1
|
Beiranvand A, Liedke MO, Haalisto C, Lähteenlahti V, Schulman A, Granroth S, Palonen H, Butterling M, Wagner A, Huhtinen H, Paturi P. Tuned AFM-FM coupling by the formation of vacancy complex in Gd 0.6Ca 0.4MnO 3thin film lattice. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:255803. [PMID: 33878744 DOI: 10.1088/1361-648x/abf9ba] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2021] [Accepted: 04/20/2021] [Indexed: 06/12/2023]
Abstract
The effect ofin situoxygen and vacuum annealings on the low bandwidth manganite Gd1-xCaxMnO3(GCMO) thin film withx= 0.4 was investigated. Based on the magnetic measurements, the AFM-FM coupling is suppressed by the vacuum annealing treatment via destroying the double exchange interaction and increasing the unit cell volume by converting the Mn4+to the Mn3+. Consequently, resistance increases significantly compared to pristine film. The results are explained by a model obtained from the positron annihilation studies, where the vacuum annealing increased the annihilation lifetime in A and B sites due to the formation of vacancy complexesVA,B-VO, which was not the case in the pristine sample. The positron annihilation analysis indicated that most of the open volume defects have been detected in the interface region rather than on the subsurface layer and this result is confirmed by detailed x-ray reflection analysis. On the other hand, the effect of oxygen annealing on the unit cell volume and magnetization was insignificant. This is in agreement with positron annihilation results which demonstrated that the introduction of oxygen does not change the number of cation vacancies significantly. This work demonstrates that the modification of oxygen vacancies and vacancy complexes can tune magnetic and electronic structure of the epitaxial thin films to provide new functionalities in future applications.
Collapse
Affiliation(s)
- A Beiranvand
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - M O Liedke
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - C Haalisto
- Laboratory of Materials Science, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - V Lähteenlahti
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - A Schulman
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - S Granroth
- Laboratory of Materials Science, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - H Palonen
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - M Butterling
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - A Wagner
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - H Huhtinen
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - P Paturi
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| |
Collapse
|
2
|
Dong B, Liu T, Li C, Zhang F. Species, engineering and characterizations of defects in TiO 2 -based photocatalyst. CHINESE CHEM LETT 2018. [DOI: 10.1016/j.cclet.2017.12.002] [Citation(s) in RCA: 52] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
|
3
|
Makkonen I, Korhonen E, Prozheeva V, Tuomisto F. Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:224002. [PMID: 26952670 DOI: 10.1088/0953-8984/28/22/224002] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.
Collapse
Affiliation(s)
- Ilja Makkonen
- Department of Applied Physics, Aalto University School of Science, PO Box 14100, FI-00076 Aalto, Espoo, Finland
| | | | | | | |
Collapse
|
4
|
Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations. Sci Rep 2016; 6:20641. [PMID: 26860684 PMCID: PMC4748320 DOI: 10.1038/srep20641] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2015] [Accepted: 01/07/2016] [Indexed: 11/18/2022] Open
Abstract
Positron annihilation spectroscopy (PAS) was used to examine the effect of defined Cd-rich and Te-rich annealing on point defects in Cl-doped CdTe and Ge-doped CdZnTe semi-insulating single crystals. The as-grown crystals contain open-volume defects connected with Cd vacancies . It was found that the Cd vacancies agglomerate into clusters coupled with Cl in CdTe:Cl, and in CdZnTe:Ge they are coupled with Ge donors. While annealing in Cd pressure reduces of the density, subsequent annealing in Te pressure restores . The CdTe:Cl contains negatively-charged shallow traps interpreted as Rydberg states of A-centres and representing the major positron trapping sites at low temperature. Positrons confined in the shallow traps exhibit lifetime, which is shorter than the CdTe bulk lifetime. Interpretation of the PAS data was successfully combined with electrical resistivity, Hall effect measurements and chemical analysis, and allowed us to determine the principal point defect densities.
Collapse
|
5
|
Edwardson CJ, Coleman PG, Paez DJ, Doylend JK, Knights AP. Direct observation of electron capture and reemission by the divacancy via charge transient positron spectroscopy. PHYSICAL REVIEW LETTERS 2013; 110:136401. [PMID: 23581347 DOI: 10.1103/physrevlett.110.136401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2012] [Indexed: 06/02/2023]
Abstract
Electron capture during forward bias and reemission at zero bias by divacancies in the depletion region of a silicon diode structure at room temperature have been studied for the first time using monoenergetic positrons. The positron response increases essentially linearly with electron current, as a result of increased positron trapping by negatively charged divacancies. The measurements indicate that ≤1% of the divacancies become negatively charged in the steady state at a forward bias of 1 V. Changes in the mean positron response when applying a square wave bias to the sample (1 V forward bias and 0 V, duty cycle 1:4, times at 0 V in the range 0.1-100 μs), were consistent with a rapid conversion of doubly to singly charged divacancies (in ∼10(1) ns), followed by slower defilling of the singly charged divacancies with a time constant of ∼10(1) μs. These ac measurements allow determination of the relative populations of singly and doubly charged divacancies. The results provide confirmation of consistency between the positron's response to the silicon divacancy and previously extracted capture and emission kinetics determined through charge transient measurements and assigned to the same defect. The possibility of combining these two, orthogonal techniques suggest a promising new and powerful approach to defect spectroscopy in which the structure and electrical properties of a defect may be determined in a single measurement.
Collapse
Affiliation(s)
- C J Edwardson
- Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | | | | | | | | |
Collapse
|
6
|
Arutyunov NY, Elsayed M, Krause-Rehberg R, Emtsev VV, Oganesyan GA, Kozlovski VV. Positron annihilation on defects in silicon irradiated with 15 MeV protons. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:035801. [PMID: 23221281 DOI: 10.1088/0953-8984/25/3/035801] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Microstructure and thermal stability of the radiation defects in n-FZ-Si ([P] ≈ 7 × 10(15) cm(-3)) single crystals have been investigated. The radiation defects have been induced by irradiation with 15 MeV protons and studied by means of both the positron lifetime spectroscopy and low-temperature measurements of the Hall effect. At each step of the isochronal annealing over the temperature range ∼60-700 °C the positron lifetime has been measured for the temperature interval ∼30-300 K, and for samples-satellites the temperature dependences of the charge carriers and mobility have been determined over the range ∼4.2-300 K. It is argued that as-grown impurity centers influence the average positron lifetime by forming shallow (E(b) ≈ 0.013 eV) positron states. The radiation-induced defects were also found to trap positrons into weakly bound (E(b) ≤ 0.01 eV) states. These positron states are observed at cryogenic temperatures during the isochronal annealing up to T(anneal.) = 340 °C. The stages of annealing in the temperature intervals ∼60-180 °C and ∼180-260 °C reflect the disappearance of E-centers and divacancies, respectively. Besides these defects the positrons were found to be localized at deep donor centers hidden in the process of annealing up to the temperature T(anneal.) ≈ 300 °C. The annealing of the deep donors occurs over the temperature range ∼300-650 °C. At these centers positrons are estimated to be bound with energies E(b) ≈ 0.096 and 0.021 eV within the temperature intervals ∼200-270 K and ∼166-66 K, respectively. The positron trapping coefficient from these defects increases from ∼1.1 × 10(16) to ∼6.5 × 10(17) s(-1) over the temperature range ∼266-66 K, thus substantiating a cascade phonon-assisted positron trapping mechanism whose efficiency is described by ≈T(-3) law. It is argued that the value of activation energy of the isochronal annealing E(a) ≈ 0.74-0.59 eV is due to dissociation of the positron traps, which is accompanied by restoration of the electrical activity of the phosphorus atoms. The data suggest that the deep donors involve a phosphorus atom and at least two vacancies. Their energy levels are at least at E > E(c) - 0.24 eV in the investigated material.
Collapse
Affiliation(s)
- N Y Arutyunov
- Department of Physics, Martin Luther University Halle, D-06120 Halle, Germany.
| | | | | | | | | | | |
Collapse
|
7
|
Lin YH, Liu YS, Lin YC, Wei YS, Liao KS, Lee KR, Lai JY, Chen HM, Jean YC, Liu CY. Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides. JOURNAL OF APPLIED PHYSICS 2013; 113:33706. [PMID: 23405036 PMCID: PMC3562333 DOI: 10.1063/1.4776781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2012] [Accepted: 01/02/2013] [Indexed: 06/01/2023]
Abstract
The intrinsic oxygen-vacancies and the extrinsic dopants are two major fundamental free-carrier sources for the extrinsic conducting oxides, such as Sn-doped In(2)O(3). Yet, the individual contributions of the above two free-carrier sources to the total carrier concentrations have never been unraveled. A carrier-concentration separation model is derived in this work, which can define the individual contributions to the total carrier concentration from the intrinsic oxygen-vacancies and the extrinsic dopants, separately. The individual contributions obtained from the present carrier-concentration separation model are verified by the two-state trapping model, photoluminescence, and positron annihilation lifetime (PAL) spectroscopy. In addition, the oxygen-vacancy formation energy of the Sn:In(2)O(3) thin film is determined to be 0.25 eV by PAL spectroscopy.
Collapse
|
8
|
Brunner S, Puff W, Mascher P, Balogh A. Microstructural Evolution of Radiation Induced Defects In ZnO During Isochronal Annealing. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-540-207] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractIn this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing. The nominally undoped samples were irradiated either with 3 MeV protons to a fluence of 1.2× 1018 p/cm2 or with 1 MeV electrons to a fluence of 1×1018 e/cm2. The investigation was performed with positron lifetime and Doppler-broadening measurements. The measurements were done at room temperature and in some cases down to 10 K to investigate the thermal dependence of the trapping characteristics of the positrons.
Collapse
|
9
|
Keeble DJ, Wicklein S, Dittmann R, Ravelli L, Mackie RA, Egger W. Identification of A- and B-site cation vacancy defects in perovskite oxide thin films. PHYSICAL REVIEW LETTERS 2010; 105:226102. [PMID: 21231399 DOI: 10.1103/physrevlett.105.226102] [Citation(s) in RCA: 28] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2010] [Indexed: 05/30/2023]
Abstract
Cation vacancies on both sublattices (V(Ti), V(Sr)) have been identified in homoepitaxial pulsed laser deposited SrTiO3 films using high intensity variable energy positron annihilation lifetime spectroscopy (PALS) measurements. Film nonstoichiometry was varied by varying laser fluence. PALS showed that on increasing the fluence above the Ti/Sr∼1 value, the concentration ratio [V(Sr)]/[V(Ti)] systematically increased. Reducing the fluence into the Ti-poor region below resulted in additional vacancy cluster defect formation. Vacancy concentrations greater than ∼50 ppm were observed in all films.
Collapse
Affiliation(s)
- D J Keeble
- Carnegie Laboratory of Physics, School of Engineering, Physics, and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom.
| | | | | | | | | | | |
Collapse
|
10
|
Mäki JM, Tuomisto F, Kelly CJ, Fisher D, Martineau PM. Properties of optically active vacancy clusters in type IIa diamond. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2009; 21:364216. [PMID: 21832322 DOI: 10.1088/0953-8984/21/36/364216] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
In this paper we report on the positron lifetime results obtained for brown and colourless natural diamond. Optical effects of the observed vacancy defects in brown, high pressure, high temperature (HPHT) treated colourless and naturally colourless type IIa diamond samples were studied by combining the positron measurement with monochromatic illumination. Brown diamond was found to contain optically active vacancy clusters (40-60 missing atoms) strongly correlated with the optical absorption spectra. The optical activity of these vacancy clusters is manifested by a photo-excitation induced change of charge from neutral to negative. The clusters gradually disappear during the HPHT treatments, and the samples treated at 2500 °C resemble colourless samples optically and show similar positron lifetimes. The results show that the brown colour originates from the vacancy clusters and that their removal by the HPHT treatment causes the loss of coloration.
Collapse
Affiliation(s)
- J-M Mäki
- Department of Applied Physics, Helsinki University of Technology, 02150 TKK, Finland
| | | | | | | | | |
Collapse
|
11
|
Xiaodong K, Weidong M, Shaojie W, Luhong M, Pilian H, Hezhou W, Tongnian S, Niefeng S. Investigation of Vacancy Defect in InP Crystal by Positron Lifetime. J RARE EARTH 2007. [DOI: 10.1016/s1002-0721(07)60506-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
|
12
|
Britton DT, Hempel A, Triftshäuser W. Hopping transport of positrons in hydrogenated amorphous silicon. PHYSICAL REVIEW LETTERS 2001; 87:217401. [PMID: 11736377 DOI: 10.1103/physrevlett.87.217401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2001] [Indexed: 05/23/2023]
Abstract
Positron beam timing spectroscopy has been used to investigate positron diffusion in hydrogenated amorphous silicon between 85 and 350 K. The diffusivity is determined from both the contribution of the surface, where the positrons have a different characteristic annihilation rate, and its effect on the shape of the bulk annihilation rate distribution. We observe a single positron state with a temperature independent lifetime of 322 ps. From the temperature dependence of the positron diffusion we show that this is a localized state and present the first ever direct observation of hopping diffusion of positrons in solids. The migration enthalpy for positrons in this state is found to be 17.7(3) meV.
Collapse
Affiliation(s)
- D T Britton
- Department of Physics, University of Cape Town, Rondebosch 7701, South Africa
| | | | | |
Collapse
|
13
|
Monge MA, Pareja R, González R, Chen Y. Positronium deuteride and hydride in MgO crystals. J Radioanal Nucl Chem 1996. [DOI: 10.1007/bf02036251] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
|
14
|
Laine T, Saarinen K, Mäkinen J, Hautojärvi P, Corbel C, Pfeiffer LN, Citrin PH. Observation of compensating Ga vacancies in highly Si-doped GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:R11050-R11053. [PMID: 9984983 DOI: 10.1103/physrevb.54.r11050] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
15
|
Monge MA, Pareja R, González R, Chen Y. Positron bound states on hydride ions in thermochemically reduced MgO single crystals. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:8950-8953. [PMID: 9984604 DOI: 10.1103/physrevb.54.8950] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
16
|
Avalos V, Dannefaer S. Positron-annihilation investigation of vacancy agglomeration in electron-irradiated float-zone silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:1724-1728. [PMID: 9986017 DOI: 10.1103/physrevb.54.1724] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
17
|
Laine T, Mäkinen J, Saarinen K, Hautojärvi P, Corbel C, Fille ML, Gibart P. Vacancylike structure of the DX center in Te-doped AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:11025-11033. [PMID: 9982675 DOI: 10.1103/physrevb.53.11025] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
18
|
Kuisma S, Saarinen K, Hautojärvi P, Corbel C, LeBerre C. Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:9814-9830. [PMID: 9982542 DOI: 10.1103/physrevb.53.9814] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
19
|
Ebert P, Chen X, Heinrich M, Simon M, Urban K, Lagally MG. Direct determination of the interaction between vacancies on InP(110) surfaces. PHYSICAL REVIEW LETTERS 1996; 76:2089-2092. [PMID: 10060603 DOI: 10.1103/physrevlett.76.2089] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
20
|
Kuisma S, Saarinen K, Hautojärvi P, Corbel C. Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:R7588-R7591. [PMID: 9982273 DOI: 10.1103/physrevb.53.r7588] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
21
|
Mäkinen J, Laine T, Partanen J, Saarinen K, Hautojärvi P, Tappura K, Hakkarainen T, Asonen H, Pessa M, Kauppinen JP, Vänttinen K, Paalanen MA, Likonen J. Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7851-7862. [PMID: 9982235 DOI: 10.1103/physrevb.53.7851] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
22
|
Puska MJ, Seitsonen AP, Nieminen RM. Electron-positron Car-Parrinello methods: Self-consistent treatment of charge densities and ionic relaxations. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:10947-10961. [PMID: 9980193 DOI: 10.1103/physrevb.52.10947] [Citation(s) in RCA: 50] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
23
|
Saarinen K, Seitsonen AP, Hautojärvi P, Corbel C. Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:10932-10946. [PMID: 9980192 DOI: 10.1103/physrevb.52.10932] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
24
|
Corbel C, Saarinen K, Kuisma S, Hautojärvi P, Fornari R. Evidence of two kinds of acceptors in undoped semi-insulating GaAs: Positron trapping at gallium vacancies and negative ions. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:8112-8120. [PMID: 9979809 DOI: 10.1103/physrevb.52.8112] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
25
|
Mäkinen J, Laine T, Saarinen K, Hautojärvi P, Corbel C, Airaksinen VM, Nagle J. Microscopic structure of the DX center in Si-doped AlxGa1-xAs: Observation of a vacancy by positron-annihilation spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:4870-4883. [PMID: 9981671 DOI: 10.1103/physrevb.52.4870] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
26
|
Baroux L, Corbel C, Kiessling FM, Rolland S, Granger R, Hoerstel W, Triboulet R. Atomic structure of acceptors in Cd0.22Hg0.78Te: Discrimination between vacancies and ions based on positron lifetime and Hall data. PHYSICAL REVIEW LETTERS 1995; 75:557-560. [PMID: 10060051 DOI: 10.1103/physrevlett.75.557] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
27
|
Saarinen K, Kuisma S, Mäkinen J, Hautojärvi P, Törnqvist M, Corbel C. Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:14152-14163. [PMID: 9978343 DOI: 10.1103/physrevb.51.14152] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
28
|
|
29
|
Peng JP, Lynn KG, Umlor MT, Keeble DJ, Harshman DR. Vacancy defects in photoexcited GaAs studied by positron two-dimensional angular correlation of annihilation radiation. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:11247-11250. [PMID: 9975249 DOI: 10.1103/physrevb.50.11247] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
30
|
Ambigapathy R, Manuel AA, Hautojärvi P, Saarinen K, Corbel C. Positron-annihilation studies of neutral and negatively charged As vacancies in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:2188-2199. [PMID: 9976433 DOI: 10.1103/physrevb.50.2188] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
31
|
Puska MJ, Sob M, Brauer G, Korhonen T. First-principles calculation of positron lifetimes and affinities in perfect and imperfect transition-metal carbides and nitrides. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:10947-10957. [PMID: 10009937 DOI: 10.1103/physrevb.49.10947] [Citation(s) in RCA: 53] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
|
32
|
Saarinen K, Kuisma S, Hautojärvi P, Corbel C, LeBerre C. Metastable vacancy in the EL2 defect in GaAs studied by positron-annihilation spectroscopies. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:8005-8016. [PMID: 10009563 DOI: 10.1103/physrevb.49.8005] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
33
|
Brusa RS, Zecca A, Nobili C, Ottaviani G, Tonini R, Dupasquier A. Vacancy-hydrogen interaction in H-implanted Si studied by positron annihilation. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:7271-7280. [PMID: 10009465 DOI: 10.1103/physrevb.49.7271] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
34
|
Smith CD, Rice-Evans P, Shaw N. Observation of vacancy charge states in Cd0.2Hg0.8Te by positron annihilation. PHYSICAL REVIEW LETTERS 1994; 72:1108-1111. [PMID: 10056619 DOI: 10.1103/physrevlett.72.1108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
35
|
Krause-Rehberg R, Leipner HS, Kupsch A, Polity A, Drost T. Positron study of defects in as-grown and plastically deformed GaAs:Te. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2385-2395. [PMID: 10011072 DOI: 10.1103/physrevb.49.2385] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
36
|
Dannefaer S, Kerr D. Positron binding energies and specific trapping rates for monovacancies in GaAs and InSb. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:9142-9145. [PMID: 10007141 DOI: 10.1103/physrevb.48.9142] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
37
|
Krause-Rehberg R, Brohl M, Leipner HS, Drost T, Polity A, Beyer U, Alexander H. Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:13266-13276. [PMID: 10005631 DOI: 10.1103/physrevb.47.13266] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
38
|
Saarinen K, Kuisma S, Hautojärvi P, Corbel C, LeBerre C. Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation. PHYSICAL REVIEW LETTERS 1993; 70:2794-2797. [PMID: 10053654 DOI: 10.1103/physrevlett.70.2794] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
39
|
Pareja R, Marí B, Segura A, Muñoz V. Thermal recovery of the lattice damage in neutron-transmutation-doped InSe. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:2870-2873. [PMID: 10006349 DOI: 10.1103/physrevb.47.2870] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
|
40
|
Soininen E, Mäkinen J, Hautojärvi P, Corbel C, Freundlich A, Grenet JC. Defects in GaAs on Si studied with the positron-beam technique. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:12394-12401. [PMID: 10003155 DOI: 10.1103/physrevb.46.12394] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
41
|
Corbel C, Pierre F, Saarinen K, Hautojärvi P, Moser P. Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:3386-3399. [PMID: 10001913 DOI: 10.1103/physrevb.45.3386] [Citation(s) in RCA: 60] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
42
|
Saarinen K, Hautojärvi P, Lanki P, Corbel C. Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:10585-10600. [PMID: 9999084 DOI: 10.1103/physrevb.44.10585] [Citation(s) in RCA: 55] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
43
|
Mäkinen S, Rajainmäki H, Linderoth S. Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:5510-5517. [PMID: 9998386 DOI: 10.1103/physrevb.44.5510] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
44
|
Saarinen K, Hautojärvi P, Keinonen J, Rauhala E, Räisänen J, Corbel C. Defect structure and recovery in hydrogen-implanted semi-insulating GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:4249-4262. [PMID: 9997776 DOI: 10.1103/physrevb.43.4249] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
45
|
Krause R, Saarinen K, Hautojärvi P, Polity A, Gärtner G, Corbel C. Observation of a monovacancy in the metastable state of the EL2 defect in GaAs by positron annihilation. PHYSICAL REVIEW LETTERS 1990; 65:3329-3332. [PMID: 10042841 DOI: 10.1103/physrevlett.65.3329] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
46
|
Mäkinen S, Rajainmäki H, Linderoth S. Low-temperature positron-lifetime studies of proton-irradiated silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:11166-11173. [PMID: 9995398 DOI: 10.1103/physrevb.42.11166] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
47
|
Huttunen PA, Mäkinen J, Britton DT, Soininen E, Vehanen A. Temperature dependence of thermal positron branching at metal surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:1560-1573. [PMID: 9995585 DOI: 10.1103/physrevb.42.1560] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
48
|
Mäkinen J, Corbel C, Hautojärvi P, Vehanen A, Mathiot D. Positron mobility in Si at 300 K. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:1750-1758. [PMID: 9995607 DOI: 10.1103/physrevb.42.1750] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|