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Fu J, Ramesh S, Melvin Lim JW, Sum TC. Carriers, Quasi-particles, and Collective Excitations in Halide Perovskites. Chem Rev 2023. [PMID: 37276018 DOI: 10.1021/acs.chemrev.2c00843] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Halide perovskites (HPs) are potential game-changing materials for a broad spectrum of optoelectronic applications ranging from photovoltaics, light-emitting devices, lasers to radiation detectors, ferroelectrics, thermoelectrics, etc. Underpinning this spectacular expansion is their fascinating photophysics involving a complex interplay of carrier, lattice, and quasi-particle interactions spanning several temporal orders that give rise to their remarkable optical and electronic properties. Herein, we critically examine and distill their dynamical behavior, collective interactions, and underlying mechanisms in conjunction with the experimental approaches. This review aims to provide a unified photophysical picture fundamental to understanding the outstanding light-harvesting and light-emitting properties of HPs. The hotbed of carrier and quasi-particle interactions uncovered in HPs underscores the critical role of ultrafast spectroscopy and fundamental photophysics studies in advancing perovskite optoelectronics.
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Affiliation(s)
- Jianhui Fu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Sankaran Ramesh
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Energy Research Institute @NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
| | - Jia Wei Melvin Lim
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Energy Research Institute @NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
| | - Tze Chien Sum
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
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2
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Zou Y, Esmaielpour H, Suchet D, Guillemoles JF, Goodnick SM. The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells. Sci Rep 2023; 13:5601. [PMID: 37019968 PMCID: PMC10076436 DOI: 10.1038/s41598-023-32125-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2022] [Accepted: 03/22/2023] [Indexed: 04/07/2023] Open
Abstract
Under continuous-wave laser excitation in a lattice-matched In0.53Ga0.47As/In0.8Ga0.2As0.44P0.56 multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm compared with 980 nm excitation, as the injected carrier density increases. Ensemble Monte Carlo simulation of the carrier dynamics in the MQW system shows that this carrier temperature rise is dominated by nonequilibrium LO phonon effects, with the Pauli exclusion having a significant effect at high carrier densities. Further, we find a significant fraction of carriers reside in the satellite L-valleys for 405 nm excitation due to strong intervalley transfer, leading to a cooler steady-state electron temperature in the central valley compared with the case when intervalley transfer is excluded from the model. Good agreement between experiment and simulation has been shown, and detailed analysis has been presented. This study expands our knowledge of the dynamics of the hot carrier population in semiconductors, which can be applied to further limit energy loss in solar cells.
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Affiliation(s)
- Yongjie Zou
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85281, USA.
| | - Hamidreza Esmaielpour
- CNRS, Ecole Polytechnique, Institut Photovoltaïque d'Ile-de-France UMR 9006, 18 Boulevard Thomas Gobert, 91120, Palaiseau, France
| | - Daniel Suchet
- CNRS, Ecole Polytechnique, Institut Photovoltaïque d'Ile-de-France UMR 9006, 18 Boulevard Thomas Gobert, 91120, Palaiseau, France
| | - Jean-François Guillemoles
- CNRS, Ecole Polytechnique, Institut Photovoltaïque d'Ile-de-France UMR 9006, 18 Boulevard Thomas Gobert, 91120, Palaiseau, France
| | - Stephen M Goodnick
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85281, USA
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3
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Shulenberger KE, Jilek MR, Sherman SJ, Hohman BT, Dukovic G. Electronic Structure and Excited State Dynamics of Cadmium Chalcogenide Nanorods. Chem Rev 2023; 123:3852-3903. [PMID: 36881852 DOI: 10.1021/acs.chemrev.2c00676] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/09/2023]
Abstract
The cylindrical quasi-one-dimensional shape of colloidal semiconductor nanorods (NRs) gives them unique electronic structure and optical properties. In addition to the band gap tunability common to nanocrystals, NRs have polarized light absorption and emission and high molar absorptivities. NR-shaped heterostructures feature control of electron and hole locations as well as light emission energy and efficiency. We comprehensively review the electronic structure and optical properties of Cd-chalcogenide NRs and NR heterostructures (e.g., CdSe/CdS dot-in-rods, CdSe/ZnS rod-in-rods), which have been widely investigated over the last two decades due in part to promising optoelectronic applications. We start by describing methods for synthesizing these colloidal NRs. We then detail the electronic structure of single-component and heterostructure NRs and follow with a discussion of light absorption and emission in these materials. Next, we describe the excited state dynamics of these NRs, including carrier cooling, carrier and exciton migration, radiative and nonradiative recombination, multiexciton generation and dynamics, and processes that involve trapped carriers. Finally, we describe charge transfer from photoexcited NRs and connect the dynamics of these processes with light-driven chemistry. We end with an outlook that highlights some of the outstanding questions about the excited state properties of Cd-chalcogenide NRs.
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Affiliation(s)
| | - Madison R Jilek
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
| | - Skylar J Sherman
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
| | - Benjamin T Hohman
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
| | - Gordana Dukovic
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States.,Renewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, Colorado 80309, United States.,Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
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4
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Smołka T, Posmyk K, Wasiluk M, Wyborski P, Gawełczyk M, Mrowiński P, Mikulicz M, Zielińska A, Reithmaier JP, Musiał A, Benyoucef M. Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy. MATERIALS (BASEL, SWITZERLAND) 2021; 14:6270. [PMID: 34771794 PMCID: PMC8585182 DOI: 10.3390/ma14216270] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 10/09/2021] [Accepted: 10/18/2021] [Indexed: 11/23/2022]
Abstract
We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD's levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.
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Affiliation(s)
- Tristan Smołka
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Katarzyna Posmyk
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Maja Wasiluk
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Paweł Wyborski
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Michał Gawełczyk
- Department of Theoretical Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland;
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, ul. Grudziądzka 5, 87-100 Toruń, Poland
| | - Paweł Mrowiński
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Monika Mikulicz
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Agata Zielińska
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Johann Peter Reithmaier
- Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), Institute of Nanostructure Technologies and Analytics (INA), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany;
| | - Anna Musiał
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; (T.S.); (K.P.); (M.W.); (P.W.); (P.M.); (M.M.); (A.Z.)
| | - Mohamed Benyoucef
- Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), Institute of Nanostructure Technologies and Analytics (INA), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany;
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5
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Podemski P, Gawełczyk M, Wyborski P, Salamon H, Burakowski M, Musiał A, Reithmaier JP, Benyoucef M, Sęk G. Spin memory effect in charged single telecom quantum dots. OPTICS EXPRESS 2021; 29:34024-34034. [PMID: 34809201 DOI: 10.1364/oe.438708] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Accepted: 09/24/2021] [Indexed: 06/13/2023]
Abstract
Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a very dense ladder of excited states providing relatively easy quasi-resonant optical excitation, and together with telecom wavelengths emission they bring quantum gates and memories closer to compatibility with fiber-optic communication.
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6
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Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11020497] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2023]
Abstract
In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.
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7
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Jiang C, Ning J, Li X, Wang X, Zhang Z. Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications. NANOSCALE RESEARCH LETTERS 2019; 14:362. [PMID: 31792621 PMCID: PMC6889259 DOI: 10.1186/s11671-019-3188-3] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Accepted: 10/17/2019] [Indexed: 06/10/2023]
Abstract
Low-dimensional III-V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900-1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation fluence. However, it is very challenging to obtain a high-performance QD-SESAM working at the longer wavelength range around 1550 nm due to the huge obstacle to epitaxy growth of the QD structures. In this work, for the first time, it is revealed that, the InAs/GaAs QD system designed for the 1550-nm light emission range, the very weak carrier relaxation process from the capping layers (CLs) to QDs is mainly responsible for the poor emission performance, according to which we have developed a short-period superlattice (In0.20Ga0.80As/In0.30Ga0.70As)5 as the CL for the QDs and has realized ~ 10 times stronger emission at 1550 nm compared with the conventional InGaAs CL. Based on the developed QD structure, high-performance QD-SESAMs have been successfully achieved, exhibiting a very small saturation intensity of 13.7 MW/cm2 and a large nonlinear modulation depth of 1.6 %, simultaneously, which enables the construction of a 1550-nm femtosecond mode-locked fiber lasers with excellent long-term working stability.
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Affiliation(s)
- Cheng Jiang
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China
| | - Jiqiang Ning
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Xiaohui Li
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an, China
| | - Xu Wang
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Ziyang Zhang
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
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8
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Guo Y, Yang F, Zheng X, Tang J, Zhong H, Yu A, Wang J, Zou B. Direct Observation of Surface Polarons in Capped CuInS 2 Quantum Dots by Ultrafast Pump-Probe Spectroscopies. J Phys Chem Lett 2019; 10:5297-5301. [PMID: 31415172 DOI: 10.1021/acs.jpclett.9b02023] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Semiconductor nanocrystals are mostly prepared by colloid chemistry with organic surfactant molecules, and their surface polarization effect on the carrier relaxations are critical to their optoelectronic applications. Until now, the surface polarization effect and detailed photophysical processes of these capped quantum dots (QDs) are still unclear. Here, we studied the dynamics of the photoinduced carriers and capping molecule vibrations of capped CuInS2 quantum dots by using the femtosecond pump-probe system in both visible and IR zones. It is identified that the capping molecular vibrations exhibit significant Fermion bleaching nature, whose relaxation profile is in good agreement with the radiative recombination dynamics of QDs in the visible region. These results demonstrate that the extrinsic surface polarons form by the coupling of photoinduced carriers and surface ligand vibrations, and take part in the photophysical processes of these QDs. This finding is helpful for the QD design and applications in photoelectronic devices.
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Affiliation(s)
- Yongchang Guo
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems , Beijing Institute of Technology , Beijing 100081 , P. R. China
- Beijing National Laboratory for Molecular Sciences; Molecular Reaction Dynamics Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences , Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Fan Yang
- Beijing National Laboratory for Molecular Sciences; Molecular Reaction Dynamics Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences , Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Xuan Zheng
- Beijing National Laboratory for Molecular Sciences; Molecular Reaction Dynamics Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences , Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Jialun Tang
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Haizheng Zhong
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Anchi Yu
- Department of Chemistry , Renmin University of China , Beijing 100872 , P. R. China
| | - Jianping Wang
- Beijing National Laboratory for Molecular Sciences; Molecular Reaction Dynamics Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences , Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Bingsuo Zou
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems , Beijing Institute of Technology , Beijing 100081 , P. R. China
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9
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Stoll T, Branchi F, Réhault J, Scotognella F, Tassone F, Kriegel I, Cerullo G. Two-Dimensional Electronic Spectroscopy Unravels sub-100 fs Electron and Hole Relaxation Dynamics in Cd-Chalcogenide Nanostructures. J Phys Chem Lett 2017; 8:2285-2290. [PMID: 28467717 PMCID: PMC6053257 DOI: 10.1021/acs.jpclett.7b00682] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2017] [Accepted: 05/03/2017] [Indexed: 05/21/2023]
Abstract
We use two-dimensional electronic spectroscopy (2DES) to disentangle the separate electron and hole relaxation pathways and dynamics of CdTe nanorods on a sub-100 fs time scale. By simultaneously exciting and probing the first three excitonic transitions (S1, S2, and S3) and exploiting the unique combination of high temporal and spectral resolution of 2DES, we derive a complete picture for the state-selective carrier relaxation. We find that hot holes relax from the 1Σ3/2 to the 1Σ1/2 state (S2 → S1) with 30 ± 10 fs time constant, and the hot electrons relax from the Σ' to the Σ state (S3 → S1) with 50 ± 10 fs time constant. This observation would not have been possible with conventional transient absorption spectroscopy due to the spectral congestion of the transitions and the very fast relaxation time scales.
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Affiliation(s)
- Tatjana Stoll
- IFN-CNR, Dipartimento di Fisica,
Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy
| | - Federico Branchi
- IFN-CNR, Dipartimento di Fisica,
Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy
| | - Julien Réhault
- IFN-CNR, Dipartimento di Fisica,
Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy
| | - Francesco Scotognella
- IFN-CNR, Dipartimento di Fisica,
Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy
- Center
for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli, 70/3, 20133 Milano, Italy
| | - Francesco Tassone
- Center
for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli, 70/3, 20133 Milano, Italy
| | - Ilka Kriegel
- Department
of Nanochemistry, Instituto Italiano di
Tecnologia (IIT), via Morego, 30, 16163 Genova, Italy
- Molecular
Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- I.K.: E-mail:
| | - Giulio Cerullo
- IFN-CNR, Dipartimento di Fisica,
Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy
- G.C.: E-mail:
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10
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Pietryga JM, Park YS, Lim J, Fidler AF, Bae WK, Brovelli S, Klimov VI. Spectroscopic and Device Aspects of Nanocrystal Quantum Dots. Chem Rev 2017; 116:10513-622. [PMID: 27677521 DOI: 10.1021/acs.chemrev.6b00169] [Citation(s) in RCA: 400] [Impact Index Per Article: 57.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.
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Affiliation(s)
- Jeffrey M Pietryga
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
| | - Young-Shin Park
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.,Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87131, United States
| | - Jaehoon Lim
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
| | - Andrew F Fidler
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
| | - Wan Ki Bae
- Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology , Seoul 02792, Korea
| | - Sergio Brovelli
- Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , I-20125 Milano, Italy
| | - Victor I Klimov
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
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11
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Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals. Nat Commun 2017; 8:14350. [PMID: 28176882 PMCID: PMC5309769 DOI: 10.1038/ncomms14350] [Citation(s) in RCA: 148] [Impact Index Per Article: 21.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2016] [Accepted: 12/20/2016] [Indexed: 12/23/2022] Open
Abstract
Hot-carrier solar cells can overcome the Shockley-Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite nanocrystals transcend these limitations and exhibit around two orders slower hot-carrier cooling times and around four times larger hot-carrier temperatures than their bulk-film counterparts. Under low pump excitation, hot-carrier cooling mediated by a phonon bottleneck is surprisingly slower in smaller nanocrystals (contrasting with conventional nanocrystals). At high pump fluence, Auger heating dominates hot-carrier cooling, which is slower in larger nanocrystals (hitherto unobserved in conventional nanocrystals). Importantly, we demonstrate efficient room temperature hot-electrons extraction (up to ∼83%) by an energy-selective electron acceptor layer within 1 ps from surface-treated perovskite NCs thin films. These insights enable fresh approaches for extremely thin absorber and concentrator-type hot-carrier solar cells. Harvesting excess energy from above-band gap photons could lead to solar cells which exceed conventional efficiency limits. Li et al., study hot carrier cooling in hybrid perovskite materials with reduced dimensionality using transient absorption spectroscopy and demonstrate efficient hot-electron extraction in such systems.
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12
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Tiemeyer S, Bombeck M, Göhring H, Paulus M, Sternemann C, Nase J, Wirkert FJ, Möller J, Büning T, Seeck OH, Reuter D, Wieck AD, Bayer M, Tolan M. Polaron-induced lattice distortion of (In,Ga)As/GaAs quantum dots by optically excited carriers. NANOTECHNOLOGY 2016; 27:425702. [PMID: 27622774 DOI: 10.1088/0957-4484/27/42/425702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report on a high resolution x-ray diffraction study unveiling the effect of carriers optically injected into (In,Ga)As quantum dots on the surrounding GaAs crystal matrix. We find a tetragonal lattice expansion with enhanced elongation along the [001] crystal axis that is superimposed on an isotropic lattice extension. The isotropic contribution arises from excitation induced lattice heating as confirmed by temperature dependent reference studies. The tetragonal expansion on the femtometer scale is tentatively attributed to polaron formation by carriers trapped in the quantum dots.
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Affiliation(s)
- S Tiemeyer
- Fakultät Physik / DELTA, Technische Universität Dortmund, D-44221 Dortmund, Germany
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13
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Varghese A, Yakimov M, Tokranov V, Mitin V, Sablon K, Sergeev A, Oktyabrsky S. Complete voltage recovery in quantum dot solar cells due to suppression of electron capture. NANOSCALE 2016; 8:7248-7256. [PMID: 26974517 DOI: 10.1039/c5nr07774e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Extensive investigations in recent years have shown that addition of quantum dots (QDs) to a single-junction solar cell decreases the open circuit voltage, VOC, with respect to the reference cell without QDs. Despite numerous efforts, the complete voltage recovery in QD cells has been demonstrated only at low temperatures. To minimize the VOC reduction, we propose and investigate a new approach that combines nanoscale engineering of the band structure and the potential profile. Our studies of GaAs solar cells with various InAs QD media demonstrate that the main cause of the VOC reduction is the fast capture of photoelectrons from the GaAs conduction band (CB) to the localized states in QDs. As the photoelectron capture into QDs is mainly realized via the wetting layers (WLs), we substantially reduced the WLs using two monolayer AlAs capping of QDs. In the structures with reduced WLs, the direct CB-to-QD capture is further suppressed due to charging of QDs via doping of the interdot space. The QD devices with suppressed photoelectron capture show the same VOC as the GaAs reference cell together with some improvements in the short circuit current.
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Affiliation(s)
- A Varghese
- SUNY Polytechnic Institute, Albany, NY 12203, USA
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14
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El Halawany A, Leuenberger MN. Electrically driven single photon source at high temperature. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:085303. [PMID: 26828830 DOI: 10.1088/0953-8984/28/8/085303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We present a theoretical model for an electrically driven single photon source operating at high temperatures. We show that decoherence, which is usually the main obstacle for operating single photon sources at high temperatures, ensures an efficient operation of the presented electrically driven single photon source at high temperatures. The single-photon source is driven by a single electron source attached to a heterostructure semiconductor nanoring. The electron's dynamics in the nanoring and the subsequent recombination with the hole is described by the generalized master equation with a Hamiltonian based on tight-binding model, taking into account the electron-LO phonon interaction. As a result of decoherence, an almost 100% single photon emission with a strong antibunching behavior i.e. g(2)(0) << 1 at high temperature up to 300 K is achieved.
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Affiliation(s)
- Ahmed El Halawany
- CREOL, College of Optics and Photonics, University of Central Florida, Orlando, FL 32826, USA. Department of Physics, University of Central Florida, Orlando, FL 32816, USA
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15
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Okano M, Sakamoto M, Teranishi T, Kanemitsu Y. Assessment of Hot-Carrier Effects on Charge Separation in Type-II CdS/CdTe Heterostructured Nanorods. J Phys Chem Lett 2014; 5:2951-2956. [PMID: 26278242 DOI: 10.1021/jz501564q] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Charge separation in semiconducting materials is an essential process that determines the efficiency of photovoltaic devices and photocatalysts. Herein, we report the charge-separation dynamics in type-II CdS/CdTe heterostructured nanorods revealed by femtosecond transient-absorption (TA) measurements with a broad-band white-light probe. Under selective excitation of the CdTe segment, bleaching signals at the band gap energy of CdS were clearly observed with a rise component on a subpicosecond time scale, which indicates efficient electron transfer from CdTe to CdS. The pump-energy dependence of the TA dynamics shows that hot electrons rapidly relax to the bottom of the conduction band of CdTe, and then the electrons transfer to the CdS segment.
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Affiliation(s)
- Makoto Okano
- †Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
| | - Masanori Sakamoto
- †Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
- ‡Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
| | - Toshiharu Teranishi
- †Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
| | - Yoshihiko Kanemitsu
- †Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
- §Japan Science and Technology Agency, CREST, Uji, Kyoto 611-0011, Japan
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16
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Liu C, Peterson JJ, Krauss TD. Uncovering Hot Hole Dynamics in CdSe Nanocrystals. J Phys Chem Lett 2014; 5:3032-3036. [PMID: 26278255 DOI: 10.1021/jz5015554] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Single and multiple exciton relaxation dynamics of CdSe/CdZnS nanocrystal quantum dots (QDs) monitored at the two lowest optical transitions, 1Se-1S3/2 and 1Se-2S3/2, have been examined using ultrafast transient absorption (TA) spectroscopy. For the CdSe/CdZnS QDs studied, the 1Se-1S3/2 and 1Se-2S3/2 transitions are widely separated (∼180 meV) compared to bare CdSe QDs (∼50-100 meV), allowing for clearly distinguishable TA signals attributable to hot hole relaxation. Holes depopulate from the 2S3/2 state with a lifetime of 7 ± 2 ps, which is consistent with the predictions for hole relaxation via a phonon coupling pathway to lower-energy hole states, with possible contributions from hole trapping as well. These results suggest that tuning the surface chemistry of semiconductor QDs is a viable route to measure and possibly control their hot hole relaxation dynamics.
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Affiliation(s)
- Cunming Liu
- §Rochester Advanced Materials Program, †Department of Chemistry, and #The Institute of Optics, University of Rochester, Rochester, New York 14627, United States
| | - Jeffrey J Peterson
- §Rochester Advanced Materials Program, †Department of Chemistry, and #The Institute of Optics, University of Rochester, Rochester, New York 14627, United States
| | - Todd D Krauss
- §Rochester Advanced Materials Program, †Department of Chemistry, and #The Institute of Optics, University of Rochester, Rochester, New York 14627, United States
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17
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Dohnalová K, Gregorkiewicz T, Kůsová K. Silicon quantum dots: surface matters. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:173201. [PMID: 24713583 DOI: 10.1088/0953-8984/26/17/173201] [Citation(s) in RCA: 66] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers-silicon photonics and optoelectronics. Unlike any other quantum dots (QDs), SiQDs are made of non-toxic and abundant material, offering one of the spectrally broadest emission tunabilities accessible with semiconductor QDs and allowing for tailored radiative rates over many orders of magnitude. This extraordinary flexibility of optical properties is achieved via a combination of the spatial confinement of carriers and the strong influence of surface chemistry. The complex physics of this material, which is still being unraveled, leads to new effects, opening up new opportunities for applications. In this review we summarize the latest progress in this fascinating research field, with special attention given to surface-induced effects, such as the emergence of direct bandgap transitions, and collective effects in densely packed QDs, such as space separated quantum cutting.
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Affiliation(s)
- K Dohnalová
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam, The Netherlands
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18
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Yang Y, Lian T. Multiple exciton dissociation and hot electron extraction by ultrafast interfacial electron transfer from PbS QDs. Coord Chem Rev 2014. [DOI: 10.1016/j.ccr.2013.11.013] [Citation(s) in RCA: 37] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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19
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Rukhlenko ID, Leonov MY, Turkov VK, Litvin AP, Baimuratov AS, Baranov AV, Fedorov AV. Kinetics of pulse-induced photoluminescence from a semiconductor quantum dot. OPTICS EXPRESS 2012; 20:27612-27635. [PMID: 23262711 DOI: 10.1364/oe.20.027612] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Optical methods, which allow the determination of the dominant channels of energy and phase relaxation, are the most universal techniques for the investigation of semiconductor quantum dots. In this paper, we employ the kinetic Pauli equation to develop the first generalized model of the pulse-induced photoluminescence from the lowest-energy eigenstates of a semiconductor quantum dot. Without specifying the shape of the excitation pulse and by assuming that the energy and phase relaxation in the quantum dot may be characterized by a set of phenomenological rates, we derive an expression for the observable photoluminescence cross section, valid for an arbitrary number of the quantum dot's states decaying with the emission of secondary photons. Our treatment allows for thermal transitions occurring with both decrease and increase in energy between all the relevant eigenstates at room or higher temperature. We show that in the general case of N states coupled to each other through a bath, the photoluminescence kinetics from any of them is determined by the sum of N exponential functions, whose exponents are proportional to the respective decay rates. We illustrate the application of the developed model by considering the processes of resonant luminescence and thermalized luminescence from the quantum dot with two radiating eigenstates, and by assuming that the secondary emission is excited with either a Gaussian or exponential pulse. Analytic expressions describing the signals of secondary emission are analyzed, in order to elucidate experimental situations in which the relaxation constants may be reliably extracted from the photoluminescence spectra.
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Affiliation(s)
- Ivan D Rukhlenko
- Advanced Computing and Simulation Laboratory (AχL), Department of Electrical and Computer Systems Engineering, Monash University, Clayton, VIC 3800, Australia.
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20
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Sharafutdinov AU, Burmistrov IS. Cotunneling current through a two-level quantum dot coupled to magnetic leads: the role of exchange interaction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2012; 24:155301. [PMID: 22436594 DOI: 10.1088/0953-8984/24/15/155301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The cotunneling current through a two-level quantum dot weakly coupled to ferromagnetic leads is studied in the Coulomb blockade regime. The cotunneling current is calculated analytically under simple but realistic assumptions as follows: (i) the quantum dot is described by the universal Hamiltonian, (ii) it is doubly occupied, and (iii) it displays a fast spin relaxation. We find that the dependence of the differential conductance on the bias voltage is significantly affected by the exchange interaction on the quantum dot. In particular, for antiparallel magnetic configurations in the leads, the exchange interaction results in the appearance of interference-type contributions from the inelastic processes to the cotunneling current. Such dependence of the cotunneling current on the tunneling amplitude phases should also occur in multi-level quantum dots weakly coupled to ferromagnetic leads near the mesoscopic Stoner instabilities.
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21
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Stewart JT, Padilha LA, Qazilbash MM, Pietryga JM, Midgett AG, Luther JM, Beard MC, Nozik AJ, Klimov VI. Comparison of carrier multiplication yields in PbS and PbSe nanocrystals: the role of competing energy-loss processes. NANO LETTERS 2012; 12:622-628. [PMID: 22148950 DOI: 10.1021/nl203367m] [Citation(s) in RCA: 45] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Infrared band gap semiconductor nanocrystals are promising materials for exploring generation III photovoltaic concepts that rely on carrier multiplication or multiple exciton generation, the process in which a single high-energy photon generates more than one electron-hole pair. In this work, we present measurements of carrier multiplication yields and biexciton lifetimes for a large selection of PbS nanocrystals and compare these results to the well-studied PbSe nanocrystals. The similar bulk properties of PbS and PbSe make this an important comparison for discerning the pertinent properties that determine efficient carrier multiplication. We observe that PbS and PbSe have very similar biexciton lifetimes as a function of confinement energy. Together with the similar bulk properties, this suggests that the rates of multiexciton generation, which is the inverse of Auger recombination, are also similar. The carrier multiplication yields in PbS nanocrystals, however, are strikingly lower than those observed for PbSe nanocrystals. We suggest that this implies the rate of competing processes, such as phonon emission, is higher in PbS nanocrystals than in PbSe nanocrystals. Indeed, our estimations for phonon emission mediated by the polar Fröhlich-type interaction indicate that the corresponding energy-loss rate is approximately twice as large in PbS than in PbSe.
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Affiliation(s)
- John T Stewart
- Center for Advanced Solar Photophysics, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
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22
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Nozik AJ, Beard MC, Luther JM, Law M, Ellingson RJ, Johnson JC. Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells. Chem Rev 2010; 110:6873-90. [PMID: 20945911 DOI: 10.1021/cr900289f] [Citation(s) in RCA: 529] [Impact Index Per Article: 37.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- A. J. Nozik
- The National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States, Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, United States, Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States, and Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
| | - M. C. Beard
- The National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States, Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, United States, Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States, and Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
| | - J. M. Luther
- The National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States, Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, United States, Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States, and Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
| | - M. Law
- The National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States, Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, United States, Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States, and Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
| | - R. J. Ellingson
- The National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States, Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, United States, Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States, and Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
| | - J. C. Johnson
- The National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States, Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, United States, Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States, and Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
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23
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Grange T, Ferreira R, Bastard G. Theory of relaxation and decoherence of intersublevel transitions in semiconductor quantum dots. ACTA ACUST UNITED AC 2009. [DOI: 10.1088/1742-6596/193/1/012129] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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24
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Huxter VM, Scholes GD. Nonlinear optical approach to multiexciton relaxation dynamics in quantum dots. J Chem Phys 2006; 125:144716. [PMID: 17042640 DOI: 10.1063/1.2354480] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Unlike the majority of molecular systems quantum dots can accommodate multiple excitations, which is a particularly important attribute for potential lasing applications. We demonstrate in this work the concept of using nth order nonlinear spectroscopies in the transient grating configuration as a means of selectively exciting (n-1)/2 excitons in a semiconductor and probing the subsequent relaxation dynamics. We report a direct observation of multiparticle dynamics on ultrashort time scales through comparison of third and fifth order experiments for CdSe colloidal quantum dots. Time constants associated with multiexciton recombination and depopulation dynamics are reported. Deviation from a Poisson model for the distribution of photoexcited excitons, biexcitons, and triexcitons is also discussed.
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Affiliation(s)
- Vanessa M Huxter
- Lash-Miller Chemical Laboratories, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
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25
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Schaller RD, Pietryga JM, Goupalov SV, Petruska MA, Ivanov SA, Klimov VI. Breaking the phonon bottleneck in semiconductor nanocrystals via multiphonon emission induced by intrinsic nonadiabatic interactions. PHYSICAL REVIEW LETTERS 2005; 95:196401. [PMID: 16384000 DOI: 10.1103/physrevlett.95.196401] [Citation(s) in RCA: 117] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2005] [Indexed: 05/05/2023]
Abstract
We observe ultrafast 1P-to-1S intraband relaxation in PbSe and CdSe nanocrystals (NCs) that have distinct energy spectra. While ultrafast dynamics in CdSe NCs has typically been interpreted in terms of electron-hole energy transfer, this mechanism is not active in PbSe NCs because of sparse densities of states in the conduction and valence bands. Our observations of temperature activation and confinement-enhanced relaxation in PbSe NCs can be explained by efficient multiphonon emission triggered by nonadiabatic electron-phonon interactions and are indicative of large, size-dependent, intraband Huang-Rhys parameters.
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Affiliation(s)
- Richard D Schaller
- Chemistry Division, C-PCS, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
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26
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Guyot-Sionnest P, Wehrenberg B, Yu D. Intraband relaxation in CdSe nanocrystals and the strong influence of the surface ligands. J Chem Phys 2005; 123:074709. [PMID: 16229612 DOI: 10.1063/1.2004818] [Citation(s) in RCA: 163] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The intraband relaxation between the 1Pe and 1Se state of CdSe colloidal quantum dots is studied by pump-probe time-resolved spectroscopy. Infrared pump-probe measurements with approximately 6-ps pulses show identical relaxation whether the electron has been placed in the 1Se state by above band-gap photoexcitation or by electrochemical charging. This indicates that the intraband relaxation of the electrons is not affected by the photogenerated holes which have been trapped. However, the surface ligands are found to strongly affect the rate of relaxation in colloid solutions. Faster relaxation (<8 ps) is obtained with phosphonic acid and oleic acid ligands. Alkylamines lead to longer relaxation times of approximately 10 ps and the slowest relaxation is observed for dodecanethiol ligands with relaxation times approximately 30 ps. It is concluded that, in the absence of holes or when the holes are trapped, the intraband relaxation is dominated by the surface and faster relaxation correlates with larger interfacial polarity. Energy transfer to the ligand vibrations may be sufficiently effective to account for the intraband relaxation rate.
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27
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Bertoni A, Rontani M, Goldoni G, Molinari E. Reduced electron relaxation rate in multielectron quantum dots. PHYSICAL REVIEW LETTERS 2005; 95:066806. [PMID: 16090976 DOI: 10.1103/physrevlett.95.066806] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2005] [Indexed: 05/03/2023]
Abstract
We use a configuration-interaction approach and the Fermi golden rule to investigate electron-phonon interaction in multielectron quantum dots. Lifetimes are computed in the low-density, highly correlated regime. We report numerical evidence that electron-electron interaction generally leads to reduced decay rates of excited electronic states in weakly confined quantum dots, where carrier relaxation is dominated by the interaction with longitudinal acoustic phonons.
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Affiliation(s)
- Andrea Bertoni
- INFM National Research Center on nanoStructures and bioSystems at Surfaces (S3) and Dipartimento di Fisica, Università degli Studi di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena, Italy
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28
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Wang LW, Califano M, Zunger A, Franceschetti A. Pseudopotential theory of Auger processes in CdSe quantum dots. PHYSICAL REVIEW LETTERS 2003; 91:056404. [PMID: 12906614 DOI: 10.1103/physrevlett.91.056404] [Citation(s) in RCA: 128] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2002] [Indexed: 05/24/2023]
Abstract
Auger rates are calculated for CdSe colloidal quantum dots using atomistic empirical pseudopotential wave functions. We predict the dependence of Auger electron cooling on size, on correlation effects (included via configuration interaction), and on the presence of a spectator exciton. Auger multiexciton recombination rates are predicted for biexcitons as well as for triexcitons. The results agree quantitatively with recent measurements and offer new predictions.
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Affiliation(s)
- Lin-Wang Wang
- Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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29
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Darugar Q, Landes C, Link S, Schill A, El-Sayed M. Why is the thermalization of excited electrons in semiconductor nanoparticles so rapid? Studies on CdSe nanoparticles. Chem Phys Lett 2003. [DOI: 10.1016/s0009-2614(03)00213-6] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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30
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Sauvage S, Boucaud P, Lobo RPSM, Bras F, Fishman G, Prazeres R, Glotin F, Ortega JM, Gérard JM. Long polaron lifetime in InAs/GaAs self-assembled quantum dots. PHYSICAL REVIEW LETTERS 2002; 88:177402. [PMID: 12005783 DOI: 10.1103/physrevlett.88.177402] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2001] [Indexed: 05/23/2023]
Abstract
We have investigated the polaron dynamics in n-doped InAs/GaAs self-assembled quantum dots by pump-probe midinfrared spectroscopy. A long T1 polaron decay time is measured at both low temperature and room temperature, with values around 70 and 37 ps, respectively. The decay time decreases for energies closer to the optical phonon energy. The relaxation is explained by the strong coupling for the electron-phonon interaction and by the finite lifetime of the optical phonons. We show that, even for a large detuning of 19 meV from the LO photon energy in GaAs, the carrier relaxation remains phonon assisted.
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Affiliation(s)
- S Sauvage
- Institut d'Electronique Fondamentale, Bâtiment 220, Université Paris-Sud, 91405 Orsay, France
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Urayama J, Norris TB, Singh J, Bhattacharya P. Observation of phonon bottleneck in quantum dot electronic relaxation. PHYSICAL REVIEW LETTERS 2001; 86:4930-4933. [PMID: 11384384 DOI: 10.1103/physrevlett.86.4930] [Citation(s) in RCA: 50] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2000] [Indexed: 05/23/2023]
Abstract
Time-resolved differential transmission measurements of self-assembled In0.4Ga0.6As quantum dots clearly indicate a phonon bottleneck between the n = 2 and n = 1 electronic levels. The key to this observation is the generation of electrons in dots where there are no holes so that electron-hole scattering does not mask the bottleneck. We use a simple carrier capture model consisting of two capture configurations to explain the bottleneck signal and offer arguments to rule out other possible sources of the signal.
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Affiliation(s)
- J Urayama
- Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2099, USA
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33
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Nozik AJ. Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots. Annu Rev Phys Chem 2001; 52:193-231. [PMID: 11326064 DOI: 10.1146/annurev.physchem.52.1.193] [Citation(s) in RCA: 305] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Abstract
Photoexcitation of a semiconductor with photons above the semiconductor band gap creates electrons and holes that are out of equilibrium. The rates at which the photogenerated charge carriers return to equilibrium via thermalization through carrier scattering, cooling by phonon emission, and radiative and nonradiative recombination are important issues. The relaxation processes can be greatly affected by quantization effects that arise when the carriers are confined to regions of space that are small compared with their deBroglie wavelength or the Bohr radius of bulk excitons. The effects of size quantization in semiconductor quantum wells (carrier confinement in one dimension) and quantum dots (carrier confinement in three dimensions) on the respective carrier relaxation processes are reviewed, with emphasis on electron cooling dynamics. The implications of these effects for applications involving radiant energy conversion are also discussed.
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Affiliation(s)
- A J Nozik
- The National Renewable Energy Laboratory, Center for Basic Sciences, 1617 Cole Boulevard, Golden, Colorado 80401, USA.
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34
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Klimov VI. Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Nanocrystals. J Phys Chem B 2000. [DOI: 10.1021/jp9944132] [Citation(s) in RCA: 824] [Impact Index Per Article: 34.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Victor I. Klimov
- Chemical Science and Technology Division, CST-6, MS-J585, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Woggon U, Giessen H, Gindele F, Wind O, Fluegel B, Peyghambarian N. Ultrafast energy relaxation in quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:17681-17690. [PMID: 9985896 DOI: 10.1103/physrevb.54.17681] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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37
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Schmidt KH, Medeiros-Ribeiro G, Oestreich M, Petroff PM, Döhler GH. Carrier relaxation and electronic structure in InAs self-assembled quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11346-11353. [PMID: 9984923 DOI: 10.1103/physrevb.54.11346] [Citation(s) in RCA: 86] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Raymond S, Fafard S, Poole PJ, Wojs A, Hawrylak P, Charbonneau S, Leonard D, Leon R, Petroff PM, Merz JL. State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11548-11554. [PMID: 9984943 DOI: 10.1103/physrevb.54.11548] [Citation(s) in RCA: 78] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ohnesorge B, Albrecht M, Oshinowo J, Forchel A, Arakawa Y. Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11532-11538. [PMID: 9984941 DOI: 10.1103/physrevb.54.11532] [Citation(s) in RCA: 95] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Mukai K, Ohtsuka N, Shoji H, Sugawara M. Phonon bottleneck in self-formed InxGa1-xAs/GaAs quantum dots by electroluminescence and time-resolved photoluminescence. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:R5243-R5246. [PMID: 9986579 DOI: 10.1103/physrevb.54.r5243] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Schroeter DF, Griffiths DJ, Sercel PC. Defect-assisted relaxation in quantum dots at low temperature. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:1486-1489. [PMID: 9985979 DOI: 10.1103/physrevb.54.1486] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Liang SD, Chen CY, Jiang SC, Lin DL. Size effect on exciton-phonon scattering in quantum wires. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:15459-15461. [PMID: 9983371 DOI: 10.1103/physrevb.53.15459] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gfroerer TH, Sturge MD, Kash K, Yater JA, Plaut AS, Lin PS, Florez LT, Harbison JP, Das SR, Lebrun L. Slow relaxation of excited states in strain-induced quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:16474-16480. [PMID: 9983489 DOI: 10.1103/physrevb.53.16474] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Notomi M, Furuta T, Kamada H, Temmyo J, Tamamura T. Microscopic excitation spectroscopy for zero-dimensional quantized states of individual InxGa1-xAs/AlyGa1-yAs quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:15743-15748. [PMID: 9983410 DOI: 10.1103/physrevb.53.15743] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bockelmann U, Roussignol P, Filoramo A, Heller W, Abstreiter G, Brunner K, Böhm G, Weimann G. Time resolved spectroscopy of single quantum dots: Fermi gas of excitons? PHYSICAL REVIEW LETTERS 1996; 76:3622-3625. [PMID: 10061014 DOI: 10.1103/physrevlett.76.3622] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Badalian SM. Electron relaxation in the quantum-Hall-effect geometry: One- and two-phonon processes. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:14781-14788. [PMID: 9980816 DOI: 10.1103/physrevb.52.14781] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Teitsworth SW, Stroscio MA. Interface phonons in spherical GaAs/AlxGa1-xAs quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:1489-1492. [PMID: 9981202 DOI: 10.1103/physrevb.52.1489] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Sercel PC. Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:14532-14541. [PMID: 9978385 DOI: 10.1103/physrevb.51.14532] [Citation(s) in RCA: 63] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Benisty H. Reduced electron-phonon relaxation rates in quantum-box systems: Theoretical analysis. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:13281-13293. [PMID: 9978131 DOI: 10.1103/physrevb.51.13281] [Citation(s) in RCA: 63] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Aksenov I, Kusano J, Aoyagi Y, Sugano T, Yasuda T, Segawa Y. Effect of a magnetic field on the excitonic luminescence line shape in a quantum well. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:4278-4284. [PMID: 9979269 DOI: 10.1103/physrevb.51.4278] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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