Superconducting vanadium/indium-arsenide hybrid nanowires

Shadowed versus Etched Superconductor-Semiconductor Junctions in Al/InAs Nanowires

Hybrid semiconductor-superconductor nanowires have emerged as a cornerstone in modern quantum devices. Integrating such nanowires into hybrid devices typically requires extensive postgrowth processing which may affect device performance unfavorably. Here, we present a technique for in situ shadowing superconductors on nanowires and compare the structural and electronic properties of Al junctions formed by shadowing versus etching. Based on transmission electron microscopy, we find that typical etching procedures lead to atomic-scale surface roughening. This surface perturbation may cause a reduction of the electron mobility as demonstrated in transport measurements. Further, we display advanced shadowing geometries aiding in the pursuit of bringing fabrication of hybrid devices in situ. Finally, we give examples of shadowed junctions exploited in various device geometries that exhibit high-quality quantum transport signatures.

Electronic Transport and Quantum Phenomena in Nanowires

Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.

Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates

Metal deposition with cryogenic cooling is a common technique in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a significant challenge arises when these films return to room temperature, as they tend to undergo dewetting. This issue can be mitigated by capping the films with an amorphous layer. In this study, we investigate the influence of differentin situfabricated caps on the structural characteristics of Sn thin films deposited at 80 K on InSb substrates. Regardless of the type of capping, we consistently observe that the films remain smooth upon returning to room temperature and exhibit epitaxy on InSb in the cubic Sn (α-Sn) phase. Notably, we identify a correlation between alumina capping using an electron beam evaporator and an increased presence of tetragonal Sn (β-Sn) grains. This suggests that heating from the alumina source may induce a partial phase transition in the Sn layer. The existence of theβ-Sn phase induces superconducting behavior of the films by percolation effect. This study highlights the potential for tailoring the structural properties of cryogenic Sn thin films throughin situcapping. This development opens avenues for precise control in the production of superconducting Sn films, facilitating their integration into quantum computing platforms.

Intrinsic Magnetic (EuIn)As Nanowire Shells with a Unique Crystal Structure

In the pursuit of magneto-electronic systems nonstoichiometric magnetic elements commonly introduce disorder and enhance magnetic scattering. We demonstrate the growth of (EuIn)As shells, with a unique crystal structure comprised of a dense net of Eu inversion planes, over InAs and InAs_1-xSb_x core nanowires. This is imaged with atomic and elemental resolution which reveal a prismatic configuration of the Eu planes. The results are supported by molecular dynamics simulations. Local magnetic and susceptibility mappings show magnetic response in all nanowires, while a subset bearing a DC signal points to ferromagnetic order. These provide a mechanism for enhancing Zeeman responses, operational at zero applied magnetic field. Such properties suggest that the obtained structures can serve as a preferred platform for time-reversal symmetry broken one-dimensional states including intrinsic topological superconductivity.

Semiconductor Epitaxy in Superconducting Templates

Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.

Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires

We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ∼ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ∼ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.

Shadow-wall lithography of ballistic superconductor-semiconductor quantum devices

The realization of hybrid superconductor-semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of hybrid quantum devices and ultimately topological qubits while eliminating fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.

Epitaxial Pb on InAs nanowires for quantum devices

Semiconductor-superconductor hybrids are widely used to realize complex quantum phenomena, such as topological superconductivity and spins coupled to Cooper pairs. Accessing new, exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. One challenge is the generation of favourable conditions for heterostructural formation between materials with the desired properties. Here we harness an increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single-crystal, atomically flat Pb films with no axial grain boundaries. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, and therefore they offer a parameter space more than twice as large as those of alternative semiconductor-superconductor hybrids. Additionally, InAs/Pb island devices exhibit magnetic field-driven transitions from a Cooper pair to single-electron charging, a prerequisite for use in topological quantum computation. Semiconductor-Pb hybrids potentially enable access to entirely new regimes for a number of different quantum systems.

Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells

Improving materials used to make qubits is crucial to further progress in quantum information processing. Of particular interest are semiconductor-superconductor heterostructures that are expected to form the basis of topological quantum computing. We grew semiconductor indium antimonide nanowires that were coated with shells of tin of uniform thickness. No interdiffusion was observed at the interface between Sn and InSb. Tunnel junctions were prepared by in situ shadowing. Despite the lack of lattice matching between Sn and InSb, a 15-nanometer-thick shell of tin was found to induce a hard superconducting gap, with superconductivity persisting in magnetic field up to 4 teslas. A small island of Sn-InSb exhibits the two-electron charging effect. These findings suggest a less restrictive approach to fabricating superconducting and topological quantum circuits.

Microbially-Enhanced Vanadium Mining and Bioremediation Under Micro- and Mars Gravity on the International Space Station

As humans explore and settle in space, they will need to mine elements to support industries such as manufacturing and construction. In preparation for the establishment of permanent human settlements across the Solar System, we conducted the ESA BioRock experiment on board the International Space Station to investigate whether biological mining could be accomplished under extraterrestrial gravity conditions. We tested the hypothesis that the gravity (g) level influenced the efficacy with which biomining could be achieved from basalt, an abundant material on the Moon and Mars, by quantifying bioleaching by three different microorganisms under microgravity, simulated Mars and Earth gravitational conditions. One element of interest in mining is vanadium (V), which is added to steel to fabricate high strength, corrosion-resistant structural materials for buildings, transportation, tools and other applications. The results showed that Sphingomonas desiccabilis and Bacillus subtilis enhanced the leaching of vanadium under the three gravity conditions compared to sterile controls by 184.92 to 283.22%, respectively. Gravity did not have a significant effect on mean leaching, thus showing the potential for biomining on Solar System objects with diverse gravitational conditions. Our results demonstrate the potential to use microorganisms to conduct elemental mining and other bioindustrial processes in space locations with non-1 × g gravity. These same principles apply to extraterrestrial bioremediation and elemental recycling beyond Earth.

Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowires grown selectively on two adjacent tilted Si (111) facets and crossing each other at a small distance. The upper wire relative to the deposition source acts as a shadow mask determining the gap of the superconducting electrodes on the lower nanowire. Electron microscopy measurements show that the fully in situ fabrication method gives a clean InAs/Nb interface. A clear Josephson supercurrent is observed in the current-voltage characteristics, which can be controlled by a bottom gate. The large excess current indicates a high junction transparency. Under microwave radiation, pronounced integer Shapiro steps are observed suggesting a sinusoidal current-phase relation. Owing to the large critical field of Nb, the Josephson supercurrent can be maintained to magnetic fields exceeding 1 T. Our results show that in situ prepared Nb/InAs nanowire contacts are very interesting candidates for superconducting quantum circuits requiring large magnetic fields.

Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. This work introduces a crystal growth platform-based on 3D structuring of growth substrates-which enables synthesis of semiconductor nanowire hybrids with in situ patterned superconductor shells. The platform eliminates the need for etching, thereby enabling full freedom in the choice of hybrid constituents. All of the most frequently used superconducting hybrid device architectures are realized and characterized. These devices exhibit increased yield and electrostatic stability compared to etched devices, and evidence of ballistic superconductivity is observed. In addition to aluminum, hybrid structures based on tantalum, niobium, and vanadium are presented.

Multifunctional inorganic nanomaterials for energy applications

Our society has been facing more and more serious challenges towards achieving highly efficient utilization of energy. In the field of energy applications, multifunctional nanomaterials have been attracting increasing attention. Various energy applications, such as energy generation, conversion, storage, saving and transmission, are strongly dependent upon the electrical, thermal, mechanical, optical and catalytic functions of materials. In the nanoscale range, thermoelectric, piezoelectric, triboelectric, photovoltaic, catalytic and electrochromic materials have made major contributions to various energy applications. Inorganic nanomaterials' unique properties, such as excellent electrical and thermal conductivity, large surface area and chemical stability, make them highly competitive in energy applications. In this review, the latest research and development of multifunctional inorganic nanomaterials in energy applications were summarized from the perspective of different energy applications. Furthermore, we also illustrated the unique functions of inorganic nanomaterials to improve their performances and the combination of the functions of nanomaterials into a device. However, challenges may be traced back to the limitations set by scaling the relations between multifunctional inorganic nanomaterials and energy devices.