New approach for the molecular beam epitaxy growth of scalable WSe2 monolayers

Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.

Use of transition metal dichalcogenides (TMDs) in analytical sample preparation applications

Since the discovery of graphene, nano-sized two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoS2, MoSe2, MoTe2, NbS2, NbSe2, WS2, WSe2, TaS2 and TaSe2, which have been classified as next-generation nanomaterials resembling graphene (G) have complementary basic properties with those of graphene in terms of their practical applications. TMDs are attracting great attention due to their attractive physical, chemical and electronic properties. Despite being overshadowed by graphene in terms of frequency of use, TMDs have been used frequently in many areas in recent years instead of carbon-based materials such as graphene (G), graphene oxide (GO), carbon nanotubes (CNTs) and nanodiamonds (NDs). It is seen that the first and frequent uses of TMDs, which are classified as new generation materials, are in the fields of catalysis, electronic applications, hydrogen production processes and energy storage, but it has been used as an adsorbent in sample preparation techniques in recent years. Similar to graphene, layers of TMDs are held together by weak van der Waals interactions. The sandwiched layers of TMDs provide sufficient and effective interlayer spaces so that foreign molecules, ions and atoms can easily enter these spaces between the layers. Intermolecular interactions increase with the entry of different materials into these spaces, and thus, high activity, adsorption capacity and efficiency are obtained in adsorption-based analytical sample preparation methods. Although there are about 35 research articles using TMDs, which are classified as promising materials in analytical sample preparation techniques, no review studies have been found. This review, which was designed with this awareness, contains important informations on the properties of metal dichalcogenides, their production methods and their use in analytical sample preparation techniques.

Visualizing Giant Ferroelectric Gating Effects in Large-Scale WSe2/BiFeO3 Heterostructures

Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc.) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO₃, a room-temperature multiferroic oxide, and WSe₂, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe₂ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO₃ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe₂ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO₃. Such a strong shift opens new perspectives in the efficient manipulation of TMD properties by proximity effects.

P-Type 2D Semiconductors for Future Electronics

2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.

Tuning of Thermoelectric Properties of MoSe2 Thin Films Under Helium Ion Irradiation

Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, their thermoelectric parameters such as Seebeck coefficient, electrical conductivity, and thermal conductivity are interdependent, which is a drawback. Therefore, it is necessary to find a way to adjust one of these parameters without affecting the other parameters. In this study, we investigated the effect of helium ion irradiation on MoSe₂ thin films with the objective of controlling the Seebeck coefficient and electrical conductivity. At the optimal irradiation dose of 10¹⁵ cm^-2, we observed multiple enhancements of the power factor resulting from an increase in the electrical conductivity, with slight suppression of the Seebeck coefficient. Raman spectroscopy, X-ray diffraction, and transmission electron microscopy analyses revealed that irradiation-induced selenium vacancies played an important role in changing the thermoelectric properties of MoSe₂ thin films. These results suggest that helium ion irradiation is a promising method to significantly improve the thermoelectric properties of two-dimensional transition metal dichalcogenides. Effect of He⁺ irradiation on thermoelectric properties of MoSe₂ thin films.