1
|
Ying P, Hod O, Urbakh M. Superlubric Graphullerene. NANO LETTERS 2024. [PMID: 39158098 DOI: 10.1021/acs.nanolett.4c02794] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
Graphullerene (GF), an extended quasi-two-dimensional network of C60 molecules, is proposed as a multicontact platform for constructing superlubric interfaces with layered materials. Such interfaces are predicted to present very small and comparable sliding energy corrugation regardless of the identity of the underlying flat layered material surface. It is shown that, beyond the geometrical effect, covalent interlinking between the C60 molecules results in reduction of the sliding energy barrier. For extended GF supercells, negligible sliding energy barriers are found along all sliding directions considered, even when compared to the case of the robust superlubric graphene/h-BN heterojunction. This suggests that multicontact architectures can be used to design ultrasuperlubric interfaces, where superlubricity may persist under extreme sliding conditions.
Collapse
Affiliation(s)
- Penghua Ying
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences, and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences, and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences, and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| |
Collapse
|
2
|
Ying P, Natan A, Hod O, Urbakh M. Effect of Interlayer Bonding on Superlubric Sliding of Graphene Contacts: A Machine-Learning Potential Study. ACS NANO 2024; 18:10133-10141. [PMID: 38546136 PMCID: PMC11008353 DOI: 10.1021/acsnano.3c13099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Revised: 03/11/2024] [Accepted: 03/19/2024] [Indexed: 04/10/2024]
Abstract
Surface defects and their mutual interactions are anticipated to affect the superlubric sliding of incommensurate layered material interfaces. Atomistic understanding of this phenomenon is limited due to the high computational cost of ab initio simulations and the absence of reliable classical force-fields for molecular dynamics simulations of defected systems. To address this, we present a machine-learning potential (MLP) for bilayer defected graphene, utilizing state-of-the-art graph neural networks trained against many-body dispersion corrected density functional theory calculations under iterative configuration space exploration. The developed MLP is utilized to study the impact of interlayer bonding on the friction of bilayer defected graphene interfaces. While a mild effect on the sliding dynamics of aligned graphene interfaces is observed, the friction coefficients of incommensurate graphene interfaces are found to significantly increase due to interlayer bonding, nearly pushing the system out of the superlubric regime. The methodology utilized herein is of general nature and can be adapted to describe other homogeneous and heterogeneous defected layered material interfaces.
Collapse
Affiliation(s)
- Penghua Ying
- Department
of Physical Chemistry, School of Chemistry, The Raymond and Beverly
Sackler Faculty of Exact Sciences and The Sackler Center for Computational
Molecular and Materials Science, Tel Aviv
University, Tel Aviv 6997801, Israel
| | - Amir Natan
- Department
of Physical Electronics, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Oded Hod
- Department
of Physical Chemistry, School of Chemistry, The Raymond and Beverly
Sackler Faculty of Exact Sciences and The Sackler Center for Computational
Molecular and Materials Science, Tel Aviv
University, Tel Aviv 6997801, Israel
| | - Michael Urbakh
- Department
of Physical Chemistry, School of Chemistry, The Raymond and Beverly
Sackler Faculty of Exact Sciences and The Sackler Center for Computational
Molecular and Materials Science, Tel Aviv
University, Tel Aviv 6997801, Israel
| |
Collapse
|
3
|
Novotný M, Dubecký M, Karlický F. Toward accurate modeling of structure and energetics of bulk hexagonal boron nitride. J Comput Chem 2024; 45:115-121. [PMID: 37737623 DOI: 10.1002/jcc.27222] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Revised: 08/17/2023] [Accepted: 08/25/2023] [Indexed: 09/23/2023]
Abstract
Materials that exhibit both strong covalent and weak van der Waals interactions pose a considerable challenge to many computational methods, such as DFT. This makes assessing the accuracy of calculated properties, such as exfoliation energies in layered materials like hexagonal boron nitride (h-BN) problematic, when experimental data are not available. In this paper, we investigate the accuracy of equilibrium lattice constants and exfoliation energy calculation for various DFT-based computational approaches in bulk h-BN. We contrast these results with available experiments and reference fixed-node diffusion quantum Monte Carlo (QMC) results. From our reference QMC calculation, we obtained an exfoliation energy of - 33 ± 2 meV/atom (-0.38 ± 0.02 J/m2 ).
Collapse
Affiliation(s)
- Michal Novotný
- Department of Physics, Faculty of Science, University of Ostrava, Ostrava, Czech Republic
| | - Matúš Dubecký
- Department of Physics, Faculty of Science, University of Ostrava, Ostrava, Czech Republic
- ATRI, Faculty of Materials Science and Technology in Trnava, Slovak University of Technology in Bratislava, Trnava, Slovakia
| | - František Karlický
- Department of Physics, Faculty of Science, University of Ostrava, Ostrava, Czech Republic
| |
Collapse
|
4
|
Ali M, Yousaf M, Munir J, Iqbal Khan MJ. Achieving controllable multifunctionality through layer sliding. J Mol Graph Model 2024; 126:108638. [PMID: 37757650 DOI: 10.1016/j.jmgm.2023.108638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 09/05/2023] [Accepted: 09/18/2023] [Indexed: 09/29/2023]
Abstract
Dynamical variation of physical properties in a controllable fashion provides exciting possibilities to obtain multifunctional materials. In this work, layer-sliding is employed to modify the structural, interfacial electronic and optical properties of unintercalated and Mg-intercalated two-dimensional (2D) van der Waals heterostructure (vdW-HS) consisting of buckled silicene and hexagonal boron nitride (hBN). The most stable stacking configuration of silicene over hBN is screened out and then intercalated with Mg at the interface. Dynamical-dependent changes in the properties of vdW-HS are performed by sliding silicene over hBN monolayer in the absence and presence of the intercalant. Layer-sliding is carried out in equal length intervals, and various parametric quantities related to the physical characteristics of the vdW-HS are repeatedly calculated and compared. Apart from various parametric quantities, stability of unintercalated and Mg-intercalated vdW-HS is also checked by means of relative total energies, binding energies and vdW gaps along the sliding pathway. Comparison of binding energies shows that the un-slided, half-slided, and fully-slided Mg-intercalated vdW-HS are 1.52, 1.44 and 1.42 eV more stable than the unintercalated vdW-HS. Opening of a small band gap of 12, 31 and 28 meV for un-slided, half-slided and fully-slided unintercalated vdW-HS, respectively, is worth mentioning. To study the interfacial electronic behavior, planar average charge density difference (Δρ) and charge transfer (ΔQ) are also calculated and varied via layer-sliding. Further, we calculated diverse optical spectra such as the complex dielectric function (DF), electron energy loss function [L(ω)], diagonal components of dielectric tensor [ε(iω)], refractive index [n(ω)], extinction coefficient [k(ω)], absorption coefficient [α(ω)], and reflectivity [R(ω)] for un-slided, half-slided and fully-slided unintercalated and Mg-intercalated vdW-HS. Interestingly, the polarization and energy losses have been reduced in the case of Mg-intercalated vdW-HS. The suggested layer-sliding method can be established as a general scheme for bringing multifunctionality into a layered material.
Collapse
Affiliation(s)
- Mubashar Ali
- Department of Physics, University of Education, Lahore, Pakistan
| | - Masood Yousaf
- Department of Physics, University of Education, Lahore, Pakistan.
| | - Junaid Munir
- Department of Physics, Riphah International University, Lahore, Pakistan
| | - M Junaid Iqbal Khan
- Laboratory of Theoretical and Experimental Physics, Department of Physics, Bahauddin Zakariya University, Multan, 60800, Pakistan
| |
Collapse
|
5
|
Sun J, Zhang X, Du S, Pu J, Wang Y, Yuan Y, Qian L, Francisco JS. Charge Density Evolution Governing Interfacial Friction. J Am Chem Soc 2023; 145:5536-5544. [PMID: 36811399 DOI: 10.1021/jacs.3c00335] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/24/2023]
Abstract
It is well-known that the electron nature of a solid in contact plays a predominant role in determining the many properties of the contact systems, but the general rules of electron coupling that govern interfacial friction remain an open issue for the surface/interface community. Here, density functional theory calculations were used to investigate the physical origins of friction of solid interfaces. It was found that interfacial friction can be inherently traced back to the electronic barrier to the change in the contact configuration of the joints in slip due to the resistance of energy level rearrangement leading to electron transfer, which applies for various interface types ranging from van der Waals, metallic, and ionic to covalent joints. The variation of the electron density accompanying contact conformation changes along the sliding pathways is defined to track the frictional energy dissipation process occurring in slip. The results demonstrate that the frictional energy landscapes evolve synchronously with responding charge density evolution along sliding pathways, yielding an explicitly linear dependence of frictional dissipation on electronic evolution. The correlation coefficient enables us to interpret the fundamental concept of shear strength. The present charge evolution model thereby provides insights into the classic hypothesis that the friction force scales with the real contact area. This may shed light on the intrinsic origin of friction at the electronic level, opening the way to the rational design of nanomechanical devices as well as the understanding of the natural faults.
Collapse
Affiliation(s)
- Junhui Sun
- School of Mechanical Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, China.,State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Xin Zhang
- School of Mechanical Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, China
| | - Shiyu Du
- Engineering Laboratory of Advanced Energy Materials, Key Laboratory of Marine Materials and Related Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.,School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, China
| | - Jibin Pu
- Engineering Laboratory of Advanced Energy Materials, Key Laboratory of Marine Materials and Related Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Yang Wang
- School of Mechanical Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, China
| | - Yanping Yuan
- School of Mechanical Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, China
| | - Linmao Qian
- School of Mechanical Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, China
| | - Joseph S Francisco
- Department of Earth and Environmental Science and Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| |
Collapse
|
6
|
Naclerio AE, Kidambi PR. A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207374. [PMID: 36329667 DOI: 10.1002/adma.202207374] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.
Collapse
Affiliation(s)
- Andrew E Naclerio
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| | - Piran R Kidambi
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| |
Collapse
|
7
|
Cao W, Hod O, Urbakh M. Interlayer Registry Dictates Interfacial 2D Material Ferroelectricity. ACS APPLIED MATERIALS & INTERFACES 2022; 14:57492-57499. [PMID: 36519727 DOI: 10.1021/acsami.2c20411] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
We discover that the complex ferroelectric response of layered materials toward interlayer sliding is fully dictated by the interlayer lattice registry. Importantly, the entire sliding polarization landscape of two-dimensional (2D) layered material interfaces is fully described via a simple and intuitive geometric measure, termed the polarization registry index (PRI), that quantifies the degree of interlayer commensurability. Beyond the understanding of the fundamental origin of 2D ferroelectricity, the developed tool also provides highly efficient characterization and rationalization of existing experimental and computational evidence of 2D interfacial ferroelectricity, as well as the prediction of emergent controllable polarization in new noncentrosymmetric layered systems.
Collapse
Affiliation(s)
- Wei Cao
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| |
Collapse
|
8
|
Soares EA, Paier J, Gura L, Burson K, Ryczek C, Yang Z, Stavale F, Heyde M, Freund HJ. Structure and registry of the silica bilayer film on Ru(0001) as viewed by LEED and DFT. Phys Chem Chem Phys 2022; 24:29721-29730. [PMID: 36454101 DOI: 10.1039/d2cp04624e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Silica bilayers are stable on various metal substrates, including Ru(0001) that is used for the present study. In a systematic attempt to elucidate the detailed structure of the silica bilayer film and its registry to the metal substrate, we performed a low energy electron diffraction (I/V-LEED) study. The experimental work is accompanied by detailed calculations on the stability, orientation and dynamic properties of the bilayer at room temperature. It was determined, that the film shows a certain structural diversity within the unit cell of the metal substrate, which depends on the oxygen content at the metal-bilayer interface. In connection with the experimental I/V-LEED study, it became apparent, that a high-quality structure determination is only possible if several structural motifs are taken into account by superimposing bilayer structures with varying registry to the oxygen covered substrate. This result is conceptually in line with the recently observed statistical registry in layered 2D-compound materials.
Collapse
Affiliation(s)
- Edmar A Soares
- Department of Physics, Federal University of Minas Gerais, Brazil.,Fritz-Haber-Institute of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.
| | - Joachim Paier
- Institut für Chemie, Humboldt-Universität zu Berlin, 10099 Berlin, Germany
| | - Leonard Gura
- Fritz-Haber-Institute of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.
| | - Kristen Burson
- Hamilton College, Clinton, New York 13323, USA.,Grinnell College, Grinnell, Iowa 50112, USA
| | | | - Zechao Yang
- Fritz-Haber-Institute of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.
| | - Fernando Stavale
- Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro, Brazil.,Fritz-Haber-Institute of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.
| | - Markus Heyde
- Fritz-Haber-Institute of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.
| | - Hans-Joachim Freund
- Fritz-Haber-Institute of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.
| |
Collapse
|
9
|
Lv M, Sun X, Chen Y, Taniguchi T, Watanabe K, Wu M, Wang J, Xue J. Spatially Resolved Polarization Manipulation of Ferroelectricity in Twisted hBN. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203990. [PMID: 36271514 DOI: 10.1002/adma.202203990] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Revised: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Robust room-temperature interfacial ferroelectricity has been formed in the 2D limit by simply twisting two atomic layers of non-ferroelectric hexagonal boron nitride (hBN). A thorough understanding of this newly discovered ferroelectric system is required. Here, twisted hBN is used as a tunneling junction and it is studied at the nanometer scale using conductive atomic force microscopy. Three properties unique to this system are discovered. First, the polarization dependence of the tunneling resistance contrasts with the conventional theory. Second, the ferroelectric domains can be controlled using mechanical stress, highlighting the original meaning of the emergent "slidetronics". Third, ferroelectric hysteresis is highly spatially dependent. The hysteresis is symmetric at the domain walls. A few nanometers away, the hysteresis shifts completely to the positive or negative side, depending on the original polarization. These findings reveal the unconventional ferroelectricity in this 2D system.
Collapse
Affiliation(s)
- Ming Lv
- School of Physical Science and Technology, ShanghaiTech University, Pudong, Shanghai, 201210, China
| | - Xinzuo Sun
- School of Physical Science and Technology, ShanghaiTech University, Pudong, Shanghai, 201210, China
| | - Yan Chen
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Hongkou, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200438, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Menghao Wu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Jianlu Wang
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Hongkou, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200438, China
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Pudong, Shanghai, 201210, China
| |
Collapse
|
10
|
Moazzami Gudarzi M, Aboutalebi SH. Mapping the Binding Energy of Layered Crystals to Macroscopic Observables. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204001. [PMID: 36253141 PMCID: PMC9685473 DOI: 10.1002/advs.202204001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Van der Waals (vdW) integration of two dimensional (2D) crystals into functional heterostructures emerges as a powerful tool to design new materials with fine-tuned physical properties at an unprecedented precision. The intermolecular forces governing the assembly of vdW heterostructures are investigated by first-principles models, yet translating the outcome of these models to macroscopic observables in layered crystals is missing. Establishing this connection is, therefore, crucial for ultimately designing advanced materials of choice-tailoring the composition to functional device properties. Herein, components from both vdW and non-vdW forces are integrated to build a comprehensive framework that can quantitatively describe the dynamics of these forces in action. Specifically, it is shown that the optical band gap of layered crystals possesses a peculiar ionic character that works as a quantitative indicator of non-vdW forces. Using these two components, it is then described why only a narrow range of exfoliation energies for this class of materials is observed. These findings unlock the microscopic origin of universal binding energy in layered crystals and provide a general protocol to identify and synthesize new crystals to regulate vdW coupling in the next generation of heterostructures.
Collapse
Affiliation(s)
- Mohsen Moazzami Gudarzi
- National Graphene InstituteUniversity of ManchesterManchesterM13 9PLUK
- Department of MaterialsSchool of Natural SciencesThe University of ManchesterManchesterM13 9PLUK
| | - Seyed Hamed Aboutalebi
- Condensed Matter National LaboratoryInstitute for Research in Fundamental SciencesTehran19395‐5531Iran
| |
Collapse
|
11
|
Zhou X, Chen P, Xu RG, Zhang C, Zhang J. Interfacial friction of vdW heterostructures affected by in-plane strain. NANOTECHNOLOGY 2022; 34:015708. [PMID: 36174390 DOI: 10.1088/1361-6528/ac962a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Accepted: 09/28/2022] [Indexed: 06/16/2023]
Abstract
Interfacial properties of van der Waals (vdW) heterostructures dominate the durability and function of their booming practical and potential applications such as opoelectronic devices, superconductors and even pandemics research. However, the strain engineering modulates of interlayer friction of vdW heterostructures consisting of two distinct materials are still unclear, which hinders the applications of vdW heterostructures, as well as the design of solid lubricant and robust superlubricity. In the present paper, a molecular model between a hexagonal graphene flake and a rectangular SLMoS2sheet is established, and the influence of biaxial and uniaxial strain on interlayer friction is explored by molecular dynamics. It is found that the interlayer friction is insensitive to applied strains. Strong robustness of superlubricity between distinct layers is owed to the structure's intrinsic incommensurate characteristics and the existence of Moiré pattern. In engineering practice, it is of potential importance to introduce two distinct 2D materials at the sliding contact interface to reduce the interfacial friction of the contact pair and serve as ideal solid lubricants. Our research provides a further basis to explore the nanotribology and strain engineering of 2D materials and vdW heterostructures.
Collapse
Affiliation(s)
- Xuanling Zhou
- State Key Laboratory for Geomechanics and Deep Underground Engineering, School of Mechanics and Civil Engineering, China University of Mining and Technology, Xuzhou, Jiangsu, 221116, People's Republic of China
| | - Peijian Chen
- State Key Laboratory for Geomechanics and Deep Underground Engineering, School of Mechanics and Civil Engineering, China University of Mining and Technology, Xuzhou, Jiangsu, 221116, People's Republic of China
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and astronautics, Nanjing, Jiangsu, 210016, People's Republic of China
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People's Republic of China
| | - Rong-Guang Xu
- School of Engineering & Applied Science, The George Washington University, Washington DC, WA-20052, United States of America
| | - Cun Zhang
- Department of Engineering Mechanics, Shijiazhuang Tiedao University, Shijiazhuang, 050043, People's Republic of China
| | - Jiazhen Zhang
- State Key Laboratory for Geomechanics and Deep Underground Engineering, School of Mechanics and Civil Engineering, China University of Mining and Technology, Xuzhou, Jiangsu, 221116, People's Republic of China
| |
Collapse
|
12
|
Sunny A, Balapure A, Ganesan R, Thamankar R. Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis. ACS OMEGA 2022; 7:33926-33933. [PMID: 36188247 PMCID: PMC9520545 DOI: 10.1021/acsomega.2c02884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Accepted: 09/06/2022] [Indexed: 06/16/2023]
Abstract
Identification and evaluation of defect levels in low-dimensional materials is an important aspect in quantum science. In this article, we report a facile synthesis method of low-dimensional hexagonal boron nitride (h-BN) and study light emission characteristics due to the defects. The thermal annealing procedure is optimized to obtain clean multilayered h-BN as revealed by transmission electron microscopy. UV-vis spectroscopy shows the optical energy gap of 5.28 eV, which is comparable to the reported energy gap for exfoliated, clean h-BN samples. X-ray photoelectron spectroscopy reveals the location of the valence band edge at 2 eV. The optimized synthesis route of h-BN generates two kinds of defects, which are characterized using room-temperature photoluminescence (PL) measurements. The defects emit light at 4.18 eV [deep-UV (DUV)] and 3.44 eV (UV) photons. The intensity of PL has an oscillatory dependence on the excitation energy for the defect emitting DUV light. A series of spectral lines are observed with the energy ranging between 2.56 and 3.44 eV. The average peak-to-peak energy separation is about 125 meV. The locations of the spectral lines can be modeled using Franck-Condon-type transition and associated with displaced harmonic oscillator approximation. Our facile route gives an easier approach to prepare clean h-BN, which is essential for classical two-dimensional material-based electronics and single-photon-based quantum devices.
Collapse
Affiliation(s)
- Ashly Sunny
- Department
of Physics, School of Advanced Sciences, Vellore Institute of Technology, Vellore, Tamilnadu 632014, India
| | - Aniket Balapure
- Department
of Chemistry, Birla Institute of Technology
and Science (BITS), Pilani,
Hyderabad Campus, Jawahar Nagar, Kapra Mandal, Medchal
District, Hyderabad, Telangana 500078, India
| | - Ramakrishnan Ganesan
- Department
of Chemistry, Birla Institute of Technology
and Science (BITS), Pilani,
Hyderabad Campus, Jawahar Nagar, Kapra Mandal, Medchal
District, Hyderabad, Telangana 500078, India
| | - R. Thamankar
- Centre
for Functional Materials, Vellore Institute
of Technology, Vellore, Tamilnadu 632014, India
| |
Collapse
|
13
|
Dogan M, Cohen ML. Magnetism and interlayer bonding in pores of Bernal-stacked hexagonal boron nitride. Phys Chem Chem Phys 2022; 24:20882-20890. [PMID: 36043383 DOI: 10.1039/d2cp02624d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
When single-layer h-BN is subjected to a high-energy electron beam, triangular pores with nitrogen edges are formed. Because of the broken sp2 bonds, these pores are known to possess magnetic states. We report on the magnetism and electronic structure of triangular pores as a function of their size. Moreover, in the Bernal-stacked h-BN (AB-h-BN), multilayer pores with parallel edges can be created, which is not possible in the commonly fabricated multilayer AA'-h-BN. Given that these pores can be manufactured in a well-controlled fashion using an electron beam, it is important to understand the interactions of pores in neighboring layers. We find that in certain configurations, the edges of the neighboring pores remain open and retain their magnetism, and in others, they form interlayer bonds. We present a comprehensive report on these configurations for small nanopores. We find that at low temperatures, these pores have near degenerate magnetic configurations, and may be utilized in magnetoresistance and spintronics applications. In the process of forming larger multilayer nanopores, interlayer bonds can form, reducing the magnetization. Yet, unbonded parallel multilayer edges remain available at all sizes. Understanding these pores is also helpful in a multitude of applications such as DNA sequencing and quantum emission.
Collapse
Affiliation(s)
- Mehmet Dogan
- Department of Physics, University of California, Berkeley, California 94720, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Marvin L Cohen
- Department of Physics, University of California, Berkeley, California 94720, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| |
Collapse
|
14
|
Gao H, Müser MH. Structural lubricity of physisorbed gold clusters on graphite and its breakdown: Role of boundary conditions and contact lines. Front Chem 2022; 10:935008. [PMID: 36118319 PMCID: PMC9470919 DOI: 10.3389/fchem.2022.935008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Accepted: 08/08/2022] [Indexed: 11/19/2022] Open
Abstract
The sliding motion of gold slabs adsorbed on a graphite substrate is simulated using molecular dynamics. The central quantity of interest is the mean lateral force, that is, the kinetic friction rather than the maximum lateral forces, which correlates with the static friction. For most setups, we find Stokesian damping to resist sliding. However, velocity-insensitive (Coulomb) friction is observed for finite-width slabs sliding parallel to the armchair direction if the bottom-most layer of the three graphite layers is kept at zero stress rather than at zero displacement. Although the resulting kinetic friction remains much below the noise produced by the erratic fluctuations of (conservative) forces typical for structurally lubric contacts, the nature of the instabilities leading to Coulomb friction could be characterized as quasi-discontinuous dynamics of the Moiré patterns formed by the normal displacements near a propagating contact line. It appears that the interaction of graphite with the second gold layer is responsible for the symmetry break occurring at the interface when a contact line moves parallel to the armchair rather than to the zigzag direction.
Collapse
|
15
|
Oz A, Dutta D, Nitzan A, Hod O, Koren E. Edge State Quantum Interference in Twisted Graphitic Interfaces. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2102261. [PMID: 35285174 PMCID: PMC9108635 DOI: 10.1002/advs.202102261] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Revised: 12/30/2021] [Indexed: 06/14/2023]
Abstract
Zigzag edges in graphitic systems exhibit localized electronic states that drastically affect their properties. Here, room-temperature charge transport experiments across a single graphitic interface are reported, in which the interlayer current is confined to the contact edges. It is shown that the current exhibits pronounced oscillations of up to ≈40 µA with a dominant period of ≈5 Å with respect to lateral displacement that do not directly correspond to typical graphene lattice spacing. The origin of these features is computationally rationalized as quantum mechanical interference of localized edge states showing significant amplitude and interlayer coupling variations as a function of the interface stacking configuration. Such interference effects may therefore dominate the transport properties of low-dimensional graphitic interfaces.
Collapse
Affiliation(s)
- Annabelle Oz
- Department of Physical ChemistrySchool of ChemistryThe Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials ScienceTel Aviv UniversityTel Aviv6997801Israel
| | - Debopriya Dutta
- Faculty of Materials Science and Engineering and the Russell Berrie Nanotechnology InstituteTechnion – Israel Institute of TechnologyHaifa3200003Israel
| | - Abraham Nitzan
- Department of Physical ChemistrySchool of ChemistryThe Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials ScienceTel Aviv UniversityTel Aviv6997801Israel
- Department of ChemistryUniversity of PennsylvaniaPhiladelphiaPA19103USA
| | - Oded Hod
- Department of Physical ChemistrySchool of ChemistryThe Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials ScienceTel Aviv UniversityTel Aviv6997801Israel
| | - Elad Koren
- Faculty of Materials Science and Engineering and the Russell Berrie Nanotechnology InstituteTechnion – Israel Institute of TechnologyHaifa3200003Israel
- The Nancy and Stephen Grand Technion Energy ProgramTechnion – Israel Institute of TechnologyHaifa3200003Israel
| |
Collapse
|
16
|
Cao W, Hod O, Urbakh M. Interlayer Registry Index of Layered Transition Metal Dichalcogenides. J Phys Chem Lett 2022; 13:3353-3359. [PMID: 35394797 PMCID: PMC9140326 DOI: 10.1021/acs.jpclett.1c04202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 04/04/2022] [Indexed: 06/14/2023]
Abstract
Inspired by the fascinating electronic properties of twisted transition metal dichalcogenides, we extend the registry index approach to quantify the interlayer commensurability of homogeneous and heterogeneous interfaces of MoS2, WS2, MoSe2, and WSe2. The developed geometric measure provides quantitative information about their sliding energy landscape with vast mechanical and tribological implications. Furthermore, the registry index is highly suitable for characterizing surface reconstruction in twisted transition metal dichalcogenide interfaces that dictates their intricate electronic and ferroelectric properties. The simple and intuitive nature of the registry index marks it as a powerful computational tool for studying the fascinating physical phenomena demonstrated by these materials.
Collapse
|
17
|
Sun J, Zhang L, Pang R, Zhao X, Cheng J, Zhang Y, Xue X, Ren X, Zhu W, Li S, Zhang Z. Negative Differential Friction Predicted in 2D Ferroelectric In 2 Se 3 Commensurate Contacts. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103443. [PMID: 34761558 PMCID: PMC8805561 DOI: 10.1002/advs.202103443] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Revised: 10/07/2021] [Indexed: 06/13/2023]
Abstract
At the macroscopic scale, the friction force (f) is found to increase with the normal load (N), according to the classic law of Da Vinci-Amontons, namely, f = µN, with a positive definite friction coefficient (μ). Here, first-principles calculations are employed to predict that, the static force f, measured by the corrugation in the sliding potential energy barrier, is lowered upon increasing the normal load applied on one layer of the recently discovered ferroelectric In2 Se3 over another commensurate layer of In2 Se3 . That is, a negative differential friction coefficient μ can be realized, which thus simultaneously breaking the classic Da Vinci-Amontons law. Such a striking and counterintuitive observation can be rationalized by the delicate interplay of the interfacial van der Waals repulsive interactions and the electrostatic energy reduction due to the enhancement of the intralayer SeIn ionic bonding via charge redistribution under load. The present findings are expected to play an instrumental role in design of high-performance solid lubricants and mechanical-electronic nanodevices.
Collapse
Affiliation(s)
- Jingge Sun
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Lili Zhang
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Rui Pang
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Xing‐Ju Zhao
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Jiangtao Cheng
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Yimin Zhang
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Xinlian Xue
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Xiaoyan Ren
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Wenguang Zhu
- Key Laboratory of Strongly‐Coupled Quantum Matter PhysicsChinese Academy of SciencesSchool of Physical SciencesUniversity of Science and Technology of ChinaHefeiAnhui230026China
- International Center for Quantum Design of Functional Materials (ICQD)Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Shunfang Li
- Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450001China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD)Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefeiAnhui230026China
| |
Collapse
|
18
|
Ruan Q, Wang L, Bets KV, Yakobson BI. Step-Edge Epitaxy for Borophene Growth on Insulators. ACS NANO 2021; 15:18347-18353. [PMID: 34766759 DOI: 10.1021/acsnano.1c07589] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Borophene─a monatomic layer of boron atoms─stands out among two-dimensional (2D) materials, with its versatile properties tantalizing for physics exploration and next-generation devices. Yet its phases are all synthesized on and stay bound to metal substrates, hampering both characterization and use. Borophene growth on an inert insulator would allow postsynthesis exfoliation, but the weak adhesion to such a substrate results in a high 2D nucleation barrier, preventing clean borophene growth. This challenge can be circumvented in a strategy devised and demonstrated here with ab initio calculations. Naturally present 1D-defects, the step-edges on an h-BN substrate surface, enable boron epitaxial assembly, reduce the nucleation dimensionality, and lower the barrier by an order of magnitude (to 1.1 eV or less), yielding a v1/9 phase. Weak borophene adhesion to the insulator makes it readily accessible for comprehensive property tests or transfer into the device setting.
Collapse
Affiliation(s)
- Qiyuan Ruan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Luqing Wang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Ksenia V Bets
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
| |
Collapse
|
19
|
Hess P. Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table. NANOSCALE HORIZONS 2021; 6:856-892. [PMID: 34494064 DOI: 10.1039/d1nh00113b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.
Collapse
Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, INF 253, University of Heidelberg, 69120 Heidelberg, Germany.
| |
Collapse
|
20
|
Moayedpour S, Dardzinski D, Yang S, Hwang A, Marom N. Structure prediction of epitaxial inorganic interfaces by lattice and surface matching with Ogre. J Chem Phys 2021; 155:034111. [PMID: 34293896 DOI: 10.1063/5.0051343] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/02/2023] Open
Abstract
We present a new version of the Ogre open source Python package with the capability to perform structure prediction of epitaxial inorganic interfaces by lattice and surface matching. In the lattice matching step, a scan over combinations of substrate and film Miller indices is performed to identify the domain-matched interfaces with the lowest mismatch. Subsequently, surface matching is conducted by Bayesian optimization to find the optimal interfacial distance and in-plane registry between the substrate and the film. For the objective function, a geometric score function is proposed based on the overlap and empty space between atomic spheres at the interface. The score function reproduces the results of density functional theory (DFT) at a fraction of the computational cost. The optimized interfaces are pre-ranked using a score function based on the similarity of the atomic environment at the interface to the bulk environment. Final ranking of the top candidate structures is performed with DFT. Ogre streamlines DFT calculations of interface energies and electronic properties by automating the construction of interface models. The application of Ogre is demonstrated for two interfaces of interest for quantum computing and spintronics, Al/InAs and Fe/InSb.
Collapse
Affiliation(s)
- Saeed Moayedpour
- Department of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
| | - Derek Dardzinski
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
| | - Shuyang Yang
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
| | - Andrea Hwang
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
| | - Noa Marom
- Department of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
| |
Collapse
|
21
|
Vizner Stern M, Waschitz Y, Cao W, Nevo I, Watanabe K, Taniguchi T, Sela E, Urbakh M, Hod O, Ben Shalom M. Interfacial ferroelectricity by van der Waals sliding. Science 2021; 372:eabe8177. [PMID: 34112727 DOI: 10.1126/science.abe8177] [Citation(s) in RCA: 147] [Impact Index Per Article: 49.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2020] [Accepted: 05/10/2021] [Indexed: 12/14/2022]
Abstract
Despite their partial ionic nature, many layered diatomic crystals avoid internal electric polarization by forming a centrosymmetric lattice at their optimal van-der-Waals stacking. Here, we report a stable ferroelectric order emerging at the interface between two naturally-grown flakes of hexagonal-boron-nitride, which are stacked together in a metastable non-centrosymmetric parallel orientation. We observe alternating domains of inverted normal polarization, caused by a lateral shift of one lattice site between the domains. Reversible polarization switching coupled to lateral sliding is achieved by scanning a biased tip above the surface. Our calculations trace the origin of the phenomenon to a subtle interplay between charge redistribution and ionic displacement, and provide intuitive insights to explore the interfacial polarization and its unique "slidetronics" switching mechanism.
Collapse
Affiliation(s)
- M Vizner Stern
- School of Physics and Astronomy, Tel Aviv University, Israel
| | - Y Waschitz
- School of Physics and Astronomy, Tel Aviv University, Israel
| | - W Cao
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - I Nevo
- School of Physics and Astronomy, Tel Aviv University, Israel
| | - K Watanabe
- National Institute for Material Science, Tsukuba, Japan
| | - T Taniguchi
- National Institute for Material Science, Tsukuba, Japan
| | - E Sela
- School of Physics and Astronomy, Tel Aviv University, Israel
| | - M Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - O Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - M Ben Shalom
- School of Physics and Astronomy, Tel Aviv University, Israel.
| |
Collapse
|
22
|
Zhao X, Qiao J, Chan SM, Li J, Dan J, Ning S, Zhou W, Quek SY, Pennycook SJ, Loh KP. Unveiling Atomic-Scale Moiré Features and Atomic Reconstructions in High-Angle Commensurately Twisted Transition Metal Dichalcogenide Homobilayers. NANO LETTERS 2021; 21:3262-3270. [PMID: 33749268 DOI: 10.1021/acs.nanolett.1c00563] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Twisting the angle between van der Waals stacked 2D layers has recently sparked great interest as a new strategy to tune the physical properties of the materials. The twist angle and associated strain profiles govern the electrical and optical properties of the twisted 2D materials, but their detailed atomic structures remain elusive. Herein, using combined atomic-resolution electron microscopy and density functional theory (DFT) calculations, we identified five unique types of moiré features in commensurately twisted 7a×7a transition metal dichalcogenide (TMD) bilayers. These stacking variants are distinguishable only when the moiré wavelength is short. Periodic lattice strain is observed in various commensurately twisted TMD bilayers. Assisted by Zernike polynomial as a hierarchical active-learning framework, a hexagon-shaped strain soliton network has been atomically unveiled in nearly commensurate twisted TMD bilayers. Unlike stacking-polytype-dependent properties in untwisted structures, the stacking variants have the same electronic structures that suggest twisted bilayer systems are invariant against interlayer gliding.
Collapse
Affiliation(s)
- Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
- Department of Chemistry, National University of Singapore, 3 Science Drive 3 117543, Singapore
| | - Jingsi Qiao
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Si Min Chan
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Jing Li
- Department of Chemistry, National University of Singapore, 3 Science Drive 3 117543, Singapore
| | - Jiadong Dan
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
| | - Shoucong Ning
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Su Ying Quek
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Stephen John Pennycook
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3 117543, Singapore
| |
Collapse
|
23
|
Cigarini L, Novotný M, Karlický F. Lattice dynamics in the conformational environment of multilayered hexagonal boron nitride (h-BN) results in peculiar infrared optical responses. Phys Chem Chem Phys 2021; 23:7247-7260. [PMID: 33876085 DOI: 10.1039/d0cp06188c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
Stacking mismatches in hexagonal boron nitride (h-BN) nanostructures affect their photonic, mechanical, and thermal properties. To access information about the stacked configuration of layered ensembles, highly sophisticated techniques like X-ray photoemission spectroscopy or electron microscopy are necessary. Here, instead, by taking advantage of the geometrical and chemical nature of h-BN, we show how simple structural models, based on shortened interplanar distances, can produce effective charge densities. Accounting these in the non-analytical part of the lattice dynamical description makes it possible to access information about the composition of differently stacked variants in experimental samples characterized by infrared spectroscopy. The results are obtained by density functional theory and confirmed by various functionals and pseudopotential approximations. Even though the method is shown using h-BN, the conclusions are more general and show how effective dielectric models can be considered as valuable theoretical pathways for the vibrational structure of any layered material.
Collapse
Affiliation(s)
- Luigi Cigarini
- Department of Physics, Faculty of Science, University of Ostrava, 701 03 Ostrava, Czech Republic.
| | | | | |
Collapse
|
24
|
Krüger P, Maekawa Y, Hitchcock A, Bittencourt C. Polarization dependent X-ray absorption near-edge spectra of boron nitride nanotubes. Radiat Phys Chem Oxf Engl 1993 2020. [DOI: 10.1016/j.radphyschem.2019.01.014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
|
25
|
Influence of the second layer on geometry and spectral properties of doped two-dimensional hexagonal boron nitride. J Mol Model 2020; 26:216. [PMID: 32719904 PMCID: PMC7384999 DOI: 10.1007/s00894-020-04456-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2020] [Accepted: 06/21/2020] [Indexed: 11/08/2022]
Abstract
Influence of the additional layer of hexagonal boron nitride (h-BN) on structure, energetics, and electronic spectra of a layer doped with magnesium, silicon, phosphorus, aluminum, or carbon atoms has been examined by theoretical methods. The h-BN layers are modeled as BN clusters of over thirty atoms with the defect in the center. The calculations show that atom positions undergo some modifications in the presence of the second layer, which in several cases lead to significant changes in electronic spectra, like (i) modifications of the character of some states from local excitation to a partial charge transfer; (ii) redshift of the majority of lowest excitations; (iii) absence or appearance of new states in comparison with the monolayers. For instance, a zero-intensity excitation below 4 eV for the carbon atom in place of boron transforms into a dipole-allowed one in the presence of the second layer. A comparison of the interaction energies of doped and undoped clusters shows a strong dependence of the stabilizing of destabilizing effect on the dopant atom, the replaced atom, and in some cases also on the stacking type (AA’ or AB). The stabilization energy per BN pair, calculated for two undoped clusters, is equal to − 31 and − 28 meV for the AA’ and AB stacking, respectively, thus confirming a larger stability of the AA’ stacking for the h-BN case.
Collapse
|
26
|
Cheng Z, Sun J, Zhang B, Lu Z, Ma F, Zhang G, Xue Q. Strain Effects of Vertical Separation and Horizontal Sliding in Commensurate Two-Dimensional Homojunctions. J Phys Chem Lett 2020; 11:5815-5822. [PMID: 32614591 DOI: 10.1021/acs.jpclett.0c01713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Strain, as an economic yet controllable approach for structural modulation, frequently plays a vital role in the preparation and performance optimization of two-dimensional nanomaterials (TNMs). Here, utilizing first-principles simulations, the analysis of energetics shows that the biaxial stretching and compressing could facilitate the vertical separation and horizontal sliding in graphene (Gr/Gr), hexagonal boron nitride (h-BN/h-BN), and molybdenum disulfide (MoS2/MoS2) bilayers. The quantification of electron redistribution between layers confirmed that the shifts of interlayer charge density (ρinter-) and its relative values (Δρinter-) are responsible for the vertical separation and horizontal sliding facilitated by biaxial strain. More effortless horizontal sliding was enabled by a smoother potential energy surface because a smaller Δρinter- can be acquired under compression, whereas more effortless vertical separation followed a more vulnerable surface energy because a lower ρinter- occurs under tensile strain. The vertical and horizontal division of strain effect provides a novel idea for further understanding its pivotal roles in strain engineering of commensurate-contact TNMs, such as mechanical exfoliation and solid lubrication.
Collapse
Affiliation(s)
- Ziwen Cheng
- Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Junhui Sun
- Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- School of Mechanical Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, China
| | - Bozhao Zhang
- Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Zhibin Lu
- Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fei Ma
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Guangan Zhang
- Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qunji Xue
- Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| |
Collapse
|
27
|
Sun AA, Gao SP, Gu G. Peculiar bond characters of fivefold coordinated octet compound crystals. Chem Sci 2020; 11:4340-4350. [PMID: 34122892 PMCID: PMC8152722 DOI: 10.1039/d0sc00292e] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2020] [Accepted: 03/26/2020] [Indexed: 11/22/2022] Open
Abstract
The present work exemplifies complementary perspectives offered by the band and bond pictures of solids, with an emphasis on the chemical intuition pertaining to the latter, especially in the presence of interfaces. The modern computational method of constructing a unique set of maximally localized Wannier functions from delocalized band states imparts new interpretations to the familiar concept of chemical bonds in the context of crystalline solids. By bridging the band and bond pictures using advanced computational tools, we reveal for the first time the unusual bond characters of a long-predicted fivefold coordinated structure of binary octet compounds A N B8-N consisting of AA' stacked planar AB honeycombs. While the isolated monolayer retains the familiar p z -π bonding in a honeycomb framework as in graphene and hexagonal boron nitride, the bulk foregoes in-plane π bonding and embraces out-of-plane ⋯A-B-A-B⋯ chain bonding via overlapping p z orbitals. Not only does the chemical intuition gained by invoking the bond picture clarify the chemical nature of the fivefold coordination, but it also facilely explains a salient discrepancy in theoretical predictions in otherwise sound ample experimental evidence in the form of epitaxial thin films, paving the way towards rational synthesis of such thin films for optoelectronic applications. On the other hand, we show that the conduction band minimum, important in determining the electrical and optical properties, is a distinctly extended state that can only be properly described within the band picture.
Collapse
Affiliation(s)
- An-An Sun
- Department of Materials Science, Fudan University Shanghai 200433 China
| | - Shang-Peng Gao
- Department of Materials Science, Fudan University Shanghai 200433 China
| | - Gong Gu
- Min H. Kao Department of Electrical Engineering and Computer Science, University of Tennessee Knoxville Tennessee 37996 USA
| |
Collapse
|
28
|
Hess P. Thickness of elemental and binary single atomic monolayers. NANOSCALE HORIZONS 2020; 5:385-399. [PMID: 32118242 DOI: 10.1039/c9nh00658c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The thickness of monolayers is a fundamental property of two-dimensional (2D) materials that has not found the necessary attention. It plays a crucial role in their mechanical behavior, the determination of related physical properties such as heat transfer, and especially the properties of multilayer systems. Measurements of the thickness of free-standing monolayers are widely lacking and notoriously too large. Consistent thicknesses have been reported for single layers of graphene, boronitrene, and SiC derived from interlayer spacing measured by X-ray diffraction in multilayer systems, first-principles calculations of the interlayer spacing, and tabulated van der Waals (vdW) diameters. Furthermore, the electron density-based volume model agrees with the geometric slab model for graphene and boronitrene. For other single-atom monolayers DFT calculations and molecular dynamics (MD) simulations deliver interlayer distances that are often much smaller than the vdW diameter, owing to further electrostatic and (weak) covalent interlayer interaction. Monolayers strongly bonded to a surface also show this effect. If only weak vdW forces exist, the vdW diameter delivers a reasonable thickness not only for free-standing monolayers but also for few-layer systems and adsorbed monolayers. Adding the usually known corrugation effect of buckled or puckered monolayers to the vdW diameter delivers an upper limit of the monolayer thickness. The study presents a reference database of thickness values for elemental and binary group-IV and group-V monolayers, as well as binary III-V and IV-VI compounds.
Collapse
Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-69120 Heidelberg, Germany.
| |
Collapse
|
29
|
Zhou JQ, Li L, Fu C, Wang J, Fu P, Kong CP, Bai FQ, Eglitis RI, Zhang HX, Jia R. A novel T-C 3N and seawater desalination. NANOSCALE 2020; 12:5055-5066. [PMID: 32068219 DOI: 10.1039/c9nr08108a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A structurally stable stacked multilayer carbonitride is predicted with the aid of ab initio calculations. This carbonitride consists of C3N tetrahedra, and is similar to T-carbon and thus named T-C3N. Its 2-dimensional (2D) monolayer is also carefully investigated in this work. The studies on electronic properties reveal that bulk and 2D T-C3N are insulators with a 5.542 eV indirect band gap and a 5.741 eV direct band gap, respectively. However, the monolayer T-C3N exhibits an excellent uniform porosity. Its 5.50 Å pore size is perfect for water nanofiltration. The adsorption and permeation of water molecules on the monolayer T-C3N are investigated. Its promising potential application in highly efficient nanofiltration membranes for seawater desalination is discussed.
Collapse
Affiliation(s)
- Jia-Qi Zhou
- Institute of Theoretical Chemistry, Jilin University, 130023 Changchun, PR China
| | - Lei Li
- Institute of Theoretical Chemistry, Jilin University, 130023 Changchun, PR China
| | - Cong Fu
- Key Laboratory of Organ Regeneration & Transplantation of the Ministry of Education, The First Hospital of Jilin University, 130061 Changchun, PR China. and National-Local Joint Engineering Laboratory of Animal Models for Human Diseases, 130061 Changchun, PR China
| | - Jian Wang
- Institute of Theoretical Chemistry, Jilin University, 130023 Changchun, PR China
| | - Peng Fu
- Institute of Theoretical Chemistry, Jilin University, 130023 Changchun, PR China and Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., Riga LV1067, Latvia
| | - Chui-Peng Kong
- Institute of Theoretical Chemistry, Jilin University, 130023 Changchun, PR China
| | - Fu-Quan Bai
- Institute of Theoretical Chemistry, Jilin University, 130023 Changchun, PR China
| | - Roberts I Eglitis
- Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., Riga LV1067, Latvia
| | - Hong-Xing Zhang
- Institute of Theoretical Chemistry, Jilin University, 130023 Changchun, PR China
| | - Ran Jia
- Institute of Theoretical Chemistry, Jilin University, 130023 Changchun, PR China and Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., Riga LV1067, Latvia
| |
Collapse
|
30
|
Brown PA, Fischer SA, Kołacz J, Spillmann C, Gunlycke D. Thermotropic liquid crystal (5CB) on two-dimensional materials. Phys Rev E 2020; 100:062701. [PMID: 31962509 DOI: 10.1103/physreve.100.062701] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2019] [Indexed: 11/07/2022]
Abstract
We present ground-state electronic properties of the liquid crystal 4-cyano-4^{'}-pentylbiphenyl (5CB) on the two-dimensional materials monolayer graphene, hexagonal boron nitride, and phosphorene. Our density functional theory results show that the physisorption is robust on all surfaces with the strongest binding of 5CB on phosphorene. All surfaces exhibit flexural distortion, especially monolayer graphene and hexagonal boron nitride. While we find type-I alignment for all three substrates, meaning the Fermi level of the system is in the HOMO-LUMO gap of 5CB, the band structures are qualitatively different. Unlike for graphene and phosphorene, the HOMO-LUMO of 5CB appear as localized states within the band gap of boron nitride. In addition, we find that the valence band for boron nitride is sensitive to the orientation of 5CB relative to the surface. The qualitatively different band structures demonstrate the importance of substrate selection for tailoring the electronic and optoelectronic properties of nematic liquid crystals on two-dimensional materials.
Collapse
Affiliation(s)
- Paul A Brown
- ASEE Post-Doctoral Fellow at the U.S. Naval Research Laboratory, Washington, DC 20375, USA
| | - Sean A Fischer
- U.S. Naval Research Laboratory, Washington, DC 20375, USA
| | - Jakub Kołacz
- U.S. Naval Research Laboratory, Washington, DC 20375, USA
| | | | | |
Collapse
|
31
|
Ouyang W, Azuri I, Mandelli D, Tkatchenko A, Kronik L, Urbakh M, Hod O. Mechanical and Tribological Properties of Layered Materials under High Pressure: Assessing the Importance of Many-Body Dispersion Effects. J Chem Theory Comput 2019; 16:666-676. [DOI: 10.1021/acs.jctc.9b00908] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Wengen Ouyang
- School of Chemistry and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Ido Azuri
- Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100, Israel
| | - Davide Mandelli
- Istituto Italiano di Tecnologia, Via Morego, 30, 16163 Genova, Italy
| | - Alexandre Tkatchenko
- Department of Physics and Materials Science, University of Luxembourg, L-1511 Luxembourg, Luxembourg
| | - Leeor Kronik
- Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100, Israel
| | - Michael Urbakh
- School of Chemistry and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Oded Hod
- School of Chemistry and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| |
Collapse
|
32
|
Li LL, Feng S. Influence of neighboring layers on interfacial energy of adjacent layers. CHINESE J CHEM PHYS 2019. [DOI: 10.1063/1674-0068/cjcp1812291] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
Affiliation(s)
- Lei-lei Li
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, China
| | - Shuo Feng
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, CAS Center for Excellence in Nanoscience, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China
| |
Collapse
|
33
|
Khajeh A, Chen Z, Kim SH, Martini A. Effect of Ambient Chemistry on Friction at the Basal Plane of Graphite. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40800-40807. [PMID: 31578847 DOI: 10.1021/acsami.9b13261] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Graphite is widely used as a solid lubricant due to its layered structure, which enables ultralow friction. However, the lubricity of graphite is affected by ambient conditions and previous studies have shown a sharp contrast between frictional behavior in vacuum or dry environments compared to humid air. Here, we studied the effect of organic gaseous species in the environment, specifically comparing the adsorption of phenol and pentanol vapor. Atomic force microscopy experiments and reactive molecular dynamics simulations showed that friction was larger with phenol than with pentanol. The simulation results were analyzed to test multiple hypotheses to explain the friction difference, and it was found that mechanically driven chemical bonding between the tip and phenol molecules plays a critical role. Bonding increases the number of phenol molecules in the contact, which increases the adhesion as well as the number of atoms in registry with the topmost graphene layer acting as a pinning site to resist sliding. The findings of this research provide insight into how the chemistry of the operating environment can affect the frictional behavior of graphite and layered materials more generally.
Collapse
Affiliation(s)
- Arash Khajeh
- Department of Mechanical Engineering , University of California Merced , 5200 N. Lake Road , Merced , California 95343 , United States
| | - Zhe Chen
- Department of Chemical Engineering and Materials Research Institute , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Seong H Kim
- Department of Chemical Engineering and Materials Research Institute , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Ashlie Martini
- Department of Mechanical Engineering , University of California Merced , 5200 N. Lake Road , Merced , California 95343 , United States
| |
Collapse
|
34
|
An Y, Kuc A, Petkov P, Lozada-Hidalgo M, Heine T. On the Chemistry and Diffusion of Hydrogen in the Interstitial Space of Layered Crystals h-BN, MoS 2 , and Graphite. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901722. [PMID: 31489977 DOI: 10.1002/smll.201901722] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2019] [Revised: 08/15/2019] [Indexed: 06/10/2023]
Abstract
Recent experiments have demonstrated transport and separation of hydrogen isotopes through the van der Waals gap in hexagonal boron nitride and molybdenum disulfide bulk layered materials. However, the experiments cannot distinguish if the transported particles are protons (H+ ) or protium (H) atoms. Here, reported are the theoretical studies, which indicate that protium atoms, rather than protons, are transported through the gap. First-principles calculations combined with well-tempered metadynamics simulations at finite temperature reveal that for h-BN and MoS2 , the diffusion mechanism of both protons and protium (H) atoms involves a hopping process between adjacent layers. This process is assisted by low-energy phonon shear modes. The extracted diffusion coefficient of protium matches the experiment, while for protons it is several orders of magnitude smaller. This indicates that protium atoms are responsible for the experimental observations. These results allow for a comprehensive interpretation of experimental results on the transport of hydrogen isotopes through van der Waals gaps and can help identify other materials for hydrogen isotope separation applications.
Collapse
Affiliation(s)
- Yun An
- Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstr. 2, 04103, Leipzig, Germany
| | - Agnieszka Kuc
- Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstr. 2, 04103, Leipzig, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Abteilung Ressourcenökologie, Forschungsstelle Leipzig, Permoserstr. 15, 04318, Leipzig, Germany
- Department of Physics & Earth Sciences, Jacobs University Bremen gGmbH, Campus Ring 1, 28759, Bremen, Germany
| | - Petko Petkov
- Faculty of Chemistry and Pharmacy, University of Sofia, 1 James Bourchier blvd., 1164, Sofia, Bulgaria
| | - Marcelo Lozada-Hidalgo
- Department of Physics and Astronomy, University of Manchester, Oxford Rd, M13 9PL, Manchester, UK
| | - Thomas Heine
- Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstr. 2, 04103, Leipzig, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Abteilung Ressourcenökologie, Forschungsstelle Leipzig, Permoserstr. 15, 04318, Leipzig, Germany
- School of Science, Chair of Theoretical Chemistry, TU Dresden, Bergstr. 66c, 01062, Dresden, Germany
| |
Collapse
|
35
|
Li L, Yang L, Wang X, Ni Y, Jiang J, Zhang G. Immobilizing copper-supported graphene with surface hydrogenation or hydroxylation: A first-principle study. Chem Phys 2019. [DOI: 10.1016/j.chemphys.2019.04.019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
|
36
|
Effect of Triblock Copolymer on Carbon-Based Boron Nitride Whiskers for Efficient CO 2 Adsorption. Polymers (Basel) 2019; 11:polym11050913. [PMID: 31117248 PMCID: PMC6572571 DOI: 10.3390/polym11050913] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2019] [Revised: 05/16/2019] [Accepted: 05/19/2019] [Indexed: 02/02/2023] Open
Abstract
Herein, we investigated novel carbon-containing P123 copolymer-activated boron nitride whiskers (P123-CBNW) fabricated via a structure directing approach followed by a single-step heat treatment under N2. The resulting materials were found to be highly micro- and mesoporous. The influence of the activating agent (P123 copolymer) on the CO2 adsorption efficiency was determined. The prepared samples possessed high specific surface areas (594–1732 m2/g) and micropore volumes (0.258–0.672 cm3/g). The maximum CO2 uptakes of the prepared adsorbents were in the range 136–308 mg/g (3.09–7.01 mmol/g) at 273 K and 1 bar and 97–114 mg/g (2.22–4.62 mmol/g) in the following order: CBNW < P123-CBNW3 < P123-CBNW2 < P123-CBNW1 < P123-CBNW0.5. The isosteric heat of adsorption values (∆Qst) were found to be 33.7–43.7 kJ/mol, demonstrating the physisorption nature of the CO2 adsorption. Extensive analysis revealed that the presence of carbon, the high specific surface area, the high microporosity, and the chemical structural defects within the adsorbents are responsible for raising the CO2 adsorption ability and the selectivity over N2 gas. The fabricated adsorbents show excellent regeneration ability after several repeated adsorption cycles, making the prepared adsorbents promising candidates for gas storage applications.
Collapse
|
37
|
Arcelus O, Carrasco J. Atomistic Insight into Glide-Driven Phase Transformations in Layered Oxides for Sodium-Ion Batteries: A Case Study on Na xVO 2. ACS APPLIED MATERIALS & INTERFACES 2019; 11:12562-12569. [PMID: 30860350 DOI: 10.1021/acsami.9b01484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Among high-capacity, low-cost cathode contenders for Na-ion batteries, layered transition-metal oxides are particularly promising materials. Yet there is a strong need to improve their long-term stability and capacity retention due to unwanted phase transitions occurring during sodium insertion and extraction cycles. Here, using density functional theory calculations and thoroughly examining P ↔ O transitions in Na xVO2 as a case study, we provide atomic-level understanding into the glide-driven processes in these compounds. In particular, we rationalize the commonly observed effect of high Na contents on preventing gliding processes at low states of charge. And we identify the beneficial impact of Na ions at face-shared prismatic sites in P-type phases to specifically hinder P → O transitions. We put forward that the gained new insights can help to focus and guide the current research efforts to design layered transition-metal oxides with enhanced long-term stability for practical applications.
Collapse
Affiliation(s)
- Oier Arcelus
- CIC EnergiGUNE, Parque Tecnológico de Álava , Albert Einstein 48 , 01510 Miñano , Álava , Spain
| | - Javier Carrasco
- CIC EnergiGUNE, Parque Tecnológico de Álava , Albert Einstein 48 , 01510 Miñano , Álava , Spain
| |
Collapse
|
38
|
Tsuji Y, Kitamura Y, Someya M, Takano T, Yaginuma M, Nakanishi K, Yoshizawa K. Adhesion of Epoxy Resin with Hexagonal Boron Nitride and Graphite. ACS OMEGA 2019; 4:4491-4504. [PMID: 31459644 PMCID: PMC6648480 DOI: 10.1021/acsomega.9b00129] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2019] [Accepted: 02/11/2019] [Indexed: 05/14/2023]
Abstract
Adhesion interaction of epoxy resin with the basal surfaces of h-BN and graphite is investigated with the first-principles density functional theory calculations in conjunction with the dispersion correction. The h-BN/epoxy and graphite/epoxy interfaces play an important role in producing nanocomposite materials with excellent thermal dissipation properties. The epoxy resin structure is simulated by using four kinds of fragmentary models. Their structures are optimized on the h-BN and graphite surfaces after an annealing simulation. The distance between the epoxy fragment and the surface is about 3 Å. At the interface between h-BN and epoxy resin, no H-bonding formation is observed, though one could expect that the active functional groups of epoxy resin, such as hydroxyl (-OH) group, would be involved in a hydrogen-bonding interaction with nitrogen atoms of the h-BN surface. The adhesion energies for the two interfaces are calculated, showing that these two interfaces are characterized by almost the same strength of adhesion interaction. To obtain the adhesion force-separation curve for the two interfaces, the potential energy surface associated with the detachment of the epoxy fragment from the surface is calculated with the help of the nudged elastic band method and then the adhesion force is obtained by using either the Morse-potential approximation or the Hellmann-Feynman force calculation. The results from both methods agree with each other. The maximum adhesion force for the h-BN/epoxy interface is as high as that for the graphite/epoxy interface. To better understand this result, a force-decomposition analysis is carried out, and it has been disclosed that the adhesion forces working at both interfaces mainly come from the dispersion force. The trend of increase in the C 6 parameters used for the dispersion correction for the atoms included in the h-BN or graphite surface is in the order: N < C < B, which reasonably explains why the strengths of the dispersion forces operating at the two interfaces are similar. Also, the electron localization function analysis can explain why the h-BN surface cannot form an H bond with the hydroxyl group in epoxy resin.
Collapse
Affiliation(s)
- Yuta Tsuji
- Institute
for Materials Chemistry and Engineering and IRCCS, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan
| | - Yasuhiro Kitamura
- Institute
for Materials Chemistry and Engineering and IRCCS, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan
| | - Masao Someya
- Mitsubishi
Gas Chemical Company Inc., Chiyoda-ku, Tokyo 100-8324, Japan
| | - Toshihiko Takano
- Mitsubishi
Gas Chemical Company Inc., Chiyoda-ku, Tokyo 100-8324, Japan
| | - Michio Yaginuma
- Mitsubishi
Gas Chemical Company Inc., Chiyoda-ku, Tokyo 100-8324, Japan
| | - Kohei Nakanishi
- Mitsubishi
Gas Chemical Company Inc., Chiyoda-ku, Tokyo 100-8324, Japan
| | - Kazunari Yoshizawa
- Institute
for Materials Chemistry and Engineering and IRCCS, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan
| |
Collapse
|
39
|
Qi L, Han J, Gao W, Jiang Q. Monolayer tellurenyne assembled with helical telluryne: structure and transport properties. NANOSCALE 2019; 11:4053-4060. [PMID: 30775772 DOI: 10.1039/c9nr00596j] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) crystals are candidate materials for electronics and spintronics, but their deficient carrier mobility, inappreciable spin-orbit coupling effect, and environmental instability have such limited applications. Herein, using density functional theory methods, we propose a novel 2D monolayer material, named tellurenyne, built with an atomic tellurium chain (named telluryne) via a noncovalent bond. The comparable electrostatic and van der Waals contributions to interchain binding enable tellurenyne to exhibit remarkable stabilities and transport properties. The carrier mobility of tellurenyne is even higher than phosphorene, with the largest anisotropy among all known systems. Importantly, by changing the phase orders of one-dimensional telluryne, one can switch the preferred carrier type and rotate the dominant direction of carrier transport by 90°. Additionally, tellurenyne is found to exhibit Rashba spin splitting with the coupling parameter of 2.13 eV Å, belonging to the giant Rashba systems. Therefore, this novel 2D material, tellurenyne, is promising for applications in electronics and spintronics.
Collapse
Affiliation(s)
- Liujian Qi
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
| | - Jie Han
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
| | - Wang Gao
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
| | - Qing Jiang
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
| |
Collapse
|
40
|
Kolos M, Karlický F. Accurate many-body calculation of electronic and optical band gap of bulk hexagonal boron nitride. Phys Chem Chem Phys 2019; 21:3999-4005. [DOI: 10.1039/c8cp07328g] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Benchmark values of quasiparticle and optical gap of bulk h-BN are provided and compared to selected approximative methods.
Collapse
Affiliation(s)
- Miroslav Kolos
- Department of Physics
- Faculty of Science
- University of Ostrava
- 701 03 Ostrava
- Czech Republic
| | - František Karlický
- Department of Physics
- Faculty of Science
- University of Ostrava
- 701 03 Ostrava
- Czech Republic
| |
Collapse
|
41
|
Sivadas N, Okamoto S, Xu X, Fennie CJ, Xiao D. Stacking-Dependent Magnetism in Bilayer CrI 3. NANO LETTERS 2018; 18:7658-7664. [PMID: 30408960 DOI: 10.1021/acs.nanolett.8b03321] [Citation(s) in RCA: 154] [Impact Index Per Article: 25.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report the connection between the stacking order and magnetic properties of bilayer CrI3 using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order, one can tune the interlayer exchange interaction between antiferromagnetic and ferromagnetic. To measure the predicted stacking-dependent magnetism, we propose using linear magnetoelectric effect. Our results not only gives a possible explanation for the observed antiferromagnetism in bilayer CrI3 but also have direct implications in heterostructures made of two-dimensional magnets.
Collapse
Affiliation(s)
- Nikhil Sivadas
- School of Applied and Engineering Physics , Cornell University , Ithaca , New York 14853 , United States
| | - Satoshi Okamoto
- Materials Science and Technology Division , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Xiaodong Xu
- Department of Physics , University of Washington , Seattle , Washington 98195 , United States
- Department of Materials Science and Engineering , University of Washington , Seattle , Washington 98195 , United States
| | - Craig J Fennie
- School of Applied and Engineering Physics , Cornell University , Ithaca , New York 14853 , United States
| | - Di Xiao
- Department of Physics , Carnegie Mellon University , Pittsburgh , Pennsylvania 15213 , United States
| |
Collapse
|
42
|
Tweedie MEP, Sheng Y, Sarwat SG, Xu W, Bhaskaran H, Warner JH. Inhomogeneous Strain Release during Bending of WS 2 on Flexible Substrates. ACS APPLIED MATERIALS & INTERFACES 2018; 10:39177-39186. [PMID: 30383356 DOI: 10.1021/acsami.8b12707] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional (2D) materials hold great promise in flexible electronics, but the weak van der Waals interlayer bonding may pose a problem during bending, where easy interlayer sliding can occur. Furthermore, thin films of rigid materials are often observed to delaminate from soft substrates during straining. Here, we study the influence of substrate strain on some of the heterostructure configurations we expect to find in devices, composed of three common 2D materials: graphene, tungsten disulfide, and boron nitride. We used photoluminescence (PL) spectroscopy to measure changes in the heterostructures with strain applied in situ. All heterostructures were fabricated directly on polymer substrates, using materials synthesized by chemical vapor deposition. We observed an inhomogeneous release of strain in all structures, leading to a nonrecoverable broadening of the PL peak and shift of the bandgap. This suggests the need for preconditioning devices before service to ensure stable behavior. A gradual time-dependent relaxation of strain between strain cycles was characterized using time-dependent measurements-an effect which could lead to drift of device behavior during operation. Furthermore, possible degradation was assessed by performing the strain and relax the cycle up to 200 times, where we found little further change after the initial shifts had stabilized. These results have important ramifications for devices fabricated from these and other 2D materials, as they suggest extra processing steps and considerations that must be taken to achieve consistent and stable properties.
Collapse
Affiliation(s)
- Martin E P Tweedie
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yuewen Sheng
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Syed Ghazi Sarwat
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Wenshuo Xu
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Harish Bhaskaran
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Jamie H Warner
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| |
Collapse
|
43
|
Yun J, Zhang Y, Ren Y, Xu M, Yan J, Zhao W, Zhang Z. Tunable band gap of graphyne-based homo- and hetero-structures by stacking sequences, strain and electric field. Phys Chem Chem Phys 2018; 20:26934-26946. [PMID: 30283931 DOI: 10.1039/c8cp03533d] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A comprehensive investigation was carried out on graphyne/graphyne (Gyne/Gyne), graphyne-like BN/graphyne-like BN (BNyne/BNyne) and graphyne/graphyne-like BN (Gyne/BNyne) bilayer structures using van der Waals (vdW)-corrected density functional theory. These bilayers exhibited distinct stacking-dependent characteristics in their ground state electronic structure and also had different responses to external strain and a vertical electric field. For the Gyne/Gyne and Gyne/BNyne bilayers, the application of biaxial tensile strain led to an increase in the band gap, while the application of biaxial compressive strain in addition to uniaxial strain, either under tension or compression, induced a reduction in the band gap. However, in the case of the BNyne/BNyne bilayer, the application of biaxial tensile strain led to a decrease in the band gap, but an increase in the band gap occurred under biaxial compressive strain, which could be explained by a change in the ionic nature of the B-N bonds. Under a vertical electric field, the band gaps of the homo-bilayers (Gyne/Gyne and BNyne/BNyne) decreased and were symmetrical. However, the hetero-bilayer (Gyne/BNyne) exhibited a decreased band gap under a positive electric field, but an almost constant band gap under a negative electric field. The physical origin of the band gap variation under an electric field was unraveled using energy-band theory. Our findings pave the way for experimental research and provide valuable insight into two-dimensional vdW layered structures for use in next generation flexible nanoelectronics and optoelectronic devices.
Collapse
Affiliation(s)
- Jiangni Yun
- School of Information Science and Technology, Northwest University, Xi'an, 710127, P. R. China.
| | | | | | | | | | | | | |
Collapse
|
44
|
Quan S, He L, Ni Y. Tunable mosaic structures in van der Waals layered materials. Phys Chem Chem Phys 2018; 20:25428-25436. [PMID: 30272077 DOI: 10.1039/c8cp04360d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Intrinsic mosaic structures composed of distinctive stacking domains separated by domain walls (DWs) show the potential to regulate many outstanding properties of van der Waals layered materials. A comprehensive simulation at the atomic scale is performed to explore how the lattice/twist mismatch and the interlayer interaction influence the mosaic configuration from the incommensurate Moiré pattern to commensurate mosaic structures by adapting a complex amplitude version of the phase field crystal method. It is found that after an incommensurate-commensurate transition occurs, the topology of the mosaic structure indicated by different domain wall (DW) patterns can be drastically changed. An experimentally observed intriguing spiral domain wall (SDW) network is revealed as result of the emergent mixed dislocation driven by minimizing the elastic and interlayer energies in the presence of both lattice and twist mismatches. The transition process from a herringbone domain wall (HBDW) network to a SDW network is also simulated, elucidated by a dislocation reaction and in good agreement with the experimental observations.
Collapse
Affiliation(s)
- Silong Quan
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | | | | |
Collapse
|
45
|
Sun J, Zhang Y, Lu Z, Li Q, Xue Q, Du S, Pu J, Wang L. Superlubricity Enabled by Pressure-Induced Friction Collapse. J Phys Chem Lett 2018; 9:2554-2559. [PMID: 29714483 DOI: 10.1021/acs.jpclett.8b00877] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
From daily intuitions to sophisticated atomic-scale experiments, friction is usually found to increase with normal load. Using first-principle calculations, here we show that the sliding friction of a graphene/graphene system can decrease with increasing normal load and collapse to nearly zero at a critical point. The unusual collapse of friction is attributed to an abnormal transition of the sliding potential energy surface from corrugated, to substantially flattened, and eventually to counter-corrugated states. The energy dissipation during the mutual sliding is thus suppressed sufficiently under the critical pressure. The friction collapse behavior is reproducible for other sliding systems, such as Xe/Cu, Pd/graphite, and MoS2/MoS2, suggesting its universality. The proposed mechanism for diminishing energy corrugation under critical normal load, added to the traditional structural lubricity, enriches our fundamental understanding about superlubricity and isostructural phase transitions and offers a novel means of achieving nearly frictionless sliding interfaces.
Collapse
Affiliation(s)
- Junhui Sun
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics , Chinese Academy of Sciences , Lanzhou 730000 , China
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , China
- Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , China
- University of Chinese Academy of Sciences , Beijing 100049 , China
- School of Physical Science and Technology , Lanzhou University , Lanzhou 730000 , China
| | - Yanning Zhang
- School of Energy Science and Engineering , University of Electronic Science and Technology of China , Chengdu 611731 , China
| | - Zhibin Lu
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics , Chinese Academy of Sciences , Lanzhou 730000 , China
| | - Qunyang Li
- Applied Mechanics Laboratory, Department of Engineering Mechanics , Tsinghua University , Beijing 100084 , China
| | - Qunji Xue
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics , Chinese Academy of Sciences , Lanzhou 730000 , China
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , China
| | - Shiyu Du
- Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , China
| | - Jibin Pu
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , China
| | - Liping Wang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics , Chinese Academy of Sciences , Lanzhou 730000 , China
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , China
| |
Collapse
|
46
|
3D-Graphene/Boron Nitride-stacking Material: a Fundamental van der Waals Heterostructure. Chem Res Chin Univ 2018. [DOI: 10.1007/s40242-018-8075-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
|
47
|
Ambrosetti A, Silvestrelli PL. Anomalous van der Waals-Casimir interactions on graphene: A concerted effect of temperature, retardation, and non-locality. J Chem Phys 2018; 148:134709. [DOI: 10.1063/1.5023170] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Alberto Ambrosetti
- Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, 35131 Padova, Italy
| | - Pier Luigi Silvestrelli
- Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, 35131 Padova, Italy
| |
Collapse
|
48
|
Sun F, Hao Z, Liu G, Wu C, Lu S, Huang S, Liu C, Hong Q, Chen X, Cai D, Kang J. p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium. NANOSCALE 2018; 10:4361-4369. [PMID: 29446428 DOI: 10.1039/c7nr08035b] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Hexagonal boron nitride (h-BN) is the widest band gap 2D material (>6 eV), which has attracted extensive attention. For exploring potential applications in optoelectronic devices, electrical conductivity modulation (n or p type) is of extreme importance. Here, we report the achievement of a large-scale and high quality h-BN monolayer with p-type conductivity by modulation doping of Mg using a low pressure chemical vapor deposition method. A large-scale monolayer h-BN (>10 inches) was grown by using a wound Cu foil roll on a multi-prong quartz fork. Magnesium nitride is used as a dopant precursor in a separate line due to its appropriate melting point and decomposition temperature. Density functional theory calculations revealed that the acceptor level introduced by Mg is almost pinned into the valence band and the activated holes are highly delocalized into the surrounding h-BN lattices. The h-BN:Mg monolayer showed a p-type conductivity with a considerable surface current of over 12 μA and a hole density of 1.7 × 1014 cm-2. The dielectrically tunable h-BN monolayer makes the fabrication of advanced 2D optoelectronic devices in short wavelength possible.
Collapse
Affiliation(s)
- Feipeng Sun
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
| | | | | | | | | | | | | | | | | | | | | |
Collapse
|
49
|
Cui TT, Li JC, Gao W, Jiang Q. Geometric and electronic structure of multilayered graphene: synergy of the nondirective ripples and the number of layers. Phys Chem Chem Phys 2018; 20:2230-2237. [PMID: 29303186 DOI: 10.1039/c7cp06446b] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
According to the Mermin-Wagner theorem, ripple deformation is ubiquitous in a two-dimensional (2D) free-standing sheet, influencing the electronic properties. However, the synergistic effects of the unrestricted ripples and the number of layers have still been a topic of extensive debate. To address this issue, we employed density functional theory including many-body van der Waals (vdW) correction to investigate the effects of the nondirective ripples on the geometric and electronic structures of multilayered graphene. We found that the many-body effects of vdW forces were essential for the binding of multilayered rippled graphene. The increase of curvature affects the electronic structures of rippled graphene by modifying stacking modes, while the increase in the number of layers can reduce band gap and work function directly. The coupling of these two effects can enhance the chemical activity of rippled graphene. Our results facilitate new insights into the geometric and electronic properties of rippled graphene, which can be generalized to other layered materials.
Collapse
Affiliation(s)
- Ting Ting Cui
- Key Laboratory of Automobile Materials, Ministry of Education, and School of Materials Science and Engineering, Jilin University, Changchun 130022, China.
| | | | | | | |
Collapse
|
50
|
Li X, Liu J, Ding K, Zhao X, Li S, Zhou W, Liang B. Temperature Dependence of Raman-Active In-Plane E 2g Phonons in Layered Graphene and h-BN Flakes. NANOSCALE RESEARCH LETTERS 2018; 13:25. [PMID: 29344758 PMCID: PMC5772347 DOI: 10.1186/s11671-018-2444-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/21/2017] [Accepted: 01/10/2018] [Indexed: 06/07/2023]
Abstract
Thermal properties of sp2 systems such as graphene and hexagonal boron nitride (h-BN) have attracted significant attention because of both systems being excellent thermal conductors. This research reports micro-Raman measurements on the in-plane E2g optical phonon peaks (~ 1580 cm-1 in graphene layers and ~ 1362 cm-1 in h-BN layers) as a function of temperature from - 194 to 200 °C. The h-BN flakes show higher sensitivity to temperature-dependent frequency shifts and broadenings than graphene flakes. Moreover, the thermal effect in the c direction on phonon frequency in h-BN layers is more sensitive than that in graphene layers but on phonon broadening in h-BN layers is similar as that in graphene layers. These results are very useful to understand the thermal properties and related physical mechanisms in h-BN and graphene flakes for applications of thermal devices.
Collapse
Affiliation(s)
- Xiaoli Li
- College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
| | - Jian Liu
- College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China
| | - Kai Ding
- College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China
| | - Xiaohui Zhao
- College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China
| | - Shuai Li
- College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China
| | - Wenguang Zhou
- College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China
| | - Baolai Liang
- College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China
| |
Collapse
|