MoS2/WSe2nanohybrids for flexible paper-based photodetectors

Boosting the UV-vis-NIR Photodetection Performance of MoS2 through the Cavity Enhancement Effect and Bulk Heterojunction Strategy

Navigating more effective methods to enhance the photon utilization of photodetectors poses a significant challenge. This study initially investigates the impact of morphological alterations in 2H-MoS2 on photodetector (PD) performance. The results reveal that compared to layered MoS2 (MoS2 NLs), MoS2 nanotubes (MoS2 NTs) impart a cavity enhancement effect through multiple light reflections. This structural feature significantly enhances the photodetection performance of the MoS2-based PDs. We further employ the heterojunction strategy to construct Y-TiOPc NPs:MoS2 NTs, utilizing Y-TiOPc NPs (Y-type titanylphthalocyanine) as the vis-NIR photosensitizer and MoS2 NTs as the photon absorption enhancer. This approach not only addresses the weak absorption of MoS2 NTs in the near-infrared region but also enhances carrier generation, separation, and transport efficiency. Additionally, the band bending phenomenon induced by trapped-electrons at the interface between ITO and the photoactive layer significantly enhances the hole tunneling injection capability from the external circuit. By leveraging the synergistic effects of the aforementioned strategies, the PD based on Y-TiOPc NPs:MoS2 NTs (Y:MT-PD) exhibits superior photodetection performance in the wavelength range of 365-940 nm compared to MoS2 NLs-based PD and MoS2 NTs-based PD. Particularly noteworthy are the peak values of key metrics for Y:MT-PD, such as EQE, R, and D* that are 4947.6%, 20588 mA/W, and 1.94 × 1012 Jones, respectively. The multiperiod time-resolved photocurrent response curves of Y:MT-PD also surpass those of the other two PDs, displaying rapid, stable, and reproducible responses across all wavelengths. This study provides valuable insights for the further development of photoactive materials with a high photon utilization efficiency.

Spray-lithography of hybrid graphene-perovskite paper-based photodetectors for sustainable electronics

Paper is an ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems. When combined with nanomaterial-based devices, it can be harnessed for various Internet-of-Things applications, ranging from wearable electronics to smart packaging. However, paper remains a challenging substrate for electronics due to its rough and porous nature. In addition, the absence of established fabrication methods is impeding its utilization in wearable applications. Unlike other paper-based electronics with added layers, in this study, we present a scalable spray-lithography on a commercial paper substrate. We present a non-vacuum spray-lithography of chemical vapor deposition (CVD) single-layer graphene (SLG), carbon nanotubes (CNTs) and perovskite quantum dots (QDs) on a paper substrate. This approach combines the advantages of two large-area techniques: CVD and spray-coating. The first technique allows for the growth of SLG, while the second enables the spray coating of a mask to pattern CVD SLG, electrodes (CNTs), and photoactive (QDs) layers. We harness the advantages of perovskite QDs in photodetection, leveraging their strong absorption coefficients. Integrating them with the graphene enhances the photoconductive gain mechanism, leading to high external responsivity. The presented device shows high external responsivity of ∼520 A W-1at 405 nm at <1 V bias due to the photoconductive gain mechanism. The prepared paper-based photodetectors (PDs) achieve an external responsivity of 520 A W-1under 405 nm illumination at <1 V operating voltage. To the best of our knowledge, our devices have the highest external responsivity among paper-based PDs. By fabricating arrays of PDs on a paper substrate in the air, this work highlights the potential of this scalable approach for enabling ubiquitous electronics on paper.

Fabrication of a wearable and foldable photodetector based on a WSe2-MXene 2D-2D heterostructure using a scalable handprint technique

Several studies on semiconductor material-based single-band, high-performance photosensitive, and chemically stable photodetectors are available; however, the lack of broad spectral response, device flexibility, and biodegradability prevents them from being used in wearable and flexible electronics. Apart from that, the selection of the device fabrication technique is a very crucial factor nowadays in terms of equipment utilization and environmental friendliness. This report presents a study demonstrating a straightforward solvent- and equipment-free handprint technique for the fabrication of WSe2-Ti3C2TX flexible, biodegradable, robust, and broadband (Vis-NIR) photodetectors. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX), UV-visible spectroscopy, and X-ray photoelectron spectroscopy (XPS) confirm the formation of a WSe2-Ti3C2TX film. The WSe2-Ti3C2TX van der Waals heterostructure plays a key role in enhancing the optoelectrical properties. The as-prepared photodetector exhibits efficient broadband response with a photoresponsivity and a detectivity of 0.3 mA W-1 and 6.8 × 1010 Jones, respectively, under NIR (780 nm) irradiation (1.0 V bias). Under various pressure and temperature conditions, the device's flexibility and durability were tested. The biodegradable photodetector prepared through the solvent- and equipment-free handprint technique has the potential to attract significant interest in wearable and flexible electronics in the future.

Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials

Flexible photodetectors (PDs) have exotic significance in recent years due to their enchanting potential in future optoelectronics. Moreover, paper-based fabricated PDs with outstanding flexibility unlock new avenues for future wearable electronics. Such PD has captured scientific interest for its efficient photoresponse properties due to the extraordinary assets like significant absorptive efficiency, surface morphology, material composition, affordability, bendability, and biodegradability. Quantum-confined materials harness the unique quantum-enhanced properties and hold immense promise for advancing both fundamental scientific understanding and practical implication. Two-dimensional (2D) materials as quantum materials have been one of the most extensively researched materials owing to their significant light absorption efficiency, increased carrier mobility, and tunable band gaps. In addition, 2D heterostructures can trap charge carriers at their interfaces, leading increase in photocurrent and photoconductivity. This review represents comprehensive discussion on recent developments in such PDs functionalized by 2D materials, highlighting charge transfer mechanism at their interface. This review thoroughly explains the mechanism behind the enhanced performance of quantum materials across a spectrum of figure of merits including external quantum efficiency, detectivity, spectral responsivity, optical gain, response time, and noise equivalent power. The present review studies the intricate mechanisms that reinforce these improvements, shedding light on the intricacies of quantum materials and their significant capabilities. Moreover, a detailed analysis of the technical applicability of paper-based PDs has been discussed with challenges and future trends, providing comprehensive insights into their practical usage in the field of future wearable and portable electronic technologies.

Probing the Critical Role of Interfaces for Superior Performance in PbS Quantum Dot/Graphene Nanohybrid Broadband Photodetectors

Colloidal quantum dots/graphene (QD/Gr) nanohybrids have been studied intensively for photodetection in a broadband spectrum including ultraviolet, visible, near-infrared, and shortwave infrared (UV-vis-NIR-SWIR). Since the optoelectronic process in the QD/Gr nanohybrid relies on the photogenerated charge carrier transfer from QDs to graphene, understanding the role of the QD-QD and QD-Gr interfaces is imperative to the QD/Gr nanohybrid photodetection. Herein, a systematic study is carried out to probe the effect of these interfaces on the noise, photoresponse, and specific detectivity in the UV-vis-NIR-SWIR spectrum. Interestingly, the photoresponse has been found to be negligible without a 3-mercaptopropionic acid (MPA) ligand exchange, moderate with a single ligand exchange after all QD layers are deposited on graphene, and maximum if it is performed after each QD layer deposition up to five layers of total QD thickness of 260-280 nm. Furthermore, exposure of graphene to C-band UV (UVC) for a short period of 4-5 min before QD deposition leads to improved photoresponse via removal of polar molecules at the QD/Gr interface. With the combination of the MPA ligand exchange and UVC exposure, optimal optoelectronic properties can be obtained on the PbS QD/Gr nanohybrids with high specific detectivity up to 2.6 × 1011, 1.5 × 1011, 5 × 1010, and 1.9 × 109 Jones at 400, 550, 1000, and 1700 nm, respectively, making the nanohybrids promising for broadband photodetection.

Multilayer WS2 for low-power visible and near-infrared phototransistors

Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

High-performance broadband flexible photodetector based on Gd3Fe5O12-assisted double van der Waals heterojunctions

Flexible photodetectors are fundamental components for developing wearable systems, which can be widely used for medical detection, environmental monitoring and flexible imaging. However, compared with 3D materials, low-dimensional materials have degraded performance, a key challenge for current flexible photodetectors. Here, a high-performance broadband photodetector has been proposed and fabricated. By combining the high mobility of graphene (Gr) with the strong light-matter interactions of single-walled carbon nanotubes (SWCNTs) and molybdenum disulfide (MoS2), the flexible photodetector exhibits a greatly improved photoresponse covering the visible to near-infrared range. Additionally, a thin layer of gadolinium iron garnet (Gd3Fe5O12, GdlG) film is introduced to improve the interface of the double van der Waals heterojunctions to reduce the dark current. The SWCNT/GdIG/Gr/GdIG/MoS2 flexible photodetector exhibits a high photoresponsivity of 47.375 A/W and a high detectivity of 1.952 × 1012 Jones at 450 nm, a high photoresponsivity of 109.311 A/W and a high detectivity of 4.504 × 1012 Jones at 1080 nm, and good mechanical stability at room temperature. This work demonstrates the good capacity of GdIG-assisted double van der Waals heterojunctions on flexible substrates and provides a new solution for constructing high-performance flexible photodetectors.

Paper-based broadband flexible photodetectors with van der Waals materials

Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405–810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS₃ (1.50 mA/W) and MoS₂ (1.13 μA/W) PDs, the TiS₃–MoS₂ heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron–hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS₃–MoS₂ heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS₂ PD demonstrated very high flexibility under applied strain, but TiS₃ based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances.

High-Performance and Broadband Flexible Photodetectors Employing Multicomponent Alloyed 1D CdSxSe1-x Micro-Nanostructures

Low-cost multicomponent alloyed one-dimensional (1D) semiconductors exhibit broadband absorption from the ultraviolet to the near-infrared regime, which has attracted a great deal of interest in high-performance flexible optoelectronic devices. Here, we report the facile one-step fabrication of high-performance broadband rigid and flexible photodevices based on multicomponent alloyed 1D cadmium-sulfur-selenide (CdS_xSe_1-x) micro-nanostructures obtained via a vapor transport route. Photoresponse measurements have demonstrated their superior spectral photoresponsivity (5.8 × 10⁴ A/W), several orders of magnitude higher than the pristine CdSe nanobelt photodevice, high specific detectivity (2 × 10¹⁵ Jones), photogain (1.2 × 10⁵), external quantum efficiency (EQE, 1.4 × 10⁷%), rapid response speed (13 ms), and excellent long-term environmental stability. The multicomponent alloyed CdS_xSe_1-x nanobelt photodevice demonstrated about three times higher photocurrent as well as can operate under multiple color illuminations (200-800 nm) and at a high applied bias of 10 V with the photoresponsivity and EQE being boosted to 4.34 × 10⁵ A/W and 8.96 × 10⁷%, respectively. Furthermore, multicomponent alloyed CdS_xSe_1-x nanobelt flexible photodevices show excellent mechanical and flexural photostabilities with identical photoresponse as rigid nanodevices. The improvement mechanism found in the present research can be exploited to lead to the design of high-performance flexible photodevices comprising other multicomponent nanomaterials.

Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption

We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn) photodetectors (PDs) with an extended photodetection range based on sub-bandgap absorption. Single-crystalline GeSn membranes transfer-printed on poly(ethylene terephthalate) are integrated with plasmonic TiN to form a TiN/GeSn heterojunction. Formation of the heterojunction creates a Schottky contact between the TiN and GeSn. A Schottky barrier height of 0.49 eV extends the photodetection wavelength to 2530 nm and further enhances the light absorption capability within the detection range. In addition, finite-difference time-domain simulation proves that the integration of TiN and GeSn could enhance average absorption from 0.13 to 0.33 in the near-infrared (NIR) region (e.g., 1400-2000 nm) and more than 70% of light is absorbed in TiN. The responsivity of the fabricated TiN/GeSn PDs is increased from 30 to 148.5 mA W^-1 at 1550 nm. There is also an ∼180 nm extension in the optical absorption wavelength of the flexible TiN/GeSn PD. The enhanced performance of the device is attributed to the absorption and separation of plasmonic hot carriers via TiN and the TiN/GeSn junction, respectively. The effect of external uniaxial strain is also investigated. A tensile strain of 0.3% could further increase the responsivity from 148.5 to 218 mA W^-1, while it is decreased to 102 mA W^-1 by 0.25% compressive strain. In addition, the devices maintain stable performance after multiple and long bending cycles. Our results provide a robust and cost-effective method to extend the NIR photodetection capability of flexible group IV PDs.

Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect

Ambipolar photoresponsivity mainly originates from intrinsic or interfacial defects. However, these defects are difficult to control and will prolong the response speed of the photodetector. Here, we demonstrate tunable ambipolar photoresponsivity in a photodetector built from vertical p-WSe₂/n-InSe heterostructures with photogating effect, exhibiting ultrahigh photoresponsivity from -1.76 × 10⁴ to 5.48 × 10⁴ A/W. Moreover, the photodetector possesses broadband photodetection (365-965 nm), an ultrahigh specific detectivity (D*) of 5.8 × 10¹³ Jones, an external quantum efficiency of 1.86 × 10⁷%, and a rapid response time of 20.8 ms. The WSe₂/InSe vertical architecture has promising potential in developing high-performance nano-optoelectronics.