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Kumari P, Majumder S, Kar S, Rani S, Nair AK, Kumari K, Kamalakar MV, Ray SJ. An all phosphorene lattice nanometric spin valve. Sci Rep 2024; 14:9138. [PMID: 38644366 PMCID: PMC11033266 DOI: 10.1038/s41598-024-58589-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Accepted: 04/01/2024] [Indexed: 04/23/2024] Open
Abstract
Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements at both ends of a phosphorene nanoribbon acting as ferromagnetic electrodes in the spin valve. Through First-principles based calculations, we have extensively studied the spin-dependent transport characteristics of the new spin valve structures. Systematic exploration of the magnetoresistance (MR) of the spin valve for various substitutional atoms and bias voltage resulted in a phase diagram offering a colossal MR for V and Cr-substitutional atoms. Such MR can be directly attributed to their specific electronic structure, which can be further tuned by a gate voltage, for electric field controlled spin valves. The spin-dependent transport characteristics here reveal new features such as negative conductance oscillation and switching of the sign of MR due to change in the majority spin carrier type. Our study creates possibilities for the design of nanometric spin valves, which could enable integration of memory and logic elements for all phosphorene 2D processors.
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Affiliation(s)
- P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Majumder
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - A K Nair
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - K Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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Gupta N, Sachin S, Kumari P, Rani S, Ray SJ. Twistronics in two-dimensional transition metal dichalcogenide (TMD)-based van der Waals interface. RSC Adv 2024; 14:2878-2888. [PMID: 38239438 PMCID: PMC10793078 DOI: 10.1039/d3ra06559f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 12/06/2023] [Indexed: 01/22/2024] Open
Abstract
Transition metal dichalcogenides (TMD) based heterostructures have gained significant attention lately because of their distinct physical properties and potential uses in electronics and optoelectronics. In the present work, the effects of twist on the structural, electronic, and optical properties (such as the static dielectric constant, refractive index, extinction coefficient, and absorption coefficient) of vertically stacked TMD heterostructures, namely MoSe2/WSe2, WS2/WSe2, MoSe2/WS2 and MoS2/WSe2, have been systematically studied and a thorough comparison is done among these heterostructures. In addition, the absence of negative frequency in the phonon dispersion curve and a low formation energy confirm the structural and thermodynamical stability of all the proposed TMD heterostructures. The calculations are performed using first-principles-based density functional theory (DFT) method. Beautiful Moiré patterns are formed due to the relative rotation of the layers as a consequence of the superposition of the periodic structures of the TMDs on each other. Twist engineering allows the modulation of bandgaps and a phase change from direct to indirect band gap semiconductors as well. The high optical absorption in the visible range of spectrum makes these twisted heterostructures very promising candidates in photovoltaic applications.
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Affiliation(s)
- Neelam Gupta
- Department of Physics, Indian Institute of Technology Patna Bihta 801103 India
| | - Saurav Sachin
- Department of Physics, Indian Institute of Technology Patna Bihta 801103 India
| | - Puja Kumari
- Department of Physics, Indian Institute of Technology Patna Bihta 801103 India
| | - Shivani Rani
- Department of Physics, Indian Institute of Technology Patna Bihta 801103 India
| | - Soumya Jyoti Ray
- Department of Physics, Indian Institute of Technology Patna Bihta 801103 India
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Kar S, Kumari P, Kamalakar MV, Ray SJ. Twist-assisted optoelectronic phase control in two-dimensional (2D) Janus heterostructures. Sci Rep 2023; 13:13696. [PMID: 37608024 PMCID: PMC10444812 DOI: 10.1038/s41598-023-39993-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 08/03/2023] [Indexed: 08/24/2023] Open
Abstract
Atomically thin two-dimensional (2D) Janus materials and their Van der Waals heterostructures (vdWHs) have emerged as a new class of intriguing semiconductor materials due to their versatile application in electronic and optoelectronic devices. Herein, We have invstigated most probable arrangements of different inhomogeneous heterostructures employing one layer of transition metal dichalcogenide, TMD (MoS2, WS2, MoSe2, and WSe2) piled on the top of Janus TMD (MoSeTe or WSeTe) and investigated their structural, electronic as well as optical properties through first-principles based calculations. After that, we applied twist engineering between the monolayers from 0[Formula: see text] 60[Formula: see text] twist angle, which delivers lattice reconstruction and improves the performance of the vdWHs due to interlayer coupling. The result reveals that all the proposed vdWHs are dynamically and thermodynamically stable. Some vdWHs such as MoS2/MoSeTe, WS2/WSeTe, MoS2/WSeTe, MoSe2/MoSeTe, and WS2/MoSeTe exhibit direct bandgap with type-II band alignment at some specific twist angle, which shows potential for future photovoltaic devices. Moreover, the electronic property and carrier mobility can be effectively tuned in the vdWHs compared to the respective monolayers. Furthermore, the visible optical absorption of all the Janus vdWHs at [Formula: see text] = 0[Formula: see text] can be significantly enhanced due to the weak inter-layer coupling and redistribution of the charges. Therefore, the interlayer twisting not only provides an opportunity to observe new exciting properties but also gives a novel route to modulate the electronic and optoelectronic properties of the heterostructure for practical applications.
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Affiliation(s)
- S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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Kaewmaraya T, Ngamwongwan L, Moontragoon P, Jarernboon W, Singh D, Ahuja R, Karton A, Hussain T. Novel green phosphorene as a superior chemical gas sensing material. JOURNAL OF HAZARDOUS MATERIALS 2021; 401:123340. [PMID: 32652419 DOI: 10.1016/j.jhazmat.2020.123340] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2020] [Revised: 06/13/2020] [Accepted: 06/27/2020] [Indexed: 06/11/2023]
Abstract
Green phosphorus and its monolayer variant, green phosphorene (GreenP), are the recent members of two-dimensional (2D) phosphorus polymorphs. The new polymorph possesses the high stability, tunable direct bandgap, exceptional electronic transport, and directionally anisotropic properties. All these unique features could reinforce it the new contender in a variety of electronic, optical, and sensing devices. Herein, we present gas-sensing characteristics of pristine and defected GreenP towards major environmental gases (i. e., NH3, NO, NO2, CO, CO2, and H2O) using combination of the density functional theory, statistical thermodynamic modeling, and the non-equilibrium Green's function approach (NEGF). The calculated adsorption energies, density of states (DOS), charge transfer, and Crystal Orbital Hamiltonian Population (COHP) reveal that NO, NO2, CO, CO2 are adsorbed on GreenP, stronger than both NH3 and H2O, which are weakly physisorbed via van der Waals interactions. Furthermore, substitutional doping by sulfur can selectively intensify the adsorption towards crucial NO2 gas because of the enhanced charge transfer between p orbitals of the dopant and the analyte. The statistical estimation of macroscopic measurable adsorption densities manifests that the significant amount of NO2 molecules can be practically adsorbed at ambient temperature even at the ultra-low concentration of part per billion (ppb). In addition, the current-voltage (I-V) characteristics of S-doped GreenP exhibit a variation upon NO2 exposure, indicating the superior sensitivity in sensing devices. Our work sheds light on the promising application of the novel GreenP as promising chemical gas sensors.
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Affiliation(s)
- T Kaewmaraya
- Integrated Nanotechnology Research Center, Department of Physics, Khon Kaen University, Khon Kaen, Thailand; Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Research Network of NANOTEC- KKU (RNN), Khon Kaen University, Khon Kaen, 40002, Thailand.
| | - L Ngamwongwan
- School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand
| | - P Moontragoon
- Integrated Nanotechnology Research Center, Department of Physics, Khon Kaen University, Khon Kaen, Thailand; Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Research Network of NANOTEC- KKU (RNN), Khon Kaen University, Khon Kaen, 40002, Thailand
| | - W Jarernboon
- Integrated Nanotechnology Research Center, Department of Physics, Khon Kaen University, Khon Kaen, Thailand; Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Research Network of NANOTEC- KKU (RNN), Khon Kaen University, Khon Kaen, 40002, Thailand
| | - D Singh
- Condensed Matter Theory Group, Department of Physics and Astronomy, Box 516, Uppsala University, S-75120, Uppsala, Sweden
| | - R Ahuja
- Condensed Matter Theory Group, Department of Physics and Astronomy, Box 516, Uppsala University, S-75120, Uppsala, Sweden; Applied Materials Physics, Department of Materials and Engineering, Royal Institute of Technology (KTH), S-100 44, Stockholm, Sweden
| | - A Karton
- School of Molecular Sciences, The University of Western Australia, Perth, WA 6009, Australia
| | - T Hussain
- School of Molecular Sciences, The University of Western Australia, Perth, WA 6009, Australia
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Nair AK, Ray SJ. Electronic phase-crossover and room temperature ferromagnetism in a two-dimensional (2D) spin lattice. RSC Adv 2020; 11:946-952. [PMID: 35423672 PMCID: PMC8693316 DOI: 10.1039/d0ra09726h] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 11/26/2020] [Indexed: 12/29/2022] Open
Abstract
Tuning of system properties such as electronic and magnetic behaviour through various engineering techniques is necessary for optoelectronic and spintronic applications. In our current work, we employ first-principles methodologies along with Monte-Carlo simulations to comprehensively study the electronic and magnetic behaviour of 2-dimensional (2D) Cr2Ge2Te6 (Tc = 61 K), uncovering the impact of strain and electric field on the material. In the presence of strain, we were able to achieve high temperature magnetic ordering in the layer along with observable phase crossover in the electronic state of the system, where the system exhibited transference from semiconducting to half-metallic state. Finally, on coupling strain and electric field remarkable increase in Curie temperature (Tc) ∼ 331 K (above 5-fold enhancement from pristine configuration) was observed, which is very well above room temperature. Our inferences have shed light on a relatively new type of coupling method involving strain and electric field which may have tremendous implications in the development of 2D spintronic architecture. In the presence of strain, high temperature magnetic ordering in Cr2Ge2Te6 was observed with electronic phase crossover from semiconducting to half-metallic state. On coupling strain and electric field, the Curie temperature reaches 331 K.![]()
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Affiliation(s)
- A K Nair
- Department of Physics, Indian Institute of Technology Patna Bihta 801106 India
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna Bihta 801106 India
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Kaur S, Kumar A, Srivastava S, Tankeshwar K, Pandey R. Novel phosphorus-based 2D allotropes with ultra-high mobility. NANOTECHNOLOGY 2020; 31:325702. [PMID: 32330912 DOI: 10.1088/1361-6528/ab8cf1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Electronic structure calculations based on density functional theory were performed to investigate structural, mechanical, and electronic properties of phosphorene-based large honeycomb dumbbell (LHD) hybrid structures and a new phosphorene allotrope, referred to as ψ″-P. The LHD hybrids (i.e., X6P4; X being C or Si or Ge or Sn) and ψ″-P have significantly higher bandgaps than the corresponding pristine LHD structures, except the case of C6P4, which is metallic. ψ″-P is found to be a highly flexible p-type material which shows strain-engineered photocatalytic activity in a highly alkaline medium. The carrier mobility of the considered systems is as high as 105 cm2 V-1 s-1 (specifically the electron mobility of LHD structures). The calculated STM images display the surface morphologies of the LHD hybrids and ψ″-P. The predicted phosphorus-based 2D structures with novel electronic properties may be candidate materials for nanoscale devices.
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Affiliation(s)
- Sumandeep Kaur
- Department of Physics, Panjab University, Chandigarh 160014, India. Department of Physics, Michigan Technological University, Houghton, MI 49931, United States of America
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Rani S, Nair AK, Venkata Kamalakar M, Ray SJ. Spin-selective response tunability in two-dimensional nanomagnet. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:415301. [PMID: 32320965 DOI: 10.1088/1361-648x/ab8bf4] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2020] [Accepted: 04/22/2020] [Indexed: 06/11/2023]
Abstract
Recent reports on the two-dimensional (2D) material CrOCl revealed magnetic ordering and spin polarisation with Curie TemperatureTc∼ 160 K, values higher than most diluted magnetic semiconductors. Here, we investigate the uniaxial and biaxial strain-dependent electronic and transport properties of CrOCl monolayer using first-principles based calculations. The calculated Young's modulus indicates high mechanical flexibility for the application of high strain. Our study shows that strain can induce phase changes from a bipolar magnetic semiconductor → half metal → magnetic metal in the material, leading to interesting spin-resolved conductance with 100% spin filtering. Furthermore, the current-voltage (I-V) response showed conductance fluctuations, characterised by peak to valley ratio and switching efficiency offering high strain assisted tunability. Overall, CrOCl shows a highly anisotropic behaviour with the material displaying 100% spin polarisation in the tensile strain region. The electronic, transport and mechanical properties indicate that CrOCl is a versatile 2D material with multi-phase capabilities having promising applications for future nanospintronic devices.
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Affiliation(s)
- S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta 801106, India
| | - A K Nair
- Department of Physics, Indian Institute of Technology Patna, Bihta 801106, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, SE-75120, Uppsala, Sweden
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta 801106, India
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Nair AK, Rani S, Kamalakar MV, Ray SJ. Bi-stimuli assisted engineering and control of magnetic phase in monolayer CrOCl. Phys Chem Chem Phys 2020; 22:12806-12813. [PMID: 32469019 DOI: 10.1039/d0cp01204a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Magnetic phase control and room temperature magnetic stability in two-dimensional (2D) materials are indispensable for realising advanced spintronic and magneto-electronic functions. Our current work employs first-principles calculations to comprehensively study the magnetic behaviour of 2D CrOCl, uncovering the impact of strain and electric field on the material. Our studies have revealed that uniaxial strain leads to the feasibility of room temperature ferromagnetism in the layer and also detected the occurrence of a ferromagnetic → antiferromagnetic phase transition in the system, which is anisotropic along the armchair and zigzag directions. Beyond such a strain effect, the coupling of strain and electric field leads to a remarkable enhancement of the Curie temperature (Tc) ∼ 450 K in CrOCl. These predictions based on our detailed simulations show the prospect of multi-stimuli magnetic phase control, which could have great significance for realizing magneto-mechanical sensors.
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Affiliation(s)
- A K Nair
- Department of Physics, Indian Institute of Technology Patna, Bihta 801106, India.
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Kumari P, Majumder S, Rani S, Nair AK, Kumari K, Kamalakar MV, Ray SJ. High efficiency spin filtering in magnetic phosphorene. Phys Chem Chem Phys 2020; 22:5893-5901. [DOI: 10.1039/c9cp05390e] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
We present high efficiency spin filtering behaviour in magnetically rendered phosphorene, doped with various 3d block elements. A phase diagram was obtained depicting the presence of various electronic and magnetic states.
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Affiliation(s)
- P. Kumari
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - S. Majumder
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - S. Rani
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - A. K. Nair
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - K. Kumari
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | | | - S. J. Ray
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
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Rani S, Ray SJ. Two-dimensional C3N based sub-10 nanometer biosensor. Phys Chem Chem Phys 2020; 22:11452-11459. [DOI: 10.1039/d0cp00546k] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
The current observation demonstrates the usefulness of the two-dimensional C3N system as a next generation bio-sensor for the sequencing of various nucleobases, offering new leads for future developments in bioelectronics, superior sensing architectures and sustainable designs.
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Affiliation(s)
- S. Rani
- Department of Physics
- Indian Institute of Technology Patna
- Bihta
- India
| | - S. J. Ray
- Department of Physics
- Indian Institute of Technology Patna
- Bihta
- India
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Betancur-Ocampo Y, Leyvraz F, Stegmann T. Electron Optics in Phosphorene pn Junctions: Negative Reflection and Anti-Super-Klein Tunneling. NANO LETTERS 2019; 19:7760-7769. [PMID: 31544466 DOI: 10.1021/acs.nanolett.9b02720] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Ballistic electrons in phosphorene pn junctions show optical-like phenomena. Phosphorene is modeled by a tight-binding Hamiltonian that describes its electronic structure at low energies, where the electrons behave in the armchair direction as massive Dirac Fermions and in the orthogonal zigzag direction as Schrödinger electrons. Applying the continuum approximation, we derive the electron optics laws in phosphorene pn junctions, which show very particular and unusual properties. Because of the anisotropy of the electronic structure, these laws depend strongly on the orientation of the junction with respect to the sublattice. Negative and anomalous reflection are observed for tilted junctions, whereas the typical specular reflection is found only if the junction is parallel to the zigzag or armchair edges. Moreover, omni-directional total reflection, called anti-super-Klein tunneling, is observed if the junction is parallel to the armchair edge. Applying the nonequilibrium Green's function method on the tight-binding model, we calculate numerically the current flow. The good agreement of both approaches confirms the atypical transport properties, which can be used in nanodevices to collimate and filter the electron flow or to switch its direction.
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Nair AK, Kumari P, Kamalakar MV, Ray SJ. Dramatic magnetic phase designing in phosphorene. Phys Chem Chem Phys 2019; 21:23713-23719. [DOI: 10.1039/c9cp04871e] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Phosphorene is a unique two-dimensional semiconductor that has huge potential for nanoelectronic and spintronic applications. In the presence of various 3d block elements, remarkable feasibility of ferromagnetism and antiferromagnetism up to a large temperature ∼1150 K was observed.
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Affiliation(s)
- A. K. Nair
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - P. Kumari
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | | | - S. J. Ray
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
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