Strain-induced ferromagnetism in antiferromagnetic LuMnO3 thin films

Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond

Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.

Compression Stress-Induced Internal Magnetic Field in Bulky TiO2 Photoanodes for Enhancing Charge-Carrier Dynamics

Enhancing charge-carrier dynamics is imperative to achieve efficient photoelectrodes for practical photoelectrochemical devices. However, a convincing explanation and answer for the important question which has thus far been absent relates to the precise mechanism of charge-carrier generation by solar light in photoelectrodes. Herein, to exclude the interference of complex multi-components and nanostructuring, we fabricate bulky TiO₂ photoanodes through physical vapor deposition. Integrating photoelectrochemical measurements and in situ characterizations, the photoinduced holes and electrons are transiently stored and promptly transported around the oxygen-bridge bonds and 5-coordinated Ti atoms to form polarons on the boundaries of TiO₂ grains, respectively. Most importantly, we also find that compressive stress-induced internal magnetic field can drastically enhance the charge-carrier dynamics for the TiO₂ photoanode, including directional separation and transport of charge carriers and an increase of surface polarons. As a result, bulky TiO₂ photoanode with high compressive stress displays a high charge-separation efficiency and an excellent charge-injection efficiency, leading to 2 orders of magnitude higher photocurrent than that produced by a classic TiO₂ photoanode. This work not only provides a fundamental understanding of the charge-carrier dynamics of the photoelectrodes but also provides a new paradigm for designing efficient photoelectrodes and controlling the dynamics of charge carriers.

Hierarchically Engineered Manganite Thin Films with a Wide-Temperature-Range Colossal Magnetoresistance Response

Colossal magnetoresistance is of great fundamental and technological significance in condensed-matter physics, magnetic memory, and sensing technologies. However, its relatively narrow working temperature window is still a severe obstacle for potential applications due to the nature of the material-inherent phase transition. Here, we realized hierarchical La_0.7Sr_0.3MnO₃ thin films with well-defined (001) and (221) crystallographic orientations by combining substrate modification with conventional thin-film deposition. Microscopic investigations into its magnetic transition through electron holography reveal that the hierarchical microstructure significantly broadens the temperature range of the ferromagnetic-paramagnetic transition, which further widens the response temperature range of the macroscopic colossal magnetoresistance under the scheme of the double-exchange mechanism. Therefore, this work puts forward a method to alter the magnetic transition and thus to extend the magnetoresistance working window by nanoengineering, which might be a promising approach also for other phase-transition-related effects in functional oxides.

Quantum magnetic phenomena in engineered heterointerface of low-dimensional van der Waals and non-van der Waals materials

Investigating magnetic phenomena at the microscopic level has emerged as an indispensable research domain in the field of low-dimensional magnetic materials. Understanding quantum phenomena that mediate the magnetic interactions in dimensionally confined materials is crucial from the perspective of designing cheaper, compact, and energy-efficient next-generation spintronic devices. The infrequent occurrence of intrinsic long-range magnetic order in dimensionally confined materials hinders the advancement of this domain. Hence, introducing and controlling the ferromagnetic character in two-dimensional materials is important for further prospective studies. The interface in a heterostructure significantly contributes to modulating its collective magnetic properties. Quantum phenomena occurring at the interface of engineered heterostructures can enhance or suppress magnetization of the system and introduce magnetic character to a native non-magnetic system. Considering most 2D magnetic materials are used as stacks with other materials in nanoscale devices, the methods to control the magnetism in a heterostructure and understanding the corresponding mechanism are crucial for promising spintronic and other functional applications. This review highlights the effect of electric polarization of the adjacent layer, changed structural configuration at the vicinity of the interface, natural strain induced by lattice mismatch, and exchange interaction in the interfacial region in modulating the magnetism of heterostructures of van der Waals and non-van der Waals materials. Further, prospects of interface-engineered magnetism in spin-dependent device applications are also discussed.

Controlling Strain Relaxation by Interface Design in Highly Lattice-Mismatched Heterostructure

Strain engineering plays an important role in tuning the microstructure and properties of heterostructures. The key to implement the strain modulation to heterostructures is controlling the strain relaxation, which is generally realized by varying the thickness of thin films or changing substrates. Here, we show that interface polarity can tailor the behavior of strain relaxation in a hexagonal manganite film, whose strain state can be tuned to different extents. Using scanning transmission electron microscopy, a reconstructed atomic layer with elongated interlayer spacing and minor in-plane rotation is observed at the interface, suggesting that the bond hierarchy at interface transits from three-dimension to two-dimension, which accounts for the strain-free heteroepitaxy. Utilizing interface polarity to control the strain relaxation highlights a conceptually opt route to optimize the strain engineering and the realization of strain-free heteroepitaxy in such highly lattice-mismatched heterostructure also provides possibility to transform more bulklike functional oxides to low dimensionality.

One Pot Synthesis, Surface and Magnetic Properties of Cu2O/Cu and Cu2O/CuO Nanocomposites

A series of copper-based systems containing two different nanocomposites (Cu2O/CuO and Cu2O/Cu) was synthesized by the egg white assisted auto-combustion route. This method was distinguished by the simplicity of its steps, low cost, one-pot synthesis process at low temperature and, short time. The characterization of the as prepared nanocomposites was carried out by using X-ray diffraction (XRD), Fourier-transform infrared (FTIR), Scanning electron microscope (SEM) and transmission electron micrograph (TEM), Energy dispersive spectrometry (EDS) techniques. Surface and magnetic properties of the obtained systems were determined by using N2 adsorption/desorption isotherms at 77 K and the vibrating sample magnetometer (VSM) technique. XRD results confirmed the formation of Cu2O/CuO and Cu2O/Cu nanocomposites with different ratios of well crystalline CuO, Cu2O, and Cu phases. FTIR results of the combusted product displays the presence of both CuO and Cu2O, respectively. SEM/EDS and TEM results confirm the formation of a porous nanocomposite containing Cu, O, and C elements. The change in concentration of the oxygen vacancies at the surface or interface of both Cu2O/CuO and Cu2O/Cu nanoparticles resulted in different changes in their magnetization. Based on this study, it is possible to obtain nanocomposite-based copper with multiple valances by a simple and inexpensive route which can be suitable for the fabrication of different transition metal composites.

Magnetoelectric Composites: Applications, Coupling Mechanisms, and Future Directions

Multiferroic (MF)-magnetoelectric (ME) composites, which integrate magnetic and ferroelectric materials, exhibit a higher operational temperature (above room temperature) and superior (several orders of magnitude) ME coupling when compared to single-phase multiferroic materials. Room temperature control and the switching of magnetic properties via an electric field and electrical properties by a magnetic field has motivated research towards the goal of realizing ultralow power and multifunctional nano (micro) electronic devices. Here, some of the leading applications for magnetoelectric composites are reviewed, and the mechanisms and nature of ME coupling in artificial composite systems are discussed. Ways to enhance the ME coupling and other physical properties are also demonstrated. Finally, emphasis is given to the important open questions and future directions in this field, where new breakthroughs could have a significant impact in transforming scientific discoveries to practical device applications, which can be well-controlled both magnetically and electrically.

Lithium permeation within lithium niobate multilayers with ultrathin chromium, silicon and carbon spacer layers

Li permeation through ultrathin Cr, Si and C layers and interfaces is of interest in the optimization of lithium ion batteries with respect to the control of Li flux. Twenty-one LiNbO3 layers (9 nm), which serve as solid state Li reservoirs, were sputter deposited in an alternating sequence of enriched 6Li or 7Li isotope fractions spaced with (8 nm) thin Cr, Si and C layers. The Li isotope contrast was used to measure Li permeation using depth profiling by secondary ion mass spectrometry and neutron reflectometry on a nanometer scale. Extremely low Li permeation for Cr and Si at room temperature exemplifies the effective blocking of Li movement at least for five years. However, Li permeation through C layers was found to be faster than through Cr and Si layers. With temperature, the Li permeation is enhanced through Cr as compared to that through Si layers. Furthermore, material characterisation shows amorphous LiNbO3, C and Si layers and polycrystalline Cr layers (with 80% elemental bcc chromium and 20% chromium-oxide situated at Cr/LiNbO3 interfaces). Annealing in air at 100 °C (373 K) does not oxidize the Cr layers any further. A stress of 12 GPa, which was measured in Cr spacer layers at room temperature, remains unchanged upon annealing. The origin of a weak ferromagnetic order measured at room temperature (300 K) was attributed to some traces of Cr and Si inside LiNbO3.

Antiphase boundary in antiferromagnetic multiferroic LuMn0.5Fe0.5O3: anomalous ferromagnetism, exchange bias effect and large vertical hysteretic shift

The emergence of exchange bias effect in Fe₃O₄ thin films has been since attributed to the presence of anti phase boundary (APB) growth defects despite lack of direct experimental evidence. In the present report, APB induced anomalous weak ferromagnetism and exchange bias property of single-phase antiferromagnetic (AFM) system LuMn_0.5Fe_0.5O₃ (LMFO) is discussed and ⁵⁷Fe Mössbauer spectroscopy and high resolution transmission electron microscopy (HRTEM) measurements are used to probe the origin of the observed effect. In addition to the sextet component corresponding to the long range AFM ordering, the measured Mössbauer spectra reveal the presence of a small component (10%-12%) near zero velocity with unusually small internal field. This indicates the presence of APB defects. From micro structural investigations using HRTEM, presence of APB type defects and dislocations are confirmed. In addition to the exchange bias effect, upon field cooling, hysteresis loop exhibits large vertical shift due to strong pinning effect of the APB. Finally we further annealed the optimally sintered sample LMFO and studied the evolution of defects, and their influence on weak ferromagnetism and exchange bias properties. Our present experimental findings may pave the way in creating new functionalities in materials using APB-type growth defects.

Probing Ferroic States in Oxide Thin Films Using Optical Second Harmonic Generation

Forthcoming low-energy consumption oxide electronics rely on the deterministic control of ferroelectric and multiferroic domain states at the nanoscale. In this review, we address the recent progress in the field of investigation of ferroic order in thin films and heterostructures, with a focus on non-invasive optical second harmonic generation (SHG). For more than 50 years, SHG has served as an established technique for probing ferroic order in bulk materials. Here, we will survey the specific new aspects introduced to SHG investigation of ferroelectrics and multiferroics by working with thin film structures. We show how SHG can probe complex ferroic domain patterns non-invasively and even if the lateral domain size is below the optical resolution limit or buried beneath an otherwise impenetrable cap layer. We emphasize the potential of SHG to distinguish contributions from individual (multi-) ferroic films or interfaces buried in a device or multilayer architecture. Special attention is given to monitoring switching events in buried ferroic domain- and domain-wall distributions by SHG, thus opening new avenues towards the determination of the domain dynamics. Another aspect studied by SHG is the role of strain. We will finally show that by integrating SHG into the ongoing thin film deposition process, we can monitor the emergence of ferroic order and properties in situ, while they emerge during growth. Our review closes with an outlook, emphasizing the present underrepresentation of ferroic switching dynamics in the study of ferroic oxide heterostructures.

Robust Ferromagnetism of Chromium Nanoparticles Formed in Superfluid Helium

Chromium nanoparticles are formed using superfluid helium droplets as the nanoreactors, which are strongly ferromagnetic. The transition from antiferromagentism to ferromagnetism is attributed to atomic-scale disorder in chromium nanoparticles, leading to abundant unbalanced surface spins. Theoretical modeling confirms a frustrated aggregation process in superfluid helium due to the antiferromagnetic nature of chromium.

Multiferroicity Broken by Commensurate Magnetic Ordering in Terbium Orthomanganite

TbMnO3 is an important multiferroic material with strong coupling between magnetic and ferroelectric orderings. Incommensurate magnetic ordering is suggested to be vital for this coupling in TbMnO3 , which can be modified by doping at the site of Tb and/or Mn. Our study shows that a self-doped solid solution Tb1-x Mny MnO3 (y≤x) can be formed with Mn doped into the site of Tb of TbMnO3 . When y is small Tb1-x Mny MnO3 shows both ferroelectric and incommensurate magnetic orders at low temperature, which is similar to TbMnO3 . However, if y is large enough, a commensurate antiferromagnetic ordering appears along with the incommensurate magnetic ordering to prevent the appearance of multiferroicity in Tb1-x Mny MnO3 . That is to say, the magnetoeletric coupling can be broken by the co-existence of a commensurate antiferromagnetic ordering. This finding may be useful to the study of TbMnO3 .

Non-collinear magnetism in multiferroic perovskites

We present an overview of the current interest in non-collinear magnetism in multiferroic perovskite crystals. We first describe the different microscopic mechanisms giving rise to the non-collinearity of spins in this class of materials. We discuss, in particular, the interplay between non-collinear magnetism and ferroelectric and antiferrodistortive distortions of the perovskite structure, and how this can promote magnetoelectric responses. We then provide a literature survey on non-collinear multiferroic perovskites. We discuss numerous examples of spin cantings driving weak ferromagnetism in transition metal perovskites, and of spin-induced ferroelectricity as observed in the rare-earth based perovskites. These examples are chosen to best illustrate the fundamental role of non-collinear magnetism in the design of multiferroicity.

High I on/I off current ratio graphene field effect transistor: the role of line defect

The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5-8-5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the I on/I off ratio in graphene transistors with ELDs enhances their applicability in digital devices.

Novel multiferroicity in GdMnO3 thin films with self-assembled nano-twinned domains

There have been many interests in exploring multiferroic materials with superior ferroelectric and magnetic properties for the purpose of developing multifunctional devices. Fabrication of thin films plays an important role in achieving this purpose, since the multiferroicity can be tuned via strain, dimensionality, and size effect, without varying the chemical composition. Here, we report exotic multiferroic behaviors, including high-T_C (~75 K) ferroelectric state, a large spontaneous polarization (~4900 μC/m²) and relatively strong ferromagnetism emerging at ~105 K, in orthorhombic GdMnO₃/SrTiO₃ (001) thin films with self-assembled nano-scale twin-like domains. We propose a possible ab-plane spiral-spin-order phase to be responsible for the large spontaneous polarization in the films, which can only be stabilized by relatively high magnetic field H > 6 T in the bulk crystals. It is suggested that the nano-scale twin-like domain structure is essential for the high temperature ferroelectricity and ferromagnetism of the thin films.

Multiferroic properties of o-LuMnO3 controlled by b-axis strain

Strain is a leading candidate for controlling magnetoelectric coupling in multiferroics. Here, we use x-ray diffraction to study the coupling between magnetic order and structural distortion in epitaxial films of the orthorhombic (o-) perovskite LuMnO(3). An antiferromagnetic spin canting in the E-type magnetic structure is shown to be related to the ferroelectrically induced structural distortion and to a change in the magnetic propagation vector. By comparing films of different orientations and thicknesses, these quantities are found to be controlled by b-axis strain. It is shown that compressive strain destabilizes the commensurate E-type structure and reduces its accompanying ferroelectric distortion.

Boron nitride nanotubes for spintronics

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

Structure and magnetism of epitaxial PrVO3 films

The interplay between charge, spin, orbital and lattice degrees of freedom in transition metal oxides has motivated extensive research aiming to understand the coupling phenomena in these multifunctional materials. Among them, rare earth vanadates are Mott insulators characterized by spin and orbital orderings strongly influenced by lattice distortions. Using epitaxial strain as a means to tailor the unit cell deformation, we report here on the first thin films of PrVO3 grown on (001)-oriented SrTiO3 substrate by pulsed laser deposition. An extensive structural characterization of the PrVO3 films, combining x-ray diffraction and high-resolution transmission electron microscopy studies, reveals the presence of oriented domains and a unit cell deformation tailored by the growth conditions. We have also investigated the physical properties of the PrVO3 films. We show that, while PrVO3 exhibits an insulating character, magnetic measurements indicate low-temperature hard-ferromagnetic behavior below 80 K. We discuss these properties in view of the thin-film structure.