Quantum Coherent Multielectron Processes in an Atomic Scale Contact

Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

Electrically connected and plasmonically enhanced molecular junctions combine the optical functionalities of high field confinement and enhancement (cavity function), and of high radiative efficiency (antenna function) with the electrical functionalities of molecular transport. Such combined optical and electrical probes have proven useful for the fundamental understanding of metal-molecule contacts and contribute to the development of nanoscale optoelectronic devices including ultrafast electronics and nanosensors. Here, we employ a self-assembled metal-molecule-metal junction with a nanoparticle bridge to investigate correlated fluctuations in conductance and tunneling-induced light emission at room temperature. Despite the presence of hundreds of molecules in the junction, the electrical conductance and light emission are both highly sensitive to atomic-scale fluctuations-a phenomenology reminiscent of picocavities observed in Raman scattering and of luminescence blinking from photoexcited plasmonic junctions. Discrete steps in conductance associated with fluctuating emission intensities through the multiple plasmonic modes of the junction are consistent with a finite number of randomly localized, point-like sources dominating the optoelectronic response. Contrasting with these microscopic fluctuations, the overall plasmonic and electronic functionalities of our devices feature long-term survival at room temperature and under an electrical bias of a few volts, allowing for measurements over several months.

Upconversion electroluminescence in 2D semiconductors integrated with plasmonic tunnel junctions

Plasmonic tunnel junctions are a unique electroluminescent system in which light emission occurs via an interplay between tunnelling electrons and plasmonic fields instead of electron-hole recombination as in conventional light-emitting diodes. It was previously shown that placing luminescent molecules in the tunneling pathway of nanoscopic tunnel junctions results in peculiar upconversion electroluminescence where the energy of emitted photons exceeds that of excitation electrons. Here we report the observation of upconversion electroluminescence in macroscopic van der Waals plasmonic tunnel junctions comprising gold and few-layer graphene electrodes separated by a ~2-nm-thick hexagonal boron nitride tunnel barrier and a monolayer semiconductor. We find that the semiconductor ground exciton emission is triggered at excitation electron energies lower than the semiconductor optical gap. Interestingly, this upconversion is reached in devices operating at a low conductance (<10-6 S) and low power density regime (<102 W cm-2), defying explanation through existing proposed mechanisms. By examining the scaling relationship between plasmonic and excitonic emission intensities, we elucidate the role of inelastic electron tunnelling dipoles that induce optically forbidden transitions in the few-layer graphene electrode and ultrafast hot carrier transfer across the van der Waals interface.

Anomalously bright single-molecule upconversion electroluminescence

Efficient upconversion electroluminescence is highly desirable for a broad range of optoelectronic applications, yet to date, it has been reported only for ensemble systems, while the upconversion electroluminescence efficiency remains very low for single-molecule emitters. Here we report on the observation of anomalously bright single-molecule upconversion electroluminescence, with emission efficiencies improved by more than one order of magnitude over previous studies, and even stronger than normal-bias electroluminescence. Intuitively, the improvement is achieved via engineering the energy-level alignments at the molecule-substrate interface so as to activate an efficient spin-triplet mediated upconversion electroluminescence mechanism that only involves pure carrier injection steps. We further validate the intuitive picture with the construction of delicate electroluminescence diagrams for the excitation of single-molecule electroluminescence, allowing to readily identify the prerequisite conditions for producing efficient upconversion electroluminescence. These findings provide deep insights into the microscopic mechanism of single-molecule upconversion electroluminescence and organic electroluminescence in general.

Electroluminescence as a Probe of Strong Exciton-Plasmon Coupling in Few-Layer WSe2

The manipulation of coupled quantum excitations is of fundamental importance in realizing novel photonic and optoelectronic devices. We use electroluminescence to probe plasmon-exciton coupling in hybrid structures consisting of a nanoscale plasmonic tunnel junction and few-layer two-dimensional transition-metal dichalcogenide transferred onto the junction. The resulting hybrid states act as a novel dielectric environment that affects the radiative recombination of hot carriers in the plasmonic nanostructure. We determine the plexcitonic spectrum from the electroluminescence and find Rabi splittings exceeding 50 meV in the strong coupling regime. Our experimental findings are supported by electromagnetic simulations that enable us to explore systematically and in detail the emergence of plexciton polaritons as well as the polarization characteristics of their far-field emission. Electroluminescence modulated by plexciton coupling provides potential applications for engineering compact photonic devices with tunable optical and electrical properties.

Overbias Photon Emission from Light-Emitting Devices Based on Monolayer Transition Metal Dichalcogenides

Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emission at photon energies higher than the applied electrostatic potential, so-called overbias emission. Here we report overbias emission for potentials that are near half of the optical bandgap energy in TMD-based tunneling LEDs. We show that this emission is not thermal in nature but consistent with exciton generation via a two-electron coherent tunneling process.

Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization

We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.

Tuning Light Emission Crossovers in Atomic-Scale Aluminum Plasmonic Tunnel Junctions

Atomic-sized plasmonic tunnel junctions are of fundamental interest, with great promise as the smallest on-chip light sources in various optoelectronic applications. Several mechanisms of light emission in electrically driven plasmonic tunnel junctions have been proposed, from single-electron or higher-order multielectron inelastic tunneling to recombination from a steady-state population of hot carriers. By progressively altering the tunneling conductance of an aluminum junction, we tune the dominant light emission mechanism through these possibilities for the first time, finding quantitative agreement with theory in each regime. Improved plasmonic resonances in the energy range of interest increase photon yields by 2 orders of magnitude. These results demonstrate that the dominant emission mechanism is set by a combination of tunneling rate, hot carrier relaxation time scales, and junction plasmonic properties.

Atomic-Scale Structural Fluctuations of a Plasmonic Cavity

Optical spectromicroscopies, which can reach atomic resolution due to plasmonic enhancement, are perturbed by spontaneous intensity modifications. Here, we study such fluctuations in plasmonic electroluminescence at the single-atom limit profiting from the precision of a low-temperature scanning tunneling microscope. First, we investigate the influence of a controlled single-atom transfer from the tip to the sample on the plasmonic properties of the junction. Next, we form a well-defined atomic contact of several quanta of conductance. In contact, we observe changes of the electroluminescence intensity that can be assigned to spontaneous modifications of electronic conductance, plasmonic excitation, and optical antenna properties all originating from minute atomic rearrangements at or near the contact. Our observations are relevant for the understanding of processes leading to spontaneous intensity variations in plasmon-enhanced atomic-scale spectroscopies such as intensity blinking in picocavities.

Electronic Temperature and Two-Electron Processes in Overbias Plasmonic Emission from Tunnel Junctions

The accurate determination of electronic temperatures in metallic nanostructures is essential for many technological applications, like plasmon-enhanced catalysis or lithographic nanofabrication procedures. In this Letter, we demonstrate that the electronic temperature can be accurately measured by the shape of the tunnel electroluminescence emission edge in tunnel plasmonic nanocavities, which follows a universal thermal distribution with the bias voltage as the chemical potential of the photon population. A significant deviation between electronic and lattice temperatures is found below 30 K for tunnel currents larger than 15 nA. This deviation is rationalized as the result of a two-electron process in which the second electron excites plasmon modes with an energy distribution that reflects the higher temperature following the first tunneling event. These results dispel a long-standing controversy on the nature of overbias emission in tunnel junctions and adds a new method for the determination of electronic temperatures and quasiparticle dynamics.

Thousand-fold Increase in Plasmonic Light Emission via Combined Electronic and Optical Excitations

Surface plasmon enhanced processes and hot-carrier dynamics in plasmonic nanostructures are of great fundamental interest to reveal light-matter interactions at the nanoscale. Using plasmonic tunnel junctions as a platform supporting both electrically and optically excited localized surface plasmons, we report a much greater (over 1000× ) plasmonic light emission at upconverted photon energies under combined electro-optical excitation, compared with electrical or optical excitation separately. Two mechanisms compatible with the form of the observed spectra are interactions of plasmon-induced hot carriers and electronic anti-Stokes Raman scattering. Our measurement results are in excellent agreement with a theoretical model combining electro-optical generation of hot carriers through nonradiative plasmon excitation and hot-carrier relaxation. We also discuss the challenge of distinguishing relative contributions of hot carrier emission and the anti-Stokes electronic Raman process. This observed increase in above-threshold emission in plasmonic systems may open avenues in on-chip nanophotonic switching and hot-carrier photocatalysis.

Light Emission in Metal-Semiconductor Tunnel Junctions: Direct Evidence for Electron Heating by Plasmon Decay

We study metal-insulator-semiconductor tunnel junctions where the metal electrode is a patterned gold layer, the insulator is a thin layer of Al₂O₃, and the semiconductor is p-type silicon. We observe light emission due to plasmon-assisted inelastic tunneling from the metal to the silicon valence band. The emission cutoff shifts to higher energies with increasing voltage, a clear signature of electrically driven plasmons. The cutoff energy exceeds the applied voltage, and a large fraction of the emission is above the threshold, ℏω > eV. We find that the emission spectrum manifests the Fermi-Dirac distribution of the electrons in the gold electrode. This distribution can be used to determine the effective electron temperature, T_e, which is shown to have a linear dependence on the applied voltage. The strong correlation of T_e with the plasmon energy serves as evidence that the mechanism for heating the electrons is plasmon decay at the source metal electrode.

Scanning Tunneling Microscopy-Induced Light Emission and I(V) Study of Optical Near-Field Properties of Single Plasmonic Nanoantennas

Electrically driven plasmonic nanoantennas can be integrated as a local source of the optical signal of advanced photonic schemes for on-chip data processing. The inelastic electron tunneling provides the photon generation or launch of surface plasmon waves. This process can be enhanced by the local density of optical states of nanoantennas. In this paper, we used scanning tunnel microscopy-induced light emission to probe the local optoelectronic properties of single gold nanodiscs. The electromagnetic field distribution in the vicinity of plasmonic structures was investigated with high spatial resolution. The obtained photon maps reveal the nonuniform distribution of electromagnetic near-fields, which is consistent with nanoantenna optical modes. Also, the analysis of derived I(V) curves showed a direct correlation between the nanoantenna optical states and the appearance of features on current-voltage characteristics.

Too Cool for Blackbody Radiation: Overbias Photon Emission in Ambient STM Due to Multielectron Processes

Light emission from tunnel junctions are a potential photon source for nanophotonic applications. Surprisingly, the photons emitted can have energies exceeding the energy supplied to the electrons by the bias. Three mechanisms for generating these so-called overbias photons have been proposed, but the relationship between these mechanisms has not been clarified. In this work, we argue that multielectron processes provide the best framework for understanding overbias light emission in tunnel junctions. Experimentally, we demonstrate for the first time that the superlinear dependence of emission on conductance predicted by this theory is robust to the temperature of the tunnel junction, indicating that tunnel junctions are a promising candidate for electrically driven broadband photon sources.

Electrically Driven Hot-Carrier Generation and Above-Threshold Light Emission in Plasmonic Tunnel Junctions

Above-threshold light emission from plasmonic tunnel junctions, when emitted photons have energies significantly higher than the energy scale of incident electrons, has attracted much recent interest in nano-optics, while the underlying physics remains elusive. We examine above-threshold light emission in electromigrated tunnel junctions. Our measurements over a large ensemble of devices demonstrate a giant (∼10⁴) material-dependent photon yield (emitted photons per incident electrons). This dramatic effect cannot be explained only by the radiative field enhancement due to localized plasmons in the tunneling gap. Emission is well described by a Boltzmann spectrum with an effective temperature exceeding 2000 K, coupled to a plasmon-modified photonic density of states. The effective temperature is approximately linear in the applied bias, consistent with a suggested theoretical model describing hot-carrier dynamics driven by nonradiative decay of electrically excited localized plasmons. Electrically generated hot carriers and nontraditional light emission could open avenues for active photochemistry, optoelectronics, and quantum optics.

Triplet Excitation and Electroluminescence from a Supramolecular Monolayer Embedded in a Boron Nitride Tunnel Barrier

We show that ordered monolayers of organic molecules stabilized by hydrogen bonding on the surface of exfoliated few-layer hexagonal boron nitride (hBN) flakes may be incorporated into van der Waals heterostructures with integral few-layer graphene contacts forming a molecular/two-dimensional hybrid tunneling diode. Electrons can tunnel through the hBN/molecular barrier under an applied voltage V_SD, and we observe molecular electroluminescence from an excited singlet state with an emitted photon energy hν > eV_SD, indicating upconversion by energies up to ∼1 eV. We show that tunneling electrons excite embedded molecules into singlet states in a two-step process via an intermediate triplet state through inelastic scattering and also observe direct emission from the triplet state. These heterostructures provide a solid-state device in which spin-triplet states, which cannot be generated by optical transitions, can be controllably excited and provide a new route to investigate the physics, chemistry, and quantum spin-based applications of triplet generation, emission, and molecular photon upconversion.

Optical antennas driven by quantum tunneling: a key issues review

Analogous to radio- and microwave antennas, optical nanoantennas are devices that receive and emit radiation at optical frequencies. Until recently, the realization of electrically driven optical antennas was an outstanding challenge in nanophotonics. In this review we discuss and analyze recent reports in which quantum tunneling-specifically inelastic electron tunneling-is harnessed as a means to convert electrical energy into photons, mediated by optical antennas. To aid this analysis we introduce the fundamentals of optical antennas and inelastic electron tunneling. Our discussion is focused on recent progress in the field and on future directions and opportunities.

Spin-Triplet-Mediated Up-Conversion and Crossover Behavior in Single-Molecule Electroluminescence

Scanning-tunneling-microscope-induced light emission serves as a powerful approach in revealing and manipulating the optical properties of molecular species, intermolecular energy transfer, and plasmon-molecule coupling. Earlier studies have established the existence of molecular up-conversion electroluminescence in diverse situations, but the underlying microscopic mechanisms are still under active debate, dominated by intermolecular triplet-triplet annihilation and plasmonic pumping. Here we report on the experimental realization of up-conversion electroluminescence from a prototypical single phthalocyanine molecule, allowing us to unambiguously rule out mechanisms based on intermolecular coupling and also offering unprecedented opportunities to elucidate much richer characteristics unforeseen in previous studies. In particular, the bias-dependent emission intensity displays three distinct regions with different nonlinear current dependences, which can be attributed to crossover behavior caused by the interplay between inelastic electron scattering and carrier-injection processes. We also develop a microscopic description to capture the essential physics involved in up-conversion electroluminescence mediated by a proper intermediate spin-triplet state.

Photon superbunching from a generic tunnel junction

Generating time-correlated photon pairs at the nanoscale is a prerequisite to creating highly integrated optoelectronic circuits that perform quantum computing tasks based on heralded single photons. Here, we demonstrate fulfilling this requirement with a generic tip-surface metal junction. When the junction is luminescing under DC bias, inelastic tunneling events of single electrons produce a stream of visible photons of plasmonic origin whose superbunching index is 17 (improved to a record of 70 by the authors during publication) when measured with a 53-ps instrumental resolution limit. The effect is driven electrically, rather than optically. This discovery has immediate and profound implications for quantum optics and cryptography, notwithstanding its fundamental importance to basic science and its ushering in of heralded photon experiments on the nanometer scale.

Light from van der Waals quantum tunneling devices

The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and optical properties in atomic scale volumes. Here we introduce a device architecture that allows for the disentanglement of electronic and photonic pathways—van der Waals quantum tunneling devices. The electronic properties are defined by a stack of two-dimensional atomic crystals whereas the optical properties are controlled via an external photonic architecture. In van der Waals heterostructures made of gold, hexagonal boron nitride and graphene we find that inelastic tunneling results in the emission of photons and surface plasmon polaritons. By coupling these heterostructures to optical nanocube antennas we achieve resonant enhancement of the photon emission rate in narrow frequency bands by four orders of magnitude. Our results lead the way towards a new generation of nanophotonic devices that are driven by quantum tunneling.

Electrical and optical properties of light emitting devices driven by quantum tunneling are closely intertwined. Parzefall et al. show that these properties can be individually controlled by cointegrating van der Waals heterostructures with optical antennas.

Tunneling time probed by quantum shot noise

In typical metallic tunnel junctions, the tunneling events occur on a femtosecond timescale. An estimation of this time requires current measurements at optical frequencies and remains challenging. However, it has been known for more than 40 years that as soon as the bias voltage exceeds one volt, the junction emits infrared radiation as an electrically driven optical antenna. We demonstrate here that the photon emission results from the fluctuations of the current inside the tunneling barrier. Photon detection is then equivalent to a measurement of the current fluctuations at optical frequencies, allowing to probe the tunneling time. Based on this idea, we perform optical spectroscopy and electronic current fluctuation measurements in the far from equilibrium regime. Our experimental data are in very good agreement with theoretical predictions based on the Landauer Büttiker scattering formalism. By combining the optics and the electronics, we directly estimate the so-called traversal time.

Fast quantitative optical detection of heat dissipation by surface plasmon polaritons

Heat management at the nanoscale is an issue of increasing importance. In optoelectronic devices the transport and decay of plasmons contribute to the dissipation of heat. By comparison of experimental data and simulations we demonstrate that it is possible to gain quantitative information about excitation, propagation and decay of surface plasmon polaritons (SPPs) in a thin gold stripe supported by a silicon membrane. The temperature-dependent optical transmissivity of the membrane is used to determine the temperature distribution around the metal stripe with high spatial and temporal resolution. This method is complementary to techniques where the propagation of SPPs is monitored optically, and provides additional information which is not readily accessible by other means. In particular, we demonstrate that the thermal conductivity of the membrane can also be derived from our analysis. The results presented here show the high potential of this tool for heat management studies in nanoscale devices.

Electron-induced photon emission above the quantum cutoff due to time-energy uncertainty

The light emission from a tunneling junction induced by tunneling electrons has been studied around the cutoff at hν=eV_t. The emitted photons are found to exceed the excitation energy provided by the energy of the tunneling electrons. The experiments have been performed by a low- temperature scanning tunneling microscope at 80 K for an Ag(111) surface and an Ag-covered PtIr tip. A detailed analysis of the emission spectra reveals that the findings cannot be explained by the thermal broadening of the electron Fermi distribution alone. However, a correct description is found if a finite lifetime of the excited states in the range of 30-80 fs is included.