1
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Sahu P, Yang Y, Fan Y, Jaffrès H, Chen JY, Devaux X, Fagot-Revurat Y, Migot S, Rongione E, Chen T, Abel Dainone P, George JM, Dhillon S, Micica M, Lu Y, Wang JP. Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed Bi xSe 1-x/CoFeB Bilayers. ACS APPLIED MATERIALS & INTERFACES 2023; 15:38592-38602. [PMID: 37550946 DOI: 10.1021/acsami.3c07695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/09/2023]
Abstract
Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TI's exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two methods have been employed to study SCC in BSG (tBSG = 6-16 nm)/CoFeB(5 nm) bilayers with different BSG thicknesses. First, spin pumping is used to generate a spin current in CoFeB and detect SCC by the inverse Edelstein effect (IEE). The maximum SCC efficiency (SCE) is measured to be as large as 0.035 nm (IEE length λIEE) in a 6 nm thick BSG sample, which shows a strong decay when tBSG increases due to the increase of BSG surface roughness. The second method is THz time-domain spectroscopy, which reveals a small tBSG dependence of SCE, validating the occurrence of a pure interface state-related SCC. Furthermore, our angle-resolved photoemission spectroscopy data show dispersive two-dimensional surface states that cross the bulk gap until the Fermi level, strengthening the possibility of SCC due to the amorphous TI states. Our studies provide a new experimental direction toward the search for topological systems in amorphous solids.
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Affiliation(s)
- Protyush Sahu
- School of Physics and Astronomy, University of Minnesota, 116 Church Street SE, Minneapolis, Minnesota 55455, United States
| | - Yifei Yang
- Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street SE, Minneapolis, Minnesota 55455, United States
| | - Yihong Fan
- Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street SE, Minneapolis, Minnesota 55455, United States
| | - Henri Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Jun-Yang Chen
- Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street SE, Minneapolis, Minnesota 55455, United States
| | - Xavier Devaux
- Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Campus ARTEM, 2 Allée André Guinier, 54011 Nancy, France
| | - Yannick Fagot-Revurat
- Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Campus ARTEM, 2 Allée André Guinier, 54011 Nancy, France
| | - Sylvie Migot
- Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Campus ARTEM, 2 Allée André Guinier, 54011 Nancy, France
| | - Enzo Rongione
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, F-75005 Paris, France
| | - Tongxin Chen
- Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Campus ARTEM, 2 Allée André Guinier, 54011 Nancy, France
| | - Pambiang Abel Dainone
- Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Campus ARTEM, 2 Allée André Guinier, 54011 Nancy, France
| | - Jean-Marie George
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Sukhdeep Dhillon
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, F-75005 Paris, France
| | - Martin Micica
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, F-75005 Paris, France
| | - Yuan Lu
- Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Campus ARTEM, 2 Allée André Guinier, 54011 Nancy, France
| | - Jian-Ping Wang
- School of Physics and Astronomy, University of Minnesota, 116 Church Street SE, Minneapolis, Minnesota 55455, United States
- Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street SE, Minneapolis, Minnesota 55455, United States
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2
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Xu H, Jia K, Huang Y, Meng F, Zhang Q, Zhang Y, Cheng C, Lan G, Dong J, Wei J, Feng J, He C, Yuan Z, Zhu M, He W, Wan C, Wei H, Wang S, Shao Q, Gu L, Coey M, Shi Y, Zhang G, Han X, Yu G. Electrical detection of spin pumping in van der Waals ferromagnetic Cr 2Ge 2Te 6 with low magnetic damping. Nat Commun 2023; 14:3824. [PMID: 37380642 DOI: 10.1038/s41467-023-39529-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Accepted: 06/15/2023] [Indexed: 06/30/2023] Open
Abstract
The discovery of magnetic order in atomically-thin van der Waals materials has strengthened the alliance between spintronics and two-dimensional materials. An important use of magnetic two-dimensional materials in spintronic devices, which has not yet been demonstrated, would be for coherent spin injection via the spin-pumping effect. Here, we report spin pumping from Cr2Ge2Te6 into Pt or W and detection of the spin current by inverse spin Hall effect. The magnetization dynamics of the hybrid Cr2Ge2Te6/Pt system are measured, and a magnetic damping constant of ~ 4-10 × 10-4 is obtained for thick Cr2Ge2Te6 flakes, a record low for ferromagnetic van der Waals materials. Moreover, a high interface spin transmission efficiency (a spin mixing conductance of 2.4 × 1019/m2) is directly extracted, which is instrumental in delivering spin-related quantities such as spin angular momentum and spin-orbit torque across an interface of the van der Waals system. The low magnetic damping that promotes efficient spin current generation together with high interfacial spin transmission efficiency suggests promising applications for integrating Cr2Ge2Te6 into low-temperature two-dimensional spintronic devices as the source of coherent spin or magnon current.
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Affiliation(s)
- Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Ke Jia
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Fanqi Meng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guibin Lan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jing Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinwu Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
| | - Jiafeng Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Zhe Yuan
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Mingliang Zhu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shouguo Wang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Qiming Shao
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Michael Coey
- School of Physics and CRANN, Trinity College, Dublin, 2, Ireland
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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3
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Su SH, Chong CW, Lee JC, Chen YC, Marchenkov VV, Huang JCA. Effect of Cu Intercalation Layer on the Enhancement of Spin-to-Charge Conversion in Py/Cu/Bi 2Se 3. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3687. [PMID: 36296876 PMCID: PMC9606994 DOI: 10.3390/nano12203687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2022] [Revised: 10/14/2022] [Accepted: 10/17/2022] [Indexed: 06/16/2023]
Abstract
The spin-to-charge conversion in Permalloy (Py)/Cu/Bi2Se3 is tunable by changing the Cu layer thickness. The conversion rate was studied using the spin pumping technique. The inverse Edelstein effect (IEE) length λIEE is found to increase up to ~2.7 nm when a 7 nm Cu layer is introduced. Interestingly, the maximized λIEE is obtained when the effective spin-mixing conductance (and thus Js) is decreased due to Cu insertion. The monotonic increase in λIEE with decreasing Js suggests that the IEE relaxation time (τ) is enhanced due to the additional tunnelling barrier (Cu layer) that limits the interfacial transmission rate. The results demonstrate the importance of interface engineering in the magnetic heterostructure of Py/topological insulators (TIs), the key factor in optimizing spin-to-charge conversion efficiency.
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Affiliation(s)
- Shu Hsuan Su
- Department of Physics, National Cheng Kung University, Tainan 701401, Taiwan
| | - Cheong-Wei Chong
- Department of Physics, National Cheng Kung University, Tainan 701401, Taiwan
| | - Jung-Chuan Lee
- Department of Physics, National Cheng Kung University, Tainan 701401, Taiwan
- Sheng Chuang Technology Company, Taichung 407330, Taiwan
| | - Yi-Chun Chen
- Department of Physics, National Cheng Kung University, Tainan 701401, Taiwan
| | - Vyacheslav Viktorovich Marchenkov
- M.N. Miheev Institute of Metal Physics, UB RAS, 620108 Ekaterinburg, Russia
- Institute of Physics and Technology, Ural Federal University, 620002 Ekaterinburg, Russia
| | - Jung-Chun Andrew Huang
- Department of Physics, National Cheng Kung University, Tainan 701401, Taiwan
- Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811726, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 10622, Taiwan
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4
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Xu X, Zhang D, Liu B, Meng H, Xu J, Zhong Z, Tang X, Zhang H, Jin L. Giant Extrinsic Spin Hall Effect in Platinum-Titanium Oxide Nanocomposite Films. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105726. [PMID: 35393788 PMCID: PMC9165503 DOI: 10.1002/advs.202105726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Revised: 03/05/2022] [Indexed: 06/14/2023]
Abstract
Although the spin Hall effect provides a pathway for efficient and fast current-induced manipulation of magnetization, application of spin-orbit torque magnetic random access memory with low power dissipation is still limited to spin Hall materials with low spin Hall angles or very high resistivities. This work reports a group of spin Hall materials, Pt1 -x (TiO2 )x nanocomposites, that combines a giant spin Hall effect with a low resistivity. The spin Hall angle of Pt1 -x (TiO2 )x in an yttrium iron garnet/Pt1 -x (TiO2 )x double-layer heterostructure is estimated from a combination of ferromagnetic resonance, spin pumping, and inverse spin Hall experiments. A giant spin Hall angle 1.607 ± 0.04 is obtained in a Pt0.94 (TiO2 )0.06 nanocomposite film, which is an increase by an order of magnitude compared with 0.051 ± 0.002 in pure Pt thin film under the same conditions. The great enhancement of spin Hall angle is attributed to strong side-jump induced by TiO2 impurities. These findings provide a new nanocomposite spin Hall material combining a giant spin Hall angle, low resistivity and excellent process compatibility with semiconductors for developing highly efficiency current-induced magnetization switching memory devices and logic devices.
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Affiliation(s)
- Xinkai Xu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Dainan Zhang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Bo Liu
- Key Laboratory of Spintronics MaterialsDevices and Systems of Zhejiang ProvinceHangzhou311305China
| | - Hao Meng
- Key Laboratory of Spintronics MaterialsDevices and Systems of Zhejiang ProvinceHangzhou311305China
| | - Jiapeng Xu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Zhiyong Zhong
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Xiaoli Tang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Huaiwu Zhang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Lichuan Jin
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China
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5
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Suppression of spin rectification effects in spin pumping experiments. Sci Rep 2022; 12:224. [PMID: 34997112 PMCID: PMC8742073 DOI: 10.1038/s41598-021-04319-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2021] [Accepted: 12/20/2021] [Indexed: 12/03/2022] Open
Abstract
Spin pumping (SP) is a well-established method to generate pure spin currents allowing efficient spin injection into metals and semiconductors avoiding the problem of impedance mismatch. However, to disentangle pure spin currents from parasitic effects due to spin rectification effects (SRE) is a difficult task that is seriously hampering further developments. Here we propose a simple method that allows suppressing SRE contribution to inverse spin Hall effect (ISHE) voltage signal avoiding long and tedious angle-dependent measurements. We show an experimental study in the well-known Py/Pt system by using a coplanar waveguide (CPW). Results obtained demonstrate that the sign and size of the measured transverse voltage signal depends on the width of the sample along the CPW active line. A progressive reduction of this width evidences that SRE contribution to the measured transverse voltage signal becomes negligibly small for sample width below 200 μm. A numerical solution of the Maxwell equations in the CPW-sample setup, by using the Landau-Lifshitz equation with the Gilbert damping term (LLG) as the constitutive equation of the media, and with the proper set of boundary conditions, confirms the obtained experimental results.
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6
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Fan Y, Finley J, Han J, Holtz ME, Quarterman P, Zhang P, Safi TS, Hou JT, Grutter AJ, Liu L. Resonant Spin Transmission Mediated by Magnons in a Magnetic Insulator Multilayer Structure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008555. [PMID: 33899284 DOI: 10.1002/adma.202008555] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2020] [Revised: 02/15/2021] [Indexed: 06/12/2023]
Abstract
While being electrically insulating, magnetic insulators can behave as good spin conductors by carrying spin current with excited spin waves. So far, magnetic insulators are utilized in multilayer heterostructures for optimizing spin transport or to form magnon spin valves for reaching controls over the spin flow. In these studies, it remains an intensively visited topic as to what the corresponding roles of coherent and incoherent magnons are in the spin transmission. Meanwhile, understanding the underlying mechanism associated with spin transmission in insulators can help to identify new mechanisms that can further improve the spin transport efficiency. Here, by studying spin transport in a magnetic-metal/magnetic-insulator/platinum multilayer, it is demonstrated that coherent magnons can transfer spins efficiently above the magnon bandgap of magnetic insulators. Particularly the standing spin-wave mode can greatly enhance the spin flow by inducing a resonant magnon transmission. Furthermore, within the magnon bandgap, a shutdown of spin transmission due to the blocking of coherent magnons is observed. The demonstrated magnon transmission enhancement and filtering effect provides an efficient method for modulating spin current in magnonic devices.
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Affiliation(s)
- Yabin Fan
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Joseph Finley
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jiahao Han
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Megan E Holtz
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Patrick Quarterman
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Pengxiang Zhang
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Taqiyyah S Safi
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Justin T Hou
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Alexander J Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Luqiao Liu
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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7
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Li Y, Zhao C, Amin VP, Zhang Z, Vogel M, Xiong Y, Sklenar J, Divan R, Pearson J, Stiles MD, Zhang W, Hoffmann A, Novosad V. Phase-resolved electrical detection of hybrid magnonic devices. APPLIED PHYSICS LETTERS 2021; 118:10.1063/5.0042784. [PMID: 36452035 PMCID: PMC9706546 DOI: 10.1063/5.0042784] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2021] [Accepted: 05/03/2021] [Indexed: 06/17/2023]
Abstract
We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave (n = 1) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, with Py or YIG dominated excitations, can be detected via the spin rectification signals from the conductive Py layer, providing phase resolution of the coupled dynamics. The phase characterization is also applied to a nonlocally excited Py device, revealing the additional phase shift due to the perpendicular Oersted field. Our results provide a device platform for exploring hybrid magnonic dynamics and probing their phases, which are crucial for implementing coherent information processing with magnon excitations.
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Affiliation(s)
- Yi Li
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
| | - Chenbo Zhao
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
| | - Vivek P. Amin
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742, USA
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Zhizhi Zhang
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
| | - Michael Vogel
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
- Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Strasse 40, Kassel 34132, Germany
| | - Yuzan Xiong
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
- Department of Physics, Oakland University, Rochester, MI 48309, USA
| | - Joseph Sklenar
- Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48202, USA
| | - Ralu Divan
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
| | - John Pearson
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
| | - Mark D. Stiles
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Wei Zhang
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
- Department of Physics, Oakland University, Rochester, MI 48309, USA
| | - Axel Hoffmann
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign Urbana, IL 61801, USA
| | - Valentine Novosad
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
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8
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Wen Z, Qiu Z, Tölle S, Gorini C, Seki T, Hou D, Kubota T, Eckern U, Saitoh E, Takanashi K. Spin-charge conversion in NiMnSb Heusler alloy films. SCIENCE ADVANCES 2019; 5:eaaw9337. [PMID: 31853493 PMCID: PMC6910839 DOI: 10.1126/sciadv.aaw9337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2019] [Accepted: 10/28/2019] [Indexed: 06/10/2023]
Abstract
Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures, which exhibit high spin polarization and yield huge magnetoresistance ratios. Besides serving as ferromagnetic electrodes, Heusler alloys also have the potential to host spin-charge conversion. Here, we report on the spin-charge conversion effect in the prototypical Heusler alloy NiMnSb. An unusual charge signal was observed with a sign change at low temperature, which can be manipulated by film thickness and ordering structure. It is found that the spin-charge conversion has two contributions. First, the interfacial contribution causes a negative voltage signal, which is almost constant versus temperature. The second contribution is temperature dependent because it is dominated by minority states due to thermally excited magnons in the bulk part of the film. This work provides a pathway for the manipulation of spin-charge conversion in ferromagnetic metals by interface-bulk engineering for spintronic devices.
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Affiliation(s)
- Zhenchao Wen
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
- National Institute for Materials Science (NIMS), Tsukuba 304-0047, Japan
| | - Zhiyong Qiu
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, China
| | - Sebastian Tölle
- Institut für Physik, Universität Augsburg, 86135 Augsburg, Germany
| | - Cosimo Gorini
- Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany
| | - Takeshi Seki
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
| | - Dazhi Hou
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Takahide Kubota
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
| | - Ulrich Eckern
- Institut für Physik, Universität Augsburg, 86135 Augsburg, Germany
| | - Eiji Saitoh
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Koki Takanashi
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
- Center for Science and Innovation in Spintronics, Core Research Cluster, Tohoku University, Sendai 980-8577, Japan
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9
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Zhu T, Chang FF, Zhan XZ. Interface induced enhancement of inverse spin Hall voltage in NiFe/Pt bilayers capped by MgO layer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:285801. [PMID: 30959493 DOI: 10.1088/1361-648x/ab172a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In ferromagnet/heavy metal bilayers, a spin current can be generated under the ferromagnetic resonance (FMR) condition, and then converted into a charge current in adjacent nonmagnetic metals through inverse spin Hall effect (ISHE). Here, we report an experimental observation of interface induced ISHE enhancement in NiFe/Pt bilayers covered by MgO layer. Compared to bare NiFe/Pt bilayers, Pt/MgO interface induces an enhancement of the spin-charge conversion in the NiFe/Pt/MgO trilayers with very thin Pt layers, in agreement with the corresponding trend of Gilbert damping enhancement. When the thickness of Pt is below 1.6 nm, the ISHE induced charge current has about 70% enhancement. These results open a new pathway to improve the spin-charge conversion efficiency by interface engineering.
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Affiliation(s)
- T Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China. Dongguan Neutron Science Center, Dongguan 523803, People's Republic of China
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10
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Cerqueira C, Qin JY, Dang H, Djeffal A, Le Breton JC, Hehn M, Rojas-Sanchez JC, Devaux X, Suire S, Migot S, Schieffer P, Mussot JG, Łaczkowski P, Anane A, Petit-Watelot S, Stoffel M, Mangin S, Liu Z, Cheng BW, Han XF, Jaffrès H, George JM, Lu Y. Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal-Silicon-Metal Vertical Structures. NANO LETTERS 2019; 19:90-99. [PMID: 30472859 DOI: 10.1021/acs.nanolett.8b03386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal-semiconductor-metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 μm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO-Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO-Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.
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Affiliation(s)
- Carolina Cerqueira
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
- Laboratoire des Solides Irradiés, École Polytechnique, CNRS, CEA , Université Paris-Saclay , 91128 Palaiseau , France
| | - Jian Yin Qin
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
- Beijing National Laboratory of Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences , Beijing 100190 , PR China
| | - Huong Dang
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Abdelhak Djeffal
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | | | - Michel Hehn
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Juan-Carlos Rojas-Sanchez
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Xavier Devaux
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Stéphane Suire
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Sylvie Migot
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Philippe Schieffer
- Univ RennesCNRS, IPR (Institut de Physique de Rennes) - UMR 6251 , F-35000 Rennes , France
| | - Jean-Georges Mussot
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Piotr Łaczkowski
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Abdelmadjid Anane
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Sebastien Petit-Watelot
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Mathieu Stoffel
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Stéphane Mangin
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Zhi Liu
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Center of Materials Science and Optoelectronics Engineering , University of Chinese Academy of Sciences Chinese Academy of Sciences , Beijing 100083 , PR China
| | - Bu Wen Cheng
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Center of Materials Science and Optoelectronics Engineering , University of Chinese Academy of Sciences Chinese Academy of Sciences , Beijing 100083 , PR China
| | - Xiu Feng Han
- Beijing National Laboratory of Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences , Beijing 100190 , PR China
| | - Henri Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Jean-Marie George
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Yuan Lu
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
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11
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Luo GY, Lin JG, Chiang WC, Chang CR. Spin pump and probe in lanthanum strontium manganite/platinum bilayers. Sci Rep 2017; 7:6612. [PMID: 28747739 PMCID: PMC5529535 DOI: 10.1038/s41598-017-06861-1] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2016] [Accepted: 06/20/2017] [Indexed: 11/18/2022] Open
Abstract
Ferromagnetic resonance driven spin pumping (FMR-SP) is a novel method to transfer spin current from the ferromagnetic (FM) layer into the adjacent normal metal (NM) layer in an FM/NM bilayer system. Consequently, the spin current could be probed in NM layer via inverse spin Hall effect (ISHE). In spite of numerous ISHE studies on FM/Pt bilayers, La0.7Sr0.3MnO3(LSMO)/Pt system has been less explored and its relevant information about interface property (characterized by spin mixing conductance) and spin-charge conversion efficiency (characterized by spin Hall angle) is a matter of importance for the possible applications of spintronic devices. In this work, the technique of FMR-SP has been applied on two series of LSMO/Pt bilayers with the thickness of each layer being varied. The thickness dependences of ISHE voltage allow to extract the values of spin mixing conductance and spin Hall angle of LSMO/Pt bilayers, which are (1.8 ± 0.4) × 1019 m−2 and (1.2 ± 0.1) % respectively. In comparison with other FM/Pt systems, LSMO/Pt has comparable spin current density and spin mixing conductance, regardless its distinct electronic structure from other ferromagnetic metals.
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Affiliation(s)
- G Y Luo
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan.,Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan
| | - J G Lin
- Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan.
| | - Wen-Chung Chiang
- Department of Optoelectric Physics, Chinese Culture University, Taipei, 11114, Taiwan.
| | - Ching-Ray Chang
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
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12
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Gou P, Qian J, Xi F, Zou Y, Cao J, Yu H, Zhao Z, Yang L, Xu J, Wang H, Zhang L, An Z. Dramatically Enhanced Spin Dynamo with Plasmonic Diabolo Cavity. Sci Rep 2017; 7:5332. [PMID: 28706290 PMCID: PMC5509722 DOI: 10.1038/s41598-017-05634-0] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2017] [Accepted: 05/31/2017] [Indexed: 11/08/2022] Open
Abstract
The applications of spin dynamos, which could potentially power complex nanoscopic devices, have so far been limited owing to their extremely low energy conversion efficiencies. Here, we present a unique plasmonic diabolo cavity (PDC) that dramatically improves the spin rectification signal (enhancement of more than three orders of magnitude) under microwave excitation; further, it enables an energy conversion efficiency of up to ~0.69 mV/mW, compared with ~0.27 μV/mW without a PDC. This remarkable improvement arises from the simultaneous enhancement of the microwave electric field (~13-fold) and the magnetic field (~195-fold), which cooperate in the spin precession process generates photovoltage (PV) efficiently under ferromagnetic resonance (FMR) conditions. The interplay of the microwave electromagnetic resonance and the ferromagnetic resonance originates from a hybridized mode based on the plasmonic resonance of the diabolo structure and Fabry-Perot-like modes in the PDC. Our work sheds light on how more efficient spin dynamo devices for practical applications could be realized and paves the way for future studies utilizing both artificial and natural magnetism for applications in many disciplines, such as for the design of future efficient wireless energy conversion devices, high frequent resonant spintronic devices, and magnonic metamaterials.
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Affiliation(s)
- Peng Gou
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jie Qian
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Fuchun Xi
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Yuexin Zou
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jun Cao
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Haochi Yu
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Ziyi Zhao
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Le Yang
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jie Xu
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Hengliang Wang
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Lijian Zhang
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China.
- Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai, 200433, China.
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13
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Bai L, Harder M, Hyde P, Zhang Z, Hu CM, Chen YP, Xiao JQ. Cavity Mediated Manipulation of Distant Spin Currents Using a Cavity-Magnon-Polariton. PHYSICAL REVIEW LETTERS 2017; 118:217201. [PMID: 28598650 DOI: 10.1103/physrevlett.118.217201] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2017] [Indexed: 06/07/2023]
Abstract
Using electrical detection of a strongly coupled spin-photon system comprised of a microwave cavity mode and two magnetic samples, we demonstrate the long distance manipulation of spin currents. This distant control is not limited by the spin diffusion length, instead depending on the interplay between the local and global properties of the coupled system, enabling systematic spin current control over large distance scales (several centimeters in this work). This flexibility opens the door to improved spin current generation and manipulation for cavity spintronic devices.
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Affiliation(s)
- Lihui Bai
- Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2
| | - Michael Harder
- Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2
| | - Paul Hyde
- Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2
| | - Zhaohui Zhang
- Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2
| | - Can-Ming Hu
- Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2
| | - Y P Chen
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA
| | - John Q Xiao
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA
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14
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Chen L, Decker M, Kronseder M, Islinger R, Gmitra M, Schuh D, Bougeard D, Fabian J, Weiss D, Back CH. Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature. Nat Commun 2016; 7:13802. [PMID: 27958265 PMCID: PMC5159805 DOI: 10.1038/ncomms13802] [Citation(s) in RCA: 35] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2016] [Accepted: 11/01/2016] [Indexed: 11/11/2022] Open
Abstract
Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate—due to strong spin–orbit interaction—spin currents via the spin Hall effect and induce a torque at the interface to the ferromagnet. Here we report the observation of robust SOT occuring at a single crystalline Fe/GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation. Interfacial spin-orbit torque allows electrical manipulation of magnetization, but this has been shown mostly in polycrystalline metal bilayers. Here the authors show robust spin-orbit torque in single crystalline Fe/GaAs interface at room temperature, observing conversion between spin and charge current.
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Affiliation(s)
- L Chen
- Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
| | - M Decker
- Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
| | - M Kronseder
- Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
| | - R Islinger
- Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
| | - M Gmitra
- Institute of Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - D Schuh
- Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
| | - D Bougeard
- Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
| | - J Fabian
- Institute of Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - D Weiss
- Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
| | - C H Back
- Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
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15
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Hou D, Qiu Z, Iguchi R, Sato K, Vehstedt EK, Uchida K, Bauer GEW, Saitoh E. Observation of temperature-gradient-induced magnetization. Nat Commun 2016; 7:12265. [PMID: 27457185 PMCID: PMC4963471 DOI: 10.1038/ncomms12265] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2016] [Accepted: 06/16/2016] [Indexed: 12/03/2022] Open
Abstract
Applying magnetic fields has been the method of choice to magnetize non-magnetic materials, but they are difficult to focus. The magneto-electric effect and voltage-induced magnetization generate magnetization by applied electric fields, but only in special compounds or heterostructures. Here we demonstrate that a simple metal such as gold can be magnetized by a temperature gradient or magnetic resonance when in contact with a magnetic insulator by observing an anomalous Hall-like effect, which directly proves the breakdown of time-reversal symmetry. Such Hall measurements give experimental access to the spectral spin Hall conductance of the host metal, which is closely related to other spin caloritronics phenomena such as the spin Nernst effect and serves as a reference for theoretical calculation.
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Affiliation(s)
- Dazhi Hou
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan
| | - Zhiyong Qiu
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan
| | - R. Iguchi
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - K. Sato
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - E. K. Vehstedt
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London WC1H 0AH, UK
| | - K. Uchida
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan
| | - G. E. W. Bauer
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Kavli Institute of NanoScience, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - E. Saitoh
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan
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16
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Nanowire spin torque oscillator driven by spin orbit torques. Nat Commun 2014; 5:5616. [DOI: 10.1038/ncomms6616] [Citation(s) in RCA: 151] [Impact Index Per Article: 15.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2014] [Accepted: 10/21/2014] [Indexed: 11/08/2022] Open
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17
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Lee HR, Lee K, Cho J, Choi YH, You CY, Jung MH, Bonell F, Shiota Y, Miwa S, Suzuki Y. Spin-orbit torque in a bulk perpendicular magnetic anisotropy Pd/FePd/MgO system. Sci Rep 2014; 4:6548. [PMID: 25293693 PMCID: PMC4189023 DOI: 10.1038/srep06548] [Citation(s) in RCA: 55] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2014] [Accepted: 09/17/2014] [Indexed: 11/28/2022] Open
Abstract
Spin-orbit torques, including the Rashba and spin Hall effects, have been widely observed and investigated in various systems. Since interesting spin-orbit torque (SOT) arises at the interface between heavy nonmagnetic metals and ferromagnetic metals, most studies have focused on the ultra-thin ferromagnetic layer with interface perpendicular magnetic anisotropy. Here, we measured the effective longitudinal and transverse fields of bulk perpendicular magnetic anisotropy Pd/FePd (1.54 to 2.43 nm)/MgO systems using harmonic methods with careful correction procedures. We found that in our range of thicknesses, the effective longitudinal and transverse fields are five to ten times larger than those reported in interface perpendicular magnetic anisotropy systems. The observed magnitude and thickness dependence of the effective fields suggest that the SOT do not have a purely interfacial origin in our samples.
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Affiliation(s)
- Hwang-Rae Lee
- Department of Physics, Inha University, Incheon 402-751, Korea
| | - Kyujoon Lee
- Department of Physics, Sogang University, Seoul 121-742, Korea
| | - Jaehun Cho
- Department of Physics, Inha University, Incheon 402-751, Korea
| | - Young-Ha Choi
- Department of Physics, Sogang University, Seoul 121-742, Korea
| | - Chun-Yeol You
- Department of Physics, Inha University, Incheon 402-751, Korea
| | - Myung-Hwa Jung
- Department of Physics, Sogang University, Seoul 121-742, Korea
| | - Frédéric Bonell
- 1] Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan [2] CREST, Japan Science Technology Agency, Saitama 332-0012, Japan
| | - Yoichi Shiota
- 1] Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan [2] CREST, Japan Science Technology Agency, Saitama 332-0012, Japan
| | - Shinji Miwa
- 1] Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan [2] CREST, Japan Science Technology Agency, Saitama 332-0012, Japan
| | - Yoshishige Suzuki
- 1] Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan [2] CREST, Japan Science Technology Agency, Saitama 332-0012, Japan
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Rojas-Sánchez JC, Reyren N, Laczkowski P, Savero W, Attané JP, Deranlot C, Jamet M, George JM, Vila L, Jaffrès H. Spin pumping and inverse spin Hall effect in platinum: the essential role of spin-memory loss at metallic interfaces. PHYSICAL REVIEW LETTERS 2014; 112:106602. [PMID: 24679318 DOI: 10.1103/physrevlett.112.106602] [Citation(s) in RCA: 43] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2013] [Indexed: 06/03/2023]
Abstract
Through combined ferromagnetic resonance, spin pumping, and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of ℓsfPt=3.4±0.4 nm and θSHEPt=0.056±0.010 for the respective spin diffusion length and spin Hall angle for Pt. Our data and model emphasize the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.
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Affiliation(s)
- J-C Rojas-Sánchez
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France and Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - N Reyren
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - P Laczkowski
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - W Savero
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France
| | - J-P Attané
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France
| | - C Deranlot
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - M Jamet
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France
| | - J-M George
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - L Vila
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France
| | - H Jaffrès
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
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