Controlling the number of layers in graphene using the growth pressure

Fast synthesis of large-area bilayer graphene film on Cu

Bilayer graphene (BLG) is intriguing for its unique properties and potential applications in electronics, photonics, and mechanics. However, the chemical vapor deposition synthesis of large-area high-quality bilayer graphene on Cu is suffering from a low growth rate and limited bilayer coverage. Herein, we demonstrate the fast synthesis of meter-sized bilayer graphene film on commercial polycrystalline Cu foils by introducing trace CO₂ during high-temperature growth. Continuous bilayer graphene with a high ratio of AB-stacking structure can be obtained within 20 min, which exhibits enhanced mechanical strength, uniform transmittance, and low sheet resistance in large area. Moreover, 96 and 100% AB-stacking structures were achieved in bilayer graphene grown on single-crystal Cu(111) foil and ultraflat single-crystal Cu(111)/sapphire substrates, respectively. The AB-stacking bilayer graphene exhibits tunable bandgap and performs well in photodetection. This work provides important insights into the growth mechanism and the mass production of large-area high-quality BLG on Cu.

Conversion of Carbon Dioxide into Chemical Vapor Deposited Graphene with Controllable Number of Layers via Hydrogen Plasma Pre-Treatment

In this work, we report the conversion of carbon dioxide (CO₂) gas into graphene on copper foil by using a thermal chemical vapor deposition (CVD) method assisted by hydrogen (H₂) plasma pre-treatment. The synthesized graphene has been characterized by Raman spectroscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results show the controllable number of layers (two to six layers) of high-quality graphene by adjusting H₂ plasma pre-treatment powers (100-400 W). The number of layers is reduced with increasing H₂ plasma pre-treatment powers due to the direct modification of metal catalyst surfaces. Bilayer graphene can be well grown with H₂ plasma pre-treatment powers of 400 W while few-layer graphene has been successfully formed under H₂ plasma pre-treatment powers ranging from 100 to 300 W. The formation mechanism is highlighted.

Graphene Growth on Electroformed Copper Substrates by Atmospheric Pressure CVD

Chemical vapor deposition (CVD) is regarded as the most promising technique for the mass production of graphene. CVD synthesis under vacuum is the most employed process, because the slower kinetics give better control on the graphene quality, but the requirement for high-vacuum equipment heavily affects the overall energy cost. In this work, we explore the possibility of using electroformed Cu substrate as a catalyst for atmospheric-pressure graphene growth. Electrochemical processes can produce high purity, freestanding metallic films, avoiding the surface defects that characterize the rolled foils. It was found that the growth mode of graphene on the electroformed catalyst was related to the surface morphology, which, in turn, was affected by the preliminary treatment of the substrate material. Suitable conditions for growing single layer graphene were identified.

Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS)

The demand for graphene-based devices is rapidly growing but there are significant challenges for developing scalable and repeatable processes for the manufacturing of graphene devices. Basic research on understanding and controlling growth mechanisms have recently enabled various mass production approaches over the past decade. However, the integration of graphene with Micro-Nano Electromechanical Systems (MEMS/NEMS) has been especially challenging due to performance sensitivities of these systems to the production process. Therefore, ability to produce graphene-based devices on a large scale with high repeatability is still a major barrier to the commercialization of graphene. In this review article, we discuss the merits of integrating graphene into Micro-Nano Electromechanical Systems, current approaches for the mass production of graphene integrated devices, and propose solutions to overcome current manufacturing limits for the scalable and repeatable production of integrated graphene-based devices.

Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

Graphenic Materials for Biomedical Applications

Graphene-based nanomaterials have been intensively studied for their properties, modifications, and application potential. Biomedical applications are one of the main directions of research in this field. This review summarizes the research results which were obtained in the last two years (2017-2019), especially those related to drug/gene/protein delivery systems and materials with antimicrobial properties. Due to the large number of studies in the area of carbon nanomaterials, attention here is focused only on 2D structures, i.e. graphene, graphene oxide, and reduced graphene oxide.