High-performance polarization-sensitive photodetectors on two-dimensional β -InSe

Metal-Organic Framework-Based Photodetectors

The unique and interesting physical and chemical properties of metal-organic framework (MOF) materials have recently attracted extensive attention in a new generation of photoelectric applications. In this review, we summarized and discussed the research progress on MOF-based photodetectors. The methods of preparing MOF-based photodetectors and various types of MOF single crystals and thin film as well as MOF composites are introduced in details. Additionally, the photodetectors applications for X-ray, ultraviolet and infrared light, biological detectors, and circularly polarized light photodetectors are discussed. Furthermore, summaries and challenges are provided for this important research field.

Van der Waals Ferroelectrics: Theories, Materials, and Device Applications

In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.

Reveal long-lived hot electrons in 2D indium selenide and ferroelectric-regulated carrier dynamics of InSe/α-In2Se3/InSe heterostructure

As typical representatives of group III chalcogenides, InSe, α-In2Se3, and β'-In2Se3 have drawn considerable interest in the domain of photoelectrochemistry. However, the microscopic mechanisms of carrier dynamics in these systems remain largely unexplored. In this work, we first reveal that hot electrons in the three systems have different cooling rate stages and long-lived hot electrons, through the utilization of density functional theory calculations and nonadiabatic molecular dynamics simulations. Furthermore, the ferroelectric polarization of α-In2Se3 weakens the nonadiabatic coupling of the nonradioactive recombination, successfully competing with the narrow bandgap and slow dephasing process, and achieving both high optical absorption efficiency and long carrier lifetime. In addition, we demonstrate that the ferroelectric polarization of α-In2Se3 not only enables the formation of the double type-II band alignment in the InSe/α-In2Se3/InSe heterostructure, with the top and bottom InSe sublayers acting as acceptors and donors, respectively, but also eliminates the hindrance of the built-in electric field at the interface, facilitating an ultrafast interlayer carrier transfer in the heterojunction. This work establishes an atomic mechanism of carrier dynamics in InSe, α-In2Se3, and β'-In2Se3 and the regulatory role of the ferroelectric polarization on the charge carrier dynamics, providing a guideline for the design of photoelectronic materials.

Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging

The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.

Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure

Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification of light polarization. To date, the existing technologies yet sustain the poor polarization sensitivity (<10), far from market application requirement. Here, the photovoltaic detectors with polarization- and gate-tunable optoelectronic reverse phenomenon are developed based on semimetal 1T'-MoTe2 and ambipolar WSe2 . The device exhibits gate-tunable reverse in rectifying and photovoltaic characters due to the directional inversion of energy band, yielding a wide range of current rectification ratio from 10-2 to 103 and a clear object imaging with 100 × 100 pixels. Acting as a polarimetric photodetector, the polarization ratio (PR) value can reach a steady state value of ≈30, which is compelling among the state-of-the-art 2D-based polarized detectors. The sign reversal of polarization-sensitive photocurrent by varying the light polarization angles is also observed, that can enable the PR value with a potential to cover possible numbers (1→+∞/-∞→-1). This work develops a photovoltaic detector with polarization- and gate-tunable optoelectronic reverse phenomenon, making a significant progress in polarimetric imaging and multifunction integration applications.

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

Synthesis, Properties, and Application of Ultrathin and Flexible Tellurium Nanorope Films: Beyond Conventional 2D Materials

Nanomaterials that can be easily processed into thin films are highly desirable for their wide range of applicability in electrical and optical devices. Currently, Te-based 2D materials are of interest because of their superior electrical properties compared to transition metal dichalcogenide materials. However, the large-scale manufacturing of these materials is challenging, impeding their commercialization. This paper reports on ultrathin, large-scale, and highly flexible Te and Te-metal nanorope films grown via low-power radiofrequency sputtering for a short period at 25 °C. Additionally, the feasibility of such films as transistor channels and flexible transparent conductive electrodes is discussed. A 20 nm thick Te-Ni-nanorope-channel-based transistor exhibits a high mobility (≈450 cm2 V-1 s-1 ) and on/off ratio (105 ), while 7 nm thick Te-W nanorope electrodes exhibit an extremely low haze (1.7%) and sheet resistance (30 Ω sq-1 ), and high transmittance (86.4%), work function (≈4.9 eV), and flexibility. Blue organic light-emitting diodes with 7 nm Te-W anodes exhibit significantly higher external quantum efficiencies (15.7%), lower turn-on voltages (3.2 V), and higher and more uniform viewing angles than indium-tin-oxide-based devices. The excellent mechanical flexibility and easy coating capability offered by Te nanoropes demonstrate their superiority over conventional nanomaterials and provide an effective outlet for multifunctional devices.

Broadband, Polarization-Sensitive, and Self-Powered High-Performance Photodetection of Hetero-Integrated MoS2 on Lithium Niobate

High-performance photodetectors hold promising potential in optical communication and imaging systems. However, conventional counterparts are suffering narrow detection range, high power consumption, and poor polarization sensitivity. Characteristics originating from switchable polarization in ferroelectrics can be used to optimize the photo-to-electric procedure and improve the photodetection performance. In this regard, we constructed a configuration by integrating 2-dimensional molybdenum disulfide (MoS₂) with ferroelectric lithium niobate (LiNbO₃), resulting in the MoS₂/LiNbO₃ heterostructured photodetector. Benefiting from the pyroelectric effect of LiNbO₃, the limitation of bandgap on the detection range can be broken, thus broadening the response band of the detector to 365 to 1,064 nm, as well as enabling the self-powered characteristic. Meanwhile, high carrier mobility and decent light absorbance of MoS₂ introduce robust light-matter interactions with the underlying LiNbO₃, leading to ultrafast rise/fall times of ≈150 μs/250 μs and switching ratios of up to ≈190. Moreover, the highest responsivity, specific detectivity, and external quantum efficiency achieved were 17.3 A·W^-1, 4.3 × 10¹¹ Jones, and 4,645.78%, respectively. Furthermore, because of the anisotropy of the spontaneous-polarized LiNbO₃ substrate, the photocurrent of the device achieved a dichroic ratio of 7.42, comparing favorably to most MoS₂-based photodetectors. This work demonstrates the integration potential between ferroelectric LiNbO₃ and 2-dimensional materials for high-performance photodetection.

Two dimensional NbSe2/Nb2O5 metal-semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

Two dimensional (2D) metal-semiconductor heterostructures are promising for high-performance optoelectronic devices due to fast carrier separation and transportation. Considering the superior metallic characteristics accompanied by high electrical conductivity in NbSe₂, surface oxidation provides a facile way to form NbSe₂/Nb₂O₅ metal-semiconductor heterostructures. Herein, size-dependent NbSe₂/Nb₂O₅ nanosheets were achieved by a liquid phase exfoliation method and a gradient centrifugation strategy. These NbSe₂/Nb₂O₅ heterostructure-based photodetectors show high responsivity with 23.21 μA W^-1, fast response time of millisecond magnitude, and wide band detection ability in the UV-Vis region. It is noticeable that the photocurrent density is sensitive to the surface oxygen layer due to the oxygen-sensitized photoconduction mechanism. The flexible testing of the NbSe₂/Nb₂O₅ heterostructure-based PEC-type photodetectors exhibits high photodetection performance even after bending and twisting. Beyond that, the solid-state PEC-type NbSe₂/Nb₂O₅ photodetector also achieves relatively stable photodetection and high stability. This work promotes the application of 2D NbSe₂/Nb₂O₅ metal-semiconductor heterostructures in flexible optoelectronic devices.

Ternary GePdS3: 1D van der Waals Nanowires for Integration of High-Performance Flexible Photodetectors

One-dimensional (1D) van der Waals (vdW) materials are anticipated to leverage for high-performance, giant polarized, and hybrid-dimension photodetection owing to their dangling-bond free surface, intrinsic crystal structure, and weak vdW interaction. However, only a few related explorations have been conducted, especially in the field of flexible and integrated applications. Here, high-quality 1D vdW GePdS₃ nanowires were synthesized and proven to be an n-type semiconductor. The Raman vibration and band gap (1.37-1.68 eV, varying from bulk to single chain) of GePdS₃ were systemically studied by experimental and theoretical methods. The photodetector based on a single GePdS₃ nanowire possesses fast photoresponse at a broadband spectrum of 254-1550 nm. The highest responsivity and detectivity reach up to ∼219 A/W and ∼2.7 × 10¹⁰ Jones (under 254 nm light illumination), respectively. Furthermore, an image sensor with 6 × 6 pixels based on GePdS₃ nanowires is integrated on a flexible polyethylene terephthalate (PET) substrate and exhibits sensitive and homogeneous detection at 808 nm light. These results indicate that the ternary noble metal chalcogenides show great potential in flexible and broadband optoelectronics applications.

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

The room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. Low temperature growth supersedes the requirement of elevated growth temperatures accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of the functional properties and the consequent deterioration of the device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process, which exhibited various functional properties for potential applications. Comprehensive chemical, spectroscopic and microscopic characterizations confirmed the growth of ordered nanosheet-like hexagonal BN (h-BN). Functionally, the nanosheets show hydrophobicity, high lubricity (low coefficient of friction), and a low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of potential applications for these room temperature grown h-BN nanosheets as the synthesis can be feasible on any given substrate, thus creating a scenario for "h-BN on demand" under a frugal thermal budget.

Quasi-One-Dimensional ZrS3 Nanoflakes for Broadband and Polarized Photodetection with High Tuning Flexibility

Two-dimensional (2D) layered materials with low crystal symmetries have exhibited unique anisotropic physical properties. Here, we report systematic studies on the photoresponse of field effect transistors (FETs) fabricated using quasi-one-dimensional ZrS₃ nanoflakes. The as-fabricated phototransistors exhibit a broadband photocurrent response from ultraviolet to visible regions, where the responsivity and detectivity can be enhanced via additional gate voltages. Furthermore, benefiting from the strong in-plane anisotropy of ZrS₃, we observe a gate-voltage and illumination wavelength-dependent polarized photocurrent response, while its sub-millisecond-time response speed is also polarization-dependent. Our results demonstrate the flexible tunability of photodetectors based on anisotropic layered semiconductors, which substantially broadens the application of low symmetry layered materials in polarization-sensitive optoelectronic devices.

Spotting the driving forces for SERS of two-dimensional nanomaterials

Recently, two-dimensional (2D) layered nanomaterials have become promising candidates for surface-enhanced Raman scattering (SERS) substrates due to their unique characteristics of ultrathin layer structure, outstanding optical properties and good biocompatibility, significantly contributing to remarkable SERS sensitivity, stability, and compatibility. Unlike traditional SERS substrates, 2D nanomaterials possess unparalleled layer-dependent, phase transition induced and anisotropic optical properties, which as driving forces significantly promote the SERS performance and development, as well as greatly enrich the SERS substrates and provide versatile resources for SERS research. For a profound understanding of the SERS effect of 2D nanomaterials, a review concentrating on these driving forces for SERS enhancement on 2D nanomaterials is written here for the first time, which strongly emphasizes the importance and influence of these driving forces on the SERS effect of 2D nanomaterials, including their intrinsic physical and chemical properties and external influencing factors. Moreover, the essential mechanisms of these driving forces for the SERS effect are also elaborated systematically. Finally, the challenges and future perspectives of SERS substrates based on 2D nanomaterials are concluded. This review will provide guiding principles and strategies for designing highly sensitive 2D nanomaterial SERS substrates and extending their potential applications based on SERS.

Room-temperature spin-valve devices based on Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals heterojunctions

The spin-valve effect has been the focus of spintronics over the last decades due to its potential for application in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly efficient to build spin-valve heterojunctions. However, the Curie temperatures (T_C) of the vdW ferromagnetic (FM) 2D crystals are mostly below room temperature (∼30-220 K). It is very challenging to develop room-temperature, FM 2D crystal-based spin-valve devices. Here, we report room-temperature, FM 2D-crystal-based all-2D vdW Fe₃GaTe₂/MoS₂/Fe₃GaTe₂ spin-valve devices. The magnetoresistance (MR) of the device was up to 15.89% at 2.3 K and 11.97% at 10 K, which are 4-30 times the MR of the spin valves of Fe₃GeTe₂/MoS₂/Fe₃GeTe₂ and conventional NiFe/MoS₂/NiFe. The typical spin valve effect showed strong dependence on the MoS₂ spacer thickness in the vdW heterojunction. Importantly, the spin valve effect (0.31%) robustly existed even at 300 K with low working currents down to 10 nA (0.13 A cm^-2). This work provides a general vdW platform to develop room-temperature, 2D FM-crystal-based 2D spin-valve devices.

UV-VIS-NIR broadband flexible photodetector based on layered lead-free organic-inorganic hybrid perovskite

The flexible photodetector is viewed as a research hotspot for numerous advanced optoelectronic applications. Recent progress has manifested that lead-free layered organic-inorganic hybrid perovskites (OIHPs) are highly attractive to engineering flexible photodetectors due to the effective overlapping of several unique properties, including efficient optoelectronic characteristics, exceptional structural flexibility, and the absence of Pb toxicity to humans and the environment. The narrow spectral response of most flexible photodetectors with lead-free perovskites is still a big challenge to practical applications. In this work, we demonstrate the flexible photodetector based on a novel (to our knowledge) narrow-bandgap OIHP of (BA)₂(MA)Sn₂I₇, with achieving a broadband response across an ultraviolet-visible-near infrared (UV-VIS-NIR) region as 365-1064 nm. The high responsivities of 28.4 and 2.0 × 10^-2 A/W are obtained at 365 and 1064 nm, respectively, corresponding to detectives of 2.3 × 10¹⁰ and 1.8 × 10⁷ Jones. This device also shows remarkable photocurrent stability after 1000 bending cycles. Our work indicates the huge application prospect of Sn-based lead-free perovskites in high-performance and eco-friendly flexible devices.

Low symmetric sub-wavelength array enhanced lensless polarization-sensitivity photodetector of germanium selenium

Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and roughness-induced light polarization state variation, displace unique advantages in the fields of national security, medical diagnosis, and aerospace. The utilization of in-plane anisotropic two-dimensional (2D) materials has led the polarization photodetector into a polarizer-free regime, and facilitated the miniaturization of optoelectronic device integration. However, the insufficient polarization ratio (usually less than 10) restricts the detection resolution of polarized signals. Here, we designed a sub-wavelength array (SWA) structure of 2D germanium selenium (GeSe) to further improve its anisotropic sensitivity, which boosts the polarized photocurrent ratio from 1.6 to 18. This enhancement comes from the combination of nano-scale arrays with atomic-scale lattice arrangement at the low-symmetric direction, while the polarization-sensitive photoresponse along the high-symmetric direction is strongly suppressed due to the SWA-caused depolarization effect. Our mechanism study revealed that the SWA can improve the asymmetry of charge distribution, attenuate the matrix element in zigzag direction, and the localized surface plasma, which elevates the photo absorption and photoelectric transition probability along the armchair direction, therefore accounts for the enhanced polarization sensitivity. In addition, the photodetector based on GeSe SWA exhibited a broad power range of 40 dB at a near-infrared wavelength of 808 nm and the ability of weak-light detection under 0.1 LUX of white light (two orders of magnitude smaller than pristine 2D GeSe). This work provides a feasible guideline to improve the polarization sensitivity of 2D materials, and will greatly benefit the development of polarized imaging sensors.

Precisely Tailoring a FAPbI3-Derived Ferroelectric for Sensitive Self-Driven Broad-Spectrum Polarized Photodetection

Benefiting from superior semiconducting properties and the angle-dependence of the bulk photovoltaic effect (BPVE) on polarized light, the two-dimensional (2D) hybrid perovskite ferroelectrics are developed for sensitive self-powered polarized photodetection. Most of the currently reported ferroelectric-driven polarized photodetection is restricted to the shortwave optical response, and expanding the response range is urgently needed. Here we report the first instance of a FAPbI₃-derived (2D) perovskite ferroelectric, (BA)₂(FA)Pb₂I₇ (1, BA is n-butylammonium, FA is formamidinium). It exhibited a notably high thermostability and broad-spectrum adsorption extending to around 650 nm. Significantly, 1 demonstrated ferroelectricity-driven self-powered polarized photodetection under 637 nm with an anisotropic photocurrent ratio of ∼1.96, ultrahigh detectivity of 3.34 × 10¹² Jones, and long-term repetition. This research will shed light on the development of new ferroelectrics for potential application in broad-spectrum polarization-based optoelectronics.

Strong Anisotropic Two-Dimensional In2Se3 for Light Intensity and Polarization Dual-Mode High-Performance Detection

Detecting the light from different freedom is of great significance to gain more information. Two-dimensional (2D) materials with low intrinsic carrier concentration and highly tunable electronic structure have been considered as the promising candidate for future room-temperature multi-functional photodetectors. However, current investigations mainly focus on intensity-sensitive detection; the multi-dimensional photodetection such as polarization-sensitive photodetection is still in its early stage. Herein, the intensity- and polarization-sensitive photodetection based on α-In₂Se₃ is studied. By using angle-resolved polarized Raman spectroscopy, it is demonstrated that α-In₂Se₃ shows an anisotropic phonon vibration property indicating its asymmetric structure. The α-In₂Se₃-based photodetector has a photoelectric performance with a responsivity of 1936 A/W and a specific detectivity of 2.1 × 10¹³ Jones under 0.2 mW/cm² power density at 400 nm. Moreover, by studying the polarized angle-resolved photoelectrical effect, it is found that the ratio of maximum and minimum photocurrent (dichroic ratio) reaches 1.47 at 650 nm suggesting good polarization-sensitive detection. After post-annealing, α-In₂Se₃ in situ converts to β-In₂Se₃ which has similar in-plane anisotropic crystallinity and exhibits a dichroic ratio of 1.41. It is found that the responsivity of β-In₂Se₃ is 6 A/W, much lower than that of α-In₂Se₃. The high-performance light intensity- and polarization-detection of α-In₂Se₃ enlarges the 2D anisotropic materials family and provides new opportunities for future dual-mode photodetection.

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure

Interface interactions in 2D vertically stacked heterostructures play an important role in optoelectronic applications, and photodetectors based on graphene/InSe heterostructures show promising performance nowadays. However, nonlinear optical property studies based on the graphene/InSe heterostructure are insufficient. Here, we fabricated a graphene/InSe heterostructure by mechanical exfoliation and investigated the optically induced charge transfer between graphene/InSe heterostructures by taking photoluminescence and pump-probe measurements. The large built-in electric field at the interface was confirmed by Kelvin probe force microscopy. Furthermore, due to the efficient interfacial carrier transfer driven by the built-in electric potential (~286 meV) and broadband nonlinear absorption, the application of the graphene/InSe heterostructure in a mode-locked laser was realized. Our work not only provides a deeper understanding of the dipole orientation-related interface interactions on the photoexcited charge transfer of graphene/InSe heterostructures, but also enriches the saturable absorber family for ultrafast photonics application.

Individually tunable array reflector for amplitude and phase modulation

Based on graphene's phase modulation property and vanadium dioxide's amplitude modulation property, we developed an array reflector for terahertz frequencies that is individually adjustable. Starting with a theoretical analysis, we look into the effects of voltage on the Fermi level of graphene and temperature on the conductivity of vanadium dioxide, analyze the beam focusing characteristics, and finally link the controllable quantities with the reflected beam characteristics to independently regulate each cell in the array. The simulation findings demonstrate that the suggested array structure can precisely manage the focus point's position, intensity, and scattering degree and that, with phase compensation, it can control the wide-angle incident light. The array structure offers a novel concept for adjustable devices and focusing lenses, which has excellent potential for study and application.

MOF-Derived In2O3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors

Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In₂O₃)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In₂O₃-based PEC UV PDs for the first time. In₂O₃ microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In₂O₃ MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 10¹⁰ Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In₂O₃ MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In₂O₃ holds great promise in high-performance PEC UV PDs.

Sb2S3/Sb2Se3 heterojunction for high-performance photodetection and hydrogen production

Photoelectrochemical (PEC)-type devices provide promising ways for harvesting solar energy and converting it to electric and chemical energy with a low-cost and simple manufacturing process. However, the high light absorption, fast carrier separation, and low carrier recombination are still great challenges in reaching high performance for PEC devices. As emergent two-dimensional (2D) materials, Sb₂Se₃ and Sb₂S₃ exhibit desirable photoelectric properties due to the narrow bandgap, large optical absorption, and high carrier mobility. Herein, Sb₂S₃/Sb₂Se₃ heterojunction is synthesized by a two-step physical vapor deposition method. The type-II Sb₂S₃/Sb₂Se₃ heterojunction displays excellentphotoelectric properties such as a high photocurrent density (I_ph ∼ 162 µA cm^-2), a high photoresponsivity (R_ph ∼ 3700 µA W^-1), and a fast time response speed (rising time ∼ 2 ms and falling time ∼ 4.5 ms) even in harsh environment (H₂SO₄ electrolyte). Especially, the Sb₂S₃/Sb₂Se₃ shows an excellent self-powered photoresponse (I_ph ∼ 40 µA cm^-2, R_ph ∼ 850 µA W^-1). This increment is attributed to the improvement in light absorption, charge separation, and charge transfer efficiency. Taking these advantages, the Sb₂S₃/Sb₂Se₃ heterojunction also exhibits higher PEC water splitting synergically, which is approximately 3 times larger than that of Sb₂Se₃ and Sb₂S₃. These results pave the way for high-performance PEC devices by integrating 2D narrow bandgap semiconductors.

Ultralow Power Wearable Organic Ferroelectric Device for Optoelectronic Neuromorphic Computing

In order to imitate brain-inspired biological information processing systems, various neuromorphic computing devices have been proposed, most of which were prepared on rigid substrates and have energy consumption levels several orders of magnitude higher than those of biological synapses (∼10 fJ per spike). Herein, a new type of wearable organic ferroelectric artificial synapse is proposed, which has two modulation modes (optical and electrical modulation). Because of the high photosensitivity of organic semiconductors and the ultrafast polarization switching of ferroelectric materials, the synaptic device has an ultrafast operation speed of 30 ns and an ultralow power consumption of 0.0675 aJ per synaptic event. Under combined photoelectric modulation, the artificial synapse realizes associative learning. The proposed artificial synapse with ultralow power consumption demonstrates good synaptic plasticity under different bending strains. This provides new avenues for the construction of ultralow power artificial intelligence system and the development of future wearable devices.

Ultrafast photoresponse of vertically oriented TMD films probed in a vertical electrode configuration on Si chips

Integrated photodetectors based on transition metal dichalcogenides (TMDs) face the challenge of growing their high-quality crystals directly on chips or transferring them to the desired locations of components by applying multi-step processes. Herein, we show that vertically oriented polycrystalline thin films of MoS₂ and WS₂ grown by sulfurization of Mo and W sputtered on highly doped Si are robust solutions to achieve on-chip photodetectors with a sensitivity of up to 1 mA W^-1 and an ultrafast response time in the sub-μs regime by simply probing the device in a vertical arrangement, i.e., parallel to the basal planes of TMDs. These results are two orders of magnitude better than those measured earlier in lateral probing setups having both electrodes on top of vertically aligned polycrystalline TMD films. Accordingly, our study suggests that easy-to-grow vertically oriented polycrystalline thin film structures may be viable components in fast photodetectors as well as in imaging, sensing and telecommunication devices.

Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.

Assembly of bimetallic (Au-Ag)FON composite films at liquid/solid interfaces and their tunable optical properties

The regular structure provided by two-dimensional (2D) structural colloidal crystals is widely accepted to provide an ideal template that ensures that plasmonic bimetallic composite nanostructures are uniform. Herein, we report an effective method for fabricating bimetallic Au-Ag composite films loaded on the surfaces of 2D polystyrene@polyacrylic acid (PS@PAA) colloidal crystals. PS@PAA particles coated with uniform Ag particle layers (AgFON) were produced by a simple and effective sputtering-deposition technique, after which the galvanic replacement (GR) reaction was used to produce a bimetallic (Au-Ag)FON composite film at the liquid/solid interface in aqueous HAuCl₄. The morphology and relative contents of the bimetallic (Au-Ag)FON composite film can be regulated by changing the kinetic factors that control the GR reaction, including the concentration and pH of the HAuCl₄ solution, and the reaction time. We demonstrated that the fabricated bimetallic (Au-Ag)FON composite has localized surface plasmon resonance (LSPR) properties that can be regulated by varying the composite structure and Ag/Au composition. On the one hand, the regular 2D colloidal crystal structure provides an ideal template for preparing Au-Ag composite films, which ensures that the optical signals of plasmonic Au-Ag composite films are reproducible. On the other hand, the synergy between Ag and Au in the bimetallic alloy composite film ensures stable and tunable LSPR performance. Furthermore, the prepared 2D ordered (Au-Ag)FON Au-Ag bimetallic material is expected to be used in sensing and catalysis applications.

Synthesis of photoresponsive and photoemissive ultrathin 2D nanosheets of In2S3 achieved through a new single source molecular precursor

Indium sulfide, a two-dimensional semiconductor material, has emerged as a promising candidate for cost-effective and sustainable solar cells. This report deals with the facile preparation of colloidal In₂S₃ with a new ultrathin nanosheet (NS) morphology. The synthesis was mediated through a new structurally characterized single source molecular precursor. The crystal structure, phase purity, and morphology of the NSs were thoroughly investigated by pXRD, Raman, XPS, and electron microscopic techniques. AFM studies revealed that the NSs have an average thickness of ∼1.76 nm. The optical studies confirm quantum confinement in the as-prepared NSs with a blue shift in the direct band gap, which lies in the optimal range suitable for solar cell application. Furthermore, photoluminescence studies indicate strong emission by these NSs in the blue region. The as-synthesized In₂S₃ NSs-based prototype photoelectrochemical cell exhibit high photostability and photoresponsivity, which make them suitable candidates for sustainable solar cells.

Quantum confined ultrathin nanosheets of In₂S₃ were synthesized from a new structurally characterized molecular precursor. The prototype photoelectrochemical cell based on the material exhibited high photostability and photoresponsivity.