Dimensional-crossover-driven metal-insulator transition in SrVO3 ultrathin films

Inferior Interfacial Superconductivity in 1 UC FeSe/SrVO3/SrTiO3 with Screened Interfacial Electron-Phonon Coupling

Single-unit cell (1 UC) FeSe interfaced with TiOx or FeOx exhibits significantly enhanced superconductivity compared to that of bulk FeSe, with interfacial electron-phonon coupling (EPC) playing a crucial role. However, the reduced dimensionality in 1 UC FeSe, which may drive superconducting fluctuations, complicates our understanding of the enhancement mechanisms. We construct a new superconducting interface, 1 UC FeSe/SrVO3/SrTiO3. Here, the itinerant electrons of highly metallic SrVO3 films can screen all high-energy Fuchs-Kliewer phonons, including those of SrTiO3, making it the first FeSe/oxide system with screened interfacial EPC while maintaining the 1 UC FeSe thickness. Despite comparable doping levels, the heavily electron-doped 1 UC FeSe/SrVO3 exhibits a pairing temperature (Tg ∼ 48 K) lower than those of FeSe/SrTiO3 and FeSe/LaFeO3. Our findings disentangle the contributions of interfacial EPC from dimensionality in terms of enhancing Tg in FeSe/oxide interfaces, underscoring the critical importance of interfacial EPC. This FeSe/VOx interface also provides a platform for studying interfacial superconductivity.

Mott-Insulator State of FeSe as a Van der Waals 2D Material Is Unveiled

We undertook a comprehensive investigation of the electronic structure of FeSe, known as a Hund metal, and found that it is not uniquely defined. Through accounting for all two-particle irreducible diagrams constructed from electron Green's function G and screened Coulomb interaction W in a self-consistent manner, a Mott-insulator phase of 2D-FeSe is unveiled. The metal-insulator transition is driven by the strong on-site Coulomb interaction in its paramagnetic phase, accompanied by the weakening of both local and nonlocal screening effects on the Fe-3d orbitals. Our results suggest that Mott physics may play a pivotal role in shaping the electronic, optical, and superconducting properties of monolayer or nanostructured FeSe.

Hidden transport phenomena in an ultraclean correlated metal

Advancements in materials synthesis have been key to unveil the quantum nature of electronic properties in solids by providing experimental reference points for a correct theoretical description. Here, we report hidden transport phenomena emerging in the ultraclean limit of the archetypical correlated electron system SrVO3. The low temperature, low magnetic field transport was found to be dominated by anisotropic scattering, whereas, at high temperature, we find a yet undiscovered phase that exhibits clear deviations from the expected Landau Fermi liquid, which is reminiscent of strange-metal physics in materials on the verge of a Mott transition. Further, the high sample purity enabled accessing the high magnetic field transport regime at low temperature, which revealed an anomalously high Hall coefficient. Taken with the strong anisotropic scattering, this presents a more complex picture of SrVO3 that deviates from a simple Landau Fermi liquid. These hidden transport anomalies observed in the ultraclean limit prompt a theoretical reexamination of this canonical correlated electron system beyond the Landau Fermi liquid paradigm, and more generally serves as an experimental basis to refine theoretical methods to capture such nontrivial experimental consequences emerging in correlated electron systems.

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films

Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing a vanishing quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively.

Surface triggered stabilization of metastable charge-ordered phase in SrTiO3

Charge ordering (CO), characterized by a periodic modulation of electron density and lattice distortion, has been a fundamental topic in condensed matter physics, serving as a potential platform for inducing novel functional properties. The charge-ordered phase is known to occur in a doped system with high d-electron occupancy, rather than low occupancy. Here, we report the realization of the charge-ordered phase in electron-doped (100) SrTiO3 epitaxial thin films that have the lowest d-electron occupancy i.e., d1-d0. Theoretical calculation predicts the presence of a metastable CO state in the bulk state of electron-doped SrTiO3. Atomic scale analysis reveals that (100) surface distortion favors electron-lattice coupling for the charge-ordered state, and triggering the stabilization of the CO phase from a correlated metal state. This stabilization extends up to six unit cells from the top surface to the interior. Our approach offers an insight into the means of stabilizing a new phase of matter, extending CO phase to the lowest electron occupancy and encompassing a wide range of 3d transition metal oxides.

Mechanisms of metal-insulator transitions in ultrathin SrMoO3films

As the thickness of a transition metal oxide thin film is reduced to several unit cells, dimensional and interfacial effects modulate its structure and properties, and initiate low-dimension quantum phase transitions different from its bulk counterparts. To check if a metal-insulator transition (MIT) occurs to a low-dimensional 4d2electron systems, we investigated SrMoO₃thin films by characterizing and analyzing their lattice structures, electric transport properties and electronic states. Among various dimensional effects and interfacial effects, quantum confinement effect (QCE) was discerned as the dominating mechanism of the thickness-driven MIT. Surface/interface scattering contributes to the residual resistivity while the competition of several interactions modulated by QCE governs the temperature dependence of the resistivity of SrMoO₃ultrathin films.

Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO₃ (SVO) sandwich a barrier layer of the band insulator SrTiO₃. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.

Terahertz spectroscopic evidence of electron correlations in SrVO3epitaxial thin films

Electron correlation in transition metal oxides (TMOs) is an intriguing topic in condensed matter physics, revealing a wide variety of exotic physical properties. Investigating low-energy carrier dynamics by terahertz (THz) spectroscopy is an efficient route to obtain the essential insights into electron correlation. In the present study, THz-time-domain spectroscopy is employed to probe electron correlation in SrVO₃epitaxial thin films. The low energy carrier dynamics of SrVO₃in the range of 0.2-6.0 meV shows a typical metallic behavior as overserved in dc transport measurements. The obtained temperature-dependent optical parameters provide evidence of mass renormalization in the low energy regime and carrier momentum relaxation happens via the electron-electron scattering mechanism. Overall, the frequency and temperature-dependent optical parameters indicate the Fermi liquid ground state in a Mott-Hubbard type correlated metal SrVO₃thin film. Our results provide significant insight on low energy carrier dynamics in the correlated electron system, particularly perovskite-basedd¹TMOs.

Electron-Phonon Coupling and Electron-Phonon Scattering in SrVO3

Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow d bands are at the origin of remarkable properties such as the opening of Mott gap, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO3 with V4+  in a 3d1  electronic configuration is the simplest example of a 3D correlated metallic electronic system. Here, the authors' focus on the observation of a (roughly) quadratic temperature dependence of the inverse electron mobility of this seemingly simple system, which is an intriguing property shared by other metallic oxides. The systematic analysis of electronic transport in SrVO3  thin films discloses the limitations of the simplest picture of e-e correlations in a Fermi liquid (FL); instead, it is shown show that the quasi-2D topology of the Fermi surface (FS) and a strong electron-phonon coupling, contributing to dress carriers with a phonon cloud, play a pivotal role on the reported electron spectroscopic, optical, thermodynamic, and transport data. The picture that emerges is not restricted to SrVO3  but can be shared with other 3d and 4d metallic oxides.

Creating Ferromagnetic Insulating La0.9Ba0.1MnO3 Thin Films by Tuning Lateral Coherence Length

In this work, heteroepitaxial vertically aligned nanocomposite (VAN) La_0.9Ba_0.1MnO₃ (LBMO)-CeO₂ films are engineered to produce ferromagnetic insulating (FMI) films. From combined X-ray photoelectron spectroscopy, X-ray diffraction, and electron microscopy, the elimination of the insulator-metal (I-M) transition is shown to result from the creation of very small lateral coherence lengths (with the corresponding lateral size ∼ 3 nm (∼7 u.c.)) in the LBMO matrix, achieved by engineering a high density of CeO₂ nanocolumns in the matrix. The small lateral coherence length leads to a shift in the valence band maximum and reduction of the double exchange (DE) coupling. There is no "dead layer" effect at the smallest achieved lateral coherence length of ∼3 nm. The FMI behavior obtained by lateral dimensional tuning is independent of substrate interactions, thus intrinsic to the film itself and hence not related to film thickness. The unique properties of VAN films give the possibility for multilayer spintronic devices that can be made without interface degradation effects between the layers.

Nevanlinna Analytical Continuation

Simulations of finite temperature quantum systems provide imaginary frequency Green's functions that correspond one to one to experimentally measurable real-frequency spectral functions. However, due to the bad conditioning of the continuation transform from imaginary to real frequencies, established methods tend to either wash out spectral features at high frequencies or produce spectral functions with unphysical negative parts. Here, we show that explicitly respecting the analytic "Nevanlinna" structure of the Green's function leads to intrinsically positive and normalized spectral functions, and we present a continued fraction expansion that yields all possible functions consistent with the analytic structure. Application to synthetic trial data shows that sharp, smooth, and multipeak data is resolved accurately. Application to the band structure of silicon demonstrates that high energy features are resolved precisely. Continuations in a realistic correlated setup reveal additional features that were previously unresolved. By substantially increasing the resolution of real frequency calculations our work overcomes one of the main limitations of finite-temperature quantum simulations.

Strong Ferromagnetism Achieved via Breathing Lattices in Atomically Thin Cobaltites

Low-dimensional quantum materials that remain strongly ferromagnetic down to monolayer thickness are highly desired for spintronic applications. Although oxide materials are important candidates for the next generation of spintronics, ferromagnetism decays severely when the thickness is scaled to the nanometer regime, leading to deterioration of device performance. Here, a methodology is reported for maintaining strong ferromagnetism in insulating LaCoO₃ (LCO) layers down to the thickness of a single unit cell. It is found that the magnetic and electronic states of LCO are linked intimately to the structural parameters of adjacent "breathing lattice" SrCuO₂ (SCO). As the dimensionality of SCO is reduced, the lattice constant elongates over 10% along the growth direction, leading to a significant distortion of the CoO₆ octahedra, and promoting a higher spin state and long-range spin ordering. For atomically thin LCO layers, surprisingly large magnetic moment (0.5 μ_B /Co) and Curie temperature (75 K), values larger than previously reported for any monolayer oxides are observed. The results demonstrate a strategy for creating ultrathin ferromagnetic oxides by exploiting atomic heterointerface engineering, confinement-driven structural transformation, and spin-lattice entanglement in strongly correlated materials.

The effect of oblique-angle sputtering on large area deposition: a unidirectional ultrathin Au plasmonic film growth design

Growing ultrathin nanogranular (NG) metallic films with continuously varying thickness is of great interest for studying regions of criticality and scaling behaviors in the vicinity of quantum phase transitions. In the present work, an ultrathin gold plasmonic NG film was grown on a sapphire substrate by RF magnetron sputtering with an intentional deposition gradient to create a linearly variable thickness ranging from 5 to 13 nm. The aim is to accurately study the electronic phase transition from the quantum tunneling regime to the metallic conduction one. The film structural characterization was performed by means of high-resolution transmission electron microscopy, atomic force microscopy, as well as x-ray diffraction and reflectivity techniques, which indicate the Volmer-Weber film growth mode. The optical and electrical measurements show a transition from dielectric-isolated gold NPs towards a continuous metallic network when t becomes larger than a critical value of t_M = 7.8 nm. Our results show that the onset of the percolation region occurs when a localized surface plasma resonance transforms to display a Drude component, indicative of free charge carriers. We demonstrate that, by using a continuously varying thickness, criteria for metallicity can be unambiguously identified. The onset of metallicity is clearly distinguished by the Drude damping factor and by discontinuities in the plasma frequencies as functions of thickness.

Interface Engineered Room-Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

FORTE - a multipurpose high-vacuum diffractometer for tender X-ray diffraction and spectroscopy at the SIRIUS beamline of Synchrotron SOLEIL

A new high-vacuum multipurpose diffractometer (called FORTE from the French acronyms of the project) has recently been installed at the tender/hard X-ray SIRIUS beamline of Synchrotron SOLEIL, France. The geometry chosen allows one to work either in the classical Eulerian four-circle geometry for bulk X-ray diffraction (XRD) or in the z-axis geometry for surface XRD. The diffractometer nicely fits the characteristics of the SIRIUS beamline, optimized to work in the 1.1-4.5 keV range, and allows one to perform unprecedented diffraction anomalous fine structure (DAFS) experiments in the tender X-ray region, also around non-specular reflections, covering a large reciprocal-space volume. Installation of an X-ray fluorescence detector on a dedicated flange allows simultaneous DAFS and X-ray absorption (XAS) measurements. The access to the tender X-ray region paves the way to resonant investigations around the L-edges of second-row transition elements which are constituents of functional oxide materials. It also enables access to several edges of interest for semiconductors. Finally, the control architecture based on synchronized Delta Tau units opens up exciting perspectives for improvement of the mechanical sphere of confusion.

Interface electron transfer and thickness dependent transport characteristics of La0.7Sr0.3VO3 thin films

La_0.7Sr_0.3VO₃ (LSVO) thin films, 5-30 unit cells (u.c.) in thickness, have been epitaxially deposited on (0 0 1) SrTiO₃ (STO) single crystal substrates. Although LSVO is metallic in bulk, insulating behavior is observed, from 2 to 390 K, in LSVO films less than 9 u.c. in thickness, while thicker films show a metal-insulator transition with the critical temperature increasing with the decrease of film thickness. X-ray absorption spectra reveal a charge transfer across the LSVO/STO interface for a continuous increase of V valence in LSVO, as well as a decrease of Ti valence in interfacial STO, with the LSVO film thickness increases. The transport characteristics are discussed in terms of enhanced electron localization due to the reduction of film thickness and V 3d band filling induced by the charge transfer.

Flexible Metal-Insulator Transitions Based on van der Waals Oxide Heterostructures

Recently, flexible and wearable electronics are highly desirable because of their great potential in the next-generation information devices. In this work, we demonstrate the realization of the metal-insulator transition (MIT) effect in flexible rare-earth nickelate heterostructures. The NdNiO₃ thin films are grown on lattice-mismatched mica substrates along the pseudocubic (111) direction via the van der Waals heteroepitaxy, in which the MIT behaviors are induced and modulated by carefully controlling the lattice strain and the ionic valence state with SrTiO₃ and LaAlO₃ buffering layers. Enhanced MIT properties with sharp transition and significant resistivity change between the metallic and the insulating states are achieved in the NdNiO₃/LaAlO₃/SrTiO₃/mica heterostructures with appropriate in-plane tensile strain and suppressed concentration of Ni²⁺ ions. In addition, the proposed NdNiO₃-based heterostructures exhibit excellent flexibility with reliable MIT characteristics not only in statically concave/convex bending but also in dynamically bending cycling up to 1000 times. The present work provides a platform to design and fabricate new flexible devices integrated with the MIT effect.

Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures

Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlated oxide materials as a comparison that also has some implications for understanding the origin of MIT.

Charge self-consistent many-body corrections using optimized projected localized orbitals

In order for methods combining ab initio density-functional theory and many-body techniques to become routinely used, a flexible, fast, and easy-to-use implementation is crucial. We present an implementation of a general charge self-consistent scheme based on projected localized orbitals in the projector augmented wave framework in the Vienna Ab Initio Simulation Package. We give a detailed description on how the projectors are optimally chosen and how the total energy is calculated. We benchmark our implementation in combination with dynamical mean-field theory: first we study the charge-transfer insulator NiO using a Hartree-Fock approach to solve the many-body Hamiltonian. We address the advantages of the optimized against non-optimized projectors and furthermore find that charge self-consistency decreases the dependence of the spectral function-especially the gap-on the double counting. Second, using continuous-time quantum Monte Carlo we study a monolayer of SrVO₃, where strong orbital polarization occurs due to the reduced dimensionality. Using total-energy calculation for structure determination, we find that electronic correlations have a non-negligible influence on the position of the apical oxygens, and therefore on the thickness of the single SrVO₃ layer.

Strongly correlated oxides for energy harvesting

We review recent advances in strongly correlated oxides as thermoelectric materials in pursuit of energy harvesting. We discuss two topics: one is the enhancement of the ordinary thermoelectric properties by controlling orbital degrees of freedom and orbital fluctuation not only in bulk but also at the interface of correlated oxides. The other topic is the use of new phenomena driven by spin-orbit coupling (SOC) of materials. In 5d electron oxides, we show some SOC-related transport phenomena, which potentially contribute to energy harvesting. We outline the current status and a future perspective of oxides as thermoelectric materials.

Non-Fermi liquids in oxide heterostructures

Understanding the anomalous transport properties of strongly correlated materials is one of the most formidable challenges in condensed matter physics. For example, one encounters metal-insulator transitions, deviations from Landau Fermi liquid behavior, longitudinal and Hall scattering rate separation, a pseudogap phase, and bad metal behavior. These properties have been studied extensively in bulk materials, such as the unconventional superconductors and heavy fermion systems. Oxide heterostructures have recently emerged as new platforms to probe, control, and understand strong correlation phenomena. This article focuses on unconventional transport phenomena in oxide thin film systems. We use specific systems as examples, namely charge carriers in SrTiO₃ layers and interfaces with SrTiO₃, and strained rare earth nickelate thin films. While doped SrTiO₃ layers appear to be a well behaved, though complex, electron gas or Fermi liquid, the rare earth nickelates are a highly correlated electron system that may be classified as a non-Fermi liquid. We discuss insights into the underlying physics that can be gained from studying the emergence of non-Fermi liquid behavior as a function of the heterostructure parameters. We also discuss the role of lattice symmetry and disorder in phenomena such as metal-insulator transitions in strongly correlated heterostructures.

Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator

The Mott transistor is a paradigm for a new class of electronic devices-often referred to by the term Mottronics-which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here, it is demonstrated that thin films of the prototypical Mott insulator LaTiO₃ grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen doping across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and capping layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions. These achievements represent a significant advancement in control and tuning of the electronic properties of LaTiO_3+x thin films making it a promising channel material in future Mottronic devices.

Spin-Orbit Semimetal SrIrO_{3} in the Two-Dimensional Limit

We investigate the thickness-dependent electronic properties of ultrathin SrIrO_{3} and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO_{3} is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO_{3} requires antiferromagnetic order.

Emergence of Quantum Critical Behavior in Metallic Quantum-Well States of Strongly Correlated Oxides

Controlling quantum critical phenomena in strongly correlated electron systems, which emerge in the neighborhood of a quantum phase transition, is a major challenge in modern condensed matter physics. Quantum critical phenomena are generated from the delicate balance between long-range order and its quantum fluctuation. So far, the nature of quantum phase transitions has been investigated by changing a limited number of external parameters such as pressure and magnetic field. We propose a new approach for investigating quantum criticality by changing the strength of quantum fluctuation that is controlled by the dimensional crossover in metallic quantum well (QW) structures of strongly correlated oxides. With reducing layer thickness to the critical thickness of metal-insulator transition, crossover from a Fermi liquid to a non-Fermi liquid has clearly been observed in the metallic QW of SrVO₃ by in situ angle-resolved photoemission spectroscopy. Non-Fermi liquid behavior with the critical exponent α = 1 is found to emerge in the two-dimensional limit of the metallic QW states, indicating that a quantum critical point exists in the neighborhood of the thickness-dependent Mott transition. These results suggest that artificial QW structures provide a unique platform for investigating novel quantum phenomena in strongly correlated oxides in a controllable fashion.

Magnetic ground state of SrRuO3 thin film and applicability of standard first-principles approximations to metallic magnetism

A systematic first-principles study has been performed to understand the magnetism of thin film SrRuO₃ which lots of research efforts have been devoted to but no clear consensus has been reached about its ground state properties. The relative t_2g level difference, lattice distortion as well as the layer thickness play together in determining the spin order. In particular, it is important to understand the difference between two standard approximations, namely LDA and GGA, in describing this metallic magnetism. Landau free energy analysis and the magnetization-energy-ratio plot clearly show the different tendency of favoring the magnetic moment formation, and it is magnified when applied to the thin film limit where the experimental information is severely limited. As a result, LDA gives a qualitatively different prediction from GGA in the experimentally relevant region of strain whereas both approximations give reasonable results for the bulk phase. We discuss the origin of this difference and the applicability of standard methods to the correlated oxide and the metallic magnetic systems.

Charge transfer driven emergent phenomena in oxide heterostructures

Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

Mechanistic insights on the electronic properties and electronic/atomic structure aspects in orthorhombic SrVO3 thin films: XANES–EXAFS study

Distortion in the V–O6 octahedra is observed in SrVO₃ thin films and leads to larder separation between bonding and anti-bonding d_‖ orbitals.

Competition between strain and dimensionality effects on the electronic phase transitions in NdNiO3 films

Transition metal oxides host an array of exotic electronic phases, including superconductivity, ferroelectricity, quantum spin liquid and Mott insulators. Their extreme sensitivity to external stimuli enables various routes to manipulate the ground state, which greatly improves our understanding of the physics involved. Here, we report the competition between strain and dimensionality effects on the phase evolution in high quality NdNiO3 films down to several unit cells. While both compressive and tensile strains increase the Ni 3d band width and favor the metallic phase, reducing dimensionality, on the other hand, decreases the covalent band width and favors the insulating phase in NdNiO3. The experimental observations are well supported by ab initio calculations and improve our understanding of the electronic behavior in strongly correlated electron systems.

Parallel charge sheets of electron liquid and gas in La0.5Sr0.5TiO3/SrTiO3 heterostructures

We show here a new phenomenon in La_0.5Sr_0.5TiO₃/SrTiO₃ (LSTO/STO) heterostructures; that is a coexistence of three-dimensional electron liquid (3DEL) and 2D electron gas (2DEG), separated by an intervening insulating LSTO layer. The two types of carriers were revealed through multi-channel analysis of the evolution of nonlinear Hall effect as a function of film thickness, temperature and back gate voltage. We demonstrate that the 3D electron originates from La doping in LSTO film and the 2D electron at the surface of STO is due to the polar field in the intervening insulating layer. As the film thickness is reduced below a critical thickness of 6 unit cells (uc), an abrupt metal-to-insulator transition (MIT) occurs without an intermediate semiconducting state. The properties of the LSTO layer grown on different substrates suggest that the insulating phase of the intervening layer is a result of interface strain induced by the lattice mismatch between the film and substrate. Further, by fitting the magnetoresistance (MR) curves, the 6 unit cell thick LSTO is shown to exhibit spin-orbital coupling. These observations point to new functionalities, in addition to magnetism and superconductivity in STO-based systems, which could be exploited in a multifunctional context.

Exact Double Counting in Combining the Dynamical Mean Field Theory and the Density Functional Theory

We propose a continuum representation of the dynamical mean field theory, in which we were able to derive an exact overlap between the dynamical mean field theory and band structure methods, such as the density functional theory; double counting. The implementation of this exact double counting shows improved agreement between the theory and experiment in several correlated solids, such as the transition metal oxides and lanthanides. Previously introduced nominal double counting is in much better agreement with the exact double counting than the most widely used fully localized limit formula.

Kondo effect goes anisotropic in vanadate oxide superlattices

We study the transport properties in SrVO3/LaVO3 (SVO/LVO) superlattices deposited on SrTiO3 (STO) substrates. We show that the electronic conduction occurs in the metallic LVO layers with a galvanomagnetism typical of a 2D Fermi surface. In addition, a Kondo-like component appears in both the thermal variation of resistivity and the magnetoresistance. Surprisingly, in this system where the STO interface does not contribute to the measured conduction, the Kondo correction is strongly anisotropic. We show that the growth temperature allows a direct control of this contribution. Finally, the key role of vanadium mixed valency stabilized by oxygen vacancies is enlightened.

Origin of the Anomalous Mass Renormalization in Metallic Quantum Well States of Strongly Correlated Oxide SrVO_{3}

In situ angle-resolved photoemission spectroscopy (ARPES) has been performed on SrVO_{3} ultrathin films, which show metallic quantum well (QW) states, to unveil the origin of the anomalous mass enhancement in the QW subbands. The line-shape analysis of the ARPES spectra reveals that the strength of the electron correlation increases as the subband bottom energy approaches the Fermi level. These results indicate that the anomalous subband-dependent mass enhancement mainly arises from the quasi-one-dimensional character of confined V 3d states as a result of their orbital-selective quantization.

Electronic and magnetic properties of epitaxial perovskite SrCrO₃(0 0 1)

We have investigated the intrinsic properties of SrCrO3 epitaxial thin films synthesized by molecular beam epitaxy. We find compelling evidence that SrCrO3 is a correlated metal. X-ray photoemission valence band and O K-edge x-ray absorption spectra indicate a strongly hybridized Cr3d-O2p state crossing the Fermi level, leading to metallic behavior. Comparison between valence band spectra near the Fermi level and the densities of states calculated using density functional theory (DFT) suggests the presence of coherent and incoherent states and points to strong electron correlation effects. The magnetic susceptibility can be described by Pauli paramagnetism at temperatures above 100 K, but reveals antiferromagnetic behavior at lower temperatures, possibly resulting from orbital ordering.

Strain engineering of perovskite thin films using a single substrate

Combining temperature-dependent x-ray diffraction, Raman spectroscopy and first-principles-based effective Hamiltonian calculations, we show that varying the thickness of (Ba0.8Sr0.2)TiO3 (BST) thin films deposited on the same single substrate (namely, MgO) enables us to change not only the magnitude but also the sign of the misfit strain. Such previously overlooked control of the strain allows several properties of these films (e.g. Curie temperature, symmetry of ferroelectric phases, dielectric response) to be tuned and even optimized. Surprisingly, such desired control of the strain (and of the resulting properties) originates from an effect that is commonly believed to be detrimental to functionalities of films, namely the existence of misfit dislocations. The present study therefore provides a novel route to strain engineering, as well as leading us to revisit common beliefs.

Symmetry-protected surface state on Mo(1 1 2)

We report the experimental identification of a symmetry-protected surface state on Mo(1 1 2). The utilization of photon-energy- and polarization-dependent angle-resolved photoemission spectroscopy clearly demonstrates that this true surface state preserves its two-dimensional character despite the fact that it resides within the projection of the bulk bands along the ̅Γ-̅X line of the surface Brillouin zone. This surface state on Mo(1 1 2) exists due to the forbidden hybridization between the bulk and the surface states, each of which possesses different state symmetries within the crystal. The experimental identification of such a surface state possibly opens up pathways towards controlled manipulation between true surface states and the surface resonances (i.e. between two-dimensional and quasi-two-dimensional states) by breaking the symmetry of the crystal surface.

Engineering correlation effects via artificially designed oxide superlattices

Ab initio calculations are used to predict that a superlattice composed of layers of LaTiO3 and LaNiO3 alternating along the [001] direction is a S=1 Mott insulator with large magnetic moments on the Ni sites, negligible moments on the Ti sites and a charge transfer gap set by the energy difference between Ni d and Ti d states, distinct from conventional Mott insulators. Correlation effects are enhanced on the Ni sites via filling the oxygen p states and reducing the Ni-O-Ni bond angle. Small hole (electron) doping of the superlattice leads to a two-dimensional single-band situation with holes (electrons) residing on the Ni d(x2-y2) (Ti d(xy)) orbital and coupled to antiferromagnetically correlated spins in the NiO2 layer.

Orbital-ordering-induced ferroelectricity in SrCrO3

Using density functional theory calculations, ultrathin films of SrVO3(d1) and SrCrO3(d2) on SrTiO3 substrates have been studied as possible multiferroics. Although both are metallic in the bulk limit, they are found to be insulating as a result of orbital ordering driven by lattice distortions at the ultrathin limit. While the distortions in SrVO3 have a first-order Jahn-Teller origin, those in SrCrO3 are ferroelectric in nature. This route to ferroelectricity results in polarizations comparable with conventional ferroelectrics.

Highly Conductive SrVO3 as a bottom electrode for functional perovskite oxides

Stoichiometric SrVO3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO3 , as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO3 a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices.

Metal-insulator transition and orbital reconstruction in Mott-type quantum wells made of NdNiO3

The metal-insulator transition and the underlying electronic and orbital structure in e(g)(1) quantum wells based on NdNiO3 were investigated by dc transport and resonant soft x-ray absorption spectroscopy. By comparing quantum wells of the same dimension but with two different confinement structures, we explicitly demonstrate that the quantum well boundary condition of correlated electrons is critical to selecting the many-body ground state. In particular, the long-range orderings and the metal-insulator transition are found to be strongly enhanced under quantum confinement by sandwiching NdNiO(3) with the wide-gap dielectric LaAlO(3), while they are suppressed when one of the interfaces is replaced by a surface (interface with vacuum). Resonant spectroscopy reveals that the reduced charge fluctuations in the sandwich structure are supported by the enhanced propensity to charge ordering due to the suppressed e(g) orbital splitting when interfaced with the confining LaAlO3 layer.