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Wu Y, Wang Y, Bao D, Deng X, Zhang S, Yu-Chun L, Ke S, Liu J, Liu Y, Wang Z, Ham P, Hanna A, Pan J, Hu X, Li Z, Zhou J, Wang C. Emerging probing perspective of two-dimensional materials physics: terahertz emission spectroscopy. LIGHT, SCIENCE & APPLICATIONS 2024; 13:146. [PMID: 38951490 PMCID: PMC11217405 DOI: 10.1038/s41377-024-01486-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Revised: 04/09/2024] [Accepted: 05/15/2024] [Indexed: 07/03/2024]
Abstract
Terahertz (THz) emission spectroscopy (TES) has emerged as a highly effective and versatile technique for investigating the photoelectric properties of diverse materials and nonlinear physical processes in the past few decades. Concurrently, research on two-dimensional (2D) materials has experienced substantial growth due to their atomically thin structures, exceptional mechanical and optoelectronic properties, and the potential for applications in flexible electronics, sensing, and nanoelectronics. Specifically, these materials offer advantages such as tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. By applying TES to investigate the 2D materials, their interfaces and heterostructures, rich information about the interplay among photons, charges, phonons and spins can be unfolded, which provides fundamental understanding for future applications. Thus it is timely to review the nonlinear processes underlying THz emission in 2D materials including optical rectification, photon-drag, high-order harmonic generation and spin-to-charge conversion, showcasing the rich diversity of the TES employed to unravel the complex nature of these materials. Typical applications based on THz emissions, such as THz lasers, ultrafast imaging and biosensors, are also discussed. Step further, we analyzed the unique advantages of spintronic terahertz emitters and the future technological advancements in the development of new THz generation mechanisms leading to advanced THz sources characterized by wide bandwidth, high power and integration, suitable for industrial and commercial applications. The continuous advancement and integration of TES with the study of 2D materials and heterostructures promise to revolutionize research in different areas, including basic materials physics, novel optoelectronic devices, and chips for post-Moore's era.
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Affiliation(s)
- Yifei Wu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yuqi Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Di Bao
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xiaonan Deng
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Simian Zhang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Lin Yu-Chun
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Shengxian Ke
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jianing Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yingjie Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zeli Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Pingren Ham
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Andrew Hanna
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jiaming Pan
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xinyue Hu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zhengcao Li
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Ji Zhou
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
- Beijing Advanced Innovation Center for Integrated Circuits, 100084, Beijing, China.
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Xiang L, Jin H, Wang J. Quantifying the photocurrent fluctuation in quantum materials by shot noise. Nat Commun 2024; 15:2012. [PMID: 38443381 PMCID: PMC10914713 DOI: 10.1038/s41467-024-46264-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 02/21/2024] [Indexed: 03/07/2024] Open
Abstract
The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.
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Affiliation(s)
- Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- Department of Physics, The University of Science and Technology of China, Hefei, China.
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Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
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Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
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Connelly BC, Taylor PJ, de Coster GJ. Emergence of threefold symmetric helical photocurrents in epitaxial low twinned Bi 2Se 3. Proc Natl Acad Sci U S A 2024; 121:e2307425121. [PMID: 38271339 PMCID: PMC10835140 DOI: 10.1073/pnas.2307425121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Accepted: 11/29/2023] [Indexed: 01/27/2024] Open
Abstract
We present evidence of a strong circular photon drag effect (PDE) in topological insulators (TIs) through the observation of helicity-dependent topological photocurrents with threefold rotational symmetry using THz spectroscopy in epitaxially-grown Bi2Se3 with reduced crystallographic twinning. We establish how twinned domains introduce competing nonlinear optical (NLO) responses inherent to the crystal structure that obscure geometry-sensitive optical processes through the introduction of a spurious mirror symmetry. Minimizing the twinning defect reveals strong NLO response currents whose magnitude and direction depend on the alignment of the excitation to the crystal axes and follow the threefold rotational symmetry of the crystal. Notably, photocurrents arising from helical light reverse direction for left/right circular polarizations and maintain a strong azimuthal dependence-a result uniquely attributable to the circular PDE, where the photon momentum acts as an applied in-plane field stationary in the laboratory frame. Our results demonstrate new levels of control over the magnitude and direction of photocurrents in TIs and that the study of single-domain films is crucial to reveal hidden phenomena that couple topological order and crystal symmetries.
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Affiliation(s)
- Blair C. Connelly
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
| | - Patrick J. Taylor
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
| | - George J. de Coster
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
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Jiang X, Kang L, Wang J, Huang B. Giant Bulk Electrophotovoltaic Effect in Heteronodal-Line Systems. PHYSICAL REVIEW LETTERS 2023; 130:256902. [PMID: 37418709 DOI: 10.1103/physrevlett.130.256902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Revised: 04/27/2023] [Accepted: 05/30/2023] [Indexed: 07/09/2023]
Abstract
The realization of a giant and continuously tunable second-order photocurrent is desired for many nonlinear optical (NLO) and optoelectronic applications, which remains a great challenge. Here, based on a two-band model, we propose a concept of the bulk electrophotovoltaic effect, that is, an out-of-plane external electric field (E_{ext}) that can continuously tune in-plane shift current along with its sign flip in a heteronodal-line (HNL) system. While strong linear optical transition around the nodal loop may potentially generate giant shift current, an E_{ext} can effectively control the radius of the nodal loop, which can continuously modulate the shift-vector components inside and outside the nodal loop holding opposite signs. This concept has been demonstrated in the HNL HSnN/MoS_{2} system using first-principles calculations. The HSnN/MoS_{2} heterobilayer can not only produce a shift-current conductivity with magnitude that is one to two orders larger than other reported systems, but it can also realize a giant bulk electrophotovoltaic effect. Our finding opens new routes to create and manipulate NLO responses in 2D materials.
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Affiliation(s)
- Xiao Jiang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Lei Kang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
- Beijing Normal University, Beijing 100875, China
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6
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Cheng L, Xiong Y, Kang L, Gao Y, Chang Q, Chen M, Qi J, Yang H, Liu Z, Song JC, Chia EE. Giant photon momentum locked THz emission in a centrosymmetric Dirac semimetal. SCIENCE ADVANCES 2023; 9:eadd7856. [PMID: 36598995 PMCID: PMC9812375 DOI: 10.1126/sciadv.add7856] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Accepted: 11/28/2022] [Indexed: 06/17/2023]
Abstract
Strong second-order optical nonlinearities often require broken material centrosymmetry, thereby limiting the type and quality of materials used for nonlinear optical devices. Here, we report a giant and highly tunable terahertz (THz) emission from thin polycrystalline films of the centrosymmetric Dirac semimetal PtSe2. Our PtSe2 THz emission is turned on at oblique incidence and locked to the photon momentum of the incident pump beam. Notably, we find an emitted THz efficiency that is giant: It is two orders of magnitude larger than the standard THz-generating nonlinear crystal ZnTe and has values approaching that of the noncentrosymmetric topological material TaAs. Further, PtSe2 THz emission displays THz sign and amplitude that is controlled by the incident pump polarization and helicity state even as optical absorption is only weakly polarization dependent and helicity independent. Our work demonstrates how photon drag can activate pronounced optical nonlinearities that are available even in centrosymmetric Dirac materials.
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Affiliation(s)
- Liang Cheng
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ying Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Lixing Kang
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Yu Gao
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Mengji Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Jingbo Qi
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Justin C.W. Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Elbert E. M. Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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Bhalla P, Das K, Culcer D, Agarwal A. Resonant Second-Harmonic Generation as a Probe of Quantum Geometry. PHYSICAL REVIEW LETTERS 2022; 129:227401. [PMID: 36493457 DOI: 10.1103/physrevlett.129.227401] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Revised: 03/06/2022] [Accepted: 10/14/2022] [Indexed: 06/17/2023]
Abstract
Nonlinear responses are actively studied as probes of topology and band geometric properties of solids. Here, we show that second harmonic generation serves as a probe of the Berry curvature, quantum metric, and quantum geometric connection. We generalize the theory of second harmonic generation to include Fermi surface effects in metallic systems, and finite scattering timescale. In doped materials the Fermi surface and Fermi sea cause all second harmonic terms to exhibit resonances, and we identify two novel contributions to the second harmonic signal: a double resonance due to the Fermi surface and a higher-order pole due to the Fermi sea. We discuss experimental observation in the monolayer of time reversal symmetric Weyl semimetal WTe_{2} and the parity-time reversal symmetric topological antiferromagnet CuMnAs.
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Affiliation(s)
- Pankaj Bhalla
- Department of Physics, School of Engineering and Sciences, SRM University AP, Amaravati, 522240, India
- Beijing Computational Science Research Center, Beijing 100193, China
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, The University of New South Wales, Sydney 2052, Australia
| | - Kamal Das
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
| | - Dimitrie Culcer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, The University of New South Wales, Sydney 2052, Australia
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
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Gao Y, Pei Y, Xiang T, Cheng L, Qi J. Terahertz wave emission from the trigonal layered PtBi 2. iScience 2022; 25:104511. [PMID: 35720263 PMCID: PMC9204749 DOI: 10.1016/j.isci.2022.104511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Revised: 05/02/2022] [Accepted: 05/27/2022] [Indexed: 11/16/2022] Open
Abstract
In this work, broadband terahertz (THz) wave emissions have been detected from the trigonal layered PtBi2 on the excitation of the femtosecond laser pulses. Such THz generation is found to arise from the dominated linear photogalvanic effect, which is further discovered to strongly depend on the unique electronic structures of PtBi2. Furthermore, an effective nonlinear susceptibility of PtBi2 is also obtained and is nearly two orders of magnitude larger than that of the traditional nonlinear crystal for THz generation. Terahertz (THz) wave emission, topological semimetal, ultrafast photocurrent
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Affiliation(s)
- Yu Gao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yunhe Pei
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Tian Xiang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Liang Cheng
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jingbo Qi
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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