Optical nonlinearities in multiple quantum wells: Generalized Elliott formula

Thickness-Dependent Dark-Bright Exciton Splitting and Phonon Bottleneck in CsPbBr3-Based Nanoplatelets Revealed via Magneto-Optical Spectroscopy

The optimized exploitation of perovskite nanocrystals and nanoplatelets as highly efficient light sources requires a detailed understanding of the energy spacing within the exciton manifold. Dark exciton states are particularly relevant because they represent a channel that reduces radiative efficiency. Here, we apply large in-plane magnetic fields to brighten optically inactive states of CsPbBr₃-based nanoplatelets for the first time. This approach allows us to access the dark states and directly determine the dark-bright splitting, which reaches 22 meV for the thinnest nanoplatelets. The splitting is significantly less for thicker nanoplatelets due to reduced exciton confinement. Additionally, the form of the magneto-PL spectrum suggests that dark and bright state populations are nonthermalized, which is indicative of a phonon bottleneck in the exciton relaxation process.

Tuning Spin-Polarized Lifetime in Two-Dimensional Metal-Halide Perovskite through Exciton Binding Energy

Metal-halide perovskite semiconductors have attracted attention for opto-spintronic applications where the manipulation of charge and spin degrees of freedom have the potential to lower power consumption and achieve faster switching times for electronic devices. Lower-dimensional perovskites are of particular interest since the lower degree of symmetry of the metal-halide connected octahedra and the large spin-orbit coupling can potentially lift the spin degeneracy. To achieve their full application potential, long spin-polarized lifetimes and an understanding of spin-relaxation in these systems are needed. Here, we report an intriguing spin-selective excitation of excitons in a series of 2D lead iodide perovskite (n = 1) single crystals by using time- and polarization-resolved transient reflection spectroscopy. Exciton spin relaxation times as long as ∼26 ps at low excitation densities and at room temperature were achieved for a system with small binding energy, 2D EOA₂PbI₄ (EOA = ethanolamine). By tuning the excitation density and the exciton binding energy, we identify the dominant mechanism as the D'yakonov-Perel (DP) mechanism at low exciton densities and the Bir-Aronov-Pikus (BAP) mechanism at high excitation densities. Together, these results provide new design principles to achieve long spin lifetimes in metal-halide perovskite semiconductors.

Dielectric Screening Modulates Semiconductor Nanoplatelet Excitons

The influence of external dielectric environments is well understood for 2D semiconductor materials but overlooked for colloidally grown II-VI nanoplatelets (NPLs). In this work, we synthesize MX (M = Cd, Hg; X = Se, Te) NPLs of varying thicknesses and apply the Elliott model to extract exciton binding energies-reporting values in good agreement with prior methods and extending to less studied cadmium telluride and mercury chalcogenide NPLs. We find that the exciton binding energy is modulated both by the relative effect of internal vs external dielectric and by the thickness of the semiconductor material. An analytical model shows dielectric screening increases the exciton binding energy relative to the bulk by distorting the Coulombic potential across the NPL surface. We further confirm this effect by decreasing and recovering the exciton binding energy of HgTe NPLs through washing in polarizable solvents. Our results illustrate NPLs are colloidal analogues of van der Waals 2D semiconductors and point to surface modification as an approach to control photophysics and device properties.

All-optical switching and pulse routing in a distributed-feedback waveguide device

Results of all-optical switching and pulse-routing experiments with a distributed-feedback multiple-quantum-well (MQW) nonlinear waveguide, operating at 1.55microm , are reported. The MQW material has been engineered, through the controlled introduction of defects, to lower the carrier lifetime from 2.5 ns to 280 ps. The energy required for switching is of the order of 1 pJ or less, the switching time is ~600 ps , and the on-off contrast exceeds 17 dB.