Two-Dimensional Second-Order Topological Insulator in Graphdiyne

Possible gapless helical edge states in hydrogenated graphene

Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a large band gap about 1 eV. Remarkably, by changing the spatial pattern of the hydrogenation, topologically distinct states can be realized, where the topological nontriviality is detected by C 2 parity indices in bulk and confirmed by the existence of gapless edge/interface states as protected by the mirror and sublattice symmetries. The analysis of the wave functions reveals that the helical edge states in hydrogenated graphene with the appropriate design carry pseudospin currents that are reminiscent of the quantum spin Hall effect. Our work shows the potential of hydrogenated graphene in pseudospin-based device applications.

Hidden Real Topology and Unusual Magnetoelectric Responses in Two-Dimensional Antiferromagnets

Recently, the real topology has been attracting widespread interest in two dimensions (2D). Here, based on first-principles calculations and theoretical analysis, the monolayer Cr2Se2O (ML-CrSeO) is revealed as the first material example of a 2D antiferromagnetic (AFM) real Chern insulator (RCI) with topologically protected corner states. Unlike previous RCIs, it is found that the real topology of the ML-CrSeO is rooted in one certain mirror subsystem of the two spin channels, and cannot be directly obtained from all the valence bands in each spin channel as commonly believed. In particular, due to antiferromagnetism, the corner modes in ML-CrSeO exhibit strong corner-contrasted spin polarization, leading to spin-corner coupling (SCC). This SCC enables a direct connection between spin space and real space. Consequently, large and switchable net magnetization can be induced in the ML-CrSeO nanodisk by electrostatic means, such as potential step and in-plane electric field, and the corresponding magnetoelectric responses behave like a sign function, distinguished from that of the conventional multiferroic materials. This work considerably broadens the candidate range of RCI materials, and opens up a new direction for topo-spintronics and 2D AFM materials research.

Design of Antiferromagnetic Second-Order Band Topology with Rotation Topological Invariants in Two Dimensions

The existence of fractionally quantized topological corner charge serves as a key indicator for two-dimensional (2D) second-order topological insulators (SOTIs), yet it has not been experimentally observed in realistic materials. Here, based on effective model analysis and symmetry arguments, we propose a strategy for achieving SOTI phases with in-gap corner states in 2D systems with antiferromagnetic (AFM) order. We discover that the band topology originates from the interplay between intrinsic spin-orbital coupling and interlayer AFM exchange interactions. Using first-principles calculations, we show that the 2D AFM SOTI phase can be realized in (MnBi2Te4)(Bi2Te3)m films. Moreover, we demonstrate that the SOTI states are linked to rotation topological invariants under 3-fold rotation symmetry C3, resulting in fractionally quantized corner charge, i.e., n 3 | e | (mod e). Due to the great achievements in (MnBi2Te4)(Bi2Te3)m systems, our results providing reliable material candidates for experimentally accessible AFM SOTIs should draw intense attention.

Layer-coupled corner states in two-dimensional topological multiferroics

The structural diversity and controllability in two-dimensional (2D) materials offers an intriguing platform for exploring a wide range of topological phenomena. The layer degree of freedom, as a novel technique for material manipulation, requires further investigation regarding its association with topological states. Here, using first-principles calculations and a tight-binding model, we propose a novel mechanism that couples the second-order topological corner states with the layer degree of freedom. By analyzing the edge states, topological indices, and spectra of nanoflakes, we identify ferromagnetic H'-Co2XF2 (X = C, N) as 2D second-order topological insulators with intrinsic ferroelectricity. Moreover, the topological corner states strongly couple with the layer degree of freedom, and, remarkably, ferroelectricity provides a nonvolatile handle to manipulate the layer-polarized corner states. These findings open an avenue for the manipulation of second-order topological states and establish a bridge between ferroelectricity and nontrivial topology.

Higher-order topological phases in crystalline and non-crystalline systems: a review

In recent years, higher-order topological phases have attracted great interest in various fields of physics. These phases have protected boundary states at lower-dimensional boundaries than the conventional first-order topological phases due to the higher-order bulk-boundary correspondence. In this review, we summarize current research progress on higher-order topological phases in both crystalline and non-crystalline systems. We firstly introduce prototypical models of higher-order topological phases in crystals and their topological characterizations. We then discuss effects of quenched disorder on higher-order topology and demonstrate disorder-induced higher-order topological insulators. We also review the theoretical studies on higher-order topological insulators in amorphous systems without any crystalline symmetry and higher-order topological phases in non-periodic lattices including quasicrystals, hyperbolic lattices, and fractals, which have no crystalline counterparts. We conclude the review by a summary of experimental realizations of higher-order topological phases and discussions on potential directions for future study.

Atomic-Limit Mott Insulator in [4]Triangulene Frameworks

Triangulene, one unique class of zigzag-edged triangular graphene molecules, has attracted tremendous research interest. In this work, as an ultimate phase of the Mott insulator, we present the realization of the atomic-limit Mott insulator in experimentally synthesized [4]triangulene frameworks ([4]-TGFs) from first-principles calculations. The frontier molecular orbitals of the nonmagnetic [4]triangulene consist of three coupled corner modes. After the isolated [4]triangulene is assembled into [4]-TGF, one special enantiomorphic flat band is created through the coupling of these corner modes, which is identified to be a second-order topological insulator with half-filled topological corner states at the Fermi level. Moreover, [4]-TGF prefers an antiferromagnetic ground state under Hubbard interactions, which further splits these metallic zero-energy states into an atomic-limit Mott insulator with spin-polarized corners. Since the fractional filling of topological corner states is a smoking-gun signature of higher-order topology, our results demonstrate a universal approach to explore the atomic-limit Mott insulators in higher-order topological materials.

Topological electronic states in holey graphyne

We unveil that the holey graphyne (HGY), a two-dimensional carbon allotrope where benzene rings are connected by two -C≡C- bonds fabricated recently in a bottom-up way, exhibits topological electronic states. Using first-principles calculations and Wannier tight-binding modeling, we discover a higher-order topological invariant associated withC2symmetry of the material, and show that the resultant corner modes appear in nanoflakes matching to the structure of precursor reported previously, which are ready for direct experimental observations. In addition, we find that a band inversion between emergentg-like andh-like orbitals gives rise to a nontrivial topology characterized byZ2invariant protected by an energy gap as large as 0.52 eV, manifesting helical edge states mimicking those in the prominent quantum spin Hall effect, which can be accessed experimentally after hydrogenation in HGY. We hope these findings trigger interests towards exploring the topological electronic states in HGY and related future electronics applications.

Tunable valley polarization effect and second-order topological state in monolayer FeClSH

In two-dimensional (2D) materials, breaking the inversion symmetry plays an important role in valleytronics. Ferrovalley (FV) materials can achieve spontaneous valley polarization (VP) without additional modulation due to the magnetic exchange interaction and strong spin-orbit coupling. Using first-principles calculations, we predict a new 2D material, Janus FeClSH, which exhibits a large spontaneous VP. This monolayer is a perfect FV material, where the valence band maximum and conduction band minimum are located at the K/K' point. A large VP of 102.95 meV is spontaneously generated for the case of out-of-plane magnetization. Additionally, we propose that the irradiating circularly polarized light can be used to realize VP for the case of in-plane magnetization. Remarkably, a triangular nanoflake of FeClSH with armchair edges can show nontrivial corner states, exhibiting a second-order topological insulator (SOTI) state. The VP effect and SOTI state are tunable with the Hubbard U parameter, making the FeClSH monolayer promising for the study of the coupling between VP and SOTI.

Second order topology in a band engineered Chern insulator

Haldane model is a celebrated tight binding toy model of a Chern insulator in a 2D honeycomb lattice that exhibits quantized Hall conductance in the absence of an external magnetic field. In our work, we deform the bands of the Haldane model smoothly by varying one of its three nearest neighbour hopping amplitudes ([Formula: see text]), while keeping the other two (t) fixed. This breaks the [Formula: see text] symmetry of the Hamiltonian, while the [Formula: see text] symmetry is preserved. The symmetry breaking causes the Dirac cones to shift from the K and the K[Formula: see text] points in the Brillouin zone (BZ) to an intermediate M point. This is evident from the Berry curvature plots which show a similar shift in the corresponding values as a function of the deformation parameter, namely [Formula: see text]. We observe two different topological phases of which, one is a topological insulator (TI) and the other is a second order topological insulator (SOTI). The Chern number (C) remains perfectly quantized at a value of [Formula: see text] for the TI phase and it goes to zero in the SOTI phase. Furthermore, the evolution of the Wannier charge center (WCC) as the band is smoothly deformed shows a jump in the TI phase indicating the presence of conducting edge modes. We also study the SOTI phase and diagonalize the real space Hamiltonian on a rhombic supercell which shows the presence of in-gap zero energy corner modes. The polarization of the system, namely [Formula: see text] and [Formula: see text], are evaluated, along the x and the y directions, respectively. We see that both [Formula: see text] and [Formula: see text] are quantized in the SOTI phase owing to the presence of the inversion symmetry of the system. Finally we establish the SOTI phase as an example of a topological phase with zero Berry curvature and provide an analogy with the two dimensional Su-Schrieffer-Heeger model.

A robust and tunable Luttinger liquid in correlated edge of transition-metal second-order topological insulator Ta2Pd3Te5

The interplay between topology and interaction always plays an important role in condensed matter physics and induces many exotic quantum phases, while rare transition metal layered material (TMLM) has been proved to possess both. Here we report a TMLM Ta2Pd3Te5 has the two-dimensional second-order topology (also a quadrupole topological insulator) with correlated edge states - Luttinger liquid. It is ascribed to the unconventional nature of the mismatch between charge- and atomic- centers induced by a remarkable double-band inversion. This one-dimensional protected edge state preserves the Luttinger liquid behavior with robustness and universality in scale from micro- to macro- size, leading to a significant anisotropic electrical transport through two-dimensional sides of bulk materials. Moreover, the bulk gap can be modulated by the thickness, resulting in an extensive-range phase diagram for Luttinger liquid. These provide an attractive model to study the interaction and quantum phases in correlated topological systems.

Magnetic topological materials in two-dimensional: theory, material realization and application prospects

Two-dimensional (2D) magnetism and nontrivial band topology are both areas of research that are currently receiving significant attention in the study of 2D materials. Recently, a novel class of materials has emerged, known as 2D magnetic topological materials, which elegantly combine 2D magnetism and nontrivial topology. This field has garnered increasing interest, especially due to the emergence of several novel magnetic topological states that have been generalized into the 2D scale. These states include antiferromagnetic topological insulators/semimetals, second-order topological insulators, and topological half-metals. Despite the rapid advancements in this emerging research field in recent years, there have been few comprehensive summaries of the state-of-the-art progress. Therefore, this review aims to provide a thorough analysis of current progress on 2D magnetic topological materials. We cover various 2D magnetic topological insulators, a range of 2D magnetic topological semimetals, and the novel 2D topological half-metals, systematically analyzing the basic topological theory, the course of development, the material realization, and potential applications. Finally, we discuss the challenges and prospects for 2D magnetic topological materials, highlighting the potential for future breakthroughs in this exciting field.

Bulk-local-density-of-state correspondence in topological insulators

In the quest to connect bulk topological quantum numbers to measurable parameters in real materials, current established approaches often necessitate specific conditions, limiting their applicability. Here we propose and demonstrate an approach to link the non-trivial hierarchical bulk topology to the multidimensional partition of local density of states (LDOS), denoted as the bulk-LDOS correspondence. In finite-size topologically nontrivial photonic crystals, we observe the LDOS partitioned into three distinct regions: a two-dimensional interior bulk area, a one-dimensional edge region, and zero-dimensional corner sites. Contrarily, topologically trivial cases exhibit uniform LDOS distribution across the entire two-dimensional bulk area. Our findings provide a general framework for distinguishing topological insulators and uncovering novel aspects of topological directional band-gap materials, even in the absence of in-gap states.

Identifying topological corner states in two-dimensional metal-organic frameworks

Due to the diversity of molecular building blocks, the two-dimensional (2D) metal-organic frameworks (MOFs) are ideal platforms to realize exotic lattice models in condensed matter theory. In this work, we demonstrate the universal existence of topological corner states in 2D MOFs with a star lattice configuration, and confirm the intriguing higher-order nontrivial topology in the energy window between two Kagome-bands, or between Dirac-band and four-band. Furthermore, combining first-principles calculations and scanning tunneling microscopy measurements, the unique topological corner state is directly identified in monolayer Ni3(HITP)2 (HITP = 2,3,6,7,10,11-hexaiminotriphenylene) grown on the Au(111) substrate. Our results not only illustrate the first organic topological state in the experiments, but also offer an exciting opportunity to study higher-order topology in 2D MOFs with the large insulating band gap.

Pseudospin Polarized Dual-Higher-Order Topology in Hydrogen-Substituted Graphdiyne

Although the topological band theory is applicable to both Fermionic and bosonic systems, the same electronic and phononic topological phases are seldom reported in one natural material. In this work, we show the presence of a dual-higher-order topology in hydrogen-substituted graphdiyne (H-GDY) by first-principles calculations. The intriguing enantiomorphic flat-bands are realized in both electronic and phononic bands of H-GDY, which is confirmed to be an organic 2D second-order topological insulator (SOTI). Most importantly, we found that the topological corner states are pseudospin polarized in H-GDY, exhibiting a clockwise or counterclockwise texture perpendicular to the radial direction. Our results not only identify the existence of the dual-higher-order topology in covalent organic frameworks but also uncover a unique pseudospin polarization-coordinate locking relation, further extending the well-known spin-momentum locking relation in conventional topological insulators.

On-Surface Two-Dimensional Polymerization: Advances, Challenges, and Prospects

Two-dimensional polymers (2DPs) are molecularly thin networks consisting of monomers covalently linked in at least two directions in the molecular plane. Because of the unique structural features and emergent physicochemical properties, 2DPs promise application potentials in catalysis, chemical sensing, and organic electronic devices. On-surface synthesis is of great interest to fabricate 2DPs with atomic precision, and the properties of the 2DPs can be characterized in situ through scanning probe techniques. In this Perspective, we first introduce the recent developments of on-surface 2D polymerization, including the design principle, the synthetic reactions, and the factors affecting the synthesis of 2DPs on surface. Then, we summarize some major challenges in this field, including the fabrication of high-quality 2DPs and the study of the intrinsic electronic properties of 2DPs, and we discuss some of the available solutions to address these issues.

Magnetic Second-Order Topological Insulators in 2H-Transition Metal Dichalcogenides

The transition metal dichalcogenides, 2H-VX2 (X = S, Se, Te), are identified as two-dimensional second-order topological insulator (SOTI) with a ferromagnetic ground state by first-principles calculations. The 2H-VX2 (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin-polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H-VX2 (X = S, Se, Te) in real space. The corner states are robust against symmetry-breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H-VX2 (X = S, Se, Te) materials can be maintained in the presence of spin-orbit coupling and are stable against magnetization. Overall, the results reveal 2H-VX2 (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection.

Magnetic Real Chern Insulator in 2D Metal-Organic Frameworks

Real Chern insulators have attracted great interest, but so far, their material realization is limited to nonmagnetic crystals and systems without spin-orbit coupling. Here, we reveal the magnetic real Chern insulator (MRCI) state in a recently synthesized metal-organic framework material Co3(HITP)2. Its ground state with in-plane ferromagnetic ordering hosts a nontrivial real Chern number, enabled by the C2zT symmetry and robustness against spin-orbit coupling. Distinct from previous nonmagnetic examples, the topological corner zero modes of MRCIs are spin-polarized. Furthermore, under small tensile strains, the material undergoes a topological phase transition from the MRCI to a magnetic double-Weyl semimetal phase, via a pseudospin-1 critical state. Similar physics can also be found in closely related materials Mn3(HITP)2 and Fe3(HITP)2, which also exist. Possible experimental detections and implications of an emerging magnetic flat band in the system are discussed.

Theoretical studies of magneto-optical Kerr and Faraday effects in two-dimensional second-order topological insulators

Optical approaches are useful for studying the electronic and spin structure of materials. Here, based on the tight-binding model and linear response theory, we investigate the magneto-optical Kerr and Faraday effects in two-dimensional second-order topological insulators (SOTI) with external magnetization. We find that orbital-dependent Zeeman term induces band crossings for SOTI phase, which are absent for trivial phase. In the weak-magnetization regime, these crossings give rise to giant jumps (peaks) of Kerr and Faraday angles (ellipticity) for SOTI phase. In the strong-magnetization regime, we find that two nearly flat bands are formed at the high-symmetry point of Brillouin zone of SOTI phase. These flat bands give rise to two successive giant jumps (peaks) of Kerr and Faraday angles (ellipticity). These phenomena provide new possibilities to characterize and detect the two-dimensional SOTI phase.

Engineering Second-Order Corner States in 2D Multiferroics

The understanding and manipulate of the second-order corner states are central to both fundamental physics and future topotronics applications. Despite the fact that numerous second-order topological insulators (SOTIs) are achieved, the efficient engineering in a given material remains elusive. Here, the emergence of 2D multiferroics SOTIs in SbAs and BP₅ monolayers is theoretically demonstrated, and an efficient and straightforward way for engineering the nontrivial corner states by ferroelasticity and ferroelectricity is remarkably proposed. With ferroelectric polarization of SbAs and BP₅ monolayers, the nontrivial corner states emerge in the mirror symmetric corners and are perpendicular to orientations of the in-plane spontaneous polarization. And remarkably the spatial distribution of the corner states can be effectively tuned by a ferroelastic switching. At the intermediate states of both ferroelectric and ferroelastic switchings, the corner states disappear. These finding not only combines exotic SOTIs with multiferroics but also pave the way for experimental discovery of 2D tunable SOTIs.

Graphynes and Graphdiynes for Energy Storage and Catalytic Utilization: Theoretical Insights into Recent Advances

Carbon allotropes have contributed to all aspects of people's lives throughout human history. As emerging carbon-based low-dimensional materials, graphyne family members (GYF), represented by graphdiyne, have a wide range potential applications due to their superior physical and chemical properties. In particular, graphdiyne (GDY), as the leader of the graphyne family, has been practically applied to various research fields since it was first successfully synthesized. GYF have a large surface area, both sp and sp² hybridization, and a certain band gap, which was considered to originate from the overlap of carbon 2p_z orbitals and the inhomogeneous π-bonds of carbon atoms in different hybridization forms. These properties mean GYF-based materials still have many potential applications to be developed, especially in energy storage and catalytic utilization. Since most of the GYF have yet to be synthesized and applications of successfully synthesized GYF have not been developed for a long time, theoretical results in various application fields should be shared to experimentalists to attract more intentions. In this Review, we summarized and discussed the synthesis, structural properties, and applications of GYF-based materials from the theoretical insights, hoping to provide different viewpoints and comments.

Recent advances on graphyne and its family members as membrane materials for water purification and desalination

Graphyne and its family members (GFMs) are allotropes of carbon (a class of 2D materials) having unique properties in form of structures, pores and atom hybridizations. Owing to their unique properties, GFMs have been widely utilized in various practical and theoretical applications. In the past decade, GFMs have received considerable attention in the area of water purification and desalination, especially in theoretical and computational aspects. More recently, GFMs have shown greater prospects in achieving optimal separation performance than the experimentally derived commercial polyamide membranes. In this review, recent theoretical and computational advances made in the GFMs research as it relates to water purification and desalination are summarized. Brief details on the properties of GFMs and the commonly used computational methods were described. More specifically, we systematically reviewed the various computational approaches employed with emphasis on the predicted permeability and selectivity of the GFM membranes. Finally, the current challenges limiting their large-scale practical applications coupled with the possible research directions for overcoming the challenges are proposed.

Robust Second-Order Topological Insulators with Giant Valley Polarization in Two-Dimensional Honeycomb Ferromagnets

Magnetic topological states have attracted great attention that provide exciting platforms for exploring prominent physical phenomena and applications of topological spintronics. Here, using a tight-binding model and first-principles calculations, we put forward that, in contrast to previously reported magnetic second-order topological insulators (SOTIs), robust SOTIs can emerge in two-dimensional ferromagnets regardless of magnetization directions. Remarkably, we identify intrinsic ferromagnetic 2H-RuCl₂ and Janus VSSe monolayers as experimentally feasible candidates of predicted robust SOTIs with the emergence of nontrivial corner states along different magnetization directions. Moreover, under out-of-plane magnetization, we unexpectedly point out that the valley polarization of SOTIs can be huge and much larger than that of the known ferrovalley materials, opening up a technological avenue to bridge the valleytronics and higher-order topology with high possibility of innovative applications in topological spintronics and valleytronics.

Organic Higher-Order Topological Insulators: Heterotriangulene-Based Covalent Organic Frameworks

The ability to design and control the chemical characteristics of covalent organic frameworks (COFs) offers a new avenue for the development of functional materials, especially with respect to topological properties. Based on density functional theory calculations, by varying the core units through the choice of bridging groups [O, C═O, CH₂, or C(CH₃)₂] and the linker units [acetylene, diacetylene, or benzene], we have designed heterotriangulene-based COFs that are predicted to be two-dimensional higher-order topological insulators (TIs). The higher-order TI characteristics of these COFs are identified via their topological invariants and the presence of in-gap topological corner modes and gapped edge states. The frontier molecular orbital energies of the building moieties play an important role in determining the size of the higher-order TI gap, which we find to be highly dependent on linker units. We also examined the deposition of the COFs on a boron nitride substrate to assess the feasibility of experimental observation of a higher-order TI phase in the organic layer. This work thus provides new insights into heterotriangulene-based COFs and guidance for the exploration of purely organic topological materials.

Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer

Two-dimensional antiferromagnetic semiconductors have triggered significant attention due to their unique physical properties and broad application. Based on first-principles calculations, a novel two-dimensional (2D) antiferromagnetic material MnSi₂N₄ monolayer is predicted. The calculation results show that the two-dimensional MnSi₂N₄ prefers an antiferromagnetic state with a small band gap of 0.26 eV. MnSi₂N₄ has strong antiferromagnetic coupling which can be effectively tuned under strain. Interestingly, the MnSi₂N₄ monolayer exhibits a half-metallic ferromagnetic properties under an external magnetic field, in which the spin-up electronic state displays a metallic property, while the spin-down electronic state exhibits a semiconducting characteristic. Therefore, 100% spin polarization can be achieved. Two-dimensional MnSi₂N₄ monolayer has potential application in the field of high-density information storage and spintronic devices.

Intrinsic Second-Order Topological Insulator in Two-Dimensional Covalent Organic Frameworks

As an intriguing topological phase, higher-order topological insulators have attracted tremendous attention, but the candidate materials are limited in artificial and inorganic systems. In this work, we propose a universal approach to search for two-dimensional (2D) second-order topological insulators (SOTIs) in covalent organic frameworks (COFs) with C₃ symmetric cores. The underlying mechanism is illustrated through tight-binding calculations in a star lattice, showing the 2D SOTI in an overlooked energy window between two Kagome-bands with four types of nontrivial band structures. The emergence of the unique topological edge and corner states can be understood from the Su-Schrieffer-Heeger model. Furthermore, using the frontier orbital of the monomer building block as an indicator, the 2D SOTI is directly confirmed in three realistic COFs by first-principles calculations. Our results not only extend the concept of organic topological insulators from first-order to second-order but also demonstrate the universal existence of intrinsic higher-order topology in 2D COFs.

Experimental Identification of the Second-Order Non-Hermitian Skin Effect with Physics-Graph-Informed Machine Learning

Topological phases of matter are conventionally characterized by the bulk-boundary correspondence in Hermitian systems. The topological invariant of the bulk in d dimensions corresponds to the number of (d - 1)-dimensional boundary states. By extension, higher-order topological insulators reveal a bulk-edge-corner correspondence, such that nth order topological phases feature (d - n)-dimensional boundary states. The advent of non-Hermitian topological systems sheds new light on the emergence of the non-Hermitian skin effect (NHSE) with an extensive number of boundary modes under open boundary conditions. Still, the higher-order NHSE remains largely unexplored, particularly in the experiment. An unsupervised approach-physics-graph-informed machine learning (PGIML)-to enhance the data mining ability of machine learning with limited domain knowledge is introduced. Through PGIML, the second-order NHSE in a 2D non-Hermitian topoelectrical circuit is experimentally demonstrated. The admittance spectra of the circuit exhibit an extensive number of corner skin modes and extreme sensitivity of the spectral flow to the boundary conditions. The violation of the conventional bulk-boundary correspondence in the second-order NHSE implies that modification of the topological band theory is inevitable in higher dimensional non-Hermitian systems.

On-Surface Synthesis toward Two-Dimensional Polymers

Two-dimensional (2D) polymers have garnered widespread interest because of their intriguing physicochemical properties. Envisaged applications in fields including nanodevices, solid-state chemistry, physical organic chemistry, and condensed matter physics, however, demand high-quality and large-scale production. In this perspective, we first introduce exotic band structures of organic frameworks holding honeycomb, kagome, and Lieb lattices. We further discuss how mesoscale ordered 2D polymers can be synthesized by means of choosing suitable monomers and optimizing growth conditions. We describe successful polymerization strategies to introducing a non-benzenoid subunit into a π-conjugated carbon lattice via delicately designed monomer precursors. Also, to obviate transfer and restore the intrinsic properties of π-conjugated polymers, new paradigms of aryl-aryl coupling on inert surfaces are discussed. Recent achievements in the photopolymerization demonstrate the need for monomer design. We conclude the potential applications of these organic networks and project the future possibilities in providing new insights into on-surface polymerization.

Orbital Shift-Induced Boundary Obstructed Topological Materials with a Large Energy Gap

Boundary obstructed topological phases caused by Wannier orbital shift between ordinary atomic sites are proposed, which, however, cannot be indicated by symmetry eigenvalues at high symmetry momenta (symmetry indicators) in bulk. On the open boundary, Wannier charge centers can shift to different atoms from those in bulk, leading to in-gap surface states, higher-order hinge states or corner states. To demonstrate such orbital shift-induced boundary obstructed topological insulators, eight material candidates are predicted, all of which are overlooked in the present topological databases. Metallic surface states, hinge states, or corner states cover the large bulk energy gap (e.g., more than 1 eV in TlGaTe₂ ) at related boundary, which are ready for experimental detection. Additionally, these materials are also fragile topological insulators with hourglass-like surface states.

Effective Model for Fractional Topological Corner Modes in Quasicrystals

High-order topological insulators (HOTIs), as generalized from topological crystalline insulators, are characterized with lower-dimensional metallic boundary states protected by spatial symmetries of a crystal, whose theoretical framework based on band inversion at special k points cannot be readily extended to quasicrystals because quasicrystals contain rotational symmetries that are not compatible with crystals, and momentum is no longer a good quantum number. Here, we develop a low-energy effective model underlying HOTI states in 2D quasicrystals for all possible rotational symmetries. By implementing a novel Fourier transform developed recently for quasicrystals and approximating the long-wavelength behavior by their large-scale average, we construct an effective k·p Hamiltonian to capture the band inversion at the center of a pseudo-Brillouin zone. We show that an in-plane Zeeman field can induce mass kinks at the intersection of adjacent edges of a 2D quasicrystal topological insulators and generate corner modes (CMs) with fractional charge, protected by rotational symmetries. Our model predictions are confirmed by numerical tight-binding calculations. Furthermore, when the quasicrystal is proximitized by an s-wave superconductor, Majorana CMs can also be created by tuning the field strength and chemical potential. Our work affords a generic approach to studying the low-energy physics of quasicrystals, in association with topological excitations and fractional statistics.

Kekulé Lattice in Graphdiyne: Coexistence of Phononic and Electronic Second-Order Topological Insulator

Topological physics has been extensively studied in different kinds of bosonic and Fermionic systems, but the coexistence of topological phonons and electrons in one single material has seldom been reported. Recently, graphdiyne has been proposed as a two-dimensional (2D) electronic second-order topological insulator (SOTI). In this work, we found that graphdiyne is equivalent to Kekulé lattice, also realizing a 2D phononic SOTI in both out-of-plane and in-plane modes. Depending on edge terminations, the characterized topological corner states can be either inside or outside the bulk gap and are tunable by the local corner potential. Most remarkably, a unique selectivity of space and symmetry is revealed in the electron-phonon coupling between the localized phononic and electronic topological corner states. Our results not only demonstrate the phononic higher-order band topology in a real carbon material but also provide an opportunity to investigate the interplay between phononic and electronic higher-order topological states.

Persistence of Monoclinic Crystal Structure in 3D Second-Order Topological Insulator Candidate 1T'-MoTe2 Thin Flake Without Structural Phase Transition

A van der Waals material, MoTe2 with a monoclinic 1T' crystal structure is a candidate for 3D second-order topological insulators (SOTIs) hosting gapless hinge states and insulating surface states. However, due to the temperature-induced structural phase transition, the monoclinic 1T' structure of MoTe2 is transformed into the orthorhombic Td structure as the temperature is lowered, which hinders the experimental verification and electronic applications of the predicted SOTI state at low temperatures. Here, systematic Raman spectroscopy studies of the exfoliated MoTe2 thin flakes with variable thicknesses at different temperatures, are presented. As a spectroscopic signature of the orthorhombic Td structure of MoTe2 , the out-of-plane vibration mode D at ≈ 125 cm-1 is always visible below a certain temperature in the multilayer flakes thicker than ≈ 27.7 nm, but vanishes in the temperature range from 80 to 320 K when the flake thickness becomes lower than ≈ 19.5 nm. The absence of the out-of-plane vibration mode D in the Raman spectra here demonstrates not only the disappearance of the monoclinic-to-orthorhombic phase transition but also the persistence of the monoclinic 1T' structure in the MoTe2 thin flakes thinner than ≈ 19.5 nm at low temperatures down to 80 K, which may be caused by the high enough density of the holes introduced during the gold-enhanced exfoliation process and exposure to air. The MoTe2 thin flakes with the low-temperature monoclinic 1T' structure provide a material platform for realizing SOTI states in van der Waals materials at low temperatures, which paves the way for developing a new generation of electronic devices based on SOTIs.

Second-Order Real Nodal-Line Semimetal in Three-Dimensional Graphdiyne

Real topological phases featuring real Chern numbers and second-order boundary modes have been a focus of current research, but finding their material realization remains a challenge. Here, based on first-principles calculations and theoretical analysis, we reveal the already experimentally synthesized three-dimensional (3D) graphdiyne as the first realistic example of the recently proposed second-order real nodal-line semimetal. We show that the material hosts a pair of real nodal rings, each protected by two topological charges: a real Chern number and a 1D winding number. The two charges generate distinct topological boundary modes at distinct boundaries. The real Chern number leads to a pair of hinge Fermi arcs, whereas the winding number protects a double drumhead surface bands. We develop a low-energy model for 3D graphdiyne which captures the essential topological physics. Experimental aspects and possible topological transition to a 3D real Chern insulator phase are discussed.

Chemistry, Functionalization, and Applications of Recent Monoelemental Two-Dimensional Materials and Their Heterostructures

The past decades have witnessed a rapid expansion in investigations of two-dimensional (2D) monoelemental materials (Xenes), which are promising materials in various fields, including applications in optoelectronic devices, biomedicine, catalysis, and energy storage. Apart from graphene and phosphorene, recently emerging 2D Xenes, specifically graphdiyne, borophene, arsenene, antimonene, bismuthene, and tellurene, have attracted considerable interest due to their unique optical, electrical, and catalytic properties, endowing them a broader range of intriguing applications. In this review, the structures and properties of these emerging Xenes are summarized based on theoretical and experimental results. The synthetic approaches for their fabrication, mainly bottom-up and top-down, are presented. Surface modification strategies are also shown. The wide applications of these emerging Xenes in nonlinear optical devices, optoelectronics, catalysis, biomedicine, and energy application are further discussed. Finally, this review concludes with an assessment of the current status, a description of existing scientific and application challenges, and a discussion of possible directions to advance this fertile field.

Quantum Monte Carlo study of topological phases on a spin analogue of Benalcazar-Bernevig-Hughes model

We study the higher-order topological spin phases based on a spin analogue of Benalcazar-Bernevig-Hughes model in two dimensions using large-scale quantum Monte Carlo simulations. A continuous Néel-valence bond solid quantum phase transition is revealed by tuning the ratio between dimerized spin couplings, namely, the weak and strong exchange couplings. Through the finite-size scaling analysis, we identify the phase critical points, and consequently, map out the full phase diagrams in related parameter spaces. Particularly, we find that the valence bond solid phase can be a higher-order topological spin phase, which has a gap for spin excitations in the bulk while demonstrates characteristic gapless spin modes at corners of open lattices. We further discuss the connection between the higher-order topological spin phases and the electronic correlated higher-order phases, and find both of them possess gapless spin corner modes that are protected by higher-order topology. Our result exemplifies higher-order physics in the correlated spin systems and will contribute to further understandings of the many-body higher-order topological phenomena.

Higher-order topological insulator in cubic semiconductor quantum wells

The search for exotic new topological states of matter in widely accessible materials, for which the manufacturing process is mastered, is one of the major challenges of the current topological physics. Here we predict higher order topological insulator state in quantum wells based on the most common semiconducting materials. By successively deriving the bulk and boundary Hamiltonians, we theoretically prove the existence of topological corner states due to cubic symmetry in quantum wells with double band inversion. We show that the appearance of corner states does not depend solely on the crystallographic orientation of the meeting edges, but also on the growth orientation of the quantum well. Our theoretical results significantly extend the application potential of topological quantum wells based on IV, II–VI and III–V semiconductors with diamond or zinc-blende structures.

Higher-order topological Mott insulator on the pyrochlore lattice

We provide the first unbiased evidence for a higher-order topological Mott insulator in three dimensions by numerically exact quantum Monte Carlo simulations. This insulating phase is adiabatically connected to a third-order topological insulator in the noninteracting limit, which features gapless modes around the corners of the pyrochlore lattice and is characterized by a [Formula: see text] spin-Berry phase. The difference between the correlated and non-correlated topological phases is that in the former phase the gapless corner modes emerge only in spin excitations being Mott-like. We also show that the topological phase transition from the third-order topological Mott insulator to the usual Mott insulator occurs when the bulk spin gap solely closes.

Structural buckling induced higher-order topology

Higher-order topological insulator (HOTI) states, such as two-dimension (2D) HOTI featured with topologically protected corner modes at the intersection of two gapped crystalline boundaries, have attracted much recent interest. However, the physical mechanism underlying the formation of HOTI states is not fully understood, which has hindered our fundamental understanding and discovery of HOTI materials. Here we propose a mechanistic approach to induce higher-order topological phases via structural buckling of 2D topological crystalline insulators (TCIs). While in-plane mirror symmetry is broken by structural buckling, which destroys the TCI state, the combination of mirror and rotation symmetry is preserved in the buckled system, which gives rise to the HOTI state. We demonstrate that this approach is generally applicable to various 2D lattices with different symmetries and buckling patterns, opening a horizon of possible materials to realize 2D HOTIs. The HOTIs so generated are also shown to be robust against buckling height fluctuation and in-plane displacement. A concrete example is given for the buckled \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{upgreek} \usepackage{mathrsfs} \setlength{\oddsidemargin}{-69pt} \begin{document} }{}$\beta $\end{document}-Sb monolayer from first-principles calculations. Our finding not only enriches our fundamental understanding of higher-order topology, but also opens a new route to discovering HOTI materials.

Generic Orbital Design of Higher-Order Topological Quasicrystalline Insulators with Odd Five-Fold Rotation Symmetry

In addition to crystals, topological phases in quasicrystals and disorder systems have drawn increasing attention lately. Here, we propose a generic double band-inversion mechanism underlying the higher-order topological phase in quasicrystals, that is.,"higher-order topological quasicrystalline insulator" (HOTQI), which exploits local atomic orbital and lattice symmetries. It is generally applicable to both quasicrystals and crystals with either odd-rotational (OR) or even-rotational symmetry (ERS), different from previous HOTI mechanisms whose applicability is limited by symmetry types. The HOTQI is characterized by topological corner states at the nonordinary corners of pentagonal (octagonal) samples of five-fold (eight-fold) quasicrystals, which violate the translational invariance and ordinary crystalline symmetries. The role of quasicrystalline symmetry, the robustness against symmetry breaking, and possible experimental realizations are discussed. Our findings not only provide a concrete example of HOTQIs that is incompatible with classical crystallographic symmetry but also offer useful guidance to the search of higher-order topological materials and metamaterials.

Higher-Order Fabry-Pérot Interferometer from Topological Hinge States

We propose an intrinsic three-dimensional Fabry-Pérot type interferometer, coined "higher-order interferometer," that is based on the chiral hinge states of second-order topological insulators and cannot be mapped to an equivalent two-dimensional setting because of higher-order topological obstructions. Quantum interference patterns in the two-terminal conductance of this interferometer are controllable not only by tuning the strength but also, particularly, by rotating the direction of the magnetic field applied perpendicularly to the transport direction. Remarkably, the conductance exhibits a characteristic beating pattern with multiple frequencies depending on the field strength and direction in a unique fashion. Our novel interferometer thus provides feasible and robust magnetotransport signatures for hinge states of higher-order topological insulators.

Structural-Disorder-Induced Second-Order Topological Insulators in Three Dimensions

Higher-order topological insulators are established as topological crystalline insulators protected by crystalline symmetries. One celebrated example is the second-order topological insulator in three dimensions that hosts chiral hinge modes protected by crystalline symmetries. Since amorphous solids are ubiquitous, it is important to ask whether such a second-order topological insulator can exist in an amorphous system without any spatial order. Here, we predict the existence of a second-order topological insulating phase in an amorphous system without any crystalline symmetry. Such a topological phase manifests in the winding number of the quadrupole moment, the quantized longitudinal conductance, and the hinge states. Furthermore, in stark contrast to the viewpoint that structural disorder should be detrimental to the higher-order topological phase, we remarkably find that structural disorder can induce a second-order topological insulator from a topologically trivial phase in a regular geometry. We finally demonstrate the existence of a second-order topological phase in amorphous systems with time-reversal symmetry.

Switching Spinless and Spinful Topological Phases with Projective PT Symmetry

A fundamental dichotomous classification for all physical systems is according to whether they are spinless or spinful. This is especially crucial for the study of symmetry-protected topological phases, as the two classes have distinct symmetry algebra. As a prominent example, the spacetime inversion symmetry PT satisfies (PT)^{2}=±1 for spinless/spinful systems, and each class features unique topological phases. Here, we reveal a possibility to switch the two fundamental classes via Z_{2} projective representations. For PT symmetry, this occurs when P inverses the gauge transformation needed to recover the original Z_{2} gauge connections under P. As a result, we can achieve topological phases originally unique for spinful systems in a spinless system, and vice versa. We explicitly demonstrate the claimed mechanism with several concrete models, such as Kramers degenerate bands and Kramers Majorana boundary modes in spinless systems, and real topological phases in spinful systems. Possible experimental realization of these models is discussed. Our work breaks a fundamental limitation on topological phases and opens an unprecedented possibility to realize intriguing topological phases in previously impossible systems.

Floquet Second-Order Topological Phases in Momentum Space

Higher-order topological phases (HOTPs) are characterized by symmetry-protected bound states at the corners or hinges of the system. In this work, we reveal a momentum-space counterpart of HOTPs in time-periodic driven systems, which are demonstrated in a two-dimensional extension of the quantum double-kicked rotor. The found Floquet HOTPs are protected by chiral symmetry and characterized by a pair of topological invariants, which could take arbitrarily large integer values with the increase of kicking strengths. These topological numbers are shown to be measurable from the chiral dynamics of wave packets. Under open boundary conditions, multiple quartets Floquet corner modes with zero and π quasienergies emerge in the system and coexist with delocalized bulk states at the same quasienergies, forming second-order Floquet topological bound states in the continuum. The number of these corner modes is further counted by the bulk topological invariants according to the relation of bulk-corner correspondence. Our findings thus extend the study of HOTPs to momentum-space lattices and further uncover the richness of HOTPs and corner-localized bound states in continuum in Floquet systems.

Fully spin-polarized Weyl fermions and in/out-of-plane quantum anomalous Hall effects in a two-dimensional d0 ferromagnet

The quantum anomalous Hall effect (QAHE) in intrinsic ferromagnets has attracted considerable attention recently. Previously, studies of the QAHE have mostly focused on the default assumption of out-of-plane magnetization. In fact, the QAHE can also be achieved via in-plane magnetization, but such candidate materials are very scarce. Here, we find that two-dimensional (2D) YN₂ not only possesses the previously reported out-of-plane QAHE, but it also possesses a tunable in-plane QAHE. More importantly, unlike the previously reported in-plane QAHE in d/f-type ferromagnets, here we report the effect in a 2D d⁰ ferromagnet, namely YN₂, for the first time. In the ground state, a YN₂ monolayer has a half-metal band structure, and manifests six pairs of fully spin-polarized Weyl points at the Fermi level. When spin-orbit coupling is included, the YN₂ monolayer can realize multiple topological phases, determined based on the magnetization direction. Under in-plane magnetization, the YN₂ monolayer shows either the Weyl state or in-plane QAHE state. Remarkably, the Chern number (±1) and the propagating direction of QAHE edge channels can be continuously switched via shifting the direction of the in-plane magnetic field. When magnetization is applied out-of-plane, the YN₂ monolayer realizes an out-of-plane QAHE phase with a high Chern number of 3. The nontrivial edge states for all the topological phases in the YN₂ monolayer have been clearly identified. This work suggests that 2D YN₂ is an excellent candidate for investigating in-plane QAHE phases in d⁰ ferromagnets.

Higher-Order Band Topology in Twisted Moiré Superlattice

The two-dimensional (2D) twisted bilayer materials with van der Waals coupling have ignited great research interests, paving a new way to explore the emergent quantum phenomena by twist degree of freedom. Generally, with the decreasing of twist angle, the enhanced interlayer coupling will gradually flatten the low-energy bands and isolate them by two high-energy gaps at zero and full filling, respectively. Although the correlation and topological physics in the low-energy flat bands have been intensively studied, little information is available for these two emerging gaps. In this Letter, we predict a 2D second-order topological insulator (SOTI) for twisted bilayer graphene and twisted bilayer boron nitride in both zero and full filling gaps. Employing a tight-binding Hamiltonian based on first-principles calculations, three unique fingerprints of 2D SOTI are identified, that is, nonzero bulk topological index, gapped topological edge state, and in-gap topological corner state. Most remarkably, the 2D SOTI exists in a wide range of commensurate twist angles, which is robust to microscopic structure disorder and twist center, greatly facilitating the possible experimental measurement. Our results not only extend the higher-order band topology to massless and massive twisted moiré superlattice, but also demonstrate the importance of high-energy bands for fully understanding the nontrivial electronics.

Novel topological states of nodal points and nodal rings in 2D planar octagon TiB4

Topological states of matter in two-dimensional (2D) materials have received increasing attention due to their potential applications in nanoscale spintronics. Here, we report the presence of unique topological electronic properties in a 2D planar octagon TiB₄ compound. Particularly, without considering the spin-orbit coupling (SOC), we found that the material showed a coexistence of novel quadratic node (QN), and two different types of nodal rings (NRs), namely type-I and type-II. The protection mechanism of fermions has been fully clarified in this study. Furthermore, these fermions showed clear edge states. It is worth noting that QN had a topological charge of 2 since it is different from linear nodes and exhibit clear Fermi arc edge states. Under lattice strain, we found that the system could further exhibit rich topological phase transition. When SOC was included, we determined that these crossing points open very tiny energy gaps, which were smaller than previously reported 3D and 2D examples. These results show that monolayer TiB₄ is an excellent nodal point and nodal ring semimetal, which also provides a feasible member for studying potential entanglements among multiple fermions.

Observation of a Higher-Order Topological Bound State in the Continuum

Higher-order topological insulators are a recently discovered class of materials that can possess zero-dimensional localized states regardless of the dimension of the system. Here, we experimentally demonstrate that the topological corner-localized modes of higher-order topological systems can be symmetry-protected bound states in the continuum; these states do not hybridize with the surrounding bulk states of the lattice even in the absence of a bulk band gap. This observation expands the scope of bulk-boundary correspondence by showing that protected boundary-localized states can be found within topological bands, in addition to being found in between them.

Boundary Criticality of PT-Invariant Topology and Second-Order Nodal-Line Semimetals

For conventional topological phases, the boundary gapless modes are determined by bulk topological invariants. Based on developing an analytic method to solve higher-order boundary modes, we present PT-invariant 2D topological insulators and 3D topological semimetals that go beyond this bulk-boundary correspondence framework. With unchanged bulk topological invariants, their first-order boundaries undergo transitions separating different phases with second-order boundary zero modes. For the 2D topological insulator, the helical edge modes appear at the transition point for two second-order topological insulator phases with diagonal and off-diagonal corner zero modes, respectively. Accordingly, for the 3D topological semimetal, the criticality corresponds to surface helical Fermi arcs of a Dirac semimetal phase. Interestingly, we find that the 3D system generically belongs to a novel second-order nodal-line semimetal phase, possessing gapped surfaces but a pair of diagonal or off-diagonal hinge Fermi arcs.

Universal Approach to Magnetic Second-Order Topological Insulator

We propose a universal practical approach to realize magnetic second-order topological insulator (SOTI) materials, based on properly breaking the time reversal symmetry in conventional (first-order) topological insulators. The approach works for both three dimensions (3D) and two dimensions (2D), and is particularly suitable for 2D, where it can be achieved by coupling a quantum spin Hall insulator with a magnetic substrate. Using first-principles calculations, we predict bismuthene on EuO(111) surface as the first realistic system for a two-dimensional magnetic SOTI. We explicitly demonstrate the existence of the protected corner states. Benefitting from the large spin-orbit coupling and sizable magnetic proximity effect, these corner states are located in a boundary gap ∼83  meV, and hence can be readily probed in experiment. By controlling the magnetic phase transition, a topological phase transition between a first-order TI and a SOTI can be simultaneously achieved in the system. The effect of symmetry breaking, the connection with filling anomaly, and the experimental detection are discussed.

Engineering Corner States from Two-Dimensional Topological Insulators

We theoretically demonstrate that the second-order topological insulator with robust corner states can be realized in two-dimensional Z_{2} topological insulators by applying an in-plane Zeeman field. The Zeeman field breaks the time-reversal symmetry and thus destroys the Z_{2} topological phase. Nevertheless, it respects some crystalline symmetries and thus can protect the higher-order topological phase. By taking the Kane-Mele model as a concrete example, we find that spin-helical edge states along zigzag boundaries are gapped out by the Zeeman field whereas the in-gap corner state at the intersection between two zigzag edges arises, which is independent of the field orientation. We further show that the corner states are robust against the out-of-plane Zeeman field, staggered sublattice potentials, Rashba spin-orbit coupling, and the buckling of honeycomb lattices, making them experimentally feasible. Similar behaviors can also be found in the well-known Bernevig-Hughes-Zhang model.