Dynamical response and confinement of the electrons at the LaAlO3/SrTiO3 interface

Thermal and electrostatic tuning of surface phonon-polaritons in LaAlO3/SrTiO3 heterostructures

Phonon polaritons are promising for infrared applications due to a strong light-matter coupling and subwavelength energy confinement they offer. Yet, the spectral narrowness of the phonon bands and difficulty to tune the phonon polariton properties hinder further progress in this field. SrTiO3 - a prototype perovskite oxide - has recently attracted attention due to two prominent far-infrared phonon polaritons bands, albeit without any tuning reported so far. Here we show, using cryogenic infrared near-field microscopy, that long-propagating surface phonon polaritons are present both in bare SrTiO3 and in LaAlO3/SrTiO3 heterostructures hosting a two-dimensional electron gas. The presence of the two-dimensional electron gas increases dramatically the thermal variation of the upper limit of the surface phonon polariton band due to temperature dependent polaronic screening of the surface charge carriers. Furthermore, we demonstrate a tunability of the upper surface phonon polariton frequency in LaAlO3/SrTiO3 via electrostatic gating. Our results suggest that oxide interfaces are a new platform bridging unconventional electronics and long-wavelength nanophotonics.

Low-Temperature Stability and Sensing Performance of Mid-Infrared Bloch Surface Waves on a One-Dimensional Photonic Crystal

The growing need for new and reliable surface sensing methods is arousing interest in the electromagnetic excitations of ultrathin films, i.e., to generate electromagnetic field distributions that resonantly interact with the most significant quasi-particles of condensed matter. In such a context, Bloch surface waves turned out to be a valid alternative to surface plasmon polaritons to implement high-sensitivity sensors in the visible spectral range. Only in the last few years, however, has their use been extended to infrared wavelengths, which represent a powerful tool for detecting and recognizing molecular species and crystalline structures. In this work, we demonstrate, by means of high-resolution reflectivity measurements, that a one-dimensional photonic crystal can sustain Bloch surface waves in the infrared spectral range from room temperature down to 10 K. To the best of our knowledge, this is the first demonstration of infrared Bloch surface waves at cryogenic temperatures. Furthermore, by exploiting the enhancement of the surface state and the high brilliance of infrared synchrotron radiation, we demonstrate that the proposed BSW-based sensor has a sensitivity on the order of 2.9 cm^-1 for each nanometer-thick ice layer grown on its surface below 150 K. In conclusion, we believe that Bloch surface wave-based sensors are a valid new class of surface mode-based sensors for applications in materials science.

Modified transverse Ising model for the dielectric properties of SrTiO3 films and interfaces

The transverse Ising model (TIM), with pseudospins representing the lattice polarization, is often used as a simple description of ferroelectric materials. However, we demonstrate that the TIM, as it is usually formulated, provides an incorrect description of SrTiO₃ films and interfaces because of its inadequate treatment of spatial inhomogeneity. We correct this deficiency by adding a pseudospin anisotropy to the model. We demonstrate the physical need for this term by comparison of the TIM to a typical Landau-Ginzburg-Devonshire model. We then demonstrate the physical consequences of the modification for two model systems: a ferroelectric thin film, and a metallic LaAlO₃/SrTiO₃ interface. We show that, in both cases, the modified TIM has a substantially different polarization profile than the conventional TIM. In particular, at low temperatures the formation of quantized states at LaAlO₃/SrTiO₃ interfaces only occurs in the modified TIM.

Grazing-angle reflectivity setup for the low-temperature infrared spectroscopy of two-dimensional systems

A new optical setup is described that allows the reflectivity at grazing incidence to be measured, including ultrathin films and two-dimensional electron systems (2DES) down to liquid-helium temperatures, by exploiting the Berreman effect and the high brilliance of infrared synchrotron radiation. This apparatus is well adapted to detect the absorption of a 2DES of nanometric thickness, namely that which forms spontaneously at the interface between a thin film of LaAlO₃ and its SrTiO₃ substrate, and to determine its Drude parameters.

High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces

Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO₃/SrTiO₃ interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modeling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon-phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope.

Infrared Spectroscopy of the Topological Surface States of Bi_{2}Se_{3} by Use of the Berreman Effect

The Berreman effect (BE) allows one to study the electrodynamics of ultrathin conducting films at the surface of dielectrics by use of grazing-angle infrared spectroscopy and polarized radiation. Here, we first apply the BE to the two-dimensional electron system (2DES) at the interface between a high-purity film of the topological insulator Bi_{2}Se_{3} and its sapphire substrate. We determine for the 2DES a charge density n_{s}=(8±1)×10^{12}  cm^{-2}, a thickness d=0.6±0.2  nm, and a mobility μ^{IR}=290±30  cm^{2}/V s. Within errors, all of these parameters result in being independent of temperature between 300 and 10 K. These findings consistently indicate that the 2DES is formed by topological surface states, whose infrared response is then directly observed here.

Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces

Polar discontinuities occurring at interfaces between two materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such structures, a reconfiguration of the charge landscape sets in at the interface via chemical modifications, adsorbates, or charge transfer. In the latter case, one may expect a local electronic doping of one material: one example is the two-dimensional electron liquid (2DEL) appearing in SrTiO3 once covered by a polar LaAlO3 layer. Here, it is shown that tuning the formal polarization of a (La,Al)1-x (Sr,Ti) x O3 (LASTO:x) overlayer modifies the quantum confinement of the 2DEL in SrTiO3 and its electronic band structure. The analysis of the behavior in magnetic field of superconducting field-effect devices reveals, in agreement with ab initio calculations and self-consistent Poisson-Schrödinger modeling, that quantum confinement and energy splitting between electronic bands of different symmetries strongly depend on the interface total charge densities. These results strongly support the polar discontinuity mechanisms with a full charge transfer to explain the origin of the 2DEL at the celebrated LaAlO3/SrTiO3 interface and demonstrate an effective tool for tailoring the electronic structure at oxide interfaces.

Physics of SrTiO3-based heterostructures and nanostructures: a review

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Tuning Up or Down the Critical Thickness in LaAlO3 /SrTiO3 through In Situ Deposition of Metal Overlayers

The quasi 2D electron system (q2DES) that forms at the interface between LaAlO₃ and SrTiO₃ has attracted much attention from the oxide electronics community. One of its hallmark features is the existence of a critical LaAlO₃ thickness of 4 unit-cells (uc) for interfacial conductivity to emerge. In this paper, the chemical, electronic, and transport properties of LaAlO₃ /SrTiO₃ samples capped with different metals grown in a system combining pulsed laser deposition, sputtering, and in situ X-ray photoemission spectroscopy are investigated. The results show that for metals with low work function a q2DES forms at 1-2 uc of LaAlO₃ and is accompanied by a partial oxidation of the metal, a phenomenon that affects the q2DES properties and triggers the formation of defects. In contrast, for noble metals, the critical thickness is increased above 4 uc. The results are discussed in terms of a hybrid mechanism that incorporates electrostatic and chemical effects.

Creating Two-Dimensional Electron Gas in Polar/Polar Perovskite Oxide Heterostructures: First-Principles Characterization of LaAlO3/A(+)B(5+)O3

By using first-principles electronic structure calculations, we explored the possibility of producing two-dimensional electron gas (2DEG) at the polar/polar (LaO)(+)/(BO2)(+) interface in the LaAlO3/A(+)B(5+)O3 (A = Na and K, B = Nb and Ta) heterostructures (HS). Unlike the prototype polar/nonpolar LaAlO3/SrTiO3 HS system where there exists a least film thickness of four LaAlO3 unit cells to have an insulator-to-metal transition, we found that the polar/polar LaAlO3/A(+)B(5+)O3 HS systems are intrinsically conducting at their interfaces without an insulator-to-metal transition. The interfacial charge carrier densities of these polar/polar HS systems are on the order of 10(14) cm(-2), much larger than that of the LaAlO3/SrTiO3 system. This is mainly attributed to two donor layers, i.e., (LaO)(+) and (BO2)(+) (B = Nb and Ta), in the polar/polar LaAlO3/A(+)B(5+)O3 systems, while only one (LaO)(+) donor layer in the polar/nonpolar LaAlO3/SrTiO3 system. In addition, it is expected that, due to less localized Nb 4d and Ta 5d orbitals with respect to Ti 3d orbitals, these LaAlO3/A(+)B(5+)O3 HS systems can exhibit potentially higher electron mobility because of their smaller electron effective mass than that in the LaAlO3/SrTiO3 system. Our results demonstrate that the electronic reconstruction at the polar/polar interface could be an alternative way to produce superior 2DEG in the perovskite-oxide-based HS systems.

Polaronic metal state at the LaAlO3/SrTiO3 interface

Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 that hosts a two-dimensional electron system. Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LaAlO3 overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.

Electronic Structure of Oxide Interfaces: A Comparative Analysis of GdTiO3/SrTiO3 and LaAlO3/SrTiO3 Interfaces

Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade. We present ab-initio electronic structure calculations for the interface between a Mott insulator GdTiO₃ (GTO) and a band insulator SrTiO₃ (STO) and compare our results with those for the widely studied LaAlO₃/SrTiO₃ (LAO/STO) interface between two band insulators. Our GTO/STO results are in excellent agreement with experiments, but qualitatively different from LAO/STO. We find an interface carrier density of 0.5 e⁻/Ti, independent of GTO thickness in both superlattice and thin film geometries, in contrast to LAO/STO. The superlattice geometry in LAO/STO offers qualitatively the same result as in GTO/STO. On the other hand, for a thin film geometry, the interface carrier density builds up only beyond a threshold thickness of LAO. The positive charge at the vacuum surface that compensates the 2DEG at the interface also exhibits distinct behaviors in the two systems. The compensating positive charge at the exposed surface of GTO charge disproportionates due to correlation effect making the surface insulating as opposed to that in LAO which remains metallic within band theory and presumably becomes insulating due to surface disorder or surface reconstruction.

Electron confinement at the LaAlO3/SrTiO3 interface

Physical and structural phenomena originating from polar discontinuities have generated enormous activity. In the last ten years, the oxide interface between polar LaAlO(3) and non-polar SrTiO(3), both band insulators, has attracted particular interest, as it hosts an electron liquid with remarkable properties: it superconducts, has a sizeable spin-orbit interaction and its properties are tunable by an electric field. The profile of the carrier density at the interface and the exact band structure are properties strongly linked and still objects of debate. Here we review the experimental findings on the origin and the extension of the electron liquid and discuss the theoretical models developed to describe the charge profile and the band structure. We also introduce a model to account for the effect of interface disorder which could modify the charge distribution.

Self-consistent iteration procedure in analyzing reflectivity and spectroscopic ellipsometry data of multilayered materials and their interfaces

For multilayered materials, reflectivity depends on the complex dielectric function of all the constituent layers, and a detailed analysis is required to separate them. Furthermore, for some cases, new quantum states can occur at the interface which may change the optical properties of the material. In this paper, we discuss various aspects of such analysis, and present a self-consistent iteration procedure, a versatile method to extract and separate the complex dielectric function of each individual layer of a multilayered system. As a case study, we apply this method to LaAlO3/SrTiO3 heterostructure in which we are able to separate the effects of the interface from the LaAlO3 film and the SrTiO3 substrate. Our method can be applied to other complex multilayered systems with various numbers of layers.

Electric-field-induced polar order and localization of the confined electrons in LaAlO3/SrTiO3 heterostructures

With ellipsometry, x-ray diffraction, and resistance measurements we investigated the electric-field effect on the confined electrons at the LaAlO3/SrTiO3 interface. We obtained evidence that the localization of the electrons at negative gate voltage is induced, or at least enhanced, by a polar phase transition in SrTiO3 which strongly reduces the lattice polarizability and the subsequent screening. In particular, we show that the charge localization and the polar order of SrTiO3 both develop below ∼50  K and exhibit similar, unipolar hysteresis loops as a function of the gate voltage.

Synchrotron radiation-based far-infrared spectroscopic ellipsometer with full Mueller-matrix capability

We developed far-IR spectroscopic ellipsometer at the U4IR beamline of the National Synchrotron Light Source in Brookhaven National Laboratory. This ellipsometer is able to measure both, rotating analyzer and full-Mueller matrix spectra using rotating retarders, and wire-grid linear polarizers. We utilize exceptional brightness of synchrotron radiation in the broad spectral range between about 20 and 4000 cm(-1). Fourier-transform infrared (FT-IR) spectrometer is used for multi-wavelength data acquisition. The sample stage has temperature variation between 4.2 and 450 K, wide range of θ-2θ angular rotation, χ tilt angle adjustment, and X-Y-Z translation. A LabVIEW-based software controls the motors, sample temperature, and FT-IR spectrometer and also allows to run fully automated experiments with pre-programmed measurement schedules. Data analysis is based on Berreman's 4 × 4 propagation matrix formalism to calculate the Mueller matrix parameters of anisotropic samples with magnetic permeability μ ≠ 1. A nonlinear regression of the rotating analyzer ellipsometry and∕or Mueller matrix (MM) spectra, which are usually acquired at variable angles of incidence and sample crystallographic orientations, allows extraction of dielectric constant and magnetic permeability tensors for bulk and thin-film samples. Applications of this ellipsometer setup for multiferroic and ferrimagnetic materials with μ ≠ 1 are illustrated with experimental results and simulations for TbMnO3 and Dy3Fe5O12 single crystals. We demonstrate how magnetic and electric dipoles, such as magnons and phonons, can be distinguished from a single MM measurement without adducing any modeling arguments. The parameters of magnetoelectric components of electromagnon excitations are determined using MM spectra of TbMnO3.

Two-dimensional superconducting phase in LaTiO3/SrTiO3 heterostructures induced by high-mobility carrier doping

In this Letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers: a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electron spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by the field effect.

Structural comparison of n-type and p-type LaAlO3/SrTiO3 interfaces

Using a surface x-ray diffraction technique, we investigated the atomic structure of two types of interfaces between LaAlO3 and SrTiO3, that is, p-type (SrO/AlO2) and n-type (TiO2/LaO) interfaces. Our results demonstrate that the SrTiO3 in the sample with the n-type interface has a large polarized region, while that with the p-type interface has a limited polarized region. In addition, atomic intermixing was observed to extend deeper into the SrTiO3 substrate at the n-type interface compared to the p type. These differences result in distinct degrees of band bending, which likely contributes to the striking contrast in electrical conductivity between the two types of interfaces.

Spontaneous 2-dimensional carrier confinement at the n-type SrTiO3/LaAlO3 interface

We describe the intrinsic mechanism of 2-dimensional electron confinement at the n-type SrTiO3/LaAlO3 interface as a function of the sheet carrier density n(s) via advanced first-principles calculations. Electrons localize spontaneously in Ti 3d(xy) levels within a thin (≲2  nm) interface-adjacent SrTiO3 region for n(s) lower than a threshold value n(c)∼10(14)  cm(-2). For n(s)>n(c) a portion of charge flows into Ti 3d(xz)-d(yz) levels extending farther from the interface. This intrinsic confinement can be attributed to the interface-induced symmetry breaking and localized nature of Ti 3d t(2g) states. The sheet carrier density directly controls the binding energy and the spatial extension of the conductive region. A direct, quantitative relation of these quantities with n(s) is provided.

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces

We report on a study of magnetotransport in LaAlO3 /SrTiO3 interfaces characterized by mobilities of the order of several thousands cm2/V s. We observe Shubnikov-de Haas oscillations whose period depends only on the perpendicular component of the magnetic field. This observation directly indicates the formation of a two-dimensional electron gas originating from quantum confinement at the interface. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass m* ≃ 1.45 m(e). An electric field applied in the back-gate geometry increases the mobility, the carrier density, and the oscillation frequency.

Shubnikov-de Haas oscillations in SrTiO3/LaAlO3 interface

Quantum magnetic oscillations in SrTiO3/LaAlO3 interface are observed in the magnetoresistance. We study their frequency as a function of gate voltage and the evolution of their amplitude with temperature. The data are consistent with the Shubnikov-de Haas theory. The Hall resistivity ρ(xy) is nonlinear at low magnetic fields. ρ(xy) is fitted assuming multiple carrier contributions. We infer the density of the mobile charge carriers from the oscillations frequency and from Hall measurements. The comparison between these densities suggests multiple valley and spin degeneracy. The small amplitude of the oscillation is discussed in the framework of the multiple band scenario.