Approaching Charge Separation Efficiency to Unity without Charge Recombination

Ferro/Nonferroelectric Vertical Heterostructure Superlattice as a Visible-Light-Responsive Photocatalyst: A DFT Prediction

Developing narrow-band-gap ferroelectric semiconducting photocatalysts is a promising strategy for efficient photocatalytic water splitting with high energy conversion efficiency. Within this context, six ferro/nonferroelectric vertical heterostructure superlattices (VHSs) are constructed in this work by stacking ferroelectric SiS or GeS with nonferroelectric layered organic photocatalysts (C2N, g-C3N4, and melon), layer by layer. The geometry and electronic structures of these six VHSs are systematically investigated by density functional theory calculations. Consequently, four VHSs (SiS/g-C3N4, GeS/C2N, GeS/g-C3N4, and GeS/melon) are predicted to simultaneously possess several important and highly desirable features for photocatalytic water splitting, namely excellent visible-light adsorption, remarkable spontaneous polarization (0.49-0.70 C/m2), spatial charge separation, as well as suitable band-edge positions, thus serving as potential candidates for photocatalytic water splitting to produce hydrogen. This work not only provides a new strategy to use narrow-band-gap ferroelectric semiconductors for photocatalytic water splitting but also offers inspiration for developing photocatalysts with high energy conversion efficiency.

Unlocking the Potential of Nanoribbon-Based Sb2S3/Sb2Se3 van-der-Waals Heterostructure for Solar-Energy-Conversion and Optoelectronics Applications

High-performance nanosized optoelectronic devices based on van der Waals (vdW) heterostructures have significant potential for use in a variety of applications. However, the investigation of nanoribbon-based vdW heterostructures are still mostly unexplored. In this study, based on first-principles calculations, we demonstrate that a Sb2S3/Sb2Se3 vdW heterostructure, which is formed by isostructural nanoribbons of stibnite (Sb2S3) and antimonselite (Sb2Se3), possesses a direct band gap with a typical type-II band alignment, which is suitable for optoelectronics and solar energy conversion. Optical absorption spectra show broad profiles in the visible and UV ranges for all of the studied configurations, indicating their suitability for photodevices. Additionally, in 1D nanoribbons, we see sharp peaks corresponding to strongly bound excitons in a fashion similar to that of other quasi-1D systems. The Sb2S3/Sb2Se3 heterostructure is predicted to exhibit a remarkable power conversion efficiency (PCE) of 28.2%, positioning it competitively alongside other extensively studied two-dimensional (2D) heterostructures.

Design of a Double-Photoelectrode Sensing System with a Metal-Organic Framework-Based Antenna-like Strategy for Highly Sensitive Detection of PD-L1

Currently, the construction of heterojunctions as a method to enhance photoelectrochemical (PEC) activity has shown prospective applications in the analytical field. Restricted by carrier separation at the interface, developing a heterojunction sensing platform with high sensitivity remains challenging. Here, a double-photoelectrode PEC sensing platform was fabricated based on an antenna-like strategy by integrating MIL-68(In)-NH2, a p-type metal-organic framework (MOF) photocatalyst, as a photocathode with the type-II heterojunction of CdSe/MgIn2S4 as a photoanode synchronously. According to the ligand-to-metal charge transition (LMCT), the photo-generated carriers of MIL-68(In)-NH2 transferred from the organic ligand to the metal cluster, which provides an efficient antenna-like transfer path for the charge at the heterojunction interface. In addition, the sufficient Fermi energy difference between the double photoelectrode provides the continuous internal driving force required for rapid carrier separation at the anode detection interface, significantly improving the photoelectric conversion efficiency. Hence, compared with the traditional heterojunction single electrode, the photocurrent response of the double-photoelectrode PEC sensing platform developed using the antenna-like strategy is 2.5 times stronger. Based on this strategy, we constructed a PEC biosensor for the detection of programed death-ligand 1 (PD-L1). The elaborated PD-L1 biosensor exhibited sensitive and precise detection capability with a detection range of 1 × 10-5 to 1 × 103 ng/mL and a lower detection limit of 3.26 × 10-6 ng/mL and demonstrated the feasibility of serum sample detection, providing a novel and viable approach for the unmet clinical need of PD-L1 quantification. More importantly, the charge separation mechanism at the heterojunction interface proposed in this study provides new creative inspiration for designing sensors with high-sensitivity PEC performance.

Improved Carrier Lifetime in BiVO4 by Spin Protection

Mechanistic understanding of the effect bulk defects have on carrier dynamics at the quantum level is crucial to suppress associated midgap mediated charge recombination in semiconductors yet many questions remain unexplored. Here, by employing ab initio quantum dynamics simulation and taking BiVO₄ with oxygen vacancies (Ov) as a model system we demonstrate a spin protection mechanism for suppressed charge recombination. The carrier lifetime is significantly improved in the high spin defect system. The lifetime can be optimized by tuning the Ov concentration to minimize the nonradiative relaxation. Our work addresses literature ambiguities and contradictions about the role of bulk Ov in charge recombination and provides a route for defect engineering of semiconductors with enhanced carrier dynamics.

Exceptional Photocatalytic Activities of rGO Modified (B,N) Co-Doped WO3 , Coupled with CdSe QDs for One Photon Z-Scheme System: A Joint Experimental and DFT Study

Artificial Z-scheme, a tandem structure with two-step excitation process, has gained significant attention in energy production and environmental remediation. By effectively connecting and matching the band-gaps of two different photosystems, it is significant to utilize more photons for excellent photoactivity. Herein, a novel one-photon (same energy-two-photon) Z-scheme system is constructed between rGO modified boron-nitrogen co-doped-WO₃ , and coupled CdSe quantum dots-(QDs). The coctalyst-0.5%Rh_x Cr₂ O₃ (0.5RCr) modified amount-optimized sample 6%CdSe/1%rGO3%BN-WO₃ revealed an unprecedented visible-light driven overall-water-splitting to produce ≈51 µmol h^-1 g^-1 H₂ and 25.5 µmol h^-1 g^-1 O₂ , and it remained unchanged for 5 runs in 30 h. This superior performance is ascribed to the one-photon Z-scheme, which simultaneously stimulates a two photocatalysts system, and enhanced charge separation as revealed by various spectroscopy techniques. The density-functional theory is further utilized to understand the origin of this performance enhancement. This work provides a feasible strategy for constructing an efficient one-photon Z-scheme for practical applications.

Growth of High-Quality Monolayer Transition Metal Dichalcogenide Nanocrystals by Chemical Vapor Deposition and Their Photoluminescence and Electrocatalytic Properties

Two-dimensional transition metal dichalcogenide (TMDC) nanocrystals (NCs) exhibit unique optical and electrocatalytic properties. However, the growth of uniform and high-quality NCs of monolayer TMDC remains a challenge. Until now, most of them are synthesized via a solution-based hydrothermal process or ultrasonic exfoliation method, in which the capping ligands introduced from organic solution often quench the optical and electrocatalytic properties of TMDC NCs. Moreover, it is difficult to homogeneously disperse the solution-based TMDC NCs on a substrate for device fabrication, since the dispersed NCs can easily aggregate. Here, we put forward a novel CVD method to grow closely spaced MoS₂ NCs around 5 nm in lateral size. TEM and AFM characterizations demonstrate the monolayer and high-crystalline nature of MoS₂ NCs. An obvious blue-shift with 130 meV in photoluminescence signals can be observed. The MoS₂ NCs also show an outstanding surface-enhanced Raman scattering for organic molecules due to their localized surface plasmon and abundant edge sites and exhibit excellent electrocatalytic properties for the hydrogen-evolution reaction with a very low onset potential of ∼50 mV and Tafel slope of ∼57 mV/decade. Finally, we further demonstrate this kind of CVD method as a versatile platform for the growth of other TMDC NCs, such as WSe₂ and MoSe₂ NCs.

Strong UV laser absorption source near 355 nm in fused silica and its origination

As a high-performance optical material, fused silica is widely applied in high-power laser and photoelectric systems. However, laser induced damage (LID) of fused silica severely limits the output power and performance of these systems. Due to the values in strong field physics and improving the load capacity and performance of high power systems at UV laser, LID at 355 nm of fused silica has attracted much attention. It has been found that, even be treated by advanced processing technologies, the actual damage threshold of fused silica at 355 nm is far below the intrinsic threshold. It means that there is an absorption source near 355 nm in fused silica. However, to date, the absorption source is still unknown. In this paper, a absorption source near 355 nm is found by first-principles calculations. We find that the absorption source near 355 nm is neutral oxygen-vacancy defect (NOV, ≡Si-Si≡) and this defect originates from the oxygen deficiency of fused silica. Our results indicate that NOV defect can be taken as a damage precursor for 355 nm UV laser, and this precursor can be obviously reduced by increasing the ratio of oxygen to silicon. Present work is valuable for exploring damage mechanisms and methods to improve the damage threshold of fused silica at UV laser.

First-principles study on the strain-mediated g-C3N4/blue phosphorene heterostructures for promising photocatalytic performance

Well-designed two-dimensional heterogeneous photocatalysts have attracted significant attention due to the enhancement in visible-light absorption and effective charge separation. In this paper, the electronic and optical properties of g-C₃N₄/BlueP (blue phosphorene) heterojunction under varying strains were investigated systematically by first-principles calculations. The results showed that the type transformation of g-C₃N₄/BlueP heterojunction can be achieved by suitable biaxial strain. The CBM was found to be composed of g-C₃N₄as electron acceptor, while the VBM was contributed by BlueP as electron donor which solved the problem of high electron-hole recombination of type-I heterostructures. The band gap and band edge alignment under -6% to -8% compressive biaxial strain could satisfy the REDOX (reduction-oxidation) potential of photolysis water. A wide optical response range and good absorbance were also observed for the heterostructure under strain, which improved the solar utilization rate compared with individual g-C₃N₄and BlueP.