Angle-resolved ultraviolet photoelectron spectroscopy of the unoccupied band structure of graphite

Inducing Circularly Polarized Single-Photon Emission via Chiral-Induced Spin Selectivity

One of the central aims of the field of spintronics is the control of individual electron spins to effectively manage the transmission of quantized data. One well-known mechanism for controlling electronic spin transport is the chiral-induced spin-selectivity (CISS) effect in which a helical nanostructure imparts a preferential spin orientation on the electronic transport. One potential application of the CISS effect is as a transduction pathway between electronic spin and circularly polarized light within nonreciprocal photonic devices. In this work, we identify and quantify the degree of chiral-induced spin-selective electronic transport in helical polyaniline films using magnetoconductive atomic force microscopy (mcAFM). We then induce circularly polarized quantum light emission from CdSe/CdS core/shell quantum dots placed on these films, demonstrating a degree of circular polarization of up to ∼21%. Utilizing time-resolved photoluminescence microscopy, we measure the radiative lifetime difference associated with left- and right-handed circular polarizations of single emitters. These lifetime differences, in combination with Kelvin probe mapping of the variation of surface potential with magnetization of the substrate, help establish an energy level diagram describing the spin-dependent transport pathways that enable the circularly polarized photoluminescence.

Flattening conduction and valence bands for interlayer excitons in a moiré MoS2/WSe2 heterobilayer

We explore the flatness of conduction and valence bands of interlayer excitons in MoS2/WSe2 van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model where the moiré pattern from lattice mismatch and/or twisting is represented by an equivalent mesoscopic periodic potential. We demonstrate that the mismatch moiré potential is too weak to produce significant flattening. Moreover, we draw attention to the fact that the quasi-particle effective masses around the Γ-point and the band flattening are reduced with twisting. As an alternative approach, we show (i) that reducing the interlayer distance by uniform vertical pressure can significantly increase the effective mass of the moiré hole, and (ii) that the moiré depth and its band flattening effects are strongly enhanced by accessible electric gating fields perpendicular to the heterobilayer, with resulting electron and hole effective masses increased by more than an order of magnitude - leading to record-flat bands. These findings impose boundaries on the commonly generalized benefits of moiré twistronics, while also revealing alternative feasible routes to achieve truly flat electron and hole bands to carry us to strongly correlated excitonic phenomena on demand.

Magnetic Electrides: High-Throughput Material Screening, Intriguing Properties, and Applications

Electrides are a unique class of electron-rich materials where excess electrons are localized in interstitial lattice sites as anions, leading to a range of unique properties and applications. While hundreds of electrides have been discovered in recent years, magnetic electrides have received limited attention, with few investigations into their fundamental physics and practical applications. In this work, 51 magnetic electrides (12 antiferromagnetic, 13 ferromagnetic, and 26 interstitial-magnetic) were identified using high-throughput computational screening methods and the latest Materials Project database. Based on their compositions, these magnetic electrides can be classified as magnetic semiconductors, metals, or half-metals, each with unique topological states and excellent catalytic performance for N₂ fixation due to their low work functions and excess electrons. The novel properties of magnetic electrides suggest potential applications in spintronics, topological electronics, electron emission, and as high-performance catalysts. This work marks the beginning of a new era in the identification, investigation, and practical applications of magnetic electrides.

Tailorable Electronic and Electric Properties of Graphene with Selective Decoration of Silver Nanoparticles by Laser-Assisted Photoreduction

While graphene shows great potential for diverse device applications, to broaden the scope of graphene-based device applications further, it would be necessary to tune the electronic state of graphene and its resultant electrical properties properly. Surface decoration with metal nanoparticles is one of the efficient doping methods to control the properties of two-dimensional materials. Here, we report the p-type doping effects in single-layer graphene decorated with silver nanoparticles (AgNPs) that were formed area-selectively by the facile one-step photoreduction (PR) process based on focused-laser irradiation. During the PR process, AgNPs were reduced on graphene in AgNO₃ solution by laser-driven photoexcitation followed by chemical reactions. Based on scanning electron microscopy analyses, the morphology characteristics of AgNPs were shown to be modulated by the laser dwell time and power controllably. Further, p-type doping effects were demonstrated using graphene-field-effect transistor structures whose graphene channels were selectively decorated with AgNPs by the PR process, as validated by the decrease in channel resistance and the shift of the Dirac point voltage. Moreover, the growth of AgNPs was observed to be more active on the graphene channel that was laser-annealed ahead of the PR process, leading to enhancing the efficiency of this approach for altering device characteristics.

In Situ Synthesis of a Bi2Te3-Nanosheet/Reduced-Graphene-Oxide Nanocomposite for Non-Enzymatic Electrochemical Dopamine Sensing

Dopamine is a neurotransmitter that helps cells to transmit pulsed chemicals. Therefore, dopamine detection is crucial from the viewpoint of human health. Dopamine determination is typically achieved via chromatography, fluorescence, electrochemiluminescence, colorimetry, and enzyme-linked methods. However, most of these methods employ specific biological enzymes or involve complex detection processes. Therefore, non-enzymatic electrochemical sensors are attracting attention owing to their high sensitivity, speed, and simplicity. In this study, a simple one-step fabrication of a Bi₂Te₃-nanosheet/reduced-graphene-oxide (BT/rGO) nanocomposite was achieved using a hydrothermal method to modify electrodes for electrochemical dopamine detection. The combination of the BT nanosheets with the rGO surface was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and Fourier-transform infrared spectroscopy. Electrochemical impedance spectroscopy, cyclic voltammetry, and differential pulse voltammetry were performed to analyze the electrochemical-dopamine-detection characteristics of the BT/rGO nanocomposite. The BT/rGO-modified electrode exhibited higher catalytic activity for electrocatalytic oxidation of 100 µM dopamine (94.91 µA, 0.24 V) than that of the BT-modified (4.55 µA, 0.26 V), rGO-modified (13.24 µA, 0.23 V), and bare glassy carbon electrode (2.86 µA, 0.35 V); this was attributed to the synergistic effect of the electron transfer promoted by the highly conductive rGO and the large specific surface area/high charge-carrier mobility of the two-dimensional BT nanosheets. The BT/rGO-modified electrode showed a detection limit of 0.06 µM for dopamine in a linear range of 10–1000 µM. Additionally, it exhibited satisfactory reproducibility, stability, selectivity, and acceptable recovery in real samples.

Ultrathin Three-Monolayer Tunneling Memory Selectors

High-density memory arrays require selector devices, which enable selection of a specific memory cell within a memory array by suppressing leakage current through unselected cells. Such selector devices must have highly nonlinear current-voltage characteristics and excellent endurance; thus selectors based on a tunneling mechanism present advantages over those based on the physical motion of atoms or ions. Here, we use two-dimensional (2D) materials to build an ultrathin (three-monolayer-thick) tunneling-based memory selector. Using a sandwich of h-BN, MoS₂, and h-BN monolayers leads to an "H-shaped" energy barrier in the middle of the heterojunction, which nonlinearly modulates the tunneling current when the external voltage is varied. We experimentally demonstrate that tuning the MoS₂ Fermi level can improve the device nonlinearity from 10 to 25. These results provide a fundamental understanding of the tunneling process through atomically thin 2D heterojunctions and lay the foundation for developing high endurance selectors with 2D heterojunctions, potentially enabling high-density non-volatile memory systems.

Alkaline earth atom doping-induced changes in the electronic and magnetic properties of graphene: a density functional theory study

Density functional theory was used to investigate the effects of doping alkaline earth metal atoms (beryllium, magnesium, calcium and strontium) on graphene. Electron transfer from the dopant atom to the graphene substrate was observed and was further probed by a combined electron localization function/non-covalent interaction (ELF/NCI) approach. This approach demonstrates that predominantly ionic bonding occurs between the alkaline earth dopants and the substrate, with beryllium doping having a variant characteristic as a consequence of electronegativity equalization attributed to its lower atomic number relative to carbon. The ionic bonding induces spin-polarized electronic structures and lower workfunctions for Mg-, Ca-, and Sr-doped graphene systems as compared to the pristine graphene. However, due to its variant bonding characteristic, Be-doped graphene exhibits non-spin-polarized p-type semiconductor behavior, which is consistent with previous works, and an increase in workfunction relative to pristine graphene. Dirac half-metal-like behavior was predicted for magnesium doped graphene while calcium doped and strontium doped graphene were predicted to have bipolar magnetic semiconductor behavior. These changes in the electronic and magnetic properties of alkaline earth doped graphene may be of importance for spintronic and other electronic device applications.

Surface science motivated by heating of trapped ions from the quantum ground state

For the past two and a half decades, anomalous heating of trapped ions from nearby electrode surfaces has continued to demonstrate unexpected results. Caused by electric-field noise, this heating of the ions' motional modes remains an obstacle for scalable quantum computation with trapped ions. One of the anomalous features of this electric-field noise is the reported nonmonotonic behavior in the heating rate when a trap is incrementally cleaned by ion bombardment. Motivated by this result, the present work reports on a surface analysis of a sample ion-trap electrode treated similarly with incremental doses of Ar+ ion bombardment. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were used to investigate how the work functions on the electrode surface vary depending on the residual contaminant coverage between each treatment. It is shown that the as-fabricated Au electrode is covered with a hydrocarbon film that is modified after the first treatment, resulting in work functions and core-level binding energies that resemble that of atomic-like carbon on Au. Changes in the spatial distribution of work functions with each treatment, combined with a suggested phenomenological coverage and surface-potential roughness dependence to the heating, appear to be related to the nonmonotonic behavior previously reported.

Photocurrent Imaging of Multi-Memristive Charge Density Wave Switching in Two-Dimensional 1T-TaS2

Transport studies of atomically thin 1T-TaS₂ have demonstrated the presence of intermediate resistance states across the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition, which can be further switched electrically. While this presents exciting opportunities for memristor applications, the switching mechanism could be potentially attributed to the formation of inhomogeneous C and NC domains. Here, we present combined electrical driving and photocurrent imaging of ultrathin 1T-TaS₂ in a heterostructure geometry. While micron-sized CDW domains are seen upon cooling, electrically driven transitions are largely uniform, indicating that the latter likely induces true metastable CDW states, which we then explain by a free energy analysis. Additionally, we are able to perform repeatable and bidirectional switching across the intermediate states without changing sample temperature, demonstrating that atomically thin 1T-TaS₂ can be further used as a robust and reversible multimemristor material for the first time.

Macroscale and Nanoscale Photoelectrochemical Behavior of p-Type Si(111) Covered by a Single Layer of Graphene or Hexagonal Boron Nitride

Two-dimensional (2D) materials may enable a general approach to the introduction of a dipole at a semiconductor surface as well as control over other properties of the double layer at a semiconductor/liquid interface. Vastly different properties can be found in the 2D materials currently studied due in part to the range of the distribution of density-of-states. In this work, the open-circuit voltage (V_oc) of p-Si-H, p-Si/Gr (graphene), and p-Si/h-BN (hexagonal boron nitride) in contact with a series of one-electron outer-sphere redox couples was investigated by macroscale measurements as well as by scanning electrochemical cell microscopy (SECCM). The band gaps of Gr and h-BN (0-5.97 eV) encompass the wide range of band gaps for 2D materials, so these interfaces (p-Si/Gr and p-Si/h-BN) serve as useful references to understand the behavior of 2D materials more generally. The value of V_oc shifted with respect to the effective potential of the contacting solution, with slopes (ΔV_oc/ΔE_Eff) of -0.27 and -0.38 for p-Si/Gr and p-Si/h-BN, respectively, indicating that band bending at the p-Si/h-BN and p-Si/Gr interfaces responds at least partially to changes in the electrochemical potential of the contacting liquid electrolyte. Additionally, SECCM is shown to be an effective method to interrogate the nanoscale photoelectrochemical behavior of an interface, showing little spatial variance over scales exceeding the grain size of the CVD-grown 2D materials in this work. The measurements demonstrated that the polycrystalline nature of the 2D materials had little effect on the results and confirmed that the macroscale measurements reflected the junction behavior at the nanoscale.

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Recently, there have been various attempts to demonstrate the feasibility of transition metal dichalcogenide (TMD) transistors for digital logic circuits. A complementary inverter circuit, which is a basic building block of a logic circuit, was implemented in earlier works by heterogeneously integrating n- and p-channel transistors fabricated on different TMD materials. Subsequently, to simplify the circuit design and fabrication process, complementary inverters were constructed on single-TMD materials using ambipolar transistors. However, continuous transition from the electron-conduction to the hole-conduction state in the ambipolar devices led to the problem of a high leakage current. Here, we report a polarity-controllable TMD transistor that can operate as both an n- and a p-channel transistor with a low leakage current of a few picoamperes. The device polarity can be switched simply by converting the sign of the drain voltage. This is because a metal-like tungsten ditelluride (WTe₂) with a low carrier concentration is used as a drain contact, which subsequently allows selective carrier injection at the palladium/tungsten diselenide (WSe₂) junction. In addition, by using the operating principle of the polarity-controllable transistor, we demonstrate a complementary inverter circuit on a single TMD channel material (WSe₂), which exhibits a very low static power consumption of a few hundred picowatts. Finally, we confirm the expandability of this polarity-controllable transistor toward more complex logic circuits by presenting the proper operation of a three-stage ring oscillator.

Interface properties of CoPc and CoPcF16 on graphene/nickel: influence of germanium intercalation

Photoelectron spectroscopy was used to investigate electronic interface properties and interactions of the organic semiconductors CoPc and CoPcF₁₆ on graphene/nickel based substrates. Additional focus was put on the influence of germanium intercalation of graphene/nickel. The presented results demonstrate that germanium can decouple graphene from nickel and in this manner restore its buffer layer properties. No charge transfer from the substrate to the organic layer is observed in the germanium intercalated case, while interface related peaks in the Co 2p core level spectra indicate such charge transfer on graphene/nickel. Strong interface dipoles are found for CoPcF₁₆ on graphene/nickel and on germanium intercalated graphene/nickel. Fluorine Auger parameters have been measured, and the results provide evidence for polarization and charge transfer screening effects of different amounts at the unlike film-substrate interfaces. The various contributions to the observed shifts are discussed.

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

Benefiting from the technique of vertically stacking 2D layered materials (2DLMs), an advanced novel device architecture based on a top-gated MoS2/WSe2 van der Waals (vdWs) heterostructure is designed. By adopting a self-aligned metal screening layer (Pd) to the WSe2 channel, a fixed p-doped state of the WSe2 as well as an independent doping control of the MoS2 channel can be achieved, thus guaranteeing an effective energy-band offset modulation and large through current. In such a device, under specific top-gate voltages, a sharp PN junction forms at the edge of the Pd layer and can be effectively manipulated. By varying top-gate voltages, the device can be operated under both quasi-Esaki diode and unipolar-Zener diode modes with tunable current modulations. A maximum gate-coupling efficiency as high as ≈90% and a subthreshold swing smaller than 60 mV dec-1 can be achieved under the band-to-band tunneling regime. The superiority of the proposed device architecture is also confirmed by comparison with a traditional heterostructure device. This work demonstrates the feasibility of a new device structure based on vdWs heterostructures and its potential in future low-power electronic and optoelectronic device applications.

Adsorption of Ultrathin Ethylene Carbonate Films on Pristine and Lithiated Graphite and Their Interaction with Li

Aiming at a better understanding of the solid-electrolyte interphase formation in Li-ion batteries, we have investigated the interaction of ultrathin films of ethylene carbonate (EC), which is a key solvent of battery electrolytes, with pristine and lithiated highly oriented pyrolytic graphite (HOPG) and with postdeposited Li. Employing X-ray and ultraviolet photoelectron spectroscopy as well as Fourier transform infrared spectroscopy under ultrahigh-vacuum conditions, in combination with density functional theory (DFT)-based calculations, we find that EC adsorbs molecularly intact on pristine HOPG in the entire temperature range between 80 K and desorption at 200 K. Features in the ultraviolet photoelectron spectra could be related to the molecular orbitals of EC obtained from DFT calculations, and a similar adsorption/desorption behavior is obtained also on lithiated HOPG. In contrast, stepwise postdeposition of ∼0.5 and one monolayer of Li⁰ on a preadsorbed EC adlayer leads not only to stabilization of Li⁺/Li^δ+ at the surface, possibly as adsorbed Li⁺(EC) _n species, but also to EC decomposition, forming products such as Li₂CO₃, ROCO₂Li (CH₂OCO₂Li)₂, and Li₂O. Consequences on the electronic surface properties and on the stabilization of the resulting adlayer are discussed. Upon annealing up to room temperature, some residual Li-containing decomposition products remain on the surface, which is considered as the initial stage of the solid|electrolyte interphase formation at the electrode|electrolyte interface.

Image potential states from the van der Waals density functional

The image potential state is one of the fundamental surface electronic states and has a great relevance to many surface phenomena, but its accurate description is a great challenge for the semilocal density functional. Here, we use the nonlocal van der Waals density functional to describe the image potential states of graphene, graphite, and carbon nanotubes. We found that although it does not yield the correct image potential outside the surface, the van der Waals density functional improves the description of image potential states because of the nonlocal correlation potential. Our study demonstrates the usefulness of the van der Waals density functional to study the surface electronic properties.

Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films

We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS₂ films. Scanning tunneling microscopy, Kelvin probe force microscopy, and transmission electron microscopy were used to obtain high resolution images and quantitative measurements of the local density of states, work function and nature of defects in MoS₂ films. We track the evolution of defects that are formed under heating and electron beam irradiation. We observe formation of metastable domains with different work function values after annealing the material in ultra-high vacuum to moderate temperatures. We attribute these metastable values of the work function to evolution of crystal defects forming during the annealing. The experiments show that sulfur vacancies formed after exposure to elevated temperatures diffuse, coalesce, and migrate bringing the system from a metastable to equilibrium ground state. The process could be thermally or e-beam activated with estimated energy barrier for sulfur vacancy migration of 0.6 eV in single unit cell MoS₂. Even at equilibrium conditions, the work function and local density of states values are strongly affected near grain boundaries and edges. The results provide initial estimates of the thermal budgets available for reliable fabrication of MoS₂-based integrated electronics and indicate the importance of defect control and layer passivation.

Geometric and electronic structure of multilayered graphene: synergy of the nondirective ripples and the number of layers

According to the Mermin-Wagner theorem, ripple deformation is ubiquitous in a two-dimensional (2D) free-standing sheet, influencing the electronic properties. However, the synergistic effects of the unrestricted ripples and the number of layers have still been a topic of extensive debate. To address this issue, we employed density functional theory including many-body van der Waals (vdW) correction to investigate the effects of the nondirective ripples on the geometric and electronic structures of multilayered graphene. We found that the many-body effects of vdW forces were essential for the binding of multilayered rippled graphene. The increase of curvature affects the electronic structures of rippled graphene by modifying stacking modes, while the increase in the number of layers can reduce band gap and work function directly. The coupling of these two effects can enhance the chemical activity of rippled graphene. Our results facilitate new insights into the geometric and electronic properties of rippled graphene, which can be generalized to other layered materials.

Direct Observation of Plasmon-Induced Interfacial Charge Separation in Metal/Semiconductor Hybrid Nanostructures by Measuring Surface Potentials

Plasmon-induced interfacial charge separation (PICS) is one of the key processes responsible for the improved conversion efficiencies of energy-harvesting devices that incorporate metal nanostructures. In this Letter, we reveal a mechanism of PICS by visualizing (with nanometer-scale resolution) and characterizing plasmon-exciton coupling between p-type poly(pyrrole) (PPy) nanowires (NWs) and Ag nanoparticles (NPs) using light-irradiated Kelvin probe force microscopy (KPFM). Under blue-light irradiation, the Ag NPs are expected to donate electrons to the PPy NWs via a hot electron injection process. However, in this Letter, we observe that under blue-light irradiation the plasmonically and excitonically excited electrons in the semiconductor back-transfer to the metal. The PICS in this system can be explained by comparing it with a similar one where Au NPs are attached to n-type ZnO NWs; we observed a net electron transfer from the Au NPs to the ZnO NWs (an upward band bending is formed at the interface of the two materials, presumably obstructing electron back-transfer). Indeed, energy band matching between the metal and the semiconductor components of hybrid nanostructures influences PICS pathways. These experimental findings and our proposed mechanism consistently explain the PICS occurring in the PPy NW-Ag NP system with important implications on explaining their cooperative optoelectronic activities.

Design and adjustment of the graphene work function via size, modification, defects, and doping: a first-principle theory study

In this work, the work function (WF) of graphenes, which are used as electronic devices, has been designed and evaluated by using the first-principle approach. Different states of graphene were considered, such as surface modification, doping, and defects. Firstly, WF strongly depends on the width of pristine graphene. A bigger width leads to a smaller WF. In addition, the effects of hydroxyls, defects, and positions of hydroxyls and defects are of concern. The WF of the graphene which is modified with hydroxyls is bigger than that of the pristine graphene. Moreover, the WF value increases with the number of hydroxyls. Positions of the hydroxyls and defects that deviated from the center have limited influence on the WF, whereas the effect of the position in the center is substantial. Lastly, B, N, Al, Si, and P are chosen as the doping elements. The n-type graphene doped with N and P atoms results in a huge decline in the WF, whereas the p-type graphene doped with B and Al atoms causes a great increase in the WF. However, the doping of Al in graphene is difficult, whereas the doping of B and N is easier. These discoveries will provide heavy support for the production of graphene-based devices.

Impact of room temperature on pentacene thin film growth and electronic structure

The electronic structure and transport properties of organic thin films depend critically on the film structure. We have shown by means of ultraviolet photoelectron spectroscopy that the growth of vacuum-sublimed pentacene on highly oriented pyrolytic graphite substrates depends significantly on the room temperature and the substrate cleanness. At T = 291 K, all molecules adopt a flat lying orientation in the contact layer to a clean (vacuum-annealed) substrate, whereas at T = 303 K, some molecules are standing upright. On defect-rich substrates, the thin films are rather disordered for both temperatures and comprise standing and lying molecules.

ITO Modification for Efficient Inverted Organic Solar Cells

We demonstrate a facile approach to designing transparent electron-collecting electrodes by depositing thin layers of medium and low work function metals on top of transparent conductive metal oxides (TCOs) such as ITO and FTO. The modified electrodes were fairly stable for months under ambient conditions and maintained their electrical characteristics. XPS spectroscopy data strongly suggested integration of the deposited metal in the TCO structure resulting in additional doping of the conducting oxide at the interface. Kelvin probe microscopy measurements revealed a significant decrease in the ITO work function after modification. Organic solar cells based on three different conjugated polymers have demonstrated state of the art performances in inverted device geometry using Mg- or Yb-modified ITO as electron collecting electrode. The simplicity of the proposed approach and the excellent ambient stability of the modified ITO electrodes allows one to expect their wide utilization in research laboratories and electronic industry.

Graphene-Anchored p-Type CuBO2 Nanocrystals for a Transparent Cold Cathode

CuBO₂ nanostructures were synthesized by employing a low-cost hydrothermal technique to combine into the CuBO₂-RGO nanocomposite for the first time using chemically prepared graphene sheets. The nanohybrid samples were characterized for structural information using X-ray diffraction (XRD) that revealed the proper crystalline phase formation of CuBO₂ unaltered by composite formation with graphene. Raman spectroscopic studies were employed to confirm the presence of graphene. A morphological study with field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) suggested the proper wrapping of RGO sheets over CuBO₂ nanocubes. Moreover, the close proximity of lattice planes of CuBO₂ and RGO to each other was observed in high-resolution TEM studies that were correlated with the Raman spectroscopic studies. Finally, the samples were characterized to study the field emission (FE) properties of the same using a laboratory-made high-vacuum field-emission setup. Finite-element-based theoretical simulation studies were carried out to explain and compare the field emission properties with the experimental results. The FE properties of the composite samples were found to be tuned by the nature of wrapping the RGO sheets over the CuBO₂ nanocubes, which was typically dependent upon the spiky morphology of the nanocubes.

Work function characterization of directionally solidified LaB6-VB2 eutectic

With its low work function and high mechanical strength, the LaB₆/VB₂ eutectic system is an interesting candidate for high performance thermionic emitters. For the development of device applications, it is important to understand the origin, value, and spatial distribution of the work function in this system. Here we combine thermal emission electron microscopy and low energy electron microscopy with Auger electron spectroscopy and physical vapor deposition of the constituent elements to explore physical and chemical conditions governing the work function of these surfaces. Our results include the observation that work function is lower (and emission intensity is higher) on VB₂ inclusions than on the LaB₆ matrix. We also observe that the deposition of atomic monolayer doses of vanadium results in surprisingly significant lowering of the work function with values as low as 1.1eV.

Solution-based electrical doping of semiconducting polymer films over a limited depth

Solution-based electrical doping protocols may allow more versatility in the design of organic electronic devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability has proven challenging. Here we present a solution-based approach for electrical p-doping of films of donor conjugated organic semiconductors and their blends with acceptors over a limited depth with a decay constant of 10-20 nm by post-process immersion into a polyoxometalate solution (phosphomolybdic acid, PMA) in nitromethane. PMA-doped films show increased electrical conductivity and work function, reduced solubility in the processing solvent, and improved photo-oxidative stability in air. This approach is applicable to a variety of organic semiconductors used in photovoltaics and field-effect transistors. PMA doping over a limited depth of bulk heterojunction polymeric films, in which amine-containing polymers were mixed in the solution used for film formation, enables single-layer organic photovoltaic devices, processed at room temperature, with power conversion efficiencies up to 5.9 ± 0.2% and stable performance on shelf-lifetime studies at 60 °C for at least 280 h.

Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

The work function of few-layer graphene

A theoretical and experimental study of the work function of few-layer graphene is reported. The influence of the number of layers on the work function is investigated in the presence of a substrate, a molecular dipole layer, and combinations of the two. The work function of few-layer graphene is almost independent of the number of layers with only a difference between monolayer and multilayer graphene of about 60 meV. In the presence of a charge-donating substrate the charge distribution is found to decay exponentially away from the substrate and this is directly reflected in the work function of few-layer graphene. A dipole layer changes the work function only when placed in between the substrate and few-layer graphene through a change of the charge transfer between the two.

Lewis Basicity of Nitrogen-Doped Graphite Observed by CO2 Chemisorption

The characteristics of CO2 adsorption sites on a nitrogen-doped graphite model system (N-HOPG) were investigated by X-ray photoelectron and absorption spectroscopy and infrared reflection absorption spectroscopy. Adsorbed CO2 was observed lying flat on N-HOPG, stabilized by a charge transfer from the substrate. This demonstrated that Lewis base sites were formed by the incorporation of nitrogen via low-energy nitrogen-ion sputtering. The possible roles of twofold coordinated pyridinic N and threefold coordinated valley N (graphitic N) sites in Lewis base site formation on N-HOPG are discussed. The presence of these nitrogen species focused on the appropriate interaction strength of CO2 indicates the potential to fine-tune the Lewis basicity of carbon-based catalysts.

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS₂) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS₂ negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

Tuning the electronic properties and work functions of graphane/fully hydrogenated h-BN heterobilayers via heteronuclear dihydrogen bonding and electric field control

Using density functional theory calculations with van der Waals correction, we show that the electronic properties (band gap and carrier mobility) and work functions of graphane/fully hydrogenated hexagonal boron nitride (G/fHBN) heterobilayers can be favorably tuned via heteronuclear dihydrogen bonding (C-HH-B and C-HH-N) and an external electric field. Our results reveal that G/fHBN heterobilayers have different direct band gaps of ∼1.2 eV and ∼3.5 eV for C-HH-B and C-HH-N bonds, respectively. In particular, these band gaps can be effectively modulated by altering the direction and strength of the external electric field (E-field), and correspondingly exhibit a semiconductor-metal transition. The conformation and stability of G/fHBN heterobilayers show a strong dependence on the heteronuclear dihydrogen bonding. Fantastically, these bonds are stable enough under a considerable external E-field as compared with other van der Waals (vdW) 2D layered materials. The mobilities of G/fHBN heterobilayers we predicted are hole-dominated, reasonably high (improvable up to 200 cm(2) V(-1) s(-1)), and extremely isotropic. We also demonstrate that the work function of G/fHBN heterobilayers is very sensitive to the external E-field and is extremely low. These findings make G/fHBN heterobilayers very promising materials for field-effect transistors and light-emitting devices, and inspire more efforts in the development of 2D material systems using weak interlayer interactions and electric field control.

Simultaneous cross-linking and p-doping of a polymeric semiconductor film by immersion into a phosphomolybdic acid solution for use in organic solar cells

Simultaneous cross-linking and p-doping of a polymeric semiconductor film was achieved by immersion into a phosphomolybdic acid solution for use in organic solar cells.

Nanoscale measurements of unoccupied band dispersion in few-layer graphene

The properties of any material are fundamentally determined by its electronic band structure. Each band represents a series of allowed states inside a material, relating electron energy and momentum. The occupied bands, that is, the filled electron states below the Fermi level, can be routinely measured. However, it is remarkably difficult to characterize the empty part of the band structure experimentally. Here, we present direct measurements of unoccupied bands of monolayer, bilayer and trilayer graphene. To obtain these, we introduce a technique based on low-energy electron microscopy. It relies on the dependence of the electron reflectivity on incidence angle and energy and has a spatial resolution ∼10 nm. The method can be easily applied to other nanomaterials such as van der Waals structures that are available in small crystals only.

Highly photosensitive graphene field-effect transistor with optical memory function

Graphene is a promising material for use in photodetectors for the ultrawide wavelength region: from ultraviolet to terahertz. Nevertheless, only the 2.3% light absorption of monolayer graphene and fast recombination time of photo-excited charge restrict its sensitivity. To enhance the photosensitivity, hybridization of photosensitive material and graphene has been widely studied, where the accumulated photo-excited charge adjacent to the graphene channel modifies the Fermi level of graphene. However, the charge accumulation process slows the response to around a few tens of seconds to minutes. In contrast, a charge accumulation at the contact would induce the efficient light-induced modification of the contact resistance, which would enhance its photosensitivity. Herein, we demonstrate a highly photosensitive graphene field-effect transistor with noise-equivalent power of ~3 × 10⁻¹⁵ W/Hz^1/2 and with response time within milliseconds at room temperature, where the Au oxide on Au electrodes modulates the contact resistance because of the light-assisted relaxation of the trapped charge at the contact. Additionally, this light-induced relaxation imparts an optical memory function with retention time of ~5 s. These findings are expected to open avenues to realization of graphene photodetectors with high sensitivity toward single photon detection with optical memory function.

Engineering Ultra-Low Work Function of Graphene

Low work function materials are critical for energy conversion and electron emission applications. Here, we demonstrate for the first time that an ultralow work function graphene is achieved by combining electrostatic gating with a Cs/O surface coating. A simple device is built from large-area monolayer graphene grown by chemical vapor deposition, transferred onto 20 nm HfO2 on Si, enabling high electric fields capacitive charge accumulation in the graphene. We first observed over 0.7 eV work function change due to electrostatic gating as measured by scanning Kelvin probe force microscopy and confirmed by conductivity measurements. The deposition of Cs/O further reduced the work function, as measured by photoemission in an ultrahigh vacuum environment, which reaches nearly 1 eV, the lowest reported to date for a conductive, nondiamond material.

Tuning the catalytic activity of graphene nanosheets for oxygen reduction reaction via size and thickness reduction

Currently, the fundamental factors that control the oxygen reduction reaction (ORR) activity of graphene itself, in particular, the dependence of the ORR activity on the number of exposed edge sites remain elusive, mainly due to limited synthesis routes of achieving small size graphene. In this work, the synthesis of low oxygen content (<2.5±0.2 at. %), few layer graphene nanosheets with lateral dimensions smaller than a few hundred nanometers were achieved using a combination of ionic liquid assisted grinding of high purity graphite coupled with sequential centrifugation. We show for the first time that the graphene nanosheets possessing a plethora of edges exhibited considerably higher electron transfer numbers compared to the thicker graphene nanoplatelets. This enhanced ORR activity was accomplished by successfully exploiting the plethora of edges of the nanosized graphene as well as the efficient electron communication between the active edge sites and the electrode substrate. The graphene nanosheets were characterized by an onset potential of -0.13 V vs Ag/AgCl and a current density of -3.85 mA/cm2 at -1 V, which represent the best ORR performance ever achieved from an undoped carbon based catalyst. This work demonstrates how low oxygen content nanosized graphene synthesized by a simple route can considerably impact the ORR catalytic activity and hence it is of significance in designing and optimizing advanced metal-free ORR electrocatalysts.

Effect of dispersion on surface interactions of cobalt(ii) octaethylporphyrin monolayer on Au(111) and HOPG(0001) substrates: a comparative first principles study

Implication of dispersion interactions on geometric, adsorption and electronic properties of porphyrin monolayer on conductive surfaces using density functional theory.

Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

Single- and multilayer graphene and highly ordered pyrolytic graphite (HOPG) were exposed to a pure hydrogen low-temperature plasma (LTP). Characterizations include various experimental techniques such as photoelectron spectroscopy, Raman spectroscopy and scanning probe microscopy. Our photoemission measurement shows that hydrogen LTP exposed HOPG has a diamond-like valence-band structure, which suggests double-sided hydrogenation. With the scanning tunneling microscopy technique, various atomic-scale charge-density patterns were observed, which may be associated with different C-H conformers. Hydrogen-LTP-exposed graphene on SiO(2) has a Raman spectrum in which the D peak to G peak ratio is over 4, associated with hydrogenation on both sides. A very low defect density was observed in the scanning probe microscopy measurements, which enables a reverse transformation to graphene. Hydrogen-LTP-exposed HOPG possesses a high thermal stability, and therefore, this transformation requires annealing at over 1000 °C.

Free-standing graphene on microstructured silicon vertices for enhanced field emission properties

Controlled deposition of graphene in different orientations relative to the substrate is challenging and majority of existing deposition methods lead to sheets that lay flat on the substrate surface, limiting the potential applications in which the exposed sheet surface area and the atomically thin edges of graphene are exploited. Here we describe a simple and general solution-based methodology for the fabrication of random arrays of free-standing few-layer graphene (FLG) flakes on micro-spikes engraved on Si substrates. This should greatly benefit applications using free-standing graphene, such as in energy storage/conversion devices and bright electron sources. As a proof of concept, it is shown that the FLG sheets protruding on the top of micro-spikes are good electron emitters with turn-on fields as low as 2.3 V μm(-1) and field enhancement of few thousands. The emission performance and long-term stability achieved by this hierarchical deposition process are superior to that of planar graphene sheets and demonstrate promise for applications. Mechanisms leading to formation of free-standing FLG flakes are discussed.

Water-gated charge doping of graphene induced by mica substrates

We report on the existence of water-gated charge doping of graphene deposited on atomically flat mica substrates. Molecular films of water in units of ~0.4 nm thick bilayers were found to be present in regions of the interface of graphene/mica heterostacks prepared by micromechanical exfoliation of kish graphite. The spectral variation of the G and 2D bands, as visualized by Raman mapping, shows that mica substrates induce strong p-type doping in graphene with hole densities of (9 ± 2) × 10(12) cm(-2). The ultrathin water films, however, effectively block interfacial charge transfer, rendering graphene significantly less hole-doped. Scanning Kelvin probe microscopy independently confirmed a water-gated modulation of the Fermi level by 0.35 eV, which is in agreement with the optically determined hole density. The manipulation of the electronic properties of graphene demonstrated in this study should serve as a useful tool in realizing future graphene applications.

Ultra-thin graphene edges at the nanowire tips: a cascade cold cathode with two-stage field amplification

A multistage field emitter based on graphene-linked ZnO nanowire array is realized by means of spin-coating a graphene dispersion (reduced graphene oxide) over a nanostructured platform followed by plasma modification. Spin-coating leads to interlinking of graphene sheets between the neighboring nanowires whereas plasma etching in the subsequent step generates numerous ultra-sharp graphene edges at the nanowire tips. The inherent tendency of graphene to lay flat over a plane substrate can easily be bypassed through the currently presented nanostructure platform based technique. The turn-on and threshold field significantly downshifted compared to the individual components in the cascade emitter. Through the facile electron transfer from nanowires to graphene due to band bending at the ZnO-graphene interface together with multistage geometrical field enhancement at both the nanowire and graphene edges remain behind this enriched field emission from the composite cold cathode. This strategy will open up a new direction to integrate the functionalities of both the graphene array and several other inorganic nanostructure array for practical electronic devices.

Hierarchical graphene nanocones over 3D platform of carbon fabrics: a route towards fully foldable graphene based electron source

A three dimensional field emitter comprising hierarchical nanostructures of graphene over flexible fabric substrate is presented. The nanostructuring is realized through plasma treatment of graphene, coaxially deposited over individual carbon fiber by means of simple aqueous phase electrophoretic deposition technique. Hierarchical graphene nanocone, acting as a cold electron emitter, exhibits outstanding electron emission performance with a turn-on field as low as 0.41 V μm(-1) and a threshold field down to 0.81 V μm(-1). Electric field modification around the special woven like geometry of the underlying base fabric substrate serves as the booster to the nanostructured graphene related field amplification at the electron emission site. Superb robustness in the emission stability can be attributed to suppressed joule heating on behalf of higher inborn accessible surface area of graphene nanocone as well as excellent electrical and thermal conductivity of both the graphene and carbon fabrics. Superior flexibility of this high-performance graphene based emitter ensures their potential use in completely foldable and wearable field emission devices.