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Aliramaji S, Keuter P, Neuß D, Hans M, Primetzhofer D, Depla D, Schneider JM. Effect of Growth Temperature and Atmosphere Exposure Time on Impurity Incorporation in Sputtered Mg, Al, and Ca Thin Films. MATERIALS (BASEL, SWITZERLAND) 2023; 16:414. [PMID: 36614754 PMCID: PMC9822154 DOI: 10.3390/ma16010414] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 12/27/2022] [Accepted: 12/28/2022] [Indexed: 06/17/2023]
Abstract
Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.
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Affiliation(s)
- Shamsa Aliramaji
- Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany
| | - Philipp Keuter
- Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany
| | - Deborah Neuß
- Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany
| | - Marcus Hans
- Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany
| | - Daniel Primetzhofer
- Department of Physics and Astronomy, Uppsala University, Box 516, S-75120 Uppsala, Sweden
| | - Diederik Depla
- Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), B-9000 Gent, Belgium
| | - Jochen M. Schneider
- Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany
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Effect of Ni Doping on the Embrittlement of Liquid Zinc at Σ5 Fe Austenite Grain Boundary. METALS 2021. [DOI: 10.3390/met12010027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
In this study, first-principles computational tensile tests have been performed for the Σ5 symmetrically tilted grain boundaries of the face-centered cubic (fcc) Fe to investigate the effects of Zn and Zn-Ni doping on the boundary energy and electronic structure. The obtained results indicate that the mismatch between the sizes of Zn and Fe atoms at the Zn-doped grain boundary causes its expansion, which increases the lengths of Fe-Fe bonds, leading to their weakening, and reduces the overall boundary strength. After the Zn doping of the Fe grain boundary, Zn atoms form covalent bonds with Fe atoms, that decreases the charge density of Fe-Fe bonds and their strength. Meanwhile, the strength of the newly formed Fe-Zn covalent bonds oriented at a certain angle with respect to the grain boundary direction is very low. The breakage of Fe-Fe bonds that occurs under tensile loading rapidly decreases the boundary strength. Finally, after the Zn-Ni co-doping of the Fe grain boundary, Ni atoms form metallic bonds with Fe atoms, thus increasing both the charge density of Fe-Fe bonds (as compared with that of the Fe-Fe bonds at the Zn-doped grain boundary).
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Yang T, Zhao YL, Li WP, Yu CY, Luan JH, Lin DY, Fan L, Jiao ZB, Liu WH, Liu XJ, Kai JJ, Huang JC, Liu CT. Ultrahigh-strength and ductile superlattice alloys with nanoscale disordered interfaces. Science 2020; 369:427-432. [PMID: 32703875 DOI: 10.1126/science.abb6830] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2020] [Accepted: 06/08/2020] [Indexed: 12/24/2022]
Abstract
Alloys that have high strengths at high temperatures are crucial for a variety of important industries including aerospace. Alloys with ordered superlattice structures are attractive for this purpose but generally suffer from poor ductility and rapid grain coarsening. We discovered that nanoscale disordered interfaces can effectively overcome these problems. Interfacial disordering is driven by multielement cosegregation that creates a distinctive nanolayer between adjacent micrometer-scale superlattice grains. This nanolayer acts as a sustainable ductilizing source, which prevents brittle intergranular fractures by enhancing dislocation mobilities. Our superlattice materials have ultrahigh strengths of 1.6 gigapascals with tensile ductilities of 25% at ambient temperature. Simultaneously, we achieved negligible grain coarsening with exceptional softening resistance at elevated temperatures. Designing similar nanolayers may open a pathway for further optimization of alloy properties.
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Affiliation(s)
- T Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, China.,Hong Kong Institute for Advanced Study, City University of Hong Kong, Hong Kong, China
| | - Y L Zhao
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, China.,Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China
| | - W P Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China
| | - C Y Yu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - J H Luan
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China
| | - D Y Lin
- Software Center for High Performance Numerical Simulation and Institute of Applied Physics and Computational Mathematics, Chinese Academy of Engineering Physics, Beijing, China
| | - L Fan
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong, China
| | - Z B Jiao
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong, China
| | - W H Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China
| | - X J Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China.,Institute of Materials Genome and Big Data, Harbin Institute of Technology, Shenzhen, China
| | - J J Kai
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, China.,Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China
| | - J C Huang
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Hong Kong, China.,Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China
| | - C T Liu
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, China. .,Hong Kong Institute for Advanced Study, City University of Hong Kong, Hong Kong, China.,Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China
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Iotova D, Kioussis N, Lim SP. Electronic structure and elastic properties of the Ni3X (X=Mn, Al, Ga, Si, Ge) intermetallics. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:14413-14422. [PMID: 9985447 DOI: 10.1103/physrevb.54.14413] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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