Magnetic Bloch states at integer flux quanta induced by super-moiré potential in graphene aligned with twisted boron nitride

Two-dimensional electron systems in both magnetic fields and periodic potentials are described by the Hofstadter butterfly, a fundamental problem of solid-state physics. While moiré systems provide a powerful method to realize this type of spectrum, previous experiments have been limited to fractional flux quanta regime, due to the difficulty of building ~ 50 nm periodic modulations. Here, we demonstrate a super-moiré strategy to overcome this challenge. By aligning monolayer graphene (G) with 1.0° twisted hexagonal boron nitride (t-hBN), a 63.2 nm bichromatic G/t-hBN super-moiré is constructed, made possible by exploiting the electrostatic nature of t-hBN potential. Under magnetic field B , magnetic Bloch states at ϕ / ϕ 0 = 1 - 9 are achieved and observed as integer Brown-Zak oscillations, expanding the flux quanta from fractions to integers. Theoretical analysis reproduces these experimental findings. This work opens promising avenues to study unexplored Hofstadter butterfly, explore emergent topological order at integer flux quanta and engineer long-wavelength periodic modulations.

Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene

In Bernal-stacked bilayer graphene (BBG), the Landau levels give rise to an intimate connection between valley and layer degrees of freedom. Adding a moiré superlattice potential enriches the BBG physics with the formation of topological minibands - potentially leading to tunable exotic quantum transport. Here, we present magnetotransport measurements of a high-quality bilayer graphene-hexagonal boron nitride (hBN) heterostructure. The zero-degree alignment generates a strong moiré superlattice potential for the electrons in BBG and the resulting Landau fan diagram of longitudinal and Hall resistance displays a Hofstadter butterfly pattern with a high level of detail. We demonstrate that the intricate relationship between valley and layer degrees of freedom controls the topology of moiré-induced bands, significantly influencing the energetics of interacting quantum phases in the BBG superlattice. We further observe signatures of field-induced correlated insulators, helical edge states and clear quantizations of interaction-driven topological quantum phases, such as symmetry broken Chern insulators.

Higher order gaps in the renormalized band structure of doubly aligned hBN/bilayer graphene moiré superlattice

This paper presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. Using two interfering moiré potentials, we generate a supermoiré pattern that renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we use electronic transport measurements to identify the position of these gaps as a function of the carrier density. We establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained using the continuum model. Our study provides strong evidence of the quantization of the momentum-space area of quasi-Brillouin zones in a minimally incommensurate lattice. It fills important gaps in the understanding of band structure engineering of Dirac fermions with a doubly periodic superlattice spinor potential.

Kagome Quantum Oscillations in Graphene Superlattices

Electronic spectra of solids subjected to a magnetic field are often discussed in terms of Landau levels and Hofstadter-butterfly-style Brown-Zak minibands manifested by magneto-oscillations in two-dimensional electron systems. Here, we present the semiclassical precursors of these quantum magneto-oscillations which appear in graphene superlattices at low magnetic field near the Lifshitz transitions and persist at elevated temperatures. These oscillations originate from Aharonov-Bohm interference of electron waves following open trajectories that belong to a kagome-shaped network of paths characteristic for Lifshitz transitions in the moire superlattice minibands of twistronic graphenes.

Mixing of moiré-surface and bulk states in graphite

Van der Waals assembly enables the design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices1-9. This twistronics approach has resulted in numerous previously undescribed physics, including strong correlations and superconductivity in twisted bilayer graphene10-12, resonant excitons, charge ordering and Wigner crystallization in transition-metal chalcogenide moiré structures13-18 and Hofstadter's butterfly spectra and Brown-Zak quantum oscillations in graphene superlattices19-22. Moreover, twistronics has been used to modify near-surface states at the interface between van der Waals crystals23,24. Here we show that electronic states in three-dimensional (3D) crystals such as graphite can be tuned by a superlattice potential occurring at the interface with another crystal-namely, crystallographically aligned hexagonal boron nitride. This alignment results in several Lifshitz transitions and Brown-Zak oscillations arising from near-surface states, whereas, in high magnetic fields, fractal states of Hofstadter's butterfly draw deep into the bulk of graphite. Our work shows a way in which 3D spectra can be controlled using the approach of 2D twistronics.

Mixed-dimensional moiré systems of twisted graphitic thin films

Moiré patterns formed by stacking atomically thin van der Waals crystals with a relative twist angle can give rise to notable new physical properties1,2. The study of moiré materials has so far been limited to structures comprising no more than a few van der Waals sheets, because a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the properties of a bulk three-dimensional crystal. Here, we perform transport measurements of dual-gated devices constructed by slightly rotating a monolayer graphene sheet atop a thin bulk graphite crystal. We find that the moiré potential transforms the electronic properties of the entire bulk graphitic thin film. At zero and in small magnetic fields, transport is mediated by a combination of gate-tuneable moiré and graphite surface states, as well as coexisting semimetallic bulk states that do not respond to gating. At high field, the moiré potential hybridizes with the graphitic bulk states due to the unique properties of the two lowest Landau bands of graphite. These Landau bands facilitate the formation of a single quasi-two-dimensional hybrid structure in which the moiré and bulk graphite states are inextricably mixed. Our results establish twisted graphene-graphite as the first in a new class of mixed-dimensional moiré materials.

High-Order Fractal Quantum Oscillations in Graphene/BN Superlattices in the Extreme Doping Limit

Recent studies of van der Waals (vdW) heterostructures and superlattices have shown intriguing quantum phenomena, but these have been largely explored only in the moderate carrier density regime. Here, we report the probe of high-temperature fractal Brown-Zak (BZ) quantum oscillations through magnetotransport in the extreme doping regimes by applying a newly developed electron beam doping technique. This technique gives access to both ultrahigh electron and hole densities beyond the dielectric breakdown limit in graphene/BN superlattices, enabling the observation of nonmonotonic carrier-density dependence of fractal BZ states and up to fourth-order fractal BZ features despite strong electron-hole asymmetry. Theoretical tight-binding simulations qualitatively reproduce all observed fractal BZ features and attribute the nonmonotonic dependence to the weakening of superlattice effects at high carrier densities.

The magnetic field driven superconductor-metal transition in disordered hole-overdoped cuprates

By solving the Bogoliubov-de Gennes equations for ad-wave superconductor, we explore how the interplay between disorder and the orbital depairing of an external magnetic field influences the superconductor-metal transition of the hole-overdoped cuprates. For highly disordered systems, we find granular Cooper paring to persist above the critical field where the superfluid stiffness goes to zero. We also show that because the vortices are attracted to regions where the superconducting pairing is already weak, the Caroli-de Gennes-Matricon zero-bias peak in the local density of states at the vortex cores disappears already at moderate disorder.

Unconventional self-similar Hofstadter superconductivity from repulsive interactions

Fractal Hofstadter bands have become widely accessible with the advent of moiré superlattices, opening the door to studies of the effect of interactions in these systems. In this work we employ a renormalization group (RG) analysis to demonstrate that the combination of repulsive interactions with the presence of a tunable manifold of Van Hove singularities provides a new mechanism for driving unconventional superconductivity in Hofstadter bands. Specifically, the number of Van Hove singularities at the Fermi energy can be controlled by varying the flux per unit cell and the electronic filling, leading to instabilities toward nodal superconductivity and chiral topological superconductivity with Chern number [Formula: see text]. The latter is characterized by a self-similar fixed trajectory of the RG flow and an emerging self-similarity symmetry of the order parameter. Our results establish Hofstadter quantum materials such as moiré heterostructures as promising platforms for realizing novel reentrant Hofstadter superconductors.

Band conductivity oscillations in a gate-tunable graphene superlattice

Electrons exposed to a two-dimensional (2D) periodic potential and a uniform, perpendicular magnetic field exhibit a fractal, self-similar energy spectrum known as the Hofstadter butterfly. Recently, related high-temperature quantum oscillations (Brown-Zak oscillations) were discovered in graphene moiré systems, whose origin lies in the repetitive occurrence of extended minibands/magnetic Bloch states at rational fractions of magnetic flux per unit cell giving rise to an increase in band conductivity. In this work, we report on the experimental observation of band conductivity oscillations in an electrostatically defined and gate-tunable graphene superlattice, which are governed both by the internal structure of the Hofstadter butterfly (Brown-Zak oscillations) and by a commensurability relation between the cyclotron radius of electrons and the superlattice period (Weiss oscillations). We obtain a complete, unified description of band conductivity oscillations in two-dimensional superlattices, yielding a detailed match between theory and experiment.

Long-range ballistic transport of Brown-Zak fermions in graphene superlattices

In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational (p/q) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Brown-Zak fermions can exhibit mobilities above 10⁶ cm² V⁻¹ s⁻¹ and the mean free path exceeding several micrometers. The exceptional quality of our devices allows us to show that Brown-Zak minibands are 4q times degenerate and all the degeneracies (spin, valley and mini-valley) can be lifted by exchange interactions below 1 K. We also found negative bend resistance at 1/q fractions for electrical probes placed as far as several micrometers apart. The latter observation highlights the fact that Brown-Zak fermions are Bloch quasiparticles propagating in high fields along straight trajectories, just like electrons in zero field.

Here, the authors show that Brown-Zak fermions in graphene-on-boron-nitride superlattices exhibit mobilities above 10⁶ cm²/V s and micrometer scale ballistic transport.

Heteromoiré Engineering on Magnetic Bloch Transport in Twisted Graphene Superlattices

Localized electrons subject to applied magnetic fields can restart to propagate freely through the lattice in delocalized magnetic Bloch states (MBSs) when the lattice periodicity is commensurate with the magnetic length. Twisted graphene superlattices with moiré wavelength tunability enable experimental access to the unique delocalization in a controllable fashion. Here, we report the observation and characterization of high-temperature Brown-Zak (BZ) oscillations which come in two types, 1/B and B periodicity, originating from the generation of integer and fractional MBSs, in the twisted bilayer and trilayer graphene superlattices, respectively. Coexisting periodic-in-1/B oscillations assigned to different moiré wavelengths are dramatically observed in small-angle twisted bilayer graphene, which may arise from angle-disorder-induced in-plane heteromoiré superlattices. Moreover, the vertical stacking of heteromoiré supercells in double-twisted trilayer graphene results in a mega-sized superlattice. The exotic superlattice contributes to the periodic-in-B oscillation and dominates the magnetic Bloch transport.

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electron and hole mobilities. Over the last decades, our understanding of carrier mobilities has largely been shaped by experimental investigations and empirical models. Recently, advances in electronic structure methods for real materials have made it possible to study these properties with predictive accuracy and without resorting to empirical parameters. These new developments are unlocking exciting new opportunities, from exploring carrier transport in quantum matter to in silico designing new semiconductors with tailored transport properties. In this article, we review the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors. Our aim is threefold: to make this rapidly-growing research area accessible to a broad community of condensed-matter theorists and materials scientists; to identify key challenges that need to be addressed in order to increase the predictive power of these methods; and to identify new opportunities for increasing the impact of these computational methods on the science and technology of advanced materials. The review is organized in three parts. In the first part, we offer a brief historical overview of approaches to the calculation of carrier mobilities, and we establish the conceptual framework underlying modern ab initio approaches. We summarize the Boltzmann theory of carrier transport and we discuss its scope of applicability, merits, and limitations in the broader context of many-body Green's function approaches. We discuss recent implementations of the Boltzmann formalism within the context of density functional theory and many-body perturbation theory calculations, placing an emphasis on the key computational challenges and suggested solutions. In the second part of the article, we review applications of these methods to materials of current interest, from three-dimensional semiconductors to layered and two-dimensional materials. In particular, we discuss in detail recent investigations of classic materials such as silicon, diamond, gallium arsenide, gallium nitride, gallium oxide, and lead halide perovskites as well as low-dimensional semiconductors such as graphene, silicene, phosphorene, molybdenum disulfide, and indium selenide. We also review recent efforts toward high-throughput calculations of carrier transport. In the last part, we identify important classes of materials for which an ab initio study of carrier mobilities is warranted. We discuss the extension of the methodology to study topological quantum matter and materials for spintronics and we comment on the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism.

Topologically Protected Landau Level in the Vortex Lattice of a Weyl Superconductor

The question whether the mixed phase of a gapless superconductor can support a Landau level is a celebrated problem in the context of d-wave superconductivity, with a negative answer: the scattering of the subgap excitations (massless Dirac fermions) by the vortex lattice obscures the Landau level quantization. Here we show that the same question has a positive answer for a Weyl superconductor: the chirality of the Weyl fermions protects the zeroth Landau level by means of a topological index theorem. As a result, the heat conductance parallel to the magnetic field has the universal value G=1/2g_{0}Φ/Φ_{0}, with Φ as the magnetic flux through the system, Φ_{0} as the superconducting flux quantum, and g_{0} as the thermal conductance quantum.

Electronic orbital response of regular extended and infinite periodic systems to magnetic fields. I. Theoretical foundations for static case

A theoretical treatment for the orbital response of an infinite, periodic system to a static, homogeneous, magnetic field is presented. It is assumed that the system of interest has an energy gap separating occupied and unoccupied orbitals and a zero Chern number. In contrast to earlier studies, we do not utilize a perturbation expansion, although we do assume the field is sufficiently weak that the occurrence of Landau levels can be ignored. The theory is developed by analyzing results for large, finite systems and also by comparing with the analogous treatment of an electrostatic field. The resulting many-electron Hamilton operator is forced to be hermitian, but hermiticity is not preserved, in general, for the subsequently derived single-particle operators that determine the electronic orbitals. However, we demonstrate that when focusing on the canonical solutions to the single-particle equations, hermiticity is preserved. The issue of gauge-origin dependence of approximate solutions is addressed. Our approach is compared with several previously proposed treatments, whereby limitations in some of the latter are identified.

High-order fractal states in graphene superlattices

Graphene superlattices were shown to exhibit high-temperature quantum oscillations due to periodic emergence of delocalized Bloch states in high magnetic fields such that unit fractions of the flux quantum pierce a superlattice unit cell. Under these conditions, semiclassical electron trajectories become straight again, similar to the case of zero magnetic field. Here, we report magnetotransport measurements that reveal second-, third-, and fourth-order magnetic Bloch states at high electron densities and temperatures above 100 K. The recurrence of these states creates a fractal pattern intimately related to the origin of Hofstadter butterflies. The hierarchy of the fractal states is determined by the width of magnetic minibands, in qualitative agreement with our band-structure calculations.

High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices

Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene superlattices support a different type of quantum oscillation that does not rely on Landau quantization. The oscillations are extremely robust and persist well above room temperature in magnetic fields of only a few tesla. We attribute this phenomenon to repetitive changes in the electronic structure of superlattices such that charge carriers experience effectively no magnetic field at simple fractions of the flux quantum per superlattice unit cell. Our work hints at unexplored physics in Hofstadter butterfly systems at high temperatures.

Fractional quantum Hall effect in Hofstadter butterflies of Dirac fermions

We report on the influence of a periodic potential on the fractional quantum Hall effect (FQHE) states in monolayer graphene. We have shown that for two values of the magnetic flux per unit cell (one-half and one-third flux quantum) an increase of the periodic potential strength results in a closure of the FQHE gap and appearance of gaps due to the periodic potential. In the case of one-half flux quantum this causes a change of the ground state and consequently the change of the momentum of the system in the ground state. While there is also crossing between low-lying energy levels for one-third flux quantum, the ground state does not change with the increase of the periodic potential strength and is always characterized by the same momentum. Finally, it is shown that for one-half flux quantum the emergent gaps are due entirely to the electron-electron interaction, whereas for the one-third flux quantum per unit cell these are due to both non-interacting electrons (Hofstadter butterfly pattern) and the electron-electron interaction.

The integer quantum Hall effect of a square lattice with an array of point defects

The electronic properties of a square lattice under an applied perpendicular magnetic field in the presence of impurities or vacancies are investigated by the tight-binding method including up to second nearest neighbor interactions. These imperfections result in new gaps and bands in the Hofstadter butterfly even when the second order interactions break the bipartite symmetry. In addition, the whole spectrum of the Hall conduction is obtained by the Kubo formula for the corresponding cases. The results are in accordance with the Thouless-Kohmoto-Nightingale-den Nijs integers when the Fermi energy lies in an energy gap. We find that the states due to the vacancies or impurities with small hopping constants are highly localized and do not contribute to the Hall conduction. However, the impurities with high hopping constants result in new Hall plateaus with constant conduction of σ(xy) =± e(2)/h, since high hopping constants increase the probability of an electron contributing to the conduction.

Local-gauge finite-element method for electron waves in magnetic fields

The finite-element method (FEM) has already been extended to analyze transport properties of electron waves of two-dimensional electron systems in magnetic fields. Although many researchers have created new formulations or improvements to this method, few have analyzed how this method is applied to realistic systems. The present paper suggests that conventional formulations of the FEM do not give accurate results for large systems or for strong magnetic fields; in addition, it suggests that the selected gauge significantly influences the numerical results. Furthermore, this paper proposes a conceptually different formulation of the FEM that solves the poor convergence problem. This formulation is simple: matrix elements are multiplied by the Peierls phase in the absence of a magnetic field. To show the advantages of this formulation, numerical examples are presented.

Vortex lattices as a key model for the fractional quantum Hall effect

It is demonstrated that all observed fractions at moderate Landau level fillings for the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The necessary additional flux is supplied by the vortex lattice, which allows us to consider all fractions in a unified frame. The group classification predicts the electron density of the ground state and the existence of a gap that separates it from excited states. This gap was calculated for some lattices in a simplified model.

Ab initio calculations in a uniform magnetic field using periodic supercells

We present a formulation of ab initio electronic structure calculations in a finite magnetic field, which retains the simplicity and efficiency of techniques widely used in first principles molecular dynamics simulations, based on plane-wave basis sets and Fourier transforms. In addition we discuss results obtained with this method for the energy spectrum of interacting electrons in quantum wells, and for the electronic properties of dense fluid deuterium in a uniform magnetic field.

Bloch electrons in a magnetic field: why does chaos send electrons the hard Way?

We find that a 2D periodic potential, with different modulation amplitudes in the x and y directions, and a perpendicular magnetic field may lead to a transition to electron transport along the direction of stronger modulation and to localization in the direction of weaker modulation. In the experimentally accessible regime we relate this new quantum transport phenomenon to avoided band crossings due to classical chaos.