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Han S, Ye L, Li Y, Huang B. Theoretical Understanding of Nonlinear Optical Properties in Solids: A Perspective. J Phys Chem Lett 2024:3323-3335. [PMID: 38498006 DOI: 10.1021/acs.jpclett.4c00360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/19/2024]
Abstract
Nonlinear optical (NLO) crystals have become a hot topic in chemical science and material physics, due to their essential role in laser technology, optical information, optoelectronics, and precision measurements. In this Perspective, we provide an overview of recent advances in second-order nonlinear optics, with a focus on two critical topics: second harmonic generation (SHG) and the bulk photovoltaic effect (BPVE). For SHG, we discuss recent progress in deep-ultraviolet (DUV) materials, highlighting their structural characteristics and nonlinear groups that contribute to their exceptional performance. For BPVE, we concentrate on the emerging field of low-dimensional materials, emphasizing their potential in a shift current. Additionally, we discuss the development of regulation approaches for NLO materials, which is vital for their practical application. Finally, we address the outlook for the field, including the challenges that must be overcome to further advance NLO materials research.
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Affiliation(s)
- Shengru Han
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Liangting Ye
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Yang Li
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
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2
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Wang Y, Rui J, Song H, Yuan Z, Huang X, Liu J, Zhou J, Li C, Wang H, Wu S, Chen R, Yang M, Gao Q, Xie X, Xing X, Huang L. Antithermal Quenching Upconversion Luminescence via Suppressed Multiphonon Relaxation in Positive/Negative Thermal Expansion Core/Shell NaYF 4:Yb/Ho@ScF 3 Nanoparticles. J Am Chem Soc 2024; 146:6530-6535. [PMID: 38410847 DOI: 10.1021/jacs.3c10886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
Thermal quenching (TQ) has been naturally entangling with luminescence since its discovery, and lattice vibration, which is characterized as multiphonon relaxation (MPR), plays a critical role. Considering that MPR may be suppressed under exterior pressure, we have designed a core/shell upconversion luminescence (UCL) system of α-NaYF4:Yb/Ln@ScF3 (Ln = Ho, Er, and Tm) with positive/negative thermal expansion behavior so that positive thermal expansion of the core will be restrained by negative thermal expansion of the shell when heated. This imposed pressure on the crystal lattice of the core suppresses MPR, reduces the amount of energy depleted by TQ, and eventually saves more energy for luminescing, so that anti-TQ or even thermally enhanced UCL is obtained.
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Affiliation(s)
- Yilin Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Jiahui Rui
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
| | - Hao Song
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
| | - Ze Yuan
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
| | - Xiaoqiao Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
| | - Jingyao Liu
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
| | - Jie Zhou
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
| | - Ce Li
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
| | - Hui Wang
- School of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Shuaihao Wu
- School of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Ran Chen
- School of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Mingdi Yang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Qilong Gao
- International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Xiaoji Xie
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
| | - Xianran Xing
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Ling Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- School of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, China
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3
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Hou C, Shen Y, Xin J, Guo Y, Wang Q. Three-dimensional porous borocarbonitride composed of pentagonal motifs as a high-performance pyroelectric material. Phys Chem Chem Phys 2023; 25:28965-28973. [PMID: 37859546 DOI: 10.1039/d3cp02997b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Pyroelectric materials have been attracting significant attention due to their intrinsic and permanent polarization, where the induced polarization is not associated with specific conditions, such as ferroelectric phase transition, strain gradient, dopants, and electric field. Thus, these materials have great potential for wide applications in energy conversion. Here, we propose a new 3D porous borocarbonitride termed PH-BCN, which is composed of pentagonal motifs with intrinsic polarization along the [0001] direction. Based on first-principles calculations, we show that PH-BCN possesses a record high longitudinal electromechanical coupling coefficient with the value of k33 = 97.99%, a remarkably strong SHG response (χ(2)xzx(0) = χ(2)yzy(0) = χ(2)zxx(0) = χ(2)zyy(0) = -6.23 pm V-1 and χ(2)zzz(0) = 21.21 pm V-1), and a record high shift current value of 908.58 μA V-2 due to the intrinsic vertical polarization. This study expands the family of pentagon-based materials, and may open a new frontier in the design of high-performance pyroelectric materials as well.
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Affiliation(s)
- Changsheng Hou
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Yiheng Shen
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Jiaqi Xin
- Department of Physics, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Yaguang Guo
- Department of Physics, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Qian Wang
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
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4
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Liang Z, Zhou X, Zhang L, Yu XL, Lv Y, Song X, Zhou Y, Wang H, Wang S, Wang T, Shum PP, He Q, Liu Y, Zhu C, Wang L, Chen X. Strong bulk photovoltaic effect in engineered edge-embedded van der Waals structures. Nat Commun 2023; 14:4230. [PMID: 37454221 DOI: 10.1038/s41467-023-39995-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 07/07/2023] [Indexed: 07/18/2023] Open
Abstract
Bulk photovoltaic effect (BPVE), a second-order nonlinear optical effect governed by the quantum geometric properties of materials, offers a promising approach to overcome the Shockley-Quiesser limit of traditional photovoltaic effect and further improve the efficiency of energy harvesting. Here, we propose an effective platform, the nano edges embedded in assembled van der Waals (vdW) homo- or hetero-structures with strong symmetry breaking, low dimensionality and abundant species, for BPVE investigations. The BPVE-induced photocurrents strongly depend on the orientation of edge-embedded structures and polarization of incident light. Reversed photocurrent polarity can be observed at left and right edge-embedded structures. Our work not only visualizes the unique optoelectronic effect in vdW nano edges, but also provides an effective strategy for achieving BPVE in engineered vdW structures.
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Affiliation(s)
- Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China.
- International Quantum Academy, Shenzhen, China.
| | - Yan Lv
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Han Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Shuo Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Perry Ping Shum
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Yanjun Liu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
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Tiwari RP. Enhanced shift current bulk photovoltaic effect in ferroelectric Rashba semiconductor α-GeTe: ab initiostudy from three- to two-dimensional van der Waals layered structures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:435404. [PMID: 35985305 DOI: 10.1088/1361-648x/ac8b50] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 08/19/2022] [Indexed: 06/15/2023]
Abstract
The ferroelectric Rashba semiconductors (FERSCs) are endowed with a unique combination of ferroelectricity and the spin degree of freedom, resulting in a long carrier lifetime and impressive bulk photovoltaic (BPV) efficiency that reached 25% in organometal halide perovskites. The BPV efficiency can be further improved by using low-dimensional ferroelectrics however, it is inhibited by the ferroelectric instability in low-dimensional perovskites and toxicity along with phase instability of the lead-halide perovskites. To address these challenges, theα-GeTe could be of great importance which is the simplest known lead-free FERSC with an intrinsic layered structure. Therefore, in this work, we investigate the BPV properties of three- to two-dimensional van der Waals structures ofα-GeTe by calculating the shift current (SHC). We predict that the mono (1.56 Å) and bi-layers (5.44-6.14 Å)α-GeTe with the buckled honeycomb structure are dynamically stable and possess the characteristic features of the bulk up to the nanoscale limit. The SHC of ∼70μA V-2is calculated in bulk α-GeTe which is 20 times larger than that obtained in organometal halides in the visible light. The SHC increases with decreasing the number of layers, reaching a maximum amplitude of ∼300μA V-2at 2.67 eV in the monolayer which is more than double that obtained in monolayer GeS. We find that the SHC in monolayer α-GeTe can be further enhanced and redshifted by applying a compressive strain; which is correlated with the strong absorption of thexx-polarized light, stimulated by the more delocalized px/yorbital character of the density of states. Furthermore, in the bilayer structures, the magnitude of the SHC is sensitive to the layers' stacking arrangement and a maximum SHC (∼250μA V-2) can be achieved with an AB-type stacking arrangement. Combining these results with the benefits of being environmental-friendly material makesα-GeTe a good candidate for next-generation solar cells application.
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6
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Dai Z, Schankler AM, Gao L, Tan LZ, Rappe AM. Phonon-Assisted Ballistic Current from First-Principles Calculations. PHYSICAL REVIEW LETTERS 2021; 126:177403. [PMID: 33988454 DOI: 10.1103/physrevlett.126.177403] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2020] [Accepted: 03/19/2021] [Indexed: 05/10/2023]
Abstract
The bulk photovoltaic effect (BPVE) refers to current generation due to illumination by light in a homogeneous bulk material lacking inversion symmetry. In addition to the intensively studied shift current, the ballistic current, which originates from asymmetric carrier generation due to scattering processes, also constitutes an important contribution to the overall kinetic model of the BPVE. In this Letter, we use a perturbative approach to derive a formula for the ballistic current resulting from the intrinsic electron-phonon scattering in a form amenable to first-principles calculation. We then implement the theory and calculate the ballistic current of the prototypical BPVE material BaTiO_{3} using quantum-mechanical density functional theory. The magnitude of the ballistic current is comparable to that of the shift current, and the total spectrum (shift plus ballistic) agrees well with the experimentally measured photocurrents. Furthermore, we show that the ballistic current is sensitive to structural change, which could benefit future photovoltaic materials design.
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Affiliation(s)
- Zhenbang Dai
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
| | - Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
| | - Lingyuan Gao
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
| | - Liang Z Tan
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
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7
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Fei R, Yu S, Lu Y, Zhu L, Yang L. Switchable Enhanced Spin Photocurrent in Rashba and Cubic Dresselhaus Ferroelectric Semiconductors. NANO LETTERS 2021; 21:2265-2271. [PMID: 33645230 DOI: 10.1021/acs.nanolett.1c00116] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Generating and controlling spin current (SC) are of central interest in spin physics and applications. To date, the spin-orbit interaction (SOI) is an established pathway to generate SC through the spin-charge current conversion. We predict an efficient spin-light conversion via the Rashba and higher-order cubic Dresselhaus SOIs in ferroelectrics. Different from the known Edelstein effect, where SC is created by the nonequilibrium spin density, our predicted spin-polarized current is from direct interactions between light and unique spin textures generated by SOI in ferroelectrics. Using first-principles simulations, we demonstrate these concepts by calculating the DC spin photocurrent in a prototypical Rashba ferroelectric, α-GeTe. The photoinduced SC is about 2 orders of magnitude larger than the charge photocurrent. More importantly, we can conveniently switch the direction of SC by an applied electric field via inverting the spin textures. These predictions give hope to generating and controlling light-driven SC via a nonvolatile electric field.
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Affiliation(s)
- Ruixiang Fei
- Department of Physics, Washington University in St Louis, St. Louis, Missouri 63130, United States
| | - Shuaiqin Yu
- College of Ocean Science and Engineering, Shanghai Maritime University, Shanghai 201306, People's Republic of China
| | - Yan Lu
- Department of Physics, Washington University in St Louis, St. Louis, Missouri 63130, United States
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China
| | - Linghan Zhu
- Department of Physics, Washington University in St Louis, St. Louis, Missouri 63130, United States
| | - Li Yang
- Department of Physics, Washington University in St Louis, St. Louis, Missouri 63130, United States
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
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8
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Schankler AM, Gao L, Rappe AM. Large Bulk Piezophotovoltaic Effect of Monolayer 2 H-MoS 2. J Phys Chem Lett 2021; 12:1244-1249. [PMID: 33497221 DOI: 10.1021/acs.jpclett.0c03503] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition-metal dichalcogenide MoS2. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer 2H-MoS2 that dramatically enhances the integrated shift current. Using this distortion, we show that overlap in the Brillouin zone of the distributions of the shift vector (a quantity measuring the net displacement in real space of coherent wave packets during excitation) and the transition intensity is crucial for increasing the shift current. The distortion pattern is related to the material polarization and can be realized through an applied electric field via the converse piezoelectric effect. This finding suggests an additional method for engineering the shift current response of materials to augment previously reported methods using mechanical strain.
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Affiliation(s)
- Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Lingyuan Gao
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
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9
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Liu YH, Peng H, Liao WQ. A lead-free bismuth iodide organic-inorganic ferroelectric semiconductor. Chem Commun (Camb) 2021; 57:647-650. [PMID: 33346305 DOI: 10.1039/d0cc07443h] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
Organic-inorganic metal halide ferroelectric semiconductors are mainly lead halide ones, suffering from the presence of toxic lead. Herein, we report a lead-free bismuth iodide ferroelectric semiconductor [1,4-butanediammonium]BiI5, showing a high Curie temperature of 365 K and a small band gap of 1.95 eV, smaller than those of most lead halide counterparts.
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Affiliation(s)
- Yu-Hua Liu
- College of Chemistry, Nanchang University, Nanchang 330031, People's Republic of China.
| | - Hang Peng
- College of Chemistry, Nanchang University, Nanchang 330031, People's Republic of China.
| | - Wei-Qiang Liao
- College of Chemistry, Nanchang University, Nanchang 330031, People's Republic of China.
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10
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Du EW, Gong SJ, Tang X, Chu J, Rappe AM, Gong C. Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas. NANO LETTERS 2020; 20:7230-7236. [PMID: 32786931 DOI: 10.1021/acs.nanolett.0c02584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this work, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.
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Affiliation(s)
- Er-Wei Du
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
| | - Shi-Jing Gong
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
| | - Junhao Chu
- Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Cheng Gong
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, Maryland 20742, United States
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11
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Wang Q, Zhou C, Chai Y. Breaking symmetry in device design for self-driven 2D material based photodetectors. NANOSCALE 2020; 12:8109-8118. [PMID: 32236235 DOI: 10.1039/d0nr01326a] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The advent of graphene and other two-dimensional (2D) materials offers great potential for optoelectronic applications. Various device structures and novel mechanisms have been proposed to realize photodetectors with unique detecting properties. In this minireview, we focus on a self-driven photodetector that has great potential for low-power or even powerless operation required in the internet of things and wearable electronics. To address the general principle of self-driven properties, we propose and elaborate the concept of symmetry breaking in 2D material based self-driven photodetectors. We discuss various mechanisms of breaking symmetry for self-driven photodetectors, including asymmetrical contact engineering, field-induced asymmetry, PN homojunctions, and PN heterostructures. Typical device examples based on these mechanisms are reviewed and compared. The performance of current self-driven photodetectors is critically assessed and future directions are discussed towards the target application fields.
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Affiliation(s)
- Qi Wang
- South China University of Technology, Guangzhou, China.
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12
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Li L, Liu X, He C, Wang S, Ji C, Zhang X, Sun Z, Zhao S, Hong M, Luo J. A Potential Sn-Based Hybrid Perovskite Ferroelectric Semiconductor. J Am Chem Soc 2020; 142:1159-1163. [DOI: 10.1021/jacs.9b11341] [Citation(s) in RCA: 48] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Lina Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Xitao Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Chao He
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Sasa Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chengmin Ji
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhihua Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Sangen Zhao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Maochun Hong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
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13
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Sotome M, Nakamura M, Fujioka J, Ogino M, Kaneko Y, Morimoto T, Zhang Y, Kawasaki M, Nagaosa N, Tokura Y, Ogawa N. Spectral dynamics of shift current in ferroelectric semiconductor SbSI. Proc Natl Acad Sci U S A 2019; 116:1929-1933. [PMID: 30670652 PMCID: PMC6369763 DOI: 10.1073/pnas.1802427116] [Citation(s) in RCA: 58] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022] Open
Abstract
Photoexcitation in solids brings about transitions of electrons/holes between different electronic bands. If the solid lacks an inversion symmetry, these electronic transitions support spontaneous photocurrent due to the geometric phase of the constituting electronic bands: the Berry connection. This photocurrent, termed shift current, is expected to emerge on the timescale of primary photoexcitation process. We observe ultrafast evolution of the shift current in a prototypical ferroelectric semiconductor antimony sulfur iodide (SbSI) by detecting emitted terahertz electromagnetic waves. By sweeping the excitation photon energy across the bandgap, ultrafast electron dynamics as a source of terahertz emission abruptly changes its nature, reflecting a contribution of Berry connection on interband optical transition. The shift excitation carries a net charge flow and is followed by a swing over of the electron cloud on a subpicosecond timescale. Understanding these substantive characters of the shift current with the help of first-principles calculation will pave the way for its application to ultrafast sensors and solar cells.
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Affiliation(s)
- M Sotome
- RIKEN Center for Emergent Matter Science (CEMS), 351-0198 Wako, Japan;
| | - M Nakamura
- RIKEN Center for Emergent Matter Science (CEMS), 351-0198 Wako, Japan
- PRESTO, Japan Science and Technology Agency (JST), 332-0012 Kawaguchi, Japan
| | - J Fujioka
- PRESTO, Japan Science and Technology Agency (JST), 332-0012 Kawaguchi, Japan
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, 113-8656 Tokyo, Japan
| | - M Ogino
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, 113-8656 Tokyo, Japan
| | - Y Kaneko
- RIKEN Center for Emergent Matter Science (CEMS), 351-0198 Wako, Japan
| | - T Morimoto
- Department of Physics, University of California, Berkeley, CA 94720
| | - Y Zhang
- Solid State Chemistry, Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
- Institute for Theoretical Solid State Physics, Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
| | - M Kawasaki
- RIKEN Center for Emergent Matter Science (CEMS), 351-0198 Wako, Japan
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, 113-8656 Tokyo, Japan
| | - N Nagaosa
- RIKEN Center for Emergent Matter Science (CEMS), 351-0198 Wako, Japan
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, 113-8656 Tokyo, Japan
| | - Y Tokura
- RIKEN Center for Emergent Matter Science (CEMS), 351-0198 Wako, Japan
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, 113-8656 Tokyo, Japan
| | - N Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), 351-0198 Wako, Japan
- PRESTO, Japan Science and Technology Agency (JST), 332-0012 Kawaguchi, Japan
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