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Zhou Y, Guo T, Han L, Liao L, He W, Wan C, Chen C, Wang Q, Qiao L, Bai H, Zhu W, Zhang Y, Chen R, Han X, Pan F, Song C. Spin-torque-driven antiferromagnetic resonance. SCIENCE ADVANCES 2024; 10:eadk7935. [PMID: 38215195 PMCID: PMC10786412 DOI: 10.1126/sciadv.adk7935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Accepted: 12/14/2023] [Indexed: 01/14/2024]
Abstract
The intrinsic fast dynamics make antiferromagnetic spintronics a promising avenue for faster data processing. Ultrafast antiferromagnetic resonance-generated spin current provides valuable access to antiferromagnetic spin dynamics. However, the inverse effect, spin-torque-driven antiferromagnetic resonance (ST-AFMR), which is attractive for practical utilization of fast devices but seriously impeded by difficulties in controlling and detecting Néel vectors, remains elusive. We observe ST-AFMR in Y3Fe5O12/α-Fe2O3/Pt at room temperature. The Néel vector oscillates and contributes to voltage signal owing to antiferromagnetic negative spin Hall magnetoresistance-induced spin rectification effect, which has the opposite sign to ferromagnets. The Néel vector in antiferromagnetic α-Fe2O3 is strongly coupled to the magnetization in Y3Fe5O12 buffer, resulting in the convenient control of Néel vectors. ST-AFMR experiment is bolstered by micromagnetic simulations, where both the Néel vector and the canted moment of α-Fe2O3 are in elliptic resonance. These findings shed light on the spin current-induced dynamics in antiferromagnets and represent a step toward electrically controlled antiferromagnetic terahertz emitters.
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Affiliation(s)
- Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Tingwen Guo
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
- LSI, CEA/DRF/IRAMIS, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, F-91128 Palaiseau, France
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Liyang Liao
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Leilei Qiao
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Wenxuan Zhu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Yichi Zhang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Ruyi Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
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2
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Wang H, Madami M, Chen J, Sheng L, Zhao M, Zhang Y, He W, Guo C, Jia H, Liu S, Song Q, Han X, Yu D, Gubbiotti G, Yu H. Tunable Damping in Magnetic Nanowires Induced by Chiral Pumping of Spin Waves. ACS NANO 2021; 15:9076-9083. [PMID: 33977721 DOI: 10.1021/acsnano.1c02250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Spin-current and spin-wave-based devices have been considered as promising candidates for next-generation information transport and processing and wave-based computing technologies with low-power consumption. Spin pumping has attracted tremendous attention and has led to interesting phenomena, including the line width broadening, which indicates damping enhancement due to energy dissipation. Recently, chiral spin pumping of spin waves has been experimentally realized and theoretically studied in magnetic nanostructures. Here, we experimentally observe by Brillouin light scattering (BLS) microscopy the line width broadening sensitive to magnetization configuration in a hybrid metal-insulator nanostructure consisting of a Co nanowire grating dipolarly coupled to a planar continuous YIG film, consistent with the results of the measured hysteresis loop. Tunable line width broadening has been confirmed independently by propagating spin-wave spectroscopy, where unidirectional spin waves are detected. Position-dependent BLS measurement unravels an oscillating-like behavior of magnon populations in Co nanowire grating, which might result from the magnon trap effect. These results are thus attractive for reconfigurable nanomagnonics devices.
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Affiliation(s)
- Hanchen Wang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Marco Madami
- Dipartimento di Fisica e Geologia, Università di Perugia, Perugia I-06123, Italy
| | - Jilei Chen
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Lutong Sheng
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Mingkun Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Yu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Hao Jia
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Song Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Qiuming Song
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Gianluca Gubbiotti
- Dipartimento di Fisica e Geologia, Istituto Officina dei Materiali del Consiglio Nazionale delle Ricerche (IOM-CNR), Sede di Perugia, Via A. Pascoli, Perugia I-06123, Italy
| | - Haiming Yu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
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3
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Sharma Y, Mazza AR, Musico BL, Skoropata E, Nepal R, Jin R, Ievlev AV, Collins L, Gai Z, Chen A, Brahlek M, Keppens V, Ward TZ. Magnetic Texture in Insulating Single Crystal High Entropy Oxide Spinel Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:17971-17977. [PMID: 33822581 DOI: 10.1021/acsami.1c01344] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Magnetic insulators are important materials for a range of next-generation memory and spintronic applications. Structural constraints in this class of devices generally require a clean heterointerface that allows effective magnetic coupling between the insulating layer and the conducting layer. However, there are relatively few examples of magnetic insulators that can be synthesized with surface qualities that would allow these smooth interfaces and precisely tuned interfacial magnetic exchange coupling, which might be applicable at room temperature. In this work, we demonstrate an example of how the configurational complexity in the magnetic insulator layer can be used to realize these properties. The entropy-assisted synthesis is used to create single-crystal (Mg0.2Ni0.2Fe0.2Co0.2Cu0.2)Fe2O4 films on substrates spanning a range of strain states. These films show smooth surfaces, high resistivity, and strong magnetic responses at room temperature. Local and global magnetic measurements further demonstrate how strain can be used to manipulate the magnetic texture and anisotropy. These findings provide insight into how precise magnetic responses can be designed using compositionally complex materials that may find application in next-generation magnetic devices.
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Affiliation(s)
- Yogesh Sharma
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Alessandro R Mazza
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Brianna L Musico
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Elizabeth Skoropata
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Roshan Nepal
- Department of Physics & Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, United States
| | - Rongying Jin
- Department of Physics & Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, United States
| | - Anton V Ievlev
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liam Collins
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Matthew Brahlek
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Veerle Keppens
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Thomas Z Ward
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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4
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Li Y, Zhao C, Amin VP, Zhang Z, Vogel M, Xiong Y, Sklenar J, Divan R, Pearson J, Stiles MD, Zhang W, Hoffmann A, Novosad V. Phase-resolved electrical detection of hybrid magnonic devices. APPLIED PHYSICS LETTERS 2021; 118:10.1063/5.0042784. [PMID: 36452035 PMCID: PMC9706546 DOI: 10.1063/5.0042784] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2021] [Accepted: 05/03/2021] [Indexed: 06/17/2023]
Abstract
We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave (n = 1) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, with Py or YIG dominated excitations, can be detected via the spin rectification signals from the conductive Py layer, providing phase resolution of the coupled dynamics. The phase characterization is also applied to a nonlocally excited Py device, revealing the additional phase shift due to the perpendicular Oersted field. Our results provide a device platform for exploring hybrid magnonic dynamics and probing their phases, which are crucial for implementing coherent information processing with magnon excitations.
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Affiliation(s)
- Yi Li
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
| | - Chenbo Zhao
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
| | - Vivek P. Amin
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742, USA
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Zhizhi Zhang
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
| | - Michael Vogel
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
- Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Strasse 40, Kassel 34132, Germany
| | - Yuzan Xiong
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
- Department of Physics, Oakland University, Rochester, MI 48309, USA
| | - Joseph Sklenar
- Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48202, USA
| | - Ralu Divan
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
| | - John Pearson
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
| | - Mark D. Stiles
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Wei Zhang
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
- Department of Physics, Oakland University, Rochester, MI 48309, USA
| | - Axel Hoffmann
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign Urbana, IL 61801, USA
| | - Valentine Novosad
- Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA†
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5
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Xu H, Wei J, Zhou H, Feng J, Xu T, Du H, He C, Huang Y, Zhang J, Liu Y, Wu HC, Guo C, Wang X, Guang Y, Wei H, Peng Y, Jiang W, Yu G, Han X. High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000513. [PMID: 32176423 DOI: 10.1002/adma.202000513] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2020] [Revised: 03/02/2020] [Accepted: 03/03/2020] [Indexed: 05/17/2023]
Abstract
Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is of great importance for spintronic applications because of its merits in energy-efficient and high-speed operation. An ideal material for SOT applications should possess high charge-spin conversion efficiency and high electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms for SOT study because of their controllability in spin-orbit coupling, conductivity, and energy band topology. Although TMDs show great potentials in SOT applications, the present study is restricted to the mechanically exfoliated samples with small sizes and relatively low conductivities. Here, a manufacturable recipe is developed to fabricate large-area thin films of PtTe2 , a type-II Dirac semimetal, to study their capability of generating SOT. Large SOT efficiency together with high conductivity results in a giant spin Hall conductivity of PtTe2 thin films, which is the largest value among the presently reported TMDs. It is further demonstrated that the SOT from PtTe2 layer can switch a perpendicularly magnetized CoTb layer efficiently. This work paves the way for employing PtTe2 -like TMDs for wafer-scale spintronic device applications.
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Affiliation(s)
- Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Jinwu Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hengan Zhou
- State Key Laboratory of Low-Dimensional Quantum Physics, and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
| | - Jiafeng Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Teng Xu
- State Key Laboratory of Low-Dimensional Quantum Physics, and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
| | - Haifeng Du
- High Magnetic Field Laboratory, Chinese Academy of Sciences, 350 Shushanhu Road, Hefei, Anhui, 230031, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Yuan Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Junwei Zhang
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Yizhou Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yao Guang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yong Peng
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Wanjun Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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6
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Emori S, Yi D, Crossley S, Wisser JJ, Balakrishnan PP, Khodadadi B, Shafer P, Klewe C, N'Diaye AT, Urwin BT, Mahalingam K, Howe BM, Hwang HY, Arenholz E, Suzuki Y. Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films. NANO LETTERS 2018; 18:4273-4278. [PMID: 29792812 DOI: 10.1021/acs.nanolett.8b01261] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Pure spin currents, unaccompanied by dissipative charge flow, are essential for realizing energy-efficient nanomagnetic information and communications devices. Thin-film magnetic insulators have been identified as promising materials for spin-current technology because they are thought to exhibit lower damping compared with their metallic counterparts. However, insulating behavior is not a sufficient requirement for low damping, as evidenced by the very limited options for low-damping insulators. Here, we demonstrate a new class of nanometer-thick ultralow-damping insulating thin films based on design criteria that minimize orbital angular momentum and structural disorder. Specifically, we show ultralow damping in <20 nm thick spinel-structure magnesium aluminum ferrite (MAFO), in which magnetization arises from Fe3+ ions with zero orbital angular momentum. These epitaxial MAFO thin films exhibit a Gilbert damping parameter of ∼0.0015 and negligible inhomogeneous linewidth broadening, resulting in narrow half width at half-maximum linewidths of ∼0.6 mT around 10 GHz. Our findings offer an attractive thin-film platform for enabling integrated insulating spintronics.
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Affiliation(s)
- Satoru Emori
- Department of Physics , Virginia Polytechnic Institute and State University , Blacksburg , Virginia 24060 , United States
| | | | | | | | | | - Behrouz Khodadadi
- Department of Physics , Virginia Polytechnic Institute and State University , Blacksburg , Virginia 24060 , United States
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Christoph Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Alpha T N'Diaye
- Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Brittany T Urwin
- Materials and Manufacturing Directorate , Air Force Research Laboratory , Wright-Patterson Air Force Base , Ohio 45433 , United States
| | - Krishnamurthy Mahalingam
- Materials and Manufacturing Directorate , Air Force Research Laboratory , Wright-Patterson Air Force Base , Ohio 45433 , United States
| | - Brandon M Howe
- Materials and Manufacturing Directorate , Air Force Research Laboratory , Wright-Patterson Air Force Base , Ohio 45433 , United States
| | | | - Elke Arenholz
- Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
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7
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Brächer T, Fabre M, Meyer T, Fischer T, Auffret S, Boulle O, Ebels U, Pirro P, Gaudin G. Detection of Short-Waved Spin Waves in Individual Microscopic Spin-Wave Waveguides Using the Inverse Spin Hall Effect. NANO LETTERS 2017; 17:7234-7241. [PMID: 29148808 DOI: 10.1021/acs.nanolett.7b02458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The miniaturization of complementary metal-oxide-semiconductor (CMOS) devices becomes increasingly difficult due to fundamental limitations and the increase of leakage currents. Large research efforts are devoted to find alternative concepts that allow for a larger data-density and lower power consumption than conventional semiconductor approaches. Spin waves have been identified as a potential technology that can complement and outperform CMOS in complex logic applications, profiting from the fact that these waves enable wave computing on the nanoscale. The practical application of spin waves, however, requires the demonstration of scalable, CMOS compatible spin-wave detection schemes in material systems compatible with standard spintronics as well as semiconductor circuitry. Here, we report on the wave-vector independent detection of short-waved spin waves with wavelengths down to 150 nm by the inverse spin Hall effect in spin-wave waveguides made from ultrathin Ta/Co8Fe72B20/MgO. These findings open up the path for miniaturized scalable interconnects between spin waves and CMOS and the use of ultrathin films made from standard spintronic materials in magnonics.
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Affiliation(s)
- T Brächer
- University Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC , F-38000 Grenoble, France
| | - M Fabre
- University Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC , F-38000 Grenoble, France
| | - T Meyer
- Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern , 67663 Kaiserslautern, Germany
| | - T Fischer
- Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern , 67663 Kaiserslautern, Germany
- Graduate School Materials Science in Mainz , Gottlieb-Daimler-Strasse 47, D-67663 Kaiserslautern, Germany
| | - S Auffret
- University Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC , F-38000 Grenoble, France
| | - O Boulle
- University Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC , F-38000 Grenoble, France
| | - U Ebels
- University Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC , F-38000 Grenoble, France
| | - P Pirro
- Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern , 67663 Kaiserslautern, Germany
| | - G Gaudin
- University Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC , F-38000 Grenoble, France
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8
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Hellman F, Hoffmann A, Tserkovnyak Y, Beach GSD, Fullerton EE, Leighton C, MacDonald AH, Ralph DC, Arena DA, Dürr HA, Fischer P, Grollier J, Heremans JP, Jungwirth T, Kimel AV, Koopmans B, Krivorotov IN, May SJ, Petford-Long AK, Rondinelli JM, Samarth N, Schuller IK, Slavin AN, Stiles MD, Tchernyshyov O, Thiaville A, Zink BL. Interface-Induced Phenomena in Magnetism. REVIEWS OF MODERN PHYSICS 2017; 89:025006. [PMID: 28890576 PMCID: PMC5587142 DOI: 10.1103/revmodphys.89.025006] [Citation(s) in RCA: 192] [Impact Index Per Article: 27.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.
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Affiliation(s)
- Frances Hellman
- Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Axel Hoffmann
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Yaroslav Tserkovnyak
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Geoffrey S D Beach
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Eric E Fullerton
- Center for Memory and Recording Research, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0401, USA
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Allan H MacDonald
- Department of Physics, University of Texas at Austin, Austin, Texas 78712-0264, USA
| | - Daniel C Ralph
- Physics Department, Cornell University, Ithaca, New York 14853, USA; Kavli Institute at Cornell, Cornell University, Ithaca, New York 14853, USA
| | - Dario A Arena
- Department of Physics, University of South Florida, Tampa, Florida 33620-7100, USA
| | - Hermann A Dürr
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA
| | - Peter Fischer
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA; Physics Department, University of California, 1156 High Street, Santa Cruz, California 94056, USA
| | - Julie Grollier
- Unité Mixte de Physique CNRS/Thales and Université Paris Sud 11, 1 Avenue Fresnel, 91767 Palaiseau, France
| | - Joseph P Heremans
- Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, USA; Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA; Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - Tomas Jungwirth
- Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Praha 6, Czech Republic; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Alexey V Kimel
- Radboud University, Institute for Molecules and Materials, Nijmegen 6525 AJ, The Netherlands
| | - Bert Koopmans
- Department of Applied Physics, Center for NanoMaterials, COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Ilya N Krivorotov
- Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
| | - Steven J May
- Department of Materials Science & Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA
| | - Amanda K Petford-Long
- Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, USA; Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, USA
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - Nitin Samarth
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California, San Diego, La Jolla, California 92093, USA; Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093, USA
| | - Andrei N Slavin
- Department of Physics, Oakland University, Rochester, Michigan 48309, USA
| | - Mark D Stiles
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6202, USA
| | - Oleg Tchernyshyov
- Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - André Thiaville
- Laboratoire de Physique des Solides, UMR CNRS 8502, Université Paris-Sud, 91405 Orsay, France
| | - Barry L Zink
- Department of Physics and Astronomy, University of Denver, Denver, CO 80208, USA
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9
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Jungfleisch MB, Ding J, Zhang W, Jiang W, Pearson JE, Novosad V, Hoffmann A. Insulating Nanomagnets Driven by Spin Torque. NANO LETTERS 2017; 17:8-14. [PMID: 28073261 DOI: 10.1021/acs.nanolett.6b02794] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Magnetic insulators, such as yttrium iron garnet (Y3Fe5O12), are ideal materials for ultralow power spintronics applications due to their low energy dissipation and efficient spin current generation and transmission. Recently, it has been realized that spin dynamics can be driven very effectively in micrometer-sized Y3Fe5O12/Pt heterostructures by spin-Hall effects. We demonstrate here the excitation and detection of spin dynamics in Y3Fe5O12/Pt nanowires by spin-torque ferromagnetic resonance. The nanowires defined via electron-beam lithography are fabricated by conventional room temperature sputtering deposition on Gd3Ga5O12 substrates and lift-off. We observe field-like and antidamping-like torques acting on the magnetization precession, which are due to simultaneous excitation by Oersted fields and spin-Hall torques. The Y3Fe5O12/Pt nanowires are thoroughly examined over a wide frequency and power range. We observe a large change in the resonance field at high microwave powers, which is attributed to a decreasing effective magnetization due to microwave absorption. These heating effects are much more pronounced in the investigated nanostructures than in comparable micron-sized samples. By comparing different nanowire widths, the importance of geometrical confinements for magnetization dynamics becomes evident: quantized spin-wave modes across the width of the wires are observed in the spectra. Our results are the first stepping stones toward the realization of integrated magnonic logic devices based on insulators, where nanomagnets play an essential role.
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Affiliation(s)
- Matthias B Jungfleisch
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Junjia Ding
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Wei Zhang
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
- Department of Physics, Oakland University , Rochester, Michigan 48309, United States
| | - Wanjun Jiang
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University and Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - John E Pearson
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Valentine Novosad
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Axel Hoffmann
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
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10
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Direct observation of dynamic modes excited in a magnetic insulator by pure spin current. Sci Rep 2016; 6:32781. [PMID: 27608533 PMCID: PMC5016739 DOI: 10.1038/srep32781] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/12/2016] [Accepted: 08/11/2016] [Indexed: 11/24/2022] Open
Abstract
Excitation of magnetization dynamics by pure spin currents has been recently recognized as an enabling mechanism for spintronics and magnonics, which allows implementation of spin-torque devices based on low-damping insulating magnetic materials. Here we report the first spatially-resolved study of the dynamic modes excited by pure spin current in nanometer-thick microscopic insulating Yttrium Iron Garnet disks. We show that these modes exhibit nonlinear self-broadening preventing the formation of the self-localized magnetic bullet, which plays a crucial role in the stabilization of the single-mode magnetization oscillations in all-metallic systems. This peculiarity associated with the efficient nonlinear mode coupling in low-damping materials can be among the main factors governing the interaction of pure spin currents with the dynamic magnetization in high-quality magnetic insulators.
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