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Yan W, Fuh HR, Lv Y, Chen KQ, Tsai TY, Wu YR, Shieh TH, Hung KM, Li J, Zhang D, Ó Coileáin C, Arora SK, Wang Z, Jiang Z, Chang CR, Wu HC. Giant gauge factor of Van der Waals material based strain sensors. Nat Commun 2021; 12:2018. [PMID: 33795697 PMCID: PMC8016834 DOI: 10.1038/s41467-021-22316-8] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2020] [Accepted: 03/10/2021] [Indexed: 02/07/2023] Open
Abstract
There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS2 sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS2, GaSe, GeSe, monolayer WSe2, and monolayer MoSe2 sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements.
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Affiliation(s)
- Wenjie Yan
- School of Physics, Beijing Institute of Technology, Beijing, P. R. China
| | - Huei-Ru Fuh
- Department of Physics, National Taiwan University, Taipei, Taiwan
- Department of Chemical Engineering & Materials Science, Yuan Ze University, Taoyuan City, Taiwan
| | - Yanhui Lv
- School of Physics, Beijing Institute of Technology, Beijing, P. R. China
| | - Ke-Qiu Chen
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Tsung-Yin Tsai
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
| | - Yuh-Renn Wu
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
| | - Tung-Ho Shieh
- Department of Intelligent Robotics Engineering, Kun-Shan University, Tainan, Taiwan
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan.
| | - Juncheng Li
- School of Physics, Beijing Institute of Technology, Beijing, P. R. China
| | - Duan Zhang
- Elementary Educational College, Beijing key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing, P. R. China
| | - Cormac Ó Coileáin
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School Chemistry, Trinity College Dublin, Dublin, Ireland
| | - Sunil K Arora
- Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh, India
| | - Zhi Wang
- School of Physics, Beijing Institute of Technology, Beijing, P. R. China
| | - Zhaotan Jiang
- School of Physics, Beijing Institute of Technology, Beijing, P. R. China
| | - Ching-Ray Chang
- Department of Physics, National Taiwan University, Taipei, Taiwan
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing, P. R. China.
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2
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Huang HP, Fuh HR, Chang CR. Enhanced Sensitivity of CO on Two-Dimensional, Strained, and Defective GaSe. Molecules 2021; 26:molecules26040812. [PMID: 33557262 PMCID: PMC7915681 DOI: 10.3390/molecules26040812] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 01/25/2021] [Accepted: 01/27/2021] [Indexed: 11/16/2022] Open
Abstract
The toxic gas carbon monoxide (CO) is fatal to human beings and it is hard to detect because of its colorless and odorless properties. Fortunately, the high surface-to-volume ratio of the gas makes two-dimensional (2D) materials good candidates for gas sensing. This article investigates CO sensing efficiency with a two-dimensional monolayer of gallium selenide (GaSe) via the vacancy defect and strain effect. According to the computational results, defective GaSe structures with a Se vacancy have a better performance in CO sensing than pristine ones. Moreover, the adsorption energy gradually increases with the scale of tensile strain in defective structures. The largest adsorption energy reached −1.5 eV and the largest charger transfer was about −0.77 e. Additionally, the CO gas molecule was deeply dragged into the GaSe surface. We conclude that the vacancy defect and strain effect transfer GaSe to a relatively unstable state and, therefore, enhance CO sensitivity. The adsorption rate can be controlled by adjusting the strain scale. This significant discovery makes the monolayer form of GaSe a promising candidate in CO sensing. Furthermore, it reveals the possibility of the application of CO adsorption, transportation, and releasement.
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Affiliation(s)
- Hsin-Pan Huang
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
- Correspondence: or ; Tel.: +886-970-810-815
| | - Huei-Ru Fuh
- Department of Chemical Engineering and Materials Science, Yuan Ze University, Taoyuan 32003, Taiwan;
| | - Ching-Ray Chang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan;
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Camargo Moreira ÓL, Cheng WY, Fuh HR, Chien WC, Yan W, Fei H, Xu H, Zhang D, Chen Y, Zhao Y, Lv Y, Wu G, Lv C, Arora SK, Ó Coileáin C, Heng C, Chang CR, Wu HC. High Selectivity Gas Sensing and Charge Transfer of SnSe 2. ACS Sens 2019; 4:2546-2552. [PMID: 31456397 DOI: 10.1021/acssensors.9b01461] [Citation(s) in RCA: 44] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
SnSe2 is an anisotropic binary-layered material with rich physics, which could see it used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe2 using first-principles calculations and verify predictions using a gas sensor made of few-layer SnSe2 grown by chemical vapor deposition. Theoretical simulations indicate that electrons transfer from SnSe2 to NO2, whereas the direction of charge transfer is the opposite for NH3. Notably, a flat molecular band appears around the Fermi energy after NO2 adsorption and the induced molecular band is close to the conduction band minimum. Moreover, compared with NH3, NO2 molecules adsorbed on SnSe2 have a lower adsorption energy and a higher charge transfer value. The dynamic-sensing responses of SnSe2 sensors confirm the theoretical predictions. The good match between the theoretical prediction and experimental demonstration suggests that the underlying sensing mechanism is related to the charge transfer and induced flat band. Our results provide a guideline for designing high-performance gas sensors based on SnSe2.
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Affiliation(s)
| | | | - Huei-Ru Fuh
- Department of Chemical Engineering & Materials Science, Yuan Ze University, Taoyuan City 320, Taiwan, ROC
| | | | - Wenjie Yan
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Haifeng Fei
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Hongjun Xu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Duan Zhang
- Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048, P. R. China
| | - Yanhui Chen
- Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Yanfeng Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yanhui Lv
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chengzhai Lv
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Sunil K. Arora
- Centre for Nano Science and Nano Technology, Panjab University, Chandigarh160014, India
| | - Cormac Ó Coileáin
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Chenglin Heng
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | | | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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Xu H, Huang HP, Fei H, Feng J, Fuh HR, Cho J, Choi M, Chen Y, Zhang L, Chen D, Zhang D, Coileáin CÓ, Han X, Chang CR, Wu HC. Strategy for Fabricating Wafer-Scale Platinum Disulfide. ACS Appl Mater Interfaces 2019; 11:8202-8209. [PMID: 30729782 DOI: 10.1021/acsami.8b19218] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
PtS2 is a newly developed group 10 2D layered material with high carrier mobility, wide band gap tunability, strongly bound excitons, symmetrical metallic and magnetic edge states, and ambient stability, making it attractive in nanoelectronic, optoelectronic, and spintronic fields. To the aim of application, a large-scale synthesis is necessary. For transition-metal dichalcogenide (TMD) compounds, a thermally assisted conversion method has been widely used to fabricate wafer-scale thin films. However, PtS2 cannot be easily synthesized using the method, as the tetragonal PtS phase is more stable. Here, we use a specified quartz part to locally increase the vapor pressure of sulfur in a chemical vapor deposition furnace and successfully extend this method for the synthesis of PtS2 thin films in a scalable and controllable manner. Moreover, the PtS and PtS2 phases can be interchangeably converted through a proposed strategy. Field-effect transistor characterization and photocurrent measurements suggest that PtS2 is an ambipolar semiconductor with a narrow band gap. Moreover, PtS2 also shows excellent gas-sensing performance with a detection limit of ∼0.4 ppb for NO2. Our work presents a relatively simple way of synthesizing PtS2 thin films and demonstrates their promise for high-performance ultrasensitive gas sensing, broadband optoelectronics, and nanoelectronics in a scalable manner. Furthermore, the proposed strategy is applicable for making other PtX2 compounds and TMDs which are compatible with modern silicon technologies.
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Affiliation(s)
- Hongjun Xu
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
| | - Hsin-Pan Huang
- Graduate Institute of Applied Physics , National Taiwan University , Taipei 106 , Taiwan
| | - HaiFeng Fei
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
| | - Jiafeng Feng
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Huei-Ru Fuh
- Department of Chemical Engineering & Materials Science , Yuan Ze University , Taoyuan City 320 , Taiwan
| | - Jiung Cho
- Western Seoul Center , Korea Basic Science Institute , Seoul 03579 , Republic of Korea
| | - Miri Choi
- Chuncheon Center , Korea Basic Science Institute , Chuncheon 24341 , Republic of Korea
| | - Yanhui Chen
- Institute of Microstructure and Property of Advanced Materials , Beijing University of Technology , Beijing 100124 , China
| | - Lei Zhang
- School of Chemical Engineering and Technology , Tianjin University , Tianjin 300072 , P. R. China
| | - Dengyun Chen
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
| | - Duan Zhang
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
| | - Cormac Ó Coileáin
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
- School of Chemistry, AMBER and CRANN , Trinity College Dublin , Dublin 2 , Ireland
| | - Xiufeng Han
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Ching-Ray Chang
- Graduate Institute of Applied Physics , National Taiwan University , Taipei 106 , Taiwan
- Department of Physics , National Taiwan University , Taipei 106 , Taiwan
| | - Han-Chun Wu
- School of Physics , Beijing Institute of Technology , Beijing 100081 , People's Republic of China
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5
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Yan WJ, Chen DY, Fuh HR, Li YL, Zhang D, Liu H, Wu G, Zhang L, Ren X, Cho J, Choi M, Chun BS, Coileáin CÓ, Xu HJ, Wang Z, Jiang Z, Chang CR, Wu HC. Photo-enhanced gas sensing of SnS2 with nanoscale defects. RSC Adv 2019; 9:626-635. [PMID: 35517585 PMCID: PMC9059496 DOI: 10.1039/c8ra08857h] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2018] [Accepted: 12/20/2018] [Indexed: 11/21/2022] Open
Abstract
Recently a SnS2 based NO2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO2 gas sensor based on SnS2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS2. More interestingly, when electron–hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO2 concentration, while the average desorption time always decreases with NO2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials. A photon assisted SnS2-based gas sensor with an ultra-high sensitivity of 3 ppb NO2 has been achieved at room temperature.![]()
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Cheung CH, Fuh HR, Hsu MC, Lin YC, Chang CR. Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene. Nanoscale Res Lett 2016; 11:459. [PMID: 27757940 PMCID: PMC5069223 DOI: 10.1186/s11671-016-1666-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/02/2016] [Accepted: 09/29/2016] [Indexed: 06/06/2023]
Abstract
Recently, searching large-bulk band gap topological insulator (TI) is under intensive study. Through k·P theory and first-principles calculations analysis on antimonene, we find that α-phase antimonene can be tuned to a 2D TI under an in-plane anisotropic strain and the magnitude of direct bulk band gap (SOC gap) depends on the strength of spin-orbit coupling (SOC) which is strain-dependent. As the band inversion of this TI accompanies with an indirect band gap, the TI bulk band gap is the indirect band gap, not the SOC gap. SOC gap can be enhanced by increasing strain, whereas the indirect band gap can be closed by increasing strain, such that large bulk band gap are forbidden. With the k·P theory analysis on antimonene, we know how to avoid such an indirect band gap. In case of indirect band gap avoided, the SOC gap could become the bulk band gap of a TI which can be enhanced by strain. Thus our theoretical analysis can help searching large bulk band gap TI.
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Affiliation(s)
- Chi-Ho Cheung
- Graduate Institute of Applied Physics, National Taiwan University, Taipei, 10617, Taiwan.
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan.
| | - Huei-Ru Fuh
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
| | - Ming-Chien Hsu
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
| | - Yeu-Chung Lin
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
| | - Ching-Ray Chang
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
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Fuh HR, Chang CR, Wang YK, Evans RFL, Chantrell RW, Jeng HT. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te). Sci Rep 2016; 6:32625. [PMID: 27601195 PMCID: PMC5013522 DOI: 10.1038/srep32625] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2015] [Accepted: 08/11/2016] [Indexed: 12/22/2022] Open
Abstract
We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics.
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Affiliation(s)
- Huei-Ru Fuh
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
| | - Ching-Ray Chang
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yin-Kuo Wang
- Center for General Education and Department of Physics, National Taiwan Normal University, Taipei 106, Taiwan
| | | | | | - Horng-Tay Jeng
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
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