful tool capable of locally probing non-uniform polycrystalline films, such as those produced by TAC. Prior to STM/STS measurements the quality of synthesised TAC PtS2 was analysed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. These results are of relevance to applications-focussed studies centred on PtS2 and may inform future efforts to optimise the synthesis conditions for thin film PtS2. Semiconducting thin-film polycrystalline PtS2 is characterised by atomically resolved scanning tunnelling microscopy and spectroscopy.![]()
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Affiliation(s)
- Kuanysh Zhussupbekov
- School of Physics, Trinity College Dublin Dublin 2 Ireland .,AMBER Centre, CRANN Institute, Trinity College Dublin Dublin 2 Ireland
| | - Conor P Cullen
- AMBER Centre, CRANN Institute, Trinity College Dublin Dublin 2 Ireland .,School of Chemistry, Trinity College Dublin Dublin 2 D02 PN40 Ireland
| | - Ainur Zhussupbekova
- School of Physics, Trinity College Dublin Dublin 2 Ireland .,AMBER Centre, CRANN Institute, Trinity College Dublin Dublin 2 Ireland
| | - Igor V Shvets
- School of Physics, Trinity College Dublin Dublin 2 Ireland .,AMBER Centre, CRANN Institute, Trinity College Dublin Dublin 2 Ireland
| | - Georg S Duesberg
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München 85579 Neubiberg Germany
| | - Niall McEvoy
- AMBER Centre, CRANN Institute, Trinity College Dublin Dublin 2 Ireland .,School of Chemistry, Trinity College Dublin Dublin 2 D02 PN40 Ireland
| | - Cormac Ó Coileáin
- AMBER Centre, CRANN Institute, Trinity College Dublin Dublin 2 Ireland .,School of Chemistry, Trinity College Dublin Dublin 2 D02 PN40 Ireland
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12
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Xu H, Huang HP, Fei H, Feng J, Fuh HR, Cho J, Choi M, Chen Y, Zhang L, Chen D, Zhang D, Coileáin CÓ, Han X, Chang CR, Wu HC. Strategy for Fabricating Wafer-Scale Platinum Disulfide. ACS APPLIED MATERIALS & INTERFACES 2019; 11:8202-8209. [PMID: 30729782 DOI: 10.1021/acsami.8b19218] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
PtS2 is a newly developed group 10 2D layered material with high carrier mobility, wide band gap tunability, strongly bound excitons, symmetrical metallic and magnetic edge states, and ambient stability, making it attractive in nanoelectronic, optoelectronic, and spintronic fields. To the aim of application, a large-scale synthesis is necessary. For transition-metal dichalcogenide (TMD) compounds, a thermally assisted conversion method has been widely used to fabricate wafer-scale thin films. However, PtS2 cannot be easily synthesized using the method, as the tetragonal PtS phase is more stable. Here, we use a specified quartz part to locally increase the vapor pressure of sulfur in a chemical vapor deposition furnace and successfully extend this method for the synthesis of PtS2 thin films in a scalable and controllable manner. Moreover, the PtS and PtS2 phases can be interchangeably converted through a proposed strategy. Field-effect transistor characterization and photocurrent measurements suggest that PtS2 is an ambipolar semiconductor with a narrow band gap. Moreover, PtS2 also shows excellent gas-sensing performance with a detection limit of ∼0.4 ppb for NO2. Our work presents a relatively simple way of synthesizing PtS2 thin films and demonstrates their promise for high-performance ultrasensitive gas sensing, broadband optoelectronics, and nanoelectronics in a scalable manner. Furthermore, the proposed strategy is applicable for making other PtX2 compounds and TMDs which are compatible with modern silicon technologies.
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Affiliation(s)
- Hongjun Xu
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
| | - Hsin-Pan Huang
- Graduate Institute of Applied Physics , National Taiwan University , Taipei 106 , Taiwan
| | - HaiFeng Fei
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
| | - Jiafeng Feng
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Huei-Ru Fuh
- Department of Chemical Engineering & Materials Science , Yuan Ze University , Taoyuan City 320 , Taiwan
| | - Jiung Cho
- Western Seoul Center , Korea Basic Science Institute , Seoul 03579 , Republic of Korea
| | - Miri Choi
- Chuncheon Center , Korea Basic Science Institute , Chuncheon 24341 , Republic of Korea
| | - Yanhui Chen
- Institute of Microstructure and Property of Advanced Materials , Beijing University of Technology , Beijing 100124 , China
| | - Lei Zhang
- School of Chemical Engineering and Technology , Tianjin University , Tianjin 300072 , P. R. China
| | - Dengyun Chen
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
| | - Duan Zhang
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
| | - Cormac Ó Coileáin
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
- School of Chemistry, AMBER and CRANN , Trinity College Dublin , Dublin 2 , Ireland
| | - Xiufeng Han
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Ching-Ray Chang
- Graduate Institute of Applied Physics , National Taiwan University , Taipei 106 , Taiwan
- Department of Physics , National Taiwan University , Taipei 106 , Taiwan
| | - Han-Chun Wu
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
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