1
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Qin Y, Guo H, Pazos S, Xu M, Yan X, Qiao J, Wang J, Zhou P, Chai Y, Hu W, Zhu Z, Li Z, Wen H, Ma Z, Li X, Lanza M, Tang J, Tian H, Liu J. 7D High-Dynamic Spin-Multiplexing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2402378. [PMID: 38940415 PMCID: PMC11434207 DOI: 10.1002/advs.202402378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Revised: 05/31/2024] [Indexed: 06/29/2024]
Abstract
Multiplexing technology creates several orthogonal data channels and dimensions for high-density information encoding and is irreplaceable in large-capacity information storage, and communication, etc. The multiplexing dimensions are constructed by light attributes and spatial dimensions. However, limited by the degree of freedom of interaction between light and material structure parameters, the multiplexing dimension exploitation method is still confused. Herein, a 7D Spin-multiplexing technique is proposed. Spin structures with four independent attributes (color center type, spin axis, spatial distribution, and dipole direction) are constructed as coding basic units. Based on the four independent spin physical effects, the corresponding photoluminescence wavelength, magnetic field, microwave, and polarization are created into four orthogonal multiplexing dimensions. Combined with the 3D of space, a 7D multiplexing method is established, which possesses the highest dimension number compared with 6 dimensions in the previous study. The basic spin unit is prepared by a self-developed laser-induced manufacturing process. The free state information of spin is read out by four physical quantities. Based on the multiple dimensions, the information is highly dynamically multiplexed to enhance information storage efficiency. Moreover, the high-dynamic in situ image encryption/marking is demonstrated. It implies a new paradigm for ultra-high-capacity storage and real-time encryption.
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Affiliation(s)
- Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Sebastian Pazos
- Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mengzhen Xu
- State Key Laboratory of Hydroscience and Engineering, Tsinghua University, Beijing, 100084, China
| | - Xiaobing Yan
- National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices, Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding, 071002, China
| | - Jianzhong Qiao
- School of Automation Science and Electrical Engineering, Beihang University, Beijing, 100191, China
| | - Jia Wang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Weida Hu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhengqiang Zhu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
- Beijing Institute of Aerospace Control Devices, Beijing, 100094, China
| | - Zhonghao Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Huanfei Wen
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Zongmin Ma
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Mario Lanza
- Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
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2
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Körber J, Heiler J, Fuchs P, Flad P, Hesselmeier E, Kuna P, Ul-Hassan J, Knolle W, Becher C, Kaiser F, Wrachtrup J. Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna. NANO LETTERS 2024; 24:9289-9295. [PMID: 39018360 PMCID: PMC11299535 DOI: 10.1021/acs.nanolett.4c02162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2024] [Revised: 06/26/2024] [Accepted: 06/26/2024] [Indexed: 07/19/2024]
Abstract
Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm-thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of ∼34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption line width below 80 MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.
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Affiliation(s)
- Jonathan Körber
- Third
Institute of Physics, University of Stuttgart, Allmandring 13, 70569 Stuttgart, Germany
| | - Jonah Heiler
- Third
Institute of Physics, University of Stuttgart, Allmandring 13, 70569 Stuttgart, Germany
- Materials
Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST), 4422 Belvaux, Luxembourg
- Department
of Physics and Materials Science, University
of Luxembourg, 4422 Belvaux, Luxembourg
| | - Philipp Fuchs
- Universität
des Saarlandes, Fachrichtung Physik, Campus E2.6, 66123 Saarbrücken, Germany
| | - Philipp Flad
- fourth
Physics Institute and Reseach Center SCoPE, University of Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany
| | - Erik Hesselmeier
- Third
Institute of Physics, University of Stuttgart, Allmandring 13, 70569 Stuttgart, Germany
| | - Pierre Kuna
- Third
Institute of Physics, University of Stuttgart, Allmandring 13, 70569 Stuttgart, Germany
| | - Jawad Ul-Hassan
- Department
of Physics, Chemistry and Biology, Linköping
University, 581 83 Linköping, Sweden
| | - Wolfgang Knolle
- Leibniz-Institute
of Surface Engineering (IOM), Permoserstraße 15, 04318 Leipzig, Germany
| | - Christoph Becher
- Universität
des Saarlandes, Fachrichtung Physik, Campus E2.6, 66123 Saarbrücken, Germany
| | - Florian Kaiser
- Third
Institute of Physics, University of Stuttgart, Allmandring 13, 70569 Stuttgart, Germany
- Materials
Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST), 4422 Belvaux, Luxembourg
- Department
of Physics and Materials Science, University
of Luxembourg, 4422 Belvaux, Luxembourg
| | - Jörg Wrachtrup
- Third
Institute of Physics, University of Stuttgart, Allmandring 13, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, Heisenbersgtraße 1, 70569 Stuttgart, Germany
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3
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Hu QC, Xu J, Luo QY, Hu HB, Guo PJ, Liu CY, Zhao S, Zhou Y, Wang JF. Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity. OPTICS LETTERS 2024; 49:2966-2969. [PMID: 38824304 DOI: 10.1364/ol.522770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Accepted: 04/29/2024] [Indexed: 06/03/2024]
Abstract
Over the past decades, spin qubits in silicon carbide (SiC) have emerged as promising platforms for a wide range of quantum technologies. The fluorescence intensity holds significant importance in the performance of quantum photonics, quantum information process, and sensitivity of quantum sensing. In this work, a dual-layer Au/SiO2 dielectric cavity is employed to enhance the fluorescence intensity of a shallow silicon vacancy ensemble in 4H-SiC. Experimental results demonstrate an effective fourfold augmentation in fluorescence counts at saturating laser power, corroborating our theoretical predictions. Based on this, we further investigate the influence of dielectric cavities on the contrast and linewidth of optically detected magnetic resonance (ODMR). There is a 1.6-fold improvement in magnetic field sensitivity. In spin echo experiments, coherence times remain constant regardless of the thickness of dielectric cavities. These experiments pave the way for broader applications of dielectric cavities in SiC-based quantum technologies.
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4
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Luo J, Geng Y, Rana F, Fuchs GD. Room temperature optically detected magnetic resonance of single spins in GaN. NATURE MATERIALS 2024; 23:512-518. [PMID: 38347119 DOI: 10.1038/s41563-024-01803-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Accepted: 01/09/2024] [Indexed: 03/14/2024]
Abstract
High-contrast optically detected magnetic resonance is a valuable property for reading out the spin of isolated defect colour centres at room temperature. Spin-active single defect centres have been studied in wide bandgap materials including diamond, SiC and hexagonal boron nitride, each with associated advantages for applications. We report the discovery of optically detected magnetic resonance in two distinct species of bright, isolated defect centres hosted in GaN. In one group, we find negative optically detected magnetic resonance of a few percent associated with a metastable electronic state, whereas in the other, we find positive optically detected magnetic resonance of up to 30% associated with the ground and optically excited electronic states. We examine the spin symmetry axis of each defect species and establish coherent control over a single defect's ground-state spin. Given the maturity of the semiconductor host, these results are promising for scalable and integrated quantum sensing applications.
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Affiliation(s)
- Jialun Luo
- Department of Physics, Cornell University, Ithaca, NY, USA
| | - Yifei Geng
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
| | - Farhan Rana
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
| | - Gregory D Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
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5
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Borel A, Rapisarda F, Doorn SK, Voisin C, Chassagneux Y. Luminescence Properties of Closely Packed Organic Color Centers Grafted on a Carbon Nanotube. NANO LETTERS 2024; 24:3456-3461. [PMID: 38457689 DOI: 10.1021/acs.nanolett.4c00127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/10/2024]
Abstract
We report on the photoluminescence of pairs of organic color centers in single-wall carbon nanotubes grafted with 3,5-dichlorobenzene. Using various techniques such as intensity correlations, superlocalization microscopy, and luminescence excitation spectroscopy, we distinguish two pairs of color centers grafted on the same nanotube; the distance between the pairs is on the order of several hundreds of nanometers. In contrast, by studying the strong temporal correlations in the spectral diffusion in the framework of the photoinduced Stark effect, we can estimate the distance within each pair to be on the order of a few nanometers. Finally, the electronic population dynamics is investigated using time-resolved luminescence and saturation measurements, showing a biexponential decay with a fast overall recombination (compatible with a fast population transfer between the color centers within a pair) and a weak delayed repopulation of the traps, possibly due to the diffusion of excitons along the tube axis.
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Affiliation(s)
- Antoine Borel
- Laboratoire de physique de l'ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 75005 Paris, France
| | - Federico Rapisarda
- Laboratoire de physique de l'ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 75005 Paris, France
| | - Stephen K Doorn
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Christophe Voisin
- Laboratoire de physique de l'ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 75005 Paris, France
| | - Yannick Chassagneux
- Laboratoire de physique de l'ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 75005 Paris, France
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6
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Wang Y, Su QP, Liu T, Zhang GQ, Feng W, Yu Y, Yang CP. Long-distance transmission of arbitrary quantum states between spatially separated microwave cavities. OPTICS EXPRESS 2024; 32:4728-4744. [PMID: 38297667 DOI: 10.1364/oe.517001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 01/14/2024] [Indexed: 02/02/2024]
Abstract
Long-distance transmission between spatially separated microwave cavities is a crucial area of quantum information science and technology. In this work, we present a method for achieving long-distance transmission of arbitrary quantum states between two microwave cavities, by using a hybrid system that comprises two microwave cavities, two nitrogen-vacancy center ensembles (NV ensembles), two optical cavities, and an optical fiber. Each NV ensemble serves as a quantum transducer, dispersively coupling with a microwave cavity and an optical cavity, which enables the conversion of quantum states between a microwave cavity and an optical cavity. The optical fiber acts as a connector between the two optical cavities. Numerical simulations demonstrate that our method allows for the transfer of an arbitrary photonic qubit state between two spatially separated microwave cavities with high fidelity. Furthermore, the method exhibits robustness against environmental decay, parameter fluctuations, and additive white Gaussian noise. Our approach offers a promising way for achieving long-distance transmission of quantum states between two spatially separated microwave cavities, which may have practical applications in networked large-scale quantum information processing and quantum communication.
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7
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Zhu Y, Yu VWZ, Galli G. First-Principles Investigation of Near-Surface Divacancies in Silicon Carbide. NANO LETTERS 2023; 23:11453-11460. [PMID: 38051297 DOI: 10.1021/acs.nanolett.3c02880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The realization of quantum sensors using spin defects in semiconductors requires a thorough understanding of the physical properties of the defects in the proximity of surfaces. We report a study of the divacancy (VSiVC) in 3C-SiC, a promising material for quantum applications, as a function of surface reconstruction and termination with -H, -OH, -F and oxygen groups. We show that a VSiVC close to hydrogen-terminated (2 × 1) surfaces is a robust spin-defect with a triplet ground state and no surface states in the band gap and with small variations of many of its physical properties relative to the bulk, including the zero-phonon line and zero-field splitting. However, the Debye-Waller factor decreases in the vicinity of the surface and our calculations indicate it may be improved by strain-engineering. Overall our results show that the VSiVC close to SiC surfaces is a promising spin defect for quantum applications, similar to its bulk counterpart.
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Affiliation(s)
- Yizhi Zhu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Victor Wen-Zhe Yu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
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8
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Castelletto S, Lew CTK, Lin WX, Xu JS. Quantum systems in silicon carbide for sensing applications. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014501. [PMID: 38029424 DOI: 10.1088/1361-6633/ad10b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 11/29/2023] [Indexed: 12/01/2023]
Abstract
This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.
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Affiliation(s)
- S Castelletto
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | - C T-K Lew
- School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
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9
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Happacher J, Bocquel J, Dinani HT, Tschudin MA, Reiser P, Broadway DA, Maze JR, Maletinsky P. Temperature-Dependent Photophysics of Single NV Centers in Diamond. PHYSICAL REVIEW LETTERS 2023; 131:086904. [PMID: 37683170 DOI: 10.1103/physrevlett.131.086904] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 04/26/2023] [Accepted: 06/14/2023] [Indexed: 09/10/2023]
Abstract
We present a comprehensive study of the temperature- and magnetic-field-dependent photoluminescence (PL) of individual NV centers in diamond, spanning the temperature-range from cryogenic to ambient conditions. We directly observe the emergence of the NV's room-temperature effective excited-state structure and provide a clear explanation for a previously poorly understood broad quenching of NV PL at intermediate temperatures around 50 K, as well as the subsequent revival of NV PL. We develop a model based on two-phonon orbital averaging that quantitatively explains all of our findings, including the strong impact that strain has on the temperature dependence of the NV's PL. These results complete our understanding of orbital averaging in the NV excited state and have significant implications for the fundamental understanding of the NV center and its applications in quantum sensing.
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Affiliation(s)
- Jodok Happacher
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Juanita Bocquel
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Hossein T Dinani
- Escuela de Ingeniería, Facultad de Ciencias, Ingeniería y Tecnología, Universidad Mayor, Santiago 7500994, Chile
| | - Märta A Tschudin
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Patrick Reiser
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - David A Broadway
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Jeronimo R Maze
- Facultad de Física, Pontificia Universidad Católica de Chile, Santiago 7820436, Chile
| | - Patrick Maletinsky
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
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10
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Jiang Z, Cai H, Cernansky R, Liu X, Gao W. Quantum sensing of radio-frequency signal with NV centers in SiC. SCIENCE ADVANCES 2023; 9:eadg2080. [PMID: 37196081 DOI: 10.1126/sciadv.adg2080] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Accepted: 04/12/2023] [Indexed: 05/19/2023]
Abstract
Silicon carbide is an emerging platform for quantum technologies that provides wafer scale and low-cost industrial fabrication. The material also hosts high-quality defects with long coherence times that can be used for quantum computation and sensing applications. Using an ensemble of nitrogen-vacancy centers and an XY8-2 correlation spectroscopy approach, we demonstrate a room-temperature quantum sensing of an artificial AC field centered at ~900 kHz with a spectral resolution of 10 kHz. Implementing the synchronized readout technique, we further extend the frequency resolution of our sensor to 0.01 kHz. These results pave the first steps for silicon carbide quantum sensors toward low-cost nuclear magnetic resonance spectrometers with a wide range of practical applications in medical, chemical, and biological analysis.
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Affiliation(s)
- Zhengzhi Jiang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
| | - Robert Cernansky
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- Institute for Quantum Optics and IQST, Ulm University, Albert-Einstein-Allee 11, Ulm D-89081, Germany
| | - Xiaogang Liu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
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11
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Quan WK, Liu L, Luo QY, Liu XD, Wang JF. Fiber-coupled silicon carbide divacancy magnetometer and thermometer. OPTICS EXPRESS 2023; 31:15592-15598. [PMID: 37157657 DOI: 10.1364/oe.483411] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Divacancy in silicon carbide has become an important solid-state system for quantum metrologies. To make it more beneficial for practical applications, we realize a fiber-coupled divacancy-based magnetometer and thermometer simultaneously. First, we realize an efficient coupling between the divacancy in a silicon carbide slice with a multimode fiber. Then the optimization of the power broadening in optically detected magnetic resonance (ODMR) of divacancy is performed to obtain a higher sensing sensitivity of 3.9 μT/Hz1/2. We then use it to detect the strength of an external magnetic field. Finally, we use the Ramsey methods to realize a temperature sensing with a sensitivity of 163.2 mK/Hz1/2. The experiments demonstrate that the compact fiber-coupled divacancy quantum sensor can be used for multiple practical quantum sensing.
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12
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Zhou JY, Li Q, Hao ZH, Lin WX, He ZX, Liang RJ, Guo L, Li H, You L, Tang JS, Xu JS, Li CF, Guo GC. Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide Membranes. NANO LETTERS 2023; 23:4334-4343. [PMID: 37155148 DOI: 10.1021/acs.nanolett.3c00568] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using a surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin-defect-based quantum applications in mature SiC materials.
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Affiliation(s)
- Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Rui-Jian Liang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
| | - Liping Guo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China
| | - Lixing You
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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13
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Luo QY, Zhao S, Hu QC, Quan WK, Zhu ZQ, Li JJ, Wang JF. High-sensitivity silicon carbide divacancy-based temperature sensing. NANOSCALE 2023; 15:8432-8436. [PMID: 37093058 DOI: 10.1039/d3nr00430a] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Color centers in silicon carbide have become potentially versatile quantum sensors. Particularly, wide temperature-range temperature sensing has been realized in recent years. However, the sensitivity is limited due to the short dephasing time of the color centers. In this work, we developed a high-sensitivity silicon carbide divacancy-based thermometer using the thermal Carr-Purcell-Meiboom-Gill (TCPMG) method. First, the zero-field splitting D of the PL6 divacancy as a function of temperature was measured with a linear slope of -99.7 kHz K-1. The coherence times of TCPMG pulses linearly increased with the pulse number and the longest coherence time was about 21 μs, which was ten times higher than . The corresponding temperature-sensing sensitivity was 13.4 mK Hz-1/2, which was about 15 times higher than previous results. Finally, we monitored the laboratory temperature variations for 24 hours using the TCMPG pulse. The experiments pave the way for the application of silicon carbide-based high-sensitivity thermometers in the semiconductor industry, biology, and materials sciences.
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Affiliation(s)
- Qin-Yue Luo
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Shuang Zhao
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Qi-Cheng Hu
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Wei-Ke Quan
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Zi-Qi Zhu
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Jia-Jun Li
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Jun-Feng Wang
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
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14
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Wang JF, Liu L, Liu XD, Li Q, Cui JM, Zhou DF, Zhou JY, Wei Y, Xu HA, Xu W, Lin WX, Yan JW, He ZX, Liu ZH, Hao ZH, Li HO, Liu W, Xu JS, Gregoryanz E, Li CF, Guo GC. Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide. NATURE MATERIALS 2023; 22:489-494. [PMID: 36959503 DOI: 10.1038/s41563-023-01477-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2022] [Accepted: 01/12/2023] [Indexed: 06/18/2023]
Abstract
Pressure-induced magnetic phase transitions are attracting interest as a means to detect superconducting behaviour at high pressures in diamond anvil cells, but determining the local magnetic properties of samples is a challenge due to the small volumes of sample chambers. Optically detected magnetic resonance of nitrogen vacancy centres in diamond has recently been used for the in situ detection of pressure-induced phase transitions. However, owing to their four orientation axes and temperature-dependent zero-field splitting, interpreting these optically detected magnetic resonance spectra remains challenging. Here we study the optical and spin properties of implanted silicon vacancy defects in 4H-silicon carbide that exhibit single-axis and temperature-independent zero-field splitting. Using this technique, we observe the magnetic phase transition of Nd2Fe14B at about 7 GPa and map the critical temperature-pressure phase diagram of the superconductor YBa2Cu3O6.6. These results highlight the potential of silicon vacancy-based quantum sensors for in situ magnetic detection at high pressures.
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Affiliation(s)
- Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- College of Physics, Sichuan University, Chengdu, China
| | - Lin Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Xiao-Di Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Jin-Ming Cui
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Di-Fan Zhou
- Physics Department, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai, China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Yu Wei
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, China
| | - Hai-An Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Wan Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Jin-Wei Yan
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Hai-Ou Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Wen Liu
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China.
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
| | - Eugene Gregoryanz
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.
- Centre for Science at Extreme Conditions and School of Physics and Astronomy, University of Edinburgh, Edinburgh, UK.
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China.
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
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15
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Yan FF, Wang JF, He ZX, Li Q, Lin WX, Zhou JY, Xu JS, Li CF, Guo GC. Magnetic-field-dependent spin properties of divacancy defects in silicon carbide. NANOSCALE 2023; 15:5300-5304. [PMID: 36810581 DOI: 10.1039/d2nr06624f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, spin defects in silicon carbide have become promising platforms for quantum sensing, quantum information processing and quantum networks. It has been shown that their spin coherence times can be dramatically extended with an external axial magnetic field. However, little is known about the effect of magnetic-angle-dependent coherence time, which is an essential complement to defect spin properties. Here, we investigate the optically detected magnetic resonance (ODMR) spectra of divacancy spins in silicon carbide with a magnetic field orientation. The ODMR contrast decreases as the off-axis magnetic field strength increases. We then study the coherence times of divacancy spins in two different samples with magnetic field angles, and both of the coherence times decrease with the angle. The experiments pave the way for all-optical magnetic field sensing and quantum information processing.
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Affiliation(s)
- Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- College of Physics, Sichuan University, Chengdu, Sichuan 610065, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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16
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Quan WK, Liu L, Luo QY, Liu XD, Wang JF. Fiber-integrated silicon carbide silicon-vacancy-based magnetometer. OPTICS LETTERS 2023; 48:1423-1426. [PMID: 36946943 DOI: 10.1364/ol.476305] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Silicon vacancies in silicon carbide have drawn much attention for various types of quantum sensing. However, most previous experiments are realized using confocal scanning systems, which limits their practical applications. In this work, we demonstrate a compact fiber-integrated silicon carbide silicon-vacancy-based magnetometer at room temperature. First, we effectively couple the silicon vacancy in a tiny silicon carbide slice with an optical fiber tip and realize the readout of the spin signal through the fiber at the same time. We then study the optically detected magnetic resonance spectra at different laser and microwave powers, obtaining an optimized magnetic field sensitivity of 12.3 μT/Hz 12. Based on this, the magnetometer is used to measure the strength and polar angle of an external magnetic field. Through these experiments, we have paved the way for fiber-integrated silicon-vacancy-based magnetometer applications in practical environments, such as geophysics and biomedical sensing.
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17
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Inam FA, Castelletto S. Metal-Dielectric Nanopillar Antenna-Resonators for Efficient Collected Photon Rate from Silicon Carbide Color Centers. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:195. [PMID: 36616105 PMCID: PMC9824870 DOI: 10.3390/nano13010195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Revised: 12/25/2022] [Accepted: 12/28/2022] [Indexed: 06/17/2023]
Abstract
A yet unresolved challenge in developing quantum technologies based on color centres in high refractive index semiconductors is the efficient fluorescence enhancement of point defects in bulk materials. Optical resonators and antennas have been designed to provide directional emission, spontaneous emission rate enhancement and collection efficiency enhancement at the same time. While collection efficiency enhancement can be achieved by individual nanopillars or nanowires, fluorescent emission enhancement is achieved using nanoresonators or nanoantennas. In this work, we optimise the design of a metal-dielectric nanopillar-based antenna/resonator fabricated in a silicon carbide (SiC) substrate with integrated quantum emitters. Here we consider various color centres known in SiC such as silicon mono-vacancy and the carbon antisite vacancy pair, that show single photon emission and quantum sensing functionalities with optical electron spin read-out, respectively. We model the dipole emission fluorescence rate of these color centres into the metal-dielectric nanopillar hybrid antenna resonator using multi-polar electromagnetic scattering resonances and near-field plasmonic field enhancement and confinement. We calculate the fluorescence collected photon rate enhancement for these solid state vacancy-centers in SiC in these metal-dielectric nanopillar resonators, showing a trade-off effect between the collection efficiency and radiative Purcell factor enhancement. We obtained a collected photon rate enhancement from a silicon monovacancy vacancy center embedded in an optimised hybrid antenna-resonator two orders of magnitude larger compared to the case of the color centres in bulk material.
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Affiliation(s)
- Faraz Ahmed Inam
- Department of Physics, Aligarh Muslim University, Aligarh 20002, India
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18
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Liu L, Wang JF, Liu XD, Xu HA, Cui JM, Li Q, Zhou JY, Lin WX, He ZX, Xu W, Wei Y, Liu ZH, Wang P, Hao ZH, Ding JF, Li HO, Liu W, Li H, You L, Xu JS, Gregoryanz E, Li CF, Guo GC. Coherent Control and Magnetic Detection of Divacancy Spins in Silicon Carbide at High Pressures. NANO LETTERS 2022; 22:9943-9950. [PMID: 36507869 DOI: 10.1021/acs.nanolett.2c03378] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Spin defects in silicon carbide appear to be a promising tool for various quantum technologies, especially for quantum sensing. However, this technique has been used only at ambient pressure until now. Here, by combining this technique with diamond anvil cell, we systematically study the optical and spin properties of divacancy defects created at the surface of SiC at pressures up to 40 GPa. The zero-field-splitting of the divacancy spins increases linearly with pressure with a slope of 25.1 MHz/GPa, which is almost two-times larger than that of nitrogen-vacancy centers in diamond. The corresponding pressure sensing sensitivity is about 0.28 MPa/Hz-1/2. The coherent control of divacancy demonstrates that coherence time decreases as pressure increases. Based on these, the pressure-induced magnetic phase transition of Nd2Fe14B sample at high pressures was detected. These experiments pave the way to use divacancy in quantum technologies such as pressure sensing and magnetic detection at high pressures.
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Affiliation(s)
- Lin Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- College of Physics, Sichuan University, Chengdu, Sichuan610065, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Xiao-Di Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Hai-An Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Jin-Ming Cui
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Wan Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Yu Wei
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui230027, China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Pu Wang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Jun-Feng Ding
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Hai-Ou Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Wen Liu
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Hao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, China
| | - Lixing You
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Eugene Gregoryanz
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
- Centre for Science at Extreme Conditions, School of Physics and Astronomy, University of Edinburgh, EdinburghEH9 3FD, U.K
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
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19
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Liu W, Ivády V, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Guo NJ, Yan FF, Li Q, Wang JF, Xu JS, Liu X, Zhou ZQ, Dong Y, Chen XD, Sun FW, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent dynamics of multi-spin V[Formula: see text] center in hexagonal boron nitride. Nat Commun 2022; 13:5713. [PMID: 36175507 PMCID: PMC9522675 DOI: 10.1038/s41467-022-33399-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Accepted: 09/14/2022] [Indexed: 11/09/2022] Open
Abstract
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related phenomena of a negatively charged boron vacancy (V[Formula: see text]) spin ensemble in hBN. We report on different dynamics of the V[Formula: see text] spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting multiple-frequency dynamical oscillation as beat in the Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of V[Formula: see text] and reveal that the nuclear spins can be driven via the strong electron nuclear coupling existing in V[Formula: see text] center, which can be modulated by the magnetic field and microwave field.
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Affiliation(s)
- Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Viktor Ivády
- Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Street 38, D-01187 Dresden, Germany
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zong-Quan Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yang Dong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiang-Dong Chen
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fang-Wen Sun
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Adam Gali
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., H-1111 Budapest, Hungary
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
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20
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Berzins A, Grube H, Lazda R, Hannig MA, Smits J, Fescenko I. Tunable magnetic field source for magnetic field imaging microscopy. Ultramicroscopy 2022; 242:113624. [DOI: 10.1016/j.ultramic.2022.113624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Revised: 07/21/2022] [Accepted: 09/24/2022] [Indexed: 11/25/2022]
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21
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Optical charge injection and coherent control of a quantum-dot spin-qubit emitting at telecom wavelengths. Nat Commun 2022; 13:748. [PMID: 35136062 PMCID: PMC8826386 DOI: 10.1038/s41467-022-28328-2] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2021] [Accepted: 01/17/2022] [Indexed: 11/09/2022] Open
Abstract
Solid-state quantum emitters with manipulable spin-qubits are promising platforms for quantum communication applications. Although such light-matter interfaces could be realized in many systems only a few allow for light emission in the telecom bands necessary for long-distance quantum networks. Here, we propose and implement an optically active solid-state spin-qubit based on a hole confined in a single InAs/GaAs quantum dot grown on an InGaAs metamorphic buffer layer emitting photons in the C-band. We lift the hole spin-degeneracy using an external magnetic field and demonstrate hole injection, initialization, read-out and complete coherent control using picosecond optical pulses. These results showcase a solid-state spin-qubit platform compatible with preexisting optical fiber networks.
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22
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Lee EMY, Yu A, de Pablo JJ, Galli G. Stability and molecular pathways to the formation of spin defects in silicon carbide. Nat Commun 2021; 12:6325. [PMID: 34732705 PMCID: PMC8566517 DOI: 10.1038/s41467-021-26419-0] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Accepted: 09/28/2021] [Indexed: 12/18/2022] Open
Abstract
Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or annihilation are poorly understood. Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate-the divacancy complex (VV) in silicon carbide (SiC). Using atomistic models, enhanced sampling simulations, and density functional theory calculations, we find that VV formation is a thermally activated process that competes with the conversion of silicon (VSi) to carbon monovacancies (VC), and that VV reorientation can occur without dissociation. We also find that increasing the concentration of VSi relative to VC favors the formation of divacancies. Moreover, we identify pathways to create spin defects consisting of antisite-double vacancy complexes and determine their electronic properties. The detailed view of the mechanisms that underpin the formation and dynamics of spin defects presented here may facilitate the realization of qubits in an industrially relevant material.
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Affiliation(s)
- Elizabeth M Y Lee
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Alvin Yu
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
- Institute for Biophysical Dynamics and James Franck Institute, The University of Chicago, Chicago, IL, 60637, USA
| | - Juan J de Pablo
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA.
- Argonne National Laboratory, 9700 Cass Avenue, Lemont, IL, 60439, USA.
| | - Giulia Galli
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA.
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA.
- Argonne National Laboratory, 9700 Cass Avenue, Lemont, IL, 60439, USA.
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23
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Xie T, Zhao Z, Kong X, Ma W, Wang M, Ye X, Yu P, Yang Z, Xu S, Wang P, Wang Y, Shi F, Du J. Beating the standard quantum limit under ambient conditions with solid-state spins. SCIENCE ADVANCES 2021; 7:7/32/eabg9204. [PMID: 34362736 PMCID: PMC8346219 DOI: 10.1126/sciadv.abg9204] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Accepted: 06/21/2021] [Indexed: 05/16/2023]
Abstract
The use of entangled sensors improves the precision limit from the standard quantum limit (SQL) to the Heisenberg limit. Most previous experiments beating the SQL are performed on the sensors that are well isolated under extreme conditions. Here, we demonstrate a sub-SQL interferometer at ambient conditions by using a multispin system, namely, the nitrogen-vacancy (NV) defect in diamond. We achieve two-spin interference with a phase sensitivity of 1.79 ± 0.06 dB beyond the SQL and three-spin interference with a phase sensitivity of 2.77 ± 0.10 dB. Besides, a magnetic sensitivity of 0.87 ± 0.09 dB beyond the SQL is achieved by two-spin interference for detecting a real magnetic field. Particularly, the deterministic and joint initialization of NV negative state, NV electron spin, and two nuclear spins is realized at room temperature. The techniques used here are of fundamental importance for quantum sensing and computing, and naturally applicable to other solid-state spin systems.
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Affiliation(s)
- Tianyu Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhiyuan Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xi Kong
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
| | - Wenchao Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Mengqi Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xiangyu Ye
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
| | - Pei Yu
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhiping Yang
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
| | - Shaoyi Xu
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
| | - Pengfei Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ya Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Fazhan Shi
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jiangfeng Du
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
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24
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Li Q, Wang JF, Yan FF, Zhou JY, Wang HF, Liu H, Guo LP, Zhou X, Gali A, Liu ZH, Wang ZQ, Sun K, Guo GP, Tang JS, Li H, You LX, Xu JS, Li CF, Guo GC. Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast. Natl Sci Rev 2021; 9:nwab122. [PMID: 35668749 PMCID: PMC9160373 DOI: 10.1093/nsr/nwab122] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/14/2021] [Revised: 06/21/2021] [Accepted: 06/21/2021] [Indexed: 11/14/2022] Open
Abstract
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room-temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2\documentclass[12pt]{minimal}
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}{}$\%$\end{document}, and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast (\documentclass[12pt]{minimal}
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}{}$-30\%$\end{document}) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.
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Affiliation(s)
- Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Han-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - He Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Li-Ping Guo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People’s Republic of China
| | - Xiong Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People’s Republic of China
| | - Adam Gali
- Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut. 8, H-1111, Hungary
- Wigner Research centre for Physics, PO. Box 49, H-1525, Hungary
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Zu-Qing Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Kai Sun
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Guo-Ping Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Hao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(CAS), Shanghai 200050, People’s Republic of China
| | - Li-Xing You
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(CAS), Shanghai 200050, People’s Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
- CAS centre for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
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25
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Robust coherent control of solid-state spin qubits using anti-Stokes excitation. Nat Commun 2021; 12:3223. [PMID: 34050146 PMCID: PMC8163787 DOI: 10.1038/s41467-021-23471-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2020] [Accepted: 04/30/2021] [Indexed: 11/08/2022] Open
Abstract
Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing. Optically detected magnetic resonance of defect spins typically relies on Stokes excitation, in which the excitation energy is larger than that of the emitted photon. Here, the authors use the opposite regime of anti-Stokes excitation to detect Si vacancy spins in SiC, with a threefold improvement in signal contrast.
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26
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27
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Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors. NANOMATERIALS 2020; 11:nano11010072. [PMID: 33396227 PMCID: PMC7823324 DOI: 10.3390/nano11010072] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Revised: 12/26/2020] [Accepted: 12/26/2020] [Indexed: 12/31/2022]
Abstract
Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal material damage. The number of color centers formed exhibited power-law scaling with the laser fabrication energy indicating that the color centers are created by photoinduced ionization. This work highlights the simplicity and flexibility of laser fabrication of color center arrays in relevant materials for quantum applications.
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28
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Follmer AH, Ribson RD, Oyala PH, Chen GY, Hadt RG. Understanding Covalent versus Spin-Orbit Coupling Contributions to Temperature-Dependent Electron Spin Relaxation in Cupric and Vanadyl Phthalocyanines. J Phys Chem A 2020; 124:9252-9260. [PMID: 33112149 DOI: 10.1021/acs.jpca.0c07860] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
Recent interest in transition-metal complexes as potential quantum bits (qubits) has reinvigorated the investigation of fundamental contributions to electron spin relaxation in various ligand scaffolds. From quantum computers to chemical and biological sensors, interest in leveraging the quantum properties of these molecules has opened a discussion of the requirements to maintain coherence over a large temperature range, including near room temperature. Here we compare temperature-, magnetic field position-, and concentration-dependent electron spin relaxation in copper(II) phthalocyanine (CuPc) and vanadyl phthalocyanine (VOPc) doped into diamagnetic hosts. While VOPc demonstrates coherence up to room temperature, CuPc coherence times become rapidly T1-limited with increasing temperature, despite featuring a more covalent ground-state wave function than VOPc. As rationalized by a ligand field model, this difference is ascribed to different spin-orbit coupling (SOC) constants for Cu(II) versus V(IV). The manifestation of SOC contributions to spin-phonon coupling and electron spin relaxation in different ligand fields is discussed, allowing for a further understanding of the competing roles of SOC and covalency in electron spin relaxation.
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Affiliation(s)
- Alec H Follmer
- Division of Chemistry and Chemical Engineering, Arthur Amos Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Ryan D Ribson
- Division of Chemistry and Chemical Engineering, Arthur Amos Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Paul H Oyala
- Division of Chemistry and Chemical Engineering, Arthur Amos Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Grace Y Chen
- Division of Chemistry and Chemical Engineering, Arthur Amos Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Ryan G Hadt
- Division of Chemistry and Chemical Engineering, Arthur Amos Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125, United States
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29
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Mu Z, Zargaleh SA, von Bardeleben HJ, Fröch JE, Nonahal M, Cai H, Yang X, Yang J, Li X, Aharonovich I, Gao W. Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide. NANO LETTERS 2020; 20:6142-6147. [PMID: 32644809 DOI: 10.1021/acs.nanolett.0c02342] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.
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Affiliation(s)
- Zhao Mu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Soroush Abbasi Zargaleh
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Hans Jürgen von Bardeleben
- Campus Pierre et Marie Curie, Institut des Nanosciences de Paris, Sorbonne Université, 4, place Jussieu, 75005 Paris, France
| | - Johannes E Fröch
- School of Mathematical and Physical Sciences and ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milad Nonahal
- School of Mathematical and Physical Sciences and ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Xinge Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jianqun Yang
- School of Materials Science and Engineering, Harbin institute of Technology, Harbin 15000, P. R. China
| | - Xingji Li
- School of Materials Science and Engineering, Harbin institute of Technology, Harbin 15000, P. R. China
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences and ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371 Singapore
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