Compositional defects in a MoAlB MAB phase thin film grown by high-power pulsed magnetron sputtering

Various compositional defects such as Mo3Al2B4, Mo4Al3B4, Mo6Al5B6 and Al3Mo, together with MoB MBene, are observed to be coexisting in a MoAlB MAB phase thin film grown at 800 °C by high-power pulsed magnetron sputtering. An overall film composition of Mo0.29Al0.33B0.38 is measured by time-of-flight elastic recoil detection analysis. The concurrent formation of these compositional defects in the MoAlB matrix occurs during the synthesis without using any chemical reagent, and their coexistence with the MAB phase is thermodynamically possible, as elucidated by density functional theory simulations. These defect phases are imaged at the atomic scale by aberration-corrected scanning transmission electron microscopy. A rough estimation of defect populations of 0.073, 0.037, 0.042 and 0.039 nm-1 for Mo3Al2B4, Mo4Al3B4, Mo6Al5B6 and Al3Mo compositional defects, respectively, is performed within the MoAlB matrix. The calculated energies of formation reveal that the Mo4Al3B4 and Mo6Al5B6 defect phases form spontaneously in the MoAlB host matrix, while the energy barrier towards the formation of the metastable Mo3Al2B4 phase is approx. 20 meV per atom. The small magnitude of this barrier is easily overcome during vapor phase condensation, and the surface diffusion of adatoms during deposition leads to local compositional variations and the coexistence of the defect phases in the host matrix. Additionally, at grain boundaries, the presence of MoB MBene is observed, with an interlayer spacing between two Mo2B2 units increasing up to ∼50% compared to the pristine MoAlB phase.

Decomposition of CrN induced by laser-assisted atom probe tomography

It is known that measurement parameters can significantly influence the elemental composition determined by atom probe tomography (APT). Especially results obtained by laser-assisted APT show a strong effect of the laser pulse energy on the apparent elemental composition. Within this study laser-assisted APT experiments were performed on Cr_0.51N_0.49 and thermally more stable (Cr_0.47Al_0.53)_0.49N_0.51, comparing two different base temperatures (i.e. 15 and 60 K), laser wavelengths (i.e. 532 and 355 nm) and systematically modified laser pulse energies. Absolute chemical compositions from laser-assisted APT were compared to data obtained from ion beam analysis. The deduced elemental composition of CrN exhibited a strong increase of the Cr content when the laser pulse energy was increased for both laser wavelengths. For low laser pulse energies Cr, CrN, N and N₂ ions were identified, while the amount of detected Cr ions increased and the amount of N ions strongly decreased at higher laser pulse energies. Further, increased detection of more complex Cr-containing ions such as Cr₂N at the expense of CrN was observed at higher pulse energies. At the highest pulse energy levels used within this work, the resulting Cr content was > 80 at%, dominated by the amount of detected elemental Cr ions. The change of the mass spectrum of the detected ions with increasing laser pulse energy provides evidence that high laser pulse energies initiate the decomposition of CrN during the APT measurement, consistent with the known thermal decomposition path into Cr₂N and subsequently into Cr and gaseous N. In contrast, variation of the laser pulse energy for the thermally more stable CrAlN resulted only in a slight increase of Cr and a decrease of the resulting concentrations of Al and N with increasing laser pulse energy and no change in the type of detected ions. In conclusion, within the present study, the decomposition of a coating material with low thermal stability induced by laser-assisted APT was reported for the first time, emphasizing the importance of the selection of suitable measurement parameters for metastable materials, which are prone to thermal decomposition.

A new setup for optical measurements under controlled environment

We present a new analytical instrument for studying the optical properties of materials in different gaseous environments at room and controlled elevated temperatures. The system consists of a vacuum chamber, which is equipped with temperature and pressure controllers, a heating band, and a residual gas analyzer and is connected to a gas feeding line via a leak valve. Two transparent view ports located around a sample holder allow for optical transmission and pump-probe spectroscopy using an external optical setup. The capabilities of the setup are demonstrated by conducting two experiments. In the first experiment, we study the photodarkening and bleaching kinetics of photochromic oxygen-containing yttrium hydride thin films illuminated in ultra high-vacuum and correlate it with changes in partial pressures inside the vacuum chamber. In the second study, we investigate changes in the optical properties of a 50 nm V film upon hydrogen absorption.

Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electrons

A recently presented chemical vapor deposition (CVD) method involves using plasma electrons as reducing agents for deposition of metals. The plasma electrons are attracted to the substrate surface by a positive substrate bias. Here, we present how a standard quartz crystal microbalance (QCM) system can be modified to allow applying a DC bias to the QCM sensor to attract plasma electrons to it and thereby also enable in situ growth monitoring during the electron-assisted CVD method. We show initial results from mass gain evolution over time during deposition of iron films using the biased QCM and how the biased QCM can be used for process development and provide insight into the surface chemistry by time-resolving the CVD method. Post-deposition analyses of the QCM crystals by cross-section electron microscopy and high-resolution x-ray photoelectron spectroscopy show that the QCM crystals are coated by an iron-containing film and thus function as substrates in the CVD process. A comparison of the areal mass density given by the QCM crystal and the areal mass density from elastic recoil detection analysis and Rutherford backscattering spectrometry was done to verify the function of the QCM setup. Time-resolved CVD experiments show that this biased QCM method holds great promise as one of the tools for understanding the surface chemistry of the newly developed CVD method.

Effect of Growth Temperature and Atmosphere Exposure Time on Impurity Incorporation in Sputtered Mg, Al, and Ca Thin Films

Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.

High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility. Herein, we demonstrate a full-inorganic nanoscale flexible memristor by using free-standing ductile α-Ag₂S films as both a flexible substrate and a functional electrolyte. The device accesses dense multiple-level nonvolatile states with a record high 10⁶ ON/OFF ratio. This exceptional memristor performance is induced by sequential processes of Schottky barrier modification at the contact interface and filament formation inside the electrolyte. In addition, it is crucial to ensure that the cathode junction, where Ag⁺ is reduced to Ag, dominates the total resistance and takes the most of setting bias before the filament formation. Our study provides a comprehensive insight into the resistance-switching mechanism in conductive-bridging memristors and offers a new strategy toward high performance flexible memristors.

Evidence for postnatal neurogenesis in the human amygdala

The human amygdala is involved in processing of memory, decision-making, and emotional responses. Previous studies suggested that the amygdala may represent a neurogenic niche in mammals. By combining two distinct methodological approaches, lipofuscin quantification and ¹⁴C-based retrospective birth dating of neurons, along with mathematical modelling, we here explored whether postnatal neurogenesis exists in the human amygdala. We investigated post-mortem samples of twelve neurologically healthy subjects. The average rate of lipofuscin-negative neurons was 3.4%, representing a substantial proportion of cells substantially younger than the individual. Mass spectrometry analysis of genomic ¹⁴C-concentrations in amygdala neurons compared with atmospheric ¹⁴C-levels provided evidence for postnatal neuronal exchange. Mathematical modelling identified a best-fitting scenario comprising of a quiescent and a renewing neuronal population with an overall renewal rate of >2.7% per year. In conclusion, we provide evidence for postnatal neurogenesis in the human amygdala with cell turnover rates comparable to the hippocampus.

Lipofuscin labeling and ¹⁴ C retrospective birth-dating of neurons, along with mathematical modelling, here suggest continued postnatal neurogenesis in the human amygdala, rather than protracted maturation of developmentally generated neurons.

Oxygen mobility in yttrium hydride films studied by isotopic labelling

The photochromic properties of oxygen-containing yttrium hydride thin films are directly dependent on the oxygen concentration in the material. We use 16O/18O labelling to study oxidation of YH2 films. Oxygen penetrates the film through grain boundaries and intercolumnar voids oxidising the whole film thickness, without pronounced surface oxidation or self-passivation. Once oxidised, the mobility of oxygen in the films is low and no detectable changes in chemical composition of 18O-labeled YHO films is found under illumination.

Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis

Understanding phase transitions of ultrathin metal silicides is crucial for the development of nanoscale silicon devices. Here, the phase transition of ultrathin (3.6 nm) Ni silicides on Si(100) substrates is investigated using an in situ synthesis and characterization approach, supplemented with ex situ transmission electron microscopy and nano-beam electron diffraction. First, an ultrathin epitaxial layer and ordered structures at the interface are observed upon room-temperature deposition. At 290 °C, this structure is followed by formation of an orthorhombic δ-Ni₂ Si phase exhibiting long-range order and extending to the whole film thickness. An unprecedented direct transition from this δ-Ni₂ Si phase to the final NiSi_{2- x} phase is observed at 290 °C, skipping the intermediate monosilicide phase. Additionally, the NiSi_{2- x} phase is found epitaxial on the substrate. This transition process substantially differs from observations for thicker films. Furthermore, considering previous studies, the long-range ordered orthorhombic δ-Ni₂ Si phase is suggested to occur regardless of the initial Ni thickness. The thickness of this ordered δ-Ni₂ Si layer is, however, limited due to the competition of different orientations of the δ-Ni₂ Si crystal. Whether the formed δ-Ni₂ Si layer consumes all deposited nickel is expected to determine whether the monosilicide phase appears before the transition to the final NiSi_{2- x} phase.

Ag Surface and Bulk Segregations in Sputtered ZrCuAlNi Metallic Glass Thin Films

We report on the formation of Ag-containing ZrCuAlNi thin film metallic glass (nano)composites by a hybrid direct-current magnetron sputtering and high-power pulsed magnetron sputtering process. The effects of Ag content, substrate temperature and substrate bias potential on the phase formation and morphology of the nanocomposites were investigated. While applying a substrate bias potential did not strongly affect the morphological evolution of the films, the Ag content dictated the size and distribution of Ag surface segregations. The films deposited at low temperatures were characterized by strong surface segregations, formed by coalescence and Ostwald ripening, while the volume of the films remained featureless. At higher deposition temperature, elongated Ag segregations were observed in the bulk and a continuous Ag layer was formed at the surface as a result of thermally enhanced surface diffusion. While microstructural observations have allowed identifying both surface and bulk segregations, an indirect method for detecting the presence of Ag segregations is proposed, by measuring the electrical resistivity of the films.

Self-Limited Formation of Bowl-Shaped Nanopores for Directional DNA Translocation

Solid-state nanopores of on-demand dimensions and shape can facilitate desired sensor functions. However, reproducible fabrication of arrayed nanopores of predefined dimensions remains challenging despite numerous techniques explored. Here, bowl-shaped nanopores combining properties of ultrathin membrane and tapering geometry are manufactured using a self-limiting process developed on the basis of standard silicon technology. The upper opening of the bowl-nanopores is 60-120 nm in diameter, and the bottom orifice reaches sub-5 nm. Current-voltage characteristics of the fabricated bowl-nanopores display insignificant rectification indicating weak ionic selectivity, in accordance to numerical simulations showing minor differences in electric field and ionic velocity upon the reversal of bias voltages. Simulations reveal, concomitantly, high-momentum electroosmotic flow downward along the concave nanopore sidewall. Collisions between the left and right tributaries over the bottom orifice drive the electroosmotic flow both up into the nanopore and down out of the nanopore through the orifice. The resultant asymmetry in electrophoretic-electroosmotic force is considered the cause responsible for the experimentally observed strong directionality in λ-DNA translocation with larger amplitude, longer duration, and higher frequencies for the downward movements from the upper opening than the upward ones from the orifice. Thus, the resourceful silicon nanofabrication technology is shown to enable nanopore designs toward enriching sensor applications.

Direct MoB MBene domain formation in magnetron sputtered MoAlB thin films

Two-dimensional (2D) inorganic transition metal boride nanosheets are emerging as promising post-graphene materials in energy research due to their unique properties. State-of-the-art processing strategies are based on chemical etching of bulk material synthesized via solid-state reaction at temperatures above 1000 °C. Here, we report the direct formation of MoB MBene domains in a MoAlB thin film by Al deintercalation from MoAlB in the vicinity of AlO_x regions. Hence, based on these results a straightforward processing pathway for the direct formation of MoB MBene-AlO_x heterostructures without employing chemical etching is proposed here.

Elemental Depth Profiling of Intact Metal-Organic Framework Single Crystals by Scanning Nuclear Microprobe

The growing field of MOF–catalyst composites often relies on postsynthetic modifications for the installation of active sites. In the resulting MOFs, the spatial distribution of the inserted catalysts has far-reaching ramifications for the performance of the system and thus needs to be precisely determined. Herein, we report the application of a scanning nuclear microprobe for accurate and nondestructive depth profiling of individual UiO-66 and UiO-67 (UiO = Universitetet i Oslo) single crystals. Initial optimization work using native UiO-66 crystals yielded a microbeam method which avoided beam damage, while subsequent analysis of Zr/Hf mixed-metal UiO-66 crystals demonstrated the potential of the method to obtain high-resolution depth profiles. The microbeam method was further used to analyze the depth distribution of postsynthetically introduced organic moieties, revealing either core–shell or uniform incorporation can be obtained depending on the size of the introduced molecule, as well as the number of carboxylate binding groups. Finally, the spatial distribution of platinum centers that were postsynthetically installed in the bpy binding pockets of UiO-67-bpy (bpy = 5,5′-dicarboxyy-2,2′-bipyridine) was analyzed by microbeam and contextualized. We expect that the method presented herein will be applicable for characterizing a wide variety of MOFs subjected to postsynthetic modifications and provide information crucial for their optimization as functional materials.

Toxicity of stainless and mild steel particles generated from gas-metal arc welding in primary human small airway epithelial cells

Welding fumes induce lung toxicity and are carcinogenic to humans but the molecular mechanisms have yet to be clarified. The aim of this study was to evaluate the toxicity of stainless and mild steel particles generated via gas-metal arc welding using primary human small airway epithelial cells (hSAEC) and ToxTracker reporter murine stem cells, which track activation of six cancer-related pathways. Metal content (Fe, Mn, Ni, Cr) of the particles was relatively homogenous across particle size. The particles were not cytotoxic in reporter stem cells but stainless steel particles activated the Nrf2-dependent oxidative stress pathway. In hSAEC, both particle types induced time- and dose-dependent cytotoxicity, and stainless steel particles also increased generation of reactive oxygen species. The cellular metal content was higher for hSAEC compared to the reporter stem cells exposed to the same nominal dose. This was, in part, related to differences in particle agglomeration/sedimentation in the different cell media. Overall, our study showed differences in cytotoxicity and activation of cancer-related pathways between stainless and mild steel welding particles. Moreover, our data emphasizes the need for careful assessment of the cellular dose when comparing studies using different in vitro models.

Mn-Rich MnSb2 Te4 : A Topological Insulator with Magnetic Gap Closing at High Curie Temperatures of 45-50 K

Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect, which is potentially useful for high-precision metrology, edge channel spintronics, and topological qubits.  The stable 2+ state of Mn enables intrinsic magnetic topological insulators. MnBi2 Te4 is, however, antiferromagnetic with 25 K Néel temperature and is strongly n-doped. In this work, p-type MnSb2 Te4 , previously considered topologically trivial, is shown to be a ferromagnetic topological insulator for a few percent Mn excess. i) Ferromagnetic hysteresis with record Curie temperature of 45-50 K, ii) out-of-plane magnetic anisotropy, iii) a 2D Dirac cone with the Dirac point close to the Fermi level, iv) out-of-plane spin polarization as revealed by photoelectron spectroscopy, and v) a magnetically induced bandgap closing at the Curie temperature, demonstrated by scanning tunneling spectroscopy (STS), are shown. Moreover, a critical exponent of the magnetization β ≈ 1 is found, indicating the vicinity of a quantum critical point. Ab initio calculations reveal that Mn-Sb site exchange provides the ferromagnetic interlayer coupling and the slight excess of Mn nearly doubles the Curie temperature. Remaining deviations from the ferromagnetic order open the inverted bulk bandgap and render MnSb2 Te4 a robust topological insulator and new benchmark for magnetic topological insulators.

Interstitial Hydrogen in Fe/V Superstructures: Lattice Site Location and Thermal Vibration

We report real space location of hydrogen in single crystalline Fe/V superstructures. Anisotropic strain is quantified versus hydrogen concentration by using the yield of backscattered primary 2 MeV ^{4}He ions for incidence in different crystallographic directions. From a comparison of ion channeling in combination with ^{1}H(^{15}N,αγ)^{12}C nuclear reaction analysis and Monte Carlo simulations we show that hydrogen is located in octahedral z sites and quantify its vibrational amplitude of 0.2 Å.

P-type cobaltite oxide spinels enable efficient electrocatalytic oxygen evolution reaction

Currently, energy-efficient electrocatalytic oxygen evolution from water involves the use of noble metal oxides. Here, we show that highly p-conducting zinc cobaltite spinel Zn1.2Co1.8O3.5 offers an enhanced electrocatalytic activity for oxygen evolution. We refer to previous studies on sputtered Zn-Co spinels with optimized conductivity for implementation as (p-type) transparent conducting oxides. Based on that, we manufacture off-stoichiometric conducting p-spinel catalytic anodes on tetragonal Ti, Au-Ti and hexagonal Al-doped ZnO carriers and report the evolution of O2 at Tafel slopes between 40.5 and 48 mV dec-1 and at overpotentials between 0.35 and 0.43 V (at 10 mA cm-2). The anodic stability, i.e., 50 h of continuous O2 electrolysis in 1 M KOH, suggests that increasing the conductivity is advantageous for electrolysis, particularly for reducing the ohmic losses and ensuring activity across the entire surface. We conclude by pointing out the merits of improving p-doping in Zn-Co spinels by optimized growth on a tetragonal Ti-carrier and their application as dimension-stable 3d-metal anodes.

Determining the chronological sequence of inks deposited with different writing and printing tools using ion beam analysis

Determining the sequence of inks in a questioned document is important in forensic science. Conventional and micro beam-based ion beam analysis using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission were employed to study the depth distribution of chemical elements in plain paper and inks/toner deposited by different pens as well as inkjet and laser printers. Composition depth profiling with high lateral resolution was performed with focus on areas where two different coloring agents overlapped. We identify under which conditions the sequence of inks deposited can be reconstructed, analyzing the continuity of characteristic contributions to the obtained signals, with a focus on the depth-resolved RBS data. The order of deposition was correctly determined for combinations of two different laser printers and in certain cases for pens. Results indicate a potential for analysis, depending on the composition of staining agent, that is, in particular if heavy species are present in sufficiently high concentration. In such cases, also characters obscured or modified by an agent of different composition can be revealed. Changing the probing depth by modifying the beam energy could yield additional information.

A Proposal for a Composite with Temperature-Independent Thermophysical Properties: HfV2-HfV2O7

The HfV2-HfV2O7 composite is proposed as a material with potentially temperature-independent thermophysical properties due to the combination of anomalously increasing thermoelastic constants of HfV2 with the negative thermal expansion of HfV2O7. Based on literature data, the coexistence of both a near-zero temperature coefficient of elasticity and a coefficient of thermal expansion is suggested for a composite with a phase fraction of approximately 30 vol.% HfV2 and 70 vol.% HfV2O7. To produce HfV2-HfV2O7 composites, two synthesis pathways were investigated: (1) annealing of sputtered HfV2 films in air to form HfV2O7 oxide on the surface and (2) sputtering of HfV2O7/HfV2 bilayers. The high oxygen mobility in HfV2 is suggested to inhibit the formation of crystalline HfV2-HfV2O7 composites by annealing HfV2 in air due to oxygen-incorporation-induced amorphization of HfV2. Reducing the formation temperature of crystalline HfV2O7 from 550 °C, as obtained upon annealing, to 300 °C using reactive sputtering enables the synthesis of crystalline bilayered HfV2-HfV2O7.

Contrast modes in a 3D ion transmission approach at keV energies

We present options for visualizing contrast maps in 3D ion transmission experiments. Simultaneous measurement of angular distributions and flight time of ions transmitted through self-supporting, single-crystalline silicon foils allows for mapping of intensity and different energy loss moments. The transmitted projectiles were detected mainly for random beam-sample orientation using pulsed beams of He ions and protons with incident energies 50 and 200 keV. Differences in contrast, observed when varying the projectile type and energy, can be attributed to sample nuclear and electronic structure and bear witness to impact parameter dependent energy loss processes. Our results provide a base for interpretation of data obtained in prospective transmission studies when for example using a helium ion microscope.

In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering

Epitaxial ultrathin films are of utmost importance for state-of-the-art nanoelectronic devices, such as MOSFET transistors and non-volatile memories. At the same time, as the film thickness is reduced to a few nanometers, characterization of the materials is becoming challenging for commonly used methods. In this report, we demonstrate an approach for in-situ characterization of phase transitions of ultrathin nickel silicides using 3D medium-energy ion scattering. The technique provides simultaneously depth-resolved composition and real-space crystallography of the silicide films using a single sample and with a non-invasive probe. We show, for 10 nm Ni films on Si, that their composition follows a normal transition sequence, such as Ni-Ni2Si-NiSi. However, the transition process is significantly different for samples with initial Ni thickness of 3 nm. Depth-resolved crystallography shows that the Ni films transform from an as-deposited disordered layer to an epitaxial silicide layer at the temperature of ~290 °C, significantly lower than previously reported. The high depth resolution of the technique permits us to determine the composition of the ultrathin films to be 38% Ni and 62% Si.

Electronic excitation of transition metal nitrides by light ions with keV energies

We investigated the specific electronic energy deposition by protons and He ions with keV energies in different transition metal nitrides of technological interest. Data were obtained from two different time-of-flight ion scattering setups and show excellent agreement. For protons interacting with light nitrides, i.e. TiN, VN and CrN, very similar stopping cross sections per atom were found, which coincide with literature data of N2 gas for primary energies ⩽25 keV. In case of the chemically rather similar nitrides with metal constituents from the 5th and 6th period, i.e. ZrN and HfN, the electronic stopping cross sections were measured to exceed what has been observed for molecular N2 gas. For He ions, electronic energy loss in all nitrides was found to be significantly higher compared to the equivalent data of N2 gas. Additionally, deviations from velocity proportionality of the observed specific electronic energy loss are observed. A comparison with predictions from density functional theory for protons and He ions yields a high apparent efficiency of electronic excitations of the target for the latter projectile. These findings are considered to indicate the contributions of additional mechanisms besides electron hole pair excitations, such as electron capture and loss processes of the projectile or promotion of target electrons in atomic collisions.

Disparate Energy Scaling of Trajectory-Dependent Electronic Excitations for Slow Protons and He Ions

We have simultaneously measured angular distributions and electronic energy loss of helium ions and protons directly transmitted through self-supporting, single-crystalline silicon foils. We have compared the energy loss along channeled and random trajectories for incident ion energies between 50 and 200 keV. For all studied cases the energy loss in channeling geometry is found lower than in random geometry. In the case of protons, this difference increases with initial ion energy. This behavior can be explained by the increasing contribution of excitations of core electrons, which are more likely to happen at small impact parameters accessible only in random geometry. For helium ions we observe a reverse trend-a decrease of the difference between channeled and random energy loss for increasing ion energy. Because of the inefficiency of core-electron excitations even at small impact parameters at such low energies, another mechanism has to be the cause for the observed difference. We provide evidence that the observation originates from reionization events induced by close collisions of helium ions occurring only along random trajectories.

Aggregation of Au(i)-complexes on amorphous substrates governed by aurophilicity

In single crystals of 2-naphthylisonitrile-gold(i)-halide (halide = Cl, Br, I) complexes, AuAu distances are found to be significantly shorter than twice the van der Waals radius, indicating attractive interactions between gold atoms in adjacent molecules. In the particular case of the studied 2-naphthylisonitrile-gold(i) complexes, homodimers are the common structural motifs, in which the linearly coordinated gold exhibits a crossed swords arrangement with the Au atoms of two molecules being at the intersection point. The crossed swords motif is preserved upon physical vapour deposition of both the chlorine and bromine derivatives on amorphous substrates like glass and glassy carbon. The determined activation energies of desorption for the chlorine (0.9 eV) and the bromine (1.2 eV) derivative are comparable to that of unsubstituted naphthalene. Using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ion scattering (RBS), we confirmed the chemical integrity of the molecules in thin films and revealed the orientation of the crossed swords dimers with respect to the substrate surface.

Remote Tracking of Phase Changes in Cr2AlC Thin Films by In-situ Resistivity Measurements

Resistivity changes of magnetron sputtered, amorphous Cr₂AlC thin films were measured during heating in vacuum. Based on correlative X-ray diffraction, in-situ and ex-situ selected area electron diffraction measurements and differential scanning calorimetry data from literature it is evident that the resistivity changes at 552 ± 4 and 585 ± 13 °C indicate the phase transitions from amorphous to a hexagonal disordered solid solution structure and from the latter to MAX phase, respectively. We have shown that phase changes in Cr₂AlC thin films can be revealed by in-situ measurements of thermally induced resistivity changes.

Electrochromic WO3 thin films attain unprecedented durability by potentiostatic pretreatment

Electrochromic windows and glass facades are able to impart energy efficiency jointly with indoor comfort and convenience. Long-term durability is essential for practical implementation of this technology and has recently attracted broad interest. Here we show that a simple potentiostatic pretreatment of sputter-deposited thin films of amorphous WO₃-the most widely studied electrochromic material-can yield unprecedented durability for charge exchange and optical modulation under harsh electrochemical cycling in a Li-ion-conducting electrolyte and effectively evades harmful trapping of Li. The pretreatment consisted of applying a voltage of 6.0 V vs. Li/Li⁺ for several hours to a film backed by a transparent conducting In₂O₃:Sn layer. Associated compositional and structural modifications were probed by several techniques, and improved durability was associated with elemental intermixing at the WO₃/ITO and ITO/glass boundaries as well as with carbonaceous solid-electrolyte interfacial layers on the WO₃ films. Our work provides important new insights into long-term durability of ion-exchange-based devices.

On the Z1-dependence of electronic stopping in TiN

We present a thorough experimental study of electronic stopping of H, He, B, N, Ne and Al ions in TiN with the aim to learn about the energy loss mechanisms of slow ions. The energy loss was measured by means of time-of-flight medium-energy ion scattering. Thin films of TiN on silicon with a δ-layer of W at the TiN/Si interface were used as targets. We compare our results to non-linear density functional theory calculations, examining electron-hole pair excitations by screened ions in a free electron gas in the static limit, with a density equivalent to the expected value for TiN. These calculations predict oscillations in the electronic stopping power for increasing atomic number Z1 of the projectile. An increasing discrepancy between our experimental results and predictions by theory for increasing Z1 was observed. This observation can be attributed to contributions from energy loss channels different from electron-hole pair excitation in binary Coulomb collisions.

Electrochemical Rejuvenation of Anodically Coloring Electrochromic Nickel Oxide Thin Films

Nickel oxide thin films are of major importance as anodically coloring components in electrochromic smart windows with applications in energy-efficient buildings. However, the optical performance of these films degrades upon extended electrochemical cycling, which has hampered their implementation. Here, we use a potentiostatic treatment to rejuvenate degraded nickel oxide thin films immersed in electrolytes of LiClO₄ in propylene carbonate. Time-of-flight elastic recoil detection analysis provided unambiguous evidence that both Li⁺ ions and chlorine-based ions participate in the rejuvenation process. Our work provides new perspectives for developing ion-exchange-based devices embodying nickel oxide.

Electronic Stopping of Slow Protons in Oxides: Scaling Properties

Electronic stopping of slow protons in ZnO, VO_{2} (metal and semiconductor phases), HfO_{2}, and Ta_{2}O_{5} was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al_{2}O_{3} and SiO_{2} reveals, electronic stopping of slow protons does not correlate with electronic properties of the specific material such as band gap energies. Instead, the oxygen 2p states are decisive, as corroborated by density functional theory calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.

Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2

The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO₂-film is investigated. SiNPs were formed by implantation of 70 keV Si⁺ and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 10¹¹-10¹⁴ cm^-2 were employed for irradiation of the implanted samples prior to the thermal annealing. Induced changes in defect and SiNP PL were characterized and correlated with the specific energy loss of the employed SHIs. We find that SHI irradiation, performed before the thermal annealing process, affects both defect and SiNP PL. The change of defect and SiNP PL due to SHI irradiation is found to show a threshold-like behaviour with respect to the electronic stopping power, where a decrease in defect PL and an anticorrelated increase in SiNP PL after the subsequent thermal annealing are observed for electronic stopping exceeding 3-5 keV nm^-1. PL intensities are also compared as a function of total energy deposition and nuclear energy loss. The observed effects can be explained by ion track formation as well as a different type of annealing mechanisms active for SHI irradiation compared to the thermal annealing.

Uniform distribution of post-synthetic linker exchange in metal-organic frameworks revealed by Rutherford backscattering spectrometry

Rutherford backscattering spectrometry (RBS) has been used for the first time to study post-synthetic linker exchange (PSE) in metal-organic frameworks. RBS is a non-invasive method to quantify the amount of introduced linker, as well as providing a means for depth profiling in order to identify the preferred localization of the introduced linker. The exchange of benzenedicarboxylate (bdc) by similarly sized 2-iodobenzenedicarboxylate (I-bdc) proceeds considerably slower than migration of I-dbc through the UiO-66 crystal. Consequently, the I-bdc is found evenly distributed throughout the UiO-66 samples, even at very short PSE exposure times.

Electronic Stopping of Slow Protons in Transition and Rare Earth Metals: Breakdown of the Free Electron Gas Concept

The electronic stopping cross sections (SCS) of Ta and Gd for slow protons have been investigated experimentally. The data are compared to the results for Pt and Au to learn how electronic stopping in transition and rare earth metals correlates with features of the electronic band structures. The extraordinarily high SCS observed for protons in Ta and Gd cannot be understood in terms of a free electron gas model, but are related to the high densities of both occupied and unoccupied electronic states in these metals.

Elastic properties of amorphous T 0.75Y0.75B14 (T = Sc, Ti, V, Y, Zr, Nb) and the effect of O incorporation on bonding, density and elasticity (T' = Ti, Zr)

We have systematically studied the effect of transition metal valence electron concentration (VEC) of amorphous T _0.75Y_0.75B₁₄ (a-T _0.75Y_0.75B₁₄, T  =  Sc, Ti, V, Y, Zr, Nb) on the elastic properties, bonding, density and electronic structure using ab initio molecular dynamics. As the transition metal VEC is increased in both periods, the bulk modulus increases linearly with molar- and mass density. This trend can be understood by a concomitant decrease in cohesive energy. T'  =  Ti and Zr were selected to validate the predicted data experimentally. A-Ti_0.74Y_0.80B₁₄ and a-Zr_0.75Y_0.75B₁₄ thin films were synthesized by high power pulsed magnetron sputtering. Chemical composition analysis revealed the presence of up to 5 at.% impurities, with O being the largest fraction. The measured Young's modulus values for a-Ti_0.74Y_0.80B₁₄ (301  ±  8 GPa) and a-Zr_0.75Y_0.75B₁₄ (306  ±  9 GPa) are more than 20% smaller than the predicted ones. The influence of O incorporation on the elastic properties for these selected systems was theoretically studied, exemplarily in a-Ti_0.75Y_0.75B_12.75O_1.25. Based on ab initio data, we suggest that a-Ti_0.75Y_0.75B₁₄ exhibits a very dense B network, which is partly severed in a-Ti_0.75Y_0.75B_12.75O_1.25. Upon O incorporation, the average coordination number of B and the molar density decrease by 9% and 8%, respectively. Based on these data the more than 20% reduced Young's modulus obtained experimentally for films containing impurities compared to the calculated Young's modulus for a-Ti_0.75Y_0.75B₁₄ (without incorporated oxygen) can be rationalized. The presence of oxygen impurities disrupts the strong B network causing a concomitant decrease in molar density and Young's modulus. Very good agreement between the measured and calculated Young's modulus values is obtained if the presence of impurities is considered in the calculations. The implications of these findings are that prediction efforts regarding the elastic properties of amorphous borides containing oxygen impurities on the at.% level are flawed without taking the presence of impurities into account.

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm^-1 and Seebeck coefficient from 100 to 60 μV K^-1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m^-1 K^-1 gives rise to a thermoelectric Figure of merit ZT ∼ 10^-4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

Ferroelectric phase transition in multiferroic Ge1-x Mn x Te driven by local lattice distortions

The evolution of local ferroelectric lattice distortions in multiferroic Ge_1-x Mn _x Te is studied by x-ray diffraction, x-ray absorption spectroscopy and density functional theory. We show that the anion/cation displacements smoothly decrease with increasing Mn content, thereby reducing the ferroelectric transition from 700 to 100 K at x = 0.5, where the ferromagnetic Curie temperature reaches its maximum. First principles calculations explain this quenching by different local bond contributions of the Mn 3d shell compared to the Ge 4s shell in excellent quantitative agreement with the experiments.

Galvanostatic Ion Detrapping Rejuvenates Oxide Thin Films

Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvanostatic treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li(+) trapping associated with the degradation of the EC properties and, importantly, that Li(+) detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li(+) detrapping.

Vacancy filling effect in thermoelectric NbO

Using density functional theory, we have systematically explored the 1a and 1b vacancy filling in NbO (space group Pm-3m) with Nb and N, respectively, to design compounds with large Seebeck coefficients. The most dominating effect was identified for filling of 1b Wyckoff sites with N giving rise to a fivefold increase in the Seebeck coefficient. This may be understood based on the electronic structure. Nb d-nonmetal p hybridization induces quantum confinement and hence enables the enhancement of the Seebeck coefficient. This was validated by measuring the Seebeck coefficient of reactively sputtered thin films. At 800 °C these electrically conductive oxynitrides exhibit the Seebeck coefficient of -70 µV K(-1), which is the largest absolute value ever reported for these compounds.

Crystal Phase Transitions in the Shell of PbS/CdS Core/Shell Nanocrystals Influences Photoluminescence Intensity

We reveal the existence of two different crystalline phases, i.e., the metastable rock salt and the equilibrium zinc blende phase within the CdS-shell of PbS/CdS core/shell nanocrystals formed by cationic exchange. The chemical composition profile of the core/shell nanocrystals with different dimensions is determined by means of anomalous small-angle X-ray scattering with subnanometer resolution and is compared to X-ray diffraction analysis. We demonstrate that the photoluminescence emission of PbS nanocrystals can be drastically enhanced by the formation of a CdS shell. Especially, the ratio of the two crystalline phases in the shell significantly influences the photoluminescence enhancement. The highest emission was achieved for chemically pure CdS shells below 1 nm thickness with a dominant metastable rock salt phase fraction matching the crystal structure of the PbS core. The metastable phase fraction decreases with increasing shell thickness and increasing exchange times. The photoluminescence intensity depicts a constant decrease with decreasing metastable rock salt phase fraction but shows an abrupt drop for shells above 1.3 nm thickness. We relate this effect to two different transition mechanisms for changing from the metastable rock salt phase to the equilibrium zinc blende phase depending on the shell thickness.

Tuning the localized surface plasmon resonance in Cu(2-x)Se nanocrystals by postsynthetic ligand exchange

Nanoparticles exhibiting localized surface plasmon resonances (LSPR) are valuable tools traditionally used in a wide field of applications including sensing, imaging, biodiagnostics and medical therapy. Plasmonics in semiconductor nanocrystals is of special interest because of the tunability of the carrier densities in semiconductors, and the possibility to couple the plasmonic resonances to quantum confined excitonic transitions. Here, colloidal Cu2-xSe nanocrystals were synthesized, whose composition was shown by Rutherford backscattering analysis and electron dispersive X-ray spectroscopy, to exhibit Cu deficiency. The latter results in p-type doping causing LSPRs, in the present case around a wavelength of 1100 nm, closely matching the indirect band gap of Cu2-xSe. By partial exchange of the organic ligands to specific electron trapping or donating species the LSPR is fine-tuned to exhibit blue or red shifts, in total up to 200 nm. This tuning not only provides a convenient tool for post synthetic adjustments of LSPRs to specific target wavelength but the sensitive dependence of the resonance wavelength on surface charges makes these nanocrystals also interesting for sensing applications, to detect analytes dressed by functional groups.

Quasi-resonant neutralization of He+ ions at a germanium surface

When low-energy He ions are scattered from a Ge surface, the fraction of positive ions exhibits characteristic oscillations as a function of ion energy. These oscillations are caused by quasi-resonant neutralization (qRN), a process which is active for materials with a narrow band nearly resonant with the unperturbed He 1s-level. In this paper we measure the fraction of He+ backscattered from Ge(100). In conjunction with recently developed theoretical methods, we extract quantitative information on the efficiency of qRN. Our evaluation reveals that qRN is a highly efficient process leading to ion fractions two orders of magnitude lower than in systems for which neutralization is only due to Auger processes.

Effects of the atomic level shift in the Auger neutralization rates of noble metal surfaces

In this work we compare characteristics of Auger neutralization of [Formula: see text] ions at noble metal and free-electron metal surfaces. For noble metals, we find that the position of the energy level of He with respect to the Fermi level has a non-negligible influence on the values of the calculated Auger rates through the evaluation of the surface dielectric susceptibility. We conclude that even though our calculated rates are accurate, further theoretical effort is needed to obtain realistic values of the energy level of He in front of these surfaces.

Tuning the magnetic properties of metal oxide nanocrystal heterostructures by cation exchange

For three types of colloidal magnetic nanocrystals, we demonstrate that postsynthetic cation exchange enables tuning of the nanocrystal's magnetic properties and achieving characteristics not obtainable by conventional synthetic routes. While the cation exchange procedure, performed in solution phase approach, was restricted so far to chalcogenide based semiconductor nanocrystals, here ferrite-based nanocrystals were subjected to a Fe(2+) to Co(2+) cation exchange procedure. This allows tracing of the compositional modifications by systematic and detailed magnetic characterization. In homogeneous magnetite nanocrystals and in gold/magnetite core shell nanocrystals the cation exchange increases the coercivity field, the remanence magnetization, as well as the superparamagnetic blocking temperature. For core/shell nanoheterostructures a selective doping of either the shell or predominantly of the core with Co(2+) is demonstrated. By applying the cation exchange to FeO/CoFe(2)O(4) core/shell nanocrystals the Neél temperature of the core material is increased and exchange-bias effects are enhanced so that vertical shifts of the hysteresis loops are obtained which are superior to those in any other system.

New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector

A new beam line for medium energy ion mass scattering (MEIS) has been designed and set up at the Ångström laboratory, Uppsala University, Sweden. This MEIS system is based on a time-of-flight (ToF) concept and the electronics for beam chopping relies on a 4 MHz function generator. Repetition rates can be varied between 1 MHz and 63 kHz and pulse widths below 1 ns are typically obtained by including beam bunching. A 6-axis goniometer is used at the target station. Scattering angle and energy of backscattered ions are extracted from a time-resolved and position-sensitive detector. Examples of the performance are given for three kinds of probing ions, (1)H(+), (4)He(+), and (11)B(+). Depth resolution is in the nanometer range and 1 and 2 nm thick Pt layers can easily be resolved. Mass resolution between nearby isotopes can be obtained as illustrated by Ga isotopes in GaAs. Taking advantage of the large size detector, a direct imaging (blocking pattern) of crystal channels are shown for hexagonal, 4H-SiC. The ToF-MEIS system described in this paper is intended for use in semiconductor and thin film areas. For example, depth profiling in the sub nanometer range for device development of contacts and dielectric interfaces. In addition to applied projects, fundamental studies of stopping cross sections in this medium energy range will also be conducted.

Resonant charge transfer in low-energy ion scattering: Information depth in the reionization regime

Time-Of-Flight Low-energy ion scattering (TOF-LEIS) experiments were performed for He(+) ions scattered from Cu(100) and Cu(0.5)Au(0.5)(100). Probabilities for resonant neutralization and reionization in close collisions were deduced in a wide energy range. To learn about the information depth in LEIS, in a next step ion spectra were analyzed for polycrystalline Cu samples. The relative yield of backscattered projectiles, which have undergone distinct charge exchange processes, was calculated. Results indicate a strong contribution to the ion yield that origins from particles reionized in a close collision in deeper layers when experiments are performed at energies where reionization is prominent. The surface sensitivity of the ion signal at different energies is quantified. Based on these results, the total ion spectrum was quantitatively modelled by two consistent, but different approaches.