1
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Carey B, Wessling NK, Steeger P, Schmidt R, Michaelis de Vasconcellos S, Bratschitsch R, Arora A. Giant Faraday rotation in atomically thin semiconductors. Nat Commun 2024; 15:3082. [PMID: 38600090 PMCID: PMC11006678 DOI: 10.1038/s41467-024-47294-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2023] [Accepted: 03/21/2024] [Indexed: 04/12/2024] Open
Abstract
Faraday rotation is a fundamental effect in the magneto-optical response of solids, liquids and gases. Materials with a large Verdet constant find applications in optical modulators, sensors and non-reciprocal devices, such as optical isolators. Here, we demonstrate that the plane of polarization of light exhibits a giant Faraday rotation of several degrees around the A exciton transition in hBN-encapsulated monolayers of WSe2 and MoSe2 under moderate magnetic fields. This results in the highest known Verdet constant of -1.9 × 107 deg T-1 cm-1 for any material in the visible regime. Additionally, interlayer excitons in hBN-encapsulated bilayer MoS2 exhibit a large Verdet constant (VIL ≈ +2 × 105 deg T-1 cm-2) of opposite sign compared to A excitons in monolayers. The giant Faraday rotation is due to the giant oscillator strength and high g-factor of the excitons in atomically thin semiconducting transition metal dichalcogenides. We deduce the complete in-plane complex dielectric tensor of hBN-encapsulated WSe2 and MoSe2 monolayers, which is vital for the prediction of Kerr, Faraday and magneto-circular dichroism spectra of 2D heterostructures. Our results pose a crucial advance in the potential usage of two-dimensional materials in ultrathin optical polarization devices.
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Affiliation(s)
- Benjamin Carey
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany
- School of Mathematics and Physics, The University of Queensland, St Lucia, QLD, Australia
| | - Nils Kolja Wessling
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany
- Institute of Photonics, Department of Physics, University of Strathclyde, 99 George Street, Glasgow, UK
| | - Paul Steeger
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany
| | - Robert Schmidt
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany
| | | | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany.
| | - Ashish Arora
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany.
- Department of Physics, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra, India.
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2
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Lu B, Xia Y, Ren Y, Xie M, Zhou L, Vinai G, Morton SA, Wee ATS, van der Wiel WG, Zhang W, Wong PKJ. When Machine Learning Meets 2D Materials: A Review. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305277. [PMID: 38279508 PMCID: PMC10987159 DOI: 10.1002/advs.202305277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 10/21/2023] [Indexed: 01/28/2024]
Abstract
The availability of an ever-expanding portfolio of 2D materials with rich internal degrees of freedom (spin, excitonic, valley, sublattice, and layer pseudospin) together with the unique ability to tailor heterostructures made layer by layer in a precisely chosen stacking sequence and relative crystallographic alignments, offers an unprecedented platform for realizing materials by design. However, the breadth of multi-dimensional parameter space and massive data sets involved is emblematic of complex, resource-intensive experimentation, which not only challenges the current state of the art but also renders exhaustive sampling untenable. To this end, machine learning, a very powerful data-driven approach and subset of artificial intelligence, is a potential game-changer, enabling a cheaper - yet more efficient - alternative to traditional computational strategies. It is also a new paradigm for autonomous experimentation for accelerated discovery and machine-assisted design of functional 2D materials and heterostructures. Here, the study reviews the recent progress and challenges of such endeavors, and highlight various emerging opportunities in this frontier research area.
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Affiliation(s)
- Bin Lu
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Yuze Xia
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Yuqian Ren
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Miaomiao Xie
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Liguo Zhou
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Giovanni Vinai
- Instituto Officina dei Materiali (IOM)‐CNRLaboratorio TASCTriesteI‐34149Italy
| | - Simon A. Morton
- Advanced Light Source (ALS)Lawrence Berkeley National LaboratoryBerkeleyCA94720USA
| | - Andrew T. S. Wee
- Department of Physics and Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC)National University of SingaporeSingapore117542Singapore
| | - Wilfred G. van der Wiel
- NanoElectronics Group, MESA+ Institute for Nanotechnology and BRAINS Center for Brain‐Inspired Nano SystemsUniversity of TwenteEnschede7500AEThe Netherlands
- Institute of PhysicsUniversity of Münster48149MünsterGermany
| | - Wen Zhang
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
- NanoElectronics Group, MESA+ Institute for Nanotechnology and BRAINS Center for Brain‐Inspired Nano SystemsUniversity of TwenteEnschede7500AEThe Netherlands
| | - Ping Kwan Johnny Wong
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
- NPU Chongqing Technology Innovation CenterChongqing400000P. R. China
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3
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Chen X, Zhang X, Xiang G. Recent advances in two-dimensional intrinsic ferromagnetic materials Fe 3X( X=Ge and Ga)Te 2 and their heterostructures for spintronics. NANOSCALE 2024; 16:527-554. [PMID: 38063022 DOI: 10.1039/d3nr04977a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Owing to their atomic thicknesses, atomically flat surfaces, long-range spin textures and captivating physical properties, two-dimensional (2D) magnetic materials, along with their van der Waals heterostructures (vdWHs), have attracted much interest for the development of next-generation spin-based materials and devices. As an emergent family of intrinsic ferromagnetic materials, Fe3X(X=Ge and Ga)Te2 has become a rising star in the fields of condensed matter physics and materials science owing to their high Curie temperature and large perpendicular magnetic anisotropy. Herein, we aim to comprehensively summarize the recent progress on 2D Fe3X(X=Ge and Ga)Te2 and their vdWHs and provide a panorama of their physical properties and underlying mechanisms. First, an overview of Fe3X(X=Ge and Ga)Te2 is presented in terms of crystalline and electronic structures, distinctive physical properties and preparation methods. Subsequently, the engineering of electronic and spintronic properties of Fe3X(X=Ge and Ga)Te2 by diverse means, including strain, gate voltage, substrate and patterning, is surveyed. Then, the latest advances in spintronic devices based on 2D Fe3X(X=Ge and Ga)Te2 vdWHs are discussed and elucidated in detail, including vdWH devices that exploit the exchange bias effect, magnetoresistance effect, spin-orbit torque effect, magnetic proximity effect and Dzyaloshinskii-Moriya interaction. Finally, the future outlook is given in terms of efficient large-scale fabrication, intriguing physics and important technological applications of 2D Fe3X(X=Ge and Ga)Te2 and their vdWHs. Overall, this study provides an overview to support further studies of emergent 2D Fe3X(X=Ge and Ga)Te2 materials and related vdWH devices for basic science and practical applications.
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Affiliation(s)
- Xia Chen
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Xi Zhang
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Gang Xiang
- College of Physics, Sichuan University, Chengdu 610064, China.
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Xie J, Wu D, Liao Y, Cao X, Zhou S. Charge doping and electric field tunable ferromagnetism and Curie temperature of the MnS 2 monolayer. Phys Chem Chem Phys 2023; 26:267-277. [PMID: 38059372 DOI: 10.1039/d3cp04382g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Two-dimensional ferromagnets with a long-range ferromagnetic ordering at finite temperature present a bright prospect for their potential applications in nanoscale spintronic devices. The tuning of their intrinsic ferromagnetism and Curie temperature is essential for the development of next-generation data storage and spintronic devices. In this work, the electronic structures, ferromagnetism and Curie temperature of two-dimensional MnS2 monolayer are controlled by charge doping and electric field using first principles calculations. The results show that the dynamic and thermal stability of monolayer MnS2 for all of the cases can be still maintained. Moreover, there is no existence of phase transition and all MnS2 monolayers at any charge doping concentrations and electric field intensities favor ferromagnetic coupling. For the manipulation of electron doping, the calculated total magnetic moment Mtot of the MnS2 monolayer exhibits an increase from 3.112 to 3.491μB per unit cell. Further analysis indicates that a transition from half-metal to metal occurs by introducing the charge doping and vertical electric field, and the Mn 3d electronic states are the major determinants of ferromagnetism. Additionally, the charge doping enables the magnetic anisotropy energy to transform from an in-plane easy axis to the magnetization direction out of the plane. The Curie temperature Tc of the MnS2 monolayer can be moderately enhanced above room temperature by hole doping and application of a vertical electric field. Remarkably, Tc reaches its peak at 767 K at a hole doping concentration of -0.8e. This work enriches the microscopic understanding of the tuning mechanism of ferromagnetism and supplies a sound theoretical basis for subsequent experimental studies.
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Affiliation(s)
- Jing Xie
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Dongni Wu
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Yangfang Liao
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Xiaolong Cao
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Shiyou Zhou
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
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Ren H, Lan M. Progress and Prospects in Metallic Fe xGeTe 2 (3 ≤ x ≤ 7) Ferromagnets. Molecules 2023; 28:7244. [PMID: 37959664 PMCID: PMC10649090 DOI: 10.3390/molecules28217244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 10/05/2023] [Accepted: 10/21/2023] [Indexed: 11/15/2023] Open
Abstract
Thermal fluctuations in two-dimensional (2D) isotropy systems at non-zero finite temperatures can destroy the long-range (LR) magnetic order due to the mechanisms addressed in the Mermin-Wanger theory. However, the magnetic anisotropy related to spin-orbit coupling (SOC) may stabilize magnetic order in 2D systems. Very recently, 2D FexGeTe2 (3 ≤ x ≤ 7) with a high Curie temperature (TC) has not only undergone significant developments in terms of synthetic methods and the control of ferromagnetism (FM), but is also being actively explored for applications in various devices. In this review, we introduce six experimental methods, ten ferromagnetic modulation strategies, and four spintronic devices for 2D FexGeTe2 materials. In summary, we outline the challenges and potential research directions in this field.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Liaocheng 252000, China
| | - Mu Lan
- College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu 610225, China
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6
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Liu P, Zhang Y, Li K, Li Y, Pu Y. Recent advances in 2D van der Waals magnets: Detection, modulation, and applications. iScience 2023; 26:107584. [PMID: 37664598 PMCID: PMC10470320 DOI: 10.1016/j.isci.2023.107584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/05/2023] Open
Abstract
The emergence of two-dimensional (2D) van der Waals magnets provides an exciting platform for exploring magnetism in the monolayer limit. Exotic quantum phenomena and significant potential for spintronic applications are demonstrated in 2D magnetic crystals and heterostructures, which offer unprecedented possibilities in advanced formation technology with low power and high efficiency. In this review, we summarize recent advances in 2D van der Waals magnetic crystals. We focus mainly on van der Waals materials of truly 2D nature with intrinsic magnetism. The detection methods of 2D magnetic materials are first introduced in detail. Subsequently, the effective strategies to modulate the magnetic behavior of 2D magnets (e.g., Curie temperature, magnetic anisotropy, magnetic exchange interaction) are presented. Then, we list the applications of 2D magnets in the spintronic devices. We also highlight current challenges and broad space for the development of 2D magnets in further studies.
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Affiliation(s)
- Ping Liu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Ying Zhang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
| | - Kehan Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yongde Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yong Pu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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7
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Carey B, Wessling NK, Steeger P, Klusmann C, Schneider R, Fix M, Schmidt R, Albrecht M, Michaelis de Vasconcellos S, Bratschitsch R, Arora A. High-Performance Broadband Faraday Rotation Spectroscopy of 2D Materials and Thin Magnetic Films. SMALL METHODS 2022; 6:e2200885. [PMID: 36228108 DOI: 10.1002/smtd.202200885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Revised: 09/21/2022] [Indexed: 06/16/2023]
Abstract
A Faraday rotation spectroscopy (FRS) technique is presented for measurements on the micrometer scale. Spectral acquisition speeds of about two orders of magnitude faster than state-of-the-art modulation spectroscopy setups are demonstrated. The experimental method is based on charge-coupled-device detection, avoiding speed-limiting components, such as polarization modulators with lock-in amplifiers. At the same time, FRS spectra are obtained with a sensitivity of 20 µrad ( 0.001 ° \[0.001{\bm{^\circ }}\] ) over a broad spectral range (525-800 nm), which is on par with state-of-the-art polarization-modulation techniques. The new measurement and analysis technique also automatically cancels unwanted Faraday rotation backgrounds. Using the setup, Faraday rotation spectroscopy of excitons is performed in a hexagonal boron nitride-encapsulated atomically thin semiconductor WS2 under magnetic fields of up to 1.4 T at room temperature and liquid helium temperature. An exciton g-factor of -4.4 ± 0.3 is determined at room temperature, and -4.2 ± 0.2 at liquid helium temperature. In addition, FRS and hysteresis loop measurements are performed on a 20 nm thick film of an amorphous magnetic Tb20 Fe80 alloy.
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Affiliation(s)
- Benjamin Carey
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany
- School of Mathematics and Physics, The University of Queensland, Saint Lucia, QLD, 4072, Australia
| | - Nils Kolja Wessling
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany
- Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, G1 1RD, UK
| | - Paul Steeger
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany
| | - Christoph Klusmann
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany
| | - Robert Schneider
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany
| | - Mario Fix
- Institute of Physics, University of Augsburg, 86159, Augsburg, Germany
| | - Robert Schmidt
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany
| | - Manfred Albrecht
- Institute of Physics, University of Augsburg, 86159, Augsburg, Germany
| | | | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany
| | - Ashish Arora
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany
- Department of Physics, Indian Institute of Science Education and Research, Pune, 411008, India
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Dai H, Cai M, Hao Q, Liu Q, Xing Y, Chen H, Chen X, Wang X, Fu HH, Han J. Nonlocal Manipulation of Magnetism in an Itinerant Two-Dimensional Ferromagnet. ACS NANO 2022; 16:12437-12444. [PMID: 35900014 DOI: 10.1021/acsnano.2c03626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) magnets are crucial in the construction of 2D magnetic and spintronic devices. Many devices, including spin valves and multiple tunneling junctions, have been developed by vertically stacking 2D magnets with other functional blocks. However, owing to limited local interactions at the interfaces, the device structures are typically extremely complex. To solve this problem, the nonlocal manipulation of magnetism may be a good solution. In this study, we use the magneto-optical Kerr effect technique to demonstrate the nonlocal manipulation of magnetism in an itinerant 2D ferromagnet, Fe3GeTe2 (FGT), whose magnetism can be manipulated via an antiferromagnet/ferromagnet interface or a current-induced spin-orbital torque placed distant from the local site. It is discovered that the coupling of a small piece of MnPS3 (∼40 μm2) with FGT can significantly enhance the coercive field and emergence of exchange bias in the entire FGT flake (∼2000 μm2). Moreover, FGT flakes with different thicknesses have the same coercive field at low temperatures if they are coupled together. Our study provides an understanding of the basic magnetism of 2D itinerant ferromagnets as well as opportunities for engineering magnetism with an additional degree of freedom.
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Affiliation(s)
- Hongwei Dai
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Menghao Cai
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qinghua Hao
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qingbo Liu
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuntong Xing
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hongjing Chen
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaodie Chen
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xia Wang
- School of Elementary Education, Wuhan City Polytechnic College, Wuhan, 430070, China
| | - Hua-Hua Fu
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Junbo Han
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
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Zhu W, Song C, Wang Q, Bai H, Yin S, Pan F. Anomalous displacement reaction for synthesizing above-room-temperature and air-stable vdW ferromagnet PtTe 2Ge 1/3. Natl Sci Rev 2022; 10:nwac173. [PMID: 36684515 PMCID: PMC9843128 DOI: 10.1093/nsr/nwac173] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Accepted: 08/10/2022] [Indexed: 01/25/2023] Open
Abstract
Emerging van der Waals (vdW) magnets provide a paradise for the exploration of magnetism in the ultimate two-dimensional (2D) limit, and the construction of integrated spintronic devices, and have become a research frontier in the field of low-dimensional materials. To date, prototypical vdW magnets based on metals of the first transition series (e.g. V, Cr, Mn and Fe) and chalcogen elements suffer from rapid oxidation restricted by the Hard-Soft-Acid-Base principle, as well as low Curie temperatures (T C), which has become a generally admitted challenge in 2D spintronics. Here, starting from air-unstable Cr2Ge2Te6 vdW thin flakes, we synthesize Ge-embedded PtTe2 (namely PtTe2Ge1/3) with superior air stability, through the displacement reaction in the Cr2Ge2Te6/Pt bilayer. In this process, the anomalous substitution of Cr with Pt in the thermal diffusion is inverse to the metal activity order, which can be attributed to the compatibility between soft-acid (Pt) and soft-base (Te) elements. Meanwhile, the layered uniform insertion of Ge unbalances Pt-Te bonds and introduces long-range ordered ferromagnetism with perpendicular magnetic anisotropy and a Curie temperature above room temperature. Our work demonstrates the anti-metal-activity-order reaction tendency unique in 2D transition-metal magnets and boosts progress towards practical 2D spintronics.
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Affiliation(s)
- Wenxuan Zhu
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | | | - Qian Wang
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | - Hua Bai
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | - Siqi Yin
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
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10
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Li G, Ma S, Li Z, Zhang Y, Diao J, Xia L, Zhang Z, Huang Y. High-Quality Ferromagnet Fe 3GeTe 2 for High-Efficiency Electromagnetic Wave Absorption and Shielding with Wideband Radar Cross Section Reduction. ACS NANO 2022; 16:7861-7879. [PMID: 35467351 DOI: 10.1021/acsnano.2c00512] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A high-quality Fe3GeTe2 single crystal with good electrical, magnetic, and electromagnetic wave absorption and shielding properties was prepared in a large quantity (10 g level) by solid-phase sintering and recrystallization method, which would promote its in-depth research and practical application. It has good room-temperature electrical properties with a mobility of 42 cm2/V·s, a sheet (bulk) carrier concentration of +1.64 × 1018 /cm2 (+3.28 × 1020 /cm3), and a conductivity of 2196.35 S/cm. Also, a Curie temperature of 238 K indicates the high magnetic transition temperature and a paramagnetic Curie temperature of 301 K shows the large ferromagnetic-paramagnetic transition zone induced by the residual short-range ferromagnetic domains. Particularly, Fe3GeTe2 is in a loosely packed state when used as a loss agent; the electromagnetic wave absorption with a reflection loss of -34.7 dB at 3.66 GHz under thin thickness was shown. Meanwhile, the absorption band can be effectively regulated by varying the thickness. Moreover, Fe3GeTe2 in a close-packed state exhibits terahertz shielding values of 75.1 and 103.2 dB at very thin thicknesses of 70 and 380 μm, and the average shielding value is higher than 47 dB, covering the entire bandwidth from 0.1 to 3.0 THz. Furthermore, by using Fe3GeTe2 as a patch, the wideband radar cross-section can be effectively reduced by up to 33 dBsm. Resultantly, Fe3GeTe2 will be a promising candidate in the electromagnetic protection field.
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Affiliation(s)
- Guanghao Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Suping Ma
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Zhuo Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Yawen Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Jianglin Diao
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Lun Xia
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Zhiwei Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Yi Huang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
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11
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Pei K, Liu S, Yang L, Zhang E, Zhang R, Yang C, Ai L, Li Z, Xiu F, Che R. Controllable Domain Walls in Two-Dimensional Ferromagnetic Material Fe 3GeTe 2 Based on the Spin-Transfer Torque Effect. ACS NANO 2021; 15:19513-19521. [PMID: 34894654 DOI: 10.1021/acsnano.1c06361] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recently, two-dimensional magnetic material has attracted attention worldwide due to its potential application in magnetic memory devices. The previous concept of domain walls driven by current pulses is a disordered motion. Further investigation of the mechanism is urgently lacking. Here, Fe3GeTe2, a typical high-Curie temperature (TC) two-dimensional magnetic material, is chosen to explore the magnetic domain dynamics by in situ Lorentz transmission electron microscopy experiments. It has been found that the stripe domain could be driven, compressed, and expanded by the pulses with a critical current density. Revealed by micromagnetic simulations, all the domain walls cannot move synchronously due to the competition between demagnetization energy and spin-transfer torque effect. In consideration of the reflection of high-frequency pulses, the disordered motion could be well explained together. The multiple stable states of the magnetic structure due to the weak exchange interaction in a two-dimensional magnet provides complex dynamic processes. Based on plenty of experiments, a cluster of domain walls could be more steady and move more synchronously under the drive of pulse current. The complication of domain wall motions presents a challenge in race track memory devices and two-dimensional magnetic material will be a better choice for application research.
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Affiliation(s)
- Ke Pei
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Liting Yang
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Ruixuan Zhang
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
| | - Chendi Yang
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Renchao Che
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
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12
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Li W, Zeng Y, Zhao Z, Zhang B, Xu J, Huang X, Hou Y. 2D Magnetic Heterostructures and Their Interface Modulated Magnetism. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50591-50601. [PMID: 34674524 DOI: 10.1021/acsami.1c11132] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
In recent years, two-dimensional (2D) magnetic heterostructures have captured widespread interest as they provide a fertile ground for exploring the novel properties induced by interfacial magnetic coupling, modulating the intrinsic magnetism of the 2D magnet, and exploiting new spintronic device applications. In this Spotlight on Applications, dominating synthetic strategies employed to fabricate 2D magnetic heterostructures are introduced first. Notably, we then concentrate on two different kinds of magnetic interfaces, namely, the magnetic-nonmagnetic interface and the magnetic-magnetic interface. Specifically, various interface modulated magnetisms such as valley splitting and the anomalous Hall effect as well as their related device applications such as magnetic tunnel junctions have been further reviewed and discussed. Finally, we briefly summarize the recent progress of 2D magnetic heterostructures and outline the future development direction of this booming field.
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Affiliation(s)
- Wei Li
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yi Zeng
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zijing Zhao
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Biao Zhang
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Junjie Xu
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxiao Huang
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yanglong Hou
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
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13
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Liu S, Li Z, Yang K, Zhang E, Narayan A, Zhang X, Zhu J, Liu W, Liao Z, Kudo M, Toriyama T, Yang Y, Li Q, Ai L, Huang C, Sun J, Guo X, Bao W, Deng Q, Chen Y, Yin L, Shen J, Han X, Matsumura S, Zou J, Xu Y, Xu X, Wu H, Xiu F. Tuning 2D magnetism in Fe3+XGeTe2 films by element doping. Natl Sci Rev 2021; 9:nwab117. [PMID: 35822066 PMCID: PMC9270067 DOI: 10.1093/nsr/nwab117] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2020] [Revised: 02/24/2021] [Accepted: 06/10/2021] [Indexed: 11/23/2022] Open
Abstract
Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (TC) or phase transitions. One of the challenges, however, is the realization of high TC 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe3+XGeTe2 films with TC above room temperature. By controlling the Fe composition in Fe3+XGeTe2, a continuously modulated TC in a broad range of 185–320 K has been achieved. This widely tunable TC is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe3+XGeTe2 fashion.
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Affiliation(s)
- Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Ke Yang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Laboratory for Computational Physical Sciences (MOE), Fudan University, Shanghai 200433, China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| | - Xiaoqian Zhang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Jiayi Zhu
- Department of Physics, University of Washington, Seattle, WA 98195-1560, USA
| | - Wenqing Liu
- Department of Electronic Engineering, Royal Holloway University of London, Egham TW20 0EX, UK
| | - Zhiming Liao
- Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Masaki Kudo
- The Ultramicroscopy Research Center, Kyushu University, Fukuoka 819-0395, Japan
| | - Takaaki Toriyama
- The Ultramicroscopy Research Center, Kyushu University, Fukuoka 819-0395, Japan
| | - Yunkun Yang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Qiang Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Ce Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jiabao Sun
- Department of Electronic Engineering, Royal Holloway University of London, Egham TW20 0EX, UK
| | - Xiaojiao Guo
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Qingsong Deng
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Yanhui Chen
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Lifeng Yin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Xiaodong Han
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Syo Matsumura
- The Ultramicroscopy Research Center, Kyushu University, Fukuoka 819-0395, Japan
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
| | - Jin Zou
- Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia
- Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072, Australia
| | - Yongbing Xu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA 98195-1560, USA
| | - Hua Wu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Laboratory for Computational Physical Sciences (MOE), Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
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14
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Gottscholl A, Diez M, Soltamov V, Kasper C, Sperlich A, Kianinia M, Bradac C, Aharonovich I, Dyakonov V. Room temperature coherent control of spin defects in hexagonal boron nitride. SCIENCE ADVANCES 2021; 7:eabf3630. [PMID: 33811078 PMCID: PMC11059373 DOI: 10.1126/sciadv.abf3630] [Citation(s) in RCA: 54] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2020] [Accepted: 02/12/2021] [Indexed: 05/25/2023]
Abstract
Optically active spin defects are promising candidates for solid-state quantum information and sensing applications. To use these defects in quantum applications coherent manipulation of their spin state is required. Here, we realize coherent control of ensembles of boron vacancy centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure a spin-lattice relaxation time of 18 microseconds and a spin coherence time of 2 microseconds at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. By applying a method to decouple the spin state from its inhomogeneous nuclear environment the optically detected magnetic resonance linewidth is substantially reduced to several tens of kilohertz. Our results are important for the employment of van der Waals materials for quantum technologies, specifically in the context of high resolution quantum sensing of two-dimensional heterostructures, nanoscale devices, and emerging atomically thin magnets.
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Affiliation(s)
- Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Matthias Diez
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Victor Soltamov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Christian Kasper
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Carlo Bradac
- Department of Physics and Astronomy, Trent University, 1600 West Bank Dr., Peterborough, ON K9J 0G2, Canada
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany.
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15
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Liu B, Liu S, Yang L, Chen Z, Zhang E, Li Z, Wu J, Ruan X, Xiu F, Liu W, He L, Zhang R, Xu Y. Light-Tunable Ferromagnetism in Atomically Thin Fe_{3}GeTe_{2} Driven by Femtosecond Laser Pulse. PHYSICAL REVIEW LETTERS 2020; 125:267205. [PMID: 33449751 DOI: 10.1103/physrevlett.125.267205] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Revised: 09/03/2020] [Accepted: 12/11/2020] [Indexed: 05/16/2023]
Abstract
The recent discovery of intrinsic ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has opened up a new arena for spintronics, raising an opportunity of achieving tunable intrinsic 2D vdW magnetism. Here, we show that the magnetization and the magnetic anisotropy energy (MAE) of few-layered Fe_{3}GeTe_{2} (FGT) is strongly modulated by a femtosecond laser pulse. Upon increasing the femtosecond laser excitation intensity, the saturation magnetization increases in an approximately linear way and the coercivity determined by the MAE decreases monotonically, showing unambiguously the effect of the laser pulse on magnetic ordering. This effect observed at room temperature reveals the emergence of light-driven room-temperature (300 K) ferromagnetism in 2D vdW FGT, as its intrinsic Curie temperature T_{C} is ∼200 K. The light-tunable ferromagnetism is attributed to the changes in the electronic structure due to the optical doping effect. Our findings pave a novel way to optically tune 2D vdW magnetism and enhance the T_{C} up to room temperature, promoting spintronic applications at or above room temperature.
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Affiliation(s)
- Bo Liu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Long Yang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zhendong Chen
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Wu
- York-Nanjing Joint Center in Spintronics, Department of Electronic Engineering and Department of Physics, The University of York, York YO10 5DD, United Kingdom
| | - Xuezhong Ruan
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Wenqing Liu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
- Department of Electronic Engineering, Royal Holloway University of London, Egham, Surrey TW20 0EX, United Kingdom
| | - Liang He
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Rong Zhang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yongbing Xu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
- York-Nanjing Joint Center in Spintronics, Department of Electronic Engineering and Department of Physics, The University of York, York YO10 5DD, United Kingdom
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