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Lapizco-Encinas BH. Nonlinear Electrokinetic Methods of Particles and Cells. ANNUAL REVIEW OF ANALYTICAL CHEMISTRY (PALO ALTO, CALIF.) 2024; 17:243-264. [PMID: 38360552 DOI: 10.1146/annurev-anchem-061622-040810] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
Nonlinear electrokinetic phenomena offer label-free, portable, and robust approaches for particle and cell assessment, including selective enrichment, separation, sorting, and characterization. The field of electrokinetics has evolved substantially since the first separation reports by Arne Tiselius in the 1930s. The last century witnessed major advances in the understanding of the weak-field theory, which supported developments in the use of linear electrophoresis and its adoption as a routine analytical technique. More recently, an improved understanding of the strong-field theory enabled the development of nonlinear electrokinetic techniques such as electrorotation, dielectrophoresis, and nonlinear electrophoresis. This review discusses the operating principles and recent applications of these three nonlinear electrokinetic phenomena for the analysis and manipulation of particles and cells and provides an overview of some of the latest developments in the field of nonlinear electrokinetics.
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Affiliation(s)
- Blanca H Lapizco-Encinas
- Microscale Bioseparations Laboratory and Department of Biomedical Engineering, Rochester Institute of Technology, Rochester, New York, USA;
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2
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Abdulhameed A, Halim MM, Halin IA. Dielectrophoretic alignment of carbon nanotubes: theory, applications, and future. NANOTECHNOLOGY 2023; 34:242001. [PMID: 36921341 DOI: 10.1088/1361-6528/acc46c] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Accepted: 03/14/2023] [Indexed: 06/18/2023]
Abstract
Carbon nanotubes (CNTs) are nominated to be the successor of several semiconductors and metals due to their unique physical and chemical properties. It has been concerning that the anisotropic and low controllability of CNTs impedes their adoption in commercial applications. Dielectrophoresis (DEP) is known as the electrokinetics motion of polarizable nanoparticles under the influence of nonuniform electric fields. The uniqueness of this phenomenon allows DEP to be employed as a novel method to align, assemble, separate, and manipulate CNTs suspended in liquid mediums. This article begins with a brief overview of CNT structure and production, with the emphasize on their electrical properties and response to electric fields. The DEP phenomenon as a CNT alignment method is demonstrated and graphically discussed, along with its theory, procedure, and parameters. We also discussed the side forces that arise in DEP systems and how they negatively or positively affect the CNT alignment. The article concludes with a brief review of CNT-based devices fabricated using DEP, as well as the method's limitations and future prospects.
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Affiliation(s)
| | - Mohd Mahadi Halim
- School of Physics, Universiti Sains Malaysia, 11800 USM Penang, Malaysia
| | - Izhal Abdul Halin
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Putra Malaysia, Serdang, 43400, Malaysia
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Chai Z, Childress A, Busnaina AA. Directed Assembly of Nanomaterials for Making Nanoscale Devices and Structures: Mechanisms and Applications. ACS NANO 2022; 16:17641-17686. [PMID: 36269234 PMCID: PMC9706815 DOI: 10.1021/acsnano.2c07910] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 10/06/2022] [Indexed: 05/19/2023]
Abstract
Nanofabrication has been utilized to manufacture one-, two-, and three-dimensional functional nanostructures for applications such as electronics, sensors, and photonic devices. Although conventional silicon-based nanofabrication (top-down approach) has developed into a technique with extremely high precision and integration density, nanofabrication based on directed assembly (bottom-up approach) is attracting more interest recently owing to its low cost and the advantages of additive manufacturing. Directed assembly is a process that utilizes external fields to directly interact with nanoelements (nanoparticles, 2D nanomaterials, nanotubes, nanowires, etc.) and drive the nanoelements to site-selectively assemble in patterned areas on substrates to form functional structures. Directed assembly processes can be divided into four different categories depending on the external fields: electric field-directed assembly, fluidic flow-directed assembly, magnetic field-directed assembly, and optical field-directed assembly. In this review, we summarize recent progress utilizing these four processes and address how these directed assembly processes harness the external fields, the underlying mechanism of how the external fields interact with the nanoelements, and the advantages and drawbacks of utilizing each method. Finally, we discuss applications made using directed assembly and provide a perspective on the future developments and challenges.
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Affiliation(s)
- Zhimin Chai
- State
Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing100084, China
- NSF
Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing
(CHN), Northeastern University, Boston, Massachusetts02115, United States
| | - Anthony Childress
- NSF
Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing
(CHN), Northeastern University, Boston, Massachusetts02115, United States
| | - Ahmed A. Busnaina
- NSF
Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing
(CHN), Northeastern University, Boston, Massachusetts02115, United States
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Jeddi H, Karimi M, Witzigmann B, Zeng X, Hrachowina L, Borgström MT, Pettersson H. Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs. NANOSCALE 2021; 13:6227-6233. [PMID: 33885608 DOI: 10.1039/d1nr00846c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Here we report on the experimental results and advanced self-consistent real device simulations revealing a fundamental insight into the non-linear optical response of n+-i-n+ InP nanowire array photoconductors to selective 980 nm excitation of 20 axially embedded InAsP quantum discs in each nanowire. The optical characteristics are interpreted in terms of a photogating mechanism that results from an electrostatic feedback from trapped charge on the electronic band structure of the nanowires, similar to the gate action in a field-effect transistor. From detailed analyses of the complex charge carrier dynamics in dark and under illumination was concluded that electrons are trapped in two acceptor states, located at 140 and 190 meV below the conduction band edge, at the interface between the nanowires and a radial insulating SiOx cap layer. The non-linear optical response was investigated at length by photocurrent measurements recorded over a wide power range. From these measurements were extracted responsivities of 250 A W-1 (gain 320)@20 nW and 0.20 A W-1 (gain 0.2)@20 mW with a detector bias of 3.5 V, in excellent agreement with the proposed two-trap model. Finally, a small signal optical AC analysis was made both experimentally and theoretically to investigate the influence of the interface traps on the detector bandwidth. While the traps limit the cut-off frequency to around 10 kHz, the maximum operating frequency of the detectors stretches into the MHz region.
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Affiliation(s)
- Hossein Jeddi
- School of Information Technology, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden.
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Jung K, Choi W, Huang HC, Kim JD, Chabak K, Li X. Elastocapillary Force Induced Alignment of Large Area Planar Nanowires. ACS APPLIED MATERIALS & INTERFACES 2021; 13:11177-11184. [PMID: 33646764 DOI: 10.1021/acsami.0c20289] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Achieving large scale precise positioning of the vapor-liquid-solid (VLS) nanowires is one of the biggest challenges for mass production of nanowire-based devices. Although there have been many noteworthy progresses in postgrowth nanowire alignment method development over the past few decades, these methods are mostly suitable for low density applications only. For high density applications such as transistors, both high yield and density are required. Here, we report an elastocapillary force-induced nanowire-aligning method that is extremely simple, clean, and can achieve single/multiple nanowire arrays with up to 98.8% yield and submicron pitch between the nanowires.
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Affiliation(s)
- Kyooho Jung
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Wonsik Choi
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Hsien-Chih Huang
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Jeong Dong Kim
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Kelson Chabak
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Xiuling Li
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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Wang D, Chen X, Fang X, Tang J, Lin F, Wang X, Liu G, Liao L, Ho JC, Wei Z. Photoresponse improvement of mixed-dimensional 1D-2D GaAs photodetectors by incorporating constructive interface states. NANOSCALE 2021; 13:1086-1092. [PMID: 33393960 DOI: 10.1039/d0nr06788a] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Mixed-dimensional optoelectronic devices bring new challenges and opportunities over the design of conventional low-dimensional devices. In this work, we develop unreported mixed-dimensional GaAs photodetectors by utilizing 1D GaAs nanowires (NWs) and 2D GaAs non-layered sheets (2DNLSs) as active device materials. The fabricated photodetector exhibits a responsivity of 677 A W-1 and a detectivity of 8.69 × 1012 cm Hz0.5 W-1 under 532 nm irradiation, which are already much better than those of state-of-the-art low-dimensional GaAs photodetectors. It is found that this unique device structure is capable of converting the notoriously harmful surface states of NWs and 2DNLSs into their constructive interface states, which contribute to the formation of quasi-type-II band structures and electron wells in the device channel for the substantial performance enhancement. More importantly, these interface states are demonstrated to be insensitive to ambient environments, indicating the superior stability of the device. All these results evidently illustrate a simple but effective way to utilize the surface states of nanomaterials to achieve the high-performance photodetectors.
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Affiliation(s)
- Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Xue Chen
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Xinwei Wang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Guanlin Liu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Lei Liao
- State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
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Budiman F, Silalahi DK, Muhamad B, Fathurahman MR, Rozana M, Tanaka H. Wirelessly powered dielectrophoresis of metal oxide particles using spark-gap Tesla coil. Electrophoresis 2020; 41:2159-2165. [PMID: 33029799 DOI: 10.1002/elps.202000102] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2020] [Revised: 07/29/2020] [Accepted: 09/12/2020] [Indexed: 12/18/2022]
Abstract
Wirelessly powered dielectrophoresis (DEP) of metal oxide particles was performed using a spark-gap Tesla coil (TC). The main contribution of this work is the simplification of the conventional DEP setup that requires attaching wires directly to the electrodes. Wireless power from the TC generates a high output frequency and voltage, which corresponds to that used for the DEP. Therefore, a spark-gap TC was built and utilized to conduct the DEP process. Metal oxides (ZnO and Fe2O3) were used as targets for the assembly. The results showed that the wirelessly powered DEP technique via a TC was successful in assembling the metal oxide particles. Positive and negative DEP phenomena were observed. Positive DEP occurred during ZnO assembly, making particles chain grow 0.92 mm toward the sparks within 60 s. Negative DEP was observed during Fe2O3 assembly, where the repulsion of particles formed a void around the sparks with a 1.45 mm radius. The mechanism of this wireless DEP system is discussed.
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Affiliation(s)
- Faisal Budiman
- School of Electrical Engineering, Telkom University, Jl. Telekomunikasi no. 1, Bandung, West Java, 40257, Indonesia
- Research Center for Internet of Things, Telkom University, Jl. Telekomunikasi no. 1, Bandung, West Java, 40257, Indonesia
| | - Desri Kristina Silalahi
- School of Electrical Engineering, Telkom University, Jl. Telekomunikasi no. 1, Bandung, West Java, 40257, Indonesia
| | - Bagaskoro Muhamad
- School of Electrical Engineering, Telkom University, Jl. Telekomunikasi no. 1, Bandung, West Java, 40257, Indonesia
| | - Muhammad Rafi Fathurahman
- School of Electrical Engineering, Telkom University, Jl. Telekomunikasi no. 1, Bandung, West Java, 40257, Indonesia
| | - Monna Rozana
- Research Unit for Clean Technology, Indonesia Institute of Science, Jl. Sangkuriang - Komplek LIPI, Bandung, West Java, 40135, Indonesia
| | - Hirofumi Tanaka
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, Fukuoka, 808-0135, Japan
- Research Center for Neuromorphic AI Hardware, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, Fukuoka, 808-0135, Japan
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Sarkar K, Devi P, Kim KH, Kumar P. III-V nanowire-based ultraviolet to terahertz photodetectors: Device strategies, recent developments, and future possibilities. Trends Analyt Chem 2020. [DOI: 10.1016/j.trac.2020.115989] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
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9
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Monaico EI, Monaico EV, Ursaki VV, Honnali S, Postolache V, Leistner K, Nielsch K, Tiginyanu IM. Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2020; 11:966-975. [PMID: 32704459 PMCID: PMC7356395 DOI: 10.3762/bjnano.11.81] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2020] [Accepted: 05/27/2020] [Indexed: 06/11/2023]
Abstract
A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 µm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated.
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Affiliation(s)
- Elena I Monaico
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
| | - Eduard V Monaico
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
| | - Veaceslav V Ursaki
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
- Academy of Sciences of Moldova, Chisinau MD-2001, Republic of Moldova
| | | | - Vitalie Postolache
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
| | - Karin Leistner
- Leibniz IFW Dresden, Helmholtzstr. 20, 01069 Dresden, Germany
| | | | - Ion M Tiginyanu
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
- Academy of Sciences of Moldova, Chisinau MD-2001, Republic of Moldova
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Singh SK, Rajib MM, Drobitch JL, Atulasimha J, Bandyopadhyay S, Subramanian A. A 3-D NanoMagnetoElectrokinetic model for ultra-high precision assembly of ferromagnetic NWs using magnetic-field assisted dielectrophoresis. RSC Adv 2020; 10:39763-39770. [PMID: 35515396 PMCID: PMC9057435 DOI: 10.1039/d0ra08381j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2020] [Revised: 11/20/2020] [Accepted: 10/23/2020] [Indexed: 02/02/2023] Open
Abstract
This report presents a three-dimensional (3-D) magnetoelectrokinetic model to investigate a new approach to magnetic-field assisted dielectrophoresis for ultra-high precision and parallel assembly of ferromagnetic Ni nanowires (NWs) on silicon chips. The underlying assembly methodology relies on a combination of electric and magnetic fields to manipulate single nanowires from a colloidal suspension and yield their assembly on top of electrodes with better than 25 nm precision. The electric fields and the resultant dielectrophoretic forces are generated through the use of patterned gold nanoelectrodes, and deliver long-range forces that attract NWs from farther regions of the workspace and bring them in proximity to the nanoelectrodes. Next, magnetic-fields generated by cobalt magnets, which are stacked on top of the gold nanoelectrodes at their center and pre-magnetized using external magnetic fields, deliver short range forces to capture the nanowires precisely on top of the nanomagnets. The 3-D NanoMagnetoElectrokinetic model, which is built using a finite element code in COMSOL software and with further computations in MATLAB, computes the trajectory and final deposition location as well as orientation for all possible starting locations of a Ni NW within the assembly workspace. The analysis reveals that magnetic-field assisted dielectrophoresis achieves ultra-high precision assembly of NWs on top of the cobalt nanomagnets from a 42% larger workspace volume as compared to pure dielectrophoresis and thereby, establishes the benefits of adding magnetic fields to the assembly workspace. Furthermore, this approach is combined with a strategy to confine the suspension within the reservoir that contains a high density of favorable NW starting locations to deliver high assembly yields for landing NWs on top of contacts that are only twice as wide as the NWs. Magnetic-field assisted dielectrophoresis delivers ultra-high precision assembly of single nanowires.![]()
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Affiliation(s)
- Sachin K. Singh
- Department of Mechanical and Industrial Engineering
- University of Illinois at Chicago
- Chicago
- USA
| | - Md Mahadi Rajib
- Department of Mechanical and Nuclear Engineering
- Virginia Commonwealth University
- Richmond
- USA
| | - Justine L. Drobitch
- Department of Electrical and Computer Engineering
- Virginia Commonwealth University
- Richmond
- USA
| | - Jayasimha Atulasimha
- Department of Mechanical and Nuclear Engineering
- Virginia Commonwealth University
- Richmond
- USA
| | - Supriyo Bandyopadhyay
- Department of Electrical and Computer Engineering
- Virginia Commonwealth University
- Richmond
- USA
| | - Arunkumar Subramanian
- Department of Mechanical and Industrial Engineering
- University of Illinois at Chicago
- Chicago
- USA
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