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Kruskopf M, Bauer S, Pimsut Y, Chatterjee A, Patel DK, Rigosi AF, Elmquist RE, Pierz K, Pesel E, Götz M, Schurr J. Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology. IEEE TRANSACTIONS ON ELECTRON DEVICES 2021; 68:10.1109/ted.2021.3082809. [PMID: 36452065 PMCID: PMC9706404 DOI: 10.1109/ted.2021.3082809] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A new type of graphene-based quantum Hall standards is tested for electrical quantum metrology applications at alternating current (ac) and direct current (dc). The devices are functionalized with Cr(CO)3 to control the charge carrier density and have branched Hall contacts based on NbTiN superconducting material. The work is an in-depth study about the characteristic capacitances and related losses in the ac regime of the devices and about their performance during precision resistance measurements at dc and ac.
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Affiliation(s)
- Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Stephan Bauer
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Yaowaret Pimsut
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany; National Metrology Institute, Pathum Thani 12120, Thailand
| | - Atasi Chatterjee
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Dinesh K Patel
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Albert F Rigosi
- National Institute of Standards and Technology, Gaithersburg, MD 20899 USA
| | | | - Klaus Pierz
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Eckart Pesel
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Martin Götz
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Jürgen Schurr
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
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He H, Kim KH, Danilov A, Montemurro D, Yu L, Park YW, Lombardi F, Bauch T, Moth-Poulsen K, Iakimov T, Yakimova R, Malmberg P, Müller C, Kubatkin S, Lara-Avila S. Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants. Nat Commun 2018; 9:3956. [PMID: 30262825 PMCID: PMC6160407 DOI: 10.1038/s41467-018-06352-5] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2018] [Accepted: 08/31/2018] [Indexed: 11/12/2022] Open
Abstract
Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC—achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly(methyl-methacrylate)—proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral, large-area graphene with carrier mobilities ~70 000 cm2 V−1 s−1 at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin-coating wafer-scale substrates in ambient conditions, opens up a scalable technological route toward expanding the functionality of 2D materials. Incorporating dopants in the graphene lattice to tune its electronic properties is a challenging task. Here, the authors report a strategy to dope epitaxial large-area graphene on SiC by means of spin-coating deposition of F4TCNQ polymers in ambient conditions.
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Affiliation(s)
- Hans He
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden
| | - Kyung Ho Kim
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden.,Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Andrey Danilov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden
| | - Domenico Montemurro
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden
| | - Liyang Yu
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Yung Woo Park
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.,Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea.,Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Floriana Lombardi
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden
| | - Thilo Bauch
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden
| | - Kasper Moth-Poulsen
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Tihomir Iakimov
- Department of Physics, Chemistry and Biology, Linkoping University, 581 83, Linköping, Sweden
| | - Rositsa Yakimova
- Department of Physics, Chemistry and Biology, Linkoping University, 581 83, Linköping, Sweden
| | - Per Malmberg
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Christian Müller
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Sergey Kubatkin
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden
| | - Samuel Lara-Avila
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden. .,National Physical Laboratory, Hampton Road, Teddington, TW11 0LW, UK.
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Kruskopf M, Elmquist RE. Epitaxial graphene for quantum resistance metrology. METROLOGIA 2018; 55:10.1088/1681-7575/aacd23. [PMID: 30996479 PMCID: PMC6463316 DOI: 10.1088/1681-7575/aacd23] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer graphene growth methods for uniform material properties and optimized device fabrication techniques. Precision measurements of the quantized Hall resistance showing the advantage of graphene over GaAs-based resistance standards demonstrate the remarkable achievements realized by the research community. This work provides an overview over the state-of-the-art technologies in this field.
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Affiliation(s)
- Mattias Kruskopf
- National Institute of Standards and Technology, Fundamental Electrical Measurements, 100 Bureau Drive, Gaithersburg, MD, United States of America
- University of Maryland, Joint Quantum Institute, College Park, MD, United States of America
| | - Randolph E Elmquist
- National Institute of Standards and Technology, Fundamental Electrical Measurements, 100 Bureau Drive, Gaithersburg, MD, United States of America
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