Raman microprobe scattering of solid silicon and germanium at the melting temperature

Anisotropic phonon dynamics in Dirac semimetal PtTe2 thin films enabled by helicity-dependent ultrafast light excitation

Coherent phonons have aroused considerable attention in condensed matter physics owing to their extraordinary capacity of reflecting and controlling the physical properties of matter. However, the investigation on the interaction between coherent phonons and other microscopic particles on the ultrafast timescale within topological systems continues to be an active and unresolved area. Here, we show the energy transfer of coherent optical phonons (COP) in Dirac semimetal PtTe2 thin films using ultrafast optical pump-probe spectroscopy. Specifically, the helicity-dependent light-driven anisotropic COP signals disclose their direct connection with the light-excited anisotropic spin-polarized electrons via an angular momentum transfer. Furthermore, we observe the notable decreases in the COP oscillation frequency and the decay rate with increasing temperatures due to the anharmonic phonon-phonon scattering and electron-phonon scattering in the COP dissipation process, respectively. Our work paves the way for uncovering the coherent phonons in Dirac semimetals for the potential applications in optoelectronics and opto-spintronics.

Resonance-enhanced excitation and relaxation dynamics of coherent phonons in Fe1.14Te

Lattice dynamics plays a significant role in manipulating the unique physical properties of materials. In this work, femtosecond transient optical spectroscopy is used to investigate the generation mechanism and relaxation dynamics of coherent phonons in Fe1.14Te-a parent compound of chalcogenide superconductors. The reflectivity time series consist of the exponential decay component due to hot carriers and damped oscillations caused by the A1g phonon vibration. The vibrational frequency and dephasing time of the A1g phonons are obtained as a function of temperature. With increasing temperature, the phonon frequency decreases and can be well described with the anharmonicity model. Dephasing time is independent of temperature, indicating that the phonon dephasing is dominated by phonon-defect scattering. The impulsive stimulated Raman scattering mechanism is responsible for the coherent phonon generation. Owing to the resonance Raman effect, the maximum photosusceptibility of the A1g phonons occurs at 1.590 eV, corresponding to an electronic transition in Fe1.14Te.

Probing anharmonic phonons in WS2 van der Waals crystal by Raman spectroscopy and machine learning

Understanding the optothermal physics of quantum materials will enable the efficient design of next-generation photonic and superconducting circuits. Anharmonic phonon dynamics is central to strongly interacting optothermal physics. This is because the pressure of a gas of anharmonic phonons is temperature dependent. Phonon-phonon and electron-phonon quantum interactions contribute to the anharmonic phonon effect. Here we have studied the optothermal properties of physically exfoliated WS₂ van der Waals crystal via temperature-dependent Raman spectroscopy and machine learning strategies. This fundamental investigation will lead to unveiling the dependence of temperature on in-plane and out-of-plane Raman shifts (Raman thermometry) of WS₂ to study the thermal conductivity, hot carrier diffusion coefficient, and thermal expansion coefficient.

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

Epitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated by H₂ intercalation under different time periods, and the temperature-dependent Raman spectra were recorded to evaluate the intrinsic structural difference generated by H₂ time duration. The G peak thermal lineshift rates dω/dT showed that the H₂ intercalation significantly weakened the pinning effect in epitaxial graphene. Furthermore, the G peak dω/dT value showed a perspicuous pinning effect disparity of QFSBEG samples. Additionally, the anharmonic phonon effect was investigated from the Raman lineshift of peaks. The physical mechanism responsible for dominating the G-mode temperature-dependent behavior among samples with different substrate coupling effects was elucidated. The phonon decay process of different samples was compared as the temperature increased. The evolution from in situ grown graphene to QFSBEG was determined. This study will expand the understanding of QFSBEG and pave a new way for its fabrication.

Timely and atomic-resolved high-temperature mechanical investigation of ductile fracture and atomistic mechanisms of tungsten

Revealing the atomistic mechanisms for the high-temperature mechanical behavior of materials is important for optimizing their properties for service at high-temperatures and their thermomechanical processing. However, due to materials microstructure’s dynamic recovery and the absence of available in situ techniques, the high-temperature deformation behavior and atomistic mechanisms of materials are difficult to evaluate. Here, we report the development of a microelectromechanical systems-based thermomechanical testing apparatus that enables mechanical testing at temperatures reaching 1556 K inside a transmission electron microscope for in situ investigation with atomic-resolution. With this unique technique, we first uncovered that tungsten fractures at 973 K in a ductile manner via a strain-induced multi-step body-centered cubic (BCC)-to-face-centered cubic (FCC) transformation and dislocation activities within the strain-induced FCC phase. Both events reduce the stress concentration at the crack tip and retard crack propagation. Our research provides an approach for timely and atomic-resolved high-temperature mechanical investigation of materials at high-temperatures.

High-temperature deformation of materials is challenging to evaluate. Here the authors develop a novel device that allows atomic resolved in situ high temperature mechanical tests inside a transmission electron microscope and reveal ductile fracture of a single crystal tungsten deformed at 973 K.

Phonon Anharmonicity in Few-Layer Black Phosphorus

We report a temperature-dependent Raman spectroscopy study of few-layer black phosphorus (BP) with varied incident polarization and sample thickness. The Raman-active modes A_g¹, B_2g, and A_g² exhibit a frequency downshift, while their line width tends to increase with increasing temperature. To understand the details of these phenomena, we perform first-principles density functional theory calculations on freestanding monolayer BP. The effect of thermal expansion is included by constraining the temperature-dependent lattice constant. The study of the temperature-induced shift of the phonon frequencies is carried out using ab initio molecular dynamics simulations. The normal-mode frequencies are calculated by identifying the peak positions from the magnitude of the Fourier transform of the total velocity autocorrelation. Anharmonicity induces a frequency shift for each individual mode, and the three- and four-phonon process coefficients are extracted. These results are compared with those obtained from many-body perturbation theory, giving access to phonon lifetimes and lattice thermal conductivity. We establish that the frequency downshift is primarily due to phonon-phonon scattering while thermal expansion only contributes indirectly by renormalizing the phonon-phonon scattering. Overall, the theoretical results are in excellent agreement with experiment, thus showing that controlling phonon scattering in BP could result in better thermoelectric devices or transistors that dissipate heat more effectively when confined to the nanoscale.

Optimized seeded Bridgman growth and temperature dependent THz optical properties of LiInS2 crystals

High quality and large size nonlinear optical LiInS₂ (LIS) crystals were successfully grown by the optimized seeded Bridgman method.

Directional heat dissipation across the interface in anatase-rutile nanocomposites

Understanding the structures and properties of interfaces in (nano-)composites helps to reveal their important influence on reactivity and overall performance. TiO2 is a technologically important material, and anatase/rutile TiO2 composites have been shown to display enhanced photocatalytic performance over pure anatase or rutile TiO2. This has been attributed to a synergistic effect between the two phases, but the origin of this effect as well as the structure of the interface has not been established. Using Raman spectroscopy, here we provide evidence of distinct differences in the thermal properties of the anatase and rutile moieties in the composite, with anatase becoming effectively much warmer than the rutile phase under laser irradiation. With the help of first-principles calculations, we analyze the atomic structure and unique electronic properties of the composite and infer possible reasons for the directional heat dissipation across the interface.

Quantitative analysis of the temperature dependency in Raman active vibrational modes of molybdenum disulfide atomic layers

Raman spectroscopy is utilized to quantify the temperature dependency of the vibrational modes in molybdenum disulfide (MoS2) atomic layers. These analyses are essential for understanding the structural properties and phononic behaviors of this two-dimensional (2D) material. We quantitatively analyze the temperature dependent shifts of the Raman peak positions in the temperature range from 300 to 550 K, and find that both planar and out-of-plane characteristic modes are highly sensitive to temperature variations. This temperature dependency is linear and can be fully explained by the first-order temperature coefficient. Using a semi-quantitative model, we evaluate the contributions of the material's thermal expansion and intrinsic temperature effects to this dependency. We reveal that the dominating source of shift in the peak position of planar mode E2g(1) for samples of all thicknesses investigated is the four-phonon process. In addition to the four-phonon process, thermal expansion plays a significant role in the temperature dependency of the out-of-plane mode, A1g. The thickness dependency of the temperature coefficient for MoS2 and a drastic change in behaviors of samples from bi- to single-layered are also demonstrated. We further explore the role of defects in the thermal properties of MoS2 by examining the temperature dependency of Raman modes in CVD-grown samples.

Measurement of two low-temperature energy gaps in the electronic structure of antiferromagnetic USb2 using ultrafast optical spectroscopy

Ultrafast optical spectroscopy is used to study the antiferromagnetic f-electron system USb(2). We observe the opening of two charge gaps at low temperatures (</~45 K), arising from renormalization of the electronic structure. Analysis of our data indicates that one gap is due to hybridization between localized f-electron and conduction electron bands, while band renormalization involving magnons leads to the emergence of the second gap. These experiments thus enable us to shed light on the complex electronic structure emerging at the Fermi surface in f-electron systems.

Sub-wavelength temperature probing in near-field laser heating by particles

This work reports on the first time experimental investigation of temperature field inside silicon substrates under particle-induced near-field focusing at a sub-wavelength resolution. The noncontact Raman thermometry technique employing both Raman shift and full width at half maximum (FWHM) methods is employed to investigate the temperature rise in silicon beneath silica particles. Silica particles of three diameters (400, 800 and 1210 nm), each under four laser energy fluxes of 2.5 × 10(8), 3.8 ×10(8), 6.9 ×10(8) and 8.6 ×10(8) W/m(2), are used to investigate the effects of particle size and laser energy flux. The experimental results indicate that as the particle size or the laser energy flux increases, the temperature rise inside the substrate goes higher. Maximum temperature rises of 55.8 K (based on Raman FWHM method) and 29.3K (based on Raman shift method) are observed inside the silicon under particles of 1210 nm diameter with an incident laser of 8.6 × 10(8) W/m(2). The difference is largely due to the stress inside the silicon caused by the laser heating. To explore the mechanism of heating at the sub-wavelength scale, high-fidelity simulations are conducted on the enhanced electric and temperature fields. Modeling results agree with experiment qualitatively, and discussions are provided about the reasons for their discrepancy.

Raman concentrators in Ge nanowires with dielectric coatings

Raman spectroscopy is a powerful tool for investigating many fundamental properties of nanostructures, but extrinsic effects including background scattering and laser-induced heating can limit the analysis of intrinsic properties. A thin SiO2 dielectric coating is found to enhance the Raman signal from a single Ge nanowire by a factor of two as a result of wave interference. Consequently, the coated nanowire experiences less heating than a bare nanowire at equivalent signal intensities. The results demonstrate a simple and effective method to extend the limits of Raman analysis on single nanostructures and facilitate their characterization.

Probing Phonons in Nonpolar Semiconducting Nanowires with Raman Spectroscopy

We present recent developments in Raman probe of confined optical and acoustic phonons in nonpolar semiconducting nanowires, with emphasis on Si and Ge. First, a review of the theoretical spatial correlation phenomenological model widely used to explain the downshift and asymmetric broadening to lower energies observed in the Raman profile is given. Second, we discuss the influence of local inhomogeneous laser heating and its interplay with phonon confinement on Si and Ge Raman line shape. Finally, acoustic phonon confinement, its effect on thermal conductivity, and factors that lead to phonon damping are discussed in light of their broad implications on nanodevice fabrication.