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Jahn YM, Alboteanu G, Mordehai D, Ya'akobovitz A. Strain engineering of the mechanical properties of two-dimensional WS 2. NANOSCALE ADVANCES 2024; 6:4062-4070. [PMID: 39114146 PMCID: PMC11302181 DOI: 10.1039/d3na00990d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 06/26/2024] [Indexed: 08/10/2024]
Abstract
Tuning the physical properties of two-dimensional (2D) materials is crucial for their successful integration into advanced applications. While strain engineering demonstrated an efficient means to modulate the electrical and optical properties of 2D materials, tuning their mechanical properties has not been carried out. Here we applied compressive strain through the buckling metrology to 2D tungsten disulfide (WS2), which demonstrated mechanical softening manifested by the reduction of its effective Young's modulus. Raman modes analysis of the strained WS2 also showed strain-dependent vibrational modes softening and revealed its Grüneisen parameter (γ E2g = 0.29) and its shear deformation potential (β E2g = 0.56) - both are similar to the values of other 2D materials. In parallel, we conducted a molecular dynamic simulation that confirmed the validity of continuum mechanics modeling in the nanoscale and revealed that due to sequential atomic-scale buckling events in compressed WS2, it shows a mechanical softening. Therefore, by tuning the mechanical properties of WS2 we shed light on its fundamental physics, thus making it an attractive candidate material for high-end applications, such as tunable sensors and flexible optoelectronic devices.
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Affiliation(s)
- Yarden Mazal Jahn
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev Israel
| | - Guy Alboteanu
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev Israel
| | - Dan Mordehai
- Faculty of Mechanical Engineering, Technion Israel Institute of Technology Haifa Israel
| | - Assaf Ya'akobovitz
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev Israel
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2
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Liang J, Zou Z, Zhao Z, Hui B, Tian W, Zhang K. Intelligent Gas Detection: g-C 3N 4/Polypyrrole Decorated Alginate Paper as Smart Selective NH 3/NO 2 Sensors at Room Temperature. Inorg Chem 2024; 63:12516-12524. [PMID: 38917357 DOI: 10.1021/acs.inorgchem.4c01242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Chemiresistive NH3/NO2 sensors are attracting considerable attention for use in air-conditioning systems. However, the existing sensors suffer from cross-sensitivity, detection limit, and power consumption, owing to the inadequate charge-transfer ability of gas-sensing materials. Herein, we develop a flexible NH3/NO2 sensor based on graphitic carbon nitride/polypyrrole decorated alginate paper (AP@g-CN/PPy). The flexible sensor can work at room temperature and exhibits a positive response of 23-246% and a negative response of 37-262% toward 0.1-5 ppm of NH3 and NO2, which is ∼4.5 times and ∼7.0 times higher than a pristine PPy sensor. Moreover, the sensor exhibits flexibility, reproducibility, long-term stability, anti-interference, and high resilience to humidity, indicating its promising potential in real applications. Using the 9 feature parameters extracted from the transient response, a matched deep learning model was developed to achieve qualitative recognition of different types of gases with distinguished decision boundaries. This work not only provides an alternative gas-sensing material for dual NH3/NO2 sensing but also establishes an intelligent strategy to identify hazardous gases under an interfering atmosphere.
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Affiliation(s)
- Junxuan Liang
- State Key Laboratory of Bio-Fibers and Eco-Textiles, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, PR China
| | - Zongsheng Zou
- State Key Laboratory of Bio-Fibers and Eco-Textiles, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, PR China
| | - Zhihui Zhao
- State Key Laboratory of Bio-Fibers and Eco-Textiles, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, PR China
| | - Bin Hui
- State Key Laboratory of Bio-Fibers and Eco-Textiles, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, PR China
| | - Weiliang Tian
- College of Chemistry and Chemical Engineering, Tarim University, Alar 843300, PR China
| | - Kewei Zhang
- State Key Laboratory of Bio-Fibers and Eco-Textiles, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, PR China
- College of Chemistry and Chemical Engineering, Tarim University, Alar 843300, PR China
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3
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Mirzaei A, Alizadeh M, Ansari HR, Moayedi M, Kordrostami Z, Safaeian H, Lee MH, Kim TU, Kim JY, Kim HW, Kim SS. Resistive gas sensors for the detection of NH 3gas based on 2D WS 2, WSe 2, MoS 2, and MoSe 2: a review. NANOTECHNOLOGY 2024; 35:332002. [PMID: 38744265 DOI: 10.1088/1361-6528/ad4b22] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 05/14/2024] [Indexed: 05/16/2024]
Abstract
Transition metal dichalcogenides (TMDs) with a two-dimensional (2D) structure and semiconducting features are highly favorable for the production of NH3gas sensors. Among the TMD family, WS2, WSe2, MoS2, and MoSe2exhibit high conductivity and a high surface area, along with high availability, reasons for which they are favored in gas-sensing studies. In this review, we have discussed the structure, synthesis, and NH3sensing characteristics of pristine, decorated, doped, and composite-based WS2, WSe2, MoS2, and MoSe2gas sensors. Both experimental and theoretical studies are considered. Furthermore, both room temperature and higher temperature gas sensors are discussed. We also emphasized the gas-sensing mechanism. Thus, this review provides a reference for researchers working in the field of 2D TMD gas sensors.
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Affiliation(s)
- Ali Mirzaei
- Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
| | - Morteza Alizadeh
- Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
| | - Hamid Reza Ansari
- Department of Electrical Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
| | - Mehdi Moayedi
- Department of Electrical Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
| | - Zoheir Kordrostami
- Department of Electrical Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
| | - Haniyeh Safaeian
- Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
| | - Myoung Hoon Lee
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Tae-Un Kim
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Jin-Young Kim
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
- The Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea
| | - Hyoun Woo Kim
- The Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Sang Sub Kim
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
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4
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Kuş E, Altındemir G, Bostan YK, Taşaltın C, Erol A, Wang Y, Sarcan F. A Dual-Channel MoS 2-Based Selective Gas Sensor for Volatile Organic Compounds. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:633. [PMID: 38607167 PMCID: PMC11013178 DOI: 10.3390/nano14070633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 03/28/2024] [Accepted: 04/02/2024] [Indexed: 04/13/2024]
Abstract
Significant progress has been made in two-dimensional material-based sensing devices over the past decade. Organic vapor sensors, particularly those using graphene and transition metal dichalcogenides as key components, have demonstrated excellent sensitivity. These sensors are highly active because all the atoms in the ultra-thin layers are exposed to volatile compounds. However, their selectivity needs improvement. We propose a novel gas-sensing device that addresses this challenge. It consists of two side-by-side sensors fabricated from the same active material, few-layer molybdenum disulfide (MoS₂), for detecting volatile organic compounds like alcohol, acetone, and toluene. To create a dual-channel sensor, we introduce a simple step into the conventional 2D material sensor fabrication process. This step involves treating one-half of the few-layer MoS₂ using ultraviolet-ozone (UV-O3) treatment. The responses of pristine few-layer MoS₂ sensors to 3000 ppm of ethanol, acetone, and toluene gases are 18%, 3.5%, and 49%, respectively. The UV-O3-treated few-layer MoS₂-based sensors show responses of 13.4%, 3.1%, and 6.7%, respectively. This dual-channel sensing device demonstrates a 7-fold improvement in selectivity for toluene gas against ethanol and acetone. Our work sheds light on understanding surface processes and interaction mechanisms at the interface between transition metal dichalcogenides and volatile organic compounds, leading to enhanced sensitivity and selectivity.
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Affiliation(s)
- Esra Kuş
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey; (E.K.); (Y.K.B.); (A.E.)
| | - Gülay Altındemir
- Materials Institute, TUBITAK Marmara Research Center, Gebze, Kocaeli 41470, Turkey; (G.A.); (C.T.)
| | - Yusuf Kerem Bostan
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey; (E.K.); (Y.K.B.); (A.E.)
| | - Cihat Taşaltın
- Materials Institute, TUBITAK Marmara Research Center, Gebze, Kocaeli 41470, Turkey; (G.A.); (C.T.)
| | - Ayse Erol
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey; (E.K.); (Y.K.B.); (A.E.)
| | - Yue Wang
- Department of Physics, School of Physics, Engineering and Technology, University of York, York YO10 5DD, UK
| | - Fahrettin Sarcan
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey; (E.K.); (Y.K.B.); (A.E.)
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5
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Bahri M, Yu D, Zhang CY, Chen Z, Yang C, Douadji L, Qin P. Unleashing the potential of tungsten disulfide: Current trends in biosensing and nanomedicine applications. Heliyon 2024; 10:e24427. [PMID: 38293340 PMCID: PMC10826743 DOI: 10.1016/j.heliyon.2024.e24427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 12/18/2023] [Accepted: 01/09/2024] [Indexed: 02/01/2024] Open
Abstract
The discovery of graphene ignites a great deal of interest in the research and advancement of two-dimensional (2D) layered materials. Within it, semiconducting transition metal dichalcogenides (TMDCs) are highly regarded due to their exceptional electrical and optoelectronic properties. Tungsten disulfide (WS2) is a TMDC with intriguing properties, such as biocompatibility, tunable bandgap, and outstanding photoelectric characteristics. These features make it a potential candidate for chemical sensing, biosensing, and tumor therapy. Despite the numerous reviews on the synthesis and application of TMDCs in the biomedical field, no comprehensive study still summarizes and unifies the research trends of WS2 from synthesis to biomedical applications. Therefore, this review aims to present a complete and thorough analysis of the current research trends in WS2 across several biomedical domains, including biosensing and nanomedicine, covering antibacterial applications, tissue engineering, drug delivery, and anticancer treatments. Finally, this review also discusses the potential opportunities and obstacles associated with WS2 to deliver a new outlook for advancing its progress in biomedical research.
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Affiliation(s)
- Mohamed Bahri
- Center of Precision Medicine and Healthcare, Tsinghua-Berkeley Shenzhen Institute, Shenzhen, Guangdong Province, 518055, China
- Institute of Biopharmaceutical and Health Engineering, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Dongmei Yu
- School of Mechanical, Electrical & Information Engineering, Shandong University, Weihai, Shandong 264209, China
| | - Can Yang Zhang
- Center of Precision Medicine and Healthcare, Tsinghua-Berkeley Shenzhen Institute, Shenzhen, Guangdong Province, 518055, China
- Institute of Biopharmaceutical and Health Engineering, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Zhenglin Chen
- Center of Precision Medicine and Healthcare, Tsinghua-Berkeley Shenzhen Institute, Shenzhen, Guangdong Province, 518055, China
- Institute of Biopharmaceutical and Health Engineering, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Chengming Yang
- University of Science and Technology Hospital, Shenzhen, Guangdong Province, China
| | - Lyes Douadji
- Chongqing Institute of Green and Intelligent Technology Chinese Academy of Sciences, Chongqing City, China
| | - Peiwu Qin
- Center of Precision Medicine and Healthcare, Tsinghua-Berkeley Shenzhen Institute, Shenzhen, Guangdong Province, 518055, China
- Institute of Biopharmaceutical and Health Engineering, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
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6
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Gan W, Jiang M, Liu Y, Ming L, Xiao R, Tang X, Liu Y, Long D, Zhao C, Li H. Van der Waals heterostructure gas sensors based on narrow-wide bandgap semiconductors for superior sensitivity. NANOTECHNOLOGY 2023; 35:05LT03. [PMID: 37879318 DOI: 10.1088/1361-6528/ad06d2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
Achieving high sensitivity in gas sensors is crucial for the precise detection of toxic agents. However, this can be challenging as it requires gas sensors to possess both a high response signal and low electrical noise simultaneously, which seems controversial as it necessitates adopting semiconductors with different bandgaps. Herein, we demonstrate the superior sensitivity of 2D molybdenum disulfide (MoS2)/tellurium (Te) van der Waals heterostructure (vdWH) gas sensors fabricated by combining narrow-bandgap (Te) and wide-bandgap (MoS2) semiconductors. The as-fabricated MoS2/Te vdWH gas sensors exhibit excellent sensitivity that is unavailable for sensors based on its individual counterparts. The response toward 50 ppm NH3is improved by two and six times compared to the individual MoS2and Te gas sensors, respectively. In addition, a high signal-to-noise ratio of ∼350 and an ultralow limit of detection of ∼2 ppb are achieved. These results outperform most previously reported gas sensors due to the efficient modulation of the barrier height of the MoS2/Te p-n junction as well as the synergistic effect benefiting from the low electric noise of the narrow-bandgap Te and high response signal of the wide-bandgap MoS2. Our work provides an insight into utilizing vdWHs based on narrow-wide bandgap semiconductors for developing highly sensitive gas sensors.
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Affiliation(s)
- Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Ming Jiang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Yucheng Liu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Li Ming
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Ruichun Xiao
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Xi Tang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Yu Liu
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, People's Republic of China
| | - Dunxu Long
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, People's Republic of China
| | - Changhui Zhao
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Hui Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
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7
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Shi N, Yan H, Wang X, Liu G, Wang J, Han Y, Duan Z, Zhao G. A flexible and wearable PET-based chemiresistive H 2S gas sensor modified with MoS 2-AgCl@AgNPs nanocomposite for the dynamic monitoring of egg spoilage. Anal Chim Acta 2023; 1279:341836. [PMID: 37827651 DOI: 10.1016/j.aca.2023.341836] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Revised: 09/16/2023] [Accepted: 09/19/2023] [Indexed: 10/14/2023]
Abstract
In this study, a flexible and wearable chemiresistive hydrogen sulfide (H2S) sensor is developed by modifying the MoS2-AgCl@AgNPs (MAAN) nanocomposite on a flexible PET-based Au interdigital electrode (FPAIDE) (MAAN/FPAIDE) to monitor egg spoilage at room temperature inexpensively. A new method is developed for the low-cost batch fabrication of MAAN/FPAIDEs by laser direct writing. The morphology and composition of the synthesized MAAN nanocomposite are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), and transmission electron microscopy (TEM). Based on the oxygen adsorption model, a new H2S sensing mechanism is discussed, which is related to the formation of p-n junctions between MoS2 and AgCl and the specific adsorption of H2S by AgNPs on the MAAN sensing layer, causing a decrease in resistance. X-ray photoelectron spectroscopy (XPS) is used to characterize the charge transfer between gas molecules and the MAAN sensing layer and sulfide generation during the response process. The concentration of H2S can be detected down to 27 ppb at 25 °C. Finally, the prepared sensor has been successfully utilized in the real-time monitoring of egg spoilage with satisfactory results, indicating its great potential for the application of fresh food quality and safety supervision and the smart packaging of poultry eggs.
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Affiliation(s)
- Ning Shi
- College of Artificial Intelligence, Nanjing Agricultural University, Nanjing, 210031, PR China
| | - Hanlong Yan
- College of Engineering, Nanjing Agricultural University, Nanjing, 210031, PR China
| | - Xiaochan Wang
- College of Engineering, Nanjing Agricultural University, Nanjing, 210031, PR China
| | - Gang Liu
- Key Lab of Modern Precision Agriculture System Integration Research, Ministry of Education of China, China Agricultural University, Beijing, 100083, PR China
| | - Jiaxuan Wang
- College of Engineering, Nanjing Agricultural University, Nanjing, 210031, PR China
| | - Yu Han
- College of Artificial Intelligence, Nanjing Agricultural University, Nanjing, 210031, PR China
| | - Zhibo Duan
- College of Artificial Intelligence, Nanjing Agricultural University, Nanjing, 210031, PR China
| | - Guo Zhao
- College of Artificial Intelligence, Nanjing Agricultural University, Nanjing, 210031, PR China.
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8
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Manzoor S, Talib M, Novikov SM, Arsenin AV, Volkov VS, Mishra P. Physisorption-Mediated Charge Transfer in TiS 2 Nanodiscs: A Room Temperature Sensor for Highly Sensitive and Reversible Carbon Dioxide Detection. ACS Sens 2023; 8:3435-3447. [PMID: 37698838 DOI: 10.1021/acssensors.3c00931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
Real-time and high-performance monitoring of trace carbon dioxide (CO2) has become a necessity due to its substantial impact on the global climate, human health, indoor occupancy, and crop productivity. Two-dimensional materials such as transition metal dichalcogenides (TMDs) have gained significant interest in gas sensing applications owing to their intrinsically high surface-to-volume ratio. However, the research has been limited to prominent TMDs such as WS2 and MoS2. Specifically, the chemiresistive sensing performance of titanium disulfide (TiS2) has rarely been investigated. We present an electric-field-assisted TiS2 nanodisc assembly for the fabrication of a low-cost, low-power CO2 gas sensor based on charge transfer between physisorbed CO2 analyte molecules and TiS2 nanodiscs operating at room temperature. The physiochemical properties of the synthesized TiS2 nanodiscs were investigated via scanning electron microscopy (SEM), electron diffraction spectroscopy (EDS), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectroscopy. The fabricated sensor demonstrated an ultra-high sensor response of 60%, a fast response time of 37 s toward 500 ppm CO2 gas, and the lowest detection limit of 5 ppm under ambient conditions. The low adsorption energies and vdW interaction between CO2 molecules and TiS2 resulted in easy desorption, allowing the sensor to self-recover without the need for external stimuli, which is hardly been witnessed in other 2D material analogues. Furthermore, the sensor has excellent reproducibility and stability for successive analyte exposures, as well as excellent selectivity for CO2 over other interfering gases. This reported sensor based on 2D TMDs is the first of its type to integrate such a broad range of sensor characteristics (such as high sensor response and sensitivity, rapid response and recovery times, a high signal-to-noise ratio, and excellent selectivity at room temperature) into a single, revolutionary device for CO2 detection.
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Affiliation(s)
- Samrah Manzoor
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), Jamia Nagar, New Delhi 110025, India
| | - Mohammad Talib
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), Jamia Nagar, New Delhi 110025, India
| | - Sergey M Novikov
- Moscow Center for Advanced Studies, Kulakova Street 20, Moscow 123592, Russia
| | - Aleksey V Arsenin
- Moscow Center for Advanced Studies, Kulakova Street 20, Moscow 123592, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia
| | - Valentyn S Volkov
- Moscow Center for Advanced Studies, Kulakova Street 20, Moscow 123592, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia
| | - Prabhash Mishra
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), Jamia Nagar, New Delhi 110025, India
- Quantum Materials and Devices Laboratory, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), Jamia Nagar, New Delhi 110025, India
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9
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Chiu CH, Chen YT, Shen JL. Quantum dots derived from two-dimensional transition metal dichalcogenides: synthesis, optical properties and optoelectronic applications. NANOTECHNOLOGY 2023; 34:482001. [PMID: 37607498 DOI: 10.1088/1361-6528/acf29c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Accepted: 08/21/2023] [Indexed: 08/24/2023]
Abstract
Zero-dimensional transition metal dichalcogenides (TMD) quantum dots (QDs) have attracted a lot of attention due to their interesting fundamental properties and various applications. Compared to TMD monolayers, the QD counterpart exhibits larger values for direct transition energies, exciton binding energies, absorption coefficient, luminescence efficiency, and specific surface area. These characteristics make them useful in optoelectronic devices. In this review, recent exciting progress on synthesis, optical properties, and applications of TMD QDs is highlighted. The first part of this article begins with a brief description of the synthesis approaches, which focus on microwave-assistant heating and pulsed laser ablation methods. The second part introduces the fundamental optical properties of TMD QDs, including quantum confinement in optical absorption, excitation-wavelength-dependent photoluminescence, and many-body effects. These properties are highlighted. In the third part, we discuss lastest advancements in optoelectronic devices based on TMD QDs These devices include light-emitting diodes, solar cells, photodetectors, optical sensors, and light-controlled memory devices. Finally, a brief summary and outlook will be provided.
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Affiliation(s)
- Ching-Hsueh Chiu
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
| | - Yu-Ting Chen
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
| | - Ji-Lin Shen
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
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10
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Zhang J, Zhang M, Wang S, Wu Z, Zhang Z. Moisture-Resistant and Highly Selective NH 3 Sensor Based on CdS/WS 2 Composite Heterojunction. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:10352-10366. [PMID: 37463135 DOI: 10.1021/acs.langmuir.3c00465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
This study reports the synthesis of CdS/WS2 composites via a green and ultra-low-cost hydrothermal method. By controlling the relative mass ratio between WS2 and CdS, an n-n type CdS/WS2 heterostructure, with excellent NH3 gas-sensitive properties, was developed and investigated at room temperature. Compared with pristine WS2 and CdS, the CdS/WS2-40%wt composite exhibited excellent selectivity of more than 4 orders of magnitude for sensing NH3, a very short recovery time of 3 s, and ultrahigh selectivity at room temperature. The large specific surface area of the CdS/WS2 composite increased the active sites for the gas-sensitive reaction. Additionally, the 2D morphology of CdS/WS2 and the heterojunction formed between WS2 and CdS contributed to the improved performance. Anti-humidity interference tests showed that the CdS/WS2 sample remained stable under real-time monitoring of NH3 at different ambient humidity values. This study paves the way for designing high-performance gas sensors operating at room temperature.
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Affiliation(s)
- Jinzhu Zhang
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
| | - Min Zhang
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
| | - Shuying Wang
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
| | - Zhaofeng Wu
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
| | - Ze Zhang
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
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11
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Wang L, Xu F, Zhang C, Wageh S, Al-Hartomy OA, Zhang B, Yang T, Zhang H. Chemiresistive gas sensor based on Mo 0.5W 0.5S 2 alloy nanoparticles with good selectivity and ppb-level limit of detection to ammonia. Mikrochim Acta 2023; 190:283. [PMID: 37415040 DOI: 10.1007/s00604-023-05843-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Accepted: 05/18/2023] [Indexed: 07/08/2023]
Abstract
Transition metal dichalcogenides (TMDs) are promising materials for chemiresistive gas sensor, while TMD alloys (two chalcogenide or/and metal elements) with tunable electronic structures have drawn little attention in gas sensing. Herein, Mo0.5W0.5S2 alloy nanoparticles (NPs) were prepared by a facile sonication exfoliation method and then tested for ammonia sensing. The crystal structure, geometric morphology, and elemental composition of Mo0.5W0.5S2 NPs were investigated. The gas sensing measurements demonstrated Mo0.5W0.5S2 NPs with good response to ammonia at 80 °C with a limit of detection down to 500 part per billion (ppb). The sensor also displayed good stability as well as superb selectivity to ammonia in the presence of interferences, such as methanol, acetone, benzene, and cyclohexane. The theoretical calculations revealed Mo and W atoms at edges (such as Mo0.5W0.5S2 (010)) of sheet-like NPs as the active sites for ammonia adsorption. Electrons donated by the adsorbed ammonia were combined with holes in p-type Mo0.5W0.5S2 NPs, and the concentration of the main charge carrier was reduced, resulting in resistance enhancement.
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Affiliation(s)
- Lude Wang
- School of Artificial Intelligence and Information Technology, Nanjing University of Chinese Medicine, No. 138 Xianling Rd, Nanjing, 210023, China
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Feicui Xu
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Chen Zhang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Omar A Al-Hartomy
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Bin Zhang
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China.
| | - Tingqiang Yang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Han Zhang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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12
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Zhang M, Zhang J. Highly Selective NH 3 Sensor Based on MoS 2/WS 2 Heterojunction. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1835. [PMID: 37368265 DOI: 10.3390/nano13121835] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Revised: 05/26/2023] [Accepted: 06/05/2023] [Indexed: 06/28/2023]
Abstract
In this paper, the heterostructure of MoS2/WS2 was prepared by a hydrothermal method; the n-n heterostructure was demonstrated using TEM combined with Mott-Schottky analysis. The valence and conduction band positions were further identified by the XPS valence band spectra. The NH3-sensing properties were assessed at room temperature by changing the mass ratio of the MoS2 and WS2 components. The 50 wt%-MoS2/WS2 sample exhibited the best performance, with a peak response of 23643% to NH3 at a concentration of 500 ppm, a minimum detection limit of 20 ppm, and a fast recovery time of 2.6 s. Furthermore, the composites-based sensors demonstrated an excellent humidity immune property with less than one order of magnitude in the humidity range of 11-95% RH, revealing the practical application value of these sensors. These results suggest that the MoS2/WS2 heterojunction is an intriguing candidate for fabricating NH3 sensors.
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Affiliation(s)
- Min Zhang
- Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, China
- School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China
| | - Jinzhu Zhang
- Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, China
- School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China
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13
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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14
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Abstract
Our demand for ubiquitous and reliable gas detection is spurring the design of intelligent and enabling gas sensors for the next-generation Internet of Things and Artificial Intelligence. The desire to introduce gas sensors everywhere is fueled by opportunities to create room-temperature semiconductor gas sensors with ultralow power consumption. In this Perspective, we provide an overview of the recent achievement of room-temperature gas sensors that have been translated from the advances in the design of the chemical and physical properties of low-dimensional semiconductor nanomaterials. The emergence of solution-processable nanomaterials opens up remarkable opportunities to integrate into high-performance and flexible room-temperature gas sensors by using low-temperature, large-area, solution-based methods instead of costly, high-vacuum, high-temperature device manufacturing processes. We review the fundamental factors which affect the receptor and transducer functions of semiconductor gas sensors. We also discuss challenges that must be addressed in the move to the continuous miniaturization and evolution of semiconductor gas sensors.
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Affiliation(s)
- Yanting Tang
- School of Optical and Electronic Information, School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, China
| | - Yunong Zhao
- School of Optical and Electronic Information, School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, China
| | - Huan Liu
- School of Optical and Electronic Information, School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, China
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15
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Parangusan H, Bhadra J, Al-Qudah RA, Elhadrami EC, Al-Thani NJ. Comparative Study on Gas-Sensing Properties of 2D (MoS 2, WS 2)/PANI Nanocomposites-Based Sensor. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4423. [PMID: 36558277 PMCID: PMC9783066 DOI: 10.3390/nano12244423] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Accepted: 12/02/2022] [Indexed: 06/17/2023]
Abstract
NH3 is a highly harmful gas; when inhaled at levels that are too high for comfort, it is very dangerous to human health. One of the challenging tasks in research is developing ammonia sensors that operate at room temperature. In this study, we proposed a new design of an NH3 gas sensor that was comprised of two-dimensional (TMDs, mainly WS2 and MoS2) and PANI. The 2D-TMDs metal was successfully incorporated into the PANI lattice based on the results of XRD and SEM. The elemental EDX analysis results indicated that C, N, O, W, S and Mo were found in the composite samples. The bandgap of the materials decreased due to the addition of MoS2 and WS2. We also analyzed its structural, optical and morphological properties. When compared to MoS2 and PANI, the proposed NH3 sensor with the WS2 composite was found to have high sensitivity. The composite films also exhibited response and recovery times of 10/16 and 14/16 s. Therefore, the composite PANI/2D-TMDs is a suitable material for NH3 gas detection applications.
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Affiliation(s)
- Hemalatha Parangusan
- Qatar University Young Scientists Center (QUYSC), Qatar University, Doha P.O. Box 2713, Qatar
| | - Jolly Bhadra
- Qatar University Young Scientists Center (QUYSC), Qatar University, Doha P.O. Box 2713, Qatar
| | | | | | - Noora Jabor Al-Thani
- Qatar University Young Scientists Center (QUYSC), Qatar University, Doha P.O. Box 2713, Qatar
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16
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Zhao F, Li Z, Fu Y, Wang Q. Gas-Sensitive Characteristics of Graphene Composite Tungsten Disulfide to Ammonia. SENSORS (BASEL, SWITZERLAND) 2022; 22:8672. [PMID: 36433267 PMCID: PMC9696837 DOI: 10.3390/s22228672] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/06/2022] [Revised: 10/29/2022] [Accepted: 11/06/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional materials have outstanding application prospects in gas sensing. By constructing composite structures of various gas-sensitive materials, more-efficient and sensitive gas sensors can be further developed. After graphene is compounded with WS2, the composite material can improve the gas detection performance. In this work, the adsorption energy and the electronic properties of a graphene/WS2 structure were calculated by first-principles before and after adsorption of NH3. The calculation results indicate that the bandgap of the material was appreciably reduced after NH3 was adsorbed. In addition, a graphene/WS2 gas sensor was prepared. The response of the sensor to NH3 at a concentration of 100 ppm was 2.42% and 1.73% at 30 °C and 60 °C, respectively. Combining simulation with experiment, it is feasible to use graphene composite WS2 to detect NH3, which provides a new idea for applications of graphene and other composite materials in gas sensing.
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Affiliation(s)
- Fei Zhao
- Institute of Electrical and Information Engineering, Zhenjiang College, Zhenjiang 212100, China
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Zhongxue Li
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Yongzhong Fu
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Quan Wang
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China
- State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050, China
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17
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Filipovic L, Selberherr S. Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12203651. [PMID: 36296844 PMCID: PMC9611560 DOI: 10.3390/nano12203651] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Revised: 09/29/2022] [Accepted: 10/07/2022] [Indexed: 06/01/2023]
Abstract
During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.
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18
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Gupta D, Chauhan V, Kumar R. Sputter deposition of 2D MoS2 thin films -A critical review from a surface and structural perspective. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.109848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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19
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Jelken J, Avilés MO, Lagugné-Labarthet F. The Hidden Flower in WS 2 Flakes: A Combined Nanomechanical and Tip-Enhanced Raman Exploration. ACS NANO 2022; 16:12352-12363. [PMID: 35876460 DOI: 10.1021/acsnano.2c03441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report on tungsten disulfide (WS2) flakes grown by chemical vapor deposition (CVD), which exhibit a flower-like surface structure above the primary few-layer flake with a triangular shape. The fine structure is only revealed in the mechanical, chemical, and electronic properties of the flake but not in the topography. The origin of this structure is the peculiar one-step growth during the CVD process that permits to control the sulfur concentration at any time. A high concentration of S at the onset of the deposition process leads to a rapid growth of the flake, resulting in tungsten vacancies. Reducing the sulfur concentration toward the end of the growth slows down the reaction and leads to sulfur vacancies. These microscale domains were studied by confocal- and tip-enhanced Raman spectroscopy revealing their chemical composition with high spatial resolution. A strong quenching of the photoluminescence in the tungsten-vacancy domains is observed. Atomic force microscope measurements, performed in intermittent contact mode, force modulation mode (including lateral force mode), and PeakForce quantitative nanomechanics mode, show that the mechanical properties of these domains differ. Within the tungsten-vacancy domains, the adhesion force is reduced, while the friction force increased. Kelvin probe force microscopy measurements show that the electronic properties of the flakes are modulated by these domains. The combined nanomechanical and nanospectroscopy measurements provide detailed insights on the inhomogeneous surface properties of the single WS2 flake, further highlighting how its multidomain properties can be finely tuned using CVD.
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Affiliation(s)
- Joachim Jelken
- The Centre for Advanced Materials and Biomaterials Research (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), 1151 Richmond Street, London, Ontario N6A 5B7, Canada
| | - María O Avilés
- The Centre for Advanced Materials and Biomaterials Research (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), 1151 Richmond Street, London, Ontario N6A 5B7, Canada
| | - François Lagugné-Labarthet
- The Centre for Advanced Materials and Biomaterials Research (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), 1151 Richmond Street, London, Ontario N6A 5B7, Canada
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20
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Järvinen T, Hosseini Shokouh SH, Sainio S, Pitkänen O, Kordas K. Ultrafast photoresponse of vertically oriented TMD films probed in a vertical electrode configuration on Si chips. NANOSCALE ADVANCES 2022; 4:3243-3249. [PMID: 36132819 PMCID: PMC9417830 DOI: 10.1039/d2na00313a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Accepted: 06/29/2022] [Indexed: 06/16/2023]
Abstract
Integrated photodetectors based on transition metal dichalcogenides (TMDs) face the challenge of growing their high-quality crystals directly on chips or transferring them to the desired locations of components by applying multi-step processes. Herein, we show that vertically oriented polycrystalline thin films of MoS2 and WS2 grown by sulfurization of Mo and W sputtered on highly doped Si are robust solutions to achieve on-chip photodetectors with a sensitivity of up to 1 mA W-1 and an ultrafast response time in the sub-μs regime by simply probing the device in a vertical arrangement, i.e., parallel to the basal planes of TMDs. These results are two orders of magnitude better than those measured earlier in lateral probing setups having both electrodes on top of vertically aligned polycrystalline TMD films. Accordingly, our study suggests that easy-to-grow vertically oriented polycrystalline thin film structures may be viable components in fast photodetectors as well as in imaging, sensing and telecommunication devices.
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Affiliation(s)
- Topias Järvinen
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu FI-90014 Oulu Finland
| | - Seyed-Hossein Hosseini Shokouh
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu FI-90014 Oulu Finland
| | - Sami Sainio
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu FI-90014 Oulu Finland
- SLAC National Accelerator Laboratory, Stanford University Stanford CA 94025 USA
| | - Olli Pitkänen
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu FI-90014 Oulu Finland
| | - Krisztian Kordas
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu FI-90014 Oulu Finland
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21
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Szary MJ, Florjan DM, Bąbelek JA. Selective Detection of Carbon Monoxide on P-Block Doped Monolayers of MoTe 2. ACS Sens 2022; 7:272-285. [PMID: 35044171 PMCID: PMC8805155 DOI: 10.1021/acssensors.1c02246] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Accepted: 01/04/2022] [Indexed: 12/29/2022]
Abstract
CO and CO2 are among the most commonly monitored gases. However, the currently available semiconductor sensors require heating to ∼400 °C in order to operate effectively. This increases the power demand and shortens their lifespan. Consequently, new material prospects are being investigated. The adoption of novel two-dimensional layered materials is one of the pursued solutions. MoS2 and MoTe2 sheets have already been shown sensitive to NO2 and NH3 even at room temperature. However, their response to other compounds is limited. Hence, this work investigates, by employing density functional theory (DFT) calculations, the doping of Al, Si, P, S, and Cl atoms into the Te vacancy of MoTe2, and its impact on the sensing characteristics for CO and CO2. The computations predict that P doping significantly enhances the molecule-sheet charge transfer (up to +436%) while having only a little effect on the adsorption energy (molecular dynamics show that the molecule can effectively diffuse at 300 K). On the other hand, the doping has a limited impact on the adsorption of CO2. The relative (CO/CO2) response of P-doped MoTe2 is 5.6 compared to the 1.5 predicted for the pristine sheet. Thus, the doping should allow for more selective detection of CO in CO/CO2 mixtures.
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Affiliation(s)
- Maciej J. Szary
- Institute of Physics, Poznan University of Technology, ul. Piotrowo 3, 61-138 Poznan, Poland
| | - Dominik M. Florjan
- Institute of Physics, Poznan University of Technology, ul. Piotrowo 3, 61-138 Poznan, Poland
| | - Jakub A. Bąbelek
- Institute of Physics, Poznan University of Technology, ul. Piotrowo 3, 61-138 Poznan, Poland
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22
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Nahirniak S, Saruhan B. MXene Heterostructures as Perspective Materials for Gas Sensing Applications. SENSORS (BASEL, SWITZERLAND) 2022; 22:972. [PMID: 35161718 PMCID: PMC8838671 DOI: 10.3390/s22030972] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 01/19/2022] [Accepted: 01/25/2022] [Indexed: 12/14/2022]
Abstract
This paper provides a summary of the recent developments with promising 2D MXene-related materials and gives an outlook for further research on gas sensor applications. The current synthesis routes that are provided in the literature are summarized, and the main properties of MXene compounds have been highlighted. Particular attention has been paid to safe and non-hazardous synthesis approaches for MXene production as 2D materials. The work so far on sensing properties of pure MXenes and MXene-based heterostructures has been considered. Significant improvement of the MXenes sensing performances not only relies on 2D production but also on the formation of MXene heterostructures with other 2D materials, such as graphene, and with metal oxides layers. Despite the limited number of research papers published in this area, recommendations on new strategies to advance MXene heterostructures and composites for gas sensing applications can be driven.
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Affiliation(s)
- Svitlana Nahirniak
- German Aerospace Center, Department of High-Temperature and Functional Coatings, Institute of Materials Research, Linder Hoehe, 51147 Cologne, Germany;
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23
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Zhou J, Bagheri M, Järvinen T, Pravda Bartus C, Kukovecz A, Komsa HP, Kordas K. C 60Br 24/SWCNT: A Highly Sensitive Medium to Detect H 2S via Inhomogeneous Carrier Doping. ACS APPLIED MATERIALS & INTERFACES 2021; 13:59067-59075. [PMID: 34870971 PMCID: PMC8678982 DOI: 10.1021/acsami.1c16807] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Accepted: 11/26/2021] [Indexed: 06/01/2023]
Abstract
H2S is a toxic and corrosive gas, whose accurate detection at sub-ppm concentrations is of high practical importance in environmental, industrial, and health safety applications. Herein, we propose a chemiresistive sensor device that applies a composite of single-walled carbon nanotubes (SWCNTs) and brominated fullerene (C60Br24) as a sensing component, which is capable of detecting 50 ppb H2S even at room temperature with an excellent response of 1.75% in a selective manner. In contrast, a poor gas response of pristine C60-based composites was found in control measurements. The experimental results are complemented by density functional theory calculations showing that C60Br24 in contact with SWCNTs induces localized hole doping in the nanotubes, which is increased further when H2S adsorbs on C60Br24 but decreases in the regions, where direct adsorption of H2S on the nanotubes takes place due to electron doping from the analyte. Accordingly, the heterogeneous chemical environment in the composite results in spatial fluctuations of hole density upon gas adsorption, hence influencing carrier transport and thus giving rise to chemiresistive sensing.
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Affiliation(s)
- Jin Zhou
- Country
Microelectronics Research Unit, Faculty of Information Technology
and Electrical Engineering, University of
Oulu, P.O. Box 4500, FIN-90014 Oulu, Finland
| | - Mohammad Bagheri
- Country
Microelectronics Research Unit, Faculty of Information Technology
and Electrical Engineering, University of
Oulu, P.O. Box 4500, FIN-90014 Oulu, Finland
| | - Topias Järvinen
- Country
Microelectronics Research Unit, Faculty of Information Technology
and Electrical Engineering, University of
Oulu, P.O. Box 4500, FIN-90014 Oulu, Finland
| | - Cora Pravda Bartus
- Interdisciplinary
Excellence Centre, Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Bélatér 1, H-6720 Szeged, Hungary
| | - Akos Kukovecz
- Interdisciplinary
Excellence Centre, Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Bélatér 1, H-6720 Szeged, Hungary
| | - Hannu-Pekka Komsa
- Country
Microelectronics Research Unit, Faculty of Information Technology
and Electrical Engineering, University of
Oulu, P.O. Box 4500, FIN-90014 Oulu, Finland
| | - Krisztian Kordas
- Country
Microelectronics Research Unit, Faculty of Information Technology
and Electrical Engineering, University of
Oulu, P.O. Box 4500, FIN-90014 Oulu, Finland
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24
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Chamlagain B, Khondaker SI. Rapid Degradation of the Electrical Properties of 2D MoS 2 Thin Films under Long-Term Ambient Exposure. ACS OMEGA 2021; 6:24075-24081. [PMID: 34568686 PMCID: PMC8459407 DOI: 10.1021/acsomega.1c03522] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Indexed: 06/08/2023]
Abstract
The MoS2 thin film has attracted a lot of attention due to its potential applications in flexible electronics, sensors, catalysis, and heterostructures. Understanding the effect of long-term ambient exposure on the electrical properties of the thin film is important for achieving many overreaching goals of this material. Here, we report for the first time a systematic study of electrical property variation and stability of MoS2 thin films under ambient exposure of up to a year. The MoS2 thin films were grown via the sulfurization of 6 nm thick molybdenum films. We found that the resistance of the samples increases by 114% just in 4 weeks and 430% in 4 months and they become fully insulated in a year of ambient exposure. The dual-sweep current-voltage (I-V) characteristic shows hysteretic behavior for a 4-month-old sample which further exhibits pronounced nonlinear I-V curves and hysteretic behavior after 8 months. The X-ray photoelectron spectroscopy measurements show that the MoS2 thin film gradually oxidizes and 13.1% of MoO3 and 11.8% oxide of sulfur were formed in 4 months, which further increased to 23.1 and 12.7% in a year, respectively. The oxide of the sulfur peak was not reported in any previous stability studies of exfoliated and chemical vapor deposition-grown MoS2, suggesting that the origin of this peak is related to the distinct crystallinity of the MoS2 thin film due to its smaller grain sizes, abundant grain boundaries, and exposed edges. Raman studies show the broadening of E2g 1 and A1g peaks with increasing exposure time, suggesting an increase in the disorder in MoS2. It is also found that coating the MoS2 thin film with polymethylmethacrylate can effectively prevent the electrical property degradation, showing only a 6% increase in resistance in 4 months and 40% over a year of ambient exposure.
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Affiliation(s)
- Bhim Chamlagain
- NanoScience
Technology Center and Department of Physics, University of Central Florida, Orlando, Florida 32826, United States
| | - Saiful I. Khondaker
- NanoScience
Technology Center and Department of Physics, University of Central Florida, Orlando, Florida 32826, United States
- School
of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32826, United States
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25
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Hierarchical Nanoflowers of Colloidal WS2 and Their Potential Gas Sensing Properties for Room Temperature Detection of Ammonia. Processes (Basel) 2021. [DOI: 10.3390/pr9091491] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022] Open
Abstract
A one-step colloidal synthesis of hierarchical nanoflowers of WS2 is reported. The nanoflowers were used to fabricate a chemical sensor for the detection of ammonia vapors at room temperature. The gas sensing performance of the WS2 nanoflowers was measured using an in-house custom-made gas chamber. SEM analysis revealed that the nanoflowers were made up of petals and that the nanoflowers self-assembled to form hierarchical structures. Meanwhile, TEM showed the exposed edges of the petals that make up the nanoflower. A band gap of 1.98 eV confirmed a transition from indirect-to-direct band gap as well as a reduction in the number of layers of the WS2 nanoflowers. The formation of WS2 was confirmed by XPS and XRD with traces of the oxide phase, WO3. XPS analysis also confirmed the successful capping of the nanoflowers. The WS2 nanoflowers exhibited a good response and selectivity for ammonia.
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26
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Dhara S, Jawa H, Ghosh S, Varghese A, Karmakar D, Lodha S. All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe 2/MoS 2 pn Heterodiode. ACS APPLIED MATERIALS & INTERFACES 2021; 13:30785-30796. [PMID: 34180230 DOI: 10.1021/acsami.1c01806] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional MoS2 gas sensors have conventionally relied on a change in field-effect-transistor (FET) channel resistance or in the Schottky contact/pn homojunction barrier. We demonstrate an enhancement in sensitivity (6×) and dynamic response along with a reduction in detection limit (8×) and power (104×) in a gate-tunable type-II WSe2(p)/MoS2(n) heterodiode gas sensor over an MoS2 FET on the same flake. Measurements for varying NO2 concentration, gate bias, and MoS2 flake thickness, reinforced with first-principles calculations, indicate dual-mode operation due to (i) a series resistance-based exponential change in the high-bias thermionic current (high sensitivity), and (ii) a heterointerface carrier concentration-based linear change in near-zero-bias interlayer recombination current (low power) resulting in sub-100 μW/cm2 power consumption. Fast and gate-bias tunable recovery enables an all-electrical, room-temperature dynamic operation. Coupled with the sensing of trinitrotoluene (TNT) molecules down to 80 ppb, this study highlights the potential of the WSe2/MoS2 pn heterojunction as a simple, low-overhead, and versatile chemical-sensing platform.
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Affiliation(s)
- Sushovan Dhara
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Himani Jawa
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Sayantan Ghosh
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Abin Varghese
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India
| | | | - Saurabh Lodha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
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Mouloua D, Kotbi A, Deokar G, Kaja K, El Marssi M, EL Khakani MA, Jouiad M. Recent Progress in the Synthesis of MoS 2 Thin Films for Sensing, Photovoltaic and Plasmonic Applications: A Review. MATERIALS (BASEL, SWITZERLAND) 2021; 14:3283. [PMID: 34198592 PMCID: PMC8231843 DOI: 10.3390/ma14123283] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2021] [Revised: 06/08/2021] [Accepted: 06/10/2021] [Indexed: 11/16/2022]
Abstract
In the surge of recent successes of 2D materials following the rise of graphene, molybdenum disulfide (2D-MoS2) has been attracting growing attention from both fundamental and applications viewpoints, owing to the combination of its unique nanoscale properties. For instance, the bandgap of 2D-MoS2, which changes from direct (in the bulk form) to indirect for ultrathin films (few layers), offers new prospects for various applications in optoelectronics. In this review, we present the latest scientific advances in the field of synthesis and characterization of 2D-MoS2 films while highlighting some of their applications in energy harvesting, gas sensing, and plasmonic devices. A survey of the physical and chemical processing routes of 2D-MoS2 is presented first, followed by a detailed description and listing of the most relevant characterization techniques used to study the MoS2 nanomaterial as well as theoretical simulations of its interesting optical properties. Finally, the challenges related to the synthesis of high quality and fairly controllable MoS2 thin films are discussed along with their integration into novel functional devices.
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Affiliation(s)
- Driss Mouloua
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
- Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Blvd, Lionel–Boulet, Varennes, QC J3X-1S2, Canada
| | - Ahmed Kotbi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
| | - Geetanjali Deokar
- Physical Science and Engineering Division, Kaust University, Thuwal 23955-6900, Saudi Arabia;
| | - Khaled Kaja
- Laboratoire National de métrologie et d’essais (LNE), 29 av. Roger Hannequin, 78197 Trappes, France;
| | - Mimoun El Marssi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
| | - My Ali EL Khakani
- Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Blvd, Lionel–Boulet, Varennes, QC J3X-1S2, Canada
| | - Mustapha Jouiad
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
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28
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Guo X, Ding Y, Kuang D, Wu Z, Sun X, Du B, Liang C, Wu Y, Qu W, Xiong L, He Y. Enhanced ammonia sensing performance based on MXene-Ti 3C 2T x multilayer nanoflakes functionalized by tungsten trioxide nanoparticles. J Colloid Interface Sci 2021; 595:6-14. [PMID: 33813226 DOI: 10.1016/j.jcis.2021.03.115] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Revised: 03/19/2021] [Accepted: 03/21/2021] [Indexed: 10/21/2022]
Abstract
Low-power consumption and high sensitivity are highly desirable for a vast range of NH3 sensing applications. As a new type of two-dimension (2D) material, Ti3C2Tx is extensively studied for room temperature NH3 sensors recently. However, the Ti3C2Tx MXene based gas sensors suffer mainly from low sensitivity. Herein, we report a sensitive Ti3C2Tx/WO3 composite resistive sensor for NH3 detection. The Ti3C2Tx/WO3 composite consisting of WO3 nanoparticles anchored on Ti3C2Tx nanoflakes were synthesized successfully with a facile ultra-sonication technique. The composite sensor with optimized components exhibits a high sensitivity of 22.3% for 1 ppm NH3 at room temperature, which is 15.4 times higher than the pure Ti3C2Tx sensor. Furthermore, the composite sensor has excellent reproducibility, good long-term stability, and high selectivity to NH3. The relative humidity influence on NH3 gas sensing properties of the sensors was systematically studied. This research provides an efficient route for the preparation of novel MXene-based sensitive materials for high-performance NH3 sensors.
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Affiliation(s)
- Xuezheng Guo
- State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China; Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Yanqiao Ding
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Delin Kuang
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Zhilin Wu
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Xia Sun
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Bingsheng Du
- State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China; Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Chengyao Liang
- State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China; Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Yingjie Wu
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Weijie Qu
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Lian Xiong
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Yong He
- State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China; Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
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29
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Zhou J, Järvinen T, Pitkänen O, Kónya Z, Kukovecz A, Kordas K. Composites of ion-in-conjugation polysquaraine and SWCNTs for the detection of H 2S and NH 3 at ppb concentrations. NANOTECHNOLOGY 2021; 32:185502. [PMID: 33624613 DOI: 10.1088/1361-6528/abdf06] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Several different methods are established for the analysis of gases, including optical spectroscopy, photoacoustic spectroscopy as well as colorimetric and resistive sensing, the measurements systems are either too complex or have limited sensitivity. In particular, when the goal is to apply a large number of sensors in networks, it is highly desirable to have devices that are simple, have low cost and energy consumption, yet sensitive and selective to monitor analytes even in traces. Herein, we propose a new type of resistive sensor device based on a composite of single-wall carbon nanotubes and an ion-in-conjugation polymer, poly(1,5-diaminonaphthalene-squaraine), capable of detecting H2S and NH3 in air even at room temperature with a theoretical concentration limit of ∼1 ppb and ∼7 ppb, respectively. Density functional theory calculations revealed that H atoms of the analytes and O atoms of the polymer chain interact and form hydrogen bonds, and the electron withdrawal from the gas molecules by the polymer chain results in the change of its electrical conductivity. To demonstrate the feasibility of the new nanocomposites in sensing, we show the devices for monitoring food safety with good sensor stability of operation for at least 3 months of period of time.
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Affiliation(s)
- Jin Zhou
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, PO Box 4500, FI-90014 Oulu, Finland
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30
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Moumen A, Konar R, Zappa D, Teblum E, Perelshtein I, Lavi R, Ruthstein S, Nessim GD, Comini E. Robust Room-Temperature NO 2 Sensors from Exfoliated 2D Few-Layered CVD-Grown Bulk Tungsten Di-selenide (2H-WSe 2). ACS APPLIED MATERIALS & INTERFACES 2021; 13:4316-4329. [PMID: 33438989 PMCID: PMC7880530 DOI: 10.1021/acsami.0c17924] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2020] [Accepted: 12/29/2020] [Indexed: 05/09/2023]
Abstract
We report a facile and robust room-temperature NO2 sensor fabricated using bi- and multi-layered 2H variant of tungsten di-selenide (2H-WSe2) nanosheets, exhibiting high sensing characteristics. A simple liquid-assisted exfoliation of 2H-WSe2, prepared using ambient pressure chemical vapor deposition, allows smooth integration of these nanosheets on transducers. Three sensor batches are fabricated by modulating the total number of layers (L) obtained from the total number of droplets from a homogeneous 2H-WSe2 dispersion, such as ∼2L, ∼5-6L, and ∼13-17L, respectively. The gas-sensing attributes of 2H-WSe2 nanosheets are investigated thoroughly. Room temperature (RT) experiments show that these devices are specifically tailored for NO2 detection. 2L WSe2 nanosheets deliver the best rapid response compared to ∼5-6L or ∼13-17L. The response of 2L WSe2 at RT is 250, 328, and 361% to 2, 4, and 6 ppm NO2, respectively. The sensor showed nearly the same response toward low NO2 concentration even after 9 months of testing, confirming its remarkable long-term stability. A selectivity study, performed at three working temperatures (RT, 100, and 150 °C), shows high selectivity at 150 and 100 °C. Full selectivity toward NO2 at RT confirms that 2H-WSe2 nanosheet-based sensors are ideal candidates for NO2 gas detection.
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Affiliation(s)
- Abderrahim Moumen
- SENSOR
Laboratory, Department of Information Engineering (DII), University of Brescia, Via D. Valotti 9, 25133 Brescia, Italy
| | - Rajashree Konar
- Chemistry,
Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat Gan, Israel
| | - Dario Zappa
- SENSOR
Laboratory, Department of Information Engineering (DII), University of Brescia, Via D. Valotti 9, 25133 Brescia, Italy
| | - Eti Teblum
- Chemistry,
Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat Gan, Israel
| | - Ilana Perelshtein
- Chemistry,
Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat Gan, Israel
| | - Ronit Lavi
- Chemistry,
Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat Gan, Israel
| | - Sharon Ruthstein
- Chemistry,
Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat Gan, Israel
| | - Gilbert Daniel Nessim
- Chemistry,
Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat Gan, Israel
| | - Elisabetta Comini
- SENSOR
Laboratory, Department of Information Engineering (DII), University of Brescia, Via D. Valotti 9, 25133 Brescia, Italy
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31
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Ghaderahmadi S, Kamkar M, Tasnim N, Arjmand M, Hoorfar M. A review of low-temperature H2S gas sensors: fabrication and mechanism. NEW J CHEM 2021. [DOI: 10.1039/d1nj02468j] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Reduced detection temperature of hazardous gases such as H2S can lower power consumption and increase the long-term stability. The decreased operating temperature can be achieved via physical and chemical modification of the sensing layer.
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Affiliation(s)
- Sara Ghaderahmadi
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada
| | - Milad Kamkar
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada
| | - Nishat Tasnim
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada
| | - Mohammad Arjmand
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada
| | - Mina Hoorfar
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada
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32
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Scalable lateral heterojunction by chemical doping of 2D TMD thin films. Sci Rep 2020; 10:12970. [PMID: 32737425 PMCID: PMC7395794 DOI: 10.1038/s41598-020-70127-6] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Accepted: 07/20/2020] [Indexed: 01/05/2023] Open
Abstract
Scalable heterojunctions based on two-dimensional transitional metal dichalcogenides are of great importance for their applications in the next generation of electronic and optoelectronic devices. However, reliable techniques for the fabrication of such heterojunctions are still at its infancy. Here we demonstrate a simple technique for the scalable fabrication of lateral heterojunctions via selective chemical doping of TMD thin films. We demonstrate that the resistance of large area MoS2 and MoSe2 thin film, prepared via low pressure chalcogenation of molybdenum film, decreases by up to two orders of magnitude upon doping using benzyl viologen (BV) molecule. X-ray photoelectron spectroscopy (XPS) measurements confirms n-doping of the films by BV molecules. Since thin films of MoS2 and MoSe2 are typically more resistive than their exfoliated and co-evaporation based CVD counterparts, the decrease in resistance by BV doping represents a significant step in the utilization of these samples in electronic devices. Using selective BV doping, we simultaneously fabricated many lateral heterojunctions in 1 cm2 MoS2 and 1 cm2 MoSe2 films. The electrical transport measurements performed across the heterojunctions exhibit current rectification behavior due to a band offset created between the doped and undoped regions of the material. Almost 84% of the fabricated devices showed rectification behavior demonstrating the scalability of this technique.
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33
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Affiliation(s)
- Thi Kieu Ngan Pham
- Department of Mechanical Engineering University of Hawai‘i at Mānoa 2540 Dole Street Honolulu Hawaii 96822 USA
| | - Joseph J. Brown
- Department of Mechanical Engineering University of Hawai‘i at Mānoa 2540 Dole Street Honolulu Hawaii 96822 USA
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34
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Diversiform metal oxide-based hybrid nanostructures for gas sensing with versatile prospects. Coord Chem Rev 2020. [DOI: 10.1016/j.ccr.2020.213272] [Citation(s) in RCA: 97] [Impact Index Per Article: 24.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
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35
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Jha RK, Nanda A, Bhat N. Boron nanostructures obtained via ultrasonic irradiation for high performance chemiresistive methane sensors. NANOSCALE ADVANCES 2020; 2:1837-1842. [PMID: 36132512 PMCID: PMC9417492 DOI: 10.1039/c9na00749k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2019] [Accepted: 03/09/2020] [Indexed: 05/05/2023]
Abstract
We report on a chemiresistive gas sensor using boron nanostructures as the sensing layer, to detect methane gas down to 50 ppm. The sensor showed an excellent response of 43.5-153.1% for a methane concentration of 50 ppm to 105 ppm, with linear behaviour and good response and recovery time. The stability, repeatability, reproducibility, and shelf life of the sensor are promising for next generation methane gas detection.
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Affiliation(s)
- Ravindra Kumar Jha
- Nano-Devices and Sensors Laboratory, Centre for Nano Science and Engineering, Indian Institute of Science Bangalore India-560012
| | - Aman Nanda
- Nano-Devices and Sensors Laboratory, Centre for Nano Science and Engineering, Indian Institute of Science Bangalore India-560012
| | - Navakanta Bhat
- Nano-Devices and Sensors Laboratory, Centre for Nano Science and Engineering, Indian Institute of Science Bangalore India-560012
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36
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Sarmah HJ, Mohanta D, Saha A. Perceptible exciton-to-trion conversion and signature of defect mediated vibronic modes and spin relaxation in nanoscale WS 2 exposed to γ-rays. NANOTECHNOLOGY 2020; 31:285706. [PMID: 32126535 DOI: 10.1088/1361-6528/ab7c4a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this work, we report manifested optical, optoelectronic and spin-spin relaxation features of a few layered tungsten disulphide (WS2) nanosheets subjected to energetic γ-photons (∼1.3 MeV) emitted from a Co60 source. Upon intense irradiation (dose = 96 kGy), a slight departure from the pure hexagonal phase was realized with the introduction of the trigonal phase at large. Moreover, in the Raman spectra, as a consequence of the radiation-induced effect, an apparent improvement of the E-to-A mode intensity and a reduction in phonon lifetimes have been realized, with the latter being dependent on the linewidths. The emergence of the new peak (D) maxima observable at ∼406 cm-1 in the Raman spectra and ∼680 nm in the photoluminescence (PL) spectra can be attributed to the introduction of defect centres owing to realization of sulphur vacancies (V S) in the irradiated nanoscale WS2. Additionally, neutral exciton to charged exciton (trion) conversion is anticipated in the overall PL characteristics. The PL decay dynamics, while following bi-exponential trends, have revealed ample improvement in both the fast parameter (0.39 ± 0.01 ns to 1.88 ± 0.03 ns) and the slow parameter (2.36 ± 0.03 ns to 12.1 ± 0.4 ns) after γ-impact. We attribute this to the finite band gap expansion and the incorporation of new localized states within the gap, respectively. A declining exciton annihilation rate is also witnessed. The isotropic nature of the electron paramagnetic resonance spectra as a consequence of γ-exposure would essentially characterize a uniform distribution of the paramagnetic species in the system, while predicting a three-fold improvement of relative spin density at 96 kGy. Exploring defect dynamics and spin dynamics in 2D nanoscale systems does not only strengthen fundamental insight but can also offer ample scope for designing suitable components in the areas of miniaturized optoelectronic and spintronic devices.
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Affiliation(s)
- Hemanga Jyoti Sarmah
- Nanoscience and Soft-Matter Laboratory, Department of Physics, Tezpur University, Napaam, Tezpur-784028, India
| | - Dambarudhar Mohanta
- Nanoscience and Soft-Matter Laboratory, Department of Physics, Tezpur University, Napaam, Tezpur-784028, India
| | - Abhijit Saha
- UGC-DAE Consortium for Scientific Research, Kolkata Centre, Sector III/LB-8, Bidhan Nagar, Kolkata 700098, India
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37
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Mandyam SV, Kim HM, Drndić M. Large area few-layer TMD film growths and their applications. JPHYS MATERIALS 2020; 3:024008. [PMID: 36092286 PMCID: PMC9458871 DOI: 10.1088/2515-7639/ab82b3] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono- and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.
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Affiliation(s)
- Srinivas V Mandyam
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
| | - Hyong M Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
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38
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Bhardwaj R, Selamneni V, Thakur UN, Sahatiya P, Hazra A. Detection and discrimination of volatile organic compounds by noble metal nanoparticle functionalized MoS2 coated biodegradable paper sensors. NEW J CHEM 2020. [DOI: 10.1039/d0nj03491f] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/19/2023]
Abstract
In the current study, noble metal nanoparticle functionalized MoS2 coated biodegradable low-cost paper sensors were fabricated for the selective detection of low concentrations of volatile organic compounds (VOCs).
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Affiliation(s)
- Radha Bhardwaj
- Dept. of Electrical & Electronics Engineering
- BITS Pilani
- Pilani Campus
- India
| | | | | | - Parikshit Sahatiya
- Dept. of Electrical & Electronics Engineering
- BITS Pilani
- Hyderabad Campus
- India
| | - Arnab Hazra
- Dept. of Electrical & Electronics Engineering
- BITS Pilani
- Pilani Campus
- India
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39
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Kistanov AA. The first-principles study of the adsorption of NH3, NO, and NO2 gas molecules on InSe-like phosphorus carbide. NEW J CHEM 2020. [DOI: 10.1039/d0nj01612h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Novel γ-PC is a promising reversible material for room-temperature gas sensors.
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Affiliation(s)
- Andrey A. Kistanov
- Nano and Molecular Systems Research Unit
- University of Oulu
- 90014 Oulu
- Finland
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