Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductors

Ultrastrong Coupling between Polar Distortion and Optical Properties in Ferroelectric MoBr2O2

Tuning the properties of materials by using external stimuli is crucial for developing versatile smart materials. Strong coupling among the order parameters within a single-phase material constitutes a potent foundation for achieving precise property control. However, cross-coupling is fairly weak in most single materials. Leveraging first-principles calculations, we demonstrate a layered mixed anion compound MoBr2O2 that exhibits electric-field switchable spontaneous polarization and ultrastrong coupling between polar distortion and electronic structures as well as optical properties. It offers feasible avenues of achieving tunable Rashba spin-splitting, electrochromism, thermochromism, photochromism, and nonlinear optics by applying an external electric field to a single domain sample and heating, as well as intense light illumination. Additionally, it exhibits an exceptionally large photostrictive effect. These findings not only showcase the feasibility of achieving multiple order parameter coupling within a single material but also pave the way for comprehensive applications based on property control, such as energy harvesting, information processing, and ultrafast control.

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe₂ grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe₂ layer produced via vdW epitaxy. This is confirmed by in-plane X-ray diffraction. The single layer of WSe₂ and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe₂ band dispersion and a high p-doping coming from the charge transfer between the WSe₂ monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe₂. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe₂. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshift of about 0.56 eV toward the Fermi level with respect to the VBM of the WSe₂ on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.

On the origin of the electron accumulation layer at clean InAs(111) surfaces

In this paper, we provide a comprehensive theoretical analysis of the electronic structure of InAs(111) surfaces with special attention paid to the energy region close to the fundamental bandgap. Starting from the bulk electronic structure of InAs calculated using the PBE functional with the inclusion of Hubbard correction and spin-orbit coupling, we derive proper values for the bandgap, split-off energy, as well as effective electron, light-hole and heavy-hole masses in full consistent with the available experimental results. Besides that we address the projected density of states associated with p orbitals of bulk indium and arsenic atoms. On the basis of optimized atomic surfaces we recover scanning tunneling microscopy images and calculate the band structure and orbital distributions of surface atoms, which along with accessible experimental data make it possible to speculate on the formation of the electron accumulation layer for both As- and In-terminated InAs(111) surfaces. Moreover, these results are accompanied by charge density distribution simulations.

Quantum confinement in group III-V semiconductor 2D nanostructures

In this work we investigate the role of quantum confinement in group III-V semiconductor thin films (2D nanostructures). To this end we have studied the electronic structure of nine materials (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb) by means of Density Functional Theory (DFT) calculations using a screened hybrid functional (HSE06). We focus on the structural and electronic properties of bulk and the (110) surfaces, for which we evaluate and rationalize the impact of system size to the band gap and band edge positions. Our results indicate that when the quantum confinement is strong, it mainly affects the position of the Conduction Band Minimum (CBM) of the semiconductor, while the Valence Band Maximum (VBM) is almost insensitive to the system size. The results can be rationalized in terms of electron and hole effective masses. Our conclusions, based on slabs, can be generalized to other cases of quantum confinement such as quantum dots, overcoming the need for an explicit consideration and calculation of the properties of semiconductor nanoparticles.

Spatiotemporal Spin Noise Spectroscopy

We report on the potential of a new spin noise spectroscopy approach by demonstrating all-optical probing of spatiotemporal spin fluctuations. This is achieved by homodyne mixing of a spatially phase-modulated local oscillator with spin-flip scattered light, from which the frequency and wave vector dependence of the spin noise power is unveiled. As a first application of the method we measure the spatiotemporal spin noise in weakly n-doped CdTe layers, from which the electron spin diffusion constant and spin relaxation rates are determined. The absence of spatial spin correlations is also shown for this particular system.

Theoretical study of nitride short period superlattices

Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

Defect introduced paramagnetism and weak localization in two-dimensional metal VSe2

We have carried out a detailed investigation of the magnetism, valence state, and magnetotransport in VSe₂ bulk single crystals, as well as in laminates obtained by mechanical exfoliation. In sharp contrast to the ferromagnetic behavior reported previously, here, no ferromagnetism could be detected for VSe₂ single crystal and laminate from room temperature down to 2 K. Neither did we find the Curie paramagnetism expected due to the 3d ¹ odd-electronic configuration of covalent V⁴⁺ ions. Rather, intrinsic VSe₂ is a non-magnetic alloy without local moment. Only a weak paramagnetic contribution introduced by defects is noticeable below 50 K. A weak localization effect due to defects was also observed in VSe₂ single crystals for the first time.

Band gap engineering of In(Ga)N/GaN short period superlattices

Discussion of band gap behavior based on first principles calculations of the electronic band structures for several InN/GaN superlattices (SLs) (free-standing and pseudomorphic) grown along different directions (polar and nonpolar) is presented. Taking into account the dependence on internal strain and lattice geometry mainly two factors influence the dependence of the band gap, E g on the layer thickness: the internal electric field and the hyb wells) is more important. We also consider mIn ridization of well and barrier wave functions. We illustrate their influence on the band gap engineering by calculating the strength of built-in electric field and the oscillator strength. It appears that there are two interesting ranges of layer thicknesses. In one the influence of the electric field on the gaps is dominant (wider wells), whereas in the other the wave function hybridization (narrow wells) is more important. We also consider mIn 0.33 Ga 0.67 N/nGaN SLs, which seem to be easier to fabricate than high In content quantum wells. The calculated band gaps are compared with recent experimental data. It is shown that for In(Ga)N/GaN superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary InGaN alloys.

Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells

We demonstrate theoretically that interface engineering can drive germanium, one of the most commonly used semiconductors, into a topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which leads to a topological insulator transition. Our work provides a new method to realize topological insulators in commonly used semiconductors and suggests a promising approach to integrate it in well-developed semiconductor electronic devices.

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces

The in-plane optical anisotropy (IPOA) in InAs/GaSb superlattices has been studied by reflectance difference spectroscopy (RDS) at different temperatures ranging from 80 to 300 K. We introduce alternate GaAs- and InSb-like interfaces (IFs), which cause the symmetry reduced from D 2d to C 2v . IPOA has been observed in the (001) plane along [110] and [1[Formula: see text]0] axes. RDS measurement results show strong anisotropy resonance near critical point (CP) energies of InAs and GaSb. The energy positions show red shift and RDS intensity decreases with the increasing temperature. For the superlattice sample with the thicker InSb-like IFs, energy positions show red shift, and the spectra exhibit stronger IPOA. The excitonic effect is clearly observed by RDS at low temperatures. It demonstrates that biaxial strain results in the shift of the CP energies and IPOA is enhanced by the further localization of the carriers in InSb-like IFs.

In-plane uniaxial magnetic anisotropy in (Ga, Mn)As due to local lattice distortions around Mn²⁺ ions

We theoretically investigate the interplay between local lattice distortions around the Mn(2+) impurity ion and its magnetization, mediated through spin-orbit coupling of holes. We show that the tetrahedral symmetry around the Mn(2+) ion is spontaneously broken and that local Jahn-Teller distortions coupled with growth strain result in uniaxial magnetic anisotropy. We also account for the experimentally observed in-plane uniaxial magnetic anisotropy rotation due to variation of hole density. According to this model, lack of inversion and top-down symmetries of (Ga, Mn)As layers lead to in-plane biaxial symmetry breaking in the presence of Jahn-Teller distortions.

Spin-splitting calculation for zincblende semiconductors using an atomic bond-orbital model

We develop a 16-band atomic bond-orbital model (16ABOM) to compute the spin splitting induced by bulk inversion asymmetry in zincblende materials. This model is derived from the linear combination of atomic-orbital (LCAO) scheme such that the characteristics of the real atomic orbitals can be preserved to calculate the spin splitting. The Hamiltonian of 16ABOM is based on a similarity transformation performed on the nearest-neighbor LCAO Hamiltonian with a second-order Taylor expansion k at the Γ point. The spin-splitting energies in bulk zincblende semiconductors, GaAs and InSb, are calculated, and the results agree with the LCAO and first-principles calculations. However, we find that the spin-orbit coupling between bonding and antibonding p-like states, evaluated by the 16ABOM, dominates the spin splitting of the lowest conduction bands in the zincblende materials.

Spin-orbit-mediated manipulation of heavy-hole spin qubits in gated semiconductor nanodevices

A novel spintronic nanodevice is proposed that is able to manipulate the single heavy-hole spin state in a coherent manner. It can act as a single quantum logic gate. The heavy-hole spin transformations are realized by transporting the hole around closed loops defined by metal gates deposited on top of the nanodevice. The device exploits Dresselhaus spin-orbit interaction, which translates the spatial motion of the hole into a rotation of the spin. The proposed quantum gate operates on subnanosecond time scales and requires only the application of a weak static voltage which allows for addressing heavy-hole spin qubits individually. Our results are supported by quantum mechanical time-dependent calculations within the four-band Luttinger-Kohn model.

Rh2O3 versus IrO2: relativistic effects and the stability of Ir4+

Despite the wide-ranging applications of binary Rh and Ir oxides, their stability and trends in Rh and Ir oxidation states are not fully understood. Using first-principles electronic structure calculations, we demonstrate that the origin of the categorical stability of Ir(4+) is the relativistic contraction of the 6s orbital and, consequently, an expansion of 5d orbitals. Relativistic effects significantly stabilize Ir(4+)-containing metallic rutile IrO(2) over a wide range of O chemical potentials, despite the choice that Ir has of forming semiconducting corundum Ir(2)O(3). In contrast, Rh is found to display a wider stability range for corundum Rh(2)O(3) with Rh(3+) and a greater propensity for multiple oxidation states.

Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling

We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches: an analytical diffusive-evolution calculation and a numerical finite-size scaling study of the spin-relaxation time.

Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer

Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin-orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect. Owing to the combination of spin-orbit and exchange interactions, we show that an electric current flowing in the plane of a Co layer with asymmetric Pt and AlO(x) interfaces produces an effective transverse magnetic field of 1 T per 10(8) A cm(-2). Besides its fundamental significance, the high efficiency of this process makes it a realistic candidate for room-temperature spintronic applications.

Discovery of a novel linear-in-k spin splitting for holes in the 2D GaAs/AlAs system

The spin-orbit interaction generally leads to spin splitting (SS) of electron and hole energy states in solids, a splitting that is characterized by a scaling with the wave vector k. Whereas for 3D bulk zinc blende solids the electron (heavy-hole) SS exhibits a cubic (linear) scaling with k, in 2D quantum wells, the electron (heavy-hole) SS is currently believed to have a mostly linear (cubic) scaling. Such expectations are based on using a small 3D envelope function basis set to describe 2D physics. By treating instead the 2D system explicitly as a system in its own right, we discover a large linear scaling of hole states in 2D. This scaling emerges from coupling of hole bands that would be unsuspected by the standard model that judges coupling by energy proximity. This discovery of a linear Dresselhaus k scaling for holes in 2D implies a different understanding of hole physics in low dimensions.

Full-zone spin splitting for electrons and holes in bulk GaAs and GaSb

The spin-orbit interaction-a fundamental electroweak force-is equivalent to an effective magnetic field intrinsic to crystals, leading to band spin splitting for certain k points in sufficiently low-symmetry structures. This (Dresselhaus) splitting has usually been calculated at restricted regions in the Brillouin zone via small wave vector approximations (e.g., k.p), potentially missing the "big picture." We provide a full-zone description of the Dresselhaus splitting in zinc blende semiconductors by using pseudopotentials, empirically corrected to rectify local density approximation errors by fitting GW results. In contrast to what was previous thought, we find that the largest spin splitting in the lowest conduction band and upper valence band (VB1) occurs surprisingly along the (210) direction, not the (110) direction, and that the splitting of the VB1 is comparable to that of the next two valence bands VB2 and VB3.

Semiconductor spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry—giant magnetoresistance systems are used as hard disk read heads—semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.

Spin relaxation by transient monopolar and bipolar optical orientation

We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps.

Ab initio prediction of conduction band spin splitting in zinc blende semiconductors

We use a recently developed self-consistent GW approximation to present systematic ab initio calculations of the conduction band spin splitting in III-V and II-VI zinc blende semiconductors. The spin-orbit interaction is taken into account as a perturbation to the scalar relativistic Hamiltonian. These are the first calculations of conduction band spin splittings based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. The results are compared to the few available experimental data and a previous calculation based on a model one-particle potential. We also briefly address the widely used k x p parametrization in the context of these results.

Spin-induced forbidden evanescent states in III-V semiconductors

Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist evanescent states which govern charge transport such as tunneling. In this Letter, we address the issue of their spin dependence in III-V semiconductors. Taking into account the spin-orbit interaction, we treat the problem using a k . p 14 x 14 Hamiltonian that we numerically compute for GaAs. Our results show that the removed spin degeneracy in the band gap can lead to giant energy splittings and induces forbidden zones in space where evanescent states are suppressed.

Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields

Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent drift and/or diffusion is controlled with electric, magnetic, and--in particular--strain fields. Spin precession induced by controlled uniaxial stress along the <110> axes demonstrates the direct k-linear spin-orbit coupling of electron spin to the shear (off diagonal) components of the strain tensor, epsilon(xy).

Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors

We show that one-photon absorption of linearly polarized light should produce pure spin currents in noncentrosymmetric semiconductors, including even bulk GaAs. We present 14x14 k.p model calculations of the effect in GaAs, including strain, and pseudopotential calculations of the effect in wurtzite CdSe.

EPR and ferromagnetism in diluted magnetic semiconductor quantum wells

Motivated by recent measurements of electron paramagnetic resonance spectra in modulation-doped CdMnTe quantum wells [Phys. Rev. Lett. 91, 077201 (2003)]], we develop a theory of collective spin excitations in quasi-two-dimensional diluted magnetic semiconductors. Our theory explains the anomalously large Knight shift found in these experiments as a consequence of collective coupling between Mn-ion local moments and itinerant-electron spins. We use this theory to discuss the physics of ferromagnetism in (II,Mn)VI quantum wells and to speculate on the temperature at which it is likely to be observed in n-type modulation-doped systems.

Strong linear- k valence-band mixing at semiconductor heterojunctions

This paper examines linear- k terms in the gamma(8) valence-band Hamiltonian for heterostructures of zinc-blende-type semiconductors. In bulk crystals such terms are known to be extremely small, due to their origin as relativistic perturbations from d and f orbitals. However, in heterostructures there is a nonvanishing contribution from p orbitals. This contribution is an order of magnitude larger than the corresponding bulk term, and it should give rise to an optical anisotropy comparable to (although smaller than) that seen in recent experiments on the quantum-well Pockels effect.