Transient fluorescence of the off state in blinking CdSe/CdS/ZnS semiconductor nanocrystals is not governed by Auger recombination

Biexciton Blinking in CdSe-Based Quantum Dots

Experiments on single colloidal quantum dots (QDs) have revealed temporal fluctuations in the emission efficiency of the single-exciton state. These fluctuations, often termed "blinking", are caused by opening/closing of charge-carrier traps and/or charging/discharging of the QD. In the regime of strong optical excitation, multiexciton states are formed. The emission efficiencies of multiexcitons are lower because of Auger processes, but a quantitative characterization is challenging. Here, we quantify fluctuations of the biexciton efficiency for single CdSe/CdS/ZnS core-shell QDs. We find that the biexciton efficiency "blinks" significantly. The additional electron due to charging of a QD accelerates Auger recombination by a factor of 2 compared to the neutral biexciton, while opening/closing of a charge-carrier trap leads to an increase of the nonradiative recombination rate by a factor of 4. To understand the fast rate of trap-assisted recombination, we propose a revised model for trap-assisted recombination based on reversible trapping. Finally, we discuss the implications of biexciton blinking for lasing applications.

Moisture-Dependent Blinking of Individual CsPbBr3 Nanocrystals Revealed by Single-Particle Spectroscopy

All-inorganic metal halide perovskite nanocrystals (NCs) have been exceptional candidates for high-performance solution-processed optoelectronic and photonic devices compared with organometal halide perovskite NCs due to their superior stability. However, the interactions between all-inorganic perovskite NCs and moisture, which is an acknowledged detrimental factor, are still under debate, and detailed investigations to uncover such fundamentals remain to be performed. Herein, with wide-field fluorescence microscopy, the burst photoluminescence blinking responses of CsPbBr₃ NCs were observed in ambient air, and moisture rather than oxygen was verified to be the key factor that leads to the enhanced PL intensity and reduced OFF duration. This behavior is rationalized through an effective passivation effect of the adsorbed water molecules on the surface halide vacancies on CsPbBr₃ NCs. This work validates that ∼40% humidity atmospheres are helpful for better utilizing the all-inorganic perovskites, which is evidence of their promising prospect for application.

A High-Quality CdSe/CdS/ZnS Quantum-Dot-Based FRET Aptasensor for the Simultaneous Detection of Two Different Alzheimer's Disease Core Biomarkers

The simultaneous detection of two different biomarkers for the point-of-care diagnosis of major diseases, such as Alzheimer’s disease (AD), is greatly challenging. Due to the outstanding photoluminescence (PL) properties of quantum dots (QDs), a high-quality CdSe/CdS/ZnS QD-based fluorescence resonance energy transfer (FRET) aptasensor for simultaneously monitoring the amyloid-β oligomers (AβO) and tau protein was proposed. By engineering the interior inorganic structure and inorganic−organic interface, water-soluble dual-color CdSe/CdS/ZnS QDs with a near-unity PL quantum yield (>90%) and mono-exponential PL decay dynamics were generated. The π−π stacking and hydrogen bond interaction between the aptamer-functionalized dual-color QDs and gold nanorods@polydopamine (Au NRs@PDA) nanoparticles resulted in significant fluorescence quenching of the QDs through FRET. Upon the incorporation of the AβO and tau protein, the fluorescence recovery of the QDs-DNA/Au NRs@PDA assembly was attained, providing the possibility of simultaneously assaying the two types of AD core biomarkers. The lower detection limits of 50 pM for AβO and 20 pM for the tau protein could be ascribed to the distinguishable and robust fluorescence of QDs and broad spectral absorption of Au NRs@PDA. The sensing strategy serves as a viable platform for the simultaneously monitoring of the core biomarkers for AD and other major diseases.

High Photoluminescence Polyindole/CuInS Quantum Dots for Pb Ions Sensor

Polyindole is considered an excellent conducting polymer with interested properties for different applications. A novel polyindole (PIn)/CuInS (CIS)/ZnS quantum dots (QDs) nanocomposite was synthesized via in situ polymerization of PIn in presence of CIS/ZnS QDs. By investigating the effect of CIS/ZnS QDs on optical properties of PIn, it was found that the optical band gaps of PIn, CIS/ZnS QDs, and PIn/CIS/ZnS QDs nanocomposite were 3.24 eV, 4.68 eV and 3.44 eV, respectively. From the luminance spectra, it was observed that emission peaks of PIn at 442 and 468 nm are independent of the excitation wavelength with the highest intensity at excitation wavelength of 380 nm. However, the luminance spectrum of PIn/CIS/ZnS QDs nanocomposite exhibited a quenching peak for CIS/ZnS QDs while the intensity of PIn peak was enhanced. High resolution of transmission electron microscope image of CIS/ZnS QDs revealed nanocrystals with a size of 3–4.5 nm and lattice space of 0.2 nm. PIn/CIS/ZnS QDs nanocomposite as the fluorescent probe was employed for sensing different concentrations of Pb2+ from 5 to 50 ppb. The reaction between PIn/CIS/ZnS QDs and Pb2+ was slightly quenched and fixed after 90 min. The emission peak was reduced gradually with increasing concentration of lead via photo-induced electron transfer or ion exchange mechanism. The value of correlation coefficient (R2) was 0.99, the sensitivity was 0.0041 ppb−1 and limit of detection value was 4.48 ppb.

Nonblinking Colloidal Quantum Dots via Efficient Multiexciton Emission

Nonblinking colloidal quantum dots (QDs) are significant to their applications as single-photon sources or light-emitting materials. Herein, a simple heat-up method was developed to synthesize high-qualityWZ-CdSe/CdS core-shell colloidal QDs, which achieved a near-unity photoluminescence quantum yield (PLQY). It was found that the blinking behavior of such QDs was completely suppressed at high excitation intensities, and ultra-stable PL emission was observed. For this reason, a systematic investigation was conducted, revealing that the complete blinking suppression was attributed mainly to the efficient multiexciton emission at high excitation intensities. Such high-quality QDs with nonblinking behaviors and nearly ideal PL properties at high excitation intensities have massive potential applications in various robust conditions, including QD display screens, single-particle tracks, and single-photon sources.

Memories in the photoluminescence intermittency of single cesium lead bromide nanocrystals

Single cesium lead bromide (CsPbBr₃) nanocrystals show strong photoluminescence intermittency, with on- and off- dwelling times following power-law distributions. We investigate the correlations for successive on-times and successive off-times, and find a memory effect in the photoluminescence intermittency of such inorganic perovskite nanocrystals. This memory effect is not sensitive to the nature of the surface capping ligand and the embedding polymer. These observations suggest that photoluminescence intermittency and its memory are mainly controlled by intrinsic traps in the nanocrystals. Our findings will help optimizing light-emitting devices based on these perovskite nanocrystals.

Mechanistic Investigation of the Defect Activity Contributing to the Photoluminescence Blinking of CsPbBr3 Perovskite Nanocrystals

Exploration of the full potential of the perovskite nanocrystals (NCs) for different applications requires a thorough understanding of the pathways of recombination of the photogenerated charge carriers and associated dynamics. In this work, we have tracked the recombination routes of the charge carriers by probing photoluminescence (PL) intermittency of the immobilized and freely diffusing single CsPbBr₃ NCs employing a time-tagged-time-resolved method. The immobilized single CsPbBr₃ NCs show a complex PL time-trace, a careful analysis of which reveals that nonradiative band-edge recombination through trap states, trion recombination, and trapping of the hot carriers contribute to the blinking behavior of any given NC. A drastically suppressed PL blinking observed for the NCs treated with a tetrafluoroborate salt indicates elimination of most of the undesired recombination processes. A fluorescence correlation spectroscopy (FCS) study on the freely diffusing single NCs shows that enhanced PL and suppressed blinking of the treated particles are the outcome of an increase in per-particle brightness, not due to any increase in the number of particles undergoing "off"-"on" transition in the observation volume. The mechanistic details obtained from this study on the origin of blinking in CsPbBr₃ NCs provide deep insight into the radiative and nonradiative charge carrier recombination pathways in these important materials, and this knowledge is expected to be useful for better design and development of bright photoluminescent samples of this class for optoelectronic applications.

Insights on heterogeneity in blinking mechanisms and non-ergodicity using sub-ensemble statistical analysis of single quantum-dots

Photo-luminescence (P-L) intermittency (or blinking) in semiconductor nanocrystals (NCs), a phenomenon ubiquitous to single-emitters, is generally considered to be temporally random intensity fluctuations between "bright" ("On") and "dark" ("Off") states. However, individual quantum-dots (QDs) rarely exhibit such telegraphic signals, and yet, a vast majority of single-NC blinking data are analyzed using a single fixed threshold which generates binary trajectories. Furthermore, while blinking dynamics can vary dramatically over NCs in the ensemble, the extent of diversity in the exponents (m_On/Off) of single-particle On-/Off-time distributions (P(t_On/Off)), often used to validate mechanistic models of blinking, remains unclear due to a lack of statistically relevant data sets. Here, we subclassify an ensemble of QDs based on the emissivity of each emitter and subsequently compare the (sub)ensembles' behaviors. To achieve this, we analyzed a large number (>1000) of blinking trajectories for a model system, Mn⁺² doped ZnCdS QDs, which exhibits diverse blinking dynamics. An intensity histogram dependent thresholding method allowed us to construct distributions of relevant blinking parameters (such as m_On/Off). Interestingly, we find that single QD P(t_On/Off)s follow either truncated power law or power law, and their relative proportion varies over subpopulations. Our results reveal a remarkable variation in m_On/Off amongst as well as within subensembles, which implies multiple blinking mechanisms being operational amongst various QDs. We further show that the m_On/Off obtained via cumulative single-particle P(t_On/Off) is distinct from the weighted mean value of all single-particle m_On/Off, evidence for the lack of ergodicity. Thus, investigation and analyses of a large number of QDs, albeit for a limited time span of a few decades, are crucial to characterize the spatial heterogeneity in possible blinking mechanisms.

Photostability and long-term preservation of a colloidal semiconductor-based single photon emitter in polymeric photonic structures

Colloidal semiconductor quantum dots (QDs) are promising candidates for various applications in electronics and quantum optics. However, they are sensitive and vulnerable to the chemical environment due to their highly dynamic surface with a large portion of exposed atoms. Hence, oxidation and detrimental defects on the nanocrystal (NC) interface dramatically deteriorate their optical as well as electrical properties. In this study, a simple strategy is proposed not only to obtain good preservation of colloidal semiconductor QDs by using a protective polymer matrix but also to provide excellent accessibility to micro-fabrication by optical lithography. A high-quality QD-polymer nanocomposite with mono-dispersion of the NCs is synthesized by incorporating the colloidal CdSe/CdS NCs into an SU-8 photoresist. Our approach shows that the oxidation of the core/shell QDs embedded in the SU-8 resist is completely avoidable. The deterministic insertion of multiple QDs or a single QD into photonic structures is demonstrated. Single photon generation is obtained and well-preserved in the nanocomposite and the polymeric structures.

Surface plasmon resonance enhancement of photoluminescence intensity and bioimaging application of gold nanorod@CdSe/ZnS quantum dots

Biological applications of core/shell near-infrared quantum dots (QDs) have attracted broad interest due to their unique optical and chemical properties. Additionally, the use of multifunctional nanomaterials with near-infrared QDs and plasmonic functional nanoparticles are promising for applications in electronics, bioimaging, energy, and environmental-related studies. In this work, we experimentally demonstrate how to construct a multifunctional nanoparticle comprised of CdSe/ZnS QDs and gold nanorods (GNRs) where the GNRs were applied to enhance the photoluminescence (PL) of the CdSe/ZnS QDs. In particular, we have obtained the scattering PL spectrum of a single CdSe/ZnS QD and GNR@CdSe/ZnS nanoparticle and comparison results show that the CdSe/ZnS QDs have an apparent PL enhancement of four-times after binding with GNRs. In addition, in vitro experimental results show that the biostability of the GNR@CdSe/ZnS nanoparticles can be improved by using folic acid. A bioimaging study has also been performed where GNR@CdSe/ZnS nanoparticles were used as an optical process for MCF-7 breast cancer cells.

Role of Surface Morphology on Exciton Recombination in Single Quantum Dot-in-Rods Revealed by Optical and Atomic Structure Correlation

The physical structure of colloidal quantum dot (QD) nanostructures strongly influences their optical and electronic behavior. A fundamental understanding of this interplay between structure and function is crucial to fully tailor the performance of QDs and their assemblies. Here, by directly correlating the atomic and chemical structure of single CdSe-CdS quantum dot-in-rods with time-resolved fluorescence measurements on the same structures, we identify morphological irregularities at their surfaces that moderate photoluminescence efficiencies. We find that two nonradiative exciton recombination mechanisms are triggered by these imperfections: charging and trap-assisted nonradiative processes. Furthermore, we show that the proximity of the surface defects to the CdSe core of the core-shell structures influences whether the charging or trap-assisted nonradiative channel dominates exciton recombination. Our results extend to other QD nanostructures and emphasize surface roughness as a crucial parameter when designing colloidal QDs with specific excitonic fates.

Two Mechanisms Determine Quantum Dot Blinking

Many potential applications of quantum dots (QDs) can only be realized once the luminescence from single nanocrystals (NCs) is understood. These applications include the development of quantum logic devices, single-photon sources, long-life LEDs, and single-molecule biolabels. At the single-nanocrystal level, random fluctuations in the QD photoluminescence occur, a phenomenon termed blinking. There are two competing models to explain this blinking: Auger recombination and surface trap induced recombination. Here we use lifetime scaling on core-shell chalcogenide NCs to demonstrate that both types of blinking occur in the same QDs. We prove that Auger-blinking can yield single-exponential on/off times in contrast to earlier work. The surface passivation strategy determines which blinking mechanism dominates. This study summarizes earlier studies on blinking mechanisms and provides some clues that stable single QDs can be engineered for optoelectronic applications.

Impact of Postsynthetic Surface Modification on Photoluminescence Intermittency in Formamidinium Lead Bromide Perovskite Nanocrystals

We study the origin of photoluminescence (PL) intermittency in formamidinium lead bromide (FAPbBr₃, FA = HC(NH₂)₂) nanocrystals and the impact of postsynthetic surface treatments on the PL intermittency. Single-dot spectroscopy revealed the existence of different individual nanocrystals exhibiting either a blinking (binary on-off switching) or flickering (gradual undulation) behavior of the PL intermittency. Although the PL lifetimes of blinking nanocrystals clearly correlate with the individual absorption cross sections, those of flickering nanocrystals show no correlation with the absorption cross sections. This indicates that flickering has an extrinsic origin, which is in contrast to blinking. We demonstrate that the postsynthetic surface treatment with sodium thiocyanate improves the PL quantum yields and completely suppresses the flickering, while it has no significant effect on the blinking behavior. We conclude that the blinking is caused by Auger recombination of charged excitons, and the flickering is due to a temporal drift of the exciton recombination rate induced by surface-trapped electrons.

Reversible Electrochemical Control over Photoexcited Luminescence of Core/Shell CdSe/ZnS Quantum Dot Film

Semiconductor quantum dots (QDs) are widely used in light-emitting diodes and solar cells. Electrochemical modulation is a good way to understand the electrical and optical properties of QDs. In this work, the effects of electrochemical control on photoluminescence (PL) spectra in core/shell CdSe/ZnS QD films are studied. The results show different spectral responses for surface emission and core emission when a negative electrochemical potential is applied: the core emission is redshifted while the surface emission is blueshifted. The former is attributed to the electrostatic expansion of the excitonic wave function, due to the asymmetric distribution of adsorbed cations on the surface of the dots. The latter is attributed to the occupation of lower surface states by the injected electrons, i.e., the photoexcited electrons are more likely to be trapped onto higher surface states, leading to a blueshift of the surface emission. Both the spectral shift and the accompanying PL-quenching processes are reversible by resetting the potential.

Biexciton and trion energy transfer from CdSe/CdS giant nanocrystals to Si substrates

Observation of energy transfer (ET) from multiexcitonic (MX) complexes in nanocrystal quantum dots (NQDs) has been severely restricted due to efficient nonradiative Auger recombination leading to very low MX emission quantum yields. Here we employed "giant" CdSe/CdS NQDs with suppressed Auger recombination to study ET of biexcitons (BX) and charged excitons (trions) into Si substrate. Photoluminescence (PL) measurements of (sub)monolayers of gNQDs controllably assembled on various interacting surfaces and augmented by single gNQD's imaging reveal appearance of BX spectral signatures and progressive acceleration of PL lifetimes of all excitonic species on Si substrates. From statistical analysis of a large number of PL lifetime traces, representative exciton, trion and BX ET efficiencies are measured as ∼75%, 55% and 45% respectively. Detailed analysis of the MX's radiative rates demonstrate the crucial role of the radiative (waveguide) ET in maintaining high overall transfer efficiency despite the prevalent Auger recombination. Our observations point towards practical utilization of MX-bearing nanocrystals in future optoelectronics architectures.

Temperature and Wavelength Dependence of Energy Transfer Process Between Quantized States and Surface States in CdSe Quantum Dots

Temperature and wavelength dependence of energy transfer (ET) process between quantized states and surface trap states of CdSe quantum dots was investigated, respectively. The experimental results demonstrate that the photoluminescence (PL) intensity of the quantized states decreases with respect to the trap state emission, especially at lower temperatures. The observed ET process between quantized states and trap states which is influenced by the thermal population behavior. At the same temperature, the silver films can greatly enhance the energy transfer (ET) rate from the quantized states to trap states due to surface plasmonic coupling effect.

Dynamic Evolution from Negative to Positive Photocharging in Colloidal CdS Quantum Dots

The optical properties of colloidal semiconductor nanocrystals are largely influenced by the trapping of charge carriers on the nanocrystal surface. Different concentrations of electron and hole traps and different rates of their capture to the traps provide dynamical charging of otherwise neutral nanocrystals. We study the photocharging formation and evolution dynamics in CdS colloidal quantum dots with native oleic acid surface ligands. A time-resolved technique with three laser pulses (pump, orientation, and probe) is developed to monitor the photocharging dynamics with picosecond resolution on wide time scales ranging from picoseconds to milliseconds. The detection is based on measuring the coherent spin dynamics of electrons, allowing us to distinguish the type of carrier in the QD core (electron or hole). We find that although initially negative photocharging happens because of fast hole trapping, it eventually evolves to positive photocharging due to electron trapping and hole detrapping. The positive photocharging lasts up to hundreds of microseconds at room temperature. These findings give insight into the photocharging process and provide valuable information for understanding the mechanisms responsible for the emission blinking in colloidal nanostructures.

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.

Extremely Slow Spontaneous Electron Trapping in Photodoped n-Type CdSe Nanocrystals

The trapping dynamics of conduction-band electrons in colloidal degenerately doped n-CdSe nanocrystals prepared by photochemical reduction (photodoping) were measured by direct optical methods. The nanocrystals show spontaneous electron trapping with distributed kinetics that extend to remarkably long timescales. Shifts in nanocrystal band-edge potentials caused by quantum confinement and surface ion stoichiometry were also measured by spectroelectrochemical techniques, and their relationship to the slow electron trapping is discussed. The very long electron-trapping timescales observed in these measurements are more consistent with atomic rearrangement than with fundamental electron-transfer processes. Such slow and broadly distributed electron-trapping dynamics are reminiscent of the well-known distributed dynamics of nanocrystal photoluminescence blinking, and potential relationships between the two phenomena are discussed.

Photoluminescence Intermittency and Photo-Bleaching of Single Colloidal Quantum Dot

Photoluminescence (PL) blinking of single colloidal quantum dot (QD)-PL intensity switching between different brightness states under constant excitation-and photo-bleaching are roadblocks for most applications of QDs. This progress report shall treat PL blinking and photo-bleaching both as photochemical events, namely, PL blinking as reversible and photo-bleaching being irreversible ones. Most studies on single-molecule spectroscopy of QDs in literature are related to PL blinking, which invites us to concentrate our discussions on the PL blinking, including its brief history in 20 years, analysis methods, competitive mechanisms and different strategies to battle it. In terms of suppression of the PL blinking, wavefunction confinement-confining photo-generated electron and hole within the core and inner portion of the shell of a core/shell QD-demonstrates significant advantages. This strategy yields nearly non-blinking QDs with their emission peaks covering most part of the visible window. As expected, the resulting QDs from this new strategy also show substantially improved anti-bleaching features.

Charging and Discharging Channels in Photoluminescence Intermittency of Single Colloidal CdSe/CdS Core/Shell Quantum Dot

Understanding photoluminescence (PL) intermittency of single quantum dots (QDs) (intensity blinking by randomly switching between distinguishable brightness states under continuous excitation) has been a long-standing fundamental challenge and potential roadblock for their applications. Here we introduce a new analysis method for single-molecule spectroscopy that treats the blinking as photochemical/chemical processes (switching between neutral/bright and charged/dim states). It uncovers the channels for charging (bright to dim) and discharging (dim to bright) involved in PL blinking of single CdSe/CdS core/shell QDs. Both charging and discharging of the single CdSe/CdS core/shell QD possess a photochemical channel (∼10^-5 to 10^-6 events/photon) that linearly depends on excitation in both single- and multi-exciton regime. These two linear channels coupled to a spontaneous discharging channel (∼2 events/s) to dictate the QDs from nonblinking to gradually blinking under increasing excitation. For high-quality CdSe/CdS core/shell QDs, Auger ionization of multiexciton for both charging and discharging is negligible.

Organic Optoelectronic Materials: Mechanisms and Applications

Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjugated polymers are considered, and their applications in organic solar cells, photodetectors, and photorefractive devices are discussed.

Origin and control of blinking in quantum dots

Semiconductor nanocrystals offer an enormous diversity of potential device applications, based on their size-tunable photoluminescence, high optical stability and 'bottom-up' chemical approaches to self-assembly. However, the promise of such applications can be seriously limited by photoluminescence intermittency in nanocrystal emission, that is, 'blinking', arising from the escape of either one or both of the photoexcited carriers to the nanocrystal surface. In the first scenario, the remaining nanocrystal charge quenches photoluminescence via non-radiative Auger recombination, whereas for the other, the exciton is thought to be intercepted before thermalization and does not contribute to the photoluminescence. This Review summarizes the current understanding of the mechanisms responsible for nanocrystal blinking kinetics as well as core-shell engineering efforts to control such phenomena. In particular, 'softening' of the core-shell confinement potential strongly suppresses non-radiative Auger processes in charged nanocrystals, with successful non-blinking implementations demonstrated in CdSe-CdS core-thick-shell nanocrystals and their modifications.

Photoluminescence Blinking of Single-Crystal Methylammonium Lead Iodide Perovskite Nanorods Induced by Surface Traps

Photoluminescence (PL) of organometal halide perovskite materials reflects the charge dynamics inside of the material and thus contains important information for understanding the electro-optical properties of the material. Interpretation of PL blinking of methylammonium lead iodide (MAPbI₃) nanostructures observed on polycrystalline samples remains puzzling owing to their intrinsic disordered nature. Here, we report a novel method for the synthesis of high-quality single-crystal MAPbI₃ nanorods and demonstrate a single-crystal study on MAPbI₃ PL blinking. At low excitation power densities, two-state blinking was found on individual nanorods with dimensions of several hundred nanometers. A super-resolution localization study on the blinking of individual nanorods showed that single crystals of several hundred nanometers emit and blink as a whole, without showing changes in the localization center over the crystal. Moreover, both the blinking ON and OFF times showed power-law distributions, indicating trapping-detrapping processes. This is further supported by the PL decay times of the individual nanorods, which were found to correlate with the ON/OFF states. Furthermore, a strong environmental dependence of the nanorod PL blinking was revealed by comparing the measurements in vacuum, nitrogen, and air, implying that traps locate close to crystal surfaces. We explain our observations by proposing surface charge traps that are likely related to under-coordinated lead ions and methylammonium vacancies to result in the PL blinking observed here.

Carrier Multiplication in a Single Semiconductor Nanocrystal

To confirm the existence of the carrier multiplication (CM) effect and estimate its generation efficiency of multiple excitons in semiconductor nanocrystals (NCs), it is imperative to completely exclude the false contribution of charged excitons from the measured CM signal. Here we place single CdSe NCs above an aluminum film and successfully resolve their UV-excited photoluminescence (PL) time trajectories where the true and false CM signals are contained in the blinking "on" and "off" levels, respectively. By analyzing the PL dynamics of the on-level photons, an average CM efficiency of ∼20.2% can be reliably estimated when the UV photon energy is ∼2.46 times the NC energy gap.

Microstructural and optical properties of CdSe/CdS/ZnS core-shell-shell quantum dots

CdSe/CdS/ZnS core-shell-shell quantum dots (QDs) were synthesized by using a solution process. High-resolution transmission electron microscopy images and energy dispersive spectroscopy profiles confirmed that stoichiometric CdSe/CdS/ZnS core-shell-shell QDs were formed. Ultraviolet-visible absorption and photoluminescence (PL) spectra of CdSe/CdS/ZnS core-shell-shell QDs showed the dominant excitonic transitions from the ground electronic subband to the ground hole subband (1S(e)-1S(3/2)(h)). The PL mechanism is suggested; the carriers generated by the exciting high-energy photons in the shell region are relaxed to the band-edge states of the core region and recombined to emit lower-energy photons. The activation energy of the carriers confined in the CdSe/CdS/ZnS core-shell-shell QDs, as obtained from temperature-dependent PL spectra, was 200 meV. The quantum efficiency of the CdSe/CdS/ZnS core-shell-shell QDs at 300 K was estimated to be approximately 57%.

Delayed Exciton Emission and Its Relation to Blinking in CdSe Quantum Dots

The efficiency and stability of emission from semiconductor nanocrystal quantum dots (QDs) is negatively affected by "blinking" on the single-nanocrystal level, that is, random alternation of bright and dark periods. The time scales of these fluctuations can be as long as many seconds, orders of magnitude longer than typical lifetimes of exciton states in QDs. In this work, we investigate photoluminescence from QDs delayed over microseconds to milliseconds. Our results prove the existence of long-lived charge-separated states in QDs. We study the properties of delayed emission as a direct way to learn about charge carrier separation and recovery of the exciton state. A new microscopic model is developed to connect delayed emission to exciton recombination and blinking from which we conclude that bright periods in blinking are in fact not characterized by uninterrupted optical cycling as often assumed.

Charge Blinking Statistics of Semiconductor Nanocrystals Revealed by Carbon Nanotube Single Charge Sensors

We demonstrate the relation between the optical blinking of colloidal semiconductor nanocrystals (NCs) and their electrical charge blinking for which we provide the first experimental observation of power-law statistics. To show this, we harness the performance of CdSe/ZnS NCs coupled with carbon nanotube field-effect transistors (CNTFETs), which act as single charge-sensitive electrometers with submillisecond time resolution, at room temperature. A random telegraph signal (RTS) associated with the NC single-trap charging is observed and exhibits power-law temporal statistics (τ(-α), with α in the range of ∼1-3), and a Lorentzian current noise power spectrum with a well-defined 1/f(2) corner. The spectroscopic analysis of the NC-CNTFET devices is consistent with the charging of NC defect states with a charging energy of Ec ≥ 200 meV. These results pave the way for a deeper understanding of the physics and technology of nanocrystal-based optoelectronic devices.

Non-blinking (Zn)CuInS/ZnS Quantum Dots Prepared by In Situ Interfacial Alloying Approach

Semiconductor quantum dots (QDs) are very important optical nanomaterials with a wide range of potential applications. However, blinking behavior of single QD is an intrinsic drawback for some biological and photoelectric applications based on single-particle emission. Herein we present a rational strategy for fabrication of non-blinking (Zn)CuInS/ZnS QDs in organic phase through in situ interfacial alloying approach. This new strategy includes three steps: synthesis of CuInS QDs, eliminating the interior traps of QDs by forming graded (Zn)CuInS alloyed QDs, modifying the surface traps of QDs by introducing ZnS shells onto (Zn)CuInS QDs using alkylthiols as sulfur source and surface ligands. The suppressed blinking mechanism was mainly attributed to modifying QDs traps from interior to exterior via a step-by-step modification. Non-blinking QDs show high quantum yield, symmetric emission spectra and excellent crystallinity, and will enable applications from biology to optoelectronics that were previously hindered by blinking behavior of traditional QDs.

Photon Antibunching in Small Clusters of CdSe/ZnS Core/Shell Quantum Dots

Coincident photon histogram measurements of fluorescence antibunching via confocal microscopy correlated with atomic force microscopy were carried out on (i) individual CdSe/ZnS core/shell quantum dots (QDs), (ii) several well separated QDs, and (iii) clusters of QDs. Individual QDs and well separated QDs showed the expected degree of antibunching for a single emitter and several independent emitters, respectively. The degree of antibunching in small, compact clusters was more characteristic of a single emitter than multiple emitters. The antibunching in clusters provides strong evidence of nonradiative energy transfer between QDs in a cluster. A minimal phenomenological model of energy transfer gives reasonable quantitative agreement with the experimental results.

Mobile Charge-Induced Fluorescence Intermittency in Methylammonium Lead Bromide Perovskite

Organic-inorganic halide perovskite has emerged as a very promising material for solar cells due to its excellent photovoltaic enabling properties resulting in rapid increase in device efficiency over the last 3 years. Extensive knowledge and in-depth physical understanding in the excited state carrier dynamics are urgently required. Here we investigate the fluorescence intermittency (also known as blinking) in vapor-assisted fabricated CH3NH3PbBr3 perovskite. The evident fluorescence blinking is observed in a dense CH3NH3PbBr3 perovskite film that is composed of nanoparticles in close contact with each other. In the case of an isolated nanoparticle no fluorescence blinking is observed. The "ON" probability of fluorescence is dependent on the excitation intensity and exhibits a similar power rule to semiconductor quantum dots at higher excitation intensity. As the vapor-assisted fabricated CH3NH3PbBr3 perovskite film is a cluster of nanoparticles forming a dense film, it facilitates mobile charge migration between the nanoparticles and charge accumulation at the surface or at the boundary of the nanoparticles. This leads to enhanced Auger-like nonradiative recombination contributing to the fluorescence intermittency observed. This finding provides unique insight into the charge accumulation and migration and thus is of crucial importance for device design and improvement.

Photoluminescence Blinking and Reversible Electron Trapping in Copper-Doped CdSe Nanocrystals

Single-particle photoluminescence blinking is observed in the copper-centered deep-trap luminescence of copper-doped CdSe (Cu(+):CdSe) nanocrystals. Blinking dynamics for Cu(+):CdSe and undoped CdSe nanocrystals are analyzed to identify the effect of Cu(+), which selectively traps photogenerated holes. Analysis of the blinking data reveals that the Cu(+):CdSe and CdSe nanocrystal "off"-state dynamics are statistically identical, but the Cu(+):CdSe nanocrystal "on" state is shorter lived. Additionally, a new and pronounced temperature-dependent delayed luminescence is observed in the Cu(+):CdSe nanocrystals that persists long beyond the radiative lifetime of the luminescent excited state. This delayed luminescence is analogous to the well-known donor-acceptor pair luminescence of bulk copper-doped phosphors and is interpreted as revealing metastable charge-separated excited states formed by reversible electron trapping at the nanocrystal surfaces. A mechanistic link between this delayed luminescence and the luminescence blinking is proposed. Collectively, these data suggest that electron (rather than hole) trapping/detrapping is responsible for photoluminescence intermittency in these nanocrystals.

Two types of the relation between the intensity and the life time of photoluminescence of core/shell semiconductor quantum dots: important role of Coulomb field and tunneling transitions

It has been recently found [Gh. Galland, Y. Ghosh, A. Steinbrück, M. Sykora, J. A. Hollingsworth, and V. I. Klimov, Nature (London) 479, 203 (2011)] that semiconductor core/shell nanocrystals (NCs) with blinking photoluminescence (PL) can be of "A" or "B" type. NCs of A-type exhibit correlation between the intensity of PL and the life time. In NCs of B-type such correlation is absent. Simple model based on combination of the charging model and the two-level system model is proposed for describing emissive properties of NCs of both types. The model invokes fluctuations of emission ability γ(em) of NC to explain the emissive properties of NCs of B-type. Our combined model is also in agreement with anticorrelation between the duration τ(off) of off intervals and PL life time t(off) in off intervals found recently for NCs of A-type in the experiment [A. A. Cordones, T. J. Bixby, and S. R. Leone, Nano Lett. 11, 3366 (2011)].

Two-state theory of binned photon statistics for a large class of waiting time distributions and its application to quantum dot blinking

A theoretical method is proposed for the calculation of the photon counting probability distribution during a bin time. Two-state fluorescence and steady excitation are assumed. A key feature is a kinetic scheme that allows for an extensive class of stochastic waiting time distribution functions, including power laws, expanded as a sum of weighted decaying exponentials. The solution is analytic in certain conditions, and an exact and simple expression is found for the integral contribution of "bright" and "dark" states. As an application for power law kinetics, theoretical results are compared with experimental intensity histograms from a number of blinking CdSe/ZnS quantum dots. The histograms are consistent with distributions of intensity states around a "bright" and a "dark" maximum. A gap of states is also revealed in the more-or-less flat inter-peak region. The slope and to some extent the flatness of the inter-peak feature are found to be sensitive to the power-law exponents. Possible models consistent with these findings are discussed, such as the combination of multiple charging and fluctuating non-radiative channels or the multiple recombination center model. A fitting of the latter to experiment provides constraints on the interaction parameter between the recombination centers. Further extensions and applications of the photon counting theory are also discussed.

Metal-enhanced luminescence of silicon quantum dots: effects of nanoparticles and molecular electron donors and acceptors on the photofading kinetics

Alkyl-capped silicon quantum dots (SiQDs) show enhanced luminescence when drop cast as films on glass slides in mixtures with Ag or Au nanoparticles or the electron donor ferrocene (Fc). Metal enhancement of quantum dot photoluminescence (PL) is known to arise from a combination of the intense near-field associated with the surface plasmon of the metal on the rate of absorption and the decrease in the lifetime of the excited state. Here we present evidence that an additional factor is also involved: electron transfer from the metal to the quantum dot. Under CW irradiation with an argon ion laser at 488 nm, SiQDs undergo a reversible photofading of the PL as the particles photoionize. A steady-state condition is established by the competition between photoionization and electron-hole recombination. The fading of the initial PL I0 to the steady-state value I∞ can be modelled by a simple first order decay with a lognormal distribution of rates, which reflects the heterogeneity of the sample. In the presence of Ag and Au nanoparticles, the modal rate constants of photofading increase by factors of up to 4-fold and the ratio I0/I∞ decreases by factors up to 5-fold; this is consistent with an increase in the rate of electron-hole recombination facilitated by the metal nanoparticles acting as sources of electrons. Further support for this interpretation comes from the enhancement in PL observed in photofading experiments with films of SiQDs mixed with Fc; this compound is a well-known one-electron donor, but shows no plasmon band which complicates the estimation of PL enhancement with Ag NPs.

Defect-induced photoluminescence blinking of single epitaxial InGaAs quantum dots

Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the "off" period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the defect site so that its PL rise lifetime is shorter than that of the "on" period. For the "off" period in the second type of PL blinking, the electrons relax from the first excited state (emission state) into the defect site, leading to a shortened PL decay lifetime compared to that of the "on" period. This defect-induced exciton quenching in epitaxial QDs, previously demonstrated also in colloidal nanocrystals, confirms that these two important semiconductor nanostructures could share the same PL blinking mechanism.

Surface dangling bonds are a cause of B-type blinking in Si nanoparticles

Exponential blinking statistics was reported in oxidized Si nanoparticles and the switching mechanism was attributed to the activation and deactivation of unidentified nonradiative recombination centers. Using ab initio calculations we predicted that Si dangling bonds at the surface of oxidized nanoparticles introduce defect states which, depending on their charge and local stress conditions, may give rise to ON and OFF states responsible for exponential blinking statistics. Our results are based on first principles calculations of charge transition levels, single particle energies, and radiative and nonradiative lifetimes of dangling bond defects at the surface of oxidized silicon nanoparticles under stress.

Stacking in colloidal nanoplatelets: tuning excitonic properties

Colloidal semiconductor quantum wells, also commonly known as nanoplatelets (NPLs), have arisen among the most promising materials for light generation and harvesting applications. Recently, NPLs have been found to assemble in stacks. However, their emerging characteristics essential to these applications have not been previously controlled or understood. In this report, we systematically investigate and present excitonic properties of controlled column-like NPL assemblies. Here, by a controlled gradual process, we show that stacking in colloidal quantum wells substantially increases exciton transfer and trapping. As NPLs form into stacks, surprisingly we find an order of magnitude decrease in their photoluminescence quantum yield, while the transient fluorescence decay is considerably accelerated. These observations are corroborated by ultraefficient Förster resonance energy transfer (FRET) in the stacked NPLs, in which exciton migration is estimated to be in the ultralong range (>100 nm). Homo-FRET (i.e., FRET among the same emitters) is found to be ultraefficient, reaching levels as high as 99.9% at room temperature owing to the close-packed collinear orientation of the NPLs along with their large extinction coefficient and small Stokes shift, resulting in a large Förster radius of ∼13.5 nm. Consequently, the strong and long-range homo-FRET boosts exciton trapping in nonemissive NPLs, acting as exciton sink centers, quenching photoluminescence from the stacked NPLs due to rapid nonradiative recombination of the trapped excitons. The rate-equation-based model, which considers the exciton transfer and the radiative and nonradiative recombination within the stacks, shows an excellent match with the experimental data. These results show the critical significance of stacking control in NPL solids, which exhibit completely different signatures of homo-FRET as compared to that in colloidal nanocrystals due to the absence of inhomogeneous broadening.

Assessing the blinking state of fluorescent quantum dots in free solution by combining fluorescence correlation spectroscopy with ensemble spectroscopic methods

The current method for investigating the blinking behavior is to immobilize quantum dots (QDs) in the matrix and then apply a fluorescent technique to monitor the fluorescent trajectories of individual QDs. So far, no method can be used to directly assess the blinking state of ensemble QDs in free solution. In this study, a new method was described to characterize the blinking state of the QDs in free solution by combining single molecule fluorescence correlation spectroscopy (FCS) with ensemble spectroscopic methods. Its principle is based on the observation that the apparent concentration of bright QDs obtained by FCS is less than its actual concentration measured by ensemble spectroscopic method due to the QDs blinking. We proposed a blinking index (Kblink) for characterizing the blinking state of QDs, and Kblink is defined as the ratio of the actual concentration (Cb,actual) measured by the ensemble spectroscopic method to the apparent concentration (Cb,app) of QDs obtained by FCS. The effects of certain factors such as laser intensity, growth process, and ligands on blinking of QDs were investigated. The Kblink data of QDs obtained were successfully used to characterize the blinking state of QDs and explain certain experimental results.

Coherent magnetic resonance of nanocrystal quantum-dot luminescence as a window to blinking mechanisms

Blinking of colloidal nanocrystal quantum dots, random intermittency in the stream of photons emitted by single particles, has long commanded the curiosity of researchers. Why does the particle suddenly shut off, and what are the pathways to quench emission? Single-particle microscopy is not the only way to approach these fundamental questions on the interaction of light and matter: time-domain sub-ensemble spectroscopies can also yield relevant information on microscopic electronic processes. We illustrate recent advances in pulsed optically detected magnetic resonance and highlight the conceptual relevance to unravelling mechanisms controlling intermittency on the single-particle level. Magnetic resonance reveals two distinct luminescence quenching channels, which appear to be related to those previously surmised from single-particle studies: a trapped charge-separated state in which the exciton is quenched by dissociation and the particle remains neutral; and a charged state of the particle in which spin-dependent Auger recombination quenches luminescence.

The fluorescence intermittency for quantum dots is not power-law distributed: a luminescence intensity resolved approach

The photoluminescence (PL) of single emitters like semiconductor quantum dots (QDs) shows PL intermittency, often called blinking. We explore the PL intensities of single CdSe/ZnS QDs in polystyrene (PS), on polyvenylalcohol (PVA), and on silicon oxide (SiOx) by the change-point analysis (CPA). By this, we relate results from the macrotime (sub-ms to 1000 s) and the microtime (0.1-100 ns) range to discrete PL intensities. We conclude that the intensity selected "on"-times in the ms range correspond to only a few (discrete) switching times, while the PL decays in the ns range are multiexponential even with respect to the same selected PL intensity. Both types of relaxation processes depend systematically on the PL intensity in course of a blinking time trace. The overall distribution of on-times does not follow a power law contrary to what has often been reported but can be compiled into 3-4 characteristic on-times. The results can be explained by the recently suggested multiple recombination centers model. Additionally, we can identify a well-defined QD state with a very low PL intensity above the noise level, which we assign to the strongly quenched exciton state. We describe our findings by a model of a hierarchical sequence of hole and electron trapping. Blinking events are the consequence of slow switching processes among these states and depend on the physicochemical properties of the heterogeneous nanointerface of the QDs.

Atomistic model of fluorescence intermittency of colloidal quantum dots

Optoelectronic applications of colloidal quantum dots demand a high emission efficiency, stability in time, and narrow spectral bandwidth. Electronic trap states interfere with the above properties but understanding of their origin remains lacking, inhibiting the development of robust passivation techniques. Here we show that surface vacancies improve the fluorescence yield compared to vacancy-free surfaces, while dynamic vacancy aggregation can temporarily turn fluorescence off. We find that infilling with foreign cations can stabilize the vacancies, inhibiting intermittency and improving quantum yield, providing an explanation of recent experimental observations.

Influence of the core size on biexciton quantum yield of giant CdSe/CdS nanocrystals

We present a systematic study of photoluminescence (PL) emission intensity and biexciton (BX) quantum yields (QYBX) in individual "giant" CdSe/CdS nanocrystals (g-NCs) as a function of g-NC core size and shell thickness. We show that g-NC core size significantly affects QYBX and can be utilized as an effective tuning parameter towards higher QYBX while keeping the total volume of the g-NC constant. Specifically, we observe that small-core (2.2 nm diameter) CdSe/CdS NCs with a volume of ∼200 nm(3) (shell comprises 4 CdS monolayers) show very low average and maximum QYBX's of ∼3 and 7%, respectively. In contrast, same-volume medium-core (3 nm diameter) NCs afford higher average values of ∼10%, while QYBX's of ∼30% are achieved for same-volume large-core (5.5 nm diameter) CdSe/CdS NCs, with some approaching ∼80%. These observations underline the influence of the g-NC core size on the evolution of PL emissive states in multi-shell NCs. Moreover, our study also reveals that the use of long anneal times in the growth of CdS shells plays a critical role in achieving high QYBX.